WO2002027729A3 - Writable tracking cells - Google Patents

Writable tracking cells Download PDF

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Publication number
WO2002027729A3
WO2002027729A3 PCT/US2001/030123 US0130123W WO0227729A3 WO 2002027729 A3 WO2002027729 A3 WO 2002027729A3 US 0130123 W US0130123 W US 0130123W WO 0227729 A3 WO0227729 A3 WO 0227729A3
Authority
WO
WIPO (PCT)
Prior art keywords
cells
tracking
logic levels
user
read
Prior art date
Application number
PCT/US2001/030123
Other languages
French (fr)
Other versions
WO2002027729A2 (en
Inventor
Shahzad B Khalid
Daniel C Guterman
Geoffrey S Gongwer
Richard Simko
Kevin M Conley
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Priority to EP01975415A priority Critical patent/EP1332500B1/en
Priority to AU2001294743A priority patent/AU2001294743A1/en
Priority to KR1020037004422A priority patent/KR100760886B1/en
Priority to JP2002531423A priority patent/JP2004510286A/en
Priority to DE60130012T priority patent/DE60130012T2/en
Publication of WO2002027729A2 publication Critical patent/WO2002027729A2/en
Publication of WO2002027729A3 publication Critical patent/WO2002027729A3/en

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/26Sensing or reading circuits; Data output circuits
    • G11C16/28Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628Programming or writing circuits; Data input circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642Sensing or reading circuits; Data output circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/005Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2211/00Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562Multilevel memory programming aspects
    • G11C2211/5621Multilevel programming verification
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2211/00Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563Multilevel memory reading aspects
    • G11C2211/5634Reference cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Abstract

The present invention presents several techniques for using writable tracking cells. Multiple tracking cells are provided for each write block of the memory. These cells are re-programmed each time the user cells of the associated write block are written, preferably at the same time, using the same fixed, global reference levels to set the tracking and user cell programmed thresholds. The threshold voltages of the tracking cells are read every time the user cells are read, and these thresholds are used to determine the stored logic levels of the user cells. In one set of embodiments, populations of one or more tracking cells are associated with different logic levels of a multi-state memory. These tracking cell populations may be provided for only a subset of the logic levels. The read points for translating the threshold voltages are derived for all of the logic levels based upon this subset. In one embodiment, two populations each consisting of multiple tracking cells are associated with two logic levels of the multi-bit cell. In an analog implementation, the user cells are read directly using the analog threshold values of the tracking cell populations without their first being translated to digital values. A set of alternate embodiments provide for using different voltages and/or timing for the writing of tracking cells to provide less uncertainty in the tracking cells' final written thresholds.
PCT/US2001/030123 2000-09-27 2001-09-25 Writable tracking cells WO2002027729A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP01975415A EP1332500B1 (en) 2000-09-27 2001-09-25 Writable tracking cells
AU2001294743A AU2001294743A1 (en) 2000-09-27 2001-09-25 Writable tracking cells
KR1020037004422A KR100760886B1 (en) 2000-09-27 2001-09-25 Writable tracking cells
JP2002531423A JP2004510286A (en) 2000-09-27 2001-09-25 Writable tracking cell
DE60130012T DE60130012T2 (en) 2000-09-27 2001-09-25 DESCRIPTIVE TRACKING CELLS

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/671,793 US6538922B1 (en) 2000-09-27 2000-09-27 Writable tracking cells
US09/671,793 2000-09-27

Publications (2)

Publication Number Publication Date
WO2002027729A2 WO2002027729A2 (en) 2002-04-04
WO2002027729A3 true WO2002027729A3 (en) 2002-12-12

Family

ID=24695908

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/030123 WO2002027729A2 (en) 2000-09-27 2001-09-25 Writable tracking cells

Country Status (10)

Country Link
US (3) US6538922B1 (en)
EP (2) EP1624461B1 (en)
JP (1) JP2004510286A (en)
KR (1) KR100760886B1 (en)
CN (1) CN1273992C (en)
AT (1) ATE370498T1 (en)
AU (1) AU2001294743A1 (en)
DE (1) DE60130012T2 (en)
TW (1) TW561480B (en)
WO (1) WO2002027729A2 (en)

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