WO2001057977A1 - Vcsel mit monolithisch integriertem photodetektor - Google Patents
Vcsel mit monolithisch integriertem photodetektor Download PDFInfo
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- WO2001057977A1 WO2001057977A1 PCT/DE2001/000352 DE0100352W WO0157977A1 WO 2001057977 A1 WO2001057977 A1 WO 2001057977A1 DE 0100352 W DE0100352 W DE 0100352W WO 0157977 A1 WO0157977 A1 WO 0157977A1
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- layer
- photodetector
- component according
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- radiation
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
Definitions
- the present invention relates to VCSEL (Vertical Cavity Surface Emitting Laser) with a photodetector, which is monolithically integrated in the resonator between the resonator end mirrors (DBR grating), for optical transmission paths for high data rates.
- VCSEL Vertical Cavity Surface Emitting Laser
- the electrical and optical properties e.g. Threshold current and differential efficiency vary in the case of laser diodes from component to component.
- the properties of each component depend on the temperature and are subject to long-term and short-term fluctuations. Therefore, it is necessary to have an electrical feedback signal that provides direct information about the actual optical output power of the laser and can be used to measure both the DC bias and the modulation depth of the laser current during the
- Emitting Laser Diode with an Integrated photo-diode in Proc. LEOS 1995, pp. 416 - 417, October 1995, by SF Lim et al.:” Intracavity Quantum-Well Photodetection of a Vertical-Cavity Surface-Emitting Laser "in ' Proc. Int. SC -Laser Conf. October 1996, Haif / Israel, pp. 183 - 184, and - by JA Lott et al.: "Deep Red Vertical Cavity Surface Emitting Lasers With Monolithically Integrated Heterojunction Phototransistors For Output Power Control "" in Proc. Int. SC Laser Conf. October 1996, Haifa / Israel, pp. 185-186. Further sources are patents US 5,757,837, US 5,742,630, US 5,577,064, US 5,606,572 and US 5,136,603.
- the published laser structures with integrated photodetectors do not meet all of the following minimum conditions: easy to manufacture without loss of yield on the wafer, good contrast to spontaneous emission and ambient light in order to be able to determine both the laser threshold and the differential efficiency, little or no additional Requirements for the voltage to be applied for the overall system, reproducible and frequency-independent feedback properties and only slight changes in the optical and electrical properties over long operating times (deterioration).
- Photodetectors in the semiconductor resonator are practically not sensitive to ambient light or stray light. Since the detector properties of these photodetectors are based primarily on the properties of the epitaxial layer growth, a good yield of functional components can also be achieved in the case of production with large tolerances. In order to produce components whose photodetectors provide a good contrast against spontaneous emission, one can either reduce the active detector area to a size of the laser spot, but this poses additional technical problems and thus reduces the yield (IY Han, YH Lee: "Oxide-apertured photodetector integrated on VCSEL "in Proc. CLEO 99, p. 176); or the sensitivity to the coherent light compared to the spontaneous emission can be increased by a thin absorbing area on an antinode of the standing wave. By reducing the distance of this thin absorbent area from the active area, the contrast against spontaneous
- Emission can be increased further. However, this also increases the absorption of the laser radiation, so that the differenti haste efficiency is reduced, which leads to very high sensitivity of the detector of about 1A / W.
- Another problem lies in avoiding higher laser impedances in an integrated component compared to a single VCSEL and thus avoiding difficulties when using a driver circuit for high-frequency modulation of the laser current.
- electrical crosstalk between the laser and the detector must be minimized if unchanged RF components of the monitor signal are used, e.g. when adjusting DC bias and modulation depth.
- the object of the present invention is to provide an improved VCSEL with a monolithically integrated photodetector which is simple to manufacture and has a sufficiently low laser impedance, low crosstalk and good contrast against spontaneous emission.
- the component according to the invention is a VCSEL with a photodetector which is integrated in one of the DBR gratings provided as a resonator mirror, so that no mechanical adjustment of an external monitor diode is required.
- the coherent radiation generated in the resonator is emitted on the surface of the component.
- the photodetector in one of the DBR reflectors comprises a thin absorbing layer which is arranged in the region of an antinode of the standing wave of a laser mode.
- the energy band edge of the material in the thin absorbent area is selected to be slightly lower than the energy which corresponds to the frequency of the emitted radiation in order to avoid a reproducible speak to prevent the detector, but without absorbing the low energy portion of the spontaneous emission.
- Laser and photodetector are electrically controlled via a common electrode, preferably an n-contact.
- This contact is located on a spacer layer which is doped in an n-conducting manner with a sufficient dopant concentration in order to ensure a low ohmic resistance within the layer and also to ensure good ohmic metal-semiconductor contact.
- This spacer layer ensures low laser impedance and low electrical crosstalk between the laser and the photodetector.
- This spacer layer or a further layer between the laser-active region and the photodetector is preferably selected such that the coherent light passes through this layer, but the portion of high energy of the spontaneous emission is absorbed, so that a low-pass filter is used for the spontaneous emission is formed.
- a band-pass filter is thus formed overall, whose pass band lies around the laser radiation frequency and thus further increases the contrast against spontaneous emission.
- FIG. 1 shows a cross section through an exemplary embodiment of the component.
- Figure 2 shows a further embodiment.
- FIG. 3 shows an equivalent circuit diagram for the component structures shown in FIGS. 1 and 2.
- FIG. 4 shows a diagram for a field distribution around the spacer layer.
- FIG. 5 shows an energy band diagram of a special embodiment.
- FIG. 1 shows a cross section of a preferred embodiment of the component according to the invention with a photodetector between a substrate and the radiation-generating active region
- FIG. 2 shows a corresponding one
- Cross section for a component shows, in which the photodetector is arranged on the side of the active region facing away from the substrate.
- a substrate 12 which is preferably p-doped with a rear-side contact 10 one above the other there is a first portion 15 of a lower first DBR grating doped in this example, an intrinsically conductive region 20 of the photodetector a thin absorption layer 25 arranged therein, a spacer layer 30, which is doped here in a highly n-type manner, an n-type doped second portion 40 of the first DBR grating, a laser-active region 45 with an active layer 47 and a p-doped top second DBR grating.
- the active region 45, 47 is preferably designed as a SCH (Separate Confinement Heterostructure).
- SCH Separatate Confinement Heterostructure
- the absorption edge of the energy band in the absorbing layer 25 is chosen to be slightly lower than the energy of the coherent light of the laser mode generated. In this way, the radiation of the laser mode can be reliably detected without simultaneously recording the proportion of low energy in the spontaneous emission.
- the absorption edge can be selected at around 1450 meV.
- the thin absorption layer is typically about 7 nm thick and is designed as an InGaAs potential well with an indium content of a few percent. The influence of excitons and the temperature must be taken into account when determining the correct absorption edge.
- the absorption edge can be measured, for example, by means of transmission spectroscopy. The smaller the difference between the effective energy band gap and the energy of the laser radiation, the smaller the proportion of the absorbed spontaneous emission in the upper energy range and the better the contrast against the spontaneous emission.
- the spacer layer 30 preferably has a thickness of several wavelengths of the laser radiation and is preferably arranged directly above the intrinsically conductive region 20 of the photodetector.
- the effective energy band gap of the spacer layer 30 is chosen such that it does not absorb the coherent radiation of the laser mode, but does absorb the high energy portion of the spontaneous emission.
- An upper annular p-contact 55 completes the device.
- a translucent upper contact can also be applied, which then covers the entire light exit surface.
- light exit down through the substrate 12 can also be provided.
- the substrate is then correspondingly formed from a semiconductor material that is transparent to the emission wavelength.
- other laser wavelengths for example 980 nm or 1300 nm, are also possible with a correspondingly selected semiconductor material of the thin absorption layer of the photodetector. This material is slightly different from the material of the active layer because a slightly lower energy band gap is required in the absorbent layer than in the active layer.
- the signs of the doping (n-type or p-type) can be interchanged.
- ⁇ 0 rr ⁇ ⁇ ⁇ - 03 O l- 1 P ) 2 2 ⁇ ⁇ - et ⁇ - H i ⁇ ⁇ 2 ⁇ - HP ⁇ rt JD ii i I d H- TJ tr ⁇ ! ⁇ ⁇ tr (Jl ⁇ ⁇ 3 2 ⁇ ⁇ rt> -ü _ ii t?
- 03 d 2 ⁇ rt ⁇ ⁇ d 03 H 3 ii H JD ii H 3 N • rt 2 1 * Ü ⁇ ü m rt P.
- Dry etching processes are preferably used for the production.
- the n-contact 35 applied on the spacer layer 30 need not be an annular contact. Because of the low ohmic resistance of the sufficiently highly n-doped spacer layer 30, an asymmetrical lateral charge carrier injection is also possible without deterioration of the laser properties.
- the contact 35 can therefore be applied on a lateral upper side of the spacer layer 30 outside the area of the mesa with the photodetector. Then the lower part of the structure with the laser-active region can also be designed as a mesa with dimensions that are almost as small as the dimensions of the photodetector region.
- the remaining properties of the exemplary embodiments described can be designed in accordance with conventional VCSELs.
- Gold-metal alloys are preferred contact materials. Before the metal is applied to the top of the semiconductor, any oxides that may be present are removed.
- inhomogeneities in the etching depth must also be taken into account. These inhomogeneities vary with the material system used and the type of etching process (dry etching, wet etching), but mainly depend on the uniformity of the epitaxially grown layers. In the case of AlGaAs and sulfuric acid and hydrogen peroxide in aqueous solution as a wet chemical etching solution, typical inhomogeneities deviate from
- the component is therefore provided with a thick, homogeneous and highly n-doped semiconductor layer as a spacer layer 30. With this thick spacer layer 30, tolerances of the etching depth are acceptable; the layer also serves as a common low-resistance contact layer for laser and photodetector.
- An n-doped spacer layer adjacent to the photodetector as in the component according to the invention has various advantages.
- Parasitic light absorption by free charge carriers is usually lower in n-type doped semiconductor material than in p-type doped (at least for the majority of commonly used semiconductor materials).
- the optical absorption in p-doped material is approximately a factor of 2.5 to 3 higher than in n-doped material of the same dopant concentration.
- Another advantage of using an n-doped spacer layer adjacent to the photodetector is the correspondingly lower ohmic resistance that is achieved with n-type semiconductor material compared to p-type material.
- the DBR grating is placed on a p + substrate, preferably using a Buffer layer that is made at low temperature grew.
- a conventional npn bipolar phototransistor based on floating potential and graded energy band gap (HBPT) can be used as the photodetector, with an additional voltage being applied to the photodetector.
- This component can be grown on an n-type substrate.
- a double diode structure with a common anode (npn) or a common tunnel contact (npp + n + np) can also be used as a detector, the two photodiodes having different absorption properties for compensation purposes.
- An internal or external superimposition of the photocurrents thus makes it possible to increase the contrast ratio if the detecting layer (25) of the first photodiode and the detecting layer of the second photodiode lies in the oscillation node of the standing wave and both photocurrents are subtracted from one another.
- FIG. 3 shows an equivalent circuit diagram for a basic structure of the component according to the invention with an integrated pin photodetector corresponding to FIG. 1 or 2.
- the upper part of this diagram in FIG. 3 corresponds to the intrinsic laser impedance, which is determined primarily by the ohmic laser resistance R A when the laser is operating in parallel with the effective laser capacitance C.
- the lower part of the diagram shows the capacitance C D of the photodetector parallel to the current source i D for the photocurrent.
- the common n-contact has a series resistance R ⁇ , which is determined by the lateral ohmic resistance in the thick n-doped spacer layer 30.
- the total laser impedance (R L + R A ) / (C L + R T ) is a very important variable that is parallel to the capacities of a driver circuit or a modular one Construction occurs and should be as small as possible to allow the use of inexpensive laser driver circuits.
- the relationship R T (C L + R ⁇ ) / (R__ + R A ) reflects the portion of the laser modulation voltage (parasitic AC voltage at node 110) that is also parasitically applied to the photodetector. If a photodetector with a strongly voltage-dependent sensitivity is used, such as a phototransistor, a small value R T and high applied photodetector voltages are preferred.
- ⁇ coup R T C D.
- f 1 / (2 ⁇ ⁇ coup )
- approximately half of the parasitic AC voltage at node 110 is coupled into the resistor R D + R M via the photodetector capacitance, to be precise superimposed on the photocurrent signal.
- ⁇ D the voltage drop caused by the photocurrent through the resistors R D + R must still be large compared to said parasitic AC voltage in order to minimize crosstalk. Therefore, the lateral resistance R T for generating good modulation properties of the laser and good high-frequency properties of the photodetector signal should be as low as possible, even if a high-quality pin photodiode is used as the photodetector.
- the optical thickness of the photodetector area including the thick spacer layer in comparison to the laser wavelength is also an important parameter. It determines whether the
- Photodetector in the resonator resonantly influences the laser intensity or not.
- Any photodetector can have a thin absorption layer at a specific location within the standing wave pattern of coherent light.
- a first improvement in the detection sensitivity can be achieved by only detecting the maximum of the intensity distribution. This reinforcement can be achieved by means of ⁇ u> t DO ⁇ 1
- the pin photodetector comprises a p-doped region 125, an intrinsically conductive doped layer 130, with which the photodetector capacity is reduced, and an n-doped layer 150.
- the absorbing layer 41 is highly n-type doped and embedded in highly n-type layers 135 and 145 in order to reduce the optical absorption. For example, in order to reduce the optical absorption by more than a factor of 3, a dopant concentration of more than 2xl0 18 cm "3 in InGaAs potential pots with an indium content of a few percent is required.
- the adjacent highly doped layers have an energy band grading which leads to a reduction in the energy band gap and thus in the direction to the intrinsically doped layer 130 to a reduction 5 leads to the difference between the valence band and the Fermi level
- asymmetrical barriers can be used for the thin absorbent layer 140, with a lower barrier height towards the layer 135, as shown in FIG.
- Another possibility is to change the electron density in the thin absorbent layer 140 by applying a photodetector voltage such that the depletion zone extends into the absorbent layer. In this way, the degree of absorption can be modulated by the applied voltage.
- the modulation depth and the DC bias can be changed by suitably adapting the dopant concentration and the thickness of layer 135 and layer 130.
Abstract
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Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001557129A JP2003522421A (ja) | 2000-02-02 | 2001-01-30 | モノリシックに集積された光検出器を有するvcsel |
DE50106786T DE50106786D1 (de) | 2000-02-02 | 2001-01-30 | Vcsel mit monolithisch integriertem photodetektor |
EP01913546A EP1256151B1 (de) | 2000-02-02 | 2001-01-30 | Vcsel mit monolithisch integriertem photodetektor |
US10/211,102 US6717972B2 (en) | 2000-02-02 | 2002-08-02 | VCSEL with monolithically integrated photodetector |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE10004398.4 | 2000-02-02 | ||
DE10004398A DE10004398A1 (de) | 2000-02-02 | 2000-02-02 | VCSEL mit monolithisch integriertem Photodetektor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US10/211,102 Continuation US6717972B2 (en) | 2000-02-02 | 2002-08-02 | VCSEL with monolithically integrated photodetector |
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WO2001057977A1 true WO2001057977A1 (de) | 2001-08-09 |
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PCT/DE2001/000352 WO2001057977A1 (de) | 2000-02-02 | 2001-01-30 | Vcsel mit monolithisch integriertem photodetektor |
Country Status (5)
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US (1) | US6717972B2 (de) |
EP (1) | EP1256151B1 (de) |
JP (1) | JP2003522421A (de) |
DE (2) | DE10004398A1 (de) |
WO (1) | WO2001057977A1 (de) |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0565374A1 (de) * | 1992-04-10 | 1993-10-13 | Nec Corporation | Elektrophotonische Vorrichtung mit vertikalen Übertragung nach der Oberfläche |
US5606572A (en) * | 1994-03-24 | 1997-02-25 | Vixel Corporation | Integration of laser with photodiode for feedback control |
EP0899836A1 (de) * | 1997-08-27 | 1999-03-03 | Xerox Corporation | Halbleiterlaservorrichtung |
US5892786A (en) * | 1997-03-26 | 1999-04-06 | The United States Of America As Represented By The Secretary Of The Air Force | Output control of vertical microcavity light emitting device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5136603A (en) * | 1991-04-29 | 1992-08-04 | At&T Bell Laboratories | Self-monitoring semiconductor laser device |
US5742630A (en) * | 1996-07-01 | 1998-04-21 | Motorola, Inc. | VCSEL with integrated pin diode |
US5757837A (en) * | 1996-10-16 | 1998-05-26 | The Regents Of The University Of California | Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same |
US6026108A (en) * | 1996-10-16 | 2000-02-15 | The Regents Of The University Of California | Vertical-cavity surface-emitting laser with an intracavity quantum-well optical absorber |
DE19807783A1 (de) * | 1998-02-18 | 1999-09-02 | Siemens Ag | Bauelement mit einem Lichtsender und einem Lichtempfänger |
-
2000
- 2000-02-02 DE DE10004398A patent/DE10004398A1/de not_active Withdrawn
-
2001
- 2001-01-30 JP JP2001557129A patent/JP2003522421A/ja active Pending
- 2001-01-30 DE DE50106786T patent/DE50106786D1/de not_active Expired - Lifetime
- 2001-01-30 WO PCT/DE2001/000352 patent/WO2001057977A1/de active IP Right Grant
- 2001-01-30 EP EP01913546A patent/EP1256151B1/de not_active Expired - Lifetime
-
2002
- 2002-08-02 US US10/211,102 patent/US6717972B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0565374A1 (de) * | 1992-04-10 | 1993-10-13 | Nec Corporation | Elektrophotonische Vorrichtung mit vertikalen Übertragung nach der Oberfläche |
US5606572A (en) * | 1994-03-24 | 1997-02-25 | Vixel Corporation | Integration of laser with photodiode for feedback control |
US5892786A (en) * | 1997-03-26 | 1999-04-06 | The United States Of America As Represented By The Secretary Of The Air Force | Output control of vertical microcavity light emitting device |
EP0899836A1 (de) * | 1997-08-27 | 1999-03-03 | Xerox Corporation | Halbleiterlaservorrichtung |
Non-Patent Citations (1)
Title |
---|
ORTIZ G G ET AL: "MONOLITHIC INTEGRATION OF IN0.2GA0.8AS VERTICAL-CAVITY SURFACE- EMITTING LASERS WITH RESONANCE-ENHANCED QUANTUM WELL PHOTODETECTORS", ELECTRONICS LETTERS,IEE STEVENAGE,GB, vol. 32, no. 13, 20 June 1996 (1996-06-20), pages 1205 - 1207, XP000599193, ISSN: 0013-5194 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004021536A1 (en) * | 2002-08-28 | 2004-03-11 | Epicrystals Oy | Vertical cavity surface emitting laser comprising a modulator monolithically integrated on top |
JP2006504111A (ja) * | 2002-10-22 | 2006-02-02 | ユニヴァーシティー カレッジ カーディフ コンサルタンツ リミテッド | 半導体光学装置 |
US7248800B2 (en) | 2003-05-30 | 2007-07-24 | Canon Kabushiki Kaisha | Optical receiver, optical transmitter and optical transceiver |
US7509052B2 (en) | 2003-05-30 | 2009-03-24 | Kabushiki Kaisha Toshiba | Optical receiver, optical transmitter and optical transceiver |
Also Published As
Publication number | Publication date |
---|---|
US20030021322A1 (en) | 2003-01-30 |
US6717972B2 (en) | 2004-04-06 |
EP1256151B1 (de) | 2005-07-20 |
JP2003522421A (ja) | 2003-07-22 |
EP1256151A1 (de) | 2002-11-13 |
DE10004398A1 (de) | 2001-08-16 |
DE50106786D1 (de) | 2005-08-25 |
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