WO2001071765A3 - Plasma reactor with overhead rf electrode tuned to the plasma - Google Patents

Plasma reactor with overhead rf electrode tuned to the plasma Download PDF

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Publication number
WO2001071765A3
WO2001071765A3 PCT/US2001/008882 US0108882W WO0171765A3 WO 2001071765 A3 WO2001071765 A3 WO 2001071765A3 US 0108882 W US0108882 W US 0108882W WO 0171765 A3 WO0171765 A3 WO 0171765A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
electrode
overhead
reactor
electrode tuned
Prior art date
Application number
PCT/US2001/008882
Other languages
French (fr)
Other versions
WO2001071765A2 (en
Inventor
Daniel J Hoffman
Gerald Zheyao Yin
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2001569847A priority Critical patent/JP2003528457A/en
Priority to EP01918853A priority patent/EP1269511B1/en
Priority to DE60136692T priority patent/DE60136692D1/en
Publication of WO2001071765A2 publication Critical patent/WO2001071765A2/en
Publication of WO2001071765A3 publication Critical patent/WO2001071765A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

Abstract

In accordance with one aspect of the invention, a plasma reactor has a capacitive electrode driven by an RF power source, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to provide an electrode plasma resonance supportive of a broad process window within which the plasma may be sustained.
PCT/US2001/008882 2000-03-17 2001-03-19 Plasma reactor with overhead rf electrode tuned to the plasma WO2001071765A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001569847A JP2003528457A (en) 2000-03-17 2001-03-19 Plasma reactor with overhead RF electrode tuned to plasma
EP01918853A EP1269511B1 (en) 2000-03-17 2001-03-19 Plasma reactor with overhead rf electrode tuned to the plasma
DE60136692T DE60136692D1 (en) 2000-03-17 2001-03-19 EN, UPPER RF ELECTRODE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/527,342 2000-03-17
US09/527,342 US6528751B1 (en) 2000-03-17 2000-03-17 Plasma reactor with overhead RF electrode tuned to the plasma

Publications (2)

Publication Number Publication Date
WO2001071765A2 WO2001071765A2 (en) 2001-09-27
WO2001071765A3 true WO2001071765A3 (en) 2002-01-31

Family

ID=24101080

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/008882 WO2001071765A2 (en) 2000-03-17 2001-03-19 Plasma reactor with overhead rf electrode tuned to the plasma

Country Status (6)

Country Link
US (2) US6528751B1 (en)
EP (1) EP1269511B1 (en)
JP (1) JP2003528457A (en)
KR (1) KR100797926B1 (en)
DE (1) DE60136692D1 (en)
WO (1) WO2001071765A2 (en)

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