WO2001080304A3 - Improved test structures and methods for inspecting and utilizing the same - Google Patents

Improved test structures and methods for inspecting and utilizing the same Download PDF

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Publication number
WO2001080304A3
WO2001080304A3 PCT/US2000/034086 US0034086W WO0180304A3 WO 2001080304 A3 WO2001080304 A3 WO 2001080304A3 US 0034086 W US0034086 W US 0034086W WO 0180304 A3 WO0180304 A3 WO 0180304A3
Authority
WO
WIPO (PCT)
Prior art keywords
test structures
defects
scanning area
scan
sample
Prior art date
Application number
PCT/US2000/034086
Other languages
French (fr)
Other versions
WO2001080304A2 (en
WO2001080304A8 (en
Inventor
Akella V S Satya
Gustavo A Pinto
David L Adler
Robert Thomas Long
Neil Richardson
Kurt H Weiner
David J Walker
Lynda C Mantalas
Original Assignee
Kla Tencor Corp
Akella V S Satya
Gustavo A Pinto
David L Adler
Robert Thomas Long
Neil Richardson
Kurt H Weiner
David J Walker
Lynda C Mantalas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/648,093 external-priority patent/US6633174B1/en
Application filed by Kla Tencor Corp, Akella V S Satya, Gustavo A Pinto, David L Adler, Robert Thomas Long, Neil Richardson, Kurt H Weiner, David J Walker, Lynda C Mantalas filed Critical Kla Tencor Corp
Priority to AU2001225804A priority Critical patent/AU2001225804A1/en
Priority to EP00989275A priority patent/EP1328971A2/en
Priority to JP2001577600A priority patent/JP5108193B2/en
Publication of WO2001080304A2 publication Critical patent/WO2001080304A2/en
Publication of WO2001080304A8 publication Critical patent/WO2001080304A8/en
Publication of WO2001080304A3 publication Critical patent/WO2001080304A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Tests Of Electronic Circuits (AREA)

Abstract

A sample is inspected by moving to a first field associated with a first group of test structures, which are partially within the first field, which is scanned to determine whether there are any defects present. If defects are present a specific defect location is determined by repeatedly stepping to areas and scanning such areas within the first group of test structures. In a second method, a sample is scanned in a first direction and in a second direction at an angle to the first direction with at least one particle beam. The number of defects per area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. A semiconductor die includes test structures located entirely within a scanning area and only partially within the scanning area. The test structures are arranged so that a scan of the scanning area results in detection of defects outside of the scanning area.
PCT/US2000/034086 2000-04-18 2000-12-14 Improved test structures and methods for inspecting and utilizing the same WO2001080304A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2001225804A AU2001225804A1 (en) 2000-04-18 2000-12-14 Improved test structures and methods for inspecting and utilizing the same
EP00989275A EP1328971A2 (en) 2000-04-18 2000-12-14 Improved test structures and methods for inspecting and utilizing the same
JP2001577600A JP5108193B2 (en) 2000-04-18 2000-12-14 Improved test structure inspection method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US19846400P 2000-04-18 2000-04-18
US60/198,464 2000-04-18
US09/648,093 2000-08-25
US09/648,093 US6633174B1 (en) 1999-12-14 2000-08-25 Stepper type test structures and methods for inspection of semiconductor integrated circuits

Publications (3)

Publication Number Publication Date
WO2001080304A2 WO2001080304A2 (en) 2001-10-25
WO2001080304A8 WO2001080304A8 (en) 2001-12-27
WO2001080304A3 true WO2001080304A3 (en) 2003-05-15

Family

ID=26893810

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/034086 WO2001080304A2 (en) 2000-04-18 2000-12-14 Improved test structures and methods for inspecting and utilizing the same

Country Status (4)

Country Link
EP (1) EP1328971A2 (en)
JP (1) JP5108193B2 (en)
AU (1) AU2001225804A1 (en)
WO (1) WO2001080304A2 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7655482B2 (en) 2000-04-18 2010-02-02 Kla-Tencor Chemical mechanical polishing test structures and methods for inspecting the same
JP5238659B2 (en) * 2001-10-17 2013-07-17 ケーエルエー−テンカー コーポレイション Apparatus and method for semiconductor IC defect detection
DE10153763B4 (en) 2001-10-31 2006-09-28 Advanced Micro Devices, Inc., Sunnyvale Monitoring void formation in a damascence process
US7236847B2 (en) 2002-01-16 2007-06-26 Kla-Tencor Technologies Corp. Systems and methods for closed loop defect reduction
US7078690B2 (en) * 2002-02-04 2006-07-18 Applied Materials, Israel, Ltd. Monitoring of contact hole production
US7038224B2 (en) 2002-07-30 2006-05-02 Applied Materials, Israel, Ltd. Contact opening metrology
US7175503B2 (en) 2002-02-04 2007-02-13 Kla-Tencor Technologies Corp. Methods and systems for determining a characteristic of polishing within a zone on a specimen from combined output signals of an eddy current device
US7473911B2 (en) 2002-07-30 2009-01-06 Applied Materials, Israel, Ltd. Specimen current mapper
US7217579B2 (en) * 2002-12-19 2007-05-15 Applied Materials, Israel, Ltd. Voltage contrast test structure
US9002497B2 (en) * 2003-07-03 2015-04-07 Kla-Tencor Technologies Corp. Methods and systems for inspection of wafers and reticles using designer intent data
US6929961B2 (en) 2003-12-10 2005-08-16 Hitachi Global Storage Technologies Netherlands B. V. Dual function array feature for CMP process control and inspection
JP4137065B2 (en) 2005-02-09 2008-08-20 富士通株式会社 Semiconductor device, device forming substrate, wiring connection test method, and semiconductor device manufacturing method
WO2006123281A1 (en) * 2005-05-19 2006-11-23 Koninklijke Philips Electronics N.V. Test structure for combined electrical testing and voltage-contrast inspection
JP4252056B2 (en) 2005-09-27 2009-04-08 富士通マイクロエレクトロニクス株式会社 Semiconductor device contact defect inspection method and semiconductor device to which the inspection method is applied
JP4903469B2 (en) * 2006-03-28 2012-03-28 富士通セミコンダクター株式会社 Defect detection method
JP5353179B2 (en) * 2008-10-22 2013-11-27 ソニー株式会社 Defect correction apparatus and defect correction method
US9311698B2 (en) * 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
TW201611145A (en) * 2014-06-12 2016-03-16 Ｐｄｆ對策公司 Opportunistic placement of IC test strucutres and/or e-beam target pads in areas otherwise used for filler cells, tap cells, decap cells, scribe lines, and/or dummy fill, as well as product IC chips containing same
CN104316813A (en) * 2014-08-11 2015-01-28 上海华虹宏力半导体制造有限公司 Voltage contrast method for determining abnormal short-circuit position
US10930571B2 (en) * 2019-02-01 2021-02-23 Samsung Electronics Co., Ltd. Test structure and evaluation method for semiconductor photo overlay

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4443278A (en) * 1981-05-26 1984-04-17 International Business Machines Corporation Inspection of multilayer ceramic circuit modules by electrical inspection of green specimens
US5159752A (en) * 1989-03-22 1992-11-03 Texas Instruments Incorporated Scanning electron microscope based parametric testing method and apparatus
US5331161A (en) * 1992-03-06 1994-07-19 Iwao Ohdomari Ion irradiation system and method
US5502306A (en) * 1991-05-30 1996-03-26 Kla Instruments Corporation Electron beam inspection system and method
US5578821A (en) * 1992-05-27 1996-11-26 Kla Instruments Corporation Electron beam inspection system and method
EP0818814A2 (en) * 1996-07-12 1998-01-14 Kla Instruments Corp. Overlay alignment measurement of semiconductor wafers
US5736863A (en) * 1996-06-19 1998-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Abatement of electron beam charging distortion during dimensional measurements of integrated circuit patterns with scanning electron microscopy by the utilization of specially designed test structures
US5872018A (en) * 1997-05-05 1999-02-16 Vanguard International Semiconductor Corporation Testchip design for process analysis in sub-micron DRAM fabrication
US5952674A (en) * 1998-03-18 1999-09-14 International Business Machines Corporation Topography monitor
US5959459A (en) * 1996-12-10 1999-09-28 International Business Machines Corporation Defect monitor and method for automated contactless inline wafer inspection

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3229411B2 (en) * 1993-01-11 2001-11-19 株式会社日立製作所 Method of detecting defects in thin film transistor substrate and method of repairing the same
JPH09282349A (en) * 1996-04-17 1997-10-31 Shinko Electric Ind Co Ltd Data convesion processor
JP3070543B2 (en) * 1997-09-19 2000-07-31 日本電気株式会社 Method for manufacturing semiconductor device
JPH11242943A (en) * 1997-12-18 1999-09-07 Nikon Corp Inspection device
JPH11219997A (en) * 1998-02-03 1999-08-10 Hitachi Ltd Electronic device check system and manufacture of electronic device
JP2000081324A (en) * 1998-06-29 2000-03-21 Hitachi Ltd Method and equipment for inspecting defect

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4443278A (en) * 1981-05-26 1984-04-17 International Business Machines Corporation Inspection of multilayer ceramic circuit modules by electrical inspection of green specimens
US5159752A (en) * 1989-03-22 1992-11-03 Texas Instruments Incorporated Scanning electron microscope based parametric testing method and apparatus
US5502306A (en) * 1991-05-30 1996-03-26 Kla Instruments Corporation Electron beam inspection system and method
US5331161A (en) * 1992-03-06 1994-07-19 Iwao Ohdomari Ion irradiation system and method
US5578821A (en) * 1992-05-27 1996-11-26 Kla Instruments Corporation Electron beam inspection system and method
US5736863A (en) * 1996-06-19 1998-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Abatement of electron beam charging distortion during dimensional measurements of integrated circuit patterns with scanning electron microscopy by the utilization of specially designed test structures
EP0818814A2 (en) * 1996-07-12 1998-01-14 Kla Instruments Corp. Overlay alignment measurement of semiconductor wafers
US5959459A (en) * 1996-12-10 1999-09-28 International Business Machines Corporation Defect monitor and method for automated contactless inline wafer inspection
US5872018A (en) * 1997-05-05 1999-02-16 Vanguard International Semiconductor Corporation Testchip design for process analysis in sub-micron DRAM fabrication
US5952674A (en) * 1998-03-18 1999-09-14 International Business Machines Corporation Topography monitor

Also Published As

Publication number Publication date
AU2001225804A1 (en) 2001-10-30
WO2001080304A2 (en) 2001-10-25
WO2001080304A8 (en) 2001-12-27
JP5108193B2 (en) 2012-12-26
EP1328971A2 (en) 2003-07-23
JP2004501505A (en) 2004-01-15

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