WO2002045140A3 - Semiconductor structures having a compliant substrate - Google Patents

Semiconductor structures having a compliant substrate Download PDF

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Publication number
WO2002045140A3
WO2002045140A3 PCT/US2001/032597 US0132597W WO0245140A3 WO 2002045140 A3 WO2002045140 A3 WO 2002045140A3 US 0132597 W US0132597 W US 0132597W WO 0245140 A3 WO0245140 A3 WO 0245140A3
Authority
WO
WIPO (PCT)
Prior art keywords
monocrystalline
accommodating buffer
buffer layer
layer
silicon
Prior art date
Application number
PCT/US2001/032597
Other languages
French (fr)
Other versions
WO2002045140A2 (en
Inventor
Jamal Ramdani
Lyndee L Hilt
Alexander A Demkov
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to JP2002547210A priority Critical patent/JP2004515074A/en
Priority to EP01981781A priority patent/EP1348231A2/en
Priority to KR10-2003-7006940A priority patent/KR20030051868A/en
Priority to AU2002213401A priority patent/AU2002213401A1/en
Publication of WO2002045140A2 publication Critical patent/WO2002045140A2/en
Publication of WO2002045140A3 publication Critical patent/WO2002045140A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides

Abstract

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer (26). Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.
PCT/US2001/032597 2000-11-22 2001-10-18 Semiconductor structures having a compliant substrate WO2002045140A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002547210A JP2004515074A (en) 2000-11-22 2001-10-18 Semiconductor structure having compliant substrate
EP01981781A EP1348231A2 (en) 2000-11-22 2001-10-18 Semiconductor structures having a compliant substrate
KR10-2003-7006940A KR20030051868A (en) 2000-11-22 2001-10-18 Semiconductor structures having a compliant substrate
AU2002213401A AU2002213401A1 (en) 2000-11-22 2001-10-18 Semiconductor structures having a compliant substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US72156600A 2000-11-22 2000-11-22
US09/721,566 2000-11-22

Publications (2)

Publication Number Publication Date
WO2002045140A2 WO2002045140A2 (en) 2002-06-06
WO2002045140A3 true WO2002045140A3 (en) 2003-02-06

Family

ID=24898468

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/032597 WO2002045140A2 (en) 2000-11-22 2001-10-18 Semiconductor structures having a compliant substrate

Country Status (6)

Country Link
EP (1) EP1348231A2 (en)
JP (1) JP2004515074A (en)
KR (1) KR20030051868A (en)
AU (1) AU2002213401A1 (en)
TW (1) TW531786B (en)
WO (1) WO2002045140A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8227820B2 (en) 2005-02-09 2012-07-24 The Regents Of The University Of California Semiconductor light-emitting device
KR100664986B1 (en) 2004-10-29 2007-01-09 삼성전기주식회사 Nitride based semiconductor device using nanorods and method for manufacturing the same
US8946674B2 (en) 2005-08-31 2015-02-03 University Of Florida Research Foundation, Inc. Group III-nitrides on Si substrates using a nanostructured interlayer
RU2326993C2 (en) * 2006-07-25 2008-06-20 Самсунг Электро-Меканикс Ко., Лтд. Method of nitride monocrystal growth on silicon plate, nitride semi-conductor light emitting diode, which is produced with its utilisation, and method of such production
US8222057B2 (en) 2006-08-29 2012-07-17 University Of Florida Research Foundation, Inc. Crack free multilayered devices, methods of manufacture thereof and articles comprising the same
FR2921200B1 (en) * 2007-09-18 2009-12-18 Centre Nat Rech Scient EPITAXIC MONOLITHIC SEMICONDUCTOR HETEROSTRUCTURES AND PROCESS FOR THEIR MANUFACTURE
US20120292648A1 (en) * 2011-05-16 2012-11-22 Kabushiki Kaisha Toshiba Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
US9312436B2 (en) 2011-05-16 2016-04-12 Kabushiki Kaisha Toshiba Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
FR3079534B1 (en) * 2018-03-28 2022-03-18 Soitec Silicon On Insulator METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF GAAS MATERIAL AND SUBSTRATE FOR GROWTH BY EPITAXIS OF A MONOCRYSTALLINE LAYER OF GAAS MATERIAL

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0548072A (en) * 1991-08-12 1993-02-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor element
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5556463A (en) * 1994-04-04 1996-09-17 Guenzer; Charles S. Crystallographically oriented growth of silicon over a glassy substrate
US5741724A (en) * 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
US6103403A (en) * 1997-05-15 2000-08-15 University Of Kentucky Research Foundation Intellectual Property Development Clathrate structure for electronic and electro-optic applications
US6113690A (en) * 1998-06-08 2000-09-05 Motorola, Inc. Method of preparing crystalline alkaline earth metal oxides on a Si substrate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0548072A (en) * 1991-08-12 1993-02-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor element
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5556463A (en) * 1994-04-04 1996-09-17 Guenzer; Charles S. Crystallographically oriented growth of silicon over a glassy substrate
US5741724A (en) * 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
US6103403A (en) * 1997-05-15 2000-08-15 University Of Kentucky Research Foundation Intellectual Property Development Clathrate structure for electronic and electro-optic applications
US6113690A (en) * 1998-06-08 2000-09-05 Motorola, Inc. Method of preparing crystalline alkaline earth metal oxides on a Si substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 017, no. 344 (E - 1390) 29 June 1993 (1993-06-29) *

Also Published As

Publication number Publication date
KR20030051868A (en) 2003-06-25
JP2004515074A (en) 2004-05-20
AU2002213401A1 (en) 2002-06-11
EP1348231A2 (en) 2003-10-01
TW531786B (en) 2003-05-11
WO2002045140A2 (en) 2002-06-06

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