WO2002037577A2

WO2002037577A2 - Fiber, electronic circuit and textile product

Info

Publication number: WO2002037577A2
Application number: PCT/EP2001/012652
Authority: WO
Inventors: Martin Rojahn; Michail Rakhlin; Markus Schubert; Jürgen Werner; Heinrich Planck; Hansjürgen Horter
Original assignee: Universität Stuttgart; Deutsche Institute für Textil- und Faserforschung Stuttgart
Priority date: 2000-10-31
Filing date: 2001-10-31
Publication date: 2002-05-10
Also published as: AU2002221798A1; DE10054558A1; WO2002037577A8; WO2002037577A3

Abstract

The invention relates to a fiber, especially for a textile fabric, comprising a fiber core (12). According to the invention, at least one electronic component having one or more semiconductor layers (16, 18, 20) is provided on a fiber core (12).

Description

Fiber, electronic circuit and textile product

The invention relates to a fiber with a fiber core on which one, preferably at least two, semiconductor layers are accommodated, and to a textile product.

A fiber of the above type is known from US-A-5 838 868. In this case, at least one layer of a semiconductor material with a is on a cylindrical glass fiber core direct band gap, such as CdS, CdTe, GaAs applied. A glass coating is applied on the outside, the refractive indices of the layers being matched to one another in such a way that the glass fiber can be used as a light guide. The semiconductor layer achieves special transmission properties for light signals in a selected wavelength range.

However, such a glass fiber is only limited to special areas of application in light amplifiers or laser applications.

The object of the invention is to provide a fiber with new properties which enable the fiber to be used in a variety of ways, including beyond the field of the textile industry.

This object is achieved in the case of a fiber according to the type mentioned at the outset in that at least one semiconductor layer is part of an electronic component.

The fiber core thus serves as a carrier for one or more semiconductor layers which, in contrast to the prior art, are now not only used to selectively influence a light signal conducted through the fiber core, but rather are part of an electronic component or, if appropriate, are electronic together with further layers Form component.

Here, the term “electronic component” is to be understood in its broadest possible meaning, for example as a component with at least one semiconductor layer, generally is to be understood with at least two semiconductor layers, which has a defined current / voltage characteristic. Furthermore, to delimit the term "electronic component" it can be used that at least two layers of the electronic component, that is to say at least one semiconductor layer and possibly a further functional layer which does not consist of a semiconductor material, have a common functional surface which is part of the electronic component.

If at least two semiconductor layers are provided, the common functional layer will usually be a boundary layer, in which a special electronic property results, as is known at boundary layers of differently doped semiconductors, for example with p- or n-doping.

In a simple case, it could, for example, be a barrier layer (pn junction, pin junction, etc.). The term "electronic component" is intended to encompass all known and conceivable designs, which not only include, for example, diodes, transistors, thyristors, ICs, etc., but also include components with at least one semiconductor layer with which radiation signals are converted into electrical signals ( (eg photo diodes, photo transistors, photo resistors, photovoltaic elements) or electrical signals can be converted into radiation signals (e.g. LEDs). Sensors and electrodes for receiving or delivering electrical, electrochemical, thermal or other signals are also to be understood as such. It is also conceivable to use the electronic components for medical and biological purposes, for example as microelectrodes for retinal implants or as a three-dimensional network structure for large-area contacting of electrolytes, for example with the possibility of three-dimensional storage or contacting of cells.

Unlike known electronic components, which always have a planar structure, the electronic components according to the invention are, however, formed on fibers, as a result of which a completely new spectrum of applications for electronic components is opened up. The usually flexible fibers can be e.g. Further processing to a wide variety of textile products that have properties that are otherwise reserved for electronic circuits on solid planar substrates. A textile product is understood here to mean any product which consists wholly or partly of the fibers according to the invention, that is to say in particular by means of weaving, braiding or other substances known in textile technology.

In the context of this application, the term “fiber” should not only be understood to mean cylindrical, elongated structures in cross section, but also elliptical, oval, square or other shaped structures in cross section, provided that their cross section in width and height (or their largest diameter) is significantly smaller (at least an order of magnitude) than its length. Such fibers, which can be produced in textile technology by splitting, for example semicircular structures, are also to be understood as such. However, films are no longer to be included in this term since they only have a considerably smaller thickness than length and width. The fibers can be endless. However, it can also be short fibers with a length of up to a few centimeters or Trade millimeters if their cross-section has correspondingly smaller dimensions.

Due to the usually only small thickness of the semiconductor layers, the fibers usually remain flexible even when a large number of layers are applied one above the other on the fiber core. The mechanical properties such as flexibility and tensile strength as well as the total diameter of the fibers, which is preferably in the order of magnitude between 1 μm and 10 mm, are therefore generally determined primarily by the fiber core.

Any type of flexible fiber material can be considered as the fiber core, in particular chemical or glass fibers. Fine metal wires are also suitable as fiber core, whereas vegetable or animal fibers are less suitable due to their irregular surface properties or at least require special pretreatment in order to achieve a uniform surface texture. The fibers can have a fiber core which can be electrically conductive or can be coated in an electrically conductive manner. An electrically non-conductive fiber core is also conceivable. This could e.g. consist of glass or plastic or possibly ceramic. It can also be an optically conductive fiber core, e.g. act out of glass or plastic.

In principle, the semiconductor layers can consist of all semiconductors also known in planar semiconductor technology, that is to say in particular of crystalline or amorphous inorganic semiconductors or also of organic semiconductors. In the simplest case, a single semiconductor layer is applied to an electrically insulating fiber core, which may possibly still be covered by a protective layer. This semiconductor layer can form a photoresistor, for example, so that fibers of this type can be used, for example, in articles of clothing in which certain functions are to be controlled as a function of the brightness.

According to a further embodiment of the invention, a plurality of semiconductor layers are arranged one above the other in a direction perpendicular to a longitudinal direction of the fiber core.

In this way, in principle, all electronic or optoelectronic semiconductor components can be built on the fiber core, as are known from planar semiconductor technology. The semiconductor layers arranged one above the other can be functionally assigned to a single electronic component or to several different electronic components.

Alternatively or in addition to this, a plurality of semiconductor layers can be arranged next to one another or one behind the other along a longitudinal direction of the fiber core. Overlapping structures are also conceivable.

It is therefore not necessary that the individual semiconductor layers each extend over the entire fiber length. Rather, components can be realized as a result whose semiconductor layers are not arranged one above the other, but next to one another or one behind the other, or in whole or in part overlapping. The fiber core preferably carries one or more functional layers which do not consist of a semiconductor.

These functional layers can be, for example, layers of metals, dielectrics or plastics, for example for use as contact layers, insulation or passivation layers or for encapsulating the fiber. These functional layers can be applied directly on the fiber core, between semiconductor layers or also on the outermost semiconductor layer.

In some applications of the new fiber, e.g. in the case of the photoresistor mentioned above, it is not essential for the function that the semiconductor layers and possibly the functional layers are applied with a uniform layer thickness, that is to say approximately symmetrically with respect to a longitudinal axis of the fiber core, provided that it should be cylindrical.

In the majority of applications, however, it will be preferred if the at least one semiconductor layer and possibly the one or more functional layers are designed as cladding layers arranged coaxially to a longitudinal direction of the fiber core.

In this way it is ensured that the fiber according to the invention has highly predictable properties due to the cylindrical symmetry, since the thicknesses of the semiconductor layers and of the functional layers are constant over the entire circumference of the fiber. If, for example, a photodiode is formed by the layers arranged one above the other or next to one another, the fiber can be used as a photovoltaic element with which current can be generated from incident light. If such fibers are woven into a fabric, knitted, knitted, braided or placed in a scrim or nonwoven, then irregularly shaped bodies can also be covered. In this way, previously useless areas for photovoltaic electricity generation can be developed. The fabrics can also be used for garments, which can then be given special electrical properties without external energy supply.

On the other hand, if the electronic component is a light-emitting diode, then textile structures, e.g. Manufacture fabrics that emit light when a voltage is applied without having to couple light into glass fibers in a complicated manner. The implementation of visual displays is also conceivable in this way.

However, more complicated electronic components are also possible, in particular all types of transistors which can be interconnected in a manner known per se to form more complex functional groups such as memory cells, logic circuits, oscillator circuits or amplifier circuits. In principle, all types of transistor types can also be implemented, for example transistors in MOS technology or junction transistor. Here, a plurality of electronic components can be arranged one above the other in a direction perpendicular to the longitudinal direction of the fiber core.

In this way, comparatively complex circuit structures can be implemented despite the relatively small carrier area.

Additionally or alternatively, a plurality of electronic components can be arranged one behind the other along the longitudinal direction of the fiber core or next to one another along a fiber section. Structures are therefore conceivable that extend along a certain length section of the fiber over different peripheral sections, e.g. Circular sector sections or ellipse sections, or also structures that extend in succession in the longitudinal direction in each case over different length sections. Combinations are of course also possible.

This allows semiconductor circuits to be implemented, the components of which are lined up on a cord like pearls. Further levels of semiconductor components can also be arranged above this first level, so that two-dimensional or possibly three-dimensional circuit structures can be implemented.

In addition, in this development it is preferred if a plurality of electronic components are connected along the longitudinal direction of the fiber core in such a way that a contact layer of a semiconductor component is electrically conductively connected to a contact layer of an adjacent semiconductor component. In a simple case, this can be, for example, a plurality of photodiodes which are connected in series along the fiber core, so that their individual voltages add up. The connection between the adjacent photodiodes can be made, for example, in that an external contact layer of a photodiode extends so far along the longitudinal direction of the fiber core that it covers an internal contact layer which in turn extends from an adjacent photodiode. If several fibers are connected in parallel with photodiodes connected in series in this way, a photovoltaic voltage source can be built up which has a high output voltage but a relatively low internal resistance. In addition, the reliability can be increased by connecting the photodiodes in series, since a short circuit in a fiber only affects the photodiode located at the location of the short circuit, but the fiber otherwise remains functional.

In another embodiment of the invention, the fiber core is a light guide.

In this way it is possible to use optoelectronic circuits which are used in optical communication e.g. can be used as detectors instead of being applied directly to the light guide on an independent carrier.

In a further development of this embodiment, at least one coupling element is provided on the light guide, through which light can be coupled out or can be coupled into the light guide. An adjacent layer, onto which the outcoupled light is guided, can either adjoin the outcoupling element along the longitudinal direction of the light guide or also perpendicularly thereto. This makes it possible to couple one or more electronic components, which are applied to the light guide, to the signals carried in the light guide, so that in this way, for example, a detector with associated evaluation electronics can be formed directly on the light guide.

While in the variants of the invention explained above, there is at least one electronic component on each fiber, an electronic component can also be produced by joining at least two fibers. For this purpose, at least two fibers have a semiconductor layer which have at least one contact point which is part of the electronic component.

The contact point thus acts as a functional layer, e.g. as a pn junction. For example, a large-area display can be built up if the crossing points of a network of fibers of this type are formed and controlled, for example, as LEDs for emitting light.

In another embodiment of the invention, at least two fibers are electrically connected to one another, preferably at fiber ends or crossing points of the fibers.

In this way, the spatial limitation to two dimensions, namely along the longitudinal direction of the fiber core and perpendicular to it, can be at least partially eliminated. For example, a large number of fibers can be Structure arranged to each other and electrically connected to each other at the points of contact. In this way, three-dimensional circuit structures can be built up, as are known per se from planar semiconductor technology. However, due to the flexibility of the fibers, the network structure as a whole remains flexible, which opens up new application possibilities. For example, it is possible to produce larger fiber composites, for example to generate a relatively powerful and fail-safe power supply in the form of a "solar network".

According to a further embodiment of the invention, even more complex and extensive three-dimensional circuit structures can be achieved in the form of spacer fabrics or spacer fabrics as well as pure 3-D textile structures.

It goes without saying that the features mentioned above and those yet to be explained below can be used not only in the combination indicated in each case, but also in other combinations or on their own without departing from the scope of the present invention.

Further features and advantages of the invention emerge from the following description of the exemplary embodiments with reference to the accompanying drawing. In it show:

Figure 1 shows a detail of a first embodiment of a fiber according to the invention in a perspective view. 2 shows a device for coating a fiber core in a PECVD process in a greatly simplified illustration;

3 shows a detail from a second exemplary embodiment of a fiber according to the invention in an axial section; and

Fig. 4 is an equivalent circuit diagram for the fiber of Fig. 3;

5 shows a detail from a third exemplary embodiment of a fiber according to the invention in an axial section;

Fig. 6 shows a fiber composite of a plurality of fibers, each of which has a common functional surface at their crossing points and

FIG. 7 shows an enlarged illustration of an electronic component which, according to FIG. 6, has two fibers which have a functional surface at an intersection point.

1 shows a perspective view, not to scale, of a section of a fiber according to the invention, which is designated overall by 10. The fiber 10 has a fiber core 12 with a longitudinal direction 13, which in the exemplary embodiment shown is a thin copper wire with a diameter of 50 μm. The copper wire is covered with a thin layer of lacquer, which protects the wire underneath from oxidation. A back contact layer 14 is applied to the circumference of the fiber core 12 and covers the fiber core 12 over its entire length. The rear contact layer 14 surrounds an n-doped semiconductor layer 16 on the circumference, which consists of amorphous silicon doped with phosphorus atoms. The n-doped semiconductor layer 16 covers an intrinsic semiconductor layer 18 made of undoped amorphous silicon. This is followed externally by a p-doped semiconductor layer 20, which consists of amorphous silicon doped with boron atoms.

The p-doped semiconductor layer 20 is circumferentially surrounded by a front contact layer 22, which consists of an electrically conductive, optically transparent oxide (TCO, transparent conductive oxide). Finally, a protective layer 24 made of an optically transparent plastic is applied over it, which protects the fiber 10 from mechanical damage.

In order to be able to contact the back contact layer 14, the fiber core 12 with the back contact layer 14 applied thereon extends so far beyond the other layers that space for a contact base 25 remains on the back contact layer 14. The contacting of the front contact layer 22 takes place via a contact ring 26, which extends through the protective layer 24 down to the front contact layer 22.

The three layers 16, 18 and 20 together form a pin photodiode, which can be used, for example, as a photovoltaic element for generating electricity. Light striking the fiber 10, which is indicated in FIG. 1 by the arrows 27, passes through the optically transparent protective layer 24, the underlying, likewise optically transparent front contact Layer 22 and the p-doped semiconductor layer 20 into the intrinsic semiconductor layer 18. There, the light generates electron-hole pairs due to the photo effect, which leads to an electrical voltage that can be tapped at the contact base 25 and the contact ring 24. However, the pin photodiode can also be used to generate light from electrical energy by applying an electrical voltage to the contact base 25 and the contact ring 26. In the intrinsic semiconductor layer 18, light quanta then arise through recombination of electron-hole pairs, which pass through the transparent front contact layer 22 and the protective layer 24 to the outside.

Conversely, such a structure or a similar structure can also be implemented for the generation of electromagnetic radiation from electrical energy. This is only indicated schematically by arrows 27 ', which are intended to indicate emitted radiation.

Furthermore, it should be noted that the function described here is not limited to light in the visible range, but can also be advantageously implemented with any electromagnetic radiation around the IR range, UV range or other wavelength ranges, provided that the radiation energy is converted into electrical energy or vice versa is possible through the semiconductor layer (s) and possibly further functional layers.

In principle, all conventional standard methods with which thin layers can be deposited on planar supports are suitable for producing the fibers according to the invention. However, since the deposition in the fibers according to the invention is not only in one spatial direction, but in all spatial directions, should the selected method enable spatially comparatively homogeneous deposition, ie also deposition from the side and from below.

The fiber shown in FIG. 1, the coating of which is approximately cylinder-symmetrical, was produced using a PECVD process (PECVD = plasma enhanced chemical vapor deposition). A device known per se that is suitable for carrying out this process is shown schematically in FIG. 2 in a greatly simplified illustration. The device has a process chamber 30 in which a vacuum can be generated with the aid of a vacuum pump 32. An object to be coated can be introduced into the process chamber 30 via a lock 34 and attached to a plate 36. Process gases can also be admitted into the process chamber 30 via a controllable gas inlet 37. In the process chamber 30 electrodes 38 and 40 are arranged which, when a high-frequency voltage is applied, generate a plasma from the let-in process gases, which surrounds the object fastened on the plate 36 and from which atoms are deposited on the object.

At the start of production, the coated copper wire 12 serving as the fiber core was first cleaned, then coated with a thin silver layer 14 and, after a further cleaning step, introduced into the process chamber 30 of the PECVD device. If, for example, a silver wire is to be used instead of a copper wire, an additional front contact layer 14 can be dispensed with, since semiconductors can be deposited directly on cleaned silver surfaces. Although the copper wire 12 was placed directly on the plate 36, functional photodiodes could be produced on the copper wire 12 despite the then rather uneven deposition. The end sections on both sides of the copper wire were covered so that they were not coated and could therefore later be provided with the contact base 25.

The homogeneity and accuracy of the deposition can, however, be improved if the copper wire 12 is suspended or clamped at a height above the plate 36 in which the top side of planar substrates for conventional components are usually located. A further improvement in the deposition homogeneity can be achieved if the copper wire 12 is rotated about its longitudinal direction during the deposition process.

Subsequently, silane (SiH ₄ ) and phosphine (PH ₄ ) were introduced into the process chamber 30 via the gas inlet 37 in order to deposit the n-doped amorphous silicon layer 16 on the fiber core 12 coated with silver. In a second process step, only silane was introduced into the process chamber 30 in order to apply the intrinsic silicon layer 18 to the n-doped layer 16 underneath. Then, in a third process step, the p-doped amorphous silicon layer 18 was applied by introducing silane and diborane (B ₂ H ₆ ) into the process chamber 30. In order to avoid contamination during separation, a device with two or more process chambers, which are connected to one another via a lock, can also be used. At each process step, the fiber 10 is then transferred to another process chamber via the lock. The front contact layer 20 was then applied to the outer p-doped semiconductor layer 18 by sputtering on a TCO material. The contact ring 26 was then applied by appropriately masking the fiber 10 and then exposing it to a metal vapor mist. The fiber 10 was then provided with the protective layer 24 by now covering the contact element 26 and depositing a transparent plastic on the front contact layer 22.

For the production of continuous fibers, the process just explained is to be modified in such a way that the fiber core is passed through a separation device in an endless process. Such endless processes are already used in the production of conventional planar solar cells. The two electrodes 38, 40 can then e.g. be replaced by ring electrodes through which the continuous fiber core is passed.

If, instead of silicon or another inorganic material, but an organic material is to be used as the semiconductor, the semiconductor layers can be applied to the — possibly endless — fiber core in a comparatively simple manner in a dipping process.

FIG. 3 shows, in an axially sectioned illustration, likewise not to scale, a section of another fiber 50 according to the invention, in which several photodiodes are connected in series. In contrast to FIG. 1, in the case of the fiber 50, the layers applied to the fiber core 12 are not continuous over the entire length of the fiber core 12. but only applied in sections to the fiber core 12.

Therefore, in the detail shown in FIG. 3, two back contact layers 14a and 14b can be seen, which are spaced apart in the direction of the fiber longitudinal direction 13. The two back contact layers 14a and 14b are each surrounded on the circumference by a p-doped semiconductor layer 16a and 16b, an intrinsic semiconductor layer 18a and 18b and an n-doped semiconductor layer 20a and 20b. In addition, front contact layers 22a and 22b are respectively applied to the two outer n-doped semiconductor layers 20a and 20b. This creates two individual photodiodes 28a and 28b, which are arranged one behind the other in the direction of the fiber longitudinal direction 13 on the fiber core 12.

The front contact layer 22a of the photodiode 28a protrudes in the direction of the longitudinal direction 13 beyond the side surfaces of the semiconductor layers 16a, 18a and 20a, to the extent that the rear contact layer 14 of the adjacent photodiode 28b is partially covered and contacted. In this way, the two photodiodes 28a and 28b are connected in series, as can be seen in the simplified equivalent circuit diagram shown in FIG. 4. The voltage that can be tapped between the back contact layer 14a at one end of the fiber 10 and the front contact layer 22b at the opposite end of the fiber 10 thus corresponds to the sum of the individual voltages that are generated by the intermediate photodiodes when light 28a and 28b are incident. It goes without saying that the arrangement shown in FIG. 3 can be continued periodically in the longitudinal direction 13 in a number limited only by the internal resistance.

As a modification of the embodiment according to FIG. 3, it goes without saying that individual semiconductor or functional layers can of course also be arranged along the longitudinal axis next to one another over a certain area, for example to form a spatial structure with at least partially overlapping areas arranged above it (not shown) ).

5 shows, in an axially sectioned illustration, likewise not to scale, a section of another fiber 60 according to the invention. The fiber core of fiber 60 consists of an optical fiber 62, which has a core 64 and a jacket 66. The cladding 66 has a lower refractive index than the core 64, so that light coupled into the light guide 62 predominantly propagates in the core 64, as indicated by the arrows 67.

The cladding 66 of the light guide 62 carries along a section a coupling element 68 in the form of a cladding-shaped layer, which consists of a glass or a semiconductor with the same or a higher refractive index than the cladding 66. Further layers are applied to the coupling element 68, of which only the layers 70a, 70b and 70c are shown in FIG. 5 by way of example. These layers are semiconductor layers and possibly also functional layers made of other materials, which together form an electronic component, for example a sensor, which can be coupled to an amplifier element. During operation, the coupling element 68 couples out a (small) part of the light 67 guided in the light guide 62 and into the electronic component above it. The amount of light coupled out by the coupling element 68 depends in particular on the refractive index of the coupling element 68 and on its length in the direction of the longitudinal direction 13. The electronic component generates electrical signals that can be evaluated in a conventional manner. Further semiconductor components required for evaluation can be applied, for example, next to the coupling element 68 on the light guide 62. The coupling element 68 thus forms, together with the layers above, a sensor for the detection of light 67 guided in the light guide 62.

In principle, however, it is also possible to use the electronic component through a light-generating optoelectronic component in order to couple light generated therefrom into the light guide 62 with the aid of the coupling element 68.

6 and 7 show purely schematically a fiber composite 82 which consists of a plurality of intersecting fibers 80, 80a which form a common interface at intersection points 84. The arrangement is such that the function of an electronic component 86 is only achieved in cooperation with this interface. The component 86 formed in this way could, for example, be a light-emitting element which emits light when both fibers 80, 80a are connected to a voltage U + or U-. For control purposes, the transverse fibers are connected to U + via switches 87, 88, 89, while the longitudinal fibers are connected to U- via switches 90, 91, 92, 93, 94. When the switches are closed, the relevant fenden crossing point 84 emits light, as indicated in combination with the two closed switches 87, 90 at the crossing point 84 by the radiation 27. In this way, a large-scale display can be realized, the points of which can be individually addressed.

Claims

claims

1. Fiber with a fiber core (12; 62), on which at least one semiconductor layer (16, 18, 20; 70a, 70b, 70c) is received, characterized in that the at least one semiconductor layer (16, 18, 20; 70a , 70b, 70c) is part of an electronic component.

2. Fiber according to claim 1, characterized in that at least two semiconductor layers (16, 18, 20; 70a, 70b, 70c) have at least one common functional surface which is part of the electronic component.

3. Fiber according to claim 1 or 2, characterized in that the semiconductor layers (16, 18, 20; 70a, 70b, 70c) are received on a fiber core (12; 62).

4. Fiber according to claim 1, 2 or 3, characterized in that a plurality of semiconductor layers (16, 18, 20; 70a, 70b, 70c) are arranged one above the other in a direction perpendicular to a longitudinal direction (13) of the fiber core (12; 62) ,

5. Fiber according to one of the preceding claims, characterized in that a plurality of semiconductor layers (16a, 16b, 18a, 18b, 20a, 20b) along a longitudinal direction (13) of the fiber core (12) are arranged one behind the other or along a length of the fiber side by side.

6. Fiber according to one of the preceding claims, characterized by at least one functional layer (14, 22, 24; 68) which does not consist of a semiconductor.

7. Fiber according to one of the preceding claims, characterized in that at least one of the semiconductor layers (16, 18, 20; 70a, 70b, 70c) or functional layer (s) (14, 22, 24; 68) as the fiber core (12; 62) with an approximately uniform layer thickness surrounding the cladding layer.

8. Fiber according to one of the preceding claims, characterized in that a plurality of electronic components are arranged one above the other in a direction perpendicular to the longitudinal direction (13) of the fiber core (12).

9. Fiber according to one of the preceding claims, characterized in that at least two of the semiconductor layers (16, 18, 20; 70a, 70b, 70c) or functional layer (s) form at least one electronic component which converts radiation energy, in particular optical energy , in electrical energy or electrical energy in radiation energy, which is designed as a sensor or electrode for detecting or emitting electrical or electrochemical signals, or which is designed for processing electrical signals.

10. Fiber according to one of the preceding claims, characterized in that a plurality of electronic components are arranged one above the other in a direction perpendicular to the longitudinal direction (13) of the fiber core (12).

11. Fiber according to one of the preceding claims, characterized in that a plurality of electronic components (28a, 28b) along the longitudinal direction (13) of the fiber core (12) one behind the other or along a length of the fiber are arranged side by side.

12. Fiber according to claim 11, characterized in that along the longitudinal direction (13) of the fiber core (12) a plurality of electronic components (28a, 28b) are connected such that a contact layer (22a) of a component (28a) is electrically conductive with a contact layer (14b) of an adjacent component (28b) is connected.

13. Fiber according to one of the preceding claims, characterized in that the fiber core (64) is a light guide (62) or an electrical conductor.

14. Fiber according to claim 13, characterized in that on the light guide (62) at least one coupling element (68) is provided, through which light can be coupled out of the light guide (62) or can be coupled therein.

15. Fiber combination with at least two fibers (86, 86a), in particular according to one of the preceding claims, each having at least one semiconductor layer, at least one contact point (84) between the fibers (86, 86a) being part of an electronic component (86).

16. Electronic circuit with at least one fiber (10; 50; 60; 80, 80a; 100, 100a, 100b, 100c) or fiber combination (82; 102) according to one of the preceding claims, the min- at least has an electronic component (28a, b; 86) which is designed as part of a solar cell, an optical display, a sensor or an electrode for optical, electrical or electrochemical signals.

17. Electronic circuit with a plurality of fibers or fiber combinations according to one of claims 1 to 15, which are preferably electrically connected to one another at fiber ends or crossing points (86) of the fibers (10; 50; 60; 80, 80a).

18. Textile product, in particular fabric, scrim, knitted fabric, braid, knitted fabric, with at least one fiber (10; 50; 60; 80, 80a), fiber combination or electronic circuit according to one of claims 1 to 17.

19. Textile product according to claim 18, which has a spatially extended structure, in particular spacer fabric, spacer fabric, 3D shape knitted fabric, 3-D braid, 3-D fabric, 3-D fabric.