WO2002012116A3 - Bonded wafer optical mems process - Google Patents
Bonded wafer optical mems process Download PDFInfo
- Publication number
- WO2002012116A3 WO2002012116A3 PCT/US2001/041523 US0141523W WO0212116A3 WO 2002012116 A3 WO2002012116 A3 WO 2002012116A3 US 0141523 W US0141523 W US 0141523W WO 0212116 A3 WO0212116 A3 WO 0212116A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- bonded wafer
- mems process
- optical mems
- wafer optical
- layer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/042—Micromirrors, not used as optical switches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0323—Grooves
- B81B2203/033—Trenches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0135—Controlling etch progression
- B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001281381A AU2001281381A1 (en) | 2000-08-03 | 2001-08-03 | Bonded wafer optical mems process |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22275100P | 2000-08-03 | 2000-08-03 | |
US60/222,751 | 2000-08-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002012116A2 WO2002012116A2 (en) | 2002-02-14 |
WO2002012116A3 true WO2002012116A3 (en) | 2002-04-04 |
Family
ID=22833522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/041523 WO2002012116A2 (en) | 2000-08-03 | 2001-08-03 | Bonded wafer optical mems process |
Country Status (3)
Country | Link |
---|---|
US (1) | US7083997B2 (en) |
AU (1) | AU2001281381A1 (en) |
WO (1) | WO2002012116A2 (en) |
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WO2014059080A1 (en) * | 2012-10-12 | 2014-04-17 | Texas State University-San Marcos | A vertically movable gate field effect transistor (vmgfet) on a silicon-on-insulator (soi) wafer and method of forming a vmgfet |
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US9656859B2 (en) * | 2015-04-16 | 2017-05-23 | The United States Of America, As Represented By The Secretary Of The Navy | Method for fabricating suspended MEMS structures |
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Citations (5)
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US5216490A (en) * | 1988-01-13 | 1993-06-01 | Charles Stark Draper Laboratory, Inc. | Bridge electrodes for microelectromechanical devices |
US5343064A (en) * | 1988-03-18 | 1994-08-30 | Spangler Leland J | Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
EP0834759A2 (en) * | 1996-09-27 | 1998-04-08 | Mcnc | Microelectromechanical devices including rotating plates and related methods |
US6021675A (en) * | 1995-06-07 | 2000-02-08 | Ssi Technologies, Inc. | Resonating structure and method for forming the resonating structure |
DE19847455A1 (en) * | 1998-10-15 | 2000-04-27 | Bosch Gmbh Robert | Silicon multi-layer etching, especially for micromechanical sensor production, comprises etching trenches down to buried separation layer, etching exposed separation layer and etching underlying silicon layer |
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US5479042A (en) * | 1993-02-01 | 1995-12-26 | Brooktree Corporation | Micromachined relay and method of forming the relay |
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-
2001
- 2001-08-03 AU AU2001281381A patent/AU2001281381A1/en not_active Abandoned
- 2001-08-03 WO PCT/US2001/041523 patent/WO2002012116A2/en active Application Filing
- 2001-08-03 US US09/921,456 patent/US7083997B2/en not_active Expired - Lifetime
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US5216490A (en) * | 1988-01-13 | 1993-06-01 | Charles Stark Draper Laboratory, Inc. | Bridge electrodes for microelectromechanical devices |
US5343064A (en) * | 1988-03-18 | 1994-08-30 | Spangler Leland J | Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
US6021675A (en) * | 1995-06-07 | 2000-02-08 | Ssi Technologies, Inc. | Resonating structure and method for forming the resonating structure |
EP0834759A2 (en) * | 1996-09-27 | 1998-04-08 | Mcnc | Microelectromechanical devices including rotating plates and related methods |
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Title |
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BROSNIHAN T J ET AL: "Embedded interconnect and electrical isolation for high-aspect-ratio, SOI inertial instruments", 1997 INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS AND ACTUATORS. DIGEST OF TECHNICAL PAPERS. TRANSDUCERS 97. CHICAGO, IL, JUNE 16 - 19, 1997. SESSIONS 3A1 - 4D3. PAPERS NO. 3A1.01 - 4D3.14P, INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS AND ACTU, vol. 2, 16 June 1997 (1997-06-16), pages 637 - 640, XP010240558, ISBN: 0-7803-3829-4 * |
Also Published As
Publication number | Publication date |
---|---|
US20020117728A1 (en) | 2002-08-29 |
WO2002012116A2 (en) | 2002-02-14 |
AU2001281381A1 (en) | 2002-02-18 |
US7083997B2 (en) | 2006-08-01 |
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