WO2001088955A3 - Method of monitoring ion implants by examination of an overlying masking material - Google Patents

Method of monitoring ion implants by examination of an overlying masking material Download PDF

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Publication number
WO2001088955A3
WO2001088955A3 PCT/US2001/015281 US0115281W WO0188955A3 WO 2001088955 A3 WO2001088955 A3 WO 2001088955A3 US 0115281 W US0115281 W US 0115281W WO 0188955 A3 WO0188955 A3 WO 0188955A3
Authority
WO
WIPO (PCT)
Prior art keywords
masking material
examination
optical properties
ion implants
monitoring ion
Prior art date
Application number
PCT/US2001/015281
Other languages
French (fr)
Other versions
WO2001088955A2 (en
Inventor
Carlos Strocchia-Rivera
Original Assignee
Kla Tencor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Inc filed Critical Kla Tencor Inc
Publication of WO2001088955A2 publication Critical patent/WO2001088955A2/en
Publication of WO2001088955A3 publication Critical patent/WO2001088955A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31711—Ion implantation characterised by the area treated patterned using mask

Abstract

A process control method to monitor ion implantation process conditions by measuring (12) the optical properties of a masking material is provided. A patterned masking material may protect underlying regions of a semiconductor substrate from undergoing a chemical or physical change during an ion implantation process. The chemical or physical changes to the masking material during such processing may also cause the optical properties of the material to change. The optical properties of the masking material may be used to determine the concentration (18) of ions implanted into the semiconductor substrate.
PCT/US2001/015281 2000-05-12 2001-05-10 Method of monitoring ion implants by examination of an overlying masking material WO2001088955A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/570,135 2000-05-12
US09/570,135 US6462817B1 (en) 2000-05-12 2000-05-12 Method of monitoring ion implants by examination of an overlying masking material

Publications (2)

Publication Number Publication Date
WO2001088955A2 WO2001088955A2 (en) 2001-11-22
WO2001088955A3 true WO2001088955A3 (en) 2002-03-07

Family

ID=24278389

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/015281 WO2001088955A2 (en) 2000-05-12 2001-05-10 Method of monitoring ion implants by examination of an overlying masking material

Country Status (2)

Country Link
US (1) US6462817B1 (en)
WO (1) WO2001088955A2 (en)

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US20060114478A1 (en) * 2004-11-26 2006-06-01 Applied Materials, Inc. Evaluating effects of tilt angle in ion implantation
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US20060240651A1 (en) * 2005-04-26 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for adjusting ion implant parameters for improved process control
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TWI439684B (en) * 2005-07-06 2014-06-01 Nanometrics Inc Photoluminescence imaging with preferential detection of photoluminescence signals emitted from a specified material layer of a wafer or other workpiece
TWI391645B (en) * 2005-07-06 2013-04-01 Nanometrics Inc Differential wavelength photoluminescence for non-contact measuring of contaminants and defects located below the surface of a wafer or other workpiece
US20070008526A1 (en) * 2005-07-08 2007-01-11 Andrzej Buczkowski Apparatus and method for non-contact assessment of a constituent in semiconductor workpieces
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Also Published As

Publication number Publication date
US6462817B1 (en) 2002-10-08
WO2001088955A2 (en) 2001-11-22

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