WO2002041080A3 - Process for reducing edge roughness in patterned photoresist - Google Patents

Process for reducing edge roughness in patterned photoresist Download PDF

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Publication number
WO2002041080A3
WO2002041080A3 PCT/GB2001/004910 GB0104910W WO0241080A3 WO 2002041080 A3 WO2002041080 A3 WO 2002041080A3 GB 0104910 W GB0104910 W GB 0104910W WO 0241080 A3 WO0241080 A3 WO 0241080A3
Authority
WO
WIPO (PCT)
Prior art keywords
photoresist
patterned photoresist
vapor
substrate
edge roughness
Prior art date
Application number
PCT/GB2001/004910
Other languages
French (fr)
Other versions
WO2002041080A2 (en
Inventor
John Scott Hallock
Robert Douglas Mohondro
Original Assignee
Axcelis Tech Inc
Eaton Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Tech Inc, Eaton Ltd filed Critical Axcelis Tech Inc
Priority to AU2002212504A priority Critical patent/AU2002212504A1/en
Publication of WO2002041080A2 publication Critical patent/WO2002041080A2/en
Publication of WO2002041080A3 publication Critical patent/WO2002041080A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Abstract

A process for reducing roughness from a surface of a patterned photoresist. The process includes exposing a substrate having the patterned photoresist thereon to a vapor, wherein the vapor penetrates into and/or reacts with the surface of the photoresist. The substrate having the patterned photoresist thereon is then heated to a temperature and for a time sufficient to cause the surface of the photoresist to flow and/or react with the vapor wherein the surface roughness decreases. Optionally, the substrate is exposed to radiation during the process to increase the etch resistance of the photoresist and/or facilitate the reaction of the vapor with the surface of the photoresist.
PCT/GB2001/004910 2000-11-14 2001-11-06 Process for reducing edge roughness in patterned photoresist WO2002041080A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002212504A AU2002212504A1 (en) 2000-11-14 2001-11-06 Process for reducing edge roughness in patterned photoresist

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/712,443 US6582891B1 (en) 1999-12-02 2000-11-14 Process for reducing edge roughness in patterned photoresist
US09/712,443 2000-11-14

Publications (2)

Publication Number Publication Date
WO2002041080A2 WO2002041080A2 (en) 2002-05-23
WO2002041080A3 true WO2002041080A3 (en) 2003-01-16

Family

ID=24862133

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2001/004910 WO2002041080A2 (en) 2000-11-14 2001-11-06 Process for reducing edge roughness in patterned photoresist

Country Status (4)

Country Link
US (2) US6582891B1 (en)
AU (1) AU2002212504A1 (en)
TW (1) TW573215B (en)
WO (1) WO2002041080A2 (en)

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US6709807B2 (en) 2004-03-23
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