WO2002001643A3 - Soft recovery power diode and related method - Google Patents
Soft recovery power diode and related method Download PDFInfo
- Publication number
- WO2002001643A3 WO2002001643A3 PCT/US2001/019990 US0119990W WO0201643A3 WO 2002001643 A3 WO2002001643 A3 WO 2002001643A3 US 0119990 W US0119990 W US 0119990W WO 0201643 A3 WO0201643 A3 WO 0201643A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor layer
- dopant
- related method
- power diode
- recovery power
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000011084 recovery Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 11
- 239000002019 doping agent Substances 0.000 abstract 8
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/927—Different doping levels in different parts of PN junction to produce shaped depletion layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10196362T DE10196362B4 (en) | 2000-06-26 | 2001-06-22 | Power diode with soft turn-off behavior (soft recovery) and related process |
JP2002505688A JP4608181B2 (en) | 2000-06-26 | 2001-06-22 | Soft recovery power diode and related method |
AU2001270086A AU2001270086A1 (en) | 2000-06-26 | 2001-06-22 | Soft recovery power diode and related method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/603,605 | 2000-06-26 | ||
US09/603,605 US6737731B1 (en) | 2000-06-26 | 2000-06-26 | Soft recovery power diode |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002001643A2 WO2002001643A2 (en) | 2002-01-03 |
WO2002001643A3 true WO2002001643A3 (en) | 2002-04-18 |
Family
ID=24416158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/019990 WO2002001643A2 (en) | 2000-06-26 | 2001-06-22 | Soft recovery power diode and related method |
Country Status (7)
Country | Link |
---|---|
US (1) | US6737731B1 (en) |
JP (1) | JP4608181B2 (en) |
CN (1) | CN1211865C (en) |
AU (1) | AU2001270086A1 (en) |
DE (1) | DE10196362B4 (en) |
TW (1) | TW507384B (en) |
WO (1) | WO2002001643A2 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7169634B2 (en) * | 2003-01-15 | 2007-01-30 | Advanced Power Technology, Inc. | Design and fabrication of rugged FRED |
US7199442B2 (en) * | 2004-07-15 | 2007-04-03 | Fairchild Semiconductor Corporation | Schottky diode structure to reduce capacitance and switching losses and method of making same |
DE102004048607A1 (en) * | 2004-10-06 | 2006-04-13 | Robert Bosch Gmbh | Semiconductor device |
JP4843253B2 (en) * | 2005-05-23 | 2011-12-21 | 株式会社東芝 | Power semiconductor device |
US7728409B2 (en) * | 2005-11-10 | 2010-06-01 | Fuji Electric Device Technology Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP2009049045A (en) * | 2007-08-13 | 2009-03-05 | Kansai Electric Power Co Inc:The | Soft recovery diode |
JP5309360B2 (en) * | 2008-07-31 | 2013-10-09 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
US8933506B2 (en) * | 2011-01-31 | 2015-01-13 | Alpha And Omega Semiconductor Incorporated | Diode structures with controlled injection efficiency for fast switching |
CN102832121B (en) * | 2011-06-17 | 2015-04-01 | 中国科学院微电子研究所 | Manufacture method of fast recovery diode |
CN103311278B (en) * | 2012-03-11 | 2016-03-02 | 深圳市依思普林科技有限公司 | Fast recovery diode and make the method for this diode |
CN103311314B (en) * | 2012-03-11 | 2016-08-03 | 深圳市立德电控科技有限公司 | Fast recovery diode and the method making this diode |
CN102820323B (en) * | 2012-09-07 | 2014-11-05 | 温州大学 | Nanometer silicon carbide/crystal silicon carbide double graded junction fast recovery diode and preparation method thereof |
CN107922202A (en) * | 2015-09-01 | 2018-04-17 | 日立化成株式会社 | Aeroge |
JP6846119B2 (en) * | 2016-05-02 | 2021-03-24 | 株式会社 日立パワーデバイス | Diode and power converter using it |
CN107623045A (en) * | 2017-09-30 | 2018-01-23 | 绍兴上虞欧菲光电科技有限公司 | A kind of diode |
CN108598153B (en) * | 2018-06-29 | 2023-12-29 | 南京晟芯半导体有限公司 | Soft recovery power semiconductor diode and preparation method thereof |
CN111653611A (en) * | 2020-07-20 | 2020-09-11 | 电子科技大学 | Method for improving reverse recovery characteristic of semiconductor device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4228453A (en) * | 1977-06-21 | 1980-10-14 | Thomson-Csf | (III) Plane gallium arsenide IMPATT diode |
US4594602A (en) * | 1983-04-13 | 1986-06-10 | Hitachi, Ltd. | High speed diode |
US5032540A (en) * | 1988-11-09 | 1991-07-16 | Sgs-Thomson Microelectronics S.A. | A Process for modulating the quantity of gold diffused into a silicon substrate |
EP0614231A2 (en) * | 1993-03-05 | 1994-09-07 | Mitsubishi Denki Kabushiki Kaisha | PN junction and method of manufacturing the same |
EP0749166A1 (en) * | 1995-05-18 | 1996-12-18 | Mitsubishi Denki Kabushiki Kaisha | Diode and method of manufacturing the same |
US5977611A (en) * | 1997-04-04 | 1999-11-02 | Siemens Aktiengesellschaft | Power diode and hybrid diode, voltage limiter and freewheeling diode having the power diode |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1547287A (en) * | 1966-12-19 | 1968-11-22 | Lucas Industries Ltd | Semiconductor diode |
JPS5929469A (en) | 1982-08-11 | 1984-02-16 | Hitachi Ltd | Semiconductor device |
JPS6453582A (en) * | 1987-08-25 | 1989-03-01 | Toko Inc | Variable capacitance diode device |
US5017950A (en) * | 1989-01-19 | 1991-05-21 | Toko, Inc. | Variable-capacitance diode element having wide capacitance variation range |
DE4201183A1 (en) | 1992-01-17 | 1993-07-22 | Eupec Gmbh & Co Kg | PERFORMANCE DIODE |
JP2509127B2 (en) * | 1992-03-04 | 1996-06-19 | 財団法人半導体研究振興会 | Electrostatic induction device |
US5608244A (en) | 1992-04-28 | 1997-03-04 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor diode with reduced recovery current |
JP2854212B2 (en) * | 1993-03-12 | 1999-02-03 | ローム株式会社 | Surge absorbing diode |
JP3968912B2 (en) * | 1999-05-10 | 2007-08-29 | 富士電機デバイステクノロジー株式会社 | diode |
-
2000
- 2000-06-26 US US09/603,605 patent/US6737731B1/en not_active Expired - Lifetime
-
2001
- 2001-06-22 JP JP2002505688A patent/JP4608181B2/en not_active Expired - Lifetime
- 2001-06-22 WO PCT/US2001/019990 patent/WO2002001643A2/en active Application Filing
- 2001-06-22 AU AU2001270086A patent/AU2001270086A1/en not_active Abandoned
- 2001-06-22 DE DE10196362T patent/DE10196362B4/en not_active Expired - Lifetime
- 2001-06-22 CN CNB018117856A patent/CN1211865C/en not_active Expired - Lifetime
- 2001-06-26 TW TW090115470A patent/TW507384B/en not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4228453A (en) * | 1977-06-21 | 1980-10-14 | Thomson-Csf | (III) Plane gallium arsenide IMPATT diode |
US4594602A (en) * | 1983-04-13 | 1986-06-10 | Hitachi, Ltd. | High speed diode |
US5032540A (en) * | 1988-11-09 | 1991-07-16 | Sgs-Thomson Microelectronics S.A. | A Process for modulating the quantity of gold diffused into a silicon substrate |
EP0614231A2 (en) * | 1993-03-05 | 1994-09-07 | Mitsubishi Denki Kabushiki Kaisha | PN junction and method of manufacturing the same |
EP0749166A1 (en) * | 1995-05-18 | 1996-12-18 | Mitsubishi Denki Kabushiki Kaisha | Diode and method of manufacturing the same |
US5977611A (en) * | 1997-04-04 | 1999-11-02 | Siemens Aktiengesellschaft | Power diode and hybrid diode, voltage limiter and freewheeling diode having the power diode |
Non-Patent Citations (1)
Title |
---|
BANERJEE J P ET AL: "DESIGN AND OPTIMIZATION OF THE DOPING PROFILE OF DOUBLE DRIFT LOW-HIGH-LOW INDIUM PHOSPHIDE DIODES", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, INSTITUTE OF PHYSICS. LONDON, GB, vol. 6, no. 7, 1 July 1991 (1991-07-01), pages 663 - 669, XP000227432, ISSN: 0268-1242 * |
Also Published As
Publication number | Publication date |
---|---|
JP4608181B2 (en) | 2011-01-05 |
WO2002001643A2 (en) | 2002-01-03 |
DE10196362B4 (en) | 2007-04-05 |
CN1441968A (en) | 2003-09-10 |
TW507384B (en) | 2002-10-21 |
CN1211865C (en) | 2005-07-20 |
JP2004502305A (en) | 2004-01-22 |
AU2001270086A1 (en) | 2002-01-08 |
US6737731B1 (en) | 2004-05-18 |
DE10196362T1 (en) | 2003-05-22 |
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