WO2001029565A1 - Beschleunigungssensor mit eingeschränkter beweglichkeit in vertikaler richtung - Google Patents
Beschleunigungssensor mit eingeschränkter beweglichkeit in vertikaler richtung Download PDFInfo
- Publication number
- WO2001029565A1 WO2001029565A1 PCT/DE2000/002913 DE0002913W WO0129565A1 WO 2001029565 A1 WO2001029565 A1 WO 2001029565A1 DE 0002913 W DE0002913 W DE 0002913W WO 0129565 A1 WO0129565 A1 WO 0129565A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- acceleration sensor
- stop
- oscillating
- oscillating structure
- acceleration
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0051—For defining the movement, i.e. structures that guide or limit the movement of an element
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5642—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
Definitions
- the invention relates to an acceleration sensor with the features mentioned in the preamble of claim 1.
- Acceleration sensors of the generic type are known. These have an oscillating structure that is movably suspended on a substrate as a seismic mass. As a result of an acceleration, this seismic mass is deflected and changes its relative position to the substrate. Evaluation means are assigned to the seismic mass, which record the degree of the deflection caused by acceleration. Piezoresistive, capacitive or frequency-analog evaluation arrangements are known as evaluation means. In the capacitive evaluation means, the seismic mass is provided with a comb structure which interacts with a fixed comb structure, that is to say connected to the substrate. Capacities are formed between the individual webs of the comb structures, the sizes of which change with a deflection of the seismic mass. These capacitance changes can be detected via evaluation circuits and an acceleration acting on the acceleration sensor can thus be detected.
- an oscillation plane of the oscillation structure within which the acceleration-related deflection takes place lies in a substrate plane. It is known to assign laterally acting stops to the vibrating structure, which are intended to prevent the comb structure connected to the vibrating structure from striking the fixed comb structure connected to the substrate. This avoids mechanical destruction of the comb structures.
- acceleration sensors it is disadvantageous that an acceleration acting essentially perpendicular to the vibration plane can result in the vibration structure being deflected out of the vibration plane. With a correspondingly large acceleration that acts essentially perpendicular to the vibration plane, the vibration structure can jump out of the existing lateral guide structures, so that a function of the acceleration sensor is impaired or excluded. Since such acceleration sensors are used, for example, in safety-relevant equipment in motor vehicles, for example to trigger airbags, belt tensioners or the like, a malfunction is associated with a considerable safety risk. Advantages of the invention
- the acceleration sensor according to the invention with the features mentioned in claim 1 has the advantage over the fact that the functionality of the acceleration sensor is not impaired due to acceleration forces acting essentially perpendicular to the vibration plane.
- stop means are provided which limit a deflection movement of the oscillating structure which is essentially perpendicular to the oscillating plane of the oscillating structure advantageously means that when accelerating forces which cannot be detected and which are essentially perpendicular to the oscillating plane are attacked, the oscillating structure does not can jump out of their lateral guide structures.
- sling means thus form additional, vertical
- the vertically acting stop means are arranged below the oscillating structure. This ensures that these stop means are integrated in the acceleration sensor, so that an additional overall height is not necessary.
- the stop means are non-positively connected to the oscillating structure, an element which is non-positively connected to the substrate forming a counter-stop. This makes integration of the lifting means in the sensor element special simply possible. It is further preferred if the element forming the counterstop is an evaluation electrode of the evaluation means connected to the substrate. This advantageously makes it possible to maintain a known and proven layout of the acceleration sensor, so that the outlay for producing the acceleration sensors having the additional vertically acting lifting means does not substantially increase.
- FIG. 1 shows a schematic top view of an acceleration sensor in a first exemplary embodiment
- FIG. 7 shows a schematic top view of the acceleration sensor with integrated vertical stop means
- Figure 8 is a schematic enlarged detail of the arrangement of vertical lifting means in a further embodiment
- FIG. 9 Figures the arrangement of vertical slings on 9 and 10 an acceleration sensor in a further embodiment.
- the design of an acceleration sensor 10 is shown in a top view in FIG.
- the acceleration sensor 10 is structured on a substrate, not shown in detail, for example an afer.
- the structuring can be carried out using known methods of surface micromechanics.
- the wafer is formed from the paper plane.
- the wafer can have electrical evaluation circuits for the acceleration sensor 10 which are not to be considered in detail here.
- the acceleration sensor 10 has a vibrating structure 12 which is designed as a seismic mass.
- the vibrating structure 12 is suspended so that it can move relative to the substrate (wafer).
- the oscillating structure 12 is coupled to spring elements 14, which are connected to the substrate via fastening points 16.
- These attachment points 16 carry the entire arrangement of the oscillating structure 12 and the spring elements 1, which is otherwise suspended freely above the substrate. This can be done using known Steps in the production of surface micro-mechanical structures take place, the free-swinging areas being under-etched, so that there is a slight gap between the substrate and the vibrating structure 12 or the spring elements 14.
- the oscillating structure 12 has a comb structure 18 on both sides, which is formed by fingers 20 arranged perpendicular to the surface of the substrate.
- the comb structures 18 are rigid, so that when the oscillating structure 12 moves, they vibrate rigidly with the oscillating structure 12.
- the acceleration sensor 10 also has evaluation means 22 which are formed by fixed comb structures. These include electrodes 24 and electrodes 26, which originate from the substrate (wafer) and are arranged between the fingers 20 of the oscillating structure 12. Capacities C1 are formed between the electrodes 24 and the fingers 20 and capacitances C2 are formed between the electrodes 26 and the fingers 20. For this purpose, the electrodes 24 and 26 and the oscillating structure 12 are connected to an evaluation circuit, not shown, via the fastening points 16. The capacitances C1 and C2 are determined by a distance between the fingers 20 and the electrodes 24 and 26, respectively. Since the entire material of the acceleration sensor 10 consists of an electrically conductive material, for example silicon, the capacitances C1 and C2 can enter the substrate and thus be integrated into the evaluation circuit, not shown in detail.
- the oscillating structure 12 has recesses 28, in each of which a lateral stop 30 connected to the substrate (wafer) engages.
- the acceleration sensor 10 shows the following function which is known per se.
- an x, y and z axis is entered in a coordinate system.
- the x and y axes define the vibration level of the vibration structure 12, which coincides with the paper level as shown in FIG. 1.
- the z-axis runs perpendicular to the vibration plane.
- the acceleration sensors 10 are placed in such a way that an attacking acceleration acting in the y direction can be detected. If such an acceleration acts on the acceleration sensor 10, the oscillating structure 12 is deflected in the y direction.
- the associated change in the capacitances C1 and C2 can be used to determine a voltage variable which is proportional to the accelerating acceleration and which is available for further evaluations.
- FIGS. 2 to 6 each show a sectional view through the acceleration sensor 10 during individual method steps for producing the acceleration sensor 10.
- the acceleration sensor 10 is only shown in sections in the area of the later recesses 28 of the oscillating structures 12.
- the x, y and z axes are again entered for orientation.
- the individual method steps for structuring the acceleration sensor 10 are known per se, so that they are not dealt with in detail.
- an insulation layer 34 is produced on an output wafer 32.
- This insulation layer 34 can be, for example, a thermal silicon oxide SiO 2 or a boron-phosphorus-silicate glass.
- the layer thickness of the insulation layer 34 is, for example, between 0.5 ⁇ m and 3 ⁇ m.
- a conductor track layer 36 ' is deposited on the insulation layer 34, for example by means of a CVD (chemical vapor deposition) process.
- the conductor track layer 36 ' has, for example, a layer thickness between 0.3 ⁇ m and 2 ⁇ m.
- a sacrificial layer 38 is then applied.
- the sacrificial layer 38 is for example made of silicon oxide SiO 2 or boron-phosphorus-silicate glass.
- Trench-shaped openings 40 are first introduced into this sacrificial layer 38, so that a central region 42 and outer regions 44 are formed. The trench-shaped openings 40 extend to the conductor track layer 36 '.
- a further functional layer 46 is deposited, which has a thickness of between 2 ⁇ m and 20 ⁇ m, for example. Due to the previous structuring of the trench-shaped openings 40, the functional layer 46 is also deposited into the trench-shaped openings 40, so that contact is made with the conductor track layer 36 '.
- a further masking layer 48 is deposited on the functional layer 46. In accordance with the later design of the acceleration sensor 10, trench-shaped depressions 50 are introduced into this masking layer 48, which define regions 52 and regions 54 of the masking layer 48.
- the areas 52 cover the functional layer 46 in later movably arranged structures of the acceleration sensor 10, while the areas 54 cover portions of the functional layer 46 which define later fixed areas of the acceleration sensor 10 connected to the substrate.
- the functional layer 46 is selectively anisotropically etched through the trench-shaped openings 50 - as illustrated in FIG. 5.
- the masking layer 48 is removed in a subsequent process step.
- the selective anisotropic etching the trenches 50 ' automatically stop at the sacrificial layer 38.
- the etching of the trenches 50' defines the later recess 28 of the acceleration sensor 10, which is arranged within the oscillating mass 12 and into which the later lateral stop 30 engages.
- Figure 6 illustrates that in a next step, the sacrificial layer 38 and the isolation layer 34 are selectively removed (etched), so that a gap 52 results between the oscillating structure 12 and the output wafer 32, which leads to the oscillation structure 12 over the output wafer 32 (substrate) is movably suspended (via the spring elements 14 according to FIG. 1). Due to the selective etching of the sacrificial layer 38 and the insulation layer 34, the conductor track layer 36 'remains, which is non-positively connected to the oscillating structure 12 via connecting elements 54.
- the connecting elements 54 correspond to the filling of the functional layer 46 into the trench-shaped openings 40 (FIG. 4).
- the section 56 of the lateral stop 30 shown in the sectional representations in FIGS. 2 to 6 is under-etched, so that a gap 58 with a gap width w results between the conductor track layer 36 'and section 56.
- the gap width w results from the thickness of the sacrificial layer 38.
- the stop means 36 is underneath the likewise free placed section 56 of the lateral stop 30 arranged. It thus follows that lateral stop 30 on the one hand limits deflection of the oscillating structure 12 in the x or y direction in accordance with the arrangement of the recess 28. Furthermore, the deflection of the oscillating structure 12 in the z direction is limited at the same time by the section 56 of the lateral stop 30. The maximum deflection of the oscillating structure 12 in the z direction results from the gap width w of the gap 58. This prevents the oscillating structure 12 from jumping out of its oscillating plane (sensing plane) due to the occurrence of an acceleration force and thus the function of the Acceleration sensor 10 is impaired or no longer exists.
- FIG. 7 illustrates in an enlarged detail the area of the oscillating structure 12 in which the lateral stop 30 and the stop means (vertical stop) 36 are formed.
- the detailed enlargement of the oscillating structure 12 shown in FIG. 7 in the region of the recess 28 relates to at least one of the recesses 28, can, however, also preferably be formed on both recesses 28 of the oscillating structure 12 (FIG. 1).
- an acceleration sensor 10 is shown again in a top view, a further possibility of forming the vertical stop being shown.
- the conductor track layer 36 ' is fastened directly to the oscillating structure 12 via the connecting elements 54, it can be provided that the conductor track layer 36' is also structured below two adjacent fingers 20 of the oscillating structure 12.
- the conductor track layer 36 ' engages in regions under the electrodes 24 and 26, which are positively connected to the output wafer 32 (substrate).
- the counter-stop for the conductor track layer 36 ' is thus formed by the electrodes 24 and 26, respectively.
- the arrangement of the conductor track layer 36 ′ and thus the stop means 36 can be carried out on opposite fingers 20 of the oscillating structure 12.
- FIGS. 9 and 10 show a further embodiment variant for forming the ones acting in the z direction
- FIG. 9 shows a schematic top view of the oscillating structure 12 in the region of a recess 28.
- the lateral stop 30 engages in the recess 28.
- this lateral stop 30 has an annular step 60 running in the direction of the starting wafer (substrate) 32.
- the conductor track layer 36 ' is now applied to the insulating layer 34 (FIG. 2) in such a way that it surrounds it in a ring shape the lateral stop 30 runs, the conductor track layer 36 'partially protruding into the area of the ring step 60.
- the lateral stop 30 is non-positively connected to the output wafer 32 via an oxide bridge 62.
- Such a configuration also ensures that, on the one hand, the lateral stop 30 engages in the recess 28 to limit the movement of the oscillating structure 12 in the x and y directions. Due to the annular encirclement of the conductor track layer 36 'of the lateral stop 30 and partial protrusion into the ring step 60, there is the gap 58 with the gap width w relative to the lateral stop 30. This limits the mobility of the oscillating structure 12 in the z direction.
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001532106A JP2003512627A (ja) | 1999-10-15 | 2000-08-25 | 加速度センサ |
KR1020027004745A KR20020039371A (ko) | 1999-10-15 | 2000-08-25 | 수직 방향으로의 이동이 제한된 가속도 센서 |
EP00969205A EP1242826B1 (de) | 1999-10-15 | 2000-08-25 | Beschleunigungssensor mit eingeschränkter beweglichkeit in vertikaler richtung |
US10/110,618 US6634232B1 (en) | 1999-10-15 | 2000-08-25 | Acceleration sensor with limited movability in the vertical direction |
DE50009944T DE50009944D1 (de) | 1999-10-15 | 2000-08-25 | Beschleunigungssensor mit eingeschränkter beweglichkeit in vertikaler richtung |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19949605.6 | 1999-10-15 | ||
DE19949605A DE19949605A1 (de) | 1999-10-15 | 1999-10-15 | Beschleunigungssensor |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001029565A1 true WO2001029565A1 (de) | 2001-04-26 |
Family
ID=7925672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2000/002913 WO2001029565A1 (de) | 1999-10-15 | 2000-08-25 | Beschleunigungssensor mit eingeschränkter beweglichkeit in vertikaler richtung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6634232B1 (de) |
EP (1) | EP1242826B1 (de) |
JP (1) | JP2003512627A (de) |
KR (1) | KR20020039371A (de) |
DE (2) | DE19949605A1 (de) |
WO (1) | WO2001029565A1 (de) |
Cited By (4)
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US10199682B2 (en) | 2011-06-29 | 2019-02-05 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US10658705B2 (en) | 2018-03-07 | 2020-05-19 | Space Charge, LLC | Thin-film solid-state energy storage devices |
US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
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AU2001250957A1 (en) * | 2000-03-24 | 2001-10-08 | Cymbet Corporation | Integrated capacitor-like battery and associated method |
CN1244141C (zh) * | 2001-07-26 | 2006-03-01 | 三菱电机株式会社 | 薄膜结构体及其制造方法 |
US6906436B2 (en) * | 2003-01-02 | 2005-06-14 | Cymbet Corporation | Solid state activity-activated battery device and method |
JP2004286624A (ja) * | 2003-03-24 | 2004-10-14 | Denso Corp | 半導体力学量センサ |
WO2006046193A1 (en) * | 2004-10-27 | 2006-05-04 | Koninklijke Philips Electronics N. V. | Electronic device |
FR2880128B1 (fr) * | 2004-12-29 | 2007-02-02 | Commissariat Energie Atomique | Accelerometre micro-usine a peignes capacitifs |
US7776478B2 (en) | 2005-07-15 | 2010-08-17 | Cymbet Corporation | Thin-film batteries with polymer and LiPON electrolyte layers and method |
EP1911118B1 (de) | 2005-07-15 | 2014-03-05 | Cymbet Corporation | Dünnfilmbatterien mit weichen und harten elektrolytschichten |
WO2008012846A1 (en) * | 2006-07-26 | 2008-01-31 | Stmicroelectronics S.R.L. | Planar microelectromechanical device having a stopper structure for out-of-plane movements |
DE102006058747A1 (de) * | 2006-12-12 | 2008-06-19 | Robert Bosch Gmbh | Mikromechanischer z-Sensor |
DE102007050116B4 (de) * | 2007-10-19 | 2023-08-03 | Robert Bosch Gmbh | Beschleunigungssensor |
DE102007051871A1 (de) * | 2007-10-30 | 2009-05-07 | Robert Bosch Gmbh | Mikromechanisches Bauelement und Verfahren zum Betrieb eines mikromechanischen Bauelements |
DE102008002606B4 (de) * | 2008-06-24 | 2020-03-12 | Robert Bosch Gmbh | Mikromechanischer Beschleunigungssensor mit offener seismischer Masse |
DE102009000429B4 (de) * | 2009-01-27 | 2021-01-28 | Robert Bosch Gmbh | Mikromechanische Vorrichtung und Herstellungsverfahren hierfür |
JP2010249805A (ja) * | 2009-03-26 | 2010-11-04 | Seiko Epson Corp | Memsセンサー、memsセンサーの製造方法、および電子機器 |
DE102009029095B4 (de) * | 2009-09-02 | 2017-05-18 | Robert Bosch Gmbh | Mikromechanisches Bauelement |
JP2011174881A (ja) * | 2010-02-25 | 2011-09-08 | Asahi Kasei Electronics Co Ltd | 静電容量型加速度センサ |
US8596123B2 (en) * | 2011-05-05 | 2013-12-03 | Freescale Semiconductor, Inc. | MEMS device with impacting structure for enhanced resistance to stiction |
DE102012201480B4 (de) * | 2012-02-02 | 2020-08-20 | Robert Bosch Gmbh | Mikromechanisches Bauelement und Verfahren zu dessen Herstellung |
JP5999302B2 (ja) * | 2012-02-09 | 2016-09-28 | セイコーエプソン株式会社 | 電子デバイスおよびその製造方法、並びに電子機器 |
JP6206651B2 (ja) | 2013-07-17 | 2017-10-04 | セイコーエプソン株式会社 | 機能素子、電子機器、および移動体 |
JP6124752B2 (ja) * | 2013-09-27 | 2017-05-10 | 三菱電機株式会社 | マイクロデバイスの製造方法 |
JP2016042074A (ja) * | 2014-08-13 | 2016-03-31 | セイコーエプソン株式会社 | 物理量センサー、電子機器および移動体 |
US9638712B2 (en) * | 2015-01-22 | 2017-05-02 | Nxp Usa, Inc. | MEMS device with over-travel stop structure and method of fabrication |
US20170023606A1 (en) * | 2015-07-23 | 2017-01-26 | Freescale Semiconductor, Inc. | Mems device with flexible travel stops and method of fabrication |
DE102020205616A1 (de) | 2020-05-04 | 2021-11-04 | Robert Bosch Gesellschaft mit beschränkter Haftung | Mikromechanische Sensoranordnung, Verfahren zur Verwendung einer mikromechanischen Sensoranordnung |
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-
1999
- 1999-10-15 DE DE19949605A patent/DE19949605A1/de not_active Withdrawn
-
2000
- 2000-08-25 KR KR1020027004745A patent/KR20020039371A/ko not_active Application Discontinuation
- 2000-08-25 JP JP2001532106A patent/JP2003512627A/ja active Pending
- 2000-08-25 EP EP00969205A patent/EP1242826B1/de not_active Expired - Lifetime
- 2000-08-25 US US10/110,618 patent/US6634232B1/en not_active Expired - Lifetime
- 2000-08-25 DE DE50009944T patent/DE50009944D1/de not_active Expired - Lifetime
- 2000-08-25 WO PCT/DE2000/002913 patent/WO2001029565A1/de active IP Right Grant
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US5121633A (en) * | 1987-12-18 | 1992-06-16 | Nissan Motor Co., Ltd. | Semiconductor accelerometer |
DE3920645A1 (de) * | 1989-06-23 | 1991-01-10 | Fraunhofer Ges Forschung | Vorrichtung zur messung mechanischer kraefte und kraftwirkungen |
EP0766089A2 (de) * | 1995-09-28 | 1997-04-02 | Siemens Aktiengesellschaft | Mikroelektronischer, integrierter Sensor und Verfahren zur Herstellung des Sensors |
DE19830476A1 (de) * | 1997-07-30 | 1999-02-04 | Motorola Inc | Halbleitervorrichtung und entsprechendes Herstellungsverfahren |
WO1999012002A2 (en) * | 1997-09-02 | 1999-03-11 | Analog Devices, Inc. | Micromachined gyros |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10199682B2 (en) | 2011-06-29 | 2019-02-05 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
US10658705B2 (en) | 2018-03-07 | 2020-05-19 | Space Charge, LLC | Thin-film solid-state energy storage devices |
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Publication number | Publication date |
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EP1242826B1 (de) | 2005-03-30 |
JP2003512627A (ja) | 2003-04-02 |
EP1242826A1 (de) | 2002-09-25 |
US6634232B1 (en) | 2003-10-21 |
DE50009944D1 (de) | 2005-05-04 |
KR20020039371A (ko) | 2002-05-25 |
DE19949605A1 (de) | 2001-04-19 |
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