WO2002001643A3 - Soft recovery power diode and related method - Google Patents

Soft recovery power diode and related method Download PDF

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Publication number
WO2002001643A3
WO2002001643A3 PCT/US2001/019990 US0119990W WO0201643A3 WO 2002001643 A3 WO2002001643 A3 WO 2002001643A3 US 0119990 W US0119990 W US 0119990W WO 0201643 A3 WO0201643 A3 WO 0201643A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layer
dopant
related method
power diode
recovery power
Prior art date
Application number
PCT/US2001/019990
Other languages
French (fr)
Other versions
WO2002001643A2 (en
Inventor
Praveen Muraleedharan Shenoy
Original Assignee
Fairchild Semiconductor
Praveen Muraleedharan Shenoy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor, Praveen Muraleedharan Shenoy filed Critical Fairchild Semiconductor
Priority to DE10196362T priority Critical patent/DE10196362B4/en
Priority to JP2002505688A priority patent/JP4608181B2/en
Priority to AU2001270086A priority patent/AU2001270086A1/en
Publication of WO2002001643A2 publication Critical patent/WO2002001643A2/en
Publication of WO2002001643A3 publication Critical patent/WO2002001643A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/927—Different doping levels in different parts of PN junction to produce shaped depletion layer

Abstract

A semiconductor diode includes a first semiconductor layer including a dopant having a first conductivity type. A second semiconductor layer is adjacent the first semiconductor layer and includes a dopant having the first conductivity type and having a dopant concentration less than a dopant concentration of the first semiconductor layer. Adjacent the second semiconductor layer is a third semiconductor layer including a dopant having the first conductivity type and having a dopant concentration greater than the dopant concentration of the second semiconductor layer. A fourth semiconductor layer is adjacent the third semiconductor layer and includes a dopant of a second conductivity type. Respective contacts are connected to the first and fourth semiconductor layers.
PCT/US2001/019990 2000-06-26 2001-06-22 Soft recovery power diode and related method WO2002001643A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE10196362T DE10196362B4 (en) 2000-06-26 2001-06-22 Power diode with soft turn-off behavior (soft recovery) and related process
JP2002505688A JP4608181B2 (en) 2000-06-26 2001-06-22 Soft recovery power diode and related method
AU2001270086A AU2001270086A1 (en) 2000-06-26 2001-06-22 Soft recovery power diode and related method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/603,605 US6737731B1 (en) 2000-06-26 2000-06-26 Soft recovery power diode
US09/603,605 2000-06-26

Publications (2)

Publication Number Publication Date
WO2002001643A2 WO2002001643A2 (en) 2002-01-03
WO2002001643A3 true WO2002001643A3 (en) 2002-04-18

Family

ID=24416158

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/019990 WO2002001643A2 (en) 2000-06-26 2001-06-22 Soft recovery power diode and related method

Country Status (7)

Country Link
US (1) US6737731B1 (en)
JP (1) JP4608181B2 (en)
CN (1) CN1211865C (en)
AU (1) AU2001270086A1 (en)
DE (1) DE10196362B4 (en)
TW (1) TW507384B (en)
WO (1) WO2002001643A2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7169634B2 (en) * 2003-01-15 2007-01-30 Advanced Power Technology, Inc. Design and fabrication of rugged FRED
US7199442B2 (en) * 2004-07-15 2007-04-03 Fairchild Semiconductor Corporation Schottky diode structure to reduce capacitance and switching losses and method of making same
DE102004048607A1 (en) * 2004-10-06 2006-04-13 Robert Bosch Gmbh Semiconductor device
JP4843253B2 (en) * 2005-05-23 2011-12-21 株式会社東芝 Power semiconductor device
US7728409B2 (en) * 2005-11-10 2010-06-01 Fuji Electric Device Technology Co., Ltd. Semiconductor device and method of manufacturing the same
JP2009049045A (en) * 2007-08-13 2009-03-05 Kansai Electric Power Co Inc:The Soft recovery diode
JP5309360B2 (en) * 2008-07-31 2013-10-09 三菱電機株式会社 Semiconductor device and manufacturing method thereof
US8933506B2 (en) * 2011-01-31 2015-01-13 Alpha And Omega Semiconductor Incorporated Diode structures with controlled injection efficiency for fast switching
CN102832121B (en) * 2011-06-17 2015-04-01 中国科学院微电子研究所 Manufacture method of fast recovery diode
CN103311314B (en) * 2012-03-11 2016-08-03 深圳市立德电控科技有限公司 Fast recovery diode and the method making this diode
CN103311278B (en) * 2012-03-11 2016-03-02 深圳市依思普林科技有限公司 Fast recovery diode and make the method for this diode
CN102820323B (en) * 2012-09-07 2014-11-05 温州大学 Nanometer silicon carbide/crystal silicon carbide double graded junction fast recovery diode and preparation method thereof
JP6288384B2 (en) * 2015-09-01 2018-03-07 日立化成株式会社 Airgel
JP6846119B2 (en) * 2016-05-02 2021-03-24 株式会社 日立パワーデバイス Diode and power converter using it
CN107623045A (en) * 2017-09-30 2018-01-23 绍兴上虞欧菲光电科技有限公司 A kind of diode
CN108598153B (en) * 2018-06-29 2023-12-29 南京晟芯半导体有限公司 Soft recovery power semiconductor diode and preparation method thereof
CN111653611A (en) * 2020-07-20 2020-09-11 电子科技大学 Method for improving reverse recovery characteristic of semiconductor device

Citations (6)

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Publication number Priority date Publication date Assignee Title
US4228453A (en) * 1977-06-21 1980-10-14 Thomson-Csf (III) Plane gallium arsenide IMPATT diode
US4594602A (en) * 1983-04-13 1986-06-10 Hitachi, Ltd. High speed diode
US5032540A (en) * 1988-11-09 1991-07-16 Sgs-Thomson Microelectronics S.A. A Process for modulating the quantity of gold diffused into a silicon substrate
EP0614231A2 (en) * 1993-03-05 1994-09-07 Mitsubishi Denki Kabushiki Kaisha PN junction and method of manufacturing the same
EP0749166A1 (en) * 1995-05-18 1996-12-18 Mitsubishi Denki Kabushiki Kaisha Diode and method of manufacturing the same
US5977611A (en) * 1997-04-04 1999-11-02 Siemens Aktiengesellschaft Power diode and hybrid diode, voltage limiter and freewheeling diode having the power diode

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FR1547287A (en) * 1966-12-19 1968-11-22 Lucas Industries Ltd Semiconductor diode
JPS5929469A (en) 1982-08-11 1984-02-16 Hitachi Ltd Semiconductor device
JPS6453582A (en) * 1987-08-25 1989-03-01 Toko Inc Variable capacitance diode device
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
DE4201183A1 (en) 1992-01-17 1993-07-22 Eupec Gmbh & Co Kg PERFORMANCE DIODE
JP2509127B2 (en) * 1992-03-04 1996-06-19 財団法人半導体研究振興会 Electrostatic induction device
US5608244A (en) 1992-04-28 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor diode with reduced recovery current
JP2854212B2 (en) * 1993-03-12 1999-02-03 ローム株式会社 Surge absorbing diode
JP3968912B2 (en) * 1999-05-10 2007-08-29 富士電機デバイステクノロジー株式会社 diode

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4228453A (en) * 1977-06-21 1980-10-14 Thomson-Csf (III) Plane gallium arsenide IMPATT diode
US4594602A (en) * 1983-04-13 1986-06-10 Hitachi, Ltd. High speed diode
US5032540A (en) * 1988-11-09 1991-07-16 Sgs-Thomson Microelectronics S.A. A Process for modulating the quantity of gold diffused into a silicon substrate
EP0614231A2 (en) * 1993-03-05 1994-09-07 Mitsubishi Denki Kabushiki Kaisha PN junction and method of manufacturing the same
EP0749166A1 (en) * 1995-05-18 1996-12-18 Mitsubishi Denki Kabushiki Kaisha Diode and method of manufacturing the same
US5977611A (en) * 1997-04-04 1999-11-02 Siemens Aktiengesellschaft Power diode and hybrid diode, voltage limiter and freewheeling diode having the power diode

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BANERJEE J P ET AL: "DESIGN AND OPTIMIZATION OF THE DOPING PROFILE OF DOUBLE DRIFT LOW-HIGH-LOW INDIUM PHOSPHIDE DIODES", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, INSTITUTE OF PHYSICS. LONDON, GB, vol. 6, no. 7, 1 July 1991 (1991-07-01), pages 663 - 669, XP000227432, ISSN: 0268-1242 *

Also Published As

Publication number Publication date
DE10196362T1 (en) 2003-05-22
CN1211865C (en) 2005-07-20
TW507384B (en) 2002-10-21
AU2001270086A1 (en) 2002-01-08
JP4608181B2 (en) 2011-01-05
WO2002001643A2 (en) 2002-01-03
CN1441968A (en) 2003-09-10
US6737731B1 (en) 2004-05-18
DE10196362B4 (en) 2007-04-05
JP2004502305A (en) 2004-01-22

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