WO2002037566A3 - Silicon controlled rectifier electrostatic discharge protection device with external on-chip triggering and compact internal dimensions for fast triggering - Google Patents

Silicon controlled rectifier electrostatic discharge protection device with external on-chip triggering and compact internal dimensions for fast triggering Download PDF

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Publication number
WO2002037566A3
WO2002037566A3 PCT/US2001/046039 US0146039W WO0237566A3 WO 2002037566 A3 WO2002037566 A3 WO 2002037566A3 US 0146039 W US0146039 W US 0146039W WO 0237566 A3 WO0237566 A3 WO 0237566A3
Authority
WO
WIPO (PCT)
Prior art keywords
triggering
external
controlled rectifier
silicon controlled
electrostatic discharge
Prior art date
Application number
PCT/US2001/046039
Other languages
French (fr)
Other versions
WO2002037566A2 (en
Inventor
Leslie R Avery
Christian C Russ
Koen G M Verhaege
John Armer
Markus P J Mergens
Original Assignee
Sarnoff Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sarnoff Corp filed Critical Sarnoff Corp
Priority to JP2002540215A priority Critical patent/JP2004531047A/en
Priority to DE60130028T priority patent/DE60130028T2/en
Priority to EP01993025A priority patent/EP1348236B1/en
Publication of WO2002037566A2 publication Critical patent/WO2002037566A2/en
Publication of WO2002037566A3 publication Critical patent/WO2002037566A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A silicon controlled rectifier electrostatic discharge protection circuit with external on-chip triggering and compact internal dimensions for fast triggering. The ESD protection circuit includes a silicon controlled rectifier (SCR) (202) having an anode (122) coupled to the protected circuitry and a cathode (124) coupled to ground, where the cathode has at least one high-doped region (312m). At least one trigger-tap (401) is disposed proximate to the at least one high-doped region and an external on-chip triggering device (205) is coupled to the trigger-tap and the protected circuitry.
PCT/US2001/046039 2000-11-06 2001-10-24 Silicon controlled rectifier electrostatic discharge protection device with external on-chip triggering and compact internal dimensions for fast triggering WO2002037566A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002540215A JP2004531047A (en) 2000-11-06 2001-10-24 Silicon controlled rectifier electrostatic discharge protection device with compact internal dimensions and external on-chip triggering for fast triggering
DE60130028T DE60130028T2 (en) 2000-11-06 2001-10-24 Electrostatic discharge protection device with silicon controlled rectifier with external on-chip triggering and compact internal dimensions for fast triggering
EP01993025A EP1348236B1 (en) 2000-11-06 2001-10-24 Silicon controlled rectifier electrostatic discharge protection device with external on-chip triggering and compact internal dimensions for fast triggering

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US24612300P 2000-11-06 2000-11-06
US60/246,123 2000-11-06
US26617101P 2001-02-02 2001-02-02
US60/266,171 2001-02-02
US28034501P 2001-03-30 2001-03-30
US60/280,345 2001-03-30

Publications (2)

Publication Number Publication Date
WO2002037566A2 WO2002037566A2 (en) 2002-05-10
WO2002037566A3 true WO2002037566A3 (en) 2003-07-24

Family

ID=27399903

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/046039 WO2002037566A2 (en) 2000-11-06 2001-10-24 Silicon controlled rectifier electrostatic discharge protection device with external on-chip triggering and compact internal dimensions for fast triggering

Country Status (6)

Country Link
US (1) US6791122B2 (en)
EP (1) EP1348236B1 (en)
JP (1) JP2004531047A (en)
DE (1) DE60130028T2 (en)
TW (1) TW538520B (en)
WO (1) WO2002037566A2 (en)

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JP2010067846A (en) * 2008-09-11 2010-03-25 Panasonic Corp Semiconductor device with electrostatic discharge protection circuit
US8455947B2 (en) * 2009-02-18 2013-06-04 Infineon Technologies Ag Device and method for coupling first and second device portions
JP5595751B2 (en) * 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 ESD protection element
US8283698B2 (en) * 2009-04-15 2012-10-09 Sofics Bvba Electrostatic discharge protection
CN101847633B (en) * 2010-05-05 2011-10-26 北京大学 Electrostatic protective device and preparation method thereof
CN102034857B (en) * 2010-10-28 2011-12-14 浙江大学 Bidirectional triode thyristor auxiliarily triggered by POMS field effect transistor
US20140167099A1 (en) 2011-03-10 2014-06-19 Qpx Gmbh Integrated circuit including silicon controlled rectifier
US8586423B2 (en) 2011-06-24 2013-11-19 International Business Machines Corporation Silicon controlled rectifier with stress-enhanced adjustable trigger voltage
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Also Published As

Publication number Publication date
US6791122B2 (en) 2004-09-14
EP1348236A2 (en) 2003-10-01
EP1348236B1 (en) 2007-08-15
DE60130028D1 (en) 2007-09-27
DE60130028T2 (en) 2008-06-26
US20020053704A1 (en) 2002-05-09
WO2002037566A2 (en) 2002-05-10
JP2004531047A (en) 2004-10-07
TW538520B (en) 2003-06-21

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