WO2001061800A3 - Widely tunable laser - Google Patents

Widely tunable laser Download PDF

Info

Publication number
WO2001061800A3
WO2001061800A3 PCT/US2001/005078 US0105078W WO0161800A3 WO 2001061800 A3 WO2001061800 A3 WO 2001061800A3 US 0105078 W US0105078 W US 0105078W WO 0161800 A3 WO0161800 A3 WO 0161800A3
Authority
WO
WIPO (PCT)
Prior art keywords
optical beam
semiconductor laser
laser chip
pump optical
tunable laser
Prior art date
Application number
PCT/US2001/005078
Other languages
French (fr)
Other versions
WO2001061800A2 (en
Inventor
Vijaysekhar Jayaraman
David Welch
Original Assignee
Gore Enterprise Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gore Enterprise Holdings Inc filed Critical Gore Enterprise Holdings Inc
Priority to EP01912779A priority Critical patent/EP1256150A2/en
Priority to AU2001241525A priority patent/AU2001241525A1/en
Priority to JP2001560487A priority patent/JP2003523637A/en
Publication of WO2001061800A2 publication Critical patent/WO2001061800A2/en
Publication of WO2001061800A3 publication Critical patent/WO2001061800A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42Arrays of surface emitting lasers
    • H01S5/423Arrays of surface emitting lasers having a vertical cavity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041Optical pumping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02251Out-coupling of light using optical fibres
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Abstract

A method and system for generating a widely tunable laser output comprising generating a pump optical beam, providing at least one semiconductor laser chip in the path of the pump optical beam such that the at least one semiconductor laser chip emits a tunable optical beam, and moving the at least one semiconductor laser chip relative to the pump optical beam such that the wavelength of the tunable optical beam is controlled by the location of the semiconductor laser chip upon which the pump optical beam impinges. The semiconductor laser chip(s) may be implemented using vertical-cavity surface-emitting laser(s) (VCSELs) each having a resonance that varies with position.
PCT/US2001/005078 2000-02-18 2001-02-16 Widely tunable laser WO2001061800A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP01912779A EP1256150A2 (en) 2000-02-18 2001-02-16 Widely tunable laser
AU2001241525A AU2001241525A1 (en) 2000-02-18 2001-02-16 Widely tunable laser
JP2001560487A JP2003523637A (en) 2000-02-18 2001-02-16 Wide wavelength tunable laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50663300A 2000-02-18 2000-02-18
US09/506,633 2000-02-18

Publications (2)

Publication Number Publication Date
WO2001061800A2 WO2001061800A2 (en) 2001-08-23
WO2001061800A3 true WO2001061800A3 (en) 2002-01-31

Family

ID=24015381

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/005078 WO2001061800A2 (en) 2000-02-18 2001-02-16 Widely tunable laser

Country Status (4)

Country Link
EP (1) EP1256150A2 (en)
JP (1) JP2003523637A (en)
AU (1) AU2001241525A1 (en)
WO (1) WO2001061800A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6845114B2 (en) * 2002-10-16 2005-01-18 Eastman Kodak Company Organic laser that is attachable to an external pump beam light source
EP3791450A1 (en) 2018-05-11 2021-03-17 Excelitas Technologies Corp. Optically pumped tunable vcsel employing geometric isolation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994015386A1 (en) * 1992-12-22 1994-07-07 Micracor, Inc. Multi-element optically pumped external cavity laser system
US5784183A (en) * 1994-02-14 1998-07-21 Hitachi, Ltd. Semiconductor optical device and method for fabricating the same
WO1999012235A1 (en) * 1997-09-05 1999-03-11 Micron Optics, Inc. Tunable fiber fabry-perot surface-emitting lasers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994015386A1 (en) * 1992-12-22 1994-07-07 Micracor, Inc. Multi-element optically pumped external cavity laser system
US5784183A (en) * 1994-02-14 1998-07-21 Hitachi, Ltd. Semiconductor optical device and method for fabricating the same
WO1999012235A1 (en) * 1997-09-05 1999-03-11 Micron Optics, Inc. Tunable fiber fabry-perot surface-emitting lasers

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
FIORE A ET AL: "POSTGROWTH TUNING OF SEMICONDUCTOR VERTICAL CAVITIES FOR MULTIPLE-WAVELENGTH LASER ARRAYS", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE INC. NEW YORK, US, vol. 35, no. 4, April 1999 (1999-04-01), pages 616 - 622, XP000850971, ISSN: 0018-9197 *
PELLANDINI P ET AL: "DUAL-WAVELENGTH LASER EMISSION FRON A COUPLED SEMICONDUCTOR MICROCAVITY", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 71, no. 7, 18 August 1997 (1997-08-18), pages 864 - 866, XP000720053, ISSN: 0003-6951 *
VAKHSHOORI D ET AL: "2 mW CW singlemode operation of a tunable 1550 nm vertical cavity surface emitting laser with 50 nm tuning range", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 35, no. 11, 27 May 1999 (1999-05-27), pages 900 - 901, XP006012234, ISSN: 0013-5194 *

Also Published As

Publication number Publication date
AU2001241525A1 (en) 2001-08-27
JP2003523637A (en) 2003-08-05
WO2001061800A2 (en) 2001-08-23
EP1256150A2 (en) 2002-11-13

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