WO2001028048A3 - Energy control for an excimer or molecular fluorine laser - Google Patents

Energy control for an excimer or molecular fluorine laser Download PDF

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Publication number
WO2001028048A3
WO2001028048A3 PCT/IB2000/001657 IB0001657W WO0128048A3 WO 2001028048 A3 WO2001028048 A3 WO 2001028048A3 IB 0001657 W IB0001657 W IB 0001657W WO 0128048 A3 WO0128048 A3 WO 0128048A3
Authority
WO
WIPO (PCT)
Prior art keywords
burst
values
pulses
break
subsequent
Prior art date
Application number
PCT/IB2000/001657
Other languages
French (fr)
Other versions
WO2001028048A2 (en
Inventor
Ulrich Rebhan
Gunter Nowinsky
Original Assignee
Lambda Physik Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/418,052 external-priority patent/US6243406B1/en
Priority claimed from US09/447,882 external-priority patent/US6490307B1/en
Priority claimed from US09/484,818 external-priority patent/US6243405B1/en
Application filed by Lambda Physik Ag filed Critical Lambda Physik Ag
Priority to JP2001530160A priority Critical patent/JP2003511865A/en
Priority to DE10083396T priority patent/DE10083396T1/en
Publication of WO2001028048A2 publication Critical patent/WO2001028048A2/en
Publication of WO2001028048A3 publication Critical patent/WO2001028048A3/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/134—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation in gas lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/038—Electrodes, e.g. special shape, configuration or composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2258—F2, i.e. molecular fluoride is comprised for lasing around 157 nm

Abstract

A method and gas replenishment algorithm for excimer and molecular fluorine lasers is based on parameters upon which gas aging more closely depends than pulse count, such as input energy to the electrical discharge, and also preferably time. A burst control method and algorithm includes measuring the energies of initial pulses of a first burst occurring after a long burst break, calculating values of input voltages for the initial pulses that would bring output energies of the individual laser pulses or groups of pulses to substantially the same values, and applying the calculated voltages in a subsequent first burst after a long burst break to achieve substantially same predetermined output energy values for the pulses or groups of pulses. Similar operations may be performed for one or more subsequent bursts following the first burst. The values for the first burst may be maintained in a first table of input voltage values to be read by a processor which signals a power supply circuit to apply the voltages according to the voltage values in the table. The values for subsequent bursts may be maintained in a second table, and a third table, etc. A final table such as the third table may be used for all subsequent bursts until another long burst break again occurs, after which the first table is again used for the first burst following the long burst break.
PCT/IB2000/001657 1999-10-14 2000-10-13 Energy control for an excimer or molecular fluorine laser WO2001028048A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001530160A JP2003511865A (en) 1999-10-14 2000-10-13 Energy control of excimer or molecular fluorine laser
DE10083396T DE10083396T1 (en) 1999-10-14 2000-10-13 Energy control for an excimer or molecular fluorine laser

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US09/418,052 1999-10-14
US09/418,052 US6243406B1 (en) 1999-03-12 1999-10-14 Gas performance control system for gas discharge lasers
US15952599P 1999-10-15 1999-10-15
US60/159,525 1999-10-15
US09/447,882 1999-11-23
US09/447,882 US6490307B1 (en) 1999-03-17 1999-11-23 Method and procedure to automatically stabilize excimer laser output parameters
US17171799P 1999-12-22 1999-12-22
US60/171,717 1999-12-22
US09/484,818 2000-01-18
US09/484,818 US6243405B1 (en) 1999-03-17 2000-01-18 Very stable excimer or molecular fluorine laser

Publications (2)

Publication Number Publication Date
WO2001028048A2 WO2001028048A2 (en) 2001-04-19
WO2001028048A3 true WO2001028048A3 (en) 2001-11-22

Family

ID=27538593

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2000/001657 WO2001028048A2 (en) 1999-10-14 2000-10-13 Energy control for an excimer or molecular fluorine laser

Country Status (3)

Country Link
JP (1) JP2003511865A (en)
DE (1) DE10083396T1 (en)
WO (1) WO2001028048A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10244105B3 (en) * 2002-02-26 2004-09-16 Xtreme Technologies Gmbh Process for energy stabilization of gas discharge pumped radiation sources operated in defined pulse sequences
US6914920B2 (en) 2002-02-26 2005-07-05 Xtreme Technologies Gmbh Method for energy stabilization of gas discharged pumped in selected impulse following driven beam sources
KR100545294B1 (en) 2002-05-10 2006-01-24 에이에스엠엘 네델란즈 비.브이. Lithographic Apparatus, Device Manufacturing Method, Performance Measuring Method, Calibration Method and Computer Program
EP1361479B1 (en) * 2002-05-10 2006-03-15 ASML Netherlands B.V. Control of a lithographic apparatus
US7852889B2 (en) * 2006-02-17 2010-12-14 Cymer, Inc. Active spectral control of DUV light source
CN108886228B (en) 2016-05-09 2021-03-19 极光先进雷射株式会社 Laser device
WO2021178091A1 (en) 2020-03-03 2021-09-10 Cymer, Llc Control system for a light source
CN115347447A (en) * 2022-08-23 2022-11-15 西北核技术研究所 Method and device for stably outputting pulse laser energy by adopting voltage regulation and control

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5097291A (en) * 1991-04-22 1992-03-17 Nikon Corporation Energy amount control device
US5450436A (en) * 1992-11-20 1995-09-12 Kabushiki Kaisha Komatsu Seisakusho Laser gas replenishing apparatus and method in excimer laser system
US5887014A (en) * 1997-08-20 1999-03-23 Cymer, Inc. Process for selecting operating range for narrow band excimer laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5097291A (en) * 1991-04-22 1992-03-17 Nikon Corporation Energy amount control device
US5450436A (en) * 1992-11-20 1995-09-12 Kabushiki Kaisha Komatsu Seisakusho Laser gas replenishing apparatus and method in excimer laser system
US5887014A (en) * 1997-08-20 1999-03-23 Cymer, Inc. Process for selecting operating range for narrow band excimer laser

Also Published As

Publication number Publication date
WO2001028048A2 (en) 2001-04-19
DE10083396T1 (en) 2002-01-24
JP2003511865A (en) 2003-03-25

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