WO2001076771A3 - Low temperature oxidizing method of making a layered superlattice material - Google Patents

Low temperature oxidizing method of making a layered superlattice material Download PDF

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Publication number
WO2001076771A3
WO2001076771A3 PCT/US2001/009634 US0109634W WO0176771A3 WO 2001076771 A3 WO2001076771 A3 WO 2001076771A3 US 0109634 W US0109634 W US 0109634W WO 0176771 A3 WO0176771 A3 WO 0176771A3
Authority
WO
WIPO (PCT)
Prior art keywords
annealing
thin film
range
oxidizing agent
strong oxidizing
Prior art date
Application number
PCT/US2001/009634
Other languages
French (fr)
Other versions
WO2001076771A2 (en
Inventor
Vikram Joshi
Jolanta Celinska
Narayan Solayappan
Larry D Mcmillan
De Araujo Carlos A Paz
Koji Arita
Original Assignee
Symetrix Corp
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Symetrix Corp, Matsushita Electric Ind Co Ltd filed Critical Symetrix Corp
Publication of WO2001076771A2 publication Critical patent/WO2001076771A2/en
Publication of WO2001076771A3 publication Critical patent/WO2001076771A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Abstract

A thin film of precursor for forming a layered superlattice material (124, 226, 624) is applied (324, 424) to an integrated circuit substrate (122, 224, 500, 622), then a strong oxidizing agent is applied (328, 330, 426, 428) at low temperature in a range of from 100° C to 300° C to the precursor thin film, thereby forming a metal oxide thin film. The strong oxidizing agent may be liquid or gaseous. An example of a liquid strong oxidizing agent is hydrogen peroxide. An example of a gaseous strong oxidizing agent is ozone. The metal oxide thin film is crystallized by annealing (336, 338, 432, 434) at elevated temperature in a range of from 500° C to 700° C, preferably not exceeding 650° C, for a time period in a range of from 30 minutes to two hours. Annealing is conducted in an oxygen-containing atmosphere, preferably including water vapor. Treatment (332, 430) by ultraviolet (UV) radiation may precede annealing. RTP in a range of from 500° C to 700° C may precede annealing.
PCT/US2001/009634 2000-04-07 2001-03-22 Low temperature oxidizing method of making a layered superlattice material WO2001076771A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/544,697 US6582972B1 (en) 2000-04-07 2000-04-07 Low temperature oxidizing method of making a layered superlattice material
US09/544,697 2000-04-07

Publications (2)

Publication Number Publication Date
WO2001076771A2 WO2001076771A2 (en) 2001-10-18
WO2001076771A3 true WO2001076771A3 (en) 2002-02-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/009634 WO2001076771A2 (en) 2000-04-07 2001-03-22 Low temperature oxidizing method of making a layered superlattice material

Country Status (3)

Country Link
US (1) US6582972B1 (en)
TW (1) TW498453B (en)
WO (1) WO2001076771A2 (en)

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JP2003031117A (en) * 2001-07-10 2003-01-31 Nec Corp Manufacturing method and manufacturing device of dielectric layer
US7033437B2 (en) * 2003-06-26 2006-04-25 Rj Mears, Llc Method for making semiconductor device including band-engineered superlattice
US6830964B1 (en) * 2003-06-26 2004-12-14 Rj Mears, Llc Method for making semiconductor device including band-engineered superlattice
JP4650885B2 (en) * 2004-09-07 2011-03-16 株式会社神戸製鋼所 Method for forming porous film and porous film formed by the method
US20060169592A1 (en) * 2005-01-31 2006-08-03 Hewlett-Packard Development Company, L.P. Periodic layered structures and methods therefor
WO2013086068A1 (en) * 2011-12-06 2013-06-13 University Of North Texas Direct graphene growth on metal oxides by molecular beam epitaxy
WO2019014776A1 (en) * 2017-07-20 2019-01-24 Curtis Berlinguette Photodeposition of metal oxides for electrochromic devices
CN115613114A (en) * 2022-12-02 2023-01-17 杭州众能光电科技有限公司 Photo-thermal electricity and atmosphere synergistic thin film annealing equipment and annealing process

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JPH05195232A (en) * 1992-01-14 1993-08-03 Nippon Sheet Glass Co Ltd Method for depositing metal oxide film
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US5618761A (en) * 1994-09-16 1997-04-08 Kabushiki Kaisha Toshiba Method of manufacturing a perovskite thin film dielectric
US5728603A (en) * 1994-11-28 1998-03-17 Northern Telecom Limited Method of forming a crystalline ferroelectric dielectric material for an integrated circuit
JPH10182300A (en) * 1996-12-18 1998-07-07 Sony Corp Mocvd method of dielectric thin film and its annealing method
JPH11228113A (en) * 1998-02-04 1999-08-24 Teikoku Chem Ind Corp Ltd Coating solution and formation of thin metal oxide film using same
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Also Published As

Publication number Publication date
TW498453B (en) 2002-08-11
US6582972B1 (en) 2003-06-24
WO2001076771A2 (en) 2001-10-18

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