WO2002015392A2 - Schaltungsanordnung zur erkennung eines fehlerzustands - Google Patents
Schaltungsanordnung zur erkennung eines fehlerzustands Download PDFInfo
- Publication number
- WO2002015392A2 WO2002015392A2 PCT/DE2001/003118 DE0103118W WO0215392A2 WO 2002015392 A2 WO2002015392 A2 WO 2002015392A2 DE 0103118 W DE0103118 W DE 0103118W WO 0215392 A2 WO0215392 A2 WO 0215392A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- transistor
- connection
- hand
- load
- vdd
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
Definitions
- Circuit arrangement for detecting an error state
- the present invention relates to a viewing arrangement for recognizing an error state.
- Circuit measures no undesirable effects on the useful signals or the supply voltage occur.
- the object of the present invention is to provide a circuit arrangement for identifying an error state which has a low power loss, has a short response time and is suitable for large supply voltages.
- the object is achieved with a circuit arrangement for detecting an error state, with three connections, comprising a first circuit node to which an electrical load can be connected, a connection for a supply potential and a connection for a reference potential, which can be connected to a voltage source , a signal processing circuit whose output is connected to the first circuit node, - a first transistor, which is of a self-conducting type, which has a first load connection, which is connected to the first circuit node, which has a second load connection, which is connected to the on - Conclusion for supply potential or reference potential is connected, wherein in a normal operating state at the control input of the first transistor there is a voltage constricting its channel and in an error state the first and the second load connection of the transistor are connected in a low-resistance manner via its channel are.
- Self-conducting transistors are also known as depletion type transistors.
- a gate voltage of the first transistor can be pumped either via a positive supply potential or below a negative supply potential, thereby ensuring that the circuit nodes are decoupled.
- this connection becomes low-resistance, so that the transistor can be damaged due to its
- Wiring acts as a non-linear resistor.
- Charge pumps can be provided in the circuit arrangement to provide the voltages constricting the channel, which charge pumps provide a corresponding control voltage which lies outside the supply voltage of the circuit arrangement.
- the control voltage drops, as a result of which the channel is no longer cut off, the transistor becomes conductive and connects the first circuit node to the reference or supply potential connection with low impedance.
- the fault condition is present when a supply line connected to the circuit arrangement, which connects the voltage source to the supply or reference potential connection, is interrupted or has a voltage below a minimum voltage limit.
- the supply line connected to the circuit arrangement can be long and can be arranged between the circuit arrangement and an electrical load directly connected to the voltage source.
- the signal processing circuit is a linear output stage.
- linear output stages it may be advantageous, for operational safety reasons, to connect the output pin of the output stage to the remaining, intact supply line in a low-resistance manner if a supply line breaks.
- an error state can be easily detected, for example, by the fact that a linear output stage has a modulation range which lies in a voltage interval which is smaller than the supply voltage, so that by setting the output potential to a supply potential which is not covered by the modulation range, Fault status detection is possible in a simple manner.
- the linear output stage can have a modulation range that ranges from 1 volt to 4 volts. If, for example, the output potential is less than 0.5 volts or greater than 4.5 volts and therefore close to the reference Potential or close to the supply potential, a fault condition can thus be detected in a simple manner.
- the second load terminal of the first transistor is connected to a supply potential terminal and is connected an electrical load in one, first load case, on the one hand to the first circuit node and on the other hand to a reference potential.
- first load case on the one hand to the first circuit node and on the other hand to a reference potential.
- a voltage source can be provided between supply and reference potential, which can be connected to the electrical load on the load side.
- the electrical load can be arranged between the first circuit node and the supply potential, so that when the supply line carrying the supply potential is interrupted, a low-resistance connection between the first circuit node and the reference potential is to be established.
- the electrical load can be a purely ohmic load.
- a second transistor which has a first load connection, which is connected to the reference potential, and which has a second load connection, which is connected to the first circuit node, wherein, in a normal operation at the control input of the second transistor has a voltage constricting its channel.
- the provision of a second transistor in the circuit arrangement has the advantage that one transistor is provided between the first circuit node and one reference or supply potential, so that a fault condition can be recognized regardless of whether the electrical load between the first Circuit node and supply potential or between the first circuit node and reference potential is arranged.
- the first and the second transistor are P-channel JFETs.
- P-channel junction field-effect transistors have the advantage that they are protected against polarity reversal, which means that the supply potential can become negative compared to the reference potential without an impermissibly large current flowing.
- the first and the second transistor are N-channel JFETs.
- a third transistor is provided, which is connected on the load side on the one hand to the supply potential and on the other hand to the first transistor, and a fourth transistor is provided which is connected on the load side on the one hand to the second transistor and on the other hand to the reference potential ,
- the provision of a plurality of transistors connected in series between a respective first and a second circuit node has the advantage that the circuit arrangement is suitable even for high applied voltages. It is sufficient if at least one of a plurality of transistors connected to one another on the load side in series between the first and second circuit nodes is operated with a gate voltage which is outside the supply voltage, that is to say is greater in amount.
- a subcircuit for limiting the power loss is provided, which is connected to the control inputs of the first, second, third and fourth transistor.
- the subcircuit for limiting the power loss enables the transistors to operate as non-linear ones
- gate discharge resistors are provided, of which a first is connected on the one hand to the control connection of the first and on the other hand to the control connection of the second transistor and a second gate discharge resistor on the one hand to the control input of the first transistor and on the other hand is connected to the supply potential.
- this results in a low load on a charge pump which provides the potential for the control inputs of the first and second transistor in normal operation, and on the other hand through the decoupling of the first and second
- smoothing capacitors are provided, of which a first is connected between the second load connection of the first transistor and the control input of the first transistor and a second between the control input of the second transistor and the second load connection of the first transistor.
- This arrangement of the smoothing capacitors avoids high stress on the smoothing capacitors due to high voltages present at the control inputs, as well as protection against electromagnetically or electrostatically coupled pulses, and prevents the capacitor discharge currents from spreading over the first circuit nodes.
- a second transistor is connected on the load side between the supply and reference potential.
- FIG. 1 shows an exemplary embodiment of the present invention on the basis of a block diagram
- FIG. 2 shows the circuit from FIG. 1, applied to a second load case
- FIG. 3 shows a circuit arrangement implemented independently of the load case according to FIGS. 1 and 2,
- FIG. 4 is a further development of the viewing arrangement IC3
- FIG. 5 shows another embodiment of the present
- FIG. 6 shows the circuit according to FIG. 5, applied to the second load case.
- FIG. 1 shows a first embodiment of the circuit arrangement IC1 with a linear output stage PA, which has an output OUT, to which a first transistor S1, shown for simplicity as a switch, is connected on the load side.
- the first transistor S1 has a control input El and, on the other hand, is connected on the load side to a supply potential VDD.
- the circuit arrangement IC1 is also connected to a reference potential GND.
- an electrical load RL is provided, which is connected in a first load case LF1 as a so-called pull-down load resistor to the output OUT and to the reference potential GND via lines, which can be long.
- a voltage source Q is connected to the electrical load RL on the reference potential side, and its positive pole is connected to the supply potential VDD.
- Supply lines VL1, VL2 are provided for carrying the supply and reference potential VDD, GND. If, in the event of a fault, the supply line VL2 has a break point BS, that is to say a ground break, the first transistor S1 switches the output OUT of the output stage PA to the supply potential VDD. On the one hand, this protects the circuit and, on the other hand, the fault situation caused by breakage BS of the ground line VL2 can be recognized.
- FIG. 2 shows a second load case LF2, in which the load resistor RL is implemented as a so-called pull-up load, which is connected on the one hand to the output OUT of the linear amplifier stage PA and on the other hand to a supply potential VDD by means of a supply line VL1.
- a voltage source Q which is connected to the electrical load RL, is provided between the supply and reference potential VDD, GND, as in FIG. 1.
- the occurrence of a break BS in the supply line VL1 carrying the supply potential VDD could pose a risk to operational reliability, so that in this case a second transistor S2 is provided, which on the load side has the output OUT and the reference potential GND shift is bound and has a second control input E2. If an error occurs, for example due to the occurrence of a break point BS, the second transistor S2 establishes a low-resistance connection between the output of the amplifier PA and the reference potential GND.
- FIG. 3 shows a circuit arrangement IC3, which represents a combination of the circuit arrangements IC1, IC2 of FIGS. 1 and 2.
- a first transistor S1 is connected to the output of the linear output stage PA, which is connected to a supply potential VDD, and a second transistor S2 is connected to a reference potential GND.
- the first and second transistors S1, S2 each have a control input El, E2. Regardless of whether an electrical load RL according to a first load case LF1 shown in FIG. 1 or according to a second load case LF2 shown in FIG. 2 is connected to the circuit arrangement IC3, the circuit arrangement IC3 according to FIG. 3 enables a break point in the first
- Supply line VL1 or the second supply line VL2 to connect the output OUT of the linear amplifier stage PA to the reference potential GND and / or to the supply potential VDD in a low-resistance manner, and on the one hand to enable easy detection of an error state and on the other hand to consequential damage due to the breakage of the supply lines Avoid VL1, VL2.
- FIG. 4 shows a further development of the circuit arrangement IC3 from FIG. 3.
- the circuit according to FIG. 4 has two control inputs E1, E2 for controlling the first transistor JF2 and the second transistor JF3.
- an output OUT is provided, to which, for example, the output of a linear output stage can be connected, as well as connections for supply and reference potential VDD, GND. ⁇ > to to ⁇ - ⁇ - o in o i ⁇ 0
- H PJ ⁇ ⁇ ⁇ Di O ⁇ - ü 03 ⁇ Q ⁇ ⁇ 0 rt tr 03 ⁇ ⁇ ⁇ - ⁇ ⁇ a D. CD ⁇ J ü CD
- 03 PJ rt ⁇ a ⁇ - 03 rt tr 0 ⁇ ! PJ PJ Di a CQ Di CD • s Hi ⁇ ⁇ ⁇ 0 ⁇ CQ ii ⁇ ff rt PJ Hi J ⁇ ⁇ 0 ⁇ - 03 ⁇ - H H a ⁇ - ⁇ 03 Hj 0 ⁇ 3 a a Hj ⁇ a 0 03 PJ.
- a fifth diode D5 which is connected on the one hand to the supply potential VDD and on the other hand to a seventh resistor R7, which is connected to the gate of the first transistor JF2, together with this causes that if the supply potential VDD is large compared to the potential at the output OUT is that the gate of the first transistor JF2 is kept at supply potential VDD, while the current flowing through R1 and the channel of the first transistor JF2 causes the source terminal of the first transistor JF2 to be pressed below the potential of the gate terminal thereof, so that the channel of the first transistor JF2, just like that of the third transistor JF1, becomes more resistive with increasing drain current.
- the seventh resistor R7 limits the current to sufficiently small values if the gate of the first transistor JF2 breaks through if the supply potentials VDD are too high, so that excessive degradation of the gate of the first transistor JF2 can be avoided.
- a third diode D3 is connected on the one hand to the output OUT and on the other hand to the gate of the second transistor JF3. This causes the gate connection of the second transistor JF3 to be kept at the potential at the output OUT when there is a large voltage difference between the output OUT and the reference potential GND, while a current flow results via the third resistor R3, which causes the source connection to have a potential below the gate potential of the second
- Transistor JF3 is pressed, so that in turn the channel of the second transistor JF3 becomes more resistive with increasing drain current.
- a sixth resistor R6 which is connected on the one hand to the output OUT and on the other hand to the gate of the fourth transistor JF4, Increase at the output OUT compared to the reference potential GND, the gate of the fourth transistor JF4 held at the potential present at the output OUT, while the current flow through the third resistor R3 and the second transistor JF3 causes the source connection of the fourth transistor JF4 to be potentially below that at the gate thereof applied voltage is pressed, so that the channel of the fourth transistor JF4 becomes higher resistance with increasing drain current.
- the advantage of using a sixth resistor R6 instead of a diode has the advantage that the resistor R6 limits the gate current of the fourth transistor JF4 when the gate-drain path of the fourth transistor JF4 breaks down, in order to avoid degeneration or degradation at the fourth transistor JF4 ,
- a fourth diode D4 which is connected on the one hand to the output OUT and on the other hand to the gate connection of the first transistor JF2, causes the gate of the first transistor JF2 to have output potential at the output when there is a voltage surge at the output OUT compared to supply potential VDD OUT is held, while a current flows through the second resistor R2, which presses the drain potential under the gate of the first transistor JF2, so that its channel becomes more resistive with increasing drain current. From an electrical point of view, the functions of drain and source of the first transistor JF2 are interchanged.
- a fifth resistor R5 is connected to the output OUT, to which a second diode D2 is connected in series, which is connected to the gate connection of the third transistor JF1.
- This wiring of the second diode D2 with the fifth resistor R5 causes the gate potential to be kept at potential at the output OUT when there is a large potential difference between the output OUT and the supply potential VDD, while the second resistor R2 and channel of the first transistor JF2 a current flows which poten- tifies the drain of the third transistor JF1 rH 1 1 1 1 1 1 TJ 1 1 1 1 x
- Q ⁇ 54 a 54 J CQ rH ⁇ ⁇ G TJ.
- the exemplary embodiment according to FIG. 5 has an improved overvoltage behavior, since the connection for the supply potential VDD is decoupled from the output OUT. If high voltages occur at the output OUT, which are higher than the supply voltage, there is no considerable current flow from the output OUT to the connection for the supply potential VDD. If the transistor P1 breaks down, only a current flows from the output OUT to ground without stressing the voltage source Q. If, on the other hand, an overvoltage occurs at the supply potential connection VDD, the current flowing from the supply potential to the reference potential via transistor P2 advantageously does not influence the potential at the output OUT, so that the output stage PA can be designed with a low driver capability and nevertheless the potential at the output OUT can be kept at reference potential GND.
- FIG. 6 shows an application of the circuit arrangement from FIG. 5 to a second load case LF2, in which a load resistor RL connected as a pull-up load is connected via a long line LEI, LE2 to the supply potential connection VDD and output OUT of the circuit arrangement IC4.
- An external voltage source Q is connected via the long line LEI to the connection for the supply potential VDD and via a long line LE3 to the connection for the reference potential GND.
- the described configuration of the circuit arrangement reduces the interference voltage ripple occurring at the output OUT because of parasitic capacitances of the transistors P1, P2, since only one transistor P1, not two, directly on OUT output is connected.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE50111323T DE50111323D1 (de) | 2000-08-16 | 2001-08-16 | Schaltungsanordnung zur erkennung eines fehlerzustands |
EP01969241A EP1310040B1 (de) | 2000-08-16 | 2001-08-16 | Schaltungsanordnung zur erkennung eines fehlerzustands |
KR10-2003-7002251A KR100478795B1 (ko) | 2000-08-16 | 2001-08-16 | 결함 상태를 식별하는 회로 장치 |
US10/368,074 US7054123B2 (en) | 2000-08-16 | 2003-02-18 | Circuit configuration for identifying a fault state |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10040092.2 | 2000-08-16 | ||
DE10040092A DE10040092A1 (de) | 2000-08-16 | 2000-08-16 | Schaltungsanordnung zur Erkennung eines Fehlerzustands |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/368,074 Continuation US7054123B2 (en) | 2000-08-16 | 2003-02-18 | Circuit configuration for identifying a fault state |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002015392A2 true WO2002015392A2 (de) | 2002-02-21 |
WO2002015392A3 WO2002015392A3 (de) | 2002-06-27 |
Family
ID=7652664
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2001/003118 WO2002015392A2 (de) | 2000-08-16 | 2001-08-16 | Schaltungsanordnung zur erkennung eines fehlerzustands |
Country Status (5)
Country | Link |
---|---|
US (1) | US7054123B2 (de) |
EP (1) | EP1310040B1 (de) |
KR (1) | KR100478795B1 (de) |
DE (2) | DE10040092A1 (de) |
WO (1) | WO2002015392A2 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006008284B3 (de) * | 2006-02-22 | 2007-10-25 | Infineon Technologies Ag | Schaltung mit einer Anordnung zur Detektion einer unterbrochenen Anschlussleitung |
US7471494B2 (en) | 2004-11-15 | 2008-12-30 | Infineon Technologies Ag | Output circuit |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10351873B4 (de) * | 2003-11-06 | 2012-07-26 | Pilz Gmbh & Co. Kg | Vorrichtung und Verfahren zum fehlersicheren Abschalten eines induktiven Verbrauchers |
US7256605B2 (en) * | 2005-11-14 | 2007-08-14 | Semiconductor Components Industries, L.L.C. | Diagnostic circuit and method therefor |
US9501714B2 (en) | 2010-10-29 | 2016-11-22 | Qualcomm Incorporated | Systems and methods to improve feature generation in object recognition |
US8576523B2 (en) * | 2011-03-14 | 2013-11-05 | Qualcomm Incorporated | Charge pump electrostatic discharge protection |
US8937797B2 (en) * | 2012-03-19 | 2015-01-20 | Allegro Microsystems, Llc | Method and apparatus to detect a broken wire condition in an integrated circuit |
CN105378587B (zh) * | 2013-06-04 | 2019-12-17 | Trw汽车美国有限责任公司 | 优化的电源架构 |
US9641070B2 (en) | 2014-06-11 | 2017-05-02 | Allegro Microsystems, Llc | Circuits and techniques for detecting an open pin condition of an integrated circuit |
US10001519B2 (en) | 2015-06-12 | 2018-06-19 | Allegro Microsystems, Llc | Ground reference fault detection in circuits with multiple ground references |
JP7203091B2 (ja) * | 2018-03-30 | 2023-01-12 | 三洋電機株式会社 | 電池パック及びその充電制御方法 |
US11121547B2 (en) * | 2019-04-02 | 2021-09-14 | Analog Devices International Unlimited Company | Device and method for overvoltage protection |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3988695A (en) * | 1974-03-30 | 1976-10-26 | Licentia Patent-Verwaltungs-G.M.B.H. | Protection circuit for output stage of low frequency amplifiers |
DE2833501A1 (de) * | 1978-07-31 | 1980-02-21 | Bosch Gmbh Robert | Schutzschaltung fuer einen verbraucher |
US4678950A (en) * | 1983-05-13 | 1987-07-07 | Nec Corporation | Output circuit having an improved protecting circuit |
US4691129A (en) * | 1986-03-19 | 1987-09-01 | Siemens Aktiengesellschaft | Drive circuit for a power MOSFET with source-side load |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53128251A (en) * | 1977-04-15 | 1978-11-09 | Hitachi Ltd | Source follwoer circuit |
NL8800234A (nl) * | 1988-02-01 | 1989-09-01 | Philips Nv | Geintegreerde schakeling met logische circuits en ten minste een push-pull-trap. |
US6081132A (en) * | 1998-03-09 | 2000-06-27 | Intel Corporation | High voltage drive output buffer for low Voltage integrated circuits |
US6614288B1 (en) * | 1998-05-20 | 2003-09-02 | Astec International Limited | Adaptive drive circuit for zero-voltage and low-voltage switches |
DE10008180C2 (de) * | 1999-07-15 | 2002-11-14 | Micronas Gmbh | Elektronische Gebereinrichtung |
US6400546B1 (en) * | 1999-09-02 | 2002-06-04 | Ati International Srl | I/O pad voltage protection circuit and method |
US6842320B1 (en) * | 2002-09-26 | 2005-01-11 | Cypress Semiconductor Corporation | Hot-pluggable over-voltage tolerant input/output circuit |
-
2000
- 2000-08-16 DE DE10040092A patent/DE10040092A1/de not_active Ceased
-
2001
- 2001-08-16 KR KR10-2003-7002251A patent/KR100478795B1/ko not_active IP Right Cessation
- 2001-08-16 EP EP01969241A patent/EP1310040B1/de not_active Expired - Lifetime
- 2001-08-16 DE DE50111323T patent/DE50111323D1/de not_active Expired - Lifetime
- 2001-08-16 WO PCT/DE2001/003118 patent/WO2002015392A2/de active IP Right Grant
-
2003
- 2003-02-18 US US10/368,074 patent/US7054123B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3988695A (en) * | 1974-03-30 | 1976-10-26 | Licentia Patent-Verwaltungs-G.M.B.H. | Protection circuit for output stage of low frequency amplifiers |
DE2833501A1 (de) * | 1978-07-31 | 1980-02-21 | Bosch Gmbh Robert | Schutzschaltung fuer einen verbraucher |
US4678950A (en) * | 1983-05-13 | 1987-07-07 | Nec Corporation | Output circuit having an improved protecting circuit |
US4691129A (en) * | 1986-03-19 | 1987-09-01 | Siemens Aktiengesellschaft | Drive circuit for a power MOSFET with source-side load |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7471494B2 (en) | 2004-11-15 | 2008-12-30 | Infineon Technologies Ag | Output circuit |
DE102006008284B3 (de) * | 2006-02-22 | 2007-10-25 | Infineon Technologies Ag | Schaltung mit einer Anordnung zur Detektion einer unterbrochenen Anschlussleitung |
US7683626B2 (en) | 2006-02-22 | 2010-03-23 | Infineon Technologies Ag | Circuit with an arrangement for the detection of an interrupted connecting line |
Also Published As
Publication number | Publication date |
---|---|
EP1310040B1 (de) | 2006-10-25 |
KR100478795B1 (ko) | 2005-03-24 |
EP1310040A2 (de) | 2003-05-14 |
KR20030031157A (ko) | 2003-04-18 |
US20030223162A1 (en) | 2003-12-04 |
DE10040092A1 (de) | 2002-03-07 |
US7054123B2 (en) | 2006-05-30 |
DE50111323D1 (de) | 2006-12-07 |
WO2002015392A3 (de) | 2002-06-27 |
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