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Numéro de publicationWO2002007328 A3
Type de publicationDemande
Numéro de demandePCT/US2001/017037
Date de publication6 juin 2002
Date de dépôt24 mai 2001
Date de priorité17 juil. 2000
Autre référence de publicationWO2002007328A2
Numéro de publicationPCT/2001/17037, PCT/US/1/017037, PCT/US/1/17037, PCT/US/2001/017037, PCT/US/2001/17037, PCT/US1/017037, PCT/US1/17037, PCT/US1017037, PCT/US117037, PCT/US2001/017037, PCT/US2001/17037, PCT/US2001017037, PCT/US200117037, WO 0207328 A3, WO 0207328A3, WO 2002/007328 A3, WO 2002007328 A3, WO 2002007328A3, WO-A3-0207328, WO-A3-2002007328, WO0207328 A3, WO0207328A3, WO2002/007328A3, WO2002007328 A3, WO2002007328A3
InventeursTimothy J Brophy, Barbara M Foley
DéposantMotorola Inc
Exporter la citationBiBTeX, EndNote, RefMan
Liens externes:  Patentscope, Espacenet
Apparatus for handling optical communication signals and method of manufacture therefor
WO 2002007328 A3
Résumé
An apparatus for effecting selected aspects of optically conveyed communications treats received incoming optical signals to produce treated outgoing optical signals. The apparatus comprises a plurality of optical signal handling devices (188, 192, 202, and 232) implemented in a monolithic integrated structure arranged on a single substrate (182). The apparatus may further comprise at least one electrically driven device (198) implemented in the monolithic integrated structure. Preferably, at least a first portion of the monolithic structure is implemented in silicon, and at least a second portion of the monolithic structure is implemented in at least one compound semiconductor material.
Citations de brevets
Brevet cité Date de dépôt Date de publication Déposant Titre
US4773063 *13 nov. 198420 sept. 1988University Of DelawareOptical wavelength division multiplexing/demultiplexing system
US5191625 *10 avr. 19922 mars 1993Telefonaktiebolaget L M EricssonTerminal for a frequency divided, optical communication system
US5394489 *27 juil. 199328 févr. 1995At&T Corp.Wavelength division multiplexed optical communication transmitters
US5572052 *19 janv. 19955 nov. 1996Mitsubishi Denki Kabushiki KaishaElectronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer
US6146906 *16 sept. 199914 nov. 2000Nec CorporationDC magnetron sputtering method for manufacturing electrode of ferroelectric capacitor
US6184044 *10 déc. 19986 févr. 2001Nec CorporationThin film capacitor including perovskite-type oxide layers having columnar structure and granular structure
Classifications
Classification internationaleH01S5/50, G02B6/132, H01S5/026, G02B6/13, G02B6/12, G02B6/43, H01S5/02, H01S5/183
Classification coopérativeG02B6/43, H01S5/0264, H01S5/0265, H01S5/0262, H01S5/021, G02B6/132, G02B2006/12169, G02B6/12004, G02B6/131, H01S5/183, H01S5/0261
Classification européenneG02B6/132, G02B6/12D, G02B6/13E
Événements juridiques
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