WO2001009926A1 - Improved ladder boat for supporting wafers - Google Patents
Improved ladder boat for supporting wafers Download PDFInfo
- Publication number
- WO2001009926A1 WO2001009926A1 PCT/EP2000/007042 EP0007042W WO0109926A1 WO 2001009926 A1 WO2001009926 A1 WO 2001009926A1 EP 0007042 W EP0007042 W EP 0007042W WO 0109926 A1 WO0109926 A1 WO 0109926A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- dividers
- ladder boat
- support rods
- boat
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
Definitions
- the present invention relates to the manufacture of semiconductor integrated circuits (ICs) and more particularly to an improved ladder boat which supports the semiconductor wafers for processing.
- wafers Processing of semiconductor wafers (hereinafter called “wafers”) includes a number of heat treatments at elevated temperatures to diffuse dopants, to deposit oxide layers and so on.
- Vertical furnaces are extensively used to date for conducting heat treatments during so-called “hot” processes which include low pressure chemical vertical deposition
- a vertical heat treatment furnace includes a ladder boat to hold the wafers that are disposed horizontally and spaced from another in the vertical direction. The wafers can be automatically loaded and unloaded in and out of the heat treatment furnace by the transfer fork of a robot.
- FIG. 1 is comprised of FIGS. 1A and IB which schematically show the top view and the cross-sectional view (taken along line AA of FIG. 1A) of a conventional ladder boat referenced 10 currently used in standard LPCVD furnaces. It is important to point out that the illustrations are not necessarily drawn to scale.
- the ladder boat 10 comprises a top plate 11 and a bottom plate 11B (not shown) vertically opposing each other, six rectangular-shaped support rods 12 (the number can vary between four and six) provided between the top and bottom plates. Grooves or slots are formed at equal distance in the support rods by a grinding machine as standard that define lodgments to receive the silicon wafers 14.
- dividers referenced 13 protrusions commonly referred to as dividers referenced 13 are created and they will support the silicon wafers 14 at their peripheral surface.
- dividers 13 have the general shape of squared teeth (although rounded teeth are also commonly used in the semiconductor industry) .
- Plates 11 and support rods 12 are typically made of solar glass and quartz ware respectively. Wafers 14 are separated in the vertical direction by a distance (labeled P in FIG. 1) referred to as the "pitch" in the technical literature.
- the capacity of such a conventional ladder boat is of 160 wafers with a pitch P of about .14 inch for a VTR 7000+ reactor (SVG-THERMCO, San Jose, CA, USA) or 170 wafers with a pitch of .2 inch for a TEL ALPHA8 reactor (Tokyo Electron Limited, Tokyo, Japan).
- the contact zone between a wafer 14 and each of the dividers 13 supporting it is a surface referenced S in FIG. 1, substantially a square in the present case.
- the value of contact surface S is about 6 mm2.
- the ladder boat 10 is provided with six support rods 12, the total contact surface which is equal to 6xS (i.e. 36 mm2 ) can be relatively important. Because monocrystalline silicon (the base material of semiconductor wafers) has a melting point of 1410 °C, crystalline defects tend to take place in vicinities of parts of the silicon wafers 14 supported by the support rods 12 at contact surface S locations during standard heat treatments that are conducted at 1000 °C and above.
- each contact surface S generates a cold zone on the wafer active surface which creates a substantial degradation of the thickness uniformity and contamination, of the deposited layer.
- LPCVD reactors include a vacuum system
- the microscratches and chipping particles generation phenomena is increased by the vibrations caused by the pump.
- different ladder boat designs have been proposed so far.
- the so-called "ring boat” wherein the wafers are not supported by dividers in grooves of the support rods, rings instead are supported in the grooves and wafers held directly thereon.
- the peripheral edges of the wafers contact the rings and internal stresses are mitigated, reducing thereby the occurrence of microscratches.
- ring boats are difficult to fabricate and rather expensive.
- the contact surface is too important because it is equal to the whole ring surface. All these drawbacks are also valid for thermal oxidation and anneal steps that are performed at the atmospheric pressure, except the vibrations because no vacuum system is used in this case .
- microscratches and chipping particles at the wafer backside is also critical later on in the wafer manufacturing process, because it generates defocused chip images during different photolithography steps (mainly at the deep trench and gate conductor formation) that are subsequently performed.
- the roughness of the wafer backside surface is locally so modified that it becomes impossible to keep all the wafer in the focus plan of the photolithography tool during its exposition to UV light creating thereby photolithography defects necessitating a rework step as it will be discussed in more details later on.
- Such a reworking operation substantially increases the wafer processing costs.
- the mechanical contact between the wafer and the dividers of the ladder boat creates said microscratches and chipping particles at wafer backside during wafer loading and unloading operations because the poor handling system accuracy to load wafers in narrow slots (standard wafer pitch is .14 inch). Therefore, the solution to the problem raised by microscratches and chipping particles, if any, can only come from an innovative design of the ladder boat .
- an improved ladder boat for supporting a plurality of semiconductor wafers for thermal treatments comprising: a. top and bottom plates vertically opposing each other and parallel in a horizontal direction; b. a plurality of support rods affixed to said top and bottom plates to define an internal volume therebetween and which are provided with dividers to support said wafers, wherein said wafer dividers are profiled to have a ramp portion so that the wafer is seated on a sharp corner thereof.
- the contact surface between the wafer backside at its periphery and the dividers is segmental or punctual .
- FIG. 1 is comprised of FIGS. 1A and IB which respectively show a top view and a cross sectional view of a conventional ladder boat .
- FIG. 2 schematically shows a top view of the electrostatic chuck (the part of the wafer handling system of the photolithography tool) of a Micrascan III.
- FIG. 3 schematically shows a top view of the electrostatic chuck of a Nikon NSR-2205U2.
- FIG. 4 is comprised of FIGS. 4A and 4B which respectively show a top view and a cross sectional view of the improved ladder boat of the present invention.
- FIG. 5 shows a cross-section of a saw blade having a particular profile that can be used to machine the support rods according to the present invention.
- Applicant's inventors have observed the quality of the backside of a large a number of wafers after being processed in the LPCVD furnaces of the wafer manufacturing line with the conventional ladder boat of FIG. 1. This observation was performed by a beam of oblique light as standard. They have first discovered that microscratches and chipping particles are always found at the contact surface S locations and at the close periphery thereof, as a result of the mechanical friction mentioned above. However, they have surprisingly noticed that they were not reproducible batch to batch. 1 Q
- Applicant's inventors have correlated this non-uniformity with the particular structure of the chuck of the photolithography tool .
- FIGS. 2 and 3 illustrate two different chuck designs of commercially available photolithography tools.
- the chuck 15 of the Micrascan III a tool sold by SVG Lithography Systems, Wilton, CT, USA is characterized by the presence of an external ring 16 that is provided with four extensions 17 and three central pads 18.
- Ring 16 width dl is equal to 2mm at the ring circumference except at the four extension locations where the total width d2 is equal to 5 mm.
- the chuck 19 shown in FIG. 3 is a part of the Nikon NSR-2205H2, a photolithography tool sold by Nikon Corp., Tokyo, Japan has a different structure. It is comprised of a plurality of annular rings 20, ... having a width of 2 mm and of three central pads 21 disposed according to an equilateral triangle .
- the wafer thus seats down on at least one ring (16 or 20, ... ) and on a few central pads (18 or 21) depending the chuck (15 or 19) in consideration.
- Applicants inventors have remarked that the areas of the silicon wafer that are common to both said contact surface S locations and said rings are the exact zones where they found the maximum of microscratches and chipping particles .
- FIG. 4 The improved ladder boat of the present invention illustrated in FIG. 4 is comprised of FIGS. 4A and 4B which respectively show a top view and a cross sectional view thereof.
- FIGS. 4A and 4B Like reference numerals (with prime) are now used in this drawing to designate identical (corresponding) parts.
- the main originality of the improved ladder boat now referenced 10' is to ensure that the contact between the wafer backside and a divider is limited to a segmental or punctual surface S' having a significantly lower value than the corresponding contact surface S.
- the new divider now referenced 13 ' includes a ramp portion so that a silicon wafer 14 is seated at a sharp corner thereof to minimize said contact surface S'.
- This particular shape can be obtained by forming slots in support rods 12' using a standard grinding machine but with a tilted saw blade and moving the rod step by step until all the slots are formed and then assembling the support rods 12' with the top and bottom plates ll'A and ll'B to fabricate the improved ladder boat 10'.
- the improved ladder boat can be fabricated another way.
- the top and bottom plates are assembled with support rods
- Normal slots are first produced in the support rods using a standard grinding machine that is mounted inside the internal volume defined by the plates and the support rods. Then, using a set of saw blades having a special profile, such as the saw blade 21 shown in FIG. 5, the grooves are simultaneously machined again. The saw blades are inserted at the bottom of the slots and then moved downwards while still rotating to create the ramp portion mentioned above with the desired angle. As apparent in FIGS. 4 and 5, the angle defining the saw blade profile determines the ramp portion profile .
- the length of the divider 13 ' is equal to 12 mm and the angle of the ramp with the horizontal direction is about 3°.
- the value of this angle which depends of the pitch P' must be greater than zero and preferably greater than 2°.
- S' is equal to 1 mm2.
- support rods 12 ' now limited to three which suffice to define a plane to support the wafer. As apparent in FIG. 4, these three support rods 12 ' preferably have a circular section and thus are glass cylinders (other shapes derived from this cylindrical shape can be envisioned as well) . Support rods can be placed as shown in FIG. 4. This reduced number of support rods in turn not only reduces the contact surface but also the detrimental influence of the vibrations produced during LPCVD steps.
- Two additional rods 22 can be secured to the top and bottom plates to improve the overall ladder boat rigidity. These two additional rods can reveal to be worthwhile during either high temperature treatments or during LPCVD steps because in this case they allow to reduce the contact surface S'.
- the contact surface is two fold reduced. It first is minimized to substantially a segmental or a punctual surface (represented by S') and by the reduction of the number of supports rods to only three instead of six in the conventional ladder boat 10 of FIG. 1.
- the total contact surface is now represented by 3xS', i.e. 3 mm2 (to be compared with 36 mm2 ) .
- This contact surface reduction is an essential aspect in the attempt to reduce the number of microscratches and chipping particles and the cold zones at the active face of the wafer to improve deposited layer thickness uniformity.
- ladder boat 10' this segmental or punctual contact is preferably performed outside the contact area between the wafer backside and the photolithography chuck. In other words, whenever possible any mechanical contact between the zones of the wafer that have been in contact with the dividers during the thermal steps and the zones of the chuck supporting the wafer during photolithography steps should be avoided.
- the rework rate (percentage of reworked wafers) is given below in TABLE II for the same products as listed in TABLE I. Note that in this case, the wafer cleaning process mentioned above has not been performed because it is no longer necessary. The backside wafer is clean enough to be directly processed in the photolithography tool without causing any contamination to the chuck.
- the improved ladder boat 10' finds extensive applications in the silicon wafer manufacturing, in particular for the deposition of the thin Si02 or Si3N4 pad and capping layers. Other designs of the improved ladder boat 10' can be envisioned as far as they respect the general rules stated above. It will be apparent to those skilled in the art that various modifications in the design of the dividers and of the ladder boat described above by reference to FIG. 4 may be made without departing from the spirit or scope of the present invention as expressed in the following claims.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001514459A JP2003506864A (en) | 1999-07-29 | 2000-07-21 | Improved rudder boat supporting wafers |
EP00956255A EP1214731A1 (en) | 1999-07-29 | 2000-07-21 | Improved ladder boat for supporting wafers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99480068.8 | 1999-07-29 | ||
EP99480068 | 1999-07-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001009926A1 true WO2001009926A1 (en) | 2001-02-08 |
Family
ID=8242456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2000/007042 WO2001009926A1 (en) | 1999-07-29 | 2000-07-21 | Improved ladder boat for supporting wafers |
Country Status (7)
Country | Link |
---|---|
US (1) | US6361313B1 (en) |
EP (1) | EP1214731A1 (en) |
JP (1) | JP2003506864A (en) |
KR (1) | KR100490451B1 (en) |
CN (1) | CN1173384C (en) |
TW (1) | TWI250604B (en) |
WO (1) | WO2001009926A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3916765A1 (en) | 2020-05-29 | 2021-12-01 | Commissariat à l'énergie atomique et aux énergies alternatives | Device for holding wafers, especially silicon wafers |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6455395B1 (en) * | 2000-06-30 | 2002-09-24 | Integrated Materials, Inc. | Method of fabricating silicon structures including fixtures for supporting wafers |
US6835039B2 (en) * | 2002-03-15 | 2004-12-28 | Asm International N.V. | Method and apparatus for batch processing of wafers in a furnace |
US6582221B1 (en) * | 2002-07-19 | 2003-06-24 | Asm International N.V. | Wafer boat and method for treatment of substrates |
US7256375B2 (en) * | 2002-08-30 | 2007-08-14 | Asm International N.V. | Susceptor plate for high temperature heat treatment |
US7033126B2 (en) * | 2003-04-02 | 2006-04-25 | Asm International N.V. | Method and apparatus for loading a batch of wafers into a wafer boat |
WO2005004967A2 (en) * | 2003-07-02 | 2005-01-20 | Cook Incorporated | Small gauge needle catheterization apparatus |
US7181132B2 (en) | 2003-08-20 | 2007-02-20 | Asm International N.V. | Method and system for loading substrate supports into a substrate holder |
US7245357B2 (en) * | 2003-12-15 | 2007-07-17 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060027171A1 (en) * | 2004-08-06 | 2006-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer boat for reducing wafer warpage |
US20060065634A1 (en) * | 2004-09-17 | 2006-03-30 | Van Den Berg Jannes R | Low temperature susceptor cleaning |
US20060060145A1 (en) * | 2004-09-17 | 2006-03-23 | Van Den Berg Jannes R | Susceptor with surface roughness for high temperature substrate processing |
US20060150906A1 (en) * | 2005-01-07 | 2006-07-13 | Selen Louis J M | Wafer boat for reduced shadow marks |
US7241141B2 (en) * | 2005-09-19 | 2007-07-10 | Texas Instruments Incorporated | Low contact SiC boat for silicon nitride stress reduction |
JP5205738B2 (en) * | 2006-10-16 | 2013-06-05 | 株式会社Sumco | Silicon wafer support method, heat treatment jig and heat treatment wafer |
US20090071918A1 (en) * | 2007-09-18 | 2009-03-19 | Panchapakesan Ramanarayanan | Vertical semiconductor wafer carrier |
CN105895517A (en) * | 2008-10-07 | 2016-08-24 | 应用材料公司 | Apparatus for efficient removal of halogen residues from etched substrates |
CN101556931B (en) * | 2009-05-19 | 2012-09-19 | 上海宏力半导体制造有限公司 | Wafer cassette |
TWI541928B (en) * | 2011-10-14 | 2016-07-11 | 晶元光電股份有限公司 | Wafer carrier |
US9153466B2 (en) * | 2012-04-26 | 2015-10-06 | Asm Ip Holding B.V. | Wafer boat |
FR2995394B1 (en) | 2012-09-10 | 2021-03-12 | Soitec Silicon On Insulator | SUPPORT DEVICE FOR A PLURALITY OF SUBSTRATES FOR A VERTICAL OVEN |
JP6104695B2 (en) * | 2013-04-30 | 2017-03-29 | ミライアル株式会社 | Asymmetric groove-shaped wafer cassette |
CN103280418B (en) * | 2013-05-07 | 2016-04-13 | 上海华力微电子有限公司 | High-temperature oxidization equipment |
CN104658956A (en) * | 2013-11-18 | 2015-05-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Support structure for wafer transfer system |
CN103824796B (en) * | 2014-01-07 | 2017-04-12 | 苏州新纳晶光电有限公司 | Graphite bearing disc for LED epitaxial process, and matching substrate thereof |
US9829806B2 (en) | 2014-03-14 | 2017-11-28 | Taiwan Semiconductor Manufacturing Company Limited | Lithography tool with backside polisher |
US20170110353A1 (en) * | 2015-10-20 | 2017-04-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer boat, annealing tool and annealing method |
US10072892B2 (en) | 2015-10-26 | 2018-09-11 | Globalwafers Co., Ltd. | Semiconductor wafer support ring for heat treatment |
WO2017138185A1 (en) * | 2016-02-10 | 2017-08-17 | 株式会社日立国際電気 | Substrate treatment apparatus, substrate holding tool, and placing tool |
JP7009194B2 (en) * | 2017-12-12 | 2022-01-25 | 株式会社ディスコ | Wafer generator and transport tray |
JP7164396B2 (en) * | 2018-10-29 | 2022-11-01 | 株式会社ディスコ | wafer generator |
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US5534074A (en) * | 1995-05-17 | 1996-07-09 | Heraeus Amersil, Inc. | Vertical boat for holding semiconductor wafers |
US5584401A (en) * | 1994-07-29 | 1996-12-17 | Yodogawa Kasei Kabushiki Kaisha | Substrate-supporting side boards and a cassette utilizing the boards |
US5586880A (en) * | 1993-01-27 | 1996-12-24 | Tokyo Electron Limited | Heat treatment apparatus and heat treatment boat |
US5752609A (en) * | 1996-02-06 | 1998-05-19 | Tokyo Electron Limited | Wafer boat |
EP0884769A1 (en) * | 1996-02-29 | 1998-12-16 | Tokyo Electron Limited | Heat-treating boat for semiconductor wafer |
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USRE26345E (en) * | 1968-02-20 | Tile setter | ||
US4504224A (en) * | 1980-05-22 | 1985-03-12 | Hewitt David K | Kiln furniture |
KR20000002833A (en) * | 1998-06-23 | 2000-01-15 | 윤종용 | Semiconductor wafer boat |
-
2000
- 2000-06-07 TW TW089111051A patent/TWI250604B/en not_active IP Right Cessation
- 2000-07-21 WO PCT/EP2000/007042 patent/WO2001009926A1/en not_active Application Discontinuation
- 2000-07-21 JP JP2001514459A patent/JP2003506864A/en active Pending
- 2000-07-21 EP EP00956255A patent/EP1214731A1/en not_active Ceased
- 2000-07-21 KR KR10-2002-7000926A patent/KR100490451B1/en not_active IP Right Cessation
- 2000-07-21 CN CNB008110085A patent/CN1173384C/en not_active Expired - Fee Related
- 2000-07-28 US US09/628,863 patent/US6361313B1/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US5586880A (en) * | 1993-01-27 | 1996-12-24 | Tokyo Electron Limited | Heat treatment apparatus and heat treatment boat |
US5584401A (en) * | 1994-07-29 | 1996-12-17 | Yodogawa Kasei Kabushiki Kaisha | Substrate-supporting side boards and a cassette utilizing the boards |
US5534074A (en) * | 1995-05-17 | 1996-07-09 | Heraeus Amersil, Inc. | Vertical boat for holding semiconductor wafers |
US5752609A (en) * | 1996-02-06 | 1998-05-19 | Tokyo Electron Limited | Wafer boat |
EP0884769A1 (en) * | 1996-02-29 | 1998-12-16 | Tokyo Electron Limited | Heat-treating boat for semiconductor wafer |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3916765A1 (en) | 2020-05-29 | 2021-12-01 | Commissariat à l'énergie atomique et aux énergies alternatives | Device for holding wafers, especially silicon wafers |
FR3111012A1 (en) * | 2020-05-29 | 2021-12-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Device for maintaining wafers, in particular silicon wafers |
Also Published As
Publication number | Publication date |
---|---|
CN1365512A (en) | 2002-08-21 |
CN1173384C (en) | 2004-10-27 |
JP2003506864A (en) | 2003-02-18 |
US6361313B1 (en) | 2002-03-26 |
TWI250604B (en) | 2006-03-01 |
KR20020022087A (en) | 2002-03-23 |
EP1214731A1 (en) | 2002-06-19 |
KR100490451B1 (en) | 2005-05-19 |
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