WO2002009147A3 - High pressure processing chamber for semiconductor substrate - Google Patents

High pressure processing chamber for semiconductor substrate Download PDF

Info

Publication number
WO2002009147A3
WO2002009147A3 PCT/IB2001/001761 IB0101761W WO0209147A3 WO 2002009147 A3 WO2002009147 A3 WO 2002009147A3 IB 0101761 W IB0101761 W IB 0101761W WO 0209147 A3 WO0209147 A3 WO 0209147A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
high pressure
platen
chamber housing
processing chamber
Prior art date
Application number
PCT/IB2001/001761
Other languages
French (fr)
Other versions
WO2002009147A2 (en
Inventor
Maximilian Albert Biberger
Frederick Paul Layman
Thomas Robert Sutton
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to AU2001290171A priority Critical patent/AU2001290171A1/en
Priority to KR1020037001002A priority patent/KR100750018B1/en
Priority to JP2002514758A priority patent/JP4724353B2/en
Priority to EP01970053A priority patent/EP1303870A2/en
Publication of WO2002009147A2 publication Critical patent/WO2002009147A2/en
Publication of WO2002009147A3 publication Critical patent/WO2002009147A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical drive mechanism couples the platen to the chamber housing. In operation, the mechanical drive mechanism separates the platen from the chamber housing for loading of the semiconductor substrate. In further operation, the mechanical drive mechanism causes the second sealing surface of the platen and the first sealing surface of the chamber housing to form a high pressure processing chamber around the semiconductor substrate.
PCT/IB2001/001761 2000-07-26 2001-07-24 High pressure processing chamber for semiconductor substrate WO2002009147A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2001290171A AU2001290171A1 (en) 2000-07-26 2001-07-24 High pressure processing chamber for semiconductor substrate
KR1020037001002A KR100750018B1 (en) 2000-07-26 2001-07-24 High pressure processing chamber for semiconductor substrate
JP2002514758A JP4724353B2 (en) 2000-07-26 2001-07-24 High pressure processing chamber for semiconductor substrates
EP01970053A EP1303870A2 (en) 2000-07-26 2001-07-24 High pressure processing chamber for semiconductor substrate

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US22088300P 2000-07-26 2000-07-26
US60/220,883 2000-07-26
US28313201P 2001-04-10 2001-04-10
US60/283,132 2001-04-10

Publications (2)

Publication Number Publication Date
WO2002009147A2 WO2002009147A2 (en) 2002-01-31
WO2002009147A3 true WO2002009147A3 (en) 2002-07-18

Family

ID=26915269

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2001/001761 WO2002009147A2 (en) 2000-07-26 2001-07-24 High pressure processing chamber for semiconductor substrate

Country Status (7)

Country Link
US (2) US6921456B2 (en)
EP (1) EP1303870A2 (en)
JP (1) JP4724353B2 (en)
KR (1) KR100750018B1 (en)
AU (1) AU2001290171A1 (en)
TW (1) TW505963B (en)
WO (1) WO2002009147A2 (en)

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US7255772B2 (en) 2007-08-14
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