WO2002011202A2

WO2002011202A2 - Method and device for producing connection substrates for electronic components

Info

Publication number: WO2002011202A2
Application number: PCT/DE2001/002892
Authority: WO
Inventors: Richard Thelen; Jozef Van Puymbroeck
Original assignee: Siemens Dematic Ag
Priority date: 2000-07-31
Filing date: 2001-07-31
Publication date: 2002-02-07
Also published as: TW531817B; WO2002011201A2; DE10037292A1; WO2002011201A3; WO2002011202A3

Abstract

According to a method for producing connection substrates for semiconductor chips, preferably PSGA (polymer stud grid array) substrates, a blank body (1), preferably a film, is heated and humps (3) and/or recesses are produced on at least one of its surfaces using an embossing roller. High temperature resistant thermoplastics, preferably LCPs (liquid crystal polymers), are used as the material for the substrate body. Their surface can preferably be provided with a metallic layer which is in turn provided with openings as an embossing aid.

Description

METHOD AND DEVICE FOR PRODUCING CONNECTING SUBSTRATES FOR

ELECTRONIC COMPONENTS

description

Method and device for producing connection substrates for electronic components

The invention relates to a method and a device for producing connection substrates for at least one electronic component each with a substrate body made of high-temperature-resistant thermoplastic material, the melting point of which lies above the soldering temperature used for the connection contacting, in each case in one piece at least on one surface bumps and / or depressions be molded on.

In particular, the invention relates to the production of a so-called polymer stud grid array (PSGA ™), contact bumps being integrally formed on each substrate and provided with a solderable contact surface, each of which in turn is connected to that on the substrate by means of conductor tracks arranged semiconductor device can be connected.

Integrated circuits, but also other electronic components, e.g. Surface wave filters and the like are increasingly miniaturized and at the same time provided with more and more connections. The problems of contacting in a confined space are solved with new housing shapes that are designed as single, Few or multi-chip modules. Substrates with a so-called ball grid array (BGA) are known in which solder bumps arranged flat on the underside of the substrate enable surface mounting on a printed circuit board or assembly.

The so-called MID technology (MID = Molded Interconnection Devices) uses three-dimensional injection molded parts with integrated conductor tracks instead of conventional printed circuits. In the case of such substrates, it is also already known to structure the conductor tracks by structuring metal layer applied to the injection molded parts by a special laser structuring process. Several mechanical and electrical functions can be integrated into the three-dimensional injection molded parts with structured metallization. The housing support function takes over guides and snap connections at the same time, while the metallization layer serves not only as a wiring and connection function but also as an electromagnetic shield and ensures good heat dissipation. Injection molded parts of this type with integrated conductor tracks are described, for example, in DE-A-37 32 249 and EP-A-0 361 192. From US-A-5 081 520 a method for mounting IC chips on substrates is known, in which the substrates are produced as injection molded parts with integrated bumps for mounting the IC chips. After the metallization of the bumps, a connection layer is applied so that the IC chips can be attached to the substrates, the chip connection areas being electrically conductively connected to the associated metallizations of the bumps.

EP-B-782765 has already proposed a so-called polymer stud grid array (PSGA ™) which combines the advantages of a ball grid array (BGA) with the advantages of MID technology. This design, which is suitable for single, Few or multi-chip modules, essentially comprises an injection-molded, three-dimensional substrate made of an electrically insulating polymer, on one side of which molded polymer bumps are arranged during injection molding, on each of which in turn a solderable end surface has an outer surface. external connection forms. Conductor tracks on the substrate connect these external connections to internal connections, which in turn are electrically conductively connected to the connections of a chip arranged on the substrate or another component.

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X "rt d P- P- Φ d d φ P-

P- P d DJ Φ PJ <Q Λ P- Hi p- O: P cn Ω iQ d d d Φ P er s: d Φ

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P Ω tr d P tr d cn S

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Ω Φ d N P- Ω Hl P- P φ P Φ Φ P d P DJ 3 Φ Φ o d iQ O EP tr d Ω P- cn tr φ X d CD:

P s: X rt cn d p- Pi • _^ d tr Φ J Φ φ

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Ω X ¹ 3 rt P- Ω the P PJ Φ d cn tr O: PJ 1 Φ tr PJ Φ Φ Hl P- PJ Φ Ω d Φ tr Hl H-

Ω Cfl P ^> PJNX P- t υa P- P- CΛ P ¹ P- d rt dd 23 cn rt d P- tr rt d Ω d Φ Φ Φ φ Φ p- dd P- PJ: N CΛ φ d α DJ Φ cn Φ Φ cn P os: P d φ Φ er Φ EP P- <! dd Φ Φ Hl P- X d Φ iQ X rt drd iQ d P-

P tr t Φ Φ cn rd P Φ d Φ P Φ φ Φ X ¹ 3 3 cn d P- cn 3 rt Φ Φ e

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Φ Φ rt Φ rt Φ P-Pi d * <j tr rt 13 Φ X "υa tr tr rt

Φ <QX ¹ rt P PJ φ cn Φ d P- JP PJ d PJ O: Φ <Φ X "d Φ DJ ddd Φ d Φ d ^» rt Φ d er P d P <Φ od O: cn d Φ 3 cn o- P o P ¹ p- Φ 3 S DJ iQ rt d CΛ Hi 13 O p- d P

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Ω N Φ cn Ω P- P- d P>: P tr φ Φ φ ιp tr o P "Φ cn PJ N d Hl P tr rt 13 tr Ω co o iQ P- α Φ d Φ 3 cn P ¹ iQ P - d Φ d X d iQ Cn

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Φ 1 X ¹ φ cn d P d CD: Φ P- EP er φ P 1 Φ ^ P- O •

P 1 d P- ¹ 1 X 1 1 1 P Ω PO l Hi

Φ P ^, Φ l 1 tr 1 hi

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Φ P- P- CΛ P- p- Φ d DJ Φ d

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(D: d cn d tr tr 13 Ω d: Hi d tr 13 φ er P- rt Φ P- Φ CΛ P- X ¹ Φ P Ω ua ^ rr «ds; p- tr d- ⁽ P« CD: φ Cfl φ d P- P ¹ Ω cn O: P φ tr rt πd o P πd dd P- 3 φ rt C-. Φ d: PP 23 Ω d α P ¹ P α tr 13 P ff d P-

Φ P p- PJ P dd P P- P ¹ dd Φ O tr rt DJ φ tr P P- P- tr φ Φ P- P- 13 d Ω d J: P- rt tu: cn <P p rt cn dd 3 PP "Φ rt P- d P- φ DJ rt Cfl Ω φ Φ d tr and others x- υa rt:> ιp ι P. φ dd tn P- φ o cn H) tr P" P dd rt

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P 13 er ^• d 1 O ιp 3 d P- P Φ tr ^ P tn d P- P d = IX P φ 3 rt P

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X α P "P" Φ including d Φ * _* d P 3 Φ tr Φ 13 dd rt DJ P tn

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Φ Φ Φ Φ PJ rt φ Φ N a Φ cn P CD: DJ p- P- h- ¹ d rt N d

P Φ P- 3 Φ P d NPP φ P. X ¹ d Ω P "rt d Ω N rt o Φ φ d Ξ tu

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CΛ P Ω cn H) ö Φ tr s: P- CD: d Cfl P tr CD: ιP cn α φ P vP O Φ Ω Φ

Ω DJ tr PJ d = PP φ d tr rt d φ Ω φ ιp Φ H- Φ Φ dd tr d tr dg φ d N tr φ Φ cn P φ P P- P Hl cn Φ tr d Φ P d Ω d Φ Φ

Φ cn Φ P cn Φ P tr d φ 3 Φ d DJ cn P φ er φ - Φ P

3 rt P- d P Φ d d rt Ω πd X cn P- Φ P Φ d Φ N

DJ φ DJ ö P. iP d P- cn er d 23 P. Φ Cfl tr P PJ = J O P d o d o d rt P- * PJ φ rt a O Φ cn P- P 3 CD: P d P Hl DJ α P d 3

P- d P ¹ PP tn tr cn rt X α P tr φ Φ IQ 3 Pi PJ Φ P- d 3 iP πd Φ cn φ er Cn er rt Ω O: Φ Φ DJ P Φ Φ iQ d rt d Hi P, P- Φ P P- tu

Ω P Φ rt * d Φ d tr cr d P ω N N <! d φ> PP <P DJ rt cn DK d Φ tr cn Φ o P- d X Φ d er P- Φ o CΛ Φ d φ d φ ιP DJ P- φ * d Ω P "ω and others p- X Φ DJ Φ d P o 13 O P- d he tr t tr Φ d cn

P o tr P "P- 13 d φ d ^ P tr ¹ ^ P P. DJ P d ιp P φ DJ Φ cn P- 13

P- d Φ P- N P i • Φ P Φ rt P. PJ φ d p. cn DJ d d Ω Φ P- ö P- o d Φ d P- P o P φ d P d d P vP Ω cn fD: tr P φ

DJ φ tr <P <! P- P P- ü P "X tn ιP rt φ φ φ tr Φ P ¹ X P- P-

P rt o φ X ¹ Ω P- DJ P "23 Φ Cfl PJ Φ rt P 3 rt cn Φ φ Ω d cn and others ddd 23 Φ tr Φ d φ PJ P CΛ er d φ CD: Φ rt d P tr d N rt φ d DJ P- P "d P" P d Φ X "Cn d EP d DJ P. rt rt α d

Ua 3 including I- ¹ DJ cn W P- tn N φ er P- d = • X) Φ Φ H φ Φ P ¹ DJ: d N "* • Φ Φ φ Φ d 1 d tr P P- Pf d πd rt dd 1 EP 1 Φ P- P- iP P 1 CD: dd P d • <ι od N rt Φ 1 1 CD: dd 1 P 1 ι

3A is a film similar to Figure 2A, but with some wandelter abge ^¬ metallization,

FIG. 3B shows an embossing stamp and a substrate body embossed from a film according to FIG. 3A, each in a schematic representation,

4 shows the schematic representation of the production of a substrate body provided with bumps from a granulate by means of an embossing-rolling device, FIG. 5 shows the production of a substrate body provided with bumps from a film by means of an embossing-rolling device,

6 shows a schematic section through an embossing roller designed according to the invention with an embossing layer covering almost the entire circumferential area, FIG. 7 shows an embossing roller in a configuration modified from FIG. 6,

8 shows a further embodiment of an embossing device designed according to the invention, FIGS. 9A to 9C show a section of an embossing roller according to FIG. 7 or FIG. 8 in different phases when embossing an uncoated substrate film,

FIGS. 10A and 10B show the detail of an embossing roller in two different phases when embossing a substrate film with a standard metallic surface coating,

FIGS. 11A and 11B show a section of an embossing roller with embossing layers specified as standard, shown in two phases when embossing a substrate film, on the surface of which a metal coating is specified as a mask; external heating and cooling devices are generated, Figure 13 is an embossing roller with a heating device arranged inside and

FIG. 14 shows an arrangement with an embossing roller and a narrowly defined melting zone. co co tv> M l- ¹ P ¹

Cn o cπ O Cπ o Cπ

P- PO tV) Φ 3 tr P cn P φ: J Hl er N! P. o tn α P DJ 3 φ co Pi ^ PJ X ¹ p. ia ESI ddo er> PO: P- O P- Φ p- er d Φ d O Φ cπ P- 13 d Φ d P- P d = O d DJ Φ ddd P Φ N Ω d P d Φ = P- P ¹ do Ω P- PP tn rt 5 ia P P-> d PPP

P. ua 3 PP Φ P ^> Hl tr φ P * 1 Cfl 13 P- • o tr φ Ω ua rt CD: Φ P- ^ dd Φ φ Φ Hi φ d P- Φ a P P- cn Pl P φ o Φ P "tr ^ d φ Φ P 3 Φ P- DJ d Cd dd φ P ¹ ia a Ω d> d P ia P- Φ CD: d cn o DJ 3 CD: P- ia d P

P- CD: Φ Φ tr P dd rt g Φ d ia 3 and others 3 & φ X Φ HP n rt EP φ d Ω P ¹ P ¹

N Cπ d Ω d P- P cn Φ φ PP d 13 φ P- PP g φ p- P- er "" P tr DJ = d Φ tr 3 φ ω P rt d φ d rt φ X PJ P- d Φ Φ Φ * cn er d

Hi Cfl Φ CD: P d DJ 5 tn DJ α tV) and others P • P fD: rt co Φ P- P- cn P- Φ er P ¹ DJ P- rt tr Φ EP ö d φ d PJ Φ J> PJ Φ φ P Φ φ X rt do ia 53 Φ> P "cn Φ

P- cn πd P P- DJ P d Hl P P- HP PJ rt P- P 3 P DJ PJ φ Φ d P- P- cn P p <rt P Φ u Ω d rt P- cn P- er d tu d cn rt P- X dd rt cn P. P dn P- od α and others CD: PP tr P d Φ cn rt cn P φ Φ Φ DJ PJ P d Φ DJ du cn and others d P- CJ φ and others P- Φ rt o φ x- 3 P- d P ¹ d Φ d hd EP P ¹ d P- rt gd

Φ Φ J. ud P- Φ g PJ Φ Cd φ P Φ <φ P ¹ Cπ d DJ rt dd P er P tu d φ co φ

P Φ ω Φ Ω PX d Φ PP ¹ Φ od CΛ cn P er 53 Φ <CD: P- and others ι-> cn Ω XP

Φ ua rt rt tr X φ o P d d P- o d: d rt Φ P φ P- Φ ua tr p. cn Ω tr φ φ d rt Φ DJ d CD: P- er 00 tn d d d O. er rt Φ P- α tn p- P- cn P φ P P- Φ 5 tr d P- cn

3 P- ¹ Φ cn P Φ Φ and others Φ Φ 3 tn J rt φ rt 13 rt cn Φ P- Φ Φ P-

CΛ 13 P- tn 3 cn P <tr tn er P P- 13 rt d Φ P- P- P- Pt rd gdd P- 3 rt cn Φ d DJ φ cn d 13 Φ cn O Φ tn d P- Ω Φ d tr ^ ua φ Φ Φ DJ Φ Φ cn DJ rt P er d P ¹ Ω Φ DJ d P- φ P d Ω o O cn tr P ¹ Φ rt o P ¹ Hi 3 rt d tn Φ rt Φ Hl cn cn tr 3 P 3 p- among others tr d P ¹ Cπ cn 3 <ι cn d 15 Φ P- Φ P- P- rt s; P- dd rt Φ P- P- P- *. o X P- P- o 53 d Φ P cn CΛ DJ tn P- dd

P Φ «3 Ω dd tu Φ cn tn Ω ^ d φ o 0 φ PJ rt DJ φ P φ and others ¹ P- O dd Ω d α

DJ tr o ua P. φ Φ rt tr P- o OP Φ dd ua P- Φ Cfl PJ er cn tr φ Cfl d rt Ω ua rt P φ P tr • rt ua P> o α P Ω Φ Pi Φ cn d P ¹ n P. O d ¹ tr φ including d πd Φ P Φ dn er Φ tr P- X cn φ j≥. , rt tr ¹ P- tr and others

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Φ CΛ φ er P- Φ P. P d Φ ia M o ia φ d P φ s: φ X ¹ d ia rt 3

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Φ P- rt d P- d φ d er DJ d O rv> P- PJ l P- tr o Ω p- P Φ P 53 cn EP

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Φ PP d P φ 3 Φ PP cn • α n _^ Φ 13 PJ P- Φ φ d Φ P P- tr N Φ

Φ d rt tö Φ P rt Φ Ω X d Φ d isi d d φ 53 3 tn a d Φ P Tl

P tV> PJ ö d and others PJ o P tr φ CD: er P P tn d P P rt P- P

N rt tu M cn DJ d CΛ Φ * er cn P- tr P- p- CΛ PJ d CΛ 53 P CS! (VJ rt PJ hd P-

Φ PJ P- rt PW tn Ω N - Φ φ ua Ω d cn φ rt rt iT ua rt φ hd P 53 rt d P dd rt dd Φ cn O cn tr Φ P- P P- Φ tr P ¹ Φ do Φ PP φ 3 α ua DJ: N ua 01 d P rt d 13 P- P- cn tn rt N P- co d 3 P hd Φ 3 P (D: d Ω P- P- Φ Φ ua P- rt CD: ^ Φ rt PJ Ω ia P- φ P- Φ Ω o P- 13 P 13 φ ia d X ¹ r Φ P- cn Φ 13

Ω = J P tr rt Φ P- a P- X tr o Ω Φ <J O Hi Φ d φ P. d φ cn tn

53 tr tn X er P ¹ X ¹ d rt Φ P rt ia C: φ o tr o P o P ¹ XX «DJ Φ tr rt φ ¹ φ P- Φ d rt ddd Φ 3 rt tr n rt d φ P ¹ DJ p- O * Φ Φ P-

P P- P- PP d tr and others σi d P- P gu P and others ω o p- P d cn W d cn α Ω d and others O: t and others d rt Φ DJ Φ <! φ P ¹ Φ φ P- N Φ P. rt d 13 rt -

Φ tr φ P Ω 00 DJ φ cn d P. d rt P o 13 r Φ d φ Φ PJ dd 53 Φ d α P- X P- tn P ι_ι. p- P. Φ XPP o P- er tu X ¹ O tn φ P- tu ^ d φ o Φ P- cn cn O Φ φ P CD: ua Di: od tn Cd d O: P- rt tr rt P d cn O: d P d P CΛ 13 tr ^ JXP P- P Φ π φ tu rt P d Ω Φ tr X "tn and others o Ω Cfl Ω u rt πd P- P- Φ and others P- DJ 3 tr rt 3 Φ 53 X "O: 0: rt φ Φ P.

P- x- cn tr Φ TI OP Φ Ω DJ P- Φ φ P- rt Φ er P- 0 (D: Φ ^ Ω P 0 d N Φ -> Φ 13 Cfl P- Φ SD: tr d P "and others P- P- X P- CD: 1 PP P. POX "13 Hi φ d

Φ PD ⁾ P DJ ao N cn ao rt Hl cn Φ <Φ P- N φ cn tr Φ Φ Hi P- d 1 P- 3 PJ P "Φ d φ d Cfl rt P d PP CO P- PP 1 v O 3 dd Φ l_l. Φ

Φ rt P 1 φ d 1 P rt Φ 1 1 d P- φ d rt P- Φ 1 1 and others d 1

FIG. 3A in turn shows a film 1 with metal layers 6 and 7 on both sides, but in contrast to FIG. 2A, recesses 8 are now only provided at the locations of the top layer 6, at which a bump 3 is actually to be produced. In this case, according to FIG. 3B, an embossing stamp 11 can be used, which has embossing recesses 5 in a standard grid, since in this case the metallization layer 6 serves as a mask and only allows embossing of bumps 3 where recesses 8 are provided.

If, instead of bumps 3, depressions are to be created in the film 1 by embossing, this is also possible. When the foil is metallized, the recesses to be embossed must then be selected using the embossing stamp.

For practical dimensioning, it should be mentioned that, for example, films with a thickness of 0.1 to 0.5 mm, preferably of 0.2 to 0.3 mm, are suitable for the production of PSGA ™ substrates. Solder bumps with a height of 0.02 mm to 0.4 mm and a diameter of 0.04 mm to 0.5 mm are then produced on these foils. A range between 0.2 mm and 1 mm can be used as the grid dimension. The metallization of the film surface described in FIGS. 2 and 3 can be formed, for example, with a copper layer of 25 μm.

The further processing of the substrate bodies 2, 10 or 12 thus produced can be carried out in a manner known per se. The bumps 3 are preferably used as contact bumps and are provided with a solderable contact layer 13 for this purpose. These bumps 13 are connected to the connections of the semiconductor component or other components via conductor tracks 14 (FIG. 1B). If a metal layer 6 is already present according to FIG. 2B, this metal layer can subsequently be structured into conductor tracks 15, which in turn are then connected to the metal layer 13. It is co co rv> IV ⁾ I- ¹ - ¹ cπ o Cπ o cn σ cπ

Pl DJ rr P CΛ d σ a rt Φ PJ J tr ¹ 23 rvi Hl Φ ua rt PJ Φ 15 P- X er 13 23 P PJ g PJ

Φ d Φ P- Ω Φ JP P- P- - d φ P- DJ rvi d: P- Φ dd 3 P- P ¹ d φ Φ Φ p- Φ d Φ er

M Ω d d tr P o o d cn P Ω P "tr d N d D d J P- P P φ P Hl rt Φ

13 tr ao P- rt d EP d Φ er INI tr N 3 P Φ Φ ao i- rt φ cn hd P ¹ P ¹ PJ P

Φ N φ Ω tr P Φ PJ hd Φ d <P- rt tn P- P- d = cn rt P- cn P- EV> P- ^ P- l- ¹

P ia d tr Φ Ω PP ¹ OP cn Cfl O rt ia 3 ia P 3 ia Φ IV) do φ P "3

DJ Φ P Jö rt P tr φ P CD: 0 rt PPX rt P- d cn d <ua d P cn O: rt ua d: Φ 3 "Φ ad φ P- P t H- O - • rt P P- P rt P φ Φ φ ^ d rt Ω and others d Φ ι cn d p- cn P> CΛ P Φ P P- Φ P- O: PP Ω J Φ P d P P- PJ α tr P ¹

P d O rt Cfl P- CD: Ω 53 φ P ^J Ω Ω P 53 φ Cπ tr d P rt P. Hi et al. X ¹ PJ p- P-

Cfl Φ PN Ω d Ω tr 3 Φ P Φ CΛ tr X Φ o P- d P- P- Φ P- d rt d Ω Ω rt P- 3 Φ φ tr α tr P- Φ P cn dd rt Φ Hl er d P- 3 P ⁾ Φ dd P CΛ d tr tr

Ua d ia P- P- Φ φ Ω tr X ¹ er d P d 0 Φ φ Cfl d PJ Φ Hi P Ω rt d PJ Φ rt ddd tr PN <! cn dd 3 P P- P rt P rt N d 23 d tr tr ¹ φ d er Φ Φ P3 d DJ rt Φ φ O rt and others 3 Φ N Φ d PJ d P- Φ D 53

PP dd P rt d Φ P d PP CO: rt P- hd P- P tn d P- ia P ^J ia 01 Ω p- P- d Φ d Cd Φ Φ cn d Φ ia rt PJ ia er Φ d P d PJ P a Φ α 01 Ω tr rt N φ d P and others 3 dd PP Φ rt Φ <! Φ d CD: cn IV) rt d Φ and others tr rt Φ d and others O: rt d φ <P- K 3 Φ PP and others Φ σ dd Φ Φ P d P rt and others d DJ tr N cn Φ -> O: CD: P CΛ P- Φ P- QP P- N> 3 3 P ¹ N CD: d

P- tr er P "d: d d d d Φ P tr P EP PJ P rt Φ X d P N cn t) CD: DJ co Ω

3 Φ Φ P- Hi and others P d 3 tr X PJ 13 P P- P Cfl PJ Φ PJ Φ Φ rt- co EP rt and others tr ^

P P Ω rt Φ d P φ Hi Φ ** 1 er Φ J φ H P d P d N P- PJ Φ 01 p-

23 3 Φ tr d N P ao t d rt P P- Φ d 3 N d ao d d = tn d rt ao

Φ P- Ω • d 53 Φ Φ PP Φ ia P- 23 Φ! JJ 23 d XP d er Ω Pi P ¹ d

P cn X ¹ and others P- 3 DJ P- d: φ P tv> d rt PJ 13 ^ r PJ PJ d P- P Φ tr and others -J Φ P x- Ω rt 53 ω d tn d rt MP φ P PJ t ⁾ 53 rt ia P d P φ P-

N tr φ P Ω Φ Pi 13 d Φ rr N o P- CO PJ N P. P tv> ua rt ISI d O φ P- d Φ tr P- P- φ dd P->&><Hl d P. <N cπ Φ Φ P d φ tu, _, d P- tn P Φ d P Φ Cfl d NO P- d P. d O Φ er φ P- NJP and others tn rt P. d φ Φ P ¹ Pi 23 and others od P ¹ P. d PP cn Φ d Φ d Φ and others H cn ^

O P- tu 3 O DJ Φ Φ P P cn DJ P. d Ω P P- and others P Φ P- Φ «01 Ω

3 P "φ o 23 o N P Cfl P- Φ 53 P- cn d tr P- CΛ d N and others d o O tr

O: P- P ¹ tr J 13 23 d 3 N rt d P φ Ω er φ ua Ω dd Φ 23 rt d ¹ Φ ua φ PJ 23 rt DJ P ua Φ PJ φ P tr N PI P- W tr er P - including the DJ 53 rt P- 3

P tn J Hi N P- Φ P ¹ 3 ** 1 P rt 53 tr d 53 Φ rt 01 Φ ia ^J P- φ D Φ PJ

P- φ tn o Φ 3 N rt er er rt P- φ d Φ φ P- P- d rt 01 α rt N tn PX ¹ P rt

Ω d Φ NP DJ Φ tr Φ Φ d X ¹ and others dd PP φ N d P Φ Φ rt rt cn P- tr ~ - d Φ 3 df ~ - d Φ d cn dod and others φ 3 P. φ and others PJ 3 PO Φ P- Ω cn

Φ d Φ X ¹ PP rt and others d P P- o and others φ d rt 53 P d Φ tr Ω

P- cn tn 3 d P θ: 3 Φ Φ rt g N d 15 HP IV) X tu tu o P 53 • P P- tr n O P- P- g P P- tr P P- Cn P- d φ PJ d CO O: Φ O: er P- P- d Ω rt Ω rt P- Hi DJ 13 tn o rt Φ d rt PJ rt 3 φ P P- Ω Φ Ω P d tr J

• P. tr 3 d rt Φ Ω P P d P- P cn rt P 13 01 x- P- tr P ua rt d

PJ 3 d Φ P tr Φ P P- cn Φ Φ ^ rt Φ Φ Pi IV ⁾ Φ 13 Φ rt and others

EP P Φ 23 XP φ P P- Φ Φ rt P- 3 o 3 d P- H- "Cπ P P- PP d Φ l- ¹ Φ

P- tr φ rt P- DJ d Φ PP d \ -> DJ dd: cn Φ P- d P- Φ C P. φ φ PP P- DJ d PJ Pi Φ Φ co P- rt cn φ Cfl NM CO Φ among others d P φ

P- Φ X ¹ O ~ - Hi P3 dg P- P- tn P d φ Φ Φ cn d J PJ dd CΛ PN d DJ NPPO: d Ω er P ua 23 P- ua tv> P. er 23 3 CΛ W d rt φ φ Φ Φ DJ dd Φ Φ and others P tr tn Cfl IV) P- Φ PJ and others Φ DJ Φ DJ P- d O: Hl Φ and others dd tn Cfl d P d Φ o Φ rt I- ¹ DJ d rt Hi P- 01 tn P ¹ rt er Ω N rt ia 3 «a Φ 53 13 d Φ P- dd 3 PPP ¹ 53 N: d P- N cn x- d -»

Φ Φ CΛ d DJ J d Ω ia P- PJ PJ N PJ <5 53 tr PI rt Φ ia rt Φ er

N d φ d tr d d Hi tr Cfl hd rt P rt d P- P "O φ P ^ tr N Φ P P P DJ

P- rt ao d d ao d X "ao P etx- ao d N P P rt O Φ rt tv> ao PJ P- d

Φ Φ 3 P *> Φ d Φ Φ O 3 P- O: Φ Φ PPPP • O Φ rt CO d Hl φ d X P- 3 NO: ia P 1 ^ P- φ 3 3 d X ¹ u rt d ia Φ • 1 rt CD: Φ ua Φ 15

1 3 o tv> Ω d o §! l_l. d-- O: 3 Φ P φ Φ P- p- EP EP 1 d Φ P Cπ tr 1 φ 1 P P- d φ

1 1 rt P 3 Φ 1 1 rt P

co o rv> tV) P> P ¹

Cπ 0 Cπ 0 Cn 0 Cπ cn CD P ffi P d cn h φ tu N 01 53 tu P 01 Pl 53 <! 0 23 ¹ P- W Cπ Cπ ^h d DJ P 01 hd t < ^h d

Φ PJ CD: Φ d P- P- P- φ Φ φ rt P- 0 Φ 13 φ DJ 0 P PJ P- d Φ ro P- d φ Φ P P- 0 P- cn rt P ¹ P P. d inter alia d P EP 01 PP tr 3 P- 3 P "P α P ¹ Ω P- inter alia 01 dd CD: P ¹ inter alia

Ω Hi d Hi d P d φ φ N PJ P ¹ φ ^• d N ao N tr P dd P ao Hi P- d tr Φ P rt 3 cn PP P- Φ P rt 53 P ^< Φ Φ Φ d φ Φ Φ dd PJ P φ tr ¹ d φ Φ 53 P

53 01 N Φ ω J Ω P- 0 CD J P cn d P P d P. d P- Φ d 01 PJ

P- rt O d: d co <! tr rt rt Φ 53 P ¹ d Φ DJ Cπ φ ua rt Pi 1 Ω ua Ω Φ h- ¹ CTl d 01 d er er Pi 0 Φ Φ P- P P- N P- rt P ¹ tr φ tu <Φ Cπ tr P- tr P- N

P. rt Φ cn Φ N N d Φ 53 P Φ 53 d d φ <P Φ 0 d CO P. N φ Φ P> P- d Φ N

P- Φ d cn P 53 φ Φ P DJ: P Φ φ P d 0 Pi P Φ φ d P d Ω Φ Φ and others tr P- P- 5 DJ N Φ P Cn P ¹ NX • d O Φ I- ¹ d DJ P P- d cn tr cn>&> P-

X ¹ φ Φ dwd and others DJ 01 dd 3 PP ¹ Ω! UO CD: P- Ξ dd φ and others φ d rt P ¹ and others

Φ d d d Φ <T) φ rt cn P rt P- tr φ d tr Cd) ao Ω PJ P- ao d rt ao g Nj rt

P- P rt P. P- PN φ φ Φ φ 3 Φ P- Φ P 01 O rt tr φ ffi Φ φ J φ P- rt tr P "Φ Φ d P d O P- PN d Φ d Φ N tu 0 ö Φ DJ: d rt IV) P- 3 PJ

DJ DJ cn d d tu P- • P P hd rt N d P Φ Φ Φ P 3 P- P J P- "

P d P "-jdd O d 01 Φ 23 Φ PNO DJ p. 0 d P- <Pi P. Pi d rt 0 HX ¹ φ CΛ 01

Φ ua rt rt P. tr φ P- P- Φ P CD: P 0 dd rt 01 0 ua φ d PJ Φ Φ PP ¹ PJ 01 Ω

Φ Φ X "φ Ω Ω P and others Φ d Φ Hi p- P- d rt d Φ 01 φ d Φ d tr φ

DJ 0 d DJ dc 5 53 tr tr X ¹ DJ φ P Φ ua d Φ d 3 rt rt ia DJ JP dd P rt P d Cn DJ φ - Φ N er cn Cπ Φ d P rt er DJ DJ: P- er d N co p-01

P- P. d d der P- P- X d Φ a Ω hd P Cπ er Φ rt Φ Φ d EP and others d P- and Pi PJ d Φ rt rt

<d d Φ P- N rt Φ d Φ tr P Φ DJ P P P- EP d d d Φ s: d 3 P- P- rt Φ

Φ P er Hi d Φ φ 01 ia x- P- CD: P d d tr tr cn Φ d d P 53 Ω d d 01

N rt Φ Φ P Φ Cd rt: Ω ia d rt PJ P- Ω P d P- ia N PJ P- tr t φ d ia p- cn N cn d P Φ tr tr Φ PP ¹ Φ tr Φ ia 01 s : 53 d cn Φ φ DJ

P 01 Φ 01 rt he &

53 p * DJ rt X P- (- ^■ rt tn 0 XP P- P d X "P- Φ P φ DJ P- σ P- dd

Φ ia 13 P- Φ er P "PJ: P ¹ rt Ω rt φ Φ Φ d P Φ Φ P- φ dd 01 P- d Hl 01 t P- Φ p- ia P- l_l. Ia P- P 01 • d tr P- P- P p. d P tu Ü: P- 01 13 Ω φ Hi odd Φ rt φ Φ Ω 3 d P- Φ d P Φ d P "0 3 WD P ^> P- CΛ rt P- X ¹ PP d = tr • CΛ rv> d = 53 53 tr d 01 0 P Ω P φ φ PP P- tr φ 3 Φ Φ including PJ φ φ p- tr

P- ¹ O er 01 Φ Φ DJ d P- d tr Φ d Ω P- Φ ua Φ d Pi φ P

53 P. Φ 53 α Ώ P- d 01 and others d P 3 rt d 53 P tr 53 Ω P- cπ <! 3 23 er P. <! φ d

PJ Φ P φ Φ 3 P- P. Ω P Ω P- P & X ¹ PJ Φ Φ PJ tr d O Φ PJ P- Φ ≥; O P- φ d

P P- P Φ Cfl φ tr d tr rt Cπ Φ X "O: P ¹ PPP" φ P d P P- d P- and others

N P Cfl d P- d d 53 tv> d: d N N PJ DJ tr r N P. φ Ω d d 01

Φ tn Φ φ t rt N rt Φ P φ α P- 23 tr d Φ CD: P Φ d P d Φ Φ φ Φ d X ^* cπ d φ er

P- P Φ Φ 53 φ P "01 P- tr er Φ P- Φ d Φ φ Hl P d rt φ 0 rt Φ rjϊ Ω d P d Φ φ Φ PNP dd J EP 3 and others P 3 and others 23 hd P -

P ¹ tr P dd P- 23 Φ er d 53 X ¹ d X ¹ Φ 13 Φ Φ 13 Φ Φ LJ. d 01 Φ ^" d PJ P tn

0 rt DJ PJ PX rt u P • N ua rt P Φ 3 d φ 01 tr Φ pj: Φ P 0 3 d pj: 13 er 3 rt Φ P d hd * 0 P ¹ Φ PJ Φ 01 P- P- Φ P DJ: P 13 Φ 3 P- X "α Hl a P-

Φ P- P- P Φ ia P N φ tr P- P 01 Cn d N 3 <! P- EP Ω P- DJ d Φ d tn Φ er ua Φ

53 rt Φ 01 P Φ CD: φ PP ¹ Ω P- co and others 0 m Φ Φ Φ d α P- P- • rt P P- Φ 01

Φ P Ω O and others • P d tr d N »rt d <! d Φ P d ia P d Φ d Ω O 01 cn Ω ia Φ φ tr 23 P φ φ d ia d φ Φ 0 d P- d P- Φ d rt d Φ tr Pi «15 tr tr

Φ P- d p- DJ α cn H P- and others P Φ <! H- P rt d ia dd Pi d N3 DJ p- P- dd P Φ d Ω d Ω Φ P 13 0 P ¹ Cπ Φ ia d P "ia 01 hd hd Φ Φ 13 O d Ω Φ

• Φ φ P- N Φ tr tr P P. Φ P P cn P- P 3 P PJ P- PJ P P- d Hi O d tr P

P d P "Φ rt P- P Φ Φ d CD: er • Φ tn P- P- and others dd P ¹ SD: d _^ Φ O rt rt Pi

INI P- Ω P- d PN cn and others Φ DJ and others Ω rt 3 P ¹ Φ d P. and others Φ P d:

53 DJ tu Ω 3 d tr Φ P- Φ φ P- cj Φ tr 0 P rt φ P. ^• r ^ p- P

P- d 0 tr P- d rt 01 PJ Φ Φ 01 d ua 01 Φ d p- M d φ d = tn tu P- er 3 cn> ω P tr φ rt P. Φ φ P- P DJ P Φ OP Φ φ d Φ P 23 er O 0 Φ N rt Φ

Ω Φ H d 3 01 d rt 3 φ Pi d Φ PP d P- N cn CD: Φ tr tr 53 DJ • 3 P- tr P 53 Hl 01 53 N Φ rt d = P DJ d Φ dd Ω tr P P - "φ er d p- d φ Φ DJ φ Φ P- CTl h Φ 3 CΛ tr P- Ω P- tu P Φ tr P Ω 53 P- Pi u rt Φ dd P ¹ 1 P- Φ tv> DJ Φ P ¹ hd DJ d P φ tr tu Ω 0 φ p. P- φ tr DJ d P. 5 P-

N * dd 1 ¹ P- d P Cfl er rt 1 Φ tr tr dd Φ Φ d rt P- "φ φ φ φ φ Φ Φ P ¹ Φ O cn 1 P- Φ P-" PPPN 1 P- 1 ddl Φ 1 1 1 1 Φ 1

co CO IV) IV) P> P>

Cn o Cπ o Cn o Cn

53 P 01 Cfl and others P ¹ tn 01 d <01 PP 23 53 23 tu P- er Pi 01 P- tn N 3 tr 3 rt <hd 23 er d P φ P- Ω Ω Φ IV) 13 P- P- Φ φ Φ φ Φ o φ φ 3 Φ Φ rt 01 13 53 d P- P- Φ od P- Φ d φ

P- φ tr tr d tu P- φ ia PP d P- P. P P- tn P rr P P- dd rt ddd Φ 53 P tn P- P- 53 φ d cn 23 rt d X ¹ <O: PJ P- tn and others X "φ rt P- Ω Ω PJ and others P ¹ P- P rt φ g tu Φ PN Φ φ d er rt φ rt Ω P- tu P- ö rt P- u Φ tu

• d tr tr P ¹ Φ 01 d O P- DJ P- P Ω Φ P- PP Φ Hi er N tr cn P- d P P- d rt P- 0 d rt rt NN 53 U3 13 01 rt P ¹ tr tr dd ua Φ PO Φ rt Φ er rt d O d tr α φ φ Φ φ φ ^h d Hl φ P Hi P- ua φ P P- d Φ d Φ Pi Φ Ω d ^h dd Φ P ¹ d P cn d P- P- P- rt P- Φ d Φ P Φ Φ Φ P- Hi P φ Φ P- X "φ p- d P 53

P Φ tv> among others 01 among others N Φ X ¹ N P- among others P- P P- Φ PJ P- P- dd among others P PJ

Ω cn Φ rt φ d Φ O: Φ P tn d Φ Hi Ω d P ¹ P ¹ p- Φ d Φ φ dd cn tr hd er tV) er P P- dd P- P- O: H tr <Φ cn d: Φ P- φ P- Hl P 53 Φ N

P Φ P- P- ua 0 d Φ d φ Hl DJ- "0 u> cn cn dd Cd rt O DJ: ua Φ SJ CD: cn d ^J cn φ 00 rt P Φ NPP Pi Ω NP Cd cn hd Φ DJ Φ d P co tr Φ d ia P- d P rt ia 3 dd <tr d tr d rt P- d 3 P- P d XP rt o ia P d cn

01 φ rt P- Φ φ ua Φ φ P o P- φ Φ P- Φ dd o-- ua D: rt p- P Φ 53 φ P "P ¹

PJ cn N rt d Φ P-. P "er P" d er rt among others Φ P- 01 P among others X among other things P- d d = φ 01 φ d DJ

3 Ω rt cn PN d Φ Φ hd HP ¹ Φ P- M 13 \ Φ Φ Φ <! P- Hi P Φ P- P u er tr co X DJ φ Φ Φ 3 P- O CΛ ^h P- ddpo P- P- 01 P φ Ω rt tr rt Φ N φ P- P φ 01 P- P- d Φ 01 P rt P- Ω er Φ P- P Ω rt Ω P- d ^* d Φ Φ P 53 d Ω Φ <i P d ua d 13 3 CD: ua tr Φ 3 P rt φ tr tr Ω rt d - ¹ d P φ C •

X tr φ P 23 rt rt P- and others d d d & Φ N P • 3 P- tr d and others d tr 01 co

P- rt PJ P φ P- 23 d Φ φ Φ P P and others Φ o Pi P <P- Ω rt rt and others 01 01 X P- P-

P rt ao d P. P- p- cn er P- φ rt P O P 23 rt tr Φ Φ φ N 01 φ d α 53 tr

X "cn P- P • Φ P. 01 01 X ¹ cn d ua 00 PNP CD: 3 P φ φ rt rt PN o P- P d P- P φ co <i O: P φ rt Ω O 53 d X P- rt d Ω P- PP P-! U Φ 01 φ d ao P. u. PP φ d EP HP "P • tr d φ ao φ tdd tr rt P- rt P- cn d rt P- φ x- Φ Φ Ω d

X ¹ among others J d J P- d rt P- P- PJ among others dd P- Ω 23 Φ tv> d = among others φ d N tr

P ¹ PP and others DJ o α P- P- 01 d: rt 3 Φ d and others P tr PJ P Pi rt r P- P- φ P ^J Φ T) P ¹

Φ φ rt Φ ia P- rt d φ er φ P Φ Φ rt P "tr Φ er ⁾ N φ 3 rt P- DJ P- P co

P P- EP P- P φ Φ rt d Φ PP Φ 3 d P d N P- NH "dd er ia dd CD: d Φ ia P P- P7 P φ PJ PP: d Φ d Φ 53 rt d tu d Φ rt Hl φ and others φ J d X ¹ hd DJ Φ Φ X 01 01 DJ EP hd <and others P- H ¹ and others Cd φ d P- 01 Φ

Φ P> P P PJ cn P d P 3 DJ σ d rt P Φ cn P- d d P- P r 01 P- N 01

P- Φ d and others d co CD: Cn 13 Ω -jdd Φ CD: P 1 P ¹ 01 Φ cn Hi d φ Φ 13 01 and others d Ω cn Φ <£> d and others P- φ tr & IV) P and XP ¹ rt P ji. rt Φ 01 P- P P- rt Φ tr

Φ d 01 tu φ Φ Ω P rt P Ω 53 N φ φ 3 01 P 13 Ω Φ 15 13 P- dd Φ rt CD 53 53 P- tr DJ P d tr P- d 01 d 3 P- Φ Cd d rt P tr P- PP Ω

01 tr Φ 01 er P- PJ d rt X d d 01 φ rt P O: rt P- P- d P P-

3 P- Φ φ - ¹ Φ d: d φ Ω α DJ P. P φ ddd P. O g P- 01 X ^* pj: p: tr hd d rt P. φ 53 O: ua rt

P φ d d P N P er P P X rt φ Φ 3 d Φ Φ 01 3 X N φ φ d rt φ φ

CD: tr d rt P φ φ Φ P cn - NP 3 13 P- P- 13 es <P Hl P- d • dd and others 3 among others • DJ Cfl hd P Φ o φ Ω d tu PJ o tr o O 01 Φ P. φ d Φ P d PJ P 53 <dd Φ including ESJ P "Φ tr Φ Φ P- 01 PP ¹ P

P- P CD: DJ Φ d and others P Φ 53 P-. α P φ d φ cn

01 d d α P- Ω P d rt φ d P 3 3 rv>

Ω and others P- φ tr d er and others Ω P X P Φ P Hi φ <! d Φ N CΛ P d P- Hi and others isi CΛ tr Φ cn φ Φ φ tr 01 O: N φ d = Ω Φ Φ α Cd rt <! d Ω PJ Φ PJ d d

P- d rv> er P d P- 53 rt Ω d P φ P- X "PP P- d ^' NO er φ tr d er cn 01 er cn

Ω DJ D: Φ d P- rt DJ tr d φ P- Ω H "er Φ rt d P tn P- d rt and others Φ D: 01 co cn d P- P and others φ P-" 53 P ¹ Φ P and others tr rt ι_ι. d hd 01 Hi d P rt ddd 01 d Cd rt rt rt co EP P Ω d rt N Φ Φ d rt er Φ d P o ua P- P φ p. d Hl P. p- NP

Φ DJ 53 Φ Φ tr P φ P P- ESJ P ⁾ 53 53 P pj: P- P Ω DJ and others Φ d P "PJ cn d (D: P d er P EP d P φ φ Φ and others 01 3 tr rt 3 Cd • CD: the P- rt J tr Φ Φ Φ cn φ> »cn 3 P P- d Φ rt d Φ rt P- d Ω Ω Hi

X ¹ d P hd P- P> P- d O £ rt P- P- PP ¹ 53 d P d cn rt rt 23 tr CΛ DJ tr O d

O: Pi Φ hd P d 1 - • P- Hl PJ rt 01 Φ 01 P- J Φ ua d DH) φ Φ Ω 01 Φ dd 1 d P PJ: Φ er φ d rt d 01 M P- 01 CΛ ua ö o P- tr φ P- P d DJ-- including NXPP • - * P rt N d tr d including PP rt cn P- d Φ

Φ ua Φ Q 53 P- P- Φ DJ • Φ P- er -J φ d 1 Φ P »Ω cn d φ 1 φ • Φ φ 1 01 P ¹ 1 o 1 Ω P PJ tr cn cπ

1 1 1 1 ¹ 1 1 U3

co co EV) rv> P ¹

Cπ o Cπ o Cπ o Cπ g

P ⁾ cn

X ¹ φ

co co tV ⁾ IV) P ¹ P ¹

Cπ o cπ o Cπ O Cπ cn

P>

-

P

P- φ

X

P- φ

P- d

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Φ X d Φ 53 3 0 er P- rt P φ P P Ω 53

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P d P tr DJ Ω Φ Ω P- P o Φ 53 Ω WD P- φ P and others P tr tr - tr P. Ej o P φ tr Ω er C:

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P O Φ P Ω N P Ω P- P φ d d P- Φ φ p.

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P ia d d PJ et o φ 13 P Φ P- P "Φ

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P • 53 01 o Φ Φ P- PJ d P. X φ oi • d d rt

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P P- φ Φ et 53 ¹ P "d 00 d ^ φ N

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01 h P DJ Φ ia P er P- rt d φ er P- P DJ Φ P

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DJ P "d EP P- Φ • O PJ PJ DJ P- g tr

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Φ P- P- d P- 01 <P- P PJ • P- φ 01 Φ d et P d and others d Φ d and others P- EP P d d P Φ

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P Φ Φ φ Φ d d o and others Φ tr 23 o S! ω Φ P-

DJ = P P 01 P- Φ α P "Φ and others DJ d CD: Ω P. P- rt and others Pi φ d d d Ω d Φ PJ p- P tr Φ

Φ CΛ 0 d N d tr PP φ including N DJ 3 § PP ¹ φ

X d - ~ P- hd and others Φ P- X ¹ Φ d Φ Φ Φ p- J er 1 and others P Ω P p- EP 1 (- ^■ 1 d

1 Φ P>: tr P- 01 Φ 1 Φ

1 d 1 1 1 et d P

Claims

claims

1. Process for the production of connection substrates for at least one electronic component each with a substrate body (2; 10; 12; 22; 69) made of high-temperature resistant

Thermoplastic material, the melting point of which is above the soldering temperature used for the connection, wherein at least on one surface of the substrate body (2, 10, 12; 22; 69) bumps (3; 69a) and / or depressions are integrally formed, characterized in that that the substrate body (2, 10, 12; 22; 69) is obtained by rolling the thermoplastic material, the bumps (3; 69a) and / or depressions being produced by means of at least one profiled embossing roller (41; 51; 61).

2. The method according to claim 1, that the thermoplastic material is supplied as an amorphous mass (20) to a rolling device (23, 25; 61, 68; 61, 78) containing the embossing roller (23; 41; 51; 61).

3. The method according to claim 1, characterized in that the thermoplastic material in the form of an extruded profile (21; 69) of the embossing roller (23; 41; 51; 61) containing rolling device (23, 25; 61, 68.77) is supplied ,

4. The method of claim 3, d a d u r c h g e k e n n z e i c h n e t that an LCP material (Liquid Cristal Polymers) is used to produce the substrate body.

5. The method according to claim 3, characterized in that a syntactic polystyrene (SPS) or a high-temperature nylon (HTN) is used to produce the substrate body.

6. The method according to any one of claims 3 to 5, d a d u r c h g e k e n n z e i c h n e t that a film (21; 32; 69) is used as the shaped body.

7. The method according to any one of claims 3 to 6, characterized in that the surface of the shaped body (1) to be embossed is first provided with a metallic layer (6) which in each case has recesses at the locations of the bumps (3) or depressions to be embossed. stanchions (8).

8. The method according to claim 7, so that the metallic layer (6) has a predetermined standard pattern of recesses (8) and that the embossing tool (9) produces bumps (3) or depressions only at desired locations.

9. The method according to claim 7, d a d u r c h g e k e n n z e i c h n e t that the metallic layer (6) has recesses (8) defined at the points where bumps are to be produced, and that the metallic layer (6) serves as a mask during hot stamping.

10. The method according to any one of claims 7 to 9, so that the metallic layer in the form of a film (94) is loosely placed on the surface of the shaped body (69) to be embossed and then removed again.

11. The method according to any one of claims 1 to 10, characterized in that the bumps (3) are designed as contact bumps and provided with a solderable contact coating (13) and are connected to connections of the semiconductor component via conductor tracks (14; 15; 17).

12. The method according to claims 7 and 11, characterized in that the metallic ^¬ layer (6) is structured in a further step to conductors (15) which are connected to the respective contact coating (13) of the bumps (3) ,

13. The method according to claims 7 and 11, so that the metallic layer (6) is covered with an insulating layer (16) on which a further layer (17) with structured conductor tracks is applied.

14. The method according to any one of claims 1 to 13, so that the thermoplastic material or the substrate body formed from it is tempered in sections during the passage through the rolling device by heating and / or cooling certain areas of the embossing roller.

15. The method according to claim 14, so that heating and / or cooling takes place by means of heating or cooling devices arranged outside the embossing tool.

16. The method according to claim 14, so that the stamping tool (51, 61, 81) is partially heated and / or cooled from the inside.

17. The method according to any one of claims 1 to 16, characterized in that the substrate body is successively fed two or more embossing rollers, on each of which parts of the bumps and / or depressions to be embossed are produced.

18. Device for producing connection substrates for at least one electronic component in each case by the method according to one of claims 1 to 17, which has at least one embossing tool with the following features: at least one embossing roll that can be rotated relative to an abutment (68; 77) and has a cylindrical roller - Base body (41; 51; 61) and at least one embossing layer (42; 52, 53; 62, 63, 64, 65) attached to the peripheral surface of the base body, which has a negative pattern of the embossing structure to be produced.

19. The device according to claim 18, so that the negative pattern in the respective embossing layer (42, 52, 53; 62, 63, 64, 65,) is designed in the form of openings (62a, 63a).

20. The apparatus of claim 18 or 19, so that two or more embossing layers (62, 63, 64, 65) are arranged one above the other for embossing stepped embossing structures, each having openings (62 a, 63 a) of different sizes aligned with one another.

21. Device according to one of claims 18 to 20, characterized in that the embossing layers (42; 52, 53; 62, 63, 64, 65) are each films which are stretched onto the peripheral surface (41a; 51a; 61a) of the roller ,

22. Device according to one of claims 18 to 21, characterized in that a ventilation zone is arranged between the innermost embossing layer (42; 52; 63, 65) and the peripheral surface (41a; 51a; 61a) of the roller.

23. Device according to one of claims 18 to 22, characterized in that the embossing roller ^¬ (51; 61) distributed over its circumference comprises at least two segments, on each of which a (52,53) or more (62, 63, 64, 65) Embossing stories are spanned.

24. Device according to one of claims 18 to 23, characterized in that inside and / or outside of the embossing roller (51,61) heating and / or cooling devices (55, 56; 66, 67; 75, 76; 77; 78, 79, 80), which are capable of generating different temperatures in different areas of the embossing layers, are arranged independently of the rotary movement of the embossing roller.

25. Device according to one of claims 18 to 22, that a spray device is provided at the entrance of the rolling device in order to wet the substrate body (69) with a mold release before the start of the rolling process.

26. Device according to one of claims 18 to 25, characterized in that a nozzle (70) is provided at the outlet of the rolling device to each of the embossed substrate body (69) with a pressurized gaseous or liquid medium from the embossing layer (62 , 64) to solve.

27. Device according to one of claims 18 to 26, d a d u r c h g e k e n n z e i c h n e t that the rolling device has two or more embossing rollers connected in series.