WO2001078093A3 - Distributed capacitor - Google Patents

Distributed capacitor Download PDF

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Publication number
WO2001078093A3
WO2001078093A3 PCT/CA2001/000484 CA0100484W WO0178093A3 WO 2001078093 A3 WO2001078093 A3 WO 2001078093A3 CA 0100484 W CA0100484 W CA 0100484W WO 0178093 A3 WO0178093 A3 WO 0178093A3
Authority
WO
WIPO (PCT)
Prior art keywords
layers
electrode
integrated circuit
opening
circuit
Prior art date
Application number
PCT/CA2001/000484
Other languages
French (fr)
Other versions
WO2001078093A2 (en
Inventor
Michael Man-Kuen Watt
Original Assignee
Gennum Corp
Watt Michael Man Kuen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gennum Corp, Watt Michael Man Kuen filed Critical Gennum Corp
Priority to DE60132660T priority Critical patent/DE60132660T2/en
Priority to CA002443551A priority patent/CA2443551A1/en
Priority to EP01925235A priority patent/EP1273017B1/en
Priority to AU2001252058A priority patent/AU2001252058A1/en
Publication of WO2001078093A2 publication Critical patent/WO2001078093A2/en
Publication of WO2001078093A3 publication Critical patent/WO2001078093A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

A multi-layer distributed capacitor structure comprises a bottom electrode layer overlying a monolithic substrate, intermediate pairs of layers of film electrode and dielectric material overlying the bottom electrode, and a top pair of layers of a film electrode and dielectric material overlying the intermediate pairs. The structure contains multiple openings, each opening extending from the top pair of layers through the intermediate layers and optionally through said bottom electrode. Each electrode layer also extends laterally beyond and around the entire periphery of the layers positioned above such that the electrode layers bordering on each opening has edges running along the perimeter of the opening which are left exposed for electrical connection to a circuit using wire interconnects. Accordingly, electrode layers can be selectively accessed through openings to provide local decoupling capacitance to the power supply and ground nodes of an integrated circuit flip-chip mounted on the top surface of the structure. Since local electrical connections can be made between the electrode layers within each opening and the integrated circuit logic gates, lead inductance and equivalent series resistance is significantly reduced, effecting improved switching noise reduction. Further, the structure can be configured as a power distribution circuit for an integrated circuit by directly connecting the electrode layers of structure to a circuit power supply and ground through integrated circuit package leads. Since the electrode layers of structure represent substantially planar power and ground planes, this arrangement results in additional reductions in inductance and resistance of the electrical path.
PCT/CA2001/000484 2000-04-06 2001-04-06 Distributed capacitor WO2001078093A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE60132660T DE60132660T2 (en) 2000-04-06 2001-04-06 DISTRIBUTED CAPACITY
CA002443551A CA2443551A1 (en) 2000-04-06 2001-04-06 Distributed capacitor
EP01925235A EP1273017B1 (en) 2000-04-06 2001-04-06 Distributed capacitor
AU2001252058A AU2001252058A1 (en) 2000-04-06 2001-04-06 Distributed capacitor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/544,550 2000-04-06
US09/544,550 US6411494B1 (en) 2000-04-06 2000-04-06 Distributed capacitor

Publications (2)

Publication Number Publication Date
WO2001078093A2 WO2001078093A2 (en) 2001-10-18
WO2001078093A3 true WO2001078093A3 (en) 2002-03-28

Family

ID=24172631

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2001/000484 WO2001078093A2 (en) 2000-04-06 2001-04-06 Distributed capacitor

Country Status (7)

Country Link
US (1) US6411494B1 (en)
EP (1) EP1273017B1 (en)
AT (1) ATE385341T1 (en)
AU (1) AU2001252058A1 (en)
CA (1) CA2443551A1 (en)
DE (1) DE60132660T2 (en)
WO (1) WO2001078093A2 (en)

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US9099861B2 (en) * 2013-05-23 2015-08-04 Inpaq Technology Co., Ltd. Over-voltage protection device and method for preparing the same
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US20160181233A1 (en) * 2014-12-23 2016-06-23 Qualcomm Incorporated Metal-insulator-metal (mim) capacitors arranged in a pattern to reduce inductance, and related methods
JP2016162904A (en) * 2015-03-03 2016-09-05 ルネサスエレクトロニクス株式会社 Semiconductor device manufacturing method
US9998100B2 (en) 2015-08-28 2018-06-12 Ampere Computing Llc Package programmable decoupling capacitor array
US9767962B2 (en) * 2016-01-22 2017-09-19 Micron Technology, Inc. Apparatuses, multi-chip modules and capacitive chips
JP6737118B2 (en) 2016-10-11 2020-08-05 Tdk株式会社 Thin film capacitors
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US10886219B2 (en) * 2017-01-18 2021-01-05 Tdk Corporation Electronic component mounting package
US20210020587A1 (en) * 2019-06-11 2021-01-21 Skyworks Solutions, Inc. Moisture barrier for metal insulator metal capacitors and integrated circuit having the same
CN112652619B (en) * 2020-12-22 2022-08-09 长江存储科技有限责任公司 Gasket and manufacturing method thereof, and packaging structure and manufacturing method thereof
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Also Published As

Publication number Publication date
US6411494B1 (en) 2002-06-25
EP1273017A2 (en) 2003-01-08
AU2001252058A1 (en) 2001-10-23
WO2001078093A2 (en) 2001-10-18
EP1273017B1 (en) 2008-01-30
DE60132660T2 (en) 2009-01-08
ATE385341T1 (en) 2008-02-15
DE60132660D1 (en) 2008-03-20
CA2443551A1 (en) 2001-10-18

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