WO2002016897A3 - High temperature circuit structures - Google Patents

High temperature circuit structures Download PDF

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Publication number
WO2002016897A3
WO2002016897A3 PCT/US2001/023008 US0123008W WO0216897A3 WO 2002016897 A3 WO2002016897 A3 WO 2002016897A3 US 0123008 W US0123008 W US 0123008W WO 0216897 A3 WO0216897 A3 WO 0216897A3
Authority
WO
WIPO (PCT)
Prior art keywords
temperature
high temperature
adhesive layer
die
expansion
Prior art date
Application number
PCT/US2001/023008
Other languages
French (fr)
Other versions
WO2002016897A2 (en
Inventor
James D Parsons
Original Assignee
Hetron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24588800&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2002016897(A3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hetron filed Critical Hetron
Priority to JP2002521945A priority Critical patent/JP3796218B2/en
Priority to DE60139130T priority patent/DE60139130D1/en
Priority to EP01959086A priority patent/EP1311815B1/en
Priority to AU2001280676A priority patent/AU2001280676A1/en
Publication of WO2002016897A2 publication Critical patent/WO2002016897A2/en
Publication of WO2002016897A3 publication Critical patent/WO2002016897A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A high temperature hybrid-circuit structure includes a temperature sensitive device (2) which comprises SiC, AlN and/or AlxGa1-xN (x > 0.69) connected by electrodes (4a, 4b) to an electrically conductive mounting layer (8) that is physically bonded to an AlN die (6). The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer (12) with an overlay metallization (14) having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture (18), with or without an upper die (22) which helps to hold on lead wires (16) and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.
PCT/US2001/023008 2000-08-24 2001-07-20 High temperature circuit structures WO2002016897A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002521945A JP3796218B2 (en) 2000-08-24 2001-07-20 High temperature circuit configuration
DE60139130T DE60139130D1 (en) 2000-08-24 2001-07-20 CIRCUIT STRUCTURES FOR HIGH TEMPERATURES
EP01959086A EP1311815B1 (en) 2000-08-24 2001-07-20 High temperature circuit structures
AU2001280676A AU2001280676A1 (en) 2000-08-24 2001-07-20 High temperature circuit structures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/645,383 2000-08-24
US09/645,383 US6576972B1 (en) 2000-08-24 2000-08-24 High temperature circuit structures with expansion matched SiC, AlN and/or AlxGa1-xN(x>0.69) circuit device

Publications (2)

Publication Number Publication Date
WO2002016897A2 WO2002016897A2 (en) 2002-02-28
WO2002016897A3 true WO2002016897A3 (en) 2002-05-02

Family

ID=24588800

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/023008 WO2002016897A2 (en) 2000-08-24 2001-07-20 High temperature circuit structures

Country Status (8)

Country Link
US (3) US6576972B1 (en)
EP (1) EP1311815B1 (en)
JP (1) JP3796218B2 (en)
CN (2) CN1773231A (en)
AU (1) AU2001280676A1 (en)
DE (1) DE60139130D1 (en)
RU (1) RU2248538C2 (en)
WO (1) WO2002016897A2 (en)

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US7063097B2 (en) * 2003-03-28 2006-06-20 Advanced Technology Materials, Inc. In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration
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AU2004291942C1 (en) * 2003-11-18 2010-04-08 Halliburton Energy Services, Inc. High temperature environment tool system and method
JP2005203734A (en) * 2003-12-15 2005-07-28 Toshiba Ceramics Co Ltd Ceramic article with embedded metal member and method of manufacturing the same
US7292132B1 (en) * 2003-12-17 2007-11-06 Adsem, Inc. NTC thermistor probe
US7812705B1 (en) 2003-12-17 2010-10-12 Adsem, Inc. High temperature thermistor probe
DE102004017799A1 (en) * 2004-04-05 2005-10-20 Ego Elektro Geraetebau Gmbh Temperature sensor and method for adjusting such
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DE202006017648U1 (en) * 2006-11-20 2007-02-15 Atlas Material Testing Technology Gmbh Device for deflecting liquid droplets from a temperature sensor comprises a receiving unit for the sensor and a strip arranged relative to an edge section of the sensor
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US8138027B2 (en) 2008-03-07 2012-03-20 Stats Chippac, Ltd. Optical semiconductor device having pre-molded leadframe with window and method therefor
US20090251960A1 (en) * 2008-04-07 2009-10-08 Halliburton Energy Services, Inc. High temperature memory device
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Also Published As

Publication number Publication date
EP1311815A2 (en) 2003-05-21
US20020179992A1 (en) 2002-12-05
US6649994B2 (en) 2003-11-18
US20030146502A1 (en) 2003-08-07
WO2002016897A2 (en) 2002-02-28
CN1256575C (en) 2006-05-17
JP2004507728A (en) 2004-03-11
EP1311815B1 (en) 2009-07-01
CN1773231A (en) 2006-05-17
JP3796218B2 (en) 2006-07-12
US6576972B1 (en) 2003-06-10
US6765278B2 (en) 2004-07-20
AU2001280676A1 (en) 2002-03-04
RU2248538C2 (en) 2005-03-20
CN1471632A (en) 2004-01-28
DE60139130D1 (en) 2009-08-13

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