WO2002011254A3 - Widely tunable laser structure - Google Patents
Widely tunable laser structure Download PDFInfo
- Publication number
- WO2002011254A3 WO2002011254A3 PCT/US2001/023649 US0123649W WO0211254A3 WO 2002011254 A3 WO2002011254 A3 WO 2002011254A3 US 0123649 W US0123649 W US 0123649W WO 0211254 A3 WO0211254 A3 WO 0211254A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- lasers
- electro
- wave guide
- buffer layer
- accommodating buffer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0218—Substrates comprising semiconducting materials from different groups of the periodic system than the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001279044A AU2001279044A1 (en) | 2000-07-31 | 2001-07-27 | Widely tunable laser structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62928300A | 2000-07-31 | 2000-07-31 | |
US09/629,283 | 2000-07-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002011254A2 WO2002011254A2 (en) | 2002-02-07 |
WO2002011254A3 true WO2002011254A3 (en) | 2003-07-31 |
Family
ID=24522352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/023649 WO2002011254A2 (en) | 2000-07-31 | 2001-07-27 | Widely tunable laser structure |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2001279044A1 (en) |
TW (1) | TW508882B (en) |
WO (1) | WO2002011254A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020158265A1 (en) * | 2001-04-26 | 2002-10-31 | Motorola, Inc. | Structure and method for fabricating high contrast reflective mirrors |
CN111162454B (en) * | 2020-01-02 | 2021-03-12 | 中国科学院半导体研究所 | Broadband tuning system and tuning method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4866489A (en) * | 1986-07-22 | 1989-09-12 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
EP0602568A2 (en) * | 1992-12-17 | 1994-06-22 | Eastman Kodak Company | A multilayer structure having a (111)-oriented buffer layer |
US5673284A (en) * | 1994-05-25 | 1997-09-30 | Texas Instruments Incorporated | Integrated laser and coupled waveguide |
US5732102A (en) * | 1994-12-20 | 1998-03-24 | France Telecom | Laser component having a bragg reflector of organic material, and a method of making it |
-
2001
- 2001-07-27 AU AU2001279044A patent/AU2001279044A1/en not_active Abandoned
- 2001-07-27 WO PCT/US2001/023649 patent/WO2002011254A2/en active Application Filing
- 2001-07-31 TW TW90118642A patent/TW508882B/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4866489A (en) * | 1986-07-22 | 1989-09-12 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
EP0602568A2 (en) * | 1992-12-17 | 1994-06-22 | Eastman Kodak Company | A multilayer structure having a (111)-oriented buffer layer |
US5673284A (en) * | 1994-05-25 | 1997-09-30 | Texas Instruments Incorporated | Integrated laser and coupled waveguide |
US5732102A (en) * | 1994-12-20 | 1998-03-24 | France Telecom | Laser component having a bragg reflector of organic material, and a method of making it |
Non-Patent Citations (3)
Title |
---|
KATOH Y ET AL: "FOUR-WAVELENGTH DBR LASER ARRAY WITH WAVEGUIDE-COUPLERS FABRICATED USING SELECTIVE MOVPE GROWTH", PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS. HOKKAIDO, MAY 9 - 13, 1995, NEW YORK, IEEE, US, vol. CONF. 7, 9 May 1995 (1995-05-09), pages 26 - 28, XP000630613, ISBN: 0-7803-2148-0 * |
OBERG M ET AL: "A THREE-ELECTRODE DISTRIBUTED BRAGG REFLECTOR LASER WITH 22 NM WAVELENGTH TUNING RANGE", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 3, no. 4, 1 April 1991 (1991-04-01), pages 299 - 301, XP000227561, ISSN: 1041-1135 * |
YU Z ET AL: "Epitaxial oxide thin films on Si(001)", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 18, no. 4, July 2000 (2000-07-01), pages 2139 - 2145, XP002172595, ISSN: 0734-211X * |
Also Published As
Publication number | Publication date |
---|---|
AU2001279044A1 (en) | 2002-02-13 |
WO2002011254A2 (en) | 2002-02-07 |
TW508882B (en) | 2002-11-01 |
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