WO2001040425A3 - Post chemical-mechanical planarization (cmp) cleaning composition - Google Patents

Post chemical-mechanical planarization (cmp) cleaning composition Download PDF

Info

Publication number
WO2001040425A3
WO2001040425A3 PCT/US2000/042197 US0042197W WO0140425A3 WO 2001040425 A3 WO2001040425 A3 WO 2001040425A3 US 0042197 W US0042197 W US 0042197W WO 0140425 A3 WO0140425 A3 WO 0140425A3
Authority
WO
WIPO (PCT)
Prior art keywords
cmp
cleaning composition
cleaning solution
mechanical planarization
cleaning
Prior art date
Application number
PCT/US2000/042197
Other languages
French (fr)
Other versions
WO2001040425A2 (en
Inventor
Shahriar Naghshineh
Jeff Barnes
Yassaman Hashemi
Ewa B Oldak
Original Assignee
Esc Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Esc Inc filed Critical Esc Inc
Publication of WO2001040425A2 publication Critical patent/WO2001040425A2/en
Publication of WO2001040425A3 publication Critical patent/WO2001040425A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2003—Alcohols; Phenols
    • C11D3/2041—Dihydric alcohols
    • C11D3/2058—Dihydric alcohols aromatic
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2003—Alcohols; Phenols
    • C11D3/2065—Polyhydric alcohols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2072—Aldehydes-ketones
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • C11D2111/22—

Abstract

A cleaning solution is provided for cleaning copper-containing microelectronic substrates, particularly for post-CMP or Via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethanolamine, gallic acid, and water. The pH of the cleaning solution is greater than 10.
PCT/US2000/042197 1999-11-16 2000-11-16 Post chemical-mechanical planarization (cmp) cleaning composition WO2001040425A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/440,917 1999-11-16
US09/440,917 US6194366B1 (en) 1999-11-16 1999-11-16 Post chemical-mechanical planarization (CMP) cleaning composition

Publications (2)

Publication Number Publication Date
WO2001040425A2 WO2001040425A2 (en) 2001-06-07
WO2001040425A3 true WO2001040425A3 (en) 2002-01-03

Family

ID=23750724

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/042197 WO2001040425A2 (en) 1999-11-16 2000-11-16 Post chemical-mechanical planarization (cmp) cleaning composition

Country Status (2)

Country Link
US (1) US6194366B1 (en)
WO (1) WO2001040425A2 (en)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521405B2 (en) * 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
US6492308B1 (en) * 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6723691B2 (en) * 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
TWI229123B (en) * 2000-03-03 2005-03-11 Nec Electronics Corp Anticorrosive treating concentrate
US6811658B2 (en) * 2000-06-29 2004-11-02 Ebara Corporation Apparatus for forming interconnects
US6310019B1 (en) * 2000-07-05 2001-10-30 Wako Pure Chemical Industries, Ltd. Cleaning agent for a semi-conductor substrate
KR100338777B1 (en) * 2000-07-22 2002-05-31 윤종용 Manufacturing method of semiconductor device for protecting Cu layer from post chemical mechanical polishing-corrosion and chemical mechanical polisher used in the same.
US6498131B1 (en) * 2000-08-07 2002-12-24 Ekc Technology, Inc. Composition for cleaning chemical mechanical planarization apparatus
US6656894B2 (en) * 2000-12-07 2003-12-02 Ashland Inc. Method for cleaning etcher parts
US6627587B2 (en) * 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
JP4945857B2 (en) 2001-06-13 2012-06-06 Ｊｓｒ株式会社 Polishing pad cleaning composition and polishing pad cleaning method
US6653265B2 (en) * 2001-06-20 2003-11-25 Cornell Research Foundation, Inc. Removable marking system
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
MY143399A (en) 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
US20030119692A1 (en) * 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
US6828226B1 (en) 2002-01-09 2004-12-07 Taiwan Semiconductor Manufacturing Company, Limited Removal of SiON residue after CMP
US7393819B2 (en) 2002-07-08 2008-07-01 Mallinckrodt Baker, Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
US7198705B2 (en) * 2002-12-19 2007-04-03 Texas Instruments Incorporated Plating-rinse-plating process for fabricating copper interconnects
US20040175942A1 (en) * 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
TWI264620B (en) * 2003-03-07 2006-10-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6930017B2 (en) * 2003-08-21 2005-08-16 Micron Technology, Inc. Wafer Cleaning method and resulting wafer
US6936534B2 (en) * 2003-09-17 2005-08-30 Micron Technology, Inc. Method for the post-etch cleaning of multi-level damascene structures having underlying copper metallization
WO2005066325A2 (en) * 2003-12-31 2005-07-21 Ekc Technology, Inc. Cleaner compositions containing free radical quenchers
KR100795364B1 (en) * 2004-02-10 2008-01-17 삼성전자주식회사 Composition for cleaning a semiconductor substrate, method of cleaning and method for manufacturing a conductive structure using the same
US7435712B2 (en) * 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US7498295B2 (en) * 2004-02-12 2009-03-03 Air Liquide Electronics U.S. Lp Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide
US7087564B2 (en) * 2004-03-05 2006-08-08 Air Liquide America, L.P. Acidic chemistry for post-CMP cleaning
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
KR20050110470A (en) * 2004-05-19 2005-11-23 테크노세미켐 주식회사 Composition for cleaning a semiconductor substrate, method for cleaning a semiconductor substrate and method for manufacturing a semiconductor device using the same
KR20060075315A (en) * 2004-12-28 2006-07-04 동부일렉트로닉스 주식회사 A cleaning method for removing cu compound byproducts for manufacturing a semiconductor device
US20060148666A1 (en) * 2004-12-30 2006-07-06 Advanced Technology Materials Inc. Aqueous cleaner with low metal etch rate
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
KR101331747B1 (en) * 2005-01-27 2013-11-20 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Compositions for processing of semiconductor substrates
US7365045B2 (en) * 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
SG162725A1 (en) * 2005-05-26 2010-07-29 Advanced Tech Materials Copper passivating post-chemical mechanical polishing cleaning composition and method of use
EP2687589A3 (en) * 2005-05-26 2014-05-07 Advanced Technology Materials, Inc. Copper passivating post-chemical mechanical polishing cleaning composition and method of use
EP1891482B1 (en) 2005-06-07 2014-04-30 Advanced Technology Materials, Inc. Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition
WO2006138235A2 (en) * 2005-06-13 2006-12-28 Advanced Technology Materials, Inc. Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
ES2273599B1 (en) 2005-10-14 2008-06-01 Universidad De Barcelona COMPOUNDS FOR THE TREATMENT OF HEADPHONE FIBRILATION.
TW200734448A (en) * 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
US7732393B2 (en) * 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US20070232511A1 (en) * 2006-03-28 2007-10-04 Matthew Fisher Cleaning solutions including preservative compounds for post CMP cleaning processes
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
EP2082024A4 (en) * 2006-09-25 2010-11-17 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
US20090120457A1 (en) * 2007-11-09 2009-05-14 Surface Chemistry Discoveries, Inc. Compositions and method for removing coatings and preparation of surfaces for use in metal finishing, and manufacturing of electronic and microelectronic devices
JP5379441B2 (en) 2008-10-09 2013-12-25 関東化学株式会社 Alkaline aqueous solution composition for substrate processing
JP5873718B2 (en) 2008-10-21 2016-03-01 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Copper cleaning and protection compound
EP2449076B1 (en) 2009-06-30 2016-09-21 Basf Se Aqueous alkaline cleaning compositions and methods of their use
CN102044474B (en) * 2009-10-13 2015-04-29 中芯国际集成电路制造(上海)有限公司 Surface treatment method of copper metal layer subjected to chemically mechanical polishing
TWI447224B (en) * 2009-12-25 2014-08-01 Uwiz Technology Co Ltd Cleaning composition
TWI513815B (en) 2010-01-29 2015-12-21 Entegris Inc Cleaning agent for semiconductor provided with metal wiring
WO2012011020A2 (en) 2010-07-19 2012-01-26 Basf Se Aqueous alkaline cleaning compositions and methods of their use
CN105304485B (en) 2010-10-06 2019-02-12 恩特格里斯公司 The composition and method of selective etch metal nitride
WO2012097143A2 (en) 2011-01-13 2012-07-19 Advanced Technology Materials, Inc. Formulations for the removal of particles generated by cerium- containing solutions
CN102420173B (en) * 2011-06-07 2015-04-08 上海华力微电子有限公司 Surface treatment method for improving copper interconnection reliability
JP5933950B2 (en) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Etching solution for copper or copper alloy
US10176979B2 (en) 2012-02-15 2019-01-08 Entegris, Inc. Post-CMP removal using compositions and method of use
KR20150016574A (en) 2012-05-18 2015-02-12 인티그리스, 인코포레이티드 Composition and process for stripping photoresist from a surface including titanium nitride
KR102118964B1 (en) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Compositions for cleaning iii-v semiconductor materials and methods of using same
EP2964725B1 (en) 2013-03-04 2021-06-23 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
JP6723152B2 (en) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド Compositions and methods for selectively etching titanium nitride
WO2015017659A1 (en) 2013-07-31 2015-02-05 Advanced Technology Materials, Inc. AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY
WO2015031620A1 (en) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
EP3077129B1 (en) 2013-12-06 2020-11-11 FujiFilm Electronic Materials USA, Inc. Cleaning formulation for removing residues on surfaces
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
SG11201605003WA (en) 2013-12-20 2016-07-28 Entegris Inc Use of non-oxidizing strong acids for the removal of ion-implanted resist
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
WO2015116679A1 (en) * 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
WO2015116818A1 (en) * 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
US10100272B2 (en) 2014-07-18 2018-10-16 Cabot Microelectronics Corporation Cleaning composition following CMP and methods related thereto
CN107208005A (en) * 2015-01-13 2017-09-26 嘉柏微电子材料股份公司 Cleasing compositions and method for the clean semiconductor chip after chemically mechanical polishing
KR20200138742A (en) 2018-03-28 2020-12-10 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. Cleaning composition
KR20210052445A (en) 2018-08-30 2021-05-10 미쯔비시 케미컬 주식회사 Cleaning liquid, cleaning method, and manufacturing method of semiconductor wafer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0678571A2 (en) * 1994-04-20 1995-10-25 MALLINCKRODT BAKER, Inc. pH Adjusted nonionic surfactant containing alkaline cleaner composition for cleaning microelectronics substrates
EP0812011A2 (en) * 1996-06-05 1997-12-10 Wako Pure Chemical Industries, Ltd Cleaning agent
WO1998022568A1 (en) * 1996-11-22 1998-05-28 Advanced Chemical Systems International, Inc. Stripping formulation including catechol, hydroxylamine, non-alkanolamine, water for post plasma ashed wafer cleaning
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168989A (en) 1975-06-10 1979-09-25 Westinghouse Electric Corp. Stripping composition for thermoset resins and method of repairing electrical apparatus
US4294729A (en) 1979-12-17 1981-10-13 International Business Machines Corporation Composition containing alcohol and use thereof for epoxy removal
US4487708A (en) 1980-07-14 1984-12-11 Betz Laboratories, Inc. Hydroquinone oxygen scavenger for use in aqueous mediums
US4395348A (en) 1981-11-23 1983-07-26 Ekc Technology, Inc. Photoresist stripping composition and method
JPS59219743A (en) 1983-05-28 1984-12-11 Tokyo Ohka Kogyo Co Ltd Positive type resist developing solution
US4617251A (en) 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
DE3523088A1 (en) 1985-06-28 1987-01-08 Hoechst Ag METHOD FOR AVOIDING CORROSION OF METAL MATERIALS
JPH0626708B2 (en) 1985-09-10 1994-04-13 関西ペイント株式会社 Composite coating formation method
DE3537441A1 (en) 1985-10-22 1987-04-23 Hoechst Ag SOLVENT FOR REMOVING PHOTORESISTS
US4744834A (en) 1986-04-30 1988-05-17 Noor Haq Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide
US4770713A (en) 1986-12-10 1988-09-13 Advanced Chemical Technologies, Inc. Stripping compositions containing an alkylamide and an alkanolamine and use thereof
US5185235A (en) 1987-09-09 1993-02-09 Tokyo Ohka Kogyo Co., Ltd. Remover solution for photoresist
US5190723A (en) 1988-02-25 1993-03-02 Ciba-Geigy Corporation Process for inhibiting corrosion
US5091103A (en) 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
JP3160344B2 (en) 1991-01-25 2001-04-25 アシュランド インコーポレーテッド Organic stripping composition
US5988186A (en) 1991-01-25 1999-11-23 Ashland, Inc. Aqueous stripping and cleaning compositions
US5496491A (en) 1991-01-25 1996-03-05 Ashland Oil Company Organic stripping composition
US5753601A (en) 1991-01-25 1998-05-19 Ashland Inc Organic stripping composition
US5556482A (en) 1991-01-25 1996-09-17 Ashland, Inc. Method of stripping photoresist with composition containing inhibitor
US5308745A (en) 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5407788A (en) 1993-06-24 1995-04-18 At&T Corp. Photoresist stripping method
US5419877A (en) 1993-09-17 1995-05-30 General Atomics Acoustic barrier separator
US6326130B1 (en) 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US5419779A (en) 1993-12-02 1995-05-30 Ashland Inc. Stripping with aqueous composition containing hydroxylamine and an alkanolamine
US5567574A (en) * 1995-01-10 1996-10-22 Mitsubishi Gas Chemical Company, Inc. Removing agent composition for photoresist and method of removing
US5597420A (en) 1995-01-17 1997-01-28 Ashland Inc. Stripping composition having monoethanolamine
US5563119A (en) * 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds
US5783495A (en) 1995-11-13 1998-07-21 Micron Technology, Inc. Method of wafer cleaning, and system and cleaning solution regarding same
KR100360394B1 (en) 1995-12-20 2003-01-24 삼성전자 주식회사 Method for cleaning semiconductor substrate and cleaning solution used for the same
US5704987A (en) 1996-01-19 1998-01-06 International Business Machines Corporation Process for removing residue from a semiconductor wafer after chemical-mechanical polishing
US5665688A (en) 1996-01-23 1997-09-09 Olin Microelectronics Chemicals, Inc. Photoresist stripping composition
US5648324A (en) 1996-01-23 1997-07-15 Ocg Microelectronic Materials, Inc. Photoresist stripping composition
KR100207469B1 (en) 1996-03-07 1999-07-15 윤종용 Cleaning solution for semiconductor substrate and cleaning method thereby
US5932021A (en) 1996-06-26 1999-08-03 Cala; Francis R. Aqueous cleaning composition for removing flux and method of use
US5855811A (en) 1996-10-03 1999-01-05 Micron Technology, Inc. Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication
US5709756A (en) 1996-11-05 1998-01-20 Ashland Inc. Basic stripping and cleaning composition
US5698503A (en) 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition
US5756398A (en) 1997-03-17 1998-05-26 Rodel, Inc. Composition and method for polishing a composite comprising titanium
US5922136A (en) 1997-03-28 1999-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Post-CMP cleaner apparatus and method
US5935871A (en) 1997-08-22 1999-08-10 Motorola, Inc. Process for forming a semiconductor device
US5997658A (en) * 1998-01-09 1999-12-07 Ashland Inc. Aqueous stripping and cleaning compositions

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
EP0678571A2 (en) * 1994-04-20 1995-10-25 MALLINCKRODT BAKER, Inc. pH Adjusted nonionic surfactant containing alkaline cleaner composition for cleaning microelectronics substrates
EP0812011A2 (en) * 1996-06-05 1997-12-10 Wako Pure Chemical Industries, Ltd Cleaning agent
WO1998022568A1 (en) * 1996-11-22 1998-05-28 Advanced Chemical Systems International, Inc. Stripping formulation including catechol, hydroxylamine, non-alkanolamine, water for post plasma ashed wafer cleaning

Also Published As

Publication number Publication date
US6194366B1 (en) 2001-02-27
WO2001040425A2 (en) 2001-06-07

Similar Documents

Publication Publication Date Title
WO2001040425A3 (en) Post chemical-mechanical planarization (cmp) cleaning composition
WO2002065538A3 (en) Post chemical-mechanical planarization (cmp) cleaning composition
WO2001095381A3 (en) Post chemical-mechanical planarization (cmp) cleaning composition
EP1230334A4 (en) Non-corrosive cleaning composition for removing plasma etching residues
TW200706647A (en) Aqueous cleaner with low metal etch rate
EP1446460A4 (en) Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
WO1999015609A8 (en) Aqueous rinsing composition
AU6348600A (en) Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
MY146827A (en) Aqueous cleaning composition for removing residues and method using same
AU2598900A (en) Acidic composition containing fluoride for removal of photoresists and etch residues
MY124691A (en) Method of polishing a silicon wafer using a polishing composition and a surface treating composition
EP1451642A4 (en) Chemical rinse composition
AU4980300A (en) Compositions for cleaning organic and plasma etched residues for semiconductor devices
ATE369623T1 (en) ALKALINE CLEANING AGENTS FOR CLEANING AFTER CHEMICAL-MECHANICAL PLANARIZATION
IL173664A (en) Stripping and cleaning compositions for microelectronics
NO20055662D0 (en) Use of quaternary ammonium carbonates and bicarbonates as corrosion protection agents, methods to prevent corrosion and anti-corrosive coatings using these agents
WO2006049892A3 (en) Metal ion-containing cmp composition and method for using the same
TW200502381A (en) Cleaning liquid composition for semiconductor substrate
WO2000078139A3 (en) Liquid herbicide composition
ATE529489T1 (en) POLISHING COMPOSITION AND POLISHING METHOD
EP1535979A3 (en) Compositions and methods for chemical mechanical polishing silica and silicon nitride
AU2001293969A1 (en) Aromatic sulfonation reactions
WO2006052692A3 (en) Post etch cleaning composition for use with substrates having aluminum
TW200519197A (en) Tungsten metal removing solution and method for removing tungsten metal by use thereof
GB9600030D0 (en) Cleaning compositions

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CN JP KR

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): CN JP KR

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

122 Ep: pct application non-entry in european phase