WO2001031388A1 - Method and apparatus for optically modulating an optical beam with a multi-pass wave-guided optical modulator - Google Patents
Method and apparatus for optically modulating an optical beam with a multi-pass wave-guided optical modulator Download PDFInfo
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- WO2001031388A1 WO2001031388A1 PCT/US2000/041269 US0041269W WO0131388A1 WO 2001031388 A1 WO2001031388 A1 WO 2001031388A1 US 0041269 W US0041269 W US 0041269W WO 0131388 A1 WO0131388 A1 WO 0131388A1
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- WIPO (PCT)
- Prior art keywords
- optical beam
- semiconductor substrate
- deflector
- charged region
- optical
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
Definitions
- the present invention relates generally to integrated circuits and, more specifically, the present invention relates to the modulation of light using integrated circuits. Background Information
- the second typical prior art approach is based on using silicon based optical waveguides. These waveguides are generally built using Silicon-on- Insulator (SOI) based processing techniques.
- SOI Silicon-on- Insulator
- Prior art SOI based modulators utilize silicon waveguide structures to switch light passing through the optical waveguide.
- the switching mechanism however utilizes injection of carriers into the waveguide rather like in a bipolar based transistor.
- One consequence of this is slow speed, for example up to several hundred megahertz, and very high power consumption, for example 10 mW or more for a single switch.
- In order to increase the modulation depth one often tries to obtain a large interaction volume between the injected charge and the optical beam.
- an optical modulator includes a charged region disposed in a semiconductor substrate of an integrated circuit die.
- a first deflector is disposed proximate to the charged region.
- the first deflector is to deflect an optical beam directed through the charged region back through the charged region.
- a second deflector is disposed opposite the first deflector.
- the second deflector to deflect the optical beam deflected away from the first deflector back through the charged region to the first deflector.
- the optical beam is to be directed away from the optical modulator after a plurality of deflections of the optical beam through the charged region between the first and second deflectors.
- Figure 1 is an illustration of a cross section of one embodiment of a flip chip packaged integrated circuit die including an optical modulator using a p-n junction charged region and total internal reflection to modulate an optical beam in accordance with the teachings of the present invention.
- Figure 2 is an illustration of a cross section of another embodiment of a flip chip packaged integrated circuit die including an optical modulator using a p- n junction charged region and reflective materials to modulate an optical beam in accordance with the teachings of the present invention.
- Figure 3 is an illustration of a cross section of yet another embodiment of a flip chip packaged integrated circuit die including an optical modulator using a metal-oxide-semiconductor (MOS) type structure charged region and total internal reflection to modulate an optical beam in accordance with the teachings of the present invention.
- MOS metal-oxide-semiconductor
- Figure 4 is an illustration of a cross section of another embodiment of a flip chip packaged integrated circuit die including an optical modulator using a MOS type structure charged region and reflective materials to modulate an optical beam in accordance with the teachings of the present invention.
- the present invention provides an optical modulator that enables integrated circuit signals to be extracted from integrated circuit output circuit nodes through the back side of the semiconductor substrate of a integrated circuit die.
- an optical modulator is disposed within a flip chip packaged integrated circuit die.
- an optical beam is directed through the back side of a semiconductor substrate of an integrated circuit die.
- the optical beam is directed through a charged region in the semiconductor substrate.
- the charge distribution of free charge carriers in charged region is modulated in response to an electrical signal originating from, for example, an output node of a circuit in the integrated circuit die.
- circuitry of the integrated circuit die is located towards the front side of the integrated circuit die.
- the optical beam is deflected off a first deflector back through the charged region.
- a second deflector deflects the optical beam that was deflected off the first deflector back through the charged region back to the first deflector. After a plurality of deflections of the optical beam through the charged region between the first and second deflectors, the optical beam is deflected out through the back side of the semiconductor substrate of the integrated circuit die.
- FIG. 1 shows one embodiment of an integrated circuit die 101 including an optical modulator in accordance with the teachings of the present invention.
- integrated circuit die 101 is a controlled collapse chip connection (C4) or flip chip packaged integrated circuit die coupled to package substrate 109 through ball bonds 107.
- C4 controlled collapse chip connection
- ball bonds 107 provide more direct connections between the internal integrated circuit nodes of integrated circuit die 101 and the pins 121 of package substrate 109, thereby reducing inductance problems associated with typical wire bond integrated circuit packaging technologies.
- the internal integrated circuit nodes of integrated circuit die 101 are located towards the front side 104 of integrated circuit die 101. Another characteristic of flip chip packaging is that full access to the back side 102 of integrated circuit die 101 is provided.
- the optical modulator of the present invention includes modulation region disposed within the semiconductor substrate 103 including a charged region 115.
- charged region 115 is provided using a p-n junction formed with doped region 113 in semiconductor substrate 103.
- doped region 113 is electrically addressable and switchable.
- doped region 1 13 is an n-type doped silicon region in a p-type silicon semiconductor substrate 103. In another embodiment, doped region 1 13 is a p-type doped silicon region in an n-type silicon substrate 103.
- the present invention covers the types of devices described herein as well as devices including dopants of opposite polarities. For instance, the present invention covers both n-channel and p-channel device structures. Moreover, for purposes of this disclosure, it is appreciated that the term "substrate” covers layers of the semiconductor substrate including for example well regions, epitaxy layers, or the like. Therefore, a p-n junction of the present invention may exist, for example, in the semiconductor substrate, an n well in a p substrate, a p well in an n substrate, an n epitaxy layer, a p epitaxy layer, etc., in accordance with the teachings of the present invention
- the free charge distribution in charged region 115 is modulated in response to signal 129, which is carried by conductor 119 in insulating layer 105 to doped region 113.
- signal 129 is a signal generated by an output node of an integrated circuit included within integrated circuit die 101.
- V of signal 129 is varied on conductor 119, the free charge carrier distribution in charged region 115 is modulated.
- a "charged" region may be interpreted as a highly charged region having free charge carriers.
- an optical beam 111 is directed through back side 102 into semiconductor substrate 103. As shown in the embodiment depicted in Figure 1, optical beam 111 is directed through charged region 115 and is deflected off a deflector formed by the interface of doped region 1 13 and insulator 105. In one embodiment, optical beam 1 11 has an angle of incidence ⁇ relative to the interface between doped region 113 and insulator 105. For purposes of this disclosure, an incident angle ⁇ is the angle that an optical beam makes with an imaginary line perpendicular to a surface at the point of incidence. In the embodiment depicted in Figure 1, optical beam 111 is deflected off the interface between doped region 113 and insulator 105 because of total internal reflection. In one embodiment, the process in which the doped region 113 is formed is such that there is no suicide formed at the reflecting surface at the interface between doped region 113 and insulator 105.
- the incident angle ⁇ of optical beam 111 relative to the interface between doped region 113 and insulator 105 satisfies the following relationship: sin ⁇ > n m n Si (Equation 1)
- optical beam 111 is in one embodiment deflected back through charged region 115 until it is deflected off the interface at the back side 102 of semiconductor substrate 103 and air.
- the incident angle ⁇ of deflected optical beam 111 relative to the interface between semiconductor substrate 103 and air satisfies the following relationship: sin ⁇ > n a Jn St (Equation 2) where the index of refraction of air n ⁇ r is approximately equal to 1.
- a deflector is formed at the interface between semiconductor substrate 103 and air. This deflector is opposite the deflector formed at the interface between doped region 113 and insulator 105.
- optical beam 111 is deflected through charged region 113 a plurality of times until it finally exits through the back side 102 of semiconductor substrate 103 as deflected optical beam 127.
- optical beam 111 includes infrared or near infrared light as silicon is partially transparent to infrared light.
- optical beam 111 enters through the back side 102 of semiconductor substrate 103 at location 123 and deflected optical beam 127 exits through the back side 102 of semiconductor substrate at location 125.
- the surfaces at locations 123 and 125 include anti-reflective coatings to reduce attenuation of optical beam 111 and reflected optical beam 127 due to reflections. As illustrated in the embodiment shown in Figure 1, the surface of location 123 is angled such that the incident angle ⁇ of optical beam 111 is reduced. Similarly, the surface of
- location 125 in one embodiment is angled such that the incident angle ⁇ of deflected optical beam 127 is reduced.
- optical beam 111 is nearly perpendicular relative to location 123 and deflected optical beam 127 is nearly perpendicular to location 125.
- a larger incident angle ⁇ on the primary reflector e.g. the deflector formed at the interface between doped region 113 and insulator 105 in Figure 1 can be attained.
- semiconductor substrate 103 is thinned in the region proximate to charged region 115 such that the amount of semiconductor substrate 103 through which optical beam 111 passes is reduced.
- semiconductor substrate 103 is thinned from back side 102 using known etching or trenching techniques or the like.
- optical beam 111 is modulated in response to signal 129 due to the modulation of free carrier distribution in charged region 115.
- the phase of optical beam 111 passing through charged region 115 is modulated due to the plasma optical effect.
- the plasma optical effect arises due to an interaction between the optical electric field vector and free charge carriers that may be present along the propagation path of the optical beam 111.
- the electric field of the optical beam 111 polarizes the free charge carriers and this effectively perturbs the local dielectric constant of the medium. This in turn leads to a perturbation of the propagation velocity of the optical wave and hence the refractive index for the light, since the refractive index is simply the ratio of the speed of the light in vacuum to that in the medium.
- the free charge carriers also lead to absorption of the optical field as optical energy is used up, to accelerate the free charge carriers.
- the refractive index perturbation is a complex number with the real part being that part which causes the velocity change and the imaginary part being related to the free charge carrier absorption.
- the amount of phase shift ⁇ is given by
- n 0 is the nominal index of refraction for silicon
- e is the electronic charge
- integrated circuit die 103 forms a multipass wave guided optical modulator.
- the total interaction length L of the optical modulator form using charged region 115 is increased in accordance with the teachings of present invention due to the multiple deflections or passes of optical beam 111 through charged region 115.
- the modulation depth of the optical modulator form with charged region 1 15 is increased relative to an optical modulator having a charged region through which the optical beam passes through only twice.
- optical beam 111 and/or deflected optical beam 127 are directed into and out from semiconductor substrate 103 using diffractive optics (not shown) or the like.
- Optical beam 111 and/or deflected optical beam 127 may be directed into and out from the diffractive optics using optical fiber techniques or the like.
- FIG 2 is an illustration of a cross section of another embodiment of a flip chip packaged integrated circuit die 201 including an optical modulator using a p-n junction charged region and reflective materials to modulate an optical beam 211 in accordance with the teachings of the present invention.
- integrated circuit die 201 is illustrated in a flip chip configuration and is coupled to package substrate 209 through ball bonds 207 to provide more direct connections between the internal integrated circuit nodes of integrated circuit die 201 and the pins 221 of package substrate 209.
- the internal integrated circuit nodes of integrated circuit die 201 are located towards the front side 204 of integrated circuit die 201. It is appreciated that in other embodiment, integrated circuit die 201 is not limited to being mounted in a flip chip packaged configuration in accordance with the teachings of the present invention.
- the optical modulator in integrated circuit die 201 of Figure 2 includes a modulation region disposed within the semiconductor substrate 203 including a charged region 215.
- charged region 215 is provided using a p-n junction formed with doped region 213 in semiconductor substrate 203.
- doped region 213 is electrically addressable and switchable.
- doped region 213 is an n-type doped silicon region in a p-type silicon semiconductor substrate 203.
- doped region 213 is a p-type doped silicon region in an n-type silicon substrate 203.
- the free charge distribution in charged region 215 is modulated in response to signal 229, which is carried by conductor 219 in insulating layer 205 to doped region 213.
- signal 229 is a signal generated by an output node of an integrated circuit included within integrated circuit die 201.
- an optical beam 211 is directed through back side 202 into semiconductor substrate 203.
- the process in which the doped region 213 is formed is such that there is no reflective material, such as for example suicide, formed at the surface at the interface between doped region 213 and insulator 205.
- optical beam 211 is directed through charged region 215 and insulator 205 and is deflected off a deflector formed by conductor 219.
- conductor 219 is formed with a reflective material, such as for example metal or the like.
- optical beam 211 is in one embodiment deflected back through charged region 215 until it is deflected off deflector 233, which is disposed opposite conductor 219 on the back side 202 of semiconductor substrate 203.
- deflector 233 is formed with a reflective material, such as for example metal or the like.
- optical beam 211 is deflected through charged region 213 a plurality of times until it finally exits through the back side 202 of semiconductor substrate 203 as deflected optical beam 227.
- optical beam 211 includes infrared or near infrared light as silicon is partially transparent to infrared light.
- optical beam 211 enters through the back side 202 of semiconductor substrate 203 at location 223 and deflected optical beam 227 exits through the back side 202 of semiconductor substrate at location 225.
- the surfaces at locations 223 and 225 as well as the surface under deflector 233 include anti- reflective coatings to reduce attenuation of optical beam 211 and reflected optical beam 227 due to reflections.
- the surface of location 223 is angled such that the incident angle ⁇ of optical beam 211 is reduced.
- the surface of location 225 in one embodiment is angled such that the incident angle ⁇ of deflected optical beam 227 is reduced.
- optical beam 211 is nearly perpendicular relative to location 223 and deflected optical beam 227 is nearly perpendicular to location 225.
- optical beam 211 and/or deflected optical beam 227 are directed into and out from semiconductor substrate 203 using diffractive optics (not shown) or the like.
- Optical beam 211 and/or deflected optical beam 227 may be directed into and out from the diffractive optics using optical fiber techniques or the like.
- total internal reflection does not occur at the interface between doped region 213 and insulator 205 because of the relatively small angle of incidence ⁇ of optical beam 211. Therefore, optical beam 211 in the embodiment illustrated in Figure 2 is a directed at the interface between doped region 213 and insulator 205 at a steeper angle compared to the embodiment illustrated in Figure 1.
- An advantage with the embodiment illustrated in Figure 2 is that there is no minimum angle of incidence ⁇ for optical beam 211 integrated circuit die 201 can therefore be designed with a smaller lateral dimension allowing the same or greater number of deflections of optical beam 211 through charged region 215.
- semiconductor substrate 203 is thinned in the region proximate to charged region 215 such that the amount of semiconductor substrate 203 through which optical beam 211 passes is reduced.
- the distance between the deflector formed with conductor 219 and deflector 233 is reduced.
- semiconductor substrate 203 is thinned from back side 202 using known etching or trenching techniques or the like.
- Figure 3 is an illustration of a cross section of yet another embodiment of a flip chip packaged integrated circuit die 301 including an optical modulator using a metal-oxide-semiconductor (MOS) type structure charged region and total internal reflection to modulate an optical beam 311 in accordance with the teachings of the present invention.
- MOS metal-oxide-semiconductor
- the present invention is not limited to the use of an actual metal for MOS type structures.
- a polysilicon gate or the like may be used instead of a metal gate in accordance with the teachings of the present invention.
- the optical modulator in integrated circuit die 301 illustrated in Figure 3 is similar to the optical modulator in integrated circuit die 101 illustrated in Figure 1 with the exception of charged region 315 in integrated circuit die 301 being formed using a MOS structure instead of a p-n junction structure.
- integrated circuit die 301 of Figure 3 is illustrated in a flip chip configuration and is coupled to package substrate 309 through ball bonds 307 to provide more direct connections between the internal integrated circuit nodes of integrated circuit die 301 and the pins 321 of package substrate 309.
- the internal integrated circuit nodes of integrated circuit die 301 are located towards the front side 304 of integrated circuit die 301. It is appreciated that in other embodiment, integrated circuit die 301 is not limited to being mounted in a flip chip packaged configuration.
- the optical modulator in integrated circuit die 301 of Figure 3 includes modulation region disposed within the semiconductor substrate 303 including a charged region 315.
- charged region 315 is formed using integrated circuit devices such as transistors coupled as metal oxide semiconductor field effect transistor (MOSFET) capacitors with source and drain regions shorted together.
- MOSFET metal oxide semiconductor field effect transistor
- Figure 3 shows source/drain regions 335 and 337 disposed in the semiconductor substrate 303. Source/drain regions 335 and 337 are shorted together through conductor 343.
- a polysilicon gate 341 is disposed in insulator 305 between source/drain regions 335 and 337. As shown, a gate insulator 339 is disposed between semiconductor substrate 303 and gate 341.
- the source/drain regions 335 and 337 are commonly coupled through conductor 343 to a common potential V, such as for example ground for n channel MOSFETs or V cc for p channel MOSFETs.
- potential V is V cc for n channel MOSFETs and ground for p channel MOSFETs.
- source and drain are coupled to different potentials.
- gate 341 is electrically addressable and switchable. In one embodiment gate 341 is coupled to receive signal 329 through conductor 319.
- a highly charged inversion layer is formed in charged region 315, which is disposed between the source/drain regions 335 and 337 in semiconductor substrate 303.
- the free charge carrier distribution in charged region 315 is modulated in response to signal 329.
- signal 329 is a signal generated by an output node of an integrated circuit included within integrated circuit die 301.
- source/drain regions 335 and 337 include N + doped regions disposed in a P-type semiconductor substrate 103.
- source/drain regions 335 and 337 include P+ doped regions disposed in an N-type semiconductor substrate 103.
- capacitor structures are utilized instead of MOS transistor structures as the non-mobile inversion layer in the MOSFET capacitor channel is used to modulate the optical beam 311.
- optical beam 311 is directed through back side 302 into semiconductor substrate 303. As shown, optical beam 311 is directed through charged region 315 and is deflected off a deflector formed by the interface of semiconductor substrate 303 and gate insulator 339. In one embodiment, optical beam 311 has an angle of incidence ⁇ relative to the interface between semiconductor substrate 303 and gate insulator 339 such that optical beam 311 is deflected off the interface between semiconductor substrate 303 and gate insulator 339 because of total internal reflection.
- optical beam 311 is in one embodiment deflected back through charged region 315 until it is deflected off the interface at the back side 302 of semiconductor substrate 303 and air.
- the incident angle ⁇ of deflected optical beam 311 is such that it is deflected off back side 302 at the interface between semiconductor substrate 303 and air because of total internal reflection.
- a deflector is formed at the interface between semiconductor substrate 303 and air. This deflector is opposite the deflector formed at the interface between semiconductor substrate 303 and gate insulator 339.
- optical beam 311 is deflected back through charged region 315 a plurality of times until it finally exits through the back side 302 of semiconductor substrate 303 as deflected optical beam 327.
- optical beam 31 1 includes infrared or near infrared light as silicon is partially transparent to infrared light.
- optical beam 311 enters through the back side 302 of semiconductor substrate 303 at location 323 and deflected optical beam 327 exits through the back side 302 of semiconductor substrate at location 325.
- the surfaces at locations 323 and 325 include anti-reflective coatings to reduce attenuation of optical beam 311 and reflected optical beam 327 due to reflections. As illustrated in the embodiment shown in Figure 3, the surface of location 323 is angled such that the incident angle ⁇ of optical beam 311 is reduced. Similarly, the surface of
- location 325 in one embodiment is angled such that the incident angle ⁇ of deflected optical beam 327 is reduced.
- optical beam 311 is nearly perpendicular relative to location 323 and deflected optical beam 327 is nearly perpendicular to location 325.
- semiconductor substrate 303 is thinned in the region proximate to charged region 315 such that the amount of semiconductor substrate 303 through which optical beam 311 passes is reduced.
- semiconductor substrate 303 is thinned from back side 302 using known etching or trenching techniques or the like.
- optical beam 31 1 and/or deflected optical beam 327 are directed into and out from semiconductor substrate 303 using diffractive optics (not shown) or the like.
- Optical beam 311 and/or deflected optical beam 327 may be directed into and out from the diffractive optics using optical fiber techniques or the like.
- FIG 4 is an illustration of a cross section of another embodiment of a flip chip packaged integrated circuit die 401 including an optical modulator using a MOS type structure charged region and reflective materials to modulate an optical beam 401 in accordance with the teachings of the present invention.
- integrated circuit die 401 of Figure 4 is illustrated in a flip chip configuration and is coupled to package substrate 409 through ball bonds 407 to provide more direct connections between the internal integrated circuit nodes of integrated circuit die 401 and the pins 421 of package substrate 409.
- the internal integrated circuit nodes of integrated circuit die 401 are located towards the front side 404 of integrated circuit die 401. It is appreciated that in other embodiment, integrated circuit die 401 is not limited to being mounted in a flip chip packaged configuration in accordance with the teachings of the present invention.
- the optical modulator in integrated circuit die 401 of Figure 4 includes modulation region disposed within the semiconductor substrate 403 including a charged region 415.
- charged region 415 is provided using a MOSFET capacitor or capacitor structure.
- Figure 4 shows a MOSFET capacitor including source/drain regions 435 and 437 disposed in the semiconductor substrate 403, which are shorted together through conductor 443.
- the source/drain regions 435 and 437 are commonly coupled through conductor 343 to a common potential V.
- a polysilicon gate 441 is disposed in insulator 405 between source/drain regions 435 and 437.
- a gate insulator 439 is disposed between semiconductor substrate 403 and gate 441.
- gate 441 is electrically addressable and switchable.
- gate 441 is coupled to receive signal 429 through conductor 419.
- Operation of the optical modulator in integrated circuit die 401 is similar to the operation of the optical modulator in integrated circuit die 301.
- a highly charged inversion layer is formed in charged region 415, which is disposed between the source/drain regions 435 and 437 in semiconductor substrate 403.
- the free charge carrier distribution in charged region 415 is modulated in response to signal 429.
- signal 429 is a signal generated by an output node of an integrated circuit included within integrated circuit die 401.
- optical beam 411 is directed through back side 402 into semiconductor substrate 403.
- optical beam 411 is directed through charged region 415, through gate insulator 439, through polysilicon gate 441 and is deflected off a deflector formed by conductor 419.
- conductor 419 is formed with a reflective material, such as for example metal or the like.
- optical beam 411 is in one embodiment deflected back through charged region 415 until it is deflected off deflector 433, which is disposed opposite of conductor 419 on the back side 402 of semiconductor substrate 403.
- deflector 433 is formed with a reflective material, such as for example metal or the like.
- optical beam 411 is deflected through charged region 413 a plurality of times until it finally exits through the back side 402 of semiconductor substrate 403 as deflected optical beam 427.
- optical beam 411 includes infrared or near infrared light as silicon is partially transparent to infrared light.
- optical beam 411 enters through the back side 402 of semiconductor substrate 403 at location 423 and deflected optical beam 427 exits through the back side 402 of semiconductor substrate at location 425.
- the surfaces at locations 423 and 425 as well as the surface under deflector 433 include anti- reflective coatings to reduce attenuation of optical beam 411 and reflected optical beam 427 due to reflections. As illustrated in the embodiment shown in Figure 4, the surface of location 423 is angled such that the incident angle ⁇ of optical beam 411 is reduced.
- the surface of location 425 in one embodiment is angled such that the incident angle ⁇ of deflected optical beam 427 is reduced.
- optical beam 411 is nearly perpendicular relative to location 423 and deflected optical beam 427 is nearly perpendicular to location 425.
- semiconductor substrate 403 is thinned in the region proximate to charged region 415 such that the amount of semiconductor substrate 403 through which optical beam 41 1 passes is reduced.
- the distance between the deflector formed with conductor 419 and deflector 433 is reduced.
- semiconductor substrate 403 is thinned from back side 402 using known etching or trenching techniques or the like.
- optical beam 411 and/or deflected optical beam 427 are directed into and out from semiconductor substrate 403 using diffractive optics (not shown) or the like.
- Optical beam 411 and/or deflected optical beam 427 may be directed into and out from the diffractive optics using optical fiber techniques or the like.
- total internal reflection does not occur at the interface between semiconductor substrate 403 and insulator gate insulator 439 because of the relatively small angle of incidence ⁇ of optical beam 411.
Abstract
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Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002389067A CA2389067C (en) | 1999-10-25 | 2000-10-18 | Method and apparatus for optically modulating an optical beam with a multi-pass wave-guided optical modulator |
IL14913100A IL149131A (en) | 1999-10-25 | 2000-10-18 | Method and apparatus for optically modulating an optical beam with a multi-pass wave-guided optical modulator |
EP00982702A EP1244935A1 (en) | 1999-10-25 | 2000-10-18 | Method and apparatus for optically modulating an optical beam with a multi-pass wave-guided optical modulator |
AU19696/01A AU1969601A (en) | 1999-10-25 | 2000-10-18 | Method and apparatus for optically modulating an optical beam with a multi-pass wave-guided optical modulator |
JP2001533466A JP4617045B2 (en) | 1999-10-25 | 2000-10-18 | Method and apparatus for optically modulating a light beam using a multipath guided light modulator |
HK02108390.7A HK1046958A1 (en) | 1999-10-25 | 2002-11-20 | Method and apparatus for optically modulating an optical beam with a multi-pass wave-guided optical modulator |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US09/435,058 US6215577B1 (en) | 1999-10-25 | 1999-10-25 | Method and apparatus for optically modulating an optical beam with a multi-pass wave-guided optical modulator |
US09/435,058 | 1999-10-25 |
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WO2001031388A1 true WO2001031388A1 (en) | 2001-05-03 |
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PCT/US2000/041269 WO2001031388A1 (en) | 1999-10-25 | 2000-10-18 | Method and apparatus for optically modulating an optical beam with a multi-pass wave-guided optical modulator |
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US (1) | US6215577B1 (en) |
EP (1) | EP1244935A1 (en) |
JP (1) | JP4617045B2 (en) |
KR (1) | KR100479228B1 (en) |
CN (1) | CN1208659C (en) |
AU (1) | AU1969601A (en) |
CA (1) | CA2389067C (en) |
HK (1) | HK1046958A1 (en) |
IL (1) | IL149131A (en) |
TW (1) | TW475301B (en) |
WO (1) | WO2001031388A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006504145A (en) * | 2002-10-25 | 2006-02-02 | インテル・コーポレーション | Light beam modulation method and apparatus having ring resonator with charge modulation region |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6480641B1 (en) * | 1997-12-19 | 2002-11-12 | Intel Corporation | Method and apparatus for optically modulating light through the back side of an integrated circuit die along the side walls of junctions |
US6602427B1 (en) * | 2000-08-28 | 2003-08-05 | Xiang Zheng Tu | Micromachined optical mechanical modulator based transmitter/receiver module |
US6608945B2 (en) | 2001-05-17 | 2003-08-19 | Optronx, Inc. | Self-aligning modulator method and associated apparatus |
US6912330B2 (en) | 2001-05-17 | 2005-06-28 | Sioptical Inc. | Integrated optical/electronic circuits and associated methods of simultaneous generation thereof |
US6526187B1 (en) | 2001-05-17 | 2003-02-25 | Optronx, Inc. | Polarization control apparatus and associated method |
US6603889B2 (en) | 2001-05-17 | 2003-08-05 | Optronx, Inc. | Optical deflector apparatus and associated method |
US20030077529A1 (en) * | 2001-10-15 | 2003-04-24 | Honeywell Advanced Circuits, Inc. | Check board replacement systems |
US6831301B2 (en) | 2001-10-15 | 2004-12-14 | Micron Technology, Inc. | Method and system for electrically coupling a chip to chip package |
US6760529B2 (en) | 2001-12-11 | 2004-07-06 | Intel Corporation | Three-dimensional tapered optical waveguides and methods of manufacture thereof |
US20030179973A1 (en) * | 2002-03-19 | 2003-09-25 | Agere Systems Guardian Corp. | Optical modulator having a double diffusion optical waveguide and applications therefor |
US6816648B2 (en) | 2002-05-01 | 2004-11-09 | Intel Corporation | Integrated waveguide gratings by ion implantation |
US6670210B2 (en) | 2002-05-01 | 2003-12-30 | Intel Corporation | Optical waveguide with layered core and methods of manufacture thereof |
US6653161B1 (en) * | 2002-05-16 | 2003-11-25 | Intel Corporation | Method and apparatus for forming a capacitive structure including single crystal silicon |
US7532379B2 (en) * | 2005-09-19 | 2009-05-12 | The Board Of Trustees Of The Leland Stanford Junior University | Optical modulator with side access |
GB201001696D0 (en) * | 2010-02-02 | 2010-03-17 | Imp Innovations Ltd | Method and apparatus for optically outputting information from a semiconductor device |
US8737772B2 (en) * | 2010-02-19 | 2014-05-27 | Kotura, Inc. | Reducing optical loss in an optical modulator using depletion region |
DE102011056166A1 (en) | 2011-12-08 | 2013-06-13 | Universität Stuttgart | Electro-optical phase modulator |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3656836A (en) * | 1968-07-05 | 1972-04-18 | Thomson Csf | Light modulator |
US4432614A (en) * | 1982-12-20 | 1984-02-21 | Gte Laboratories Incorporated | High frequency light modulator |
JPS6131929A (en) * | 1984-07-25 | 1986-02-14 | Matsushita Electric Ind Co Ltd | Semiconductor spectroscope |
JPH0282592A (en) * | 1988-09-19 | 1990-03-23 | Furukawa Electric Co Ltd:The | Semiconductor laser amplifier |
EP0837353A2 (en) * | 1996-10-17 | 1998-04-22 | Nippon Telegraph And Telephone Corporation | Ultra-high-speed semiconductor optical modulator with traveling-wave electrode |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3158746A (en) * | 1960-12-27 | 1964-11-24 | Sprague Electric Co | Light modulation in a semiconductor body |
NL269289A (en) * | 1961-09-15 | |||
US4865427A (en) | 1981-01-12 | 1989-09-12 | Massachusetts Institute Of Technology | Spatial light modulator |
EP0063626B1 (en) | 1981-04-28 | 1985-07-17 | International Business Machines Corporation | Bus arrangement for interconnectiong circuit chips |
US5159700A (en) | 1984-01-16 | 1992-10-27 | Texas Instruments Incorporated | Substrate with optical communication systems between chips mounted thereon and monolithic integration of optical I/O on silicon substrates |
US4695120A (en) | 1985-09-26 | 1987-09-22 | The United States Of America As Represented By The Secretary Of The Army | Optic-coupled integrated circuits |
US4758092A (en) | 1986-03-04 | 1988-07-19 | Stanford University | Method and means for optical detection of charge density modulation in a semiconductor |
US4761620A (en) | 1986-12-03 | 1988-08-02 | American Telephone And Telegraph Company, At&T Bell Laboratories | Optical reading of quantum well device |
FR2622706B1 (en) | 1987-11-03 | 1992-01-17 | Thomson Csf | DYNAMIC OPTICAL INTERCONNECTION DEVICE FOR INTEGRATED CIRCUITS |
US4848880A (en) * | 1987-11-13 | 1989-07-18 | Massachusetts Institute Of Technology | Spatial light modulator |
EP0335104A3 (en) | 1988-03-31 | 1991-11-06 | Siemens Aktiengesellschaft | Arrangement to optically couple one or a plurality of optical senders to one or a plurality of optical receivers of one or a plurality of integrated circuits |
DE3834335A1 (en) | 1988-10-08 | 1990-04-12 | Telefunken Systemtechnik | SEMICONDUCTOR CIRCUIT |
US5198684A (en) | 1990-08-15 | 1993-03-30 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device with optical transmit-receive means |
US5061027A (en) | 1990-09-04 | 1991-10-29 | Motorola, Inc. | Solder-bump attached optical interconnect structure utilizing holographic elements and method of making same |
US5153770A (en) | 1991-06-27 | 1992-10-06 | Xerox Corporation | Total internal reflection electro-optic modulator |
US5625636A (en) | 1991-10-11 | 1997-04-29 | Bryan; Robert P. | Integration of photoactive and electroactive components with vertical cavity surface emitting lasers |
US5237434A (en) | 1991-11-05 | 1993-08-17 | Mcnc | Microelectronic module having optical and electrical interconnects |
US5221989A (en) * | 1991-11-13 | 1993-06-22 | Northrop Corporation | Longitudinal plzt spatial light modulator |
US5276748A (en) | 1991-11-22 | 1994-01-04 | Texas Instruments Incorporated | Vertically-coupled arrow modulators or switches on silicon |
JP2830591B2 (en) | 1992-03-12 | 1998-12-02 | 日本電気株式会社 | Semiconductor optical function device |
US5432630A (en) | 1992-09-11 | 1995-07-11 | Motorola, Inc. | Optical bus with optical transceiver modules and method of manufacture |
EP0600267B1 (en) | 1992-12-03 | 1998-01-28 | Siemens Aktiengesellschaft | Optical bidirectional transmit/receive module |
JP3244205B2 (en) | 1993-06-17 | 2002-01-07 | 信越半導体株式会社 | Semiconductor device |
US6728113B1 (en) | 1993-06-24 | 2004-04-27 | Polychip, Inc. | Method and apparatus for non-conductively interconnecting integrated circuits |
DE4440976A1 (en) | 1994-11-17 | 1996-05-23 | Ant Nachrichtentech | Optical transmitter and receiver with a surface emitting laser |
US5605856A (en) | 1995-03-14 | 1997-02-25 | University Of North Carolina | Method for designing an electronic integrated circuit with optical inputs and outputs |
US5963358A (en) * | 1995-04-26 | 1999-10-05 | Kabushiki Kaisha Toshiba | Semiconductor device and method for its operation |
US5568574A (en) | 1995-06-12 | 1996-10-22 | University Of Southern California | Modulator-based photonic chip-to-chip interconnections for dense three-dimensional multichip module integration |
US5835646A (en) | 1995-09-19 | 1998-11-10 | Fujitsu Limited | Active optical circuit sheet or active optical circuit board, active optical connector and optical MCM, process for fabricating optical waveguide, and devices obtained thereby |
JP3009037B2 (en) * | 1996-10-17 | 2000-02-14 | 日本電信電話株式会社 | Broadband electroabsorption semiconductor optical modulator |
US5872360A (en) | 1996-12-12 | 1999-02-16 | Intel Corporation | Method and apparatus using an infrared laser based optical probe for measuring electric fields directly from active regions in an integrated circuit |
US5864642A (en) | 1997-02-10 | 1999-01-26 | Motorola, Inc. | Electro-optic device board |
US5966234A (en) * | 1997-06-24 | 1999-10-12 | Lucent Technologies Inc | Retro-reflecting electroabsorption optical modulators |
US6075908A (en) * | 1997-12-19 | 2000-06-13 | Intel Corporation | Method and apparatus for optically modulating light through the back side of an integrated circuit die |
US6072179A (en) * | 1998-08-07 | 2000-06-06 | Intel Corporation | Method and apparatus using an infrared laser based optical probe for measuring voltages directly from active regions in an integrated circuit |
-
1999
- 1999-10-25 US US09/435,058 patent/US6215577B1/en not_active Expired - Lifetime
-
2000
- 2000-10-18 CN CNB008177945A patent/CN1208659C/en not_active Expired - Fee Related
- 2000-10-18 IL IL14913100A patent/IL149131A/en active IP Right Grant
- 2000-10-18 JP JP2001533466A patent/JP4617045B2/en not_active Expired - Fee Related
- 2000-10-18 CA CA002389067A patent/CA2389067C/en not_active Expired - Fee Related
- 2000-10-18 KR KR10-2002-7005254A patent/KR100479228B1/en not_active IP Right Cessation
- 2000-10-18 AU AU19696/01A patent/AU1969601A/en not_active Abandoned
- 2000-10-18 WO PCT/US2000/041269 patent/WO2001031388A1/en active IP Right Grant
- 2000-10-18 EP EP00982702A patent/EP1244935A1/en not_active Withdrawn
- 2000-12-05 TW TW089122440A patent/TW475301B/en active
-
2002
- 2002-11-20 HK HK02108390.7A patent/HK1046958A1/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3656836A (en) * | 1968-07-05 | 1972-04-18 | Thomson Csf | Light modulator |
US4432614A (en) * | 1982-12-20 | 1984-02-21 | Gte Laboratories Incorporated | High frequency light modulator |
JPS6131929A (en) * | 1984-07-25 | 1986-02-14 | Matsushita Electric Ind Co Ltd | Semiconductor spectroscope |
JPH0282592A (en) * | 1988-09-19 | 1990-03-23 | Furukawa Electric Co Ltd:The | Semiconductor laser amplifier |
EP0837353A2 (en) * | 1996-10-17 | 1998-04-22 | Nippon Telegraph And Telephone Corporation | Ultra-high-speed semiconductor optical modulator with traveling-wave electrode |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 010, no. 183 (P - 472) 26 June 1986 (1986-06-26) * |
PATENT ABSTRACTS OF JAPAN vol. 014, no. 263 (E - 0938) 7 June 1990 (1990-06-07) * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006504145A (en) * | 2002-10-25 | 2006-02-02 | インテル・コーポレーション | Light beam modulation method and apparatus having ring resonator with charge modulation region |
Also Published As
Publication number | Publication date |
---|---|
AU1969601A (en) | 2001-05-08 |
KR100479228B1 (en) | 2005-03-28 |
CA2389067C (en) | 2006-04-11 |
IL149131A (en) | 2005-12-18 |
CN1413314A (en) | 2003-04-23 |
US6215577B1 (en) | 2001-04-10 |
CA2389067A1 (en) | 2001-05-03 |
HK1046958A1 (en) | 2003-01-30 |
CN1208659C (en) | 2005-06-29 |
JP4617045B2 (en) | 2011-01-19 |
TW475301B (en) | 2002-02-01 |
JP2003513304A (en) | 2003-04-08 |
KR20020041476A (en) | 2002-06-01 |
IL149131A0 (en) | 2002-11-10 |
EP1244935A1 (en) | 2002-10-02 |
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