WO2002009150A3 - Semiconductor structure for use with high-frequency signals - Google Patents

Semiconductor structure for use with high-frequency signals Download PDF

Info

Publication number
WO2002009150A3
WO2002009150A3 PCT/US2001/022573 US0122573W WO0209150A3 WO 2002009150 A3 WO2002009150 A3 WO 2002009150A3 US 0122573 W US0122573 W US 0122573W WO 0209150 A3 WO0209150 A3 WO 0209150A3
Authority
WO
WIPO (PCT)
Prior art keywords
systems
layers
accommodating buffer
toll
high quality
Prior art date
Application number
PCT/US2001/022573
Other languages
French (fr)
Other versions
WO2002009150A2 (en
Inventor
Nada El-Zein
Jamal Ramdani
Kurt Eisenbeiser
Ravindranath Droopad
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to AU2001276968A priority Critical patent/AU2001276968A1/en
Publication of WO2002009150A2 publication Critical patent/WO2002009150A2/en
Publication of WO2002009150A3 publication Critical patent/WO2002009150A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/90—Bulk effect device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

Abstract

High quality epitaxial layers of different compound semiconductor materials (237, 239) can be grown overlying regions (231, 232) of large silicon wafers (235) by first growing accommodating buffer layers (236, 238). The accommodating buffer layers is are layers of monocrystalline oxide spaced apart from the silicon wafer by amorphous interface layers (253, 234) of silicon oxide, which dissipates stain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Various circuits (242, 247) can be formed in the epitaxial layers which may be in communication with circuits (241) in the substrate. These structures have application involving communications with high frequency signals including intelligent transportation systems such as automobile radar systems, smart cruise control systems, collision avoidance systems and automotive navigations systems; and electronic payment systems that use microwave or RF signals such as electronic toll payment for various transportation systems including train fares, and toll roads, parking structures, and toll bridges automobiles.
PCT/US2001/022573 2000-07-24 2001-07-18 Semiconductor structure for use with high-frequency signals WO2002009150A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001276968A AU2001276968A1 (en) 2000-07-24 2001-07-18 Semiconductor structure for use with high-frequency signals

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/624,296 2000-07-24
US09/624,296 US6590236B1 (en) 2000-07-24 2000-07-24 Semiconductor structure for use with high-frequency signals

Publications (2)

Publication Number Publication Date
WO2002009150A2 WO2002009150A2 (en) 2002-01-31
WO2002009150A3 true WO2002009150A3 (en) 2003-02-13

Family

ID=24501428

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/022573 WO2002009150A2 (en) 2000-07-24 2001-07-18 Semiconductor structure for use with high-frequency signals

Country Status (4)

Country Link
US (1) US6590236B1 (en)
AU (1) AU2001276968A1 (en)
TW (1) TW523790B (en)
WO (1) WO2002009150A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3754897B2 (en) * 2001-02-09 2006-03-15 キヤノン株式会社 Semiconductor device substrate and method for manufacturing SOI substrate
US6872252B2 (en) * 2002-03-06 2005-03-29 Agilent Technologies, Inc. Lead-based perovskite buffer for forming indium phosphide on silicon
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US6878610B1 (en) * 2002-08-27 2005-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Relaxed silicon germanium substrate with low defect density
EP1831919A2 (en) * 2004-10-28 2007-09-12 Nitronex Corporation Gallium nitride/silicon based monolithic microwave integrated circuit
US7884740B2 (en) * 2008-03-28 2011-02-08 National Chiao Tung University Multi-lane vehicle detection apparatus
GB2517697A (en) 2013-08-27 2015-03-04 Ibm Compound semiconductor structure
WO2017002471A1 (en) * 2015-07-02 2017-01-05 ソニー株式会社 Vehicle control device, vehicle control method, and program
US11271566B2 (en) * 2018-12-14 2022-03-08 Integrated Device Technology, Inc. Digital logic compatible inputs in compound semiconductor circuits

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63198365A (en) * 1987-02-13 1988-08-17 Sharp Corp Semiconductor device
US4896194A (en) * 1987-07-08 1990-01-23 Nec Corporation Semiconductor device having an integrated circuit formed on a compound semiconductor layer
EP0469790A1 (en) * 1990-08-02 1992-02-05 AT&T Corp. Semiconductor devices with low dislocation defects and method for making same
EP0875922A1 (en) * 1997-04-03 1998-11-04 France Telecom Etching-free technology for integration of components
WO2001059836A1 (en) * 2000-02-10 2001-08-16 Motorola Inc. Communicating device

Family Cites Families (163)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3670213A (en) 1969-05-24 1972-06-13 Tokyo Shibaura Electric Co Semiconductor photosensitive device with a rare earth oxide compound forming a rectifying junction
US4242595A (en) 1978-07-27 1980-12-30 University Of Southern California Tunnel diode load for ultra-fast low power switching circuits
US4424589A (en) 1980-04-11 1984-01-03 Coulter Systems Corporation Flat bed scanner system and method
US4289920A (en) 1980-06-23 1981-09-15 International Business Machines Corporation Multiple bandgap solar cell on transparent substrate
DE3168688D1 (en) 1980-11-06 1985-03-14 Toshiba Kk Method for manufacturing a semiconductor device
US4442590A (en) 1980-11-17 1984-04-17 Ball Corporation Monolithic microwave integrated circuit with integral array antenna
JPS57177583A (en) 1981-04-14 1982-11-01 Int Standard Electric Corp Holl effect device
GB2115996B (en) 1981-11-02 1985-03-20 Kramer Kane N Portable data processing and storage system
US4439014A (en) 1981-11-13 1984-03-27 Mcdonnell Douglas Corporation Low voltage electro-optic modulator
US4482422A (en) 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
US4756007A (en) 1984-03-08 1988-07-05 Codex Corporation Adaptive communication rate modem
JPS60212018A (en) 1984-04-04 1985-10-24 Nec Corp Surface acoustic wave substrate and its manufacture
US4773063A (en) 1984-11-13 1988-09-20 University Of Delaware Optical wavelength division multiplexing/demultiplexing system
US4748485A (en) 1985-03-21 1988-05-31 Hughes Aircraft Company Opposed dual-gate hybrid structure for three-dimensional integrated circuits
JPS6263828A (en) 1985-09-06 1987-03-20 Yokogawa Electric Corp Vibration type transducer and its manufacture
US4901133A (en) 1986-04-02 1990-02-13 Texas Instruments Incorporated Multilayer semi-insulating film for hermetic wafer passivation and method for making same
US4891091A (en) 1986-07-14 1990-01-02 Gte Laboratories Incorporated Method of epitaxially growing compound semiconductor materials
US4888202A (en) 1986-07-31 1989-12-19 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
US4772929A (en) 1987-01-09 1988-09-20 Sprague Electric Company Hall sensor with integrated pole pieces
US5511238A (en) 1987-06-26 1996-04-23 Texas Instruments Incorporated Monolithic microwave transmitter/receiver
EP0300499B2 (en) 1987-07-24 1998-08-19 Matsushita Electric Industrial Co., Ltd. Composite superconductor layer
JPH0766922B2 (en) 1987-07-29 1995-07-19 株式会社村田製作所 Method for manufacturing semiconductor device
JPH0695554B2 (en) 1987-10-12 1994-11-24 工業技術院長 Method for forming single crystal magnesia spinel film
US4885376A (en) 1987-10-13 1989-12-05 Iowa State University Research Foundation, Inc. New types of organometallic reagents and catalysts for asymmetric synthesis
US5073981A (en) 1988-01-22 1991-12-17 At&T Bell Laboratories Optical communication by injection-locking to a signal which modulates an optical carrier
US4889402A (en) 1988-08-31 1989-12-26 American Telephone And Telegraph Company, At&T Bell Laboratories Electro-optic polarization modulation in multi-electrode waveguides
US4965649A (en) 1988-12-23 1990-10-23 Ford Aerospace Corporation Manufacture of monolithic infrared focal plane arrays
US5227196A (en) 1989-02-16 1993-07-13 Semiconductor Energy Laboratory Co., Ltd. Method of forming a carbon film on a substrate made of an oxide material
US4999842A (en) 1989-03-01 1991-03-12 At&T Bell Laboratories Quantum well vertical cavity laser
US4990974A (en) 1989-03-02 1991-02-05 Thunderbird Technologies, Inc. Fermi threshold field effect transistor
US5143854A (en) 1989-06-07 1992-09-01 Affymax Technologies N.V. Large scale photolithographic solid phase synthesis of polypeptides and receptor binding screening thereof
US5504035A (en) 1989-08-28 1996-04-02 Lsi Logic Corporation Process for solder ball interconnecting a semiconductor device to a substrate using a noble metal foil embedded interposer substrate
US5055445A (en) 1989-09-25 1991-10-08 Litton Systems, Inc. Method of forming oxidic high Tc superconducting materials on substantially lattice matched monocrystalline substrates utilizing liquid phase epitaxy
JPH03150218A (en) 1989-11-07 1991-06-26 Sumitomo Electric Ind Ltd Production of superconductive thin film
US5051790A (en) 1989-12-22 1991-09-24 David Sarnoff Research Center, Inc. Optoelectronic interconnections for integrated circuits
JPH088214B2 (en) 1990-01-19 1996-01-29 三菱電機株式会社 Semiconductor device
US5310707A (en) 1990-03-28 1994-05-10 Superconductivity Research Laboratory International Substrate material for the preparation of oxide superconductors
US5132648A (en) 1990-06-08 1992-07-21 Rockwell International Corporation Large array MMIC feedthrough
US5281834A (en) 1990-08-31 1994-01-25 Motorola, Inc. Non-silicon and silicon bonded structure and method of manufacture
US5880452A (en) 1990-11-15 1999-03-09 Geo Labs, Inc. Laser based PCMCIA data collection system with automatic triggering for portable applications and method of use
US5273911A (en) 1991-03-07 1993-12-28 Mitsubishi Denki Kabushiki Kaisha Method of producing a thin-film solar cell
SE468267B (en) 1991-04-10 1992-11-30 Ericsson Telefon Ab L M TERMINAL FOR A FREQUENCY PART, OPTICAL COMMUNICATION SYSTEM
US5185589A (en) 1991-05-17 1993-02-09 Westinghouse Electric Corp. Microwave film bulk acoustic resonator and manifolded filter bank
US5194397A (en) 1991-06-05 1993-03-16 International Business Machines Corporation Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface
US5140651A (en) 1991-06-27 1992-08-18 The United States Of America As Represented By The Secretary Of The Air Force Semiconductive guided-wave programmable optical delay lines using electrooptic fabry-perot elements
KR960001197B1 (en) 1991-07-16 1996-01-19 아사히가세이고오교 가부시끼가이샤 Semiconductor sensor and the manufacturing method
US5306649A (en) 1991-07-26 1994-04-26 Avantek, Inc. Method for producing a fully walled emitter-base structure in a bipolar transistor
EP0530972B1 (en) 1991-08-02 1997-11-05 Canon Kabushiki Kaisha Liquid crystal image display unit
DE69233314T2 (en) 1991-10-11 2005-03-24 Canon K.K. Process for the production of semiconductor products
US5208182A (en) 1991-11-12 1993-05-04 Kopin Corporation Dislocation density reduction in gallium arsenide on silicon heterostructures
US5216729A (en) 1991-11-18 1993-06-01 Harmonic Lightwaves, Inc. Active alignment system for laser to fiber coupling
DE59108800D1 (en) 1991-12-21 1997-08-28 Itt Ind Gmbh Deutsche Offset compensated Hall sensor
JP3416163B2 (en) 1992-01-31 2003-06-16 キヤノン株式会社 Semiconductor substrate and manufacturing method thereof
JP3250673B2 (en) 1992-01-31 2002-01-28 キヤノン株式会社 Semiconductor element substrate and method of manufacturing the same
US5270298A (en) 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5155658A (en) 1992-03-05 1992-10-13 Bell Communications Research, Inc. Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films
US5326721A (en) 1992-05-01 1994-07-05 Texas Instruments Incorporated Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer
EP0568064B1 (en) 1992-05-01 1999-07-14 Texas Instruments Incorporated Pb/Bi-containing high-dielectric constant oxides using a non-Pb/Bi-containing perovskite as a buffer layer
US5442561A (en) 1992-05-12 1995-08-15 Nippon Telegraph And Telephone Corporation Production management system and its application method
US5572052A (en) 1992-07-24 1996-11-05 Mitsubishi Denki Kabushiki Kaisha Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer
US5296721A (en) 1992-07-31 1994-03-22 Hughes Aircraft Company Strained interband resonant tunneling negative resistance diode
WO1994003931A1 (en) 1992-08-07 1994-02-17 Asahi Kasei Kogyo Kabushiki Kaisha Nitride based semiconductor device and manufacture thereof
US5314547A (en) 1992-09-28 1994-05-24 General Motors Corporation Rare earth slab doping of group III-V compounds
US5356509A (en) * 1992-10-16 1994-10-18 Astropower, Inc. Hetero-epitaxial growth of non-lattice matched semiconductors
JPH06151872A (en) 1992-11-09 1994-05-31 Mitsubishi Kasei Corp Fet device
DE69331538T2 (en) 1992-12-01 2002-08-29 Matsushita Electric Ind Co Ltd Process for producing an electrical thin film
US5248564A (en) 1992-12-09 1993-09-28 Bell Communications Research, Inc. C-axis perovskite thin films grown on silicon dioxide
JPH06196648A (en) 1992-12-25 1994-07-15 Fuji Xerox Co Ltd Oriented ferroelectric thin film device
JPH06303137A (en) 1992-12-29 1994-10-28 Hitachi Ltd D/a converter, offset adjustment circuit and portable communication terminal equipment using them
US5352926A (en) 1993-01-04 1994-10-04 Motorola, Inc. Flip chip package and method of making
JP3047656B2 (en) 1993-01-12 2000-05-29 株式会社村田製作所 Method for producing InSb thin film
US5371734A (en) 1993-01-29 1994-12-06 Digital Ocean, Inc. Medium access control protocol for wireless network
JPH06338630A (en) 1993-05-28 1994-12-06 Omron Corp Semiconductor light-emitting element, and optical detector, optical information processor, optical coupler and light-emitting device using the light-emitting element
US5572040A (en) 1993-07-12 1996-11-05 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
US5394489A (en) 1993-07-27 1995-02-28 At&T Corp. Wavelength division multiplexed optical communication transmitters
JP3333325B2 (en) 1993-08-26 2002-10-15 株式会社東芝 Semiconductor device, semiconductor device simulation method, and semiconductor device simulator
US5792679A (en) 1993-08-30 1998-08-11 Sharp Microelectronics Technology, Inc. Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant
US5650362A (en) 1993-11-04 1997-07-22 Fuji Xerox Co. Oriented conductive film and process for preparing the same
US5549977A (en) * 1993-11-18 1996-08-27 Lucent Technologies Inc. Article comprising magnetoresistive material
JP3015656B2 (en) 1994-03-23 2000-03-06 株式会社東芝 Method and apparatus for producing semi-insulating GaAs single crystal
JP3330218B2 (en) 1994-03-25 2002-09-30 三菱電機株式会社 Semiconductor device manufacturing method and semiconductor device
US5883564A (en) 1994-04-18 1999-03-16 General Motors Corporation Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer
US5491461A (en) 1994-05-09 1996-02-13 General Motors Corporation Magnetic field sensor on elemental semiconductor substrate with electric field reduction means
US5479033A (en) 1994-05-27 1995-12-26 Sandia Corporation Complementary junction heterostructure field-effect transistor
US5589284A (en) 1994-08-01 1996-12-31 Texas Instruments Incorporated Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics
US5828080A (en) * 1994-08-17 1998-10-27 Tdk Corporation Oxide thin film, electronic device substrate and electronic device
US5504183A (en) 1994-09-12 1996-04-02 Motorola Organometallic fluorescent complex polymers for light emitting applications
US5635741A (en) 1994-09-30 1997-06-03 Texas Instruments Incorporated Barium strontium titanate (BST) thin films by erbium donor doping
US5473047A (en) 1994-10-11 1995-12-05 Motorola, Inc. Soluble precursor to poly (cyanoterephthalydene) and method of preparation
US5486406A (en) 1994-11-07 1996-01-23 Motorola Green-emitting organometallic complexes for use in light emitting devices
US5519235A (en) 1994-11-18 1996-05-21 Bell Communications Research, Inc. Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes
JPH08148968A (en) 1994-11-24 1996-06-07 Mitsubishi Electric Corp Thin film piezoelectric element
KR0148596B1 (en) 1994-11-28 1998-10-15 양승택 Superconducting field effect device with grain boundary channel and method for making the same
US5777350A (en) 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
US5937274A (en) 1995-01-31 1999-08-10 Hitachi, Ltd. Fabrication method for AlGaIn NPAsSb based devices
US5552547A (en) 1995-02-13 1996-09-03 Shi; Song Q. Organometallic complexes with built-in fluorescent dyes for use in light emitting devices
US5610744A (en) 1995-02-16 1997-03-11 Board Of Trustees Of The University Of Illinois Optical communications and interconnection networks having opto-electronic switches and direct optical routers
US5679965A (en) 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
US6088216A (en) 1995-04-28 2000-07-11 International Business Machines Corporation Lead silicate based capacitor structures
US5528067A (en) 1995-05-08 1996-06-18 Hughes Aircraft Company Magnetic field detection
EP0972309A1 (en) 1995-06-28 2000-01-19 Telcordia Technologies, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
KR100193219B1 (en) 1995-07-06 1999-06-15 박원훈 Passive polarizer
US5753934A (en) * 1995-08-04 1998-05-19 Tok Corporation Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film
US5551238A (en) 1995-08-23 1996-09-03 Prueitt; Melvin L. Hydro-air renewable power system
US5633724A (en) 1995-08-29 1997-05-27 Hewlett-Packard Company Evanescent scanning of biochemical array
EP0765045B1 (en) 1995-09-21 2001-12-19 Alcatel Arrangement for amplifying and combining optical signals, and method for upstream transmission realised therewith
JP3523724B2 (en) 1995-09-29 2004-04-26 東芝テック株式会社 Thermal transfer color printer
US5659180A (en) 1995-11-13 1997-08-19 Motorola Heterojunction interband tunnel diodes with improved P/V current ratios
JP3645338B2 (en) 1995-12-11 2005-05-11 株式会社東芝 Nonvolatile semiconductor memory device
JP3036424B2 (en) 1996-01-12 2000-04-24 日本電気株式会社 Optical repeater with signal regeneration function
US5745631A (en) 1996-01-26 1998-04-28 Irvine Sensors Corporation Self-aligning optical beam system
FR2744578B1 (en) 1996-02-06 1998-04-30 Motorola Semiconducteurs HIGH FREQUENCY AMPLIFIER
US5833603A (en) 1996-03-13 1998-11-10 Lipomatrix, Inc. Implantable biosensing transponder
US5801072A (en) 1996-03-14 1998-09-01 Lsi Logic Corporation Method of packaging integrated circuits
US5792569A (en) 1996-03-19 1998-08-11 International Business Machines Corporation Magnetic devices and sensors based on perovskite manganese oxide materials
DE19712496A1 (en) 1996-03-26 1997-10-30 Mitsubishi Materials Corp Piezoelectric thin-film component
TW410272B (en) 1996-05-07 2000-11-01 Thermoscan Lnc Enhanced protective lens cover
US5780886A (en) 1996-05-30 1998-07-14 Oki Electric Industry Co., Ltd. Non-volatile semiconductor memory cell and method for production thereof
SE518132C2 (en) 1996-06-07 2002-08-27 Ericsson Telefon Ab L M Method and apparatus for synchronizing combined receivers and transmitters in a cellular system
US5863326A (en) 1996-07-03 1999-01-26 Cermet, Inc. Pressurized skull crucible for crystal growth using the Czochralski technique
US6023082A (en) 1996-08-05 2000-02-08 Lockheed Martin Energy Research Corporation Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material
US5746543A (en) 1996-08-20 1998-05-05 Leonard; Kenneth J. Volume control module for use in diving
US5987011A (en) 1996-08-30 1999-11-16 Chai-Keong Toh Routing method for Ad-Hoc mobile networks
US5912068A (en) 1996-12-05 1999-06-15 The Regents Of The University Of California Epitaxial oxides on amorphous SiO2 on single crystal silicon
US5864543A (en) 1997-02-24 1999-01-26 At&T Wireless Services, Inc. Transmit/receive compensation in a time division duplex system
US5872493A (en) 1997-03-13 1999-02-16 Nokia Mobile Phones, Ltd. Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror
US6211096B1 (en) 1997-03-21 2001-04-03 Lsi Logic Corporation Tunable dielectric constant oxide and method of manufacture
WO1998047170A1 (en) 1997-04-11 1998-10-22 Nichia Chemical Industries, Ltd. Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
US6150239A (en) 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
KR100243294B1 (en) 1997-06-09 2000-02-01 윤종용 Ferroelectric memory cell &array in semiconductor device
US5963291A (en) 1997-07-21 1999-10-05 Chorum Technologies Inc. Optical attenuator using polarization modulation and a feedback controller
US6078717A (en) 1997-07-22 2000-06-20 Fuji Xerox Co., Ltd. Opical waveguide device
US5962069A (en) 1997-07-25 1999-10-05 Symetrix Corporation Process for fabricating layered superlattice materials and AB03 type metal oxides without exposure to oxygen at high temperatures
US5907792A (en) 1997-08-25 1999-05-25 Motorola,Inc. Method of forming a silicon nitride layer
JP4221765B2 (en) 1997-08-29 2009-02-12 ソニー株式会社 Optical integrated oxide device and method for manufacturing optical integrated oxide device
US6002375A (en) 1997-09-02 1999-12-14 Motorola, Inc. Multi-substrate radio-frequency circuit
US6265749B1 (en) 1997-10-14 2001-07-24 Advanced Micro Devices, Inc. Metal silicide transistor gate spaced from a semiconductor substrate by a ceramic gate dielectric having a high dielectric constant
US6197503B1 (en) 1997-11-26 2001-03-06 Ut-Battelle, Llc Integrated circuit biochip microsystem containing lens
US6049702A (en) * 1997-12-04 2000-04-11 Rockwell Science Center, Llc Integrated passive transceiver section
JP3092659B2 (en) 1997-12-10 2000-09-25 日本電気株式会社 Thin film capacitor and method of manufacturing the same
EP0926739A1 (en) 1997-12-24 1999-06-30 Texas Instruments Incorporated A structure of and method for forming a mis field effect transistor
US6011646A (en) 1998-02-20 2000-01-04 The Regents Of The Unviersity Of California Method to adjust multilayer film stress induced deformation of optics
CA2268997C (en) 1998-05-05 2005-03-22 National Research Council Of Canada Quantum dot infrared photodetectors (qdip) and methods of making the same
JPH11330411A (en) 1998-05-13 1999-11-30 Matsushita Electric Ind Co Ltd Semiconductor storage device and its manufacture
US6055179A (en) 1998-05-19 2000-04-25 Canon Kk Memory device utilizing giant magnetoresistance effect
FI108583B (en) 1998-06-02 2002-02-15 Nokia Corp resonator structures
JPH11354820A (en) 1998-06-12 1999-12-24 Sharp Corp Photoelectric conversion element and manufacture thereof
US6191011B1 (en) 1998-09-28 2001-02-20 Ag Associates (Israel) Ltd. Selective hemispherical grain silicon deposition
TW399309B (en) 1998-09-30 2000-07-21 World Wiser Electronics Inc Cavity-down package structure with thermal via
US6252261B1 (en) 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
US6343171B1 (en) 1998-10-09 2002-01-29 Fujitsu Limited Systems based on opto-electronic substrates with electrical and optical interconnections and methods for making
JP3592553B2 (en) 1998-10-15 2004-11-24 株式会社東芝 Gallium nitride based semiconductor device
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6241821B1 (en) 1999-03-22 2001-06-05 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6248459B1 (en) 1999-03-22 2001-06-19 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6107721A (en) 1999-07-27 2000-08-22 Tfr Technologies, Inc. Piezoelectric resonators on a differentially offset reflector
US6479173B1 (en) 1999-12-17 2002-11-12 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
US6291319B1 (en) 1999-12-17 2001-09-18 Motorola, Inc. Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
US6268269B1 (en) 1999-12-30 2001-07-31 United Microelectronics Corp. Method for fabricating an oxide layer on silicon with carbon ions introduced at the silicon/oxide interface in order to reduce hot carrier effects
US20010013313A1 (en) 2000-02-10 2001-08-16 Motorola, Inc. Apparatus for fabricating semiconductor structures and method of forming the structures
US6313486B1 (en) 2000-06-15 2001-11-06 Board Of Regents, The University Of Texas System Floating gate transistor having buried strained silicon germanium channel layer
US20020008234A1 (en) 2000-06-28 2002-01-24 Motorola, Inc. Mixed-signal semiconductor structure, device including the structure, and methods of forming the device and the structure
US6224669B1 (en) 2000-09-14 2001-05-01 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63198365A (en) * 1987-02-13 1988-08-17 Sharp Corp Semiconductor device
US4896194A (en) * 1987-07-08 1990-01-23 Nec Corporation Semiconductor device having an integrated circuit formed on a compound semiconductor layer
EP0469790A1 (en) * 1990-08-02 1992-02-05 AT&T Corp. Semiconductor devices with low dislocation defects and method for making same
EP0875922A1 (en) * 1997-04-03 1998-11-04 France Telecom Etching-free technology for integration of components
WO2001059836A1 (en) * 2000-02-10 2001-08-16 Motorola Inc. Communicating device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"Epitaxial 3D Structure Using Mixed Spinels", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 30, no. 3, August 1987 (1987-08-01), IBM CORP, NEW YORK, US, pages 1271, XP000952090, ISSN: 0018-8689 *
FATHIMULLA A ET AL: "Monolithic integration of InGaAs/InAlAs MODFETs and RTDs on InP-bonded-to Si substrate", FOURTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, NEWPORT, RI, USA, 21-24 APRIL 1992, IEEE, New York, NY, USA, pages 167 - 170, XP000341253, ISBN: 0-7803-0522-1 *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 481 (E - 694) 15 December 1988 (1988-12-15) *

Also Published As

Publication number Publication date
WO2002009150A2 (en) 2002-01-31
TW523790B (en) 2003-03-11
US6590236B1 (en) 2003-07-08
AU2001276968A1 (en) 2002-02-05

Similar Documents

Publication Publication Date Title
US4896194A (en) Semiconductor device having an integrated circuit formed on a compound semiconductor layer
Hasch Driving towards 2020: Automotive radar technology trends
EP1054442A3 (en) Method for growing epitaxial group III nitride compound semiconductors on silicon
Robertson et al. RFIC and MMIC Design and Technology
WO2002009150A3 (en) Semiconductor structure for use with high-frequency signals
US4545109A (en) Method of making a gallium arsenide field effect transistor
US7268058B2 (en) Tri-gate transistors and methods to fabricate same
US5312765A (en) Method of fabricating three dimensional gallium arsenide microelectronic device
US4651179A (en) Low resistance gallium arsenide field effect transistor
EP1130631A1 (en) Process for forming a buried cavity in a semiconductor material wafer
US11355432B2 (en) Semiconductor device with patterned ground shielding
EP0528423A1 (en) Receiving device
CA2392041A1 (en) Pendeoepitaxial growth of gallium nitride layers on sapphire substrates
US11929364B2 (en) Parasitic capacitance reduction in GaN devices
McQuiddy et al. Monolithic microwave integrated circuits: An historical perspective
EP0575789A1 (en) Monolithic millimetre-wave integrated circuit and method of its fabrication
CN115667974A (en) Radar apparatus, system and method
WO2002045166A3 (en) Method for eliminating crack damage at interfaces in integrated circuits
US6183857B1 (en) Substrate for high frequency integrated circuits
KR20000004407A (en) Method for manufacturing thin film transistors
US7033438B2 (en) Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate
EP1049156A1 (en) Manufacturing process of integrated SOI circuit structures
JPS63239928A (en) Integrated circuit
CN110491827A (en) A kind of transfer method of semiconductor film layer and the preparation method of composite wafer
KR100466543B1 (en) Method of manufacturing a semiconductor device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP