WO2002035586A3 - Monitoring substrate processing using reflected radiation - Google Patents
Monitoring substrate processing using reflected radiation Download PDFInfo
- Publication number
- WO2002035586A3 WO2002035586A3 PCT/US2001/049437 US0149437W WO0235586A3 WO 2002035586 A3 WO2002035586 A3 WO 2002035586A3 US 0149437 W US0149437 W US 0149437W WO 0235586 A3 WO0235586 A3 WO 0235586A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- radiation
- substrate processing
- substrate
- reflected radiation
- monitoring substrate
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01988945A EP1352415A2 (en) | 2000-10-23 | 2001-10-23 | Monitoring substrate processing using reflected radiation |
KR1020037005580A KR100927557B1 (en) | 2000-10-23 | 2001-10-23 | How to Monitor Substrate Processing Using Reflected Radiation |
JP2002538471A JP4098621B2 (en) | 2000-10-23 | 2001-10-23 | Apparatus and method for processing a substrate |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/695,577 | 2000-10-23 | ||
US09/695,577 US6831742B1 (en) | 2000-10-23 | 2000-10-23 | Monitoring substrate processing using reflected radiation |
US09/803,080 US6559942B2 (en) | 2000-10-23 | 2001-03-08 | Monitoring substrate processing with optical emission and polarized reflected radiation |
US09/803,080 | 2001-03-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002035586A2 WO2002035586A2 (en) | 2002-05-02 |
WO2002035586A3 true WO2002035586A3 (en) | 2003-08-07 |
Family
ID=27105602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/049437 WO2002035586A2 (en) | 2000-10-23 | 2001-10-23 | Monitoring substrate processing using reflected radiation |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1352415A2 (en) |
JP (3) | JP4098621B2 (en) |
CN (1) | CN100459027C (en) |
TW (1) | TW510008B (en) |
WO (1) | WO2002035586A2 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7306696B2 (en) * | 2002-11-01 | 2007-12-11 | Applied Materials, Inc. | Interferometric endpoint determination in a substrate etching process |
US6829056B1 (en) * | 2003-08-21 | 2004-12-07 | Michael Barnes | Monitoring dimensions of features at different locations in the processing of substrates |
JP4400406B2 (en) | 2004-10-08 | 2010-01-20 | エルピーダメモリ株式会社 | Manufacturing method of semiconductor device |
FR2887072A1 (en) * | 2005-06-08 | 2006-12-15 | Alcatel Sa | IMPROVED SPECTOGRAPHIC SYSTEM WITH PLASMA SOURCE |
JP5149610B2 (en) * | 2007-12-19 | 2013-02-20 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
US8135560B2 (en) | 2009-01-30 | 2012-03-13 | Applied Materials, Inc. | Sensor system for semiconductor manufacturing apparatus |
JP5559505B2 (en) * | 2009-09-30 | 2014-07-23 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP5385875B2 (en) * | 2010-08-26 | 2014-01-08 | 東京エレクトロン株式会社 | Plasma processing apparatus and optical monitor apparatus |
DE102014115708A1 (en) * | 2014-10-29 | 2016-05-04 | Aixtron Se | Method for separating a carbon structure from a seed structure |
JPWO2020157954A1 (en) | 2019-02-01 | 2021-02-18 | 株式会社日立ハイテク | Etching method and plasma processing equipment |
KR102521816B1 (en) * | 2019-12-20 | 2023-04-14 | 주식회사 히타치하이테크 | Plasma processing device and wafer processing method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5552016A (en) * | 1993-04-28 | 1996-09-03 | Applied Materials, Inc. | Method and apparatus for etchback endpoint detection |
EP0756318A1 (en) * | 1995-07-24 | 1997-01-29 | International Business Machines Corporation | Method for real-time in-situ monitoring of a trench formation process |
JPH10239028A (en) * | 1997-02-27 | 1998-09-11 | Toshiba Corp | Etching depth measuring method and its device |
US6081334A (en) * | 1998-04-17 | 2000-06-27 | Applied Materials, Inc | Endpoint detection for semiconductor processes |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4927485A (en) * | 1988-07-28 | 1990-05-22 | Applied Materials, Inc. | Laser interferometer system for monitoring and controlling IC processing |
JPH0997783A (en) * | 1995-09-28 | 1997-04-08 | Nec Corp | Plasma processing device |
JPH09126991A (en) * | 1995-10-27 | 1997-05-16 | Hitachi Ltd | Spectral detection method and its device and ultra-fine machining method and device used for it |
JPH10294305A (en) * | 1997-04-18 | 1998-11-04 | Hitachi Ltd | Production of semiconductor and semiconductor device |
JPH1167732A (en) * | 1997-08-22 | 1999-03-09 | Matsushita Electron Corp | Monitoring method of plasma process and monitoring apparatus |
US6060328A (en) * | 1997-09-05 | 2000-05-09 | Advanced Micro Devices, Inc. | Methods and arrangements for determining an endpoint for an in-situ local interconnect etching process |
US6483580B1 (en) * | 1998-03-06 | 2002-11-19 | Kla-Tencor Technologies Corporation | Spectroscopic scatterometer system |
US6390019B1 (en) * | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
JP2000012527A (en) * | 1998-06-25 | 2000-01-14 | Sumitomo Metal Ind Ltd | Method and apparatus for determining etching end point |
EP1095264A1 (en) * | 1998-07-11 | 2001-05-02 | Vorgem Limited | Improved process monitor |
KR100275671B1 (en) * | 1998-08-26 | 2001-02-01 | 윤종용 | Plasma etching equipment |
JP3383236B2 (en) * | 1998-12-01 | 2003-03-04 | 株式会社日立製作所 | Etching end point determining method and etching end point determining apparatus |
US6052176A (en) * | 1999-03-31 | 2000-04-18 | Lam Research Corporation | Processing chamber with optical window cleaned using process gas |
-
2001
- 2001-10-23 TW TW090126215A patent/TW510008B/en active
- 2001-10-23 CN CNB018163629A patent/CN100459027C/en not_active Expired - Fee Related
- 2001-10-23 JP JP2002538471A patent/JP4098621B2/en not_active Expired - Lifetime
- 2001-10-23 EP EP01988945A patent/EP1352415A2/en not_active Withdrawn
- 2001-10-23 WO PCT/US2001/049437 patent/WO2002035586A2/en active Search and Examination
-
2007
- 2007-06-18 JP JP2007159820A patent/JP4841507B2/en not_active Expired - Fee Related
- 2007-06-18 JP JP2007159821A patent/JP2007294987A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5552016A (en) * | 1993-04-28 | 1996-09-03 | Applied Materials, Inc. | Method and apparatus for etchback endpoint detection |
EP0756318A1 (en) * | 1995-07-24 | 1997-01-29 | International Business Machines Corporation | Method for real-time in-situ monitoring of a trench formation process |
JPH10239028A (en) * | 1997-02-27 | 1998-09-11 | Toshiba Corp | Etching depth measuring method and its device |
US6081334A (en) * | 1998-04-17 | 2000-06-27 | Applied Materials, Inc | Endpoint detection for semiconductor processes |
Non-Patent Citations (2)
Title |
---|
BIOLSI P ET AL: "AN ADVANCED ENDPOINT DETECTION SOLUTION FOR <1% OPEN AREAS", SOLID STATE TECHNOLOGY, COWAN PUBL.CORP. WASHINGTON, US, vol. 39, no. 12, 1 December 1996 (1996-12-01), pages 59,61 - 62,64,67, XP000632988, ISSN: 0038-111X * |
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 14 31 December 1998 (1998-12-31) * |
Also Published As
Publication number | Publication date |
---|---|
CN1636261A (en) | 2005-07-06 |
WO2002035586A2 (en) | 2002-05-02 |
CN100459027C (en) | 2009-02-04 |
TW510008B (en) | 2002-11-11 |
EP1352415A2 (en) | 2003-10-15 |
JP2004518272A (en) | 2004-06-17 |
JP4098621B2 (en) | 2008-06-11 |
JP4841507B2 (en) | 2011-12-21 |
JP2007294987A (en) | 2007-11-08 |
JP2007329485A (en) | 2007-12-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2002035586A3 (en) | Monitoring substrate processing using reflected radiation | |
DE60308691D1 (en) | METHOD AND DEVICE FOR CARRYING OUT A SIGNAL CORRELATION IN SEVERAL RESOLUTIONS FOR REDUCING MULTI-DISTANCE | |
WO2002029884A3 (en) | Detection of process endpoint through monitoring fluctuation of output data | |
WO2003040899A3 (en) | Techniques for performing logic operations using quantum states of single photons | |
CA2374153A1 (en) | Apparatus for detecting foreign matter in raw material and method of detecting the same | |
GB2330200A (en) | Methods and apparatus for the in-process detection of workpieces | |
WO2001042767A3 (en) | Detecting a process endpoint from a change in reflectivity | |
WO2007041280A3 (en) | Methods of and apparatuses for measuring electrical parameters of a plasma process | |
EP0332699A4 (en) | Method and apparatus for detecting the wavelength of a laser beam | |
MXPA02001697A (en) | Method and apparatus for locating the source of an unknown signal. | |
WO2008013944A3 (en) | Method and apparatus for calibrating a radiation therapy treatment system | |
TW200513349A (en) | Data processing for monitoring chemical mechanical polishing | |
CA2390287A1 (en) | Acoustic source range detection system | |
ATE230118T1 (en) | METHOD AND DEVICE FOR COUNTING OBJECTS | |
MY142610A (en) | Method and device for ultrasonic detection of surface defects such as cracks, fractures and the like on a rolling mill roller | |
ATE247854T1 (en) | METHOD AND DEVICE FOR MONITORING ARTICLES | |
DE59208363D1 (en) | DEVICE FOR PLASMA SUPPORTED SUBSTRATE PROCESSING | |
WO1998024291A3 (en) | Method and machine for placing components on a carrier and a calibration carrier detection device for use in the method and in the machine | |
AU2002366549A1 (en) | Planarity detection methods and apparatus for electrochemical mechanical processing systems | |
AU5746399A (en) | Device for determining a physical process variable of a medium | |
AU2001258922A1 (en) | Process for identifying objects using an optical spectrometer and a transport system | |
WO2004078021A3 (en) | A method for detecting and reducing energy leakage | |
WO2005028994A3 (en) | System and method for integrated multi-use optical alignment | |
WO2003095941A3 (en) | System and method for controlling tube thickness with ultrasound | |
MY117433A (en) | Method and apparatus for detecting contact lenses |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 018163629 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2002538471 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020037005580 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2001988945 Country of ref document: EP |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWP | Wipo information: published in national office |
Ref document number: 1020037005580 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2001988945 Country of ref document: EP |