WO2001063708A3 - Vertical cavity apparatus with tunnel junction - Google Patents

Vertical cavity apparatus with tunnel junction Download PDF

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Publication number
WO2001063708A3
WO2001063708A3 PCT/US2001/006163 US0106163W WO0163708A3 WO 2001063708 A3 WO2001063708 A3 WO 2001063708A3 US 0106163 W US0106163 W US 0106163W WO 0163708 A3 WO0163708 A3 WO 0163708A3
Authority
WO
WIPO (PCT)
Prior art keywords
tunnel junction
vertical cavity
cavity apparatus
mirrors
substrate
Prior art date
Application number
PCT/US2001/006163
Other languages
French (fr)
Other versions
WO2001063708A2 (en
Inventor
Julien Boucart
Constance Chang-Hasnain
Mitch Jansen
Rashit Nabiev
Wupen Yuen
Original Assignee
Bandwidth9 Inc
Julien Boucart
Chang Hasnain Constance
Mitch Jansen
Rashit Nabiev
Wupen Yuen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/603,140 external-priority patent/US6487230B1/en
Priority claimed from US09/603,296 external-priority patent/US6535541B1/en
Priority claimed from US09/603,239 external-priority patent/US6487231B1/en
Priority claimed from US09/602,454 external-priority patent/US6493372B1/en
Priority claimed from US09/603,242 external-priority patent/US6493373B1/en
Priority claimed from US09/602,817 external-priority patent/US6490311B1/en
Priority claimed from US09/602,444 external-priority patent/US6493371B1/en
Priority claimed from US09/603,227 external-priority patent/US6760357B1/en
Application filed by Bandwidth9 Inc, Julien Boucart, Chang Hasnain Constance, Mitch Jansen, Rashit Nabiev, Wupen Yuen filed Critical Bandwidth9 Inc
Priority to AU2001239892A priority Critical patent/AU2001239892A1/en
Publication of WO2001063708A2 publication Critical patent/WO2001063708A2/en
Publication of WO2001063708A3 publication Critical patent/WO2001063708A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H01S5/426—Vertically stacked cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18397—Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Abstract

A vertical cavity apparatus includes a first mirror, a substrate and a second mirror coupled to the substrate. At least a first and a second active regions are each positioned between the first and second mirrors. At least a first oxide layer is positioned between the first and second mirrors. At least tunnel junction is positioned between the first and second mirrors.
PCT/US2001/006163 2000-02-24 2001-02-26 Vertical cavity apparatus with tunnel junction WO2001063708A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001239892A AU2001239892A1 (en) 2000-02-24 2001-02-26 Vertical cavity apparatus with tunnel junction

Applications Claiming Priority (18)

Application Number Priority Date Filing Date Title
US18470600P 2000-02-24 2000-02-24
US60/184,706 2000-02-24
US09/603,140 US6487230B1 (en) 1998-04-14 2000-06-23 Vertical cavity apparatus with tunnel junction
US09/603,239 2000-06-23
US09/603,296 US6535541B1 (en) 1998-04-14 2000-06-23 Vertical cavity apparatus with tunnel junction
US09/603,242 2000-06-23
US09/603,227 2000-06-23
US09/602,817 2000-06-23
US09/602,454 2000-06-23
US09/603,296 2000-06-23
US09/603,239 US6487231B1 (en) 1998-04-14 2000-06-23 Vertical cavity apparatus with tunnel junction
US09/603,140 2000-06-23
US09/602,454 US6493372B1 (en) 1998-04-14 2000-06-23 Vertical cavity apparatus with tunnel junction
US09/603,242 US6493373B1 (en) 1998-04-14 2000-06-23 Vertical cavity apparatus with tunnel junction
US09/602,817 US6490311B1 (en) 1998-04-14 2000-06-23 Vertical cavity apparatus with tunnel junction
US09/602,444 US6493371B1 (en) 1998-04-14 2000-06-23 Vertical cavity apparatus with tunnel junction
US09/602,444 2000-06-23
US09/603,227 US6760357B1 (en) 1998-04-14 2000-06-23 Vertical cavity apparatus with tunnel junction

Publications (2)

Publication Number Publication Date
WO2001063708A2 WO2001063708A2 (en) 2001-08-30
WO2001063708A3 true WO2001063708A3 (en) 2002-02-07

Family

ID=27578645

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/006163 WO2001063708A2 (en) 2000-02-24 2001-02-26 Vertical cavity apparatus with tunnel junction

Country Status (2)

Country Link
AU (1) AU2001239892A1 (en)
WO (1) WO2001063708A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6888873B2 (en) 2002-02-21 2005-05-03 Finisar Corporation Long wavelength VCSEL bottom mirror
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
DE102006010728A1 (en) * 2005-12-05 2007-06-06 Osram Opto Semiconductors Gmbh Semiconductor component and laser device
DE102007011804A1 (en) * 2007-01-25 2008-07-31 Osram Opto Semiconductors Gmbh Measuring arrangement and measuring system
JP5355276B2 (en) * 2009-07-28 2013-11-27 キヤノン株式会社 Surface emitting laser
US9742153B1 (en) 2016-02-23 2017-08-22 Lumentum Operations Llc Compact emitter design for a vertical-cavity surface-emitting laser

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
JPH05235473A (en) * 1992-02-26 1993-09-10 Nippon Telegr & Teleph Corp <Ntt> Surface light emitting device and fabrication thereof
US5446752A (en) * 1993-09-21 1995-08-29 Motorola VCSEL with current blocking layer offset
JPH0878773A (en) * 1994-09-05 1996-03-22 Gijutsu Kenkyu Kumiai Shinjoho Shiyori Kaihatsu Kiko Surface-emitting semiconductor laser
WO1998007218A1 (en) * 1996-08-09 1998-02-19 W.L. Gore & Associates, Inc. Vertical cavity surface emitting laser with tunnel junction
EP0869593A1 (en) * 1997-04-03 1998-10-07 Alcatel Surface emitting semiconductor laser
US5936266A (en) * 1997-07-22 1999-08-10 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods with tunnel contact hole sources

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
JPH05235473A (en) * 1992-02-26 1993-09-10 Nippon Telegr & Teleph Corp <Ntt> Surface light emitting device and fabrication thereof
US5446752A (en) * 1993-09-21 1995-08-29 Motorola VCSEL with current blocking layer offset
JPH0878773A (en) * 1994-09-05 1996-03-22 Gijutsu Kenkyu Kumiai Shinjoho Shiyori Kaihatsu Kiko Surface-emitting semiconductor laser
WO1998007218A1 (en) * 1996-08-09 1998-02-19 W.L. Gore & Associates, Inc. Vertical cavity surface emitting laser with tunnel junction
EP0869593A1 (en) * 1997-04-03 1998-10-07 Alcatel Surface emitting semiconductor laser
US5936266A (en) * 1997-07-22 1999-08-10 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods with tunnel contact hole sources

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
GIUDICE G E ET AL: "SINGLE-MODE OPERATION FROM AN EXTERNAL CAVITY CONTROLLED VERTICAL-CAVITY SURFACE-EMITTING LASER", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 11, no. 12, December 1999 (1999-12-01), pages 1545 - 1547, XP000924491, ISSN: 1041-1135 *
LARSON ET AL: "Micromachined tunable vertical-cavity surface-emitting lasers", ELECTRON DEVICES MEETING, 1996., INTERNATIONAL SAN FRANCISCO, CA, USA 8-11 DEC. 1996, NEW YORK, NY, USA,IEEE, US, 8 December 1996 (1996-12-08), pages 405 - 408, XP010207572, ISBN: 0-7803-3393-4 *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 691 (E - 1479) 17 December 1993 (1993-12-17) *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 07 31 July 1996 (1996-07-31) *

Also Published As

Publication number Publication date
WO2001063708A2 (en) 2001-08-30
AU2001239892A1 (en) 2001-09-03

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