WO2001035041A3 - Method for rapid thermal processing of substrates - Google Patents

Method for rapid thermal processing of substrates Download PDF

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Publication number
WO2001035041A3
WO2001035041A3 PCT/US2000/041492 US0041492W WO0135041A3 WO 2001035041 A3 WO2001035041 A3 WO 2001035041A3 US 0041492 W US0041492 W US 0041492W WO 0135041 A3 WO0135041 A3 WO 0135041A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
gas stream
hot gas
heated portion
peak temperatures
Prior art date
Application number
PCT/US2000/041492
Other languages
French (fr)
Other versions
WO2001035041A2 (en
WO2001035041A9 (en
Inventor
Lynn David Bollinger
Iskander Tokmouline
Original Assignee
Jetek Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/689,307 external-priority patent/US6467297B1/en
Application filed by Jetek Inc filed Critical Jetek Inc
Priority to JP2001536925A priority Critical patent/JP2003514377A/en
Priority to AU41344/01A priority patent/AU4134401A/en
Priority to EP00992125A priority patent/EP1234328A2/en
Publication of WO2001035041A2 publication Critical patent/WO2001035041A2/en
Publication of WO2001035041A3 publication Critical patent/WO2001035041A3/en
Publication of WO2001035041A9 publication Critical patent/WO2001035041A9/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Abstract

A technique is described for a very rapid thermal treatment of a substrate (32) used to make semiconductor devices. The substrate (32) is subjected to a very hot gas stream (36) such as can be produced from an arc-type plasma generator. The substrate (32) is then moved through the hot gas stream (36) at a velocity selected to sufficiently heat the surface of the substrate (32) to a high temperature at which doping and diffusion processes can be done in an efficient manner, while a thermal gradient is preserved throughout the thickness of the substrate (32). In this manner as the substrate (32) moves through the hot gas stream (36) a rapid heating of the surface is achieved and as the heated portion moves out of the gas stream (36), the bulk of the substrate (32) can assist in the cooling of the heated portion. Sharply defined doping regions can be formed in the substrate. The method yields temperature heating and cooling rates of the order of 105 C/sec, peak temperatures up to the melting point of a substrate such as silicon without permanent distortion or introducing defects into the substrate (32), enables very fast low temperature annealing and activation with peak temperatures of 300 to 1000 C, provides process uniformity and throughput needs for silicon device manufacturing.
PCT/US2000/041492 1999-11-01 2000-10-23 Method for rapid thermal processing of substrates WO2001035041A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001536925A JP2003514377A (en) 1999-11-01 2000-10-23 Rapid heat treatment method for substrates
AU41344/01A AU4134401A (en) 1999-11-01 2000-10-23 Method for rapid thermal processing of substrates
EP00992125A EP1234328A2 (en) 1999-11-01 2000-10-23 Method for rapid thermal processing of substrates

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US16276299P 1999-11-01 1999-11-01
US60/162,762 1999-11-01
US09/689,307 US6467297B1 (en) 2000-10-12 2000-10-12 Wafer holder for rotating and translating wafers
US09/689,307 2000-10-12

Publications (3)

Publication Number Publication Date
WO2001035041A2 WO2001035041A2 (en) 2001-05-17
WO2001035041A3 true WO2001035041A3 (en) 2002-01-24
WO2001035041A9 WO2001035041A9 (en) 2002-08-08

Family

ID=26859041

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/041492 WO2001035041A2 (en) 1999-11-01 2000-10-23 Method for rapid thermal processing of substrates

Country Status (4)

Country Link
EP (1) EP1234328A2 (en)
JP (1) JP2003514377A (en)
AU (1) AU4134401A (en)
WO (1) WO2001035041A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3501768B2 (en) * 2001-04-18 2004-03-02 株式会社ガソニックス Substrate heat treatment apparatus and method of manufacturing flat panel device
JP5105620B2 (en) * 2008-12-05 2012-12-26 株式会社フィルテック Film forming method and film forming apparatus
JP5403247B2 (en) * 2009-09-07 2014-01-29 村田機械株式会社 Substrate transfer device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122043A (en) * 1990-12-06 1992-06-16 Matthews M Dean Electric pulsed power vacuum press
US5336641A (en) * 1992-03-17 1994-08-09 Aktis Corporation Rapid thermal annealing using thermally conductive overcoat
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
US5913127A (en) * 1995-06-29 1999-06-15 Micron Technology, Inc. Method to thermally form hemispherical grain (HSG) silicon to enhance capacitance for application in high density DRAMS
US6121061A (en) * 1997-11-03 2000-09-19 Asm America, Inc. Method of processing wafers with low mass support
US6165273A (en) * 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138973A (en) * 1983-12-27 1985-07-23 Fuji Electric Corp Res & Dev Ltd Manufacture of insulated gate type field effect transistor
JPS61170025A (en) * 1985-01-23 1986-07-31 Nec Corp Formation of diffusion layer
JPS62290120A (en) * 1986-06-09 1987-12-17 Ricoh Co Ltd Formation of single crystal of polycrystalline semiconductor film
JPS63172424A (en) * 1987-01-12 1988-07-16 Fujitsu Ltd Manufacture of semiconductor device
JPH01242141A (en) * 1988-03-23 1989-09-27 Hitachi Ltd High pressure microwave plasma reactor
JPH0448723A (en) * 1990-06-15 1992-02-18 Fuji Xerox Co Ltd Manufacture of semiconductor device
JPH05226260A (en) * 1992-02-13 1993-09-03 Matsushita Electric Ind Co Ltd Method and apparatus for manufacturing photoelectric conversion device
US6051483A (en) * 1996-11-12 2000-04-18 International Business Machines Corporation Formation of ultra-shallow semiconductor junction using microwave annealing
KR20000016138A (en) * 1996-05-31 2000-03-25 피터 무몰라 Apparatus for generating and deflecting a plasma jet

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122043A (en) * 1990-12-06 1992-06-16 Matthews M Dean Electric pulsed power vacuum press
US5336641A (en) * 1992-03-17 1994-08-09 Aktis Corporation Rapid thermal annealing using thermally conductive overcoat
US5913127A (en) * 1995-06-29 1999-06-15 Micron Technology, Inc. Method to thermally form hemispherical grain (HSG) silicon to enhance capacitance for application in high density DRAMS
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
US6165273A (en) * 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
US6121061A (en) * 1997-11-03 2000-09-19 Asm America, Inc. Method of processing wafers with low mass support

Also Published As

Publication number Publication date
JP2003514377A (en) 2003-04-15
EP1234328A2 (en) 2002-08-28
WO2001035041A2 (en) 2001-05-17
AU4134401A (en) 2001-06-06
WO2001035041A9 (en) 2002-08-08

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