WO2001056744A9 - Endpoint monitoring with polishing rate change - Google Patents
Endpoint monitoring with polishing rate changeInfo
- Publication number
- WO2001056744A9 WO2001056744A9 PCT/US2001/003280 US0103280W WO0156744A9 WO 2001056744 A9 WO2001056744 A9 WO 2001056744A9 US 0103280 W US0103280 W US 0103280W WO 0156744 A9 WO0156744 A9 WO 0156744A9
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- substrate
- endpoint
- layer
- time
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 216
- 238000012544 monitoring process Methods 0.000 title claims description 23
- 230000008859 change Effects 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 114
- 238000001514 detection method Methods 0.000 claims abstract description 21
- 238000013459 approach Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 32
- 239000000126 substance Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000002002 slurry Substances 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 16
- 238000005259 measurement Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000013041 optical simulation Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001556623A JP5110754B2 (en) | 2000-02-01 | 2001-01-31 | End point monitoring by changing polishing rate |
EP01903464A EP1251998A1 (en) | 2000-02-01 | 2001-01-31 | Endpoint monitoring with polishing rate change |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/495,616 US6309276B1 (en) | 2000-02-01 | 2000-02-01 | Endpoint monitoring with polishing rate change |
US09/495,616 | 2000-02-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001056744A1 WO2001056744A1 (en) | 2001-08-09 |
WO2001056744A9 true WO2001056744A9 (en) | 2002-10-17 |
Family
ID=23969313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/003280 WO2001056744A1 (en) | 2000-02-01 | 2001-01-31 | Endpoint monitoring with polishing rate change |
Country Status (5)
Country | Link |
---|---|
US (1) | US6309276B1 (en) |
EP (1) | EP1251998A1 (en) |
JP (1) | JP5110754B2 (en) |
KR (1) | KR20010078154A (en) |
WO (1) | WO2001056744A1 (en) |
Families Citing this family (42)
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WO2000060650A1 (en) * | 1999-03-31 | 2000-10-12 | Nikon Corporation | Polishing body, polisher, method for adjusting polisher, method for measuring thickness of polished film or end point of polishing, method for producing semiconductor device |
US6506097B1 (en) * | 2000-01-18 | 2003-01-14 | Applied Materials, Inc. | Optical monitoring in a two-step chemical mechanical polishing process |
US6924641B1 (en) * | 2000-05-19 | 2005-08-02 | Applied Materials, Inc. | Method and apparatus for monitoring a metal layer during chemical mechanical polishing |
US6428673B1 (en) * | 2000-07-08 | 2002-08-06 | Semitool, Inc. | Apparatus and method for electrochemical processing of a microelectronic workpiece, capable of modifying processing based on metrology |
US6747734B1 (en) | 2000-07-08 | 2004-06-08 | Semitool, Inc. | Apparatus and method for processing a microelectronic workpiece using metrology |
US6712669B1 (en) * | 2001-02-15 | 2004-03-30 | Tawain Semiconductor Manufacturing Company | BPSG chemical mechanical planarization process control for production control and cost savings |
US6608495B2 (en) | 2001-03-19 | 2003-08-19 | Applied Materials, Inc. | Eddy-optic sensor for object inspection |
US6966816B2 (en) * | 2001-05-02 | 2005-11-22 | Applied Materials, Inc. | Integrated endpoint detection system with optical and eddy current monitoring |
US6534328B1 (en) * | 2001-07-19 | 2003-03-18 | Advanced Micro Devices, Inc. | Method of modeling and controlling the endpoint of chemical mechanical polishing operations performed on a process layer, and system for accomplishing same |
US6811466B1 (en) * | 2001-12-28 | 2004-11-02 | Applied Materials, Inc. | System and method for in-line metal profile measurement |
US7001242B2 (en) * | 2002-02-06 | 2006-02-21 | Applied Materials, Inc. | Method and apparatus of eddy current monitoring for chemical mechanical polishing |
KR100434189B1 (en) * | 2002-03-21 | 2004-06-04 | 삼성전자주식회사 | Apparatus and method for chemically and mechanically polishing semiconductor wafer |
US6783426B2 (en) * | 2002-04-10 | 2004-08-31 | Agere Systems, Inc. | Method and apparatus for detection of chemical mechanical planarization endpoint and device planarity |
CN100352067C (en) * | 2003-09-23 | 2007-11-28 | 深圳市方大国科光电技术有限公司 | Reduction method of sapphire substrate |
US7040958B2 (en) * | 2004-05-21 | 2006-05-09 | Mosel Vitelic, Inc. | Torque-based end point detection methods for chemical mechanical polishing tool which uses ceria-based CMP slurry to polish to protective pad layer |
US7363195B2 (en) * | 2004-07-07 | 2008-04-22 | Sensarray Corporation | Methods of configuring a sensor network |
US7361602B1 (en) * | 2004-10-22 | 2008-04-22 | Cypress Semiconductor Corporation | CMP process |
US8337278B2 (en) | 2007-09-24 | 2012-12-25 | Applied Materials, Inc. | Wafer edge characterization by successive radius measurements |
CN102089122A (en) * | 2008-05-15 | 2011-06-08 | 3M创新有限公司 | Polishing pad with endpoint window and systems and method using the same |
TWI396603B (en) * | 2008-06-26 | 2013-05-21 | 3M Innovative Properties Co | Polishing pad with porous elements and method of making and using the same |
TWI415711B (en) * | 2008-07-18 | 2013-11-21 | 3M Innovative Properties Co | Polishing pad with floating elements and method of making and using the same |
US9579767B2 (en) * | 2010-04-28 | 2017-02-28 | Applied Materials, Inc. | Automatic generation of reference spectra for optical monitoring of substrates |
US8694144B2 (en) | 2010-08-30 | 2014-04-08 | Applied Materials, Inc. | Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing |
US8747189B2 (en) * | 2011-04-26 | 2014-06-10 | Applied Materials, Inc. | Method of controlling polishing |
US9023667B2 (en) * | 2011-04-27 | 2015-05-05 | Applied Materials, Inc. | High sensitivity eddy current monitoring system |
US9960088B2 (en) * | 2011-11-07 | 2018-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | End point detection in grinding |
US9358660B2 (en) | 2011-11-07 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Grinding wheel design with elongated teeth arrangement |
JP6252052B2 (en) * | 2013-09-09 | 2017-12-27 | 富士通セミコンダクター株式会社 | Polishing method, semiconductor device manufacturing method, and polishing end point detection program |
US9490186B2 (en) * | 2013-11-27 | 2016-11-08 | Applied Materials, Inc. | Limiting adjustment of polishing rates during substrate polishing |
KR102203419B1 (en) * | 2013-12-09 | 2021-01-15 | 주식회사 케이씨텍 | Chemical mechanical polishing method and apparatus |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
CN107078048B (en) | 2014-10-17 | 2021-08-13 | 应用材料公司 | CMP pad construction with composite material properties using additive manufacturing process |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
US9475168B2 (en) * | 2015-03-26 | 2016-10-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad window |
CN113103145B (en) | 2015-10-30 | 2023-04-11 | 应用材料公司 | Apparatus and method for forming polishing article having desired zeta potential |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | Abrasive delivery polishing pads and manufacturing methods thereof |
WO2019152222A1 (en) | 2018-02-05 | 2019-08-08 | Applied Materials, Inc. | Piezo-electric end-pointing for 3d printed cmp pads |
CN112654655A (en) | 2018-09-04 | 2021-04-13 | 应用材料公司 | Advanced polishing pad formulations |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
Family Cites Families (26)
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US4179852A (en) | 1978-03-13 | 1979-12-25 | Three Phoenix Company | Method and apparatus for polishing floppy discs |
JPS62199354A (en) * | 1986-02-21 | 1987-09-03 | Kashio Denki Kk | Automatic lapping finish method and device for crystalline plate and the like |
JPH0632194B2 (en) | 1986-03-24 | 1994-04-27 | 九州日立マクセル株式会社 | Disk Cleaner |
JPH03234467A (en) | 1990-02-05 | 1991-10-18 | Canon Inc | Polishing method of metal mold mounting surface of stamper and polishing machine therefor |
US5081796A (en) | 1990-08-06 | 1992-01-21 | Micron Technology, Inc. | Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer |
US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
US5700180A (en) * | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
US5413941A (en) | 1994-01-06 | 1995-05-09 | Micron Technology, Inc. | Optical end point detection methods in semiconductor planarizing polishing processes |
US5791969A (en) | 1994-11-01 | 1998-08-11 | Lund; Douglas E. | System and method of automatically polishing semiconductor wafers |
JPH08174411A (en) | 1994-12-22 | 1996-07-09 | Ebara Corp | Polishing device |
TW316995B (en) | 1995-01-19 | 1997-10-01 | Tokyo Electron Co Ltd | |
US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US5593343A (en) | 1995-04-03 | 1997-01-14 | Bauer; Jason | Apparatus for reconditioning digital recording discs |
US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
US5605760A (en) | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
US5640242A (en) | 1996-01-31 | 1997-06-17 | International Business Machines Corporation | Assembly and method for making in process thin film thickness measurments |
US5958148A (en) * | 1996-07-26 | 1999-09-28 | Speedfam-Ipec Corporation | Method for cleaning workpiece surfaces and monitoring probes during workpiece processing |
US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
JPH1098960A (en) | 1996-10-01 | 1998-04-21 | Yamaguchi Engei:Kk | Cultivation system |
US6012970A (en) | 1997-01-15 | 2000-01-11 | Motorola, Inc. | Process for forming a semiconductor device |
US6111634A (en) | 1997-05-28 | 2000-08-29 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing |
US6108091A (en) | 1997-05-28 | 2000-08-22 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing |
US6168683B1 (en) | 1998-02-24 | 2001-01-02 | Speedfam-Ipec Corporation | Apparatus and method for the face-up surface treatment of wafers |
US6068539A (en) * | 1998-03-10 | 2000-05-30 | Lam Research Corporation | Wafer polishing device with movable window |
-
2000
- 2000-02-01 US US09/495,616 patent/US6309276B1/en not_active Expired - Lifetime
-
2001
- 2001-01-30 KR KR1020010004238A patent/KR20010078154A/en not_active Application Discontinuation
- 2001-01-31 JP JP2001556623A patent/JP5110754B2/en not_active Expired - Lifetime
- 2001-01-31 EP EP01903464A patent/EP1251998A1/en not_active Withdrawn
- 2001-01-31 WO PCT/US2001/003280 patent/WO2001056744A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JP5110754B2 (en) | 2012-12-26 |
EP1251998A1 (en) | 2002-10-30 |
KR20010078154A (en) | 2001-08-20 |
WO2001056744A1 (en) | 2001-08-09 |
JP2003521817A (en) | 2003-07-15 |
US6309276B1 (en) | 2001-10-30 |
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