WO2002048701A9 - Nanosensors - Google Patents

Nanosensors

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Publication number
WO2002048701A9
WO2002048701A9 PCT/US2001/048230 US0148230W WO0248701A9 WO 2002048701 A9 WO2002048701 A9 WO 2002048701A9 US 0148230 W US0148230 W US 0148230W WO 0248701 A9 WO0248701 A9 WO 0248701A9
Authority
WO
WIPO (PCT)
Prior art keywords
nanowire
article
analyte
sample
nanowires
Prior art date
Application number
PCT/US2001/048230
Other languages
French (fr)
Other versions
WO2002048701A3 (en
WO2002048701A2 (en
WO2002048701A8 (en
Inventor
Charles M Lieber
Hongkun Park
Qingqiao Wei
Yi Cui
Wenjie Liang
Original Assignee
Harvard College
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harvard College filed Critical Harvard College
Priority to DE60135775T priority Critical patent/DE60135775D1/en
Priority to EP01990181A priority patent/EP1342075B1/en
Priority to AU2002229046A priority patent/AU2002229046B2/en
Priority to CA2430888A priority patent/CA2430888C/en
Priority to KR1020087027974A priority patent/KR100984603B1/en
Priority to AU2904602A priority patent/AU2904602A/en
Priority to KR10-2003-7007723A priority patent/KR20030055346A/en
Priority to JP2002549958A priority patent/JP4583710B2/en
Publication of WO2002048701A2 publication Critical patent/WO2002048701A2/en
Publication of WO2002048701A3 publication Critical patent/WO2002048701A3/en
Publication of WO2002048701A9 publication Critical patent/WO2002048701A9/en
Publication of WO2002048701A8 publication Critical patent/WO2002048701A8/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
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    • G01N33/48Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/543Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
    • G01N33/54366Apparatus specially adapted for solid-phase testing
    • G01N33/54373Apparatus specially adapted for solid-phase testing involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
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    • G11C13/0014RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
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    • H01L29/0673Nanowires or nanotubes oriented parallel to a substrate
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    • H10K85/20Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221Carbon nanotubes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
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    • GPHYSICS
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    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2610/00Assays involving self-assembled monolayers [SAMs]
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    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10Resistive cells; Technology aspects
    • G11C2213/17Memory cell being a nanowire transistor
    • GPHYSICS
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    • G11C2213/70Resistive array aspects
    • G11C2213/81Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
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    • Y10S977/762Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
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    • Y10S977/953Detector using nanostructure
    • Y10S977/957Of chemical property or presence

Definitions

  • Another method for detecting an analyte comprises contacting a nanowire with a sample and determining a property associated with the nanowire. A change in the property of the nanowire indicates the presence or quantity of the analyte in the sample.
  • nanowire sensor device comprising a semiconductor nanowire and a binding partner having a specificity for a selected moiety.
  • the nanowire has an exterior surface formed thereon to form a gate electrode.
  • the nanowire also has a first end in electrical contact with a conductor to form a source electrode and a second end in contact with a conductor to form a drain electrode.
  • an analyte-gated field effect transistor having a predetermined current- voltage characteristic and adapted for use as a chemical or biological sensor.
  • Fig. 8c shows current-voltage (I-V) measurements for a single-walled carbon nanotube device of Fig. 8b in CrClx.
  • Fig. 9c show the relative conductance of the nanosensors with changes in pH levels.
  • Fig. lOe shows the conductance of a Biotin modified nanosensor exposed to a blank buffer solution, then to a solution containing Sfreptavidin, and then again to a blank buffer solution.
  • Fig. 15 is a schematic view of an InP nanowire.
  • Fig. 15b shows the change in luminescence of a nanowire of Fig. 15a over time as pH varies.
  • a “nanowire” is an elongated nanoscale semiconductor which, at any point along its length, has at least one cross-sectional dimension and, in some embodiments, two orthogonal cross-sectional dimensions less than 500 nanometers, preferably less than 200 nanometers, more preferably less than 150 nanometers, still more preferably less than 100 nanometers, even more preferably less than 70, still more preferably less than 50 nanometers, even more preferably less than 20 nanometers, still more preferably less than 10 nanometers, and even less than 5 nanometers.
  • the cross-sectional dimension can be less than 2 nanometers or 1 nanometer.
  • electrically coupled when used with reference to a nanowire and an analyte, or other moiety such as a reaction entity, refers to an association between any of the analyte, other moiety, and the nanowire such that electrons can move from one to the other, or in which a change in an electrical characteristic of one can be determined by the other. This can include electron flow between these entities, or a change in a state of charge, oxidation, or the like that can be determined by the nanowire.
  • electrical coupling can include direct covalent linkage between the analyte or other moiety and the nanowire, indirect covalent coupling (e.g.
  • polypeptide polypeptide
  • peptide protein
  • protein protein
  • amino acid polymers in which one or more amino acid residue is an artificial chemical analogue of a corresponding naturally occurring amino acid, as well as to naturally occurring amino acid polymers.
  • amino acid polymers in which one or more amino acid residue is an artificial chemical analogue of a corresponding naturally occurring amino acid, as well as to naturally occurring amino acid polymers.
  • the term also includes variants on the traditional peptide linkage joining the amino acids making up the polypeptide.
  • nanowires can be grown on and/or applied to surfaces in patterns useful for electronic devices in a manner similar to techniques described herein involving nanowires, without undue experimentation.
  • the nanowires should be able to be formed of at least one micron, preferably at least three microns, more preferably at least five microns, and more preferably still at least ten or twenty microns in length, and preferably are less than about 100 nanometers, more preferably less than about 75 nanometers, and more preferably less than about 50 nanometers, and more preferably still less than about 25 nanometers in thickness (height and width).
  • nanowire ropes can be used in the invention, individual nanowires are preferred.
  • the invention may utilize metal-catalyzed CVD to synthesize high quality individual nanowires such as nanotubes for molecular electronics.
  • CVD synthetic procedures needed to prepare individual wires directly on surfaces and in bulk form are known, and can readily be carried out by those of ordinary skill in the art. See, for example, Kong, et al, “Synthesis of Individual Single- Walled Carbon Nanotubes on Patterned Silicon Wafers", Nature 395, 878-881 (1998); Kong, et al, “Chemical Vapor Deposition of Methane for Single- Walled Carbon Nanotubes” Chem. Phys. Lett.
  • the catalyst is not limited to Au only.
  • a wide rage of materials such as (Ag, Cu, Zn, Cd, Fe, Ni, Co...) can be used as the catalyst.
  • any metal that can form an alloy with the desired semiconductor material, but doesn't form more stable compound than with the elements of the desired semiconductor can be used as the catalyst.
  • the buffer gas can be Ar, N2, and others inert gases. Sometimes, a mixture of H2 and buffer gas is used to avoid undesired oxidation by residue oxygen. Reactive gas can also be introduced when desired (e.g. ammonia for GaN). The key point of this process is laser ablation generates liquid nanoclusters that subsequently define the size and direct the growth direction of the crystalline nanowires.
  • nanowires with uniform size (diameter) distribution can be produced, where the diameter of the nanowires is determined by the size of the catalytic clusters, as illustrated in Fig. 4.
  • nanowires with different lengths can be grown.
  • C-CVD catalytic chemical vapor deposition
  • the reactant molecules e.g., silane and the dopant
  • the doping element e.g. diborane and phosphane for p-type and n-type doped nanowire.
  • the doping concentration can be controlled by controlling the relative amount of the doping element introduced in the composite target.
  • ZnO/ZnS/ZnSe/ZnTe CdS/CdSe/CdTe, HgS/HgSe/HgTe, BeS/BeSe/BeTe/MgS/MgSe
  • the reaction entity is positioned relative to the nanowire to cause a detectable change in the nanowire.
  • the reaction entity may be positioned within 100 nanometers of the nanowire, preferably with in 50 nanometers of the nanowire, and more preferably with in 10 nanometers of the nanowire, and the proximity can be determined by those of ordinary skill in the art.
  • the reaction entity is positioned less than 5 nanometers from the nanoscopic wire.
  • the reaction entity is positioned with 4 nm, 3 nm, 2 nm, and 1 nm of the nanowire.
  • the reaction entity is attached to the nanowire through a linker.
  • attached to in the context of a species relative to another species or to a surface of an article, means that the species is chemically or biochemically linked via covalent attachment, attachment via specific biological binding (e.g., biotin/streptavidin), coordinative bonding such as chelate/metal binding, or the like.
  • specific biological binding e.g., biotin/streptavidin
  • coordinative bonding such as chelate/metal binding, or the like.
  • the detector can be constructed for measuring a change in an electronic or magnetic property (e.g. voltage, current, conductivity, resistance, impedance, inductance, charge, etc.) can be used.
  • the detector typically includes a power source and a voltmeter or amp meter.
  • a conductance less than 1 nS can be detected.
  • a conductance in the range of thousandths of a nS can be detected.
  • the concentration of a species, or analyte may be detected from less than micromolar to molar concentrations and above.
  • amine groups may be attached by first making the nanoscale detector device hydrophilic by oxygen plasma, or an acid and/or oxidizing agent and the immersing the nanoscale detector device in a solution containing amino silane.
  • DNA probes may be attached by first attaching amine groups as described above, and immersing the modified nanoscale detector device in a solution containing bifunctional crosslinkers, if necessary, and immersing the modified nanoscale detector device in a solution containing the DNA probe.
  • the process may be accelerated and promoted by applying a bias voltage to the nanowire, the bias voltage can be either positive or negative depending on the nature of reaction species, for example, a positive bias voltage will help to bring negatively charged DNA probe species close to the nanowire surface and increase its reaction chance with the surface amino groups.
  • Figs. 5a and 5b show the conductance for a single silicon nanowire, native and coated, respectively, as a function of pH. As seen in Fig. 4, the conductance of the silicon nanowire changes from 7 to 2.5 when the sample is changed.
  • the silicon nanowire of Fig. 5 has been modified to expose amine groups at the surface of the nanowire.
  • Fig. 5 shows a change in response to pH when compared to the response in Fig. 4.
  • the modified nanowire of Fig. 5 shows a response to milder conditions such as, for example, those present in physiological conditions in blood.
  • Fig. 6 shows the conductance for a silicon nanowire having a surface modified with an oligonucleotide agent reaction entity. The conductance changes dramatically where the complementary oligonucleotide analyte binds to the attached oligonucleotide agent.
  • Fig. 10a shows an increase in conductance of a silicon nanowire(SiNW) modified with a reaction entity BSA Biotin, as it is exposed first to a blank buffer solution, and then to a solution containing an analyte, 250 nM Streptavidin.
  • Fig. 10b shows an increase in conductance of a SiNW modified with BSA Biotin, as it is exposed first to a blank buffer solution, and then to a solution containing 25 pM Streptavidin.
  • Fig. 10c shows no change in conductance of a bare SiNW as it is exposed first to a blank buffer solution, and then to a solution containing Streptavidin.
  • Fig. 10a shows an increase in conductance of a silicon nanowire(SiNW) modified with a reaction entity BSA Biotin, as it is exposed first to a blank buffer solution, and then to a solution containing an analyte, 250 nM Streptavidin.
  • Fig. 10b shows
  • Amine modified SiNW may also detect the presence of metal ions.
  • Fig. 12a shows the change in conductance of an amine modified SiNW when alternately exposed to a blank buffer solution and a solution containing ImM Cu(II).
  • Fig. 12b shows the increases in conductance as the amine modified SiNW is exposed to concentrations of Cu(II) from 0.1 mM to ImM.
  • Fig. 12c shows the increase in conductance verses Cu(II) concentration.
  • Fig. 12d shows no change in conductance of an unmodified SiNW when exposed first to a blank buffer solution and then to ImM Cu(II).
  • Fig. 12a shows the change in conductance of an amine modified SiNW when alternately exposed to a blank buffer solution and a solution containing ImM Cu(II).
  • Fig. 12b shows the increases in conductance as the amine modified SiNW is exposed to concentrations of Cu(II) from 0.1 mM to ImM.
  • Fig. 13a shows the conductance of a silicon nanowire modified with calmodulin, a calcium binding protein.
  • region 1 shows the conductance of the calmodulin modified silicon when exposed to a blank buffer solution.
  • Region 2 shows the drop in conductance of the same nanowire when exposed to a solution containing calcium ions noted in fig. 3 with a downward arrow.
  • Region 3 shows the increase in conductance of the same nanowire is again contacted with a blank buffer solution, indicated with an upward arrow. The subsequent return of conductance to its original level indicates that the calcium ion is reversible bound to the calmodulin modified nanowire.
  • Fig. 13b shows no change in conductance of an unmodified nanowire when exposed first to a blank buffer solution, and then to a solution containing calcium ions.
  • the invention provides a nanoscale electrically based sensor for determining the presence or absence of analytes suspected of being present in a sample.
  • the nanoscale provides greater sensitivity in detection than that provided by macroscale sensors.
  • Fig. 14a shows a calculation of sensitivity for detecting up to 5 charges compared to the doping concentration and nanowire diameter.
  • the sensitivity of the nanowire may be controlled by changing the doping concentration or by controlling the diameter of the nanowire. For example, increasing the doping concentration of a nanowire increases the ability of the nanowire to detect more charges. Also, a 20 nm wire requires less doping than a 5 nm nanowire for detecting the same number of charges.
  • Fig. 14b shows a calculation of a threshold doping density for detecting a single charge compared to the diameter of a nanowire. Again, a 20 nm nanowire requires less doping than a 5 nm nanowire to detect a single charge.
  • the nanowire of Fig. 16a defines the left-hand side as the source and the right hand side as the drain.
  • Fig. 16a also show that the nanowire device is disposed upon and electrically connected to two conductor elements 54.
  • Figs. 16a and 16b illustrate an example of a chemical /or ligand-gated Field Effects Transistor (FET).
  • FETs are well know in the art of electronics. Briefly, a FET is a 3 -terminal device in which a conductor between 2 electrodes, one connected to the drain and one connected to the source, depends on the availability of charge carriers in a channel between the source and drain.
  • the nanowire device illustrated in Figure A provides an FET device that may be contacted with a sample or disposed within the path of a sample flow. Elements of interest within the sample can contact the surface of the nanowire device and, under certain conditions, bind or otherwise adhere to the surface.
  • the exterior surface of the device may have reaction entities, e.g., binding partners that are specific for a moiety of interest. The binding partners will attract the moieties or bind to the moieties so that moieties of interest within the sample will adhere and bind to the exterior surface of the nanowire device.
  • An example of this is shown in Fig. 16c where there is depicted a moiety of interest 60 (not drawn to scale) being bound to the surface of the nanowire device.
  • one or more nanowires may be positioned in a microfluidic channel.
  • One or more different nanowires may cross the same microchannel at different positions to detect a different analyte or to measure flow rate of the same analyte.
  • one or more nanowires positioned in a microfluidic channel may form one of a plurality of analytic elements in a micro needle probe or a dip and read probe. The micro needle probe is implantable and capable of detecting several analytes simultaneously in real time.
  • one or more nanowires positioned in a microfluidic channel may form one of the analytic elements in a microarray for a cassette or a lab on a chip device.

Abstract

Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

Description

NANOSENSORS
This invention was sponsored by the National Science Foundation Grant No.
981226 and the Office of Naval Research Contract No. N00014-00-0-0476. The government has certain rights in the invention.
Related Applications
This application claims priority under 35 U.S.C. §119(e) to commonly-owned, co-pending U.S. Provisional Patent Application Serial Nos. 60/292,035, entitled
"Nanowire and Nanotube Nanosensors," filed May 18, 2001 and 60/254,745, entitled "Nanowire and Nanotube Nanosensors," filed December 11 , 2000, each of which is hereby incorporated by reference in its entirety.
Field of Invention The present invention relates generally to nanowires and nanoscale devices and more particularly to a nanoscale device having a nanowire or functionalized nanowires for detecting the presence or absence of an analyte suspected to be present in a sample, and method for using same.
Background of the Invention Nanowires are ideally suited for efficient transport of charge carriers and excitons, and thus are expected to be critical building blocks for nanoscale electronics and optoelectronics. Studies of electrical transport in carbon nanotubes have led to the creation of field effect transistors, single electron transistors, and rectifying junctions.
Summary of the Invention
The present invention provides a series of nanoscale devices and methods of use of the same.
In one aspect, the invention provides a nanoscale device. The device is defined by a sample exposure region and a nanowire, wherein at least a portion of the nanowire is addressable by a sample in the sample exposure region. In one embodiment, the device may further comprise a detector able to determine a property associated with the nanowire. In another embodiment, the device is a sample cassette comprising a sample exposure region and a nanowire. At least a portion of the nanowire is addressable by a sample in the sample exposure region, and the sample cassette is operatively connectable to a detector apparatus that is able to determine a property associated with the nanowire. In another embodiment, the device is a sensor comprising at least one nanowire and means for measuring a change in a property of the at least one nanowire.
In another embodiment, the device comprises functionalized nanowires comprising a core region of a bulk nanowire and an outer region of functional moieties.
Another aspect of the invention provides a method involving determining a property change of a nanowire when the nanowire is contacted with a sample suspected of containing an analyte.
Another method involves measuring a change in a property associated with a nanowire, when the nanowire is contacted with a sample having a volume of less than about 10 microliters. Another method involves determining the presence or quantity of an analyte in a sample suspected of containing an analyte. A change in a property of a nanowire resulting from contacting the nanowire and the sample is measured
Another method for detecting an analyte comprises contacting a nanowire with a sample and determining a property associated with the nanowire. A change in the property of the nanowire indicates the presence or quantity of the analyte in the sample.
Another method comprises contacting an electrical conductor with a sample and determining the presence or quantity of an analyte in the sample by measuring a change in a property of the conductor resultant from the contact. Less than ten molecules of the analyte contribute to the change in the property. Another aspect of the invention provides an integrated multifunctionary system comprising a nanowire sensor, a signal interpreter, signal feedback component and an intervention delivery component.
Another aspect of the invention provides a nanowire sensor device comprising a semiconductor nanowire and a binding partner having a specificity for a selected moiety. The nanowire has an exterior surface formed thereon to form a gate electrode. The nanowire also has a first end in electrical contact with a conductor to form a source electrode and a second end in contact with a conductor to form a drain electrode. Another aspect of the invention provides an analyte-gated field effect transistor having a predetermined current- voltage characteristic and adapted for use as a chemical or biological sensor. The field effect transistor comprises a substrate formed of a first insulating material, a source electrode, a drain electrode, and a semiconductor nanowire disposed between the source and drain electrodes, and an analyte-specific minding partner disposed on a surface of the nanowire. A binding event occurring between a target analyte and the binding partner causes a detectable change in a current- voltage characteristic of the field effect transistor. Another aspect of the invention provides an array of at least 100 analyte gate field effect transistors. Other advantages, novel features, and objects of the invention will become apparent from the following detailed description of non-limiting embodiments of the invention when considered in conjunction with the accompanying drawings, which are schematic and which are not intended to be drawn to scale. In the figures, each identieal or nearly identical component that is illustrated in various figures is represented by a single numeral. For purposes of clarity, not every component is labeled in every figure, nor is every component of each embodiment of the invention shown where illustration is not necessary to allow those of ordinary skill in the art to understand the invention.
Brief Description of the Drawings Fig. la illustrates, schematically, a nanoscale detector device.
Fig. lb illustrates, schematically, a nanoscale detector device with a parallel array of nanowires.
Fig. 2a illustrates, schematically, a nanoscale detector device in which a nanowire has been modified with a binding agent for detection of a complementary binding partner.
Fig. 2b illustrates, schematically, the nanoscale detector device of Fig. 2a, in which a complementary binding partner is fastened to the binding agent.
Fig. 3 a is a low resolution scanning electron micrograph of a single silicon nanowire connected to two metal electrodes. Fig. 3b is a high resolution scanning electron micrograph of a single silicon nanowire device connected to two metal electrodes. Fig. 4a shows schematically another embodiment of a nanoscale sensor having a backgate.
Figs. 4b shows conductance vs. time with various backgate voltages.
Fig. 4c shows conductance vs. backgate voltage. Fig. 5a shows conductance for a single silicon nanowire as a function of pH.
Fig. 5b shows conductance versus pH for a single silicon nanowire that has been modified to expose amine groups at the surface.
Fig. 6 shows conductance versus time for a silicon nanowire with a surface modified with oligonucleotide agents. Fig. 7 is an atomic force microscopy image of a typical single wall nanotube detector device.
Fig. 8a shows current-voltage (I-V) measurements for a single-walled carbon nanotube device in air.
Fig. 8b shows current- voltage (I-V) measurements for the single- walled carbon nanotube device of Fig. 8a in NaCl.
Fig. 8c shows current-voltage (I-V) measurements for a single-walled carbon nanotube device of Fig. 8b in CrClx.
Fig. 9a shows the conductance of nanosensors with hydroxyl surface groups when exposed to pH levels from 2 to 9. Fig. 9b shows the conductance of nanosensors modified with amine groups when exposed to pH levels from 2 to 9.
Fig. 9c show the relative conductance of the nanosensors with changes in pH levels.
Fig. 10a shows the conductance of a SiNW modified with BSA Biotin, as it is exposed first to a blank buffer solution, and then to a solution containing 250 nM Streptavidin.
Fig. 10b shows the conductance of a SiNW modified with BSA Biotin, as it is exposed first to a blank buffer solution, and then to a solution containing 25 pM Streptavidin. Fig. 10c shows the conductance of a bare SiNW as it is exposed first to a blank buffer solution, and then to a solution containing Streptavidin. Fig. lOd shows the conductance of a SiNW modified with BSA Biotin, as it is exposed to a buffer solution, and then to a solution containing d-biotin Sfreptavidin.
Fig. lOe shows the conductance of a Biotin modified nanosensor exposed to a blank buffer solution, then to a solution containing Sfreptavidin, and then again to a blank buffer solution.
Fig. 1 Of shows the conductance of a bare SiNW as it is alternately exposed to a buffer solution and a solution containing streptavidin.
Fig. 11a shows the conductance of a BSA-Biotin modified SiNW as it is exposed first to a blank buffer solution, then to a solution containing Antibiotin. Fig. l ib shows the conductance of a bare SiNW during contact with a buffer solution and then a solution containing Antibiotin.
Fig. 1 lc shows the conductance of a BSA-Biotin modified SiNW during exposure to a buffer, other IgG type antibodies, and then Antibiotin.
Fig. 12a shows the conductance of an amine modified SiNW when alternately exposed to a blank buffer solution and a solution containing ImM Cu(II).
Fig. 12b shows the conductance of the amine modified SiNW is exposed to concentrations of Cu(II) from 0.1 mM to ImM.
Fig. 12c shows the conductance verses Cu(II) concentration.
Fig. 12d shows conductance of an unmodified SiNW when exposed first to a blank buffer solution and then to ImM Cu(II).
Fig. 12e shows conductance of an amine-modified SiNW when exposed first to a blank buffer solution and then to ImM Cu(II)-EDTA.
Fig. 13a shows the conductance of a calmodulin-modified silicon nanowire exposed to a buffer solution and then to a solution containing calcium ions. Fig. 13b shows the conductance of a bare silicon nanowire exposed to a buffer solution and then to a solution containing calcium ions.
Fig. 14a shows a calculation of sensitivity for detecting up to 5 charges compared with doping concentration and nanowire diameter.
Fig. 14b shows a calculation of the threshold doping density compared to nanowire diameter for detecting a single charge.
Fig. 15 is a schematic view of an InP nanowire. Fig. 15b shows the change in luminescence of a nanowire of Fig. 15a over time as pH varies.
Fig. 16a depicts one embodiment of a nanowire sensor, specifically a chemical or ligand-gated Field Effects Transistor (FET). Fig. 16b show another view of the nanowire of Fig. 16a.
Fig. 16c illustrates the nanowire of Fig. 16a with moieties at the surface.
Fig. 16d illustrates the nanowire of Fig. 16c with a depletion region.
Detailed Description of the Invention The present invention provides a series of techniques and devices involving nanowires. One aspect of the invention provides functionalized nanowires. While many uses for nanowires have been developed, many more different and important uses are facilitated by the present invention where the nanowires are functionalized at their surface, or in close proximity to their surface. In one particular case, functionalization (e.g., with a reaction entity), either uniformly or non-uniformly, permits interaction of the functionalized nanowire with various entities, such as molecular entities, and the interaction induces a change in a property of the functionalized nanowire, which provides a mechanism for a nanoscale sensoring device. Another aspect of the invention is a sensor that comprises a nanowire, or a functionalized nanowire. Various aspects of the invention are described below in greater detail.
As used herein, a "nanowire" is an elongated nanoscale semiconductor which, at any point along its length, has at least one cross-sectional dimension and, in some embodiments, two orthogonal cross-sectional dimensions less than 500 nanometers, preferably less than 200 nanometers, more preferably less than 150 nanometers, still more preferably less than 100 nanometers, even more preferably less than 70, still more preferably less than 50 nanometers, even more preferably less than 20 nanometers, still more preferably less than 10 nanometers, and even less than 5 nanometers. In other embodiments, the cross-sectional dimension can be less than 2 nanometers or 1 nanometer. In one set of embodiments the nanowire has at least one cross-sectional dimension ranging from 0.5 nanometers to 200 nanometers. Where nanowires are described having a core and an outer region, the above dimensions relate to those of the core. The cross-section of the elongated semiconductor may have any arbitrary shape, including, but not limited to, circular, square, rectangular, elliptical and tubular. Regular and irregular shapes are included. A non-limiting list of examples of materials from which nanowires of the invention can be made appears below. Nanotubes are a class of nanowires that find use in the invention and, in one embodiment, devices of the invention include wires of scale commensurate with nanotubes. As used herein, a "nanotube" is a nanowire that has a hollowed-out core, and includes those nanotubes know to those of ordinary skill in the art. A "non-nanotube nanowire" is any nanowire that is not a nanotube. In one set of embodiments of the invention, a non-nanotube nanowire having an unmodified surface (not including an auxiliary reaction entity not inherent in the nanotube in the environment in which it is positioned) is used in any arrangement of the invention described herein in which a nanowire or nanotube can be used. A "wire" refers to any material having a conductivity at least that of a semiconductor or metal. For example, the term "electrically conductive" or a "conductor" or an "electrical conductor" when used with reference to a "conducting" wire or a nanowire refers to the ability of that wire to pass charge through itself.
Preferred electrically conductive materials have a resistivity lower than about 10"3, more preferably lower than about 10"4, and most preferably lower than about 10"6 or 10"7 ohm- meters.
The invention provides a nanowire or nanowires preferably forming part of a system constructed and arranged to determine an analyte in a sample to which the nanowire(s) is exposed. "Determine", in this context, means to determine the quantity and/or presence of the analyte in the sample. Presence of the analyte can be determined by determining a change in a characteristic in the nanowire, typically an electrical characteristic or an optical characteristic. E.g. an analyte causes a detectable change in electrical conductivity of the nanowire or optical properties. In one embodiment, the nanowire includes, inherently, the ability to determine the analyte. The nanowire may be functionalized, i.e. comprising surface functional moieties, to which the analyfes binds and induces a measurable property change to the nanowire. The binding events can be specific or non-specific. The functional moieties may include simple groups, selected from the groups including, but not limited to, -OH, -CHO, -COOH, -SO3H, -CN, -NH2, - SH, -COSH, COOR, halide; biomolecular entities including, but not limited to, amino acids, proteins, sugars, DNA, antibodies, antigens, and enzymes; grafted polymer chains with chain length less than the diameter of the nanowire core, selected from a group of polymers including, but not limited to, polyamide, polyester, polyimide, polyacrylic; a thin coating covering the surface of the nanowire core, including, but not limited to, the following groups of materials: metals, semiconductors, and insulators, which may be a metallic element, an oxide, an sulfide, a nifride, a selenide, a polymer and a polymer gel. In another embodiment, the invention provides a nanowire and a reaction entity with which the analyte interacts, positioned in relation to the nanowire such that the analyte can be determined by determining a change in a characteristic of the nanowire.
The term "reaction entity" refers to any entity that can interact with an analyte in such a manner to cause a detectable change in a property of a nanowire. The reaction entity may enhance the interaction between the nanowire and the analyte, or generate a new chemical species that has a higher affinity to the nanowire, or to enrich the analyte around the nanowire. The reaction entity can comprise a binding partner to which the analyte binds. The reaction entity, when a binding partner, can comprise a specific binding partner of the analyte. For example, the reaction entity may be a nucleic acid, an antibody, a sugar, a carbohydrate or a protein. Alternatively, the reaction entity may be a polymer, catalyst, or a quantum dot. A reaction entity that is a catalyst can catalyze a reaction involving the analyte, resulting in a product that causes a detectable change in the nanowire, e.g. via binding to an auxiliary binding partner of the product electrically coupled to the nanowire. Another exemplary reaction entity is a reactant that reacts with the analyte, producing a product that can cause a detectable change in the nanowire. The reaction entity can comprise a coating on the nanowire, e.g. a coating of a polymer that recognizes molecules in, e.g., a gaseous sample, causing a change in conductivity of the polymer which, in turn, causes a detectable change in the nanowire. The term "quantum dot" is known to those of ordinary skill in the art, and generally refers to semiconductor or metal nanoparticles that absorb light and quickly re- emit light in a different color depending on the size of the dot. For example, a 2 nanometer quantum dot emits green light, while a 5 nanometer quantum dot emits red light. Cadmium Selenide quantum dot nanocrystals are available from Quantum Dot Corporation of Hay ward, California.
The term "binding partner" refers to a molecule that can undergo binding with a particular analyte, or "binding partner" thereof, and includes specific, semi-specific, and non-specific binding partners as known to those of ordinary skill in the art. E.g., Protein A is usually regarded as a "non-specific" or semi-specific binder. The term "specifically binds", when referring to a binding partner (e.g., protein, nucleic acid, antibody, etc.), refers to a reaction that is determinative of the presence and/or identity of one or other member of the binding pair in a mixture of heterogeneous molecules (e.g., proteins and other biologies). Thus, for example, in the case of a receptor/ligand binding pair the ligand would specifically and/or preferentially select its receptor from a complex mixture of molecules, or vice versa. An enzyme would specifically bind to its substrate, a nucleic acid would specifically bind to its complement, an antibody would specifically bind to its antigen. Other examples include, nucleic acids that specifically bind
(hybridize) to their complement, antibodies specifically bind to their antigen, and the like.
The binding may be by one or more of a variety of mechanisms including, but not limited to ionic interactions, and/or covalent interactions, and/or hydrophobic interactions, and/or van der Waals interactions, etc.
The term "fluid" is defined as a substance that tends to flow and to conform to the outline of its container: Typically fluids are materials that are unable to withstand a static shear stress. When a shear stress is applied to a fluid it experiences a continuing and permanent distortion. Typical fluids include liquids and gasses, but may also include free flowing solid particles.
The term "sample" refers to any cell, tissue, or fluid from a biological source (a "biological sample"), or any other medium, biological or non-biological, that can be evaluated in accordance with the invention including, such as serum or water. A sample includes, but is not limited to, a biological sample drawn from an organism (e.g. a human, a non-human mammal, an invertebrate, a plant, a fungus, an algae, a bacteria, a virus, etc.), a sample drawn from food designed for human consumption, a sample including food designed for animal consumption such as livestock feed, milk, an organ donation sample, a sample of blood destined for a blood supply, a sample from a water supply, or the like. One example of a sample is a sample drawn from a human or animal to determine the presence or absence of a specific nucleic acid sequence.
A "sample suspected of containing" a particular component means a sample with respect to which the content of the component is unknown. For example, a fluid sample from a human suspected of having a disease, such as a neurodegenerative disease or a non-neurodegenerative disease, but not known to have the disease, defines a sample suspected of containing neurodegenerative disease. "Sample" in this context includes naturally-occurring samples, such as physiological samples from humans or other animals, samples from food, livestock feed, etc. Typical samples taken from humans or other animals include tissue biopsies, cells, whole blood, serum or other blood fractions, urine, ocular fluid, saliva, cerebro-spinal fluid, fluid or other samples from tonsils, lymph nodes, needle biopsies, etc.
The term "electrically coupled" when used with reference to a nanowire and an analyte, or other moiety such as a reaction entity, refers to an association between any of the analyte, other moiety, and the nanowire such that electrons can move from one to the other, or in which a change in an electrical characteristic of one can be determined by the other. This can include electron flow between these entities, or a change in a state of charge, oxidation, or the like that can be determined by the nanowire. As examples, electrical coupling can include direct covalent linkage between the analyte or other moiety and the nanowire, indirect covalent coupling (e.g. via a linker), direct or indirect ionic bonding between the analyte (or other moiety) and the nanowire, or other bonding (e.g. hydrophobic bonding). In some cases, no actual bonding may be required and the analyte or other moiety may simply be contacted with the nanowire surface. There also need not necessarily be any contact between the nanowire and the analyte or other moiety where the nanowire is sufficiently close to the analyte to permit electron tunneling between the analyte and the nanowire.
The terms "polypeptide", "peptide" and "protein" are used interchangeably herein to refer to a polymer of amino acid residues. The terms apply to amino acid polymers in which one or more amino acid residue is an artificial chemical analogue of a corresponding naturally occurring amino acid, as well as to naturally occurring amino acid polymers. The term also includes variants on the traditional peptide linkage joining the amino acids making up the polypeptide.
The terms "nucleic acid" or "oligonucleotide" or grammatical equivalents herein refer to at least two nucleotides covalently linked together. A nucleic acid of the present invention is preferably single-stranded or double stranded and will generally contain phosphodiester bonds, although in some cases, as outlined below, nucleic acid analogs 02/048701
-11- are included that may have alternate backbones, comprising, for example, phosphoramide (Beaucage et al. (1993) Tetrahedron 49(10):1925) and references therein; Letsinger (1970) J Org. Chem. 35:3800; Sprinzl et al. (1977) Ewr. J Biochem. 81: 579; Letsinger et al. (1986) Nucl. Acids Res. 14: 3487; Sawai et al. (1984) Chem. Jett. 805, Letsinger et al. (1988) J Am. Chem. Soc. 110: 4470; and Pauwels et al. (1986) Chemica Scripta 26: 1419), phosphorothioate (Mag et al. (1991) Nucleic Acids Res. 19: 1437; and U.S. Patent No. 5,644,048), phosphorodithioate (Briu et al. (1989) J Am. Chem. Soc. I ll :2321, O-methylphophoroamidite linkages (see Eckstein, Oligonucleotides and Analogues: A Practical Approach, Oxford University Press), and peptide nucleic acid backbones and linkages (see Egholm (1992) J Am. Chem. Soc. 114:1895; Meier et al. (1992) Chem. Int. Ed. Engl. 31: 1008; Nielsen (1993) N ture, 365: 566; Carlsson et al. (1996) Nature 380: 207). Other analog nucleic acids include those with positive backbones (Denpcy et al. (1995) Proc. Natl. Acad. Sci. USA 92: 6097; non-ionic backbones (U.S. Patent Νos. 5,386,023, 5,637,684, 5,602,240, 5,216,141 and 4,469,863; Angew. (1991) Chem. Intl. Ed. English 30: 423; Letsinger et al. (1988) J Am. Chem. Soc. 110:4470; Letsinger et al. (1994) Nucleoside & Nucleotide 13:1597; Chapters 2 and 3, ASC Symposium Series 580, "Carbohydrate Modifications in Antisense Research", Ed. Y.S. Sanghui and P. Dan Cook; Mesmaeker et al. (1994), Bioorganic & Medicinal Chem. Lett. 4: 395; Jeffs et al. (1994) J. Biomolecular NMR 34:17; Tetrahedron Lett. 37:743 (1996)) and non-ribose backbones, including those described in U.S. Patent Νos. 5,235,033 and 5,034,506, and Chapters 6 and 7, ASC Symposium Series 580, Carbohydrate Modifications in Antisense Research, Ed. Y.S. Sanghui and P. Dan Cook. Nucleic acids containing one or more carbocyclic sugars are also included within the definition of nucleic acids (see Jenkins et al. (1995), Chem. Soc. Rev. pp. 169-176). Several nucleic acid analogs are described in Rawls, C & E News June 2, 1997 page 35. These modifications of the ribose-phosphate backbone may be done to facilitate the addition of additional moieties such as labels, or to increase the stability and half-life of such molecules in physiological environments.
As used herein, an "antibody" refers to a protein or glycoprotein consisting of one or more polypeptides substantially encoded by immunoglobulin genes or fragments of immunoglobulin genes. The recognized immunoglobulin genes include the kappa, lambda, alpha, gamma, delta, epsilon and mu constant region genes, as well as myriad immunoglobulin variable region genes. Light chains are classified as either kappa or lambda. Heavy chains are classified as gamma, mu, alpha, delta, or epsilon, which in turn define the immunoglobulin classes, IgG, IgM, IgA, IgD and IgE, respectively. A typical immunoglobulin (antibody) structural unit is known to comprise a tetramer. Each tetramer is composed of two identical pairs of polypeptide chains, each pair having one "light" (about 25 kD) and one "heavy" chain (about 50-70 kD). The N-terminus of each chain defines a variable region of about 100 to 110 or more amino acids primarily responsible for antigen recognition. The terms variable light chain (VL) and variable heavy chain (VH) refer to these light and heavy chains respectively. Antibodies exist as intact immunoglobulins or as a number of well characterized fragments produced by digestion with various peptidases. Thus, for example, pepsin digests an antibody below (i.e. toward the Fc domain) the disulfide linkages in the hinge region to produce F(ab)'2, a dimer of Fab which itself is a light chain joined to VH-CH1 by a disulfide bond. The F(ab)'2 may be reduced under mild conditions to break the disulfide linlcage in the hinge region thereby converting the (Fab')2 dimer into an Fab' monomer. The Fab' monomer is essentially a Fab with part of the hinge region (see, Paul (1993) Fundamental Immunology, Raven Press, N.Y. for a more detailed description of other antibody fragments). While various antibody fragments are defined in terms of the digestion of an intact antibody, one of skill will appreciate that such fragments may be synthesized de novo either chemically, by utilizing recombinant DNA methodology, or by "phage display" methods (see, e.g., Vaughan et al. (1996) Nature Biotechnology, 14(3): 309-314, and PCT/US96/10287). Preferred antibodies include single chain antibodies, e.g., single chain Fv (scFv) antibodies in which a variable heavy and a variable light chain are joined together (directly or through a peptide linker) to form a continuous polypeptide.
One aspect of the invention involves a sensing element, which can be an electronic sensing element, and a nanowire able to detect the presence, or absence, of an analyte in a sample (e.g. a fluid sample) containing, or suspected of containing, the analyte. Nanoscale sensors of the invention may be used, for example, in chemical applications to detect pH or the presence of metal ions; in biological applications to detect a protein, nucleic acid (e.g. DNA, RNA, etc.), a sugar or carbohydrate, and /or metal ions; and in environmental applications to detect pH, metal ions, or other analytes of interest.
Another aspect of the present invention provides an article comprising a nanowire and a detector constructed and arranged to determine a change in an electrical property of the nanowire. At least a portion of the nanowire is addressable by a sample containing, or suspected of containing, an analyte. The phrase "addressable by a fluid" is defined as the ability of the fluid to be positioned relative to the nanowire so that an analyte suspected of being in the fluid is able to interact with the nanowire. The fluid may be proximate to or in contact with the nanowire. In all of the illustrative embodiments described herein, any nanowire can be used, including carbon nanotubes, nanorods, nanowires, organic and inorganic conductive and semiconducting polymers, and the like unless otherwise specified. Other conductive or semiconducting elements that may not be molecular wires, but are of various small nanoscopic-scale dimension, also can be used in some instances, e.g. inorganic structures such as main group and metal atom-based wire-like silicon, transition metal-containing wires, gallium arsenide, gallium nitride, indium phosphide, germanium, cadmium selenide structures. A wide variety of these and other nanowires can be grown on and/or applied to surfaces in patterns useful for electronic devices in a manner similar to techniques described herein involving nanowires, without undue experimentation. The nanowires should be able to be formed of at least one micron, preferably at least three microns, more preferably at least five microns, and more preferably still at least ten or twenty microns in length, and preferably are less than about 100 nanometers, more preferably less than about 75 nanometers, and more preferably less than about 50 nanometers, and more preferably still less than about 25 nanometers in thickness (height and width). The wires should have an aspect ratio (length to thickness) of at least about 2:1, preferably greater than about 10:1, and more preferably greater than about 1000:1. A preferred nanowire for use in devices of the invention can be either a nanotube or a nanowire. Nanotubes (e.g. carbon nanotubes) are hollow. Nanowires (e.g. silicon nanowires) are solid. Whether nanotubes or nanowires are selected, the criteria for selection of nanowires and other conductors or semiconductors for use in the invention are based, in some instances, mainly upon whether the nanowire itself is able to interact with an analyte, or whether the appropriate reaction entity, e.g. binding partner, can be easily attached to the surface of the nanowire, or the appropriate reaction entity, e.g. binding partner, is near the surface of the nanowire. Selection of suitable conductors or semiconductors, including nanowires, will be apparent and readily reproducible by those of ordinary skill in the art with the benefit of the present disclosure.
Nanotubes that may be used in the present invention include single-walled nanotubes (SWNTs) that exhibit unique electronic, and chemical properties that are particularly suitable for molecular electronics. Structurally, SWNTs are formed of a single graphene sheet rolled into a seamless tube with a diameter on the order of about 0.5 nm to about 5 nm and a length that can exceed about 10 microns. Depending on diameter and helicity, SWNTs can behave as one-dimensional metals or semiconductor and are currently available as a mixture of metallic and semiconducting nanotubes. Methods of manufacture of nanotubes, including SWNTs, and characterization are known. Methods of selective functionalization on the ends and/or sides of nanotubes also are known, and the present invention makes use of these capabilities for molecular electronics. The basic structural/electronic properties of nanotubes can be used to create connections or input/output signals, and nanotubes have a size consistent with molecular scale architecture.
Preferred nanowires of the present invention are individual nanowires. As used herein, "individual nanowires" means a nanowire free of contact with another nanowire (but not excluding contact of a type that may be desired between individual nanowires in a crossbar array). For example, typical individual nanowire can have a thickness as small as about 0.5 nm. This is in contrast to nanowires produced primarily by laser vaporization techniques that produce high-quality materials, but materials formed as ropes having diameters of about 2 to about 50 nanometers or more and containing many individual nanowires (see, for example, Thess, et al., "Crystalline Ropes of Metallic Carbon Nanotubes" Science 273, 483-486 (1996), incorporated herein by reference). While nanowire ropes can be used in the invention, individual nanowires are preferred. The invention may utilize metal-catalyzed CVD to synthesize high quality individual nanowires such as nanotubes for molecular electronics. CVD synthetic procedures needed to prepare individual wires directly on surfaces and in bulk form are known, and can readily be carried out by those of ordinary skill in the art. See, for example, Kong, et al, "Synthesis of Individual Single- Walled Carbon Nanotubes on Patterned Silicon Wafers", Nature 395, 878-881 (1998); Kong, et al, "Chemical Vapor Deposition of Methane for Single- Walled Carbon Nanotubes" Chem. Phys. Lett. 292, 567-574 (1998), both incorporated herein by reference. Nanowires may also be grown through laser catalytic growth. See, for example, Morales et al. "A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires" Science 279, 208- 211 (1998), incorporated herein by reference.
Alternatively, the nanowire may comprise a semiconductor that is doped with an appropriate dopant to create an n-type or p-type semiconductor as desired. For example, silicon may be doped with boron, aluminum, phosphorous, or arsenic. Laser catalytic growth may be used to introduce controllably the dopants during the vapor phase growth of silicon nanowires.
Controlled doping of nanowires can be carried out to form, e.g., n-type or p-type semiconductors. In various embodiments, this invention involves controlled doping of semiconductors selected from among indium phosphide, gallium arsenide, gallium nifride, cadmium selenide, and zinc selenide. Dopants including, but not limited to, zinc, cadmium, or magnesium can be used to form p-type semiconductors in this set of embodiments, and dopants including, but not limited to, tellurium, sulfur, selenium, or germanium can be used as dopants to form n-type semiconductors from these materials. These materials define direct band gap semiconductor materials and these and doped silicon are well known to those of ordinary skill in the art. The present invention contemplates use of any doped silicon or direct band gap semiconductor materials for a variety of uses.
As examples of nanowire growth, placement, and doping, SiNWs (elongated nanoscale semiconductors) may be synthesized using laser assisted catalytic growth (LCG). As shown in Figs. 2 and 3, laser vaporization of a composite target that is composed of a desired material (e.g. InP) and a catalytic material (e.g. Au) creates a hot, dense vapor which quickly condenses into liquid nanoclusters through collision with the buffer gas. Growth begins when the liquid nanoclusters become supersaturated with the desired phase and continues as long as the reactant is available. Growth terminates when the nanowires pass out of the hot reaction zone or when the temperature is turned down. Au is generally used as catalyst for growing a wide range of elongated nanoscale semiconductors. However, The catalyst is not limited to Au only. A wide rage of materials such as (Ag, Cu, Zn, Cd, Fe, Ni, Co...) can be used as the catalyst. Generally, any metal that can form an alloy with the desired semiconductor material, but doesn't form more stable compound than with the elements of the desired semiconductor can be used as the catalyst. The buffer gas can be Ar, N2, and others inert gases. Sometimes, a mixture of H2 and buffer gas is used to avoid undesired oxidation by residue oxygen. Reactive gas can also be introduced when desired (e.g. ammonia for GaN).The key point of this process is laser ablation generates liquid nanoclusters that subsequently define the size and direct the growth direction of the crystalline nanowires. The diameters of the resulting nanowires are determined by the size of the catalyst cluster, which in turn can be varied by controlling the growth conditions (e.g. background pressure, temperature, flow rate...). For example, lower pressure generally produces nanowires with smaller diameters. Further diameter control can be done by using uniform diameter catalytic clusters. With same basic principle as LCG, if uniform diameter nanoclusters (less than
10-20% variation depending on how uniform the nanoclusters are) are used as the catalytic cluster, nanowires with uniform size (diameter) distribution can be produced, where the diameter of the nanowires is determined by the size of the catalytic clusters, as illustrated in Fig. 4. By controlling the growth time, nanowires with different lengths can be grown.
With LCG, nanowires can be flexibly doped by introducing one or more dopants into the composite target (e.g., Ge for n-type doping of InP). The doping concentration can be controlled by controlling the relative amount of doping element, typically 0-20%, introduced in the composite target. Laser ablation may be used as the way to generate the catalytic clusters and vapor phase reactant for growth of nanowires and other related elongated nanoscale structures, but fabrication is not limited to laser ablation. Many ways can be used to generate vapor phase and catalytic clusters for nanowire growth (e.g. thermal evaporation).
Another technique that may be used to grow nanowires is catalytic chemical vapor deposition (C-CVD). C-CVD utilizes the same basic principles as LCG, except that in the C-CVD method, the reactant molecules (e.g., silane and the dopant) are from vapor phase molecules (as opposed to vapor source from laser vaporization. In C-CVD, nanowires can be doped by introducing the doping element into the vapor phase reactant (e.g. diborane and phosphane for p-type and n-type doped nanowire). The doping concentration can be controlled by controlling the relative amount of the doping element introduced in the composite target. It is not necessary to obtain elongated nanoscale semiconductors with the same doping ratio as that in the gas reactant. However, by controlling the growth conditions (e.g. temperature, pressure....), nanowires with same doping concentration can be reproduced. And the doping concentration can be varied over a large range by simply varying the ratio of gas reactant (e.g. lppm-10%). There are several other techniques that may be used to grow elongated nanoscale semiconductors such as nanowires. For example, nanowires of any of a variety of materials can be grown directly from vapor phase through a vapor-solid process. Also, nanowires can also be produced by deposition on the edge of surface steps, or other types of patterned surfaces, as shown in Fig. 5. Further, nanowires can be grown by vapor deposition in/on any general elongated template, for example, as shown in Fig. 6. The porous membrane can be porous silicon, anodic alumina or diblock copolymer and any other similar structure. The natural fiber can be DNA molecules, protein molecules carbon nanotubes, any other elongated structures. For all the above described techniques, the source materials can be came from a solution phase rather than a vapor phase. While in solution phase, the template can also be column micelles formed by surfactant molecules in addition to the templates described above.
Using one or more of the above techniques, elongated nanoscale semiconductors, including semiconductor nanowires and doped semiconductor nanowires, can be grown. Such bulk-doped semiconductors may include various combinations of materials, including semiconductors and dopants. The following are non-comprehensive lists of such materials. Other materials may be used. Such materials include, but are not limited to: Elemental semiconductors:
Si, Ge, Sn, Se, Te, B, Diamond, P Solid solution of Elemental semiconductors:
B-C, B-P(BP6), B-Si, Si-C, Si-Ge, Si-Sn, Ge-Sn IV-IV group semiconductors:
SiC III- V semiconductors:
BN/BP/BAs, AlN/AlP/AlAs/AlSb, GaN/GaP/GaAs/GaSb, InN/InP/InAs/InSb, Alloys of III- V Group: any combination of two or more of the above compound (e.g.: AlGaN, GaPAs, InPAs, GalnN, AlGalnN, GalnAsP...) II- VI semiconductors:
ZnO/ZnS/ZnSe/ZnTe, CdS/CdSe/CdTe, HgS/HgSe/HgTe, BeS/BeSe/BeTe/MgS/MgSe
Alloys of II-VI Group: any combination of two or more of the above compound (e.g.:
(ZnCd)Se, Zn(SSe)...)
Alloy of II- VI and III- V semiconductors: combination of any one II-VI and one III-V compounds, e.g. (GaAs)x(ZnS)ι-x IV-VI semiconductors:
GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe I- VII semiconductors:
CuF, CuCl, CuBr, Cul, AgF, AgCl, AgBr, Agl Other semiconductor compounds: II-IV-V2: BeSiN2, CaCN2, ZnGeP2, CdSnAs2, ZnSnSb2 ...
I-IV2-V3: CuGeP3, CuSi2P3..
I-III- VI2: Cu, Ag)(Al, Ga, In, TI, Fe)(S, Se, Te)2
IV3-V4: Si3N4, Ge3N4 ...
III2-VI3: A12O3, (Al, Ga, In)2(S, Se, Te)3... III2-IV-VI: A12CO ...
For Group IV semiconductor materials, a p-type dopant may be selected from Group III, and an n-type dopant may be selected from Group V. For silicon semiconductor materials, a p-type dopant may be selected from the group consisting of B, Al and In, and an n-type dopant may be selected from the group consisting of P, As and Sb. For Group III-V semiconductor materials, a p-type dopant may be selected from Group II, including Mg, Zn, Cd and Hg, or Group IV, including C and Si. An n-type dopant may be selected from the group consisting of Si, Ge, Sn, S, Se and Te. It will be understood that the invention is not limited to these dopants.
Nanowires may be either grown in place or deposited after growth. Assembly, or controlled placement of nanowires on surfaces after growth can be carried out by aligning nanowires using an electrical field. An electrical field is generated between electrodes, nanowires are positioned between the electrodes (optionally flowed into a region between the electrodes in a suspending fluid), and will align in the electrical field and thereby can be made to span the distance between and contact each of the electrodes. In another arrangement individual contact points are arranged in opposing relation to each other, the individual contact points being tapered to form a point directed towards each other. An electric field generated between such points will attract a single nanowire spanning the distance between, and contacting each of, the electrodes. In this way individual nanowires can readily be assembled between individual pairs of electrical contacts. Crossed-wire arrangements, including multiple crossings (multiple parallel wires in a first direction crossed by multiple parallel wires in a perpendicular or approximately perpendicular second direction) can readily be formed by first positioning contact points (electrodes) at locations where opposite ends of the crossed wires desirably will lie. Electrodes, or contact points, can be fabricated via typical microfabrication techniques. These assembly techniques can be substituted by, or complemented with, a positioning arrangement involving positioning a fluid flow directing apparatus to direct fluid containing suspended nanowires toward and in the direction of alignment with locations at which nanowires are desirably positioned.
Another arrangement involves forming surfaces including regions that selectively attract nanowires surrounded by regions that do not selectively attract them. For example, -NH2 can be presented in a particular pattern at a surface, and that pattern will attract nanowires or nanotubes having surface functionality attractive to amines. Surfaces can be patterned using known techniques such as electron-beam patterning, "soft-lithography" such as that described in International Patent Publication No. WO 96/29629, published July 26, 1996, or U.S. Patent No. 5, 512,131, issued April 30, 1996, each of which is incorporated herein by reference. A technique is also l nown to direct the assembly of a pre-formed nanowire onto a chemically patterned self-assembled monolayer. In one example of patterning the SAM for directed assembly of nanoscale circuitry atomic force microscopy (AFM) is used to write, at high resolution, a pattern in SAM at which the SAM is removed. The pattern can be for example linear for parallel arrays, or a crossed array of lines linear in embodiments for making nanoscopic crossed arrays. In another technique, microcontact printing can be used to apply patterned SAM to the substrate. Next, open areas in the patterned surface (the S AM-free linear region between linear SAM) are filled with an amino-terminated SAM that interacts in a highly specific manner with a nanowire such as a nanotube. The result is a patterned SAM, on a substrate, including linear SAM portions separated by a line of amino-terminated SAM material. Of course, any desired pattern can be formed where regions of the amino-terminated SAM material corresponds to regions at which wire deposition is desired. The patterned surface then is dipped into a suspension of wires, e.g. nanotubes, and rinsed to create an array in which wires are located at regions of the SAM. Where nanotubes are used, an organic solvent such as dimethyl formamide can be used to create the suspension of nanotubes. Suspension and deposition of other nanowires is achievable with easily selected solvents.
Any of a variety of substrates and SAM-forming materials can be used along with microcontact printing techniques, such as those described in International Patent Publication WO 96/29629 of Whitesides, et al, published June 26, 1996 and incorporated herein by reference. Patterned SAM surfaces can be used to direct a variety of nanowires or nanoscale electronic elements. SAM-forming material can be selected, with suitable exposed chemical functionality, to direct assembly of a variety of electronic elements. Electronic elements, including nanotubes, can be chemically tailored to be attracted specifically to specific, predetermined areas of a patterned SAM surface. Suitable functional groups include, but are not limited to SH, NH3, and the like. Nanotubes are particularly suitable for chemical functionalization on their exterior surfaces, as is well known.
Chemically patterned surfaces other than SAM-derivatized surfaces can be used, and many techniques for chemically patterning surfaces are known. Suitable exemplary chemistries and techniques for chemically patterning surfaces are described in, among other places, International Patent Publication No. WO 97/34025 of Hidber, et al, entitled, "Microcontact Printing of Catalytic Colloids", and U.S. Patent Nos. 3,873,359; 3,873,360; and 3,900,614, each by Lando, all of these documents incorporated herein by reference. Another example of a chemically patterned surface is a micro-phase separated block copolymer structure. These structures provide a stack of dense lamellar phases. A cut through these phases reveals a series of "lanes" wherein each lane represents a single layer. The block copolymer is typically an alternating block and can provide varying domains by which to dictate growth and assembly of a nanowire. Additional techniques are described in International Patent Publication No. WO 01/03208 published January 11, 2001 by Lieber, et al., incorporated herein by reference. Chemical changes associated with the nanowires used in the invention can modulate the properties of the wires and create electronic devices of a variety of types. Presence of the analyte can change the electrical properties of the nanowire through electrocoupling with a binding agent of the nanowire. If desired, the nanowires can be coated with a specific reaction entity, binding partner or specific binding partner, chosen for its chemical or biological specificity to a particular analyte.
The reaction entity is positioned relative to the nanowire to cause a detectable change in the nanowire. The reaction entity may be positioned within 100 nanometers of the nanowire, preferably with in 50 nanometers of the nanowire, and more preferably with in 10 nanometers of the nanowire, and the proximity can be determined by those of ordinary skill in the art. In one embodiment, the reaction entity is positioned less than 5 nanometers from the nanoscopic wire. In alternative embodiments, the reaction entity is positioned with 4 nm, 3 nm, 2 nm, and 1 nm of the nanowire. In a preferred embodiment, the reaction entity is attached to the nanowire through a linker.
As used herein, " attached to," in the context of a species relative to another species or to a surface of an article, means that the species is chemically or biochemically linked via covalent attachment, attachment via specific biological binding (e.g., biotin/streptavidin), coordinative bonding such as chelate/metal binding, or the like. For example, "attached" in this context includes multiple chemical linkages, multiple chemical/biological linkages, etc., including, but not limited to, a binding species such as a peptide synthesized on a polystyrene bead, a binding species specifically biologically coupled to an antibody which is bound to a protein such as protein A, which is covalently attached to a bead, a binding species that forms a part (via genetic engineering) of a molecule such as GST or, which in turn is specifically biologically bound to a binding partner covalently fastened to a surface (e.g., glutathione in the case of GST), etc. As another example, a moiety covalently linked to a thiol is adapted to be fastened to a gold surface since thiols bind gold covalently. "Covalently attached" means attached via one or more covalent bonds. E.g. a species that is covalently coupled, via EDC/NHS chemistry, to a carboxylate-presenting alkyl thiol which is in turn attached to a gold surface, is covalently attached to that surface.
Another aspect of the invention involves an article comprising a sample exposure region and a nanowire able to detect the presence of absence of an analyte. The sample exposure region may be any region in close proximity to the nanowire wherein a sample in the sample exposure region addresses at least a portion of the nanowire. Examples of sample exposure regions include, but are not limited to, a well, a channel, a microchannel, and a gel. In preferred embodiments, the sample exposure region holds a sample proximate the nanowire, or may direct a sample toward the nanowire for determination of an analyte in the sample. The nanowire may be positioned adjacent to or within the sample exposure region. Alternatively, the nanowire may be a probe that is inserted into a fluid or fluid flow path. The nanowire probe may also comprise a micro- needle and the sample exposure region may be addressable by a biological sample. In this arrangement, a device that is constructed and arranged for insertion of a micro- needle probe into a biological sample will include a region surrounding the micro-needle that defines the sample exposure region, and a sample in the sample exposure region is addressable by the nanowire, and vice- versa. Fluid flow channels can be created at a size and scale advantageous for use in the invention (microchannels) using a variety of techniques such as those described in International Patent Publication No. WO 97/33737, published September 18, 1997, and incorporated herein by reference.
In another aspect of the invention, an article may comprise a plurality of nanowires able to detect the presence or absence of a plurality of one or more analytes. The individual nanowires may be differentially doped as described above, thereby varying the sensitivity of each nanowire to the analyte. Alternatively, individual nanowires may be selected based on their ability to interact with specific analytes, thereby allowing the detection of a variety of analytes. The plurality of nanowires may be randomly oriented or parallel to one another. Alternatively, the plurality of nanowires may be oriented in an array on a substrate.
Fig. la shows one example of an article of the present invention. In Fig. la, nanoscale detector device 10 is comprised of a single nanowire 38 positioned above upper surface 18 of substrate 16. Chip carrier 12 has an upper surface 14 for supporting substrate 16 and electrical connections 22. Chip carrier 12, may be made of any insulating material that allows connection of electrical connections 22 to electrodes 36. In a preferred embodiment, the chip carrier is an epoxy. Upper surface 14 of the chip carrier, may be of any shape including, for example, planar, convex, and concave. In a preferred embodiment, upper surface 14 of the chip carrier is planar.
As shown in Fig. la, lower surface of 20 of substrate 16 is positioned adjacent to upper surface 14 of the chip carrier and supports electrical connection 22. Substrate 16 may typically be made of a polymer, silicon, quartz, or glass, for example. In a preferred embodiment, the substrate 16 is made of silicon coated with 600 nm of silicon oxide. Upper surface 18 and lower surface 20 of substrate 16 may be of any shape, such as planar, convex, and concave. In a preferred embodiment, lower surface 20 of substrate 16 contours to upper surface 14 of chip carrier 12. Similarly, mold 24 has an upper surface 26 and a lower surface 28, either of which may be of any shape. In a preferred embodiment, lower surface 26 of mold 24 contours to upper surface 18 of substrate 16. Mold 24 has a sample exposure region 30, shown here as a microchannel, having a fluid inlet 32 and fluid outlet 34, shown in Fig. la on the upper surface 26 of mold 24. Nanowire 38 is positioned such that at least a portion of the nanowire is positioned within sample exposure region 30. Electrodes 36 connect nanowire 38 to electrical connection 22. Electrical connections 22 are, optionally, connected to a detector (not shown) that measures a change in an electrical, or other property of the nanowire. Figs. 3a and 3b are low and high resolution scanning electron micrographs, respectively, of one embodiment of the present invention. A single silicon nanowire 38 is connected to two metal electrodes 36. Fig. 7 shows an atomic force microscopy image of a typical SWNT positioned with respect to two electrodes. As seen in Fig. 7, the distance between electrodes 36 is about 500 nm. In certain preferred embodiments, electrode distances will range from 50 nm to about 20000 nm 1, more preferably from about 100 nm to about 10000 nm, and most preferably from about 500 nm to about 5000 nm. Where a detector is present, any detector capable of determining a property associated with the nanowire can be used. The property can be electronic, optical, or the like. An electronic property of the nanowire can be, for example, its conductivity, resistivity, etc. An optical property associated with the nanowire can include its emission intensity, or emission wavelength where the nanowire is an emissive nanowire where emission occurs at a p-n junction. For example, the detector can be constructed for measuring a change in an electronic or magnetic property (e.g. voltage, current, conductivity, resistance, impedance, inductance, charge, etc.) can be used. The detector typically includes a power source and a voltmeter or amp meter. In one embodiment, a conductance less than 1 nS can be detected. In a preferred embodiment, a conductance in the range of thousandths of a nS can be detected. The concentration of a species, or analyte, may be detected from less than micromolar to molar concentrations and above. By using nanowires with known detectors, sensitivity can be extended to a single molecule. In one embodiment, an article of the invention is capable of delivering a stimulus to the nanowire and the detector is constructed and arranged to determine a signal resulting from the stimulus. For example, a nanowire including a p-n junction can be delivered a stimulus (electronic current), where the detector is constructed and arranged to determine a signal (electromagnetic radiation) resulting from the stimulus. In such an arrangement, interaction of an analyte with the nanowire, or with a reaction entity positioned proximate the nanowire, can affect the signal in a detectable manner. In another example, where the reaction entity is a quantum dot, the quantum dot may be constructed to receive electromagnetic radiation of one wavelength and emit electromagnetic radiation of a different wavelength. Where the stimulus is electromagnetic radiation, it can be affected by interaction with an analyte, and the detector can detect a change in a signal resulting therefrom. Examples of stimuli include a constant current/voltage, an alternating voltage, and electromagnetic radiation such as light.
In one example, a sample, such as a fluid suspected of containing an analyte that is to be detected and/or quantified, e.g. a specific chemical contacts nanoscopic wire 38 having a corresponding reaction entity at or near nanoscopic wire 38. An analyte present in the fluid binds to the corresponding reaction entity and causes a change in electrical properties of the nanowire that is detected, e.g. using conventional electronics. If the analyte is not present in the fluid, the electrical properties of the nanowire will remain unchanged, and the detector will measure a zero change. Presence or absence of a specific chemical can be determined by monitoring changes, or lack thereof, in the electrical properties of the nanowire. The term "determining" refers to a quantitative or qualitative analysis of a species via, piezoelectric measurement, electrochemical measurement, electromagnetic measurement, photodetection, mechanical measurement, acoustic measurement, gravimetric measurement and the like. "Determining" also means detecting or quantifying interaction between species, e.g. detection of binding between two species. Particularly preferred flow channels 30 for use in this invention are
"microchannels". The term microchannel is used herein for a channel having dimensions that provide low Reynolds number operation, i.e., for which fluid dynamics are dominated by viscous forces rather than inertial forces. Reynolds number, sometimes referred to the ratio of inertial forces to viscous forces is given as: Re = pd2/r\τ + pud/r\
where u is the velocity vector, p is the fluid density, η is the viscosity of the fluid, d is the characteristic dimension of the channel, and τ is the time scale over which the velocity is changing (where u/τ = δu/dt). The term "characteristic dimension" is used herein for the dimension that determines Reynolds number, as is known in the art. For a cylindrical channel it is the diameter. For a rectangular channel, it depends primarily on the smaller of the width and depth. For a V-shaped channel it depends on the width of the top of the "V, and so forth. Calculation of Re for channels of various morphologies can be found in standard texts on fluid mechanics (e.g. Granger (1995) Fluid Mechanics, Dover, N.Y.; Meyer (1982) Introduction to Mathematical Fluid Dynamics, Dover, N.Y.). Fluid flow behavior in the steady state (τ —> infinity) is characterized by the
Reynolds number, Re = pu-J/η . Because of the small sizes and slow velocities, microfabricated fluid systems are often in the low Reynolds number regime (Re less than about 1). In this regime, inertial effects, that cause turbulence and secondary flows, and therefore mixing within the flow, are negligible and viscous effects dominate the dynamics. Under these conditions, flow through the channel is generally laminar. In particularly preferred embodiments, the channel with a typical analyte-containing fluid provides a Reynolds number less than about 0.001, more preferably less than about 0.0001.
Since the Reynolds number depends not only on channel dimension, but on fluid density, fluid viscosity, fluid velocity and the timescale on which the velocity is changing, the absolute upper limit to the channel diameter is not sharply defined. In fact, with well designed channel geometries, turbulence can be avoided for R < 100 and possibly for R < 1000, so that high throughput systems with relatively large channel sizes are possible. The preferred channel characteristic dimension range is less than about 1 millimeter, preferably less than about 0.5 mm, and more preferably less than about 200 microns.
In one embodiment, the sample exposure region, such as a fluid flow channel 30 may be formed by using a polydimethyl siloxane (PDMS) mold. Channels can be created and applied to a surface, and a mold can be removed. In certain embodiments, the channels are easily made by fabricating a master by using photolithography and casting PDMS on the master, as described in the above-referenced patent applications and international publications. Larger-scale assembly is possible as well.
Fig. lb shows an alternative embodiment of the present invention wherein the nanoscale detector device 10 of Fig. la further includes multiple nanowires 38a-h (not shown). In Fig. lb, wire interconnects 40a-h connect corresponding nanowires 38a-h to electrical connections 22a-h, respectively (not shown). In a preferred embodiment, each nanowire 38a-h has a unique reaction entity selected to detect a different analytes in the fluid. In this way, the presence or absence of several analytes may be determined using one sample while performing one test.
Fig. 2a schematically shows a portion of a nanoscale detector device in which the nanowire 38 has been modified with a reactive entity that is a binding partner 42 for detecting analyte 44. Fig. 2b schematically shows a portion of the nanoscale detector device of Fig. 2a, in which the analyte 44 is attached to the specific binding partner 42. Selectively functionalizing the surface of nanowires can be done, for example, by functionalizing the nanowire with a siloxane derivative. For example, a nanowire may be modified after construction of the nanoscale detector device by immersing the device in a solution containing the modifying chemicals to be coated. Alternatively, a micro- fluidic channel may be used to deliver the chemicals to the nanowires. For example, amine groups may be attached by first making the nanoscale detector device hydrophilic by oxygen plasma, or an acid and/or oxidizing agent and the immersing the nanoscale detector device in a solution containing amino silane. By way of example, DNA probes may be attached by first attaching amine groups as described above, and immersing the modified nanoscale detector device in a solution containing bifunctional crosslinkers, if necessary, and immersing the modified nanoscale detector device in a solution containing the DNA probe. The process may be accelerated and promoted by applying a bias voltage to the nanowire, the bias voltage can be either positive or negative depending on the nature of reaction species, for example, a positive bias voltage will help to bring negatively charged DNA probe species close to the nanowire surface and increase its reaction chance with the surface amino groups.
Fig. 4a schematically shows another embodiment of a nanoscale sensor having a backgate 46. Figs. 4b shows conductance vs. time at with a backgate voltage ranging from -10V to +10V. Fig. 4c shows conductance vs. backgate voltage. The backgate can be used to inject or withdraw the charge carriers from the nanowire. Therefore, it may be used to control the sensitivity and the dynamic range of the nanowire sensor and to draw analytes to the nanowire.
Figs. 5a and 5b show the conductance for a single silicon nanowire, native and coated, respectively, as a function of pH. As seen in Fig. 4, the conductance of the silicon nanowire changes from 7 to 2.5 when the sample is changed. The silicon nanowire of Fig. 5 has been modified to expose amine groups at the surface of the nanowire. Fig. 5 shows a change in response to pH when compared to the response in Fig. 4. The modified nanowire of Fig. 5 shows a response to milder conditions such as, for example, those present in physiological conditions in blood. Fig. 6 shows the conductance for a silicon nanowire having a surface modified with an oligonucleotide agent reaction entity. The conductance changes dramatically where the complementary oligonucleotide analyte binds to the attached oligonucleotide agent.
Fig. 8a shows the change in the electrostatic environment with change in gate voltage for a single-walled nanotube. Figs. 8b and c, show the change in conductance induced by the presence of NaCL and CrClx of a single- walled carbon nanotube. Fig. 9a shows the change in conductance as nanosensors with hydroxyl surface groups are exposed to pH levels from 2 to 9. Fig 9b shows the change in conductance as nanosensors modified with amine groups are exposed to pH levels from 2 to 9. Fig. 9c show the relative conductance of the nanosensors with changes in pH levels. The results showed a linear response in a wide range of pH, wliich clearly demonstrated the device is suitable for measuring or monitoring pH conditions of a physiological fluid.
Fig. 10a shows an increase in conductance of a silicon nanowire(SiNW) modified with a reaction entity BSA Biotin, as it is exposed first to a blank buffer solution, and then to a solution containing an analyte, 250 nM Streptavidin. Fig. 10b shows an increase in conductance of a SiNW modified with BSA Biotin, as it is exposed first to a blank buffer solution, and then to a solution containing 25 pM Streptavidin. Fig. 10c shows no change in conductance of a bare SiNW as it is exposed first to a blank buffer solution, and then to a solution containing Streptavidin. Fig. lOd shows the conductance of a SiNW modified with BSA Biotin, as it is exposed to a buffer solution, and then to a solution containing d-biotin Streptavidin. Fig. lOe shows the change in conductance of a Biotin modified nanosensor exposed to a blank buffer solution, then to a solution containing Streptavidin, and then again to a blank buffer solution. Replacing Sfreptavidin with the blank buffer does not change the conductance, indicating that the Streptavidin has irreversibly bound to the BSA Biotin modified nanosensor. Fig. lOf shows no change in conductance of a bare SiNW as it is alternately exposed to a buffer solution and a solution containing streptavidin. These results demonstrate the nanowire sensor is suitable for specific detection of bio-markers at very high sensitivity.
Fig. 11a shows a decrease in conductance of a BSA-Biotin modified SiNW as it is exposed first to a blank buffer solution, then to a solution containing antibiotin. The conductance then increases upon replacing the solution containing antibiotin with a blank buffer solution, and then again decreases upon exposing the nanosensor to a solution containing antibiotin. Fig. 11a indicates a reversible binding between biotin and antibiotin. Fig. lib shows the conductance of a bare SiNW during contact with a buffer solution and then a solution containing antibiotin. Fig. l ie shows the change in conductance of a BSA-Biotin modified SiNW during exposure to a buffer, other IgG type antibodies, and then antibiotin, an IgGl type antibody to biotin. Fig. l ie indicates that the BSA biotin modified SiNW detects the presence of antibiotin, without being hindered by the presence of other IgG type antibodies. These results demonstrate the potential of the nanowire sensor for dynamic bio-marker monitoring under a real physiological condition.
Amine modified SiNW may also detect the presence of metal ions. Fig. 12a shows the change in conductance of an amine modified SiNW when alternately exposed to a blank buffer solution and a solution containing ImM Cu(II). Fig. 12b shows the increases in conductance as the amine modified SiNW is exposed to concentrations of Cu(II) from 0.1 mM to ImM. Fig. 12c shows the increase in conductance verses Cu(II) concentration. Fig. 12d shows no change in conductance of an unmodified SiNW when exposed first to a blank buffer solution and then to ImM Cu(II). Fig. 12e shows no change in the conductance of an amine modified SiNW when exposed first to a blank buffer solution and then to ImM Cu(II)-EDTA, wherein the EDTA interferes with the ability of Cu(II) to bind to the modified SiNW. These results demonstrate the potential of the nanowire sensor for use in inorganic chemical analysis. Fig. 13a shows the conductance of a silicon nanowire modified with calmodulin, a calcium binding protein. In fig. 13 a, region 1 shows the conductance of the calmodulin modified silicon when exposed to a blank buffer solution. Region 2 shows the drop in conductance of the same nanowire when exposed to a solution containing calcium ions noted in fig. 3 with a downward arrow. Region 3 shows the increase in conductance of the same nanowire is again contacted with a blank buffer solution, indicated with an upward arrow. The subsequent return of conductance to its original level indicates that the calcium ion is reversible bound to the calmodulin modified nanowire. Fig. 13b shows no change in conductance of an unmodified nanowire when exposed first to a blank buffer solution, and then to a solution containing calcium ions. As indicated by the disclosure above, in one embodiment, the invention provides a nanoscale electrically based sensor for determining the presence or absence of analytes suspected of being present in a sample. The nanoscale provides greater sensitivity in detection than that provided by macroscale sensors. Moreover, the sample size used in nanoscale sensors is less than or equal to about 10 microliters, preferably less than or equal to about 1 microliter, and more preferably less than or equal to about 0.1 microliter. The sample size may be as small as about 10 nanoliters or less. The nanoscale sensor also allows for unique accessibility to biological species and may be used both in vivo and in vitro applications. When used in vivo, the nanoscale sensor and corresponding method result in a minimally invasive procedure.
Fig. 14a shows a calculation of sensitivity for detecting up to 5 charges compared to the doping concentration and nanowire diameter. As indicated, the sensitivity of the nanowire may be controlled by changing the doping concentration or by controlling the diameter of the nanowire. For example, increasing the doping concentration of a nanowire increases the ability of the nanowire to detect more charges. Also, a 20 nm wire requires less doping than a 5 nm nanowire for detecting the same number of charges. Fig. 14b shows a calculation of a threshold doping density for detecting a single charge compared to the diameter of a nanowire. Again, a 20 nm nanowire requires less doping than a 5 nm nanowire to detect a single charge.
Fig. 15 a shows a schematic view of an InP nanowire. The nanowire may be homogeneous, or may comprise discrete segments of n and p type dopants. Fig. 15b shows the change in luminescence of the nanowire of 15a over time as pH is varied. As indicated, the intensity of the light emission of a nanowire changes relative to the level of binding. As the pH increases, the light intensity drops, and as the pH decreases, the light intensity increases. One embodiment of the invention contemplates individually addressed light signal detection by sweeping through each electrode in a microarray. Another embodiment of the invention contemplates a two signal detector, such as, an optical sensor combined with an electrical detector .
Fig. 16a depicts one embodiment of a nanowire sensor. As show in Fig. 16a, the nanowire sensor of the invention comprises a single molecule of doped silicon 50. The doped silicon is shaped as a tube, and the doping can be n-doped or p-doped. Either way, the doped silicon nanowire forms a high resistance semiconductor material across which a voltage may be applied. The exterior surface and the interior surface of the tube will have an oxide formed thereon and the surface of the tube can act as the gate 52 of an FET device and the electrical contacts at either end of the tube allow the tube ends to acts as the drain 56 and the source 58. In the depicted embodiment the device is symmetric and either end of the device may be considered the drain or the source. For purpose of illustration, the nanowire of Fig. 16a defines the left-hand side as the source and the right hand side as the drain. Fig. 16a also show that the nanowire device is disposed upon and electrically connected to two conductor elements 54. Figs. 16a and 16b illustrate an example of a chemical /or ligand-gated Field Effects Transistor (FET). FETs are well know in the art of electronics. Briefly, a FET is a 3 -terminal device in which a conductor between 2 electrodes, one connected to the drain and one connected to the source, depends on the availability of charge carriers in a channel between the source and drain. FETs are described in more detail in The Art of Electronics, Second Edition by Paul Horowitz and Winfield Hill, Cambridge University Press, 1989, pp. 113-174, the entire contents of which is hereby incorporated by reference. This availability of charge carriers is controlled by a voltage applied to a third "control electrode" also know as the gate electrode. The conduction in the channel is controlled by a voltage applied to the gate electrode which produces an electric field across the channel. The device of Figs. 16a and 16b may be considered a chemical or ligand-FET because the chemical or ligand provides the voltage at the gate which produced the electric field which changes the conductivity of the channel. This change in conductivity in the channel effects the flow of current through the channel. For this reason, a FET is often referred to as a transconductant device in which a voltage on the gate controls the current through the channel through the source and the drain. The gate of a FET is insulated from the conduction channel, for example, using a semi conductor junction such in a junction FET (JFET) or using an oxide insulator such as in a metal oxide semiconductor FET (MOSFET). Thus, in Figures A and B, the SIO2 exterior surface of the nanowire sensor may serve as the gate insulation for the gate.
In application, the nanowire device illustrated in Figure A provides an FET device that may be contacted with a sample or disposed within the path of a sample flow. Elements of interest within the sample can contact the surface of the nanowire device and, under certain conditions, bind or otherwise adhere to the surface. To this end the exterior surface of the device may have reaction entities, e.g., binding partners that are specific for a moiety of interest. The binding partners will attract the moieties or bind to the moieties so that moieties of interest within the sample will adhere and bind to the exterior surface of the nanowire device. An example of this is shown in Fig. 16c where there is depicted a moiety of interest 60 (not drawn to scale) being bound to the surface of the nanowire device.
Also shown, with reference to Fig. 16c, that as the moieties build up, a depletion region 62 is created within the nanowire device that limits the current passing through the wire. The depletion region can be depleted of holes or electrons, depending upon the type of channel. This is shown schematically in Fig. 16d below. The moiety has a charge that can lead to a voltage difference across the gate/drain junction.
A nanoscale sensor of the present invention can collect real time data. The real time data may be used, for example, to monitor the reaction rate of a specific chemical or biological reaction. Physiological conditions or drug concentrations present in vivo may also produce a real time signal that may be used to control a drug delivery system. For example, the present invention includes, in one aspect, an integrated system, comprising a nanowire detector, a reader and a computer controlled response system. In this example, the nanowire detects a change in the equilibrium of an analyte in the sample, feeding a signal to the computer controlled response system causing it to withhold or release a chemical or drug. This is particularly useful as an implantable drug or chemical delivery system because of its small size and low energy requirements. Those of ordinary skill in the art are well aware of the parameters and requirements for constructing implantable devices, readers, and computer-controlled response systems suitable for use in connection with the present invention. That is, the knowledge of those of ordinary skill in the art, coupled with the disclosure herein of nanowires as sensors, enables implantable devices, real-time measurement devices, integrated systems, and the like. Such systems can be made capable of monitoring one, or a plurality of physiological characteristics individually or simultaneously. Such physiological characteristics can include, for example, oxygen concentration, carbon dioxide concentration, glucose level, concentration of a particular drug, concentration of a particular drug by-product, or the like. Integrated physiological devices can be constructed to carry out a function depending upon a condition sensed by a sensor of the invention. For example, a nanowire sensor of the invention can sense glucose level and, based upon the determined glucose level can cause the release of insulin into a subject through an appropriate controller mechanism.
In another embodiment, the article may comprise a cassette comprising a sample exposure region and a nanowire. The detection of an analyte in a sample in the sample exposure region may occur while the cassette is disconnected to a detector apparatus, allowing samples to be gathered at one site, and detected at another. The cassette may be operatively connectable to a detector apparatus able to determine a property associated with the nanowire. As used herein, a device is "operatively connectable" when it has the ability to attach and interact with another apparatus.
In another embodiment, one or more nanowires may be positioned in a microfluidic channel. One or more different nanowires may cross the same microchannel at different positions to detect a different analyte or to measure flow rate of the same analyte. In another embodiment, one or more nanowires positioned in a microfluidic channel may form one of a plurality of analytic elements in a micro needle probe or a dip and read probe. The micro needle probe is implantable and capable of detecting several analytes simultaneously in real time. In another embodiment, one or more nanowires positioned in a microfluidic channel may form one of the analytic elements in a microarray for a cassette or a lab on a chip device. Those skilled in the art would know such cassette or lab on a chip device will be in particular suitable for high throughout chemical analysis and combinational drug discovery. Moreover, the associated method of using the nanoscale sensor is fast and simple, in that it does not require labeling as in other sensing techniques. The ability to include multiple nanowires in one nanoscale sensor, also allows for the simultaneous detection of different analytes suspected of being present in a single sample. For example, a nanoscale pH sensor may include a plurality of nanoscale wires that each detect different pH levels, or a nanoscale oligo sensor with multiple nanoscale wires may be used to detect multiple sequences, or combination of sequences.
Those skilled in the art would readily appreciate that all parameters listed herein are meant to be exemplary and that actual parameters will depend upon the specific application for which the methods and apparatus of the present invention are used. It is, therefore, to be understood that the foregoing embodiments are presented by way of example only and that, within the scope of the appended claims and equivalents thereto, the invention may be practiced otherwise than as specifically described. What is claimed is:

Claims

1. An article comprising: a sample exposure region, and a nanowire, at least a portion of which is addressable by a sample in the sample exposure region.
2. The article as in claim 1, further comprising: a detector constructed and arranged to determine a property associated with the nanowire.
3. The article as in claim 1, wherein the sample exposure region comprises a microchannel.
4. The article as in claim 1, wherein the sample exposure region comprises a well.
5. The article as in claim 1, wherein the nanowire is a semiconductor nanowire.
6. The article as in claim 5, wherein the semiconductor nanowire is a silicon nanowire.
7. The article as in claim 5, wherein the semiconductor nanowire contains a P-N junction.
8. The article as in claim 5, wherein the semiconductor nanowire contains multiple p- n junctions.
9. The article as in claim 5, wherein the semiconductor nanowire is one of plurality of nanowires wherein each of the plurality of nanowires is doped with different concentrations of a dopant.
10. The article as in claim 1 , wherein the nanowire is a carbon nanotube.
11. The article as in claim 10, wherein the nanotube is a single- walled nanotube.
12. The article as in claim 10, wherein the nanotube is a multi- walled nanotube.
13. The article as in claim 1 , wherein the nanowire is an unmodified nanowire.
14. The article as in claim 24, wherein the reaction entity comprises a binding partner of the analyte.
15. The article as in claim 14, wherein the binding partner is non-specific.
16. The article as in claim 14, wherein the binding partner is specific.
17. The article as in claim 14, wherein the binding partner comprises chemical group on the nanowire surface, wherein the combined selected from groups consisting of -OH, -CHO, -COOH, -SO3H, -CN, -NH2, -SH, -COSH, COOR, Halide.
18. The article as in claim 14, wherein the binding partner comprises a specific biomolecular receptor selected from the group consisting of DNA, fragments of a DNA, antibody, antigen, protein, and enzyme.
19. The article as in claim 14, wherein the binding partner comprises short polymer chains grafted on the nanowire surface, wherein the chains are selected form a group of polymers consisting of: polyamide, polyester, polyacrylic, polyimide.
20. The article as in claim 14, wherein the binding partner comprises a thin hydrogel layer coated on the surface of the nanowire.
21. The article as in claim 14, wherein the binding partner comprises a thin coating on the surface of nanowires, wherein the coating is selected form the group consisting of oxides, sulfides and selenides.
22. The article as in claim 1, wherein the nanowire comprises a chemical-gated nanowire field effect transistor wherein an electrical characteristic of the nanowire is sensitive to a chemical change on a surface of the nanowire.
23. The article as in claim 1, wherein the nanowire comprises a material selected from the group consisting of an electroluminescent material, a photoluminescent material, and a diode, wherein a light emitting property of the nanowire is sensitive to a chemical change on a surface of the nanowire.
24. The article as in claim 1 , further comprising a reaction entity positioned relative to the nanowire such that an interaction between the reaction entity and an analyte in the sample causes a detectable change in a property of the nanowire.
25. The article as in claim 24, wherein the reaction entity is selected from the group consisting of a nucleic acid, an antibody, a sugar, a carbohydrate, and a protein.
26. The article as in claim 24, wherein the reaction entity comprises a catalyst.
27. The article as in claim 24, wherein the reaction entity comprises a quantum dot.
28. The article as in claim 24, wherein the reaction entity comprises a polymer.
29. The article as in claim 24, wherein the reaction entity is fastened to the nanowire.
30. The article as in claim 24, wherein the reaction entity is positioned within 5 nanometers of the nanowire.
31. The article as in claim 24, wherein the reaction entity is positioned within 3 nanometers of the nanowire.
32. The article as in claim 24, wherein the reaction entity is positioned within 1 nanometer of the nanowire.
33. The article as in claim 24, wherein the reaction entity is attached to the nanowire through a linker.
34. The article as in claim 24, wherein the reaction entity is attached to the nanowire directly.
35. The article as in claim 24, wherein the reaction entity is positioned relative to the nanowire such that it is electrically coupled to the nanowire wherein a detectable interaction between an analyte in the sample and the reaction entity causes a detectable change in an electrical property of the nanowire.
36. An article as in claim 3, wherein the microchannel has a minimum lateral dimension less than 1 mm.
37. The article of claim 3, wherein the microchannel has a minimum lateral dimension less than 0.5 mm.
38. The article of claim 3, wherein the microchannel has a minimum lateral dimension less than 200 microns.
39. The article as in claim 1, wherein the nanowire is one of a plurality of nanowires comprising a sensor.
40. The article as in claim 39, wherein each of the plurality of the nanowires includes at least one portion positioned in the sample exposure region.
41. The article as in claim 39, wherein the plurality of nanowires comprises at least 10 nanowires.
42. The article as in claim 41, wherein the multiple nanowires are arranged in parallel and addressed by a single pair of the electrodes.
43. The article as in claim 41, wherein the multiple nanowires are arranged in parallel to each other and addressed individually by multiple pairs of electrodes.
44. The article as in claim 43, wherein the multiple nanowires are different, each capable of detecting a different analyte.
45. The article as in claim 41 , wherein the multiple nanowires are oriented randomly.
46. The article as in claim 1 , wherein the nanowire is positioned on the surface of a substrate.
47. The article as in claim 1, wherein the sample exposure region comprises a microchannel and the nanowire is suspended in the microchannel.
48. The article as in claim 1, where the article is one of a plurality of nanowire sensors in a sensor array formed on a surface of a substrate.
49. The article as in claim 48, wherein the substrate is selected from the group consisting of glass, silicon dioxide-coated silicon and a polymer.
50. The article as in claim 3, wherein the microchannel is dimensioned so as to produce a Reynolds number (Re) less than about 1 for a fluid comprising the sample.
51. The article as in claim 42, wherein the Reynolds number is less than about 0.01.
52. The article as in claim 1, constructed and arranged to receive a fluidic sample in the sample exposure region.
53. The article as in claim 44 wherein the sample is a gas stream.
54. The article as in claim 44, wherein the sample is a liquid.
55. The article as in claim 1, wherein the article comprises a plurality of nanowires and a plurality of reaction entities, at least some of which are positioned relative to the nanowires such that an interaction between the reaction entity and an analyte causes a detectable change in a property of a nanowire.
56. The article as in claim 55, wherein at least one reaction entity is positioned within 100 nanometers of a nanowire.
57. The article as in claim 55, wherein at least one reaction entity is positioned within 50 nanometers of a nanowire.
58. The article as in claim 55, wherein at least one reaction entity is positioned within 10 nanometers of a nanowire.
59. The article as in claim 1, where in the sample exposure region is addressable by a biological sample.
60. The article as in claim 1, where the article forms sensing elements for a micro- needle probe.
61. The article as in claim 60, wherein the micro-needle is implantable into a living subject.
62. The article as in claim 60, wherein the article is a sensor capable of monitoring a physiological characteristic.
63. The article as in claim 60, wherein the sensor is capable of monitoring a plurality of physiological characteristics.
64. The article as in claim 60, wherein the article is capable of simultaneously monitoring a plurality of physiological characteristics.
65. The article as in claim 60, wherein the article is capable of determining at least one of oxygen concentration, carbon dioxide concentration, and glucose level in a subject.
66. The article as in claim 1, where the article forms sensing elements for an integrated dip-probe sensor.
67. The article as in claim 1, where the article forms sensing elements for a plug and play sensor array.
68. The article as in claim 2, wherein the article is capable of delivering a stimulus to the nanowire and the detector is constructed and arranged to determine a signal resulting from the stimulus.
69. The article as in claim 68, wherein the stimulus is selected from the group consisting of constant current/voltage, an alternating voltage, and electromagnetic radiation.
70. The article as in claim 2, wherein the detector is constructed and arranged to determine an electrical property associated with the nanowire.
71. The article as in claim 2, wherein the detector is constructed and arranged to determine a change in an electromagnetic property associated with a nanowire.
72. The article as in claim 2, where the detector is constructed and arranged to determine a change in a light emission property associated with the nanowire.
73. A method comprising: contacting a nanowire with a sample suspected of containing an analyte; and determining a change in a property of the nanowire.
74. The method as in claim 73, comprising first measuring a property of the nanowire, then contacting the nanowire with the sample, then determining a change in a property associated with the nanowire.
75. A method comprising: providing an nanowire and contacting the nanowire with a sample having a volume of less than about 10 microliters; and measuring a change in a property of the nanowire resultant from the contact.
76. A method comprising: contacting a nanowire with a sample suspected of containing an analyte and determining the presence or quantity of the analyte by measuring a change in a property of the nanowire resulting from the contact, wherein less than ten molecules of the analyte contribute to the change in the property detected.
77. The method of claim 76, wherein less than 5 molecules of the species contribute to the change in electrical property.
78. The method of claim 77, wherein one molecule of the species contributes to the change in electrical property detected.
79. An article comprising: a sample cassette comprising a sample exposure region and a nanowire, at least a portion of which is addressable by a sample in the sample exposure region, wherein the sample cassette is operatively connectable to a detector apparatus able to determine a property associated with the nanowire.
80. A sensor comprising: at least one nanowire; and means for measuring a change in a property of the at least one nanowire.
81. A method of detecting an analyte, comprising : contacting a nanowire with a sample; and determining a property associated with the nanowire where a change in the property when the nanowire is contacted with the sample indicates the presence or quantity of the analyte in the sample.
82. A method comprising: contacting an electrical conductor with a sample; and determining the presence or quantity of an analyte in the sample by measuring a change in a property of the conductor resultant from the contact, wherein less than ten molecules of the analyte contribute to the a change in said property.
83. An article comprising : a nanowires core region and an outer region, wherein outer region comprises functional moieties which are chemically or physically bonded to the nanowire core.
84. The article as in claim 83, wherein the core is a semiconductor nanowire, comprising material selected from the group consisting of: Si, GaN, AIN, InN, GaAs, AlAs, InAs, InP, GaP, SiC, CdSe, ZnSe, ZnTe, ZnO, SnO2, and TiO2.
85. The article as in claim 83, wherein the nanowire core has a diameter ranging from 0.5 nm to 200 nm.
86. The article as in claim 83, wherein the nanowire core has an aspect ratio more than 2.
87. The article as in claim 83, wherein the functional moieties at the outer region are groups or combinational groups selected from the groups consisting of -OH, -CHO, - COOH, -SO3H, -CN, -NH2, -SH, -COSH, COOR, and halide.
88. The article as in claim 83, wherein, the functional moieties are groups selected from the group consisting of amino acids, proteins, DNA, antibodies, antigens, and enzymes.
89. The article as in claim 83, wherein the functional moieties comprise grafted polymer chains with chain length less than the diameter of the nanowire core, selected from a group of polymers including polyamide, polyester, polyimide, polyacrylic.
90. The article as in claim 83, where the functional moieties comprise a thin coating covering the surface of the nanowire core, selected from the group consisting of metals, semiconductors, and insulators.
91. The article as in claim 90, wherein the coating is selected from the group consisting of a metallic element, anoxide, a sulfide, a nifride, a selenide, a polymer, and a polymer gel.
92. A nanowire sensor device, comprising a semiconductor nanowire having a first end in electrical contact with a conductor to form a source electrode, a second end in electrical contact with a conductor to form a drain electrode, and an exterior surface having an oxide formed thereon to form a gate electrode, and a binding agent having specificity for a selected moiety and being bound to the exterior surface, whereby a voltage at the gate electrode varies in response to the binding of the moiety to the binding agent to provide a chemically gated field effect sensor device.
93. A analyte-gated field effect transistor having a predetermined current- voltage characteristic and adapted for use as a chemical or biological sensor, comprising:
(a) a substrate formed of a first insulating material; (b) a source electrode disposed on the substrate;
(c) a drain electrode disposed on the substrate, (c) a semiconductor nanowire disposed between the source and drain electrodes to form a field effect transistor having a predetermined current-voltage characteristic; and
(d) an analyte-specific binding agent disposed on a surface of the nanowire, wherein a binding event occurring between a target analyte and the binding agent causes a detectable change in the current- voltage characteristic of said field effect transistor.
94. The analyte-gated field effect transistor of claim 93, wherein the analyte is a chemical moiety.
95. The analyte-gated field effect transistor of claim 94, wherein the chemical moiety is a small organic compound.
96. The analyte-gated field effect transistor of claim 94, wherein the chemical moiety is an ion.
97. The analyte-gated field effect transistor of claim 93, wherein the analyte is a biological moiety.
98. The analyte-gated field effect transistor of claim 97, wherein the analyte is selected from the group consisting of proteins, nucleic acid, carbohydrates, lipids, and steroids.
99. An article comprising array of at least 100 of said analyte-gated field effect transistor of claim 93.
100. The article of claim 99, which is homogenous with respect to a population of analyte-specific binding agents associated with the article.
101. The article of claim 99, which is heterologous with respect to a population of analyte-specific binding agents associated with the article.
102. The article as in claim 24, wherein the reaction entity is positioned relative to the nanowires such that it is optically coupled to the nanowire wherein a detectable interaction between an analyte in the sample and the reaction entity causes a detectable change in a property of the nanowire.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8993346B2 (en) 2009-08-07 2015-03-31 Nanomix, Inc. Magnetic carbon nanotube based biodetection
US9103775B2 (en) 2002-01-16 2015-08-11 Nanomix, Inc. Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices
US9149836B2 (en) 2004-06-08 2015-10-06 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
US9291613B2 (en) 2002-06-21 2016-03-22 Nanomix, Inc. Sensor having a thin-film inhibition layer
US9299430B1 (en) 2015-01-22 2016-03-29 Nantero Inc. Methods for reading and programming 1-R resistive change element arrays

Families Citing this family (658)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU782000B2 (en) 1999-07-02 2005-06-23 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US20060175601A1 (en) * 2000-08-22 2006-08-10 President And Fellows Of Harvard College Nanoscale wires and related devices
JP5013650B2 (en) 2000-08-22 2012-08-29 プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ Doped elongated semiconductors, growth of such semiconductors, devices containing such semiconductors, and the manufacture of such devices
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
EP1342075B1 (en) 2000-12-11 2008-09-10 President And Fellows Of Harvard College Device contaning nanosensors for detecting an analyte and its method of manufacture
US7250147B2 (en) 2001-01-29 2007-07-31 Tour James M Process for derivatizing carbon nanotubes with diazonium species
GB2412370B (en) * 2001-01-29 2005-11-09 Univ Rice William M Process for derivatizing carbon nanotubes with diazonium species and compositions thereof
JP3578098B2 (en) * 2001-03-16 2004-10-20 富士ゼロックス株式会社 Manufacturing method of electrical connector, electrical connector, and electrical wiring method
WO2002095099A1 (en) * 2001-03-29 2002-11-28 Stanford University Noncovalent sidewall functionalization of carbon nanotubes
JP2004532133A (en) * 2001-03-30 2004-10-21 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア Method for assembling nanostructures and nanowires and device assembled therefrom
US7459312B2 (en) * 2001-04-18 2008-12-02 The Board Of Trustees Of The Leland Stanford Junior University Photodesorption in carbon nanotubes
US20030113714A1 (en) * 2001-09-28 2003-06-19 Belcher Angela M. Biological control of nanoparticles
US20030148380A1 (en) 2001-06-05 2003-08-07 Belcher Angela M. Molecular recognition of materials
US20020197474A1 (en) * 2001-06-06 2002-12-26 Reynolds Thomas A. Functionalized fullerenes, their method of manufacture and uses thereof
KR100439579B1 (en) * 2001-06-07 2004-07-12 학교법인 포항공과대학교 Synthesis of organic nanotubes and synthesis of ultrathin metal nanowires using same as templates
US7141416B2 (en) * 2001-07-12 2006-11-28 Burstein Technologies, Inc. Multi-purpose optical analysis optical bio-disc for conducting assays and various reporting agents for use therewith
US7186381B2 (en) * 2001-07-20 2007-03-06 Regents Of The University Of California Hydrogen gas sensor
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US7563711B1 (en) 2001-07-25 2009-07-21 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
KR100455284B1 (en) * 2001-08-14 2004-11-12 삼성전자주식회사 High-throughput sensor for detecting biomolecules using carbon nanotubes
AU2002352814A1 (en) * 2001-11-20 2003-06-10 Andrew R. Barron Coated fullerenes, composites and dielectrics made therefrom
US6921462B2 (en) 2001-12-17 2005-07-26 Intel Corporation Method and apparatus for producing aligned carbon nanotube thermal interface structure
US6882767B2 (en) * 2001-12-27 2005-04-19 The Regents Of The University Of California Nanowire optoelectric switching device and method
US7955559B2 (en) 2005-11-15 2011-06-07 Nanomix, Inc. Nanoelectronic electrochemical test device
US20070178477A1 (en) * 2002-01-16 2007-08-02 Nanomix, Inc. Nanotube sensor devices for DNA detection
US20030134433A1 (en) * 2002-01-16 2003-07-17 Nanomix, Inc. Electronic sensing of chemical and biological agents using functionalized nanostructures
US20070208243A1 (en) * 2002-01-16 2007-09-06 Nanomix, Inc. Nanoelectronic glucose sensors
US6894359B2 (en) 2002-09-04 2005-05-17 Nanomix, Inc. Sensitivity control for nanotube sensors
US20040132070A1 (en) * 2002-01-16 2004-07-08 Nanomix, Inc. Nonotube-based electronic detection of biological molecules
US7956525B2 (en) 2003-05-16 2011-06-07 Nanomix, Inc. Flexible nanostructure electronic devices
US8152991B2 (en) 2005-10-27 2012-04-10 Nanomix, Inc. Ammonia nanosensors, and environmental control system
US20060228723A1 (en) * 2002-01-16 2006-10-12 Keith Bradley System and method for electronic sensing of biomolecules
US20050279987A1 (en) * 2002-09-05 2005-12-22 Alexander Star Nanostructure sensor device with polymer recognition layer
US20050003459A1 (en) * 2002-01-30 2005-01-06 Krutzik Siegfried Richard Multi-purpose optical analysis disc for conducting assays and related methods for attaching capture agents
US7714398B2 (en) * 2002-09-05 2010-05-11 Nanomix, Inc. Nanoelectronic measurement system for physiologic gases and improved nanosensor for carbon dioxide
US7522040B2 (en) * 2004-04-20 2009-04-21 Nanomix, Inc. Remotely communicating, battery-powered nanostructure sensor devices
AU2003225839A1 (en) * 2002-03-15 2003-09-29 Nanomix. Inc. Modification of selectivity for sensing for nanostructure device arrays
US20080021339A1 (en) * 2005-10-27 2008-01-24 Gabriel Jean-Christophe P Anesthesia monitor, capacitance nanosensors and dynamic sensor sampling method
US7312095B1 (en) * 2002-03-15 2007-12-25 Nanomix, Inc. Modification of selectivity for sensing for nanostructure sensing device arrays
US20070048180A1 (en) * 2002-09-05 2007-03-01 Gabriel Jean-Christophe P Nanoelectronic breath analyzer and asthma monitor
US20070048181A1 (en) * 2002-09-05 2007-03-01 Chang Daniel M Carbon dioxide nanosensor, and respiratory CO2 monitors
US7547931B2 (en) * 2003-09-05 2009-06-16 Nanomix, Inc. Nanoelectronic capnometer adaptor including a nanoelectric sensor selectively sensitive to at least one gaseous constituent of exhaled breath
EP1353170A3 (en) * 2002-03-28 2004-02-04 Interuniversitair Micro-Elektronica Centrum (IMEC) Field effect transistor for sensing applications
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US20040026684A1 (en) * 2002-04-02 2004-02-12 Nanosys, Inc. Nanowire heterostructures for encoding information
AU2003243165A1 (en) * 2002-04-26 2003-11-10 The Penn State Research Foundation Integrated nanomechanical sensor array chips
US6905667B1 (en) 2002-05-02 2005-06-14 Zyvex Corporation Polymer and method for using the polymer for noncovalently functionalizing nanotubes
US20040067530A1 (en) * 2002-05-08 2004-04-08 The Regents Of The University Of California Electronic sensing of biomolecular processes
US7687258B1 (en) * 2002-05-20 2010-03-30 Maki Wusi C Direct electric biological agent detector
US6548313B1 (en) * 2002-05-31 2003-04-15 Intel Corporation Amorphous carbon insulation and carbon nanotube wires
US7304128B2 (en) 2002-06-04 2007-12-04 E.I. Du Pont De Nemours And Company Carbon nanotube binding peptides
US6914279B2 (en) * 2002-06-06 2005-07-05 Rutgers, The State University Of New Jersey Multifunctional biosensor based on ZnO nanostructures
AU2003290510A1 (en) * 2002-06-26 2004-04-19 Cornell Research Foundation, Inc. Small scale wires with microelectromechanical devices
DE10229267A1 (en) * 2002-06-28 2004-01-29 Philips Intellectual Property & Standards Gmbh Optical signal processing device and nonlinear optical component
US6946851B2 (en) * 2002-07-03 2005-09-20 The Regents Of The University Of California Carbon nanotube array based sensor
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
EP1387169B1 (en) * 2002-08-02 2006-05-24 Sony Deutschland GmbH Method of attaching hydrophilic species to hydrophilic macromolecules and immobilizing the hydrophilic macromolecules on a hydrophobic surface
US7257439B2 (en) 2002-08-21 2007-08-14 New York University Brain-machine interface systems and methods
US6849911B2 (en) * 2002-08-30 2005-02-01 Nano-Proprietary, Inc. Formation of metal nanowires for use as variable-range hydrogen sensors
US7287412B2 (en) * 2003-06-03 2007-10-30 Nano-Proprietary, Inc. Method and apparatus for sensing hydrogen gas
US20070114573A1 (en) * 2002-09-04 2007-05-24 Tzong-Ru Han Sensor device with heated nanostructure
US20060263255A1 (en) * 2002-09-04 2006-11-23 Tzong-Ru Han Nanoelectronic sensor system and hydrogen-sensitive functionalization
US7662313B2 (en) 2002-09-05 2010-02-16 Nanosys, Inc. Oriented nanostructures and methods of preparing
AU2002334664A1 (en) * 2002-09-17 2004-04-08 Midwest Research Institute Carbon nanotube heat-exchange systems
US6583014B1 (en) * 2002-09-18 2003-06-24 Taiwan Semiconductor Manufacturing Company Horizontal surrounding gate MOSFETS
US20050064508A1 (en) 2003-09-22 2005-03-24 Semzyme Peptide mediated synthesis of metallic and magnetic materials
US7015471B2 (en) * 2002-09-25 2006-03-21 North Carolina State University Surface plasmon resonance systems and methods having a variable charge density layer
JP4009683B2 (en) * 2002-09-26 2007-11-21 アークレイ株式会社 Method for manufacturing analytical tool
US7067867B2 (en) * 2002-09-30 2006-06-27 Nanosys, Inc. Large-area nonenabled macroelectronic substrates and uses therefor
US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
EP1563555A4 (en) * 2002-09-30 2009-08-26 Nanosys Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
AU2003283973B2 (en) * 2002-09-30 2008-10-30 Oned Material Llc Large-area nanoenabled macroelectronic substrates and uses therefor
US7619562B2 (en) * 2002-09-30 2009-11-17 Nanosys, Inc. Phased array systems
CN1703730A (en) * 2002-09-30 2005-11-30 纳米系统公司 Integrated displays using nanowire transistors
CA2499944A1 (en) * 2002-09-30 2004-04-15 Nanosys, Inc. Integrated displays using nanowire transistors
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US6717358B1 (en) * 2002-10-09 2004-04-06 Eastman Kodak Company Cascaded organic electroluminescent devices with improved voltage stability
AU2003282548A1 (en) * 2002-10-10 2004-05-04 Nanosys, Inc. Nano-chem-fet based biosensors
DE10247679A1 (en) * 2002-10-12 2004-04-22 Fujitsu Ltd., Kawasaki Semiconductor body structure, as a biosensor, has two thick layers of one material separated by a thin different intermediate layer forming a nano gap, with organic wire structures as the contacts
WO2004040291A1 (en) * 2002-10-29 2004-05-13 Cornell Research Foundation, Inc. Chemical-sensitive floating gate field effect transistor
US20040093497A1 (en) * 2002-11-08 2004-05-13 Arangio Joseph P. Authentication and ownership system, method and database
WO2004044586A1 (en) * 2002-11-08 2004-05-27 Nanomix, Inc. Nanotube-based electronic detection of biological molecules
US7357877B2 (en) 2002-11-18 2008-04-15 Koninklijke Philips Electronics N.V. Dispersion of nanowires of semiconductor material
ATE486277T1 (en) * 2002-11-19 2010-11-15 Univ Rice William M FIELD EFFECT TRANSISTOR WITH FUNCTIONALIZED CARBON NANOTUBE AND PRODUCTION METHOD THEREOF
AU2003295721A1 (en) * 2002-11-19 2004-06-15 William Marsh Rice University Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission
US7162308B2 (en) * 2002-11-26 2007-01-09 Wilson Greatbatch Technologies, Inc. Nanotube coatings for implantable electrodes
US7163659B2 (en) * 2002-12-03 2007-01-16 Hewlett-Packard Development Company, L.P. Free-standing nanowire sensor and method for detecting an analyte in a fluid
US7491428B2 (en) * 2002-12-04 2009-02-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Controlled deposition and alignment of carbon nanotubes
US7211143B2 (en) * 2002-12-09 2007-05-01 The Regents Of The University Of California Sacrificial template method of fabricating a nanotube
US7898005B2 (en) * 2002-12-09 2011-03-01 The Regents Of The University Of California Inorganic nanotubes and electro-fluidic devices fabricated therefrom
US7355216B2 (en) * 2002-12-09 2008-04-08 The Regents Of The University Of California Fluidic nanotubes and devices
JP4832759B2 (en) * 2002-12-11 2011-12-07 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク Method for electronically detecting at least one specific interaction between a probe molecule and a target biomolecule
US20040126802A1 (en) * 2002-12-12 2004-07-01 Affymetrix, Inc. Nanotube-based microarrays
JP4428921B2 (en) * 2002-12-13 2010-03-10 キヤノン株式会社 Nanostructure, electronic device, and manufacturing method thereof
JP4434575B2 (en) * 2002-12-13 2010-03-17 キヤノン株式会社 Thermoelectric conversion element and manufacturing method thereof
US20040200734A1 (en) * 2002-12-19 2004-10-14 Co Man Sung Nanotube-based sensors for biomolecules
US6936496B2 (en) 2002-12-20 2005-08-30 Hewlett-Packard Development Company, L.P. Nanowire filament
WO2004099307A2 (en) * 2003-02-07 2004-11-18 Wisconsin Alumni Research Foundation Nanocylinder-modified surfaces
US20040186459A1 (en) * 2003-03-20 2004-09-23 Michael Shur Fluid delivery to cells and sensing properties of cells using nanotubes
WO2004088755A1 (en) 2003-04-04 2004-10-14 Startskottet 22286 Ab Nanowhiskers with pn junctions and methods of fabricating thereof
US7608147B2 (en) 2003-04-04 2009-10-27 Qunano Ab Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
US7135057B2 (en) * 2003-04-16 2006-11-14 Hewlett-Packard Development Company, L.P. Gas storage medium and methods
US7579077B2 (en) * 2003-05-05 2009-08-25 Nanosys, Inc. Nanofiber surfaces for use in enhanced surface area applications
US7972616B2 (en) 2003-04-17 2011-07-05 Nanosys, Inc. Medical device applications of nanostructured surfaces
US20050038498A1 (en) * 2003-04-17 2005-02-17 Nanosys, Inc. Medical device applications of nanostructured surfaces
US20060122596A1 (en) * 2003-04-17 2006-06-08 Nanosys, Inc. Structures, systems and methods for joining articles and materials and uses therefor
US7415299B2 (en) * 2003-04-18 2008-08-19 The Regents Of The University Of California Monitoring method and/or apparatus
AU2003250225A1 (en) * 2003-04-22 2004-11-19 Commissariat A L'energie Atomique A process for modifying at least one electrical property of a nanotube or a nanowire and a transistor incorporating it.
US7410904B2 (en) * 2003-04-24 2008-08-12 Hewlett-Packard Development Company, L.P. Sensor produced using imprint lithography
TWI427709B (en) * 2003-05-05 2014-02-21 Nanosys Inc Nanofiber surfaces for use in enhanced surface area applications
US7803574B2 (en) 2003-05-05 2010-09-28 Nanosys, Inc. Medical device applications of nanostructured surfaces
WO2005019793A2 (en) 2003-05-14 2005-03-03 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US9234867B2 (en) 2003-05-16 2016-01-12 Nanomix, Inc. Electrochemical nanosensors for biomolecule detection
JP4774476B2 (en) * 2004-02-16 2011-09-14 独立行政法人科学技術振興機構 sensor
US7935989B2 (en) 2003-05-23 2011-05-03 Japan Science And Technology Agency Single-electron transistor, field-effect transistor, sensor, method for producing sensor, and sensing method
US7910064B2 (en) * 2003-06-03 2011-03-22 Nanosys, Inc. Nanowire-based sensor configurations
US20070240491A1 (en) * 2003-06-03 2007-10-18 Nano-Proprietary, Inc. Hydrogen Sensor
KR100525764B1 (en) * 2003-06-13 2005-11-04 한국과학기술원 Biosensor using the conductive carbon nanotubes and method thereof
US7244799B2 (en) * 2003-07-09 2007-07-17 Kansas State University Research Foundation Siloxanes and methods of synthesis thereof using metallic nanoparticle catalysts
EP1652218A2 (en) 2003-08-04 2006-05-03 Nanosys, Inc. System and process for producing nanowire composites and electronic substrates therefrom
US20050036905A1 (en) * 2003-08-12 2005-02-17 Matsushita Electric Works, Ltd. Defect controlled nanotube sensor and method of production
KR100746867B1 (en) * 2003-08-29 2007-08-07 도쿠리쓰교세이호징 가가쿠 기주쓰 신코 기코 Field-effect transistor, single electron transistor, and sensor using same
JP2005077210A (en) * 2003-08-29 2005-03-24 National Institute For Materials Science Biomolecule detecting element and nucleic acid analyzing method using it
US7632234B2 (en) 2003-08-29 2009-12-15 Medtronic, Inc. Implantable biosensor devices for monitoring cardiac marker molecules
JP4669213B2 (en) * 2003-08-29 2011-04-13 独立行政法人科学技術振興機構 Field effect transistor, single electron transistor and sensor using the same
WO2005062031A1 (en) * 2003-09-05 2005-07-07 Nanomix, Inc. Nanoelectronic capnometer adapter
US7416993B2 (en) 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
JP2007505323A (en) * 2003-09-12 2007-03-08 ナノミックス・インコーポレーテッド Nanoelectronic sensor for carbon dioxide
US7235159B2 (en) * 2003-09-17 2007-06-26 Molecular Nanosystems, Inc. Methods for producing and using catalytic substrates for carbon nanotube growth
US20050214197A1 (en) * 2003-09-17 2005-09-29 Molecular Nanosystems, Inc. Methods for producing and using catalytic substrates for carbon nanotube growth
DE10344814B3 (en) * 2003-09-26 2005-07-14 Infineon Technologies Ag Storage device for storing electrical charge and method for its production
US7399400B2 (en) 2003-09-30 2008-07-15 Nano-Proprietary, Inc. Nanobiosensor and carbon nanotube thin film transistors
US7223611B2 (en) * 2003-10-07 2007-05-29 Hewlett-Packard Development Company, L.P. Fabrication of nanowires
US7132298B2 (en) * 2003-10-07 2006-11-07 Hewlett-Packard Development Company, L.P. Fabrication of nano-object array
WO2005045409A1 (en) * 2003-11-07 2005-05-19 Osaka Prefecture Electrical resistivity sensor and sensing method
GB0326049D0 (en) * 2003-11-07 2003-12-10 Qinetiq Ltd Fluid analysis apparatus
WO2005066360A1 (en) * 2003-12-05 2005-07-21 Northwestern University Micro/nano-fabricated glucose sensors using single-walled carbon nanotubes
KR20050055456A (en) * 2003-12-08 2005-06-13 학교법인 포항공과대학교 Biosensor using zinc oxide nanorod and preparation thereof
US20050244811A1 (en) * 2003-12-15 2005-11-03 Nano-Proprietary, Inc. Matrix array nanobiosensor
US7208094B2 (en) * 2003-12-17 2007-04-24 Hewlett-Packard Development Company, L.P. Methods of bridging lateral nanowires and device using same
JP2007515227A (en) * 2003-12-18 2007-06-14 ナノミックス・インコーポレーテッド Nano electronic capnometer adapter
EP1706742A1 (en) * 2003-12-22 2006-10-04 Koninklijke Philips Electronics N.V. Optical nanowire biosensor based on energy transfer
EP1547688A1 (en) * 2003-12-23 2005-06-29 STMicroelectronics S.r.l. Microfluidic device and method of locally concentrating electrically charged substances in a microfluidic device
FR2864109B1 (en) * 2003-12-23 2006-07-21 Commissariat Energie Atomique ORGANIZED GROWTH OF NANO-STRUCTURES
US7180174B2 (en) * 2003-12-30 2007-02-20 Intel Corporation Nanotube modified solder thermal intermediate structure, systems, and methods
US7456052B2 (en) * 2003-12-30 2008-11-25 Intel Corporation Thermal intermediate apparatus, systems, and methods
US7923109B2 (en) 2004-01-05 2011-04-12 Board Of Regents, The University Of Texas System Inorganic nanowires
DE102004001340A1 (en) * 2004-01-08 2005-08-04 Infineon Technologies Ag Method for fabricating a nanoelement field effect transistor, nanoelement field effect transistor and nanoelement arrangement
DE102004003374A1 (en) * 2004-01-22 2005-08-25 Infineon Technologies Ag Semiconductor circuit breaker as well as a suitable manufacturing process
US7553371B2 (en) * 2004-02-02 2009-06-30 Nanosys, Inc. Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production
US8025960B2 (en) * 2004-02-02 2011-09-27 Nanosys, Inc. Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production
US20110039690A1 (en) * 2004-02-02 2011-02-17 Nanosys, Inc. Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production
US7354850B2 (en) 2004-02-06 2008-04-08 Qunano Ab Directionally controlled growth of nanowhiskers
US20090227107A9 (en) * 2004-02-13 2009-09-10 President And Fellows Of Havard College Nanostructures Containing Metal Semiconductor Compounds
DE102004010635B4 (en) * 2004-03-02 2006-10-05 Micronas Gmbh Device for carrying out measurements on biocomponents
US20070190155A1 (en) * 2004-03-05 2007-08-16 Leary James F Molecular programming of nanoparticle systems for an ordered and controlled sequence of events for gene-drug delivery
KR100584188B1 (en) * 2004-03-08 2006-05-29 한국과학기술연구원 Nanowire light sensor and kit with the same
US8048377B1 (en) * 2004-03-08 2011-11-01 Hewlett-Packard Development Company, L.P. Immobilizing chemical or biological sensing molecules on semi-conducting nanowires
US7595528B2 (en) 2004-03-10 2009-09-29 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays
EP1723676A4 (en) 2004-03-10 2009-04-15 Nanosys Inc Nano-enabled memory devices and anisotropic charge carrying arrays
KR100534204B1 (en) * 2004-03-17 2005-12-07 한국과학기술연구원 Nanowire assisted laser desorption/ionization mass spectrometric analysis
US20050212531A1 (en) 2004-03-23 2005-09-29 Hewlett-Packard Development Company, L.P. Intellectual Property Administration Fluid sensor and methods
US7115971B2 (en) 2004-03-23 2006-10-03 Nanosys, Inc. Nanowire varactor diode and methods of making same
WO2005108966A1 (en) * 2004-03-23 2005-11-17 Japan Science And Technology Agency Biosensor
US7407738B2 (en) * 2004-04-02 2008-08-05 Pavel Kornilovich Fabrication and use of superlattice
JP4521482B2 (en) * 2004-04-26 2010-08-11 オリンパス株式会社 SPM cantilever and manufacturing method thereof
US20050241959A1 (en) * 2004-04-30 2005-11-03 Kenneth Ward Chemical-sensing devices
US7247531B2 (en) * 2004-04-30 2007-07-24 Hewlett-Packard Development Company, L.P. Field-effect-transistor multiplexing/demultiplexing architectures and methods of forming the same
US7785922B2 (en) 2004-04-30 2010-08-31 Nanosys, Inc. Methods for oriented growth of nanowires on patterned substrates
US7683435B2 (en) * 2004-04-30 2010-03-23 Hewlett-Packard Development Company, L.P. Misalignment-tolerant multiplexing/demultiplexing architectures
US20050279274A1 (en) 2004-04-30 2005-12-22 Chunming Niu Systems and methods for nanowire growth and manufacturing
EP1747577A2 (en) 2004-04-30 2007-01-31 Nanosys, Inc. Systems and methods for nanowire growth and harvesting
US7727820B2 (en) * 2004-04-30 2010-06-01 Hewlett-Packard Development Company, L.P. Misalignment-tolerant methods for fabricating multiplexing/demultiplexing architectures
US20090263912A1 (en) * 2004-05-13 2009-10-22 The Regents Of The University Of California Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices
CA2567156A1 (en) * 2004-05-17 2006-07-20 Cambrios Technology Corp. Biofabrication of transistors including field effect transistors
US7497133B2 (en) * 2004-05-24 2009-03-03 Drexel University All electric piezoelectric finger sensor (PEFS) for soft material stiffness measurement
US8075863B2 (en) 2004-05-26 2011-12-13 Massachusetts Institute Of Technology Methods and devices for growth and/or assembly of nanostructures
US20050265648A1 (en) * 2004-06-01 2005-12-01 Daniel Roitman Evanescent wave sensor containing nanostructures and methods of using the same
TWI406890B (en) 2004-06-08 2013-09-01 Sandisk Corp Post-deposition encapsulation of nanostructures : compositions, devices and systems incorporating same
US7968273B2 (en) * 2004-06-08 2011-06-28 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7776758B2 (en) 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8088483B1 (en) 2004-06-08 2012-01-03 Nanosys, Inc. Process for group 10 metal nanostructure synthesis and compositions made using same
CN102064102B (en) 2004-06-08 2013-10-30 桑迪士克公司 Methods and devices for forming nanostructure monolayers and devices including such monolayers
WO2006107312A1 (en) * 2004-06-15 2006-10-12 President And Fellows Of Harvard College Nanosensors
US8536661B1 (en) 2004-06-25 2013-09-17 University Of Hawaii Biosensor chip sensor protection methods
EP1766108A1 (en) 2004-06-25 2007-03-28 Btg International Limited Formation of nanowhiskers on a substrate of dissimilar material
US20050285160A1 (en) * 2004-06-28 2005-12-29 Chang Peter L Methods for forming semiconductor wires and resulting devices
CA2572798A1 (en) * 2004-07-07 2006-07-27 Nanosys, Inc. Systems and methods for harvesting and integrating nanowires
US7194912B2 (en) 2004-07-13 2007-03-27 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Carbon nanotube-based sensor and method for continually sensing changes in a structure
FR2873492B1 (en) * 2004-07-21 2006-11-24 Commissariat Energie Atomique PHOTOACTIVE NANOCOMPOSITE AND METHOD OF MANUFACTURING THE SAME
US8765488B2 (en) * 2004-07-22 2014-07-01 The Board Of Trustees Of The University Of Illinois Sensors employing single-walled carbon nanotubes
US20060024814A1 (en) * 2004-07-29 2006-02-02 Peters Kevin F Aptamer-functionalized electrochemical sensors and methods of fabricating and using the same
WO2006024023A2 (en) * 2004-08-24 2006-03-02 Nanomix, Inc. Nanotube sensor devices for dna detection
US8558311B2 (en) 2004-09-16 2013-10-15 Nanosys, Inc. Dielectrics using substantially longitudinally oriented insulated conductive wires
US7365395B2 (en) 2004-09-16 2008-04-29 Nanosys, Inc. Artificial dielectrics using nanostructures
US8089152B2 (en) * 2004-09-16 2012-01-03 Nanosys, Inc. Continuously variable graded artificial dielectrics using nanostructures
CA2581058C (en) 2004-09-21 2012-06-26 Nantero, Inc. Resistive elements using carbon nanotubes
US20060084128A1 (en) * 2004-09-22 2006-04-20 Hongye Sun Enzyme assay with nanowire sensor
WO2007001401A2 (en) * 2004-09-30 2007-01-04 E. I. Du Pont De Nemours And Company Small molecule mediated, heterogeneous, carbon nanotube biosensing
US7638036B2 (en) 2004-09-30 2009-12-29 E. I. Du Pont De Nemours And Company Redox potential mediated carbon nanotubes biosensing in homogeneous format
US7635423B2 (en) 2004-09-30 2009-12-22 E. I. Du Pont De Nemours And Company Redox potential mediated, heterogeneous, carbon nanotube biosensing
WO2007001398A2 (en) * 2004-09-30 2007-01-04 E. I. Du Pont De Nemours And Company Small molecule mediated biosensing using carbon nanotubes in homogeneous format
EP1805823A2 (en) * 2004-10-12 2007-07-11 Nanosys, Inc. Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
KR20070045255A (en) * 2004-10-14 2007-05-02 가부시끼가이샤 도시바 Fet-based nucleic acid detecting sensor
US7473943B2 (en) * 2004-10-15 2009-01-06 Nanosys, Inc. Gate configuration for nanowire electronic devices
WO2006137926A2 (en) 2004-11-02 2006-12-28 Nantero, Inc. Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
WO2006052891A1 (en) * 2004-11-09 2006-05-18 The Regents Of The University Of California Analyte identification using electronic devices
WO2007008246A2 (en) 2004-11-12 2007-01-18 The Board Of Trustees Of The Leland Stanford Junior University Charge perturbation detection system for dna and other molecules
US7582534B2 (en) * 2004-11-18 2009-09-01 International Business Machines Corporation Chemical doping of nano-components
AU2005309906B2 (en) 2004-11-24 2010-12-09 Nanosys, Inc. Contact doping and annealing systems and processes for nanowire thin films
US7348592B2 (en) 2004-11-29 2008-03-25 The United States Of America As Represented By The Secretary Of The Navy Carbon nanotube apparatus and method of carbon nanotube modification
US7560366B1 (en) 2004-12-02 2009-07-14 Nanosys, Inc. Nanowire horizontal growth and substrate removal
US8154002B2 (en) 2004-12-06 2012-04-10 President And Fellows Of Harvard College Nanoscale wire-based data storage
CN101107737B (en) 2004-12-09 2012-03-21 奈米系统股份有限公司 Nanowire-based membrane electrode assemblies for fuel cells
US8278011B2 (en) 2004-12-09 2012-10-02 Nanosys, Inc. Nanostructured catalyst supports
US7842432B2 (en) * 2004-12-09 2010-11-30 Nanosys, Inc. Nanowire structures comprising carbon
US7939218B2 (en) * 2004-12-09 2011-05-10 Nanosys, Inc. Nanowire structures comprising carbon
WO2006065937A2 (en) 2004-12-16 2006-06-22 Nantero, Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
WO2006067276A1 (en) * 2004-12-23 2006-06-29 Nanolab Systems Oy Utilization of nanowires in chemical and biological analysis
US7235475B2 (en) * 2004-12-23 2007-06-26 Hewlett-Packard Development Company, L.P. Semiconductor nanowire fluid sensor and method for fabricating the same
JP2008525822A (en) * 2004-12-28 2008-07-17 ナノミックス・インコーポレーテッド Nanoelectronic device for DNA detection / recognition of polynucleotide sequences
KR100604229B1 (en) * 2004-12-29 2006-07-28 학교법인고려중앙학원 Fabrication method of gas sensors by using networked GaN nanowires
US7569850B2 (en) * 2005-01-24 2009-08-04 Lawrence Livermore National Security, Llc Lipid bilayers on nano-templates
US7375012B2 (en) * 2005-02-28 2008-05-20 Pavel Kornilovich Method of forming multilayer film
JPWO2006103872A1 (en) * 2005-03-28 2008-09-04 国立大学法人 北海道大学 Carbon nanotube field effect transistor
US20070238186A1 (en) * 2005-03-29 2007-10-11 Hongye Sun Nanowire-based system for analysis of nucleic acids
WO2008097261A2 (en) * 2006-07-13 2008-08-14 The Trustees Of The University Of Pennsylvania Single walled carbon nanotubes with functionally adsorbed biopolymers for use as chemical sensors
US7977054B2 (en) 2005-03-29 2011-07-12 The Trustees Of The University Of Pennsylvania Single walled carbon nanotubes functionally adsorbed to biopolymers for use as chemical sensors
CA2602259A1 (en) * 2005-03-29 2006-10-05 Arkal Medical, Inc. Devices, systems, methods and tools for continuous glucose monitoring
US20060220006A1 (en) * 2005-04-01 2006-10-05 Yong Chen Molecular-doped transistor and sensor
US9287356B2 (en) 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8941094B2 (en) 2010-09-02 2015-01-27 Nantero Inc. Methods for adjusting the conductivity range of a nanotube fabric layer
US20060246576A1 (en) * 2005-04-06 2006-11-02 Affymetrix, Inc. Fluidic system and method for processing biological microarrays in personal instrumentation
JP4742650B2 (en) * 2005-04-08 2011-08-10 東レ株式会社 Carbon nanotube composition, biosensor, and production method thereof
EP1871162B1 (en) * 2005-04-13 2014-03-12 Nanosys, Inc. Nanowire dispersion compositions and uses thereof
US8262998B2 (en) * 2005-04-15 2012-09-11 Branislav Vlahovic Detection methods and detection devices based on the quantum confinement effects
WO2006116424A2 (en) * 2005-04-26 2006-11-02 Nanosys, Inc. Paintable nanofiber coatings
US7491423B1 (en) * 2005-05-02 2009-02-17 Sandia Corporation Directed spatial organization of zinc oxide nanostructures
US7835170B2 (en) 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9196615B2 (en) 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7598127B2 (en) 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
WO2006124625A2 (en) * 2005-05-12 2006-11-23 Nanosys, Inc. Use of nanoparticles in film formation and as solder
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
JP4825968B2 (en) * 2005-05-26 2011-11-30 国立大学法人九州大学 Carbon nanotube sensor and manufacturing method thereof
US7396676B2 (en) 2005-05-31 2008-07-08 Agilent Technologies, Inc. Evanescent wave sensor with attached ligand
WO2006130359A2 (en) * 2005-06-02 2006-12-07 Nanosys, Inc. Light emitting nanowires for macroelectronics
US20060275911A1 (en) * 2005-06-03 2006-12-07 Shih-Yuan Wang Method and apparatus for moleclular analysis using nanostructure-enhanced Raman spectroscopy
US20060275779A1 (en) * 2005-06-03 2006-12-07 Zhiyong Li Method and apparatus for molecular analysis using nanowires
US7947485B2 (en) * 2005-06-03 2011-05-24 Hewlett-Packard Development Company, L.P. Method and apparatus for molecular analysis using nanoelectronic circuits
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
US7915122B2 (en) 2005-06-08 2011-03-29 Nantero, Inc. Self-aligned cell integration scheme
US7278324B2 (en) 2005-06-15 2007-10-09 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Carbon nanotube-based sensor and method for detection of crack growth in a structure
US7262991B2 (en) * 2005-06-30 2007-08-28 Intel Corporation Nanotube- and nanocrystal-based non-volatile memory
TW200712486A (en) * 2005-08-03 2007-04-01 Nano Proprietary Inc Continuous range hydrogen sensor
US7426848B1 (en) * 2005-08-05 2008-09-23 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Gas composition sensing using carbon nanotube arrays
WO2007024702A2 (en) * 2005-08-19 2007-03-01 Bioquantix Corporation Active control of epileptic seizures and diagnosis based on critical systems-like behavior
US8268405B2 (en) 2005-08-23 2012-09-18 Uwm Research Foundation, Inc. Controlled decoration of carbon nanotubes with aerosol nanoparticles
US8240190B2 (en) * 2005-08-23 2012-08-14 Uwm Research Foundation, Inc. Ambient-temperature gas sensor
KR100691276B1 (en) * 2005-08-25 2007-03-12 삼성전기주식회사 Nanowire light emitting device and method of fabricating the same
KR100647699B1 (en) * 2005-08-30 2006-11-23 삼성에스디아이 주식회사 Nano semiconductor sheet, manufacturing method of the nano semiconductor sheet, manufacturing method of tft using the nano semiconductor sheet, manufacturing method of flat panel display using the nano semiconductor sheet, thin film transistor, and flat panel display device
WO2007030483A2 (en) 2005-09-06 2007-03-15 Nantero, Inc. Method and system of using nanotube fabrics as joule heating elements for memories and other applications
WO2008054364A2 (en) 2005-09-06 2008-05-08 Nantero, Inc. Carbon nanotubes for the selective transfer of heat from electronics
JP2009509158A (en) * 2005-09-22 2009-03-05 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Luminescence sensor comprising at least two wire grids
JP2009513368A (en) * 2005-09-23 2009-04-02 ナノシス・インコーポレイテッド Method for doping nanostructures
WO2008136787A2 (en) * 2005-10-24 2008-11-13 Western Michigan University Research Foundation Integrated sensor microsystem comprising a carbon nanotube sensor and method for detecting biomolecules in liquid with said system
US20070096164A1 (en) * 2005-10-31 2007-05-03 Peters Kevin F Sensing system
US7335526B2 (en) * 2005-10-31 2008-02-26 Hewlett-Packard Development Company, L.P. Sensing system
US8075852B2 (en) 2005-11-02 2011-12-13 Affymetrix, Inc. System and method for bubble removal
US20080311585A1 (en) * 2005-11-02 2008-12-18 Affymetrix, Inc. System and method for multiplex liquid handling
US20070099288A1 (en) * 2005-11-02 2007-05-03 Affymetrix, Inc. Microfluidic Methods, Devices, and Systems for Fluid Handling
US20080038714A1 (en) * 2005-11-02 2008-02-14 Affymetrix, Inc. Instrument to Pneumatically Control Lab Cards and Method Thereof
US8007267B2 (en) * 2005-11-02 2011-08-30 Affymetrix, Inc. System and method for making lab card by embossing
US7833616B2 (en) * 2005-11-16 2010-11-16 Hewlett-Packard Development Company, L.P. Self-aligning nanowires and methods thereof
CN100386264C (en) * 2005-11-18 2008-05-07 太原理工大学 Method for preparing inorganic compound gallium nitride nanowire
US20070127164A1 (en) * 2005-11-21 2007-06-07 Physical Logic Ag Nanoscale Sensor
KR101390619B1 (en) 2005-11-21 2014-04-30 나노시스, 인크. Nanowire structures comprising carbon
WO2008048313A2 (en) 2005-12-19 2008-04-24 Advanced Technology Materials, Inc. Production of carbon nanotubes
CA2624778A1 (en) * 2005-12-29 2007-11-22 Nanosys, Inc. Methods for oriented growth of nanowires on patterned substrates
US7741197B1 (en) 2005-12-29 2010-06-22 Nanosys, Inc. Systems and methods for harvesting and reducing contamination in nanowires
US20090017477A1 (en) * 2005-12-30 2009-01-15 Harri Harma Method for determination of concentration, charge or unit size of a substance
US8264137B2 (en) 2006-01-03 2012-09-11 Samsung Electronics Co., Ltd. Curing binder material for carbon nanotube electron emission cathodes
KR100704007B1 (en) 2006-01-17 2007-04-04 한국과학기술연구원 Lateral flow immunoassay kit based on chemiluminescence and chemifluorescence reaction and using method thereof
US7417119B2 (en) * 2006-01-17 2008-08-26 Sri International Nanoscale array biomolecular bond enhancer device
US7683303B2 (en) * 2006-01-17 2010-03-23 Sri International Nanoscale volumetric imaging device having at least one microscale device for electrically coupling at least one addressable array to a data processing means
US20070178507A1 (en) * 2006-01-31 2007-08-02 Wei Wu Method and apparatus for detection of molecules using nanopores
US7826336B2 (en) 2006-02-23 2010-11-02 Qunano Ab Data storage nanostructures
EP2013611A2 (en) * 2006-03-15 2009-01-14 The President and Fellows of Harvard College Nanobioelectronics
WO2007109228A1 (en) * 2006-03-17 2007-09-27 The Government Of The United States Of America, As Represented By The Secretary, Department Of Health And Human Services Apparatus for microarray binding sensors having biological probe materials using carbon nanotube transistors
US20100049021A1 (en) * 2006-03-28 2010-02-25 Jina Arvind N Devices, systems, methods and tools for continuous analyte monitoring
US20090131778A1 (en) * 2006-03-28 2009-05-21 Jina Arvind N Devices, systems, methods and tools for continuous glucose monitoring
US20080154107A1 (en) * 2006-12-20 2008-06-26 Jina Arvind N Device, systems, methods and tools for continuous glucose monitoring
KR100842886B1 (en) * 2006-04-04 2008-07-02 재단법인서울대학교산학협력재단 Biosensor having nano wire for detecting food additive mono sodium glutamate and manufacturing method thereof
US8512641B2 (en) * 2006-04-11 2013-08-20 Applied Nanotech Holdings, Inc. Modulation of step function phenomena by varying nanoparticle size
JP4989101B2 (en) * 2006-04-27 2012-08-01 独立行政法人科学技術振興機構 Method for manufacturing GeSn semiconductor device
US7924413B2 (en) * 2006-04-28 2011-04-12 Hewlett-Packard Development Company, L.P. Nanowire-based photonic devices
US8679630B2 (en) * 2006-05-17 2014-03-25 Purdue Research Foundation Vertical carbon nanotube device in nanoporous templates
CA2655340C (en) 2006-06-12 2016-10-25 President And Fellows Of Harvard College Nanosensors and related technologies
US8106382B2 (en) * 2006-06-21 2012-01-31 Panasonic Corporation Field effect transistor
US20100248209A1 (en) * 2006-06-30 2010-09-30 Suman Datta Three-dimensional integrated circuit for analyte detection
KR100777973B1 (en) * 2006-07-13 2007-11-29 한국표준과학연구원 Biosensor comprising interdigitated electrode sensor units
TW200806829A (en) * 2006-07-20 2008-02-01 Univ Nat Central Method for producing single crystal gallium nitride substrate
US8072226B2 (en) * 2006-08-07 2011-12-06 Snu R&Db Foundation Nanostructure sensors
US8236595B2 (en) * 2006-08-11 2012-08-07 Agency For Science, Technology And Research Nanowire sensor, nanowire sensor array and method of fabricating the same
US8278216B1 (en) 2006-08-18 2012-10-02 Novellus Systems, Inc. Selective capping of copper
US20080058726A1 (en) * 2006-08-30 2008-03-06 Arvind Jina Methods and Apparatus Incorporating a Surface Penetration Device
WO2008097275A2 (en) * 2006-08-30 2008-08-14 Molecular Nanosystems, Inc. Methods for forming freestanding nanotube objects and objects so formed
US8323789B2 (en) 2006-08-31 2012-12-04 Cambridge Enterprise Limited Nanomaterial polymer compositions and uses thereof
US20100002324A1 (en) * 2006-08-31 2010-01-07 Cambridge Enterprise Limited Optical Nanomaterial Compositions
US20090066348A1 (en) * 2006-09-06 2009-03-12 Young Shik Shin Apparatus and method for quantitative determination of target molecules
WO2008030395A1 (en) * 2006-09-07 2008-03-13 California Institute Of Technology Apparatus and method for quantitative determination of target molecules
WO2008033303A2 (en) 2006-09-11 2008-03-20 President And Fellows Of Harvard College Branched nanoscale wires
US8174084B2 (en) * 2006-09-19 2012-05-08 Intel Corporation Stress sensor for in-situ measurement of package-induced stress in semiconductor devices
EP2069773A2 (en) * 2006-09-22 2009-06-17 Koninklijke Philips Electronics N.V. Semiconductor sensor device, diagnostic instrument comprising such a device and method of manufacturing such a device
KR100758285B1 (en) * 2006-09-27 2007-09-12 한국전자통신연구원 A bio sensor, method for manufacturing the same and a bio sensing apparatus with the same
JP5023326B2 (en) * 2006-09-28 2012-09-12 国立大学法人北海道大学 Detection apparatus and detection method
US8257676B2 (en) * 2006-10-03 2012-09-04 Sandia Corporation Method for synthesizing carbon nanotubes
US8591952B2 (en) 2006-10-10 2013-11-26 Massachusetts Institute Of Technology Absorbant superhydrophobic materials, and methods of preparation and use thereof
US7592679B1 (en) * 2006-10-19 2009-09-22 Hewlett-Packard Development Company, L.P. Sensor and method for making the same
US7388200B2 (en) * 2006-10-19 2008-06-17 Hewlett-Packard Development Company, L.P. Sensing method and nanosensing device for performing the same
US8384136B2 (en) * 2006-10-19 2013-02-26 Hewlett-Packard Development Company, L.P. Demultiplexed nanowire sensor array for detection of chemical and biological species
EP3564674B1 (en) 2006-11-01 2021-08-25 Ventana Medical Systems, Inc. Haptens, hapten conjugates, compositions thereof and method for their preparation and use
EP2082419A4 (en) * 2006-11-07 2014-06-11 Systems and methods for nanowire growth
WO2008060455A2 (en) 2006-11-09 2008-05-22 Nanosys, Inc. Methods for nanowire alignment and deposition
WO2008063901A1 (en) * 2006-11-17 2008-05-29 Trustees Of Boston University Nanochannel-based sensor system for use in detecting chemical or biological species
US8575663B2 (en) 2006-11-22 2013-11-05 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
US8481335B2 (en) * 2006-11-27 2013-07-09 Drexel University Specificity and sensitivity enhancement in cantilever sensing
WO2009046251A2 (en) * 2007-10-05 2009-04-09 Drexel University Specificity and sensitivity enhancement in piezoelectric cantilever sensing
US7992431B2 (en) 2006-11-28 2011-08-09 Drexel University Piezoelectric microcantilevers and uses in atomic force microscopy
US8927259B2 (en) * 2006-11-28 2015-01-06 Drexel University Piezoelectric microcantilever sensors for biosensing
US7786024B2 (en) * 2006-11-29 2010-08-31 Nanosys, Inc. Selective processing of semiconductor nanowires by polarized visible radiation
US7631697B2 (en) * 2006-11-29 2009-12-15 Schlumberger Technology Corporation Oilfield apparatus comprising swellable elastomers having nanosensors therein and methods of using same in oilfield application
US8349167B2 (en) 2006-12-14 2013-01-08 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
GB2457851B (en) 2006-12-14 2011-01-05 Ion Torrent Systems Inc Methods and apparatus for measuring analytes using large scale fet arrays
US8262900B2 (en) 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US7847341B2 (en) 2006-12-20 2010-12-07 Nanosys, Inc. Electron blocking layers for electronic devices
US20080150009A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
US20080150003A1 (en) * 2006-12-20 2008-06-26 Jian Chen Electron blocking layers for electronic devices
US20080150004A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
US8686490B2 (en) 2006-12-20 2014-04-01 Sandisk Corporation Electron blocking layers for electronic devices
US8049203B2 (en) 2006-12-22 2011-11-01 Qunano Ab Nanoelectronic structure and method of producing such
US8183587B2 (en) 2006-12-22 2012-05-22 Qunano Ab LED with upstanding nanowire structure and method of producing such
WO2008079078A1 (en) 2006-12-22 2008-07-03 Qunano Ab Elevated led and method of producing such
CN102255018B (en) 2006-12-22 2013-06-19 昆南诺股份有限公司 Nanostructured LED array with collimating reflectors and manufacture method thereof
US9806273B2 (en) * 2007-01-03 2017-10-31 The United States Of America As Represented By The Secretary Of The Army Field effect transistor array using single wall carbon nano-tubes
US7544591B2 (en) * 2007-01-18 2009-06-09 Hewlett-Packard Development Company, L.P. Method of creating isolated electrodes in a nanowire-based device
CA2677196A1 (en) * 2007-02-01 2008-09-12 Drexel University A hand-held phase-shift detector for sensor applications
US9487877B2 (en) * 2007-02-01 2016-11-08 Purdue Research Foundation Contact metallization of carbon nanotubes
WO2008099345A1 (en) * 2007-02-16 2008-08-21 Koninklijke Philips Electronics N. V. Use of nanowires for in vivo analysis of cells
US7838809B2 (en) 2007-02-17 2010-11-23 Ludwig Lester F Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials
JP2008209249A (en) * 2007-02-27 2008-09-11 National Institutes Of Natural Sciences Oxygen gas detection element, and nanowire for oxygen gas detection element
WO2008112764A1 (en) 2007-03-12 2008-09-18 Nantero, Inc. Electromagnetic and thermal sensors using carbon nanotubes and methods of making same
JP4530034B2 (en) * 2007-03-30 2010-08-25 株式会社イデアルスター Gas sensor, gas detection module therefor, and gas measurement system using them
WO2008134363A1 (en) * 2007-04-25 2008-11-06 The Regents Of The University Of Michigan Tunable elastomeric nanochannels for nanofluidic manipulation
US7682789B2 (en) * 2007-05-04 2010-03-23 Ventana Medical Systems, Inc. Method for quantifying biomolecules conjugated to a nanoparticle
US7892610B2 (en) * 2007-05-07 2011-02-22 Nanosys, Inc. Method and system for printing aligned nanowires and other electrical devices
TWI461350B (en) 2007-05-22 2014-11-21 Nantero Inc Triodes using nanofabric articles and methods of making the same
CA2687178C (en) 2007-05-23 2014-02-04 Ventana Medical Systems, Inc. Polymeric carriers for immunohistochemistry and in situ hybridization
EP2160612A4 (en) * 2007-05-23 2016-04-27 Univ Arizona Systems and methods for integrated electrochemical and electrical detection
US8197650B2 (en) 2007-06-07 2012-06-12 Sensor Innovations, Inc. Silicon electrochemical sensors
EP2174122A2 (en) * 2007-06-08 2010-04-14 Bharath R Takulapalli Nano structured field effect sensor and methods of forming and using same
US8198658B2 (en) * 2007-06-13 2012-06-12 Samsung Electronics Co., Ltd. Device and method for detecting biomolecules using adsorptive medium and field effect transistor
US7663202B2 (en) * 2007-06-26 2010-02-16 Hewlett-Packard Development Company, L.P. Nanowire photodiodes and methods of making nanowire photodiodes
US7994640B1 (en) * 2007-07-02 2011-08-09 Novellus Systems, Inc. Nanoparticle cap layer
US8039379B1 (en) 2007-07-02 2011-10-18 Novellus Systems, Inc. Nanoparticle cap layer
US7709298B2 (en) 2007-07-18 2010-05-04 Hewlett-Packard Development Company, L.P. Selectively altering a predetermined portion or an external member in contact with the predetermined portion
US10011481B2 (en) * 2007-07-24 2018-07-03 Technion Research And Development Foundation Ltd. Chemically sensitive field effect transistors and uses thereof in electronic nose devices
US7991480B2 (en) * 2007-08-28 2011-08-02 Cardiac Pacemakers, Inc. Medical device electrodes having cells disposed on nanostructures
US7894914B2 (en) * 2007-08-28 2011-02-22 Cardiac Pacemakers, Inc. Medical device electrodes including nanostructures
US7778512B2 (en) * 2007-08-28 2010-08-17 Scenterra, Inc. Light-pipe array system
US7759063B2 (en) * 2007-08-29 2010-07-20 International Business Machines Corporation DNA-based functionalization of single walled carbon nanotubes for directed assembly
US8698481B2 (en) 2007-09-12 2014-04-15 President And Fellows Of Harvard College High-resolution molecular sensor
US7501636B1 (en) 2007-09-20 2009-03-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Nanotunneling junction-based hyperspectal polarimetric photodetector and detection method
US20100260745A1 (en) * 2007-10-01 2010-10-14 University Of Southern California Methods of using and constructing nanosensor platforms
KR101465961B1 (en) * 2007-10-09 2014-12-01 삼성전자주식회사 A method and a device for detecting DNAs, etc.
US20090099427A1 (en) * 2007-10-12 2009-04-16 Arkal Medical, Inc. Microneedle array with diverse needle configurations
DE102007054691A1 (en) * 2007-11-14 2009-05-20 Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh Use of nanostructured surfaces and methods for enriching or isolating cellular subpopulations
WO2009079154A2 (en) 2007-11-23 2009-06-25 Drexel University Lead-free piezoelectric ceramic films and a method for making thereof
US8940521B2 (en) * 2007-11-29 2015-01-27 General Electric Company Composite detection devices having in-line desalting and methods of making the same
US9409769B2 (en) 2007-11-30 2016-08-09 General Electric Company Nanostructured devices for detecting and analyzing biomolecules
KR100906154B1 (en) * 2007-12-05 2009-07-03 한국전자통신연구원 Semiconductor nanowire sensor device and method for manufacturing the same
US8319002B2 (en) 2007-12-06 2012-11-27 Nanosys, Inc. Nanostructure-enhanced platelet binding and hemostatic structures
JP5519524B2 (en) 2007-12-06 2014-06-11 ナノシス・インク. Absorbable nano-reinforced hemostatic structure and bandage material
KR101058369B1 (en) * 2007-12-10 2011-08-22 한국전자통신연구원 Biosensor using nano dot and its manufacturing method
SG153674A1 (en) * 2007-12-11 2009-07-29 Nanyang Polytechnic A method of doping and apparatus for doping
KR100940524B1 (en) 2007-12-13 2010-02-10 한국전자통신연구원 High sensitive FET sensor and fabrication method for the FET sensor
KR20090065124A (en) * 2007-12-17 2009-06-22 한국전자통신연구원 The bio-sensor using siliconnano-wire and manufacturing method thereof
KR100969478B1 (en) * 2008-01-07 2010-07-14 고려대학교 산학협력단 Method of fabricating the nanodevice using PDMS
US7786466B2 (en) * 2008-01-11 2010-08-31 International Business Machines Corporation Carbon nanotube based integrated semiconductor circuit
US8361297B2 (en) * 2008-01-11 2013-01-29 The Penn State Research Foundation Bottom-up assembly of structures on a substrate
KR100958307B1 (en) * 2008-01-30 2010-05-19 한국과학기술연구원 Bio-sensors including nanochannel integrated 3-demensional metallic nanowire gap electrodes, manufacturing method thereof, and bio-disk system comprising siad bio-sensors
US20110177493A1 (en) * 2008-02-15 2011-07-21 The Regents Of The University Of California Using highly sensitive suspended carbon nanotubes for molecular-level sensing based on optical detection
IL189576A0 (en) * 2008-02-18 2008-12-29 Technion Res & Dev Foundation Chemically sensitive field effect transistors for explosive detection
US8741663B2 (en) 2008-03-11 2014-06-03 Drexel University Enhanced detection sensitivity with piezoelectric sensors
US8961757B2 (en) * 2008-03-18 2015-02-24 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University Nanopore and carbon nanotube based DNA sequencer
US8628649B2 (en) * 2008-03-18 2014-01-14 Arizona Board Of Regents Acting For And On Behalf Of Arizona State University Nanopore and carbon nanotube based DNA sequencer and a serial recognition sequencer
WO2009124111A2 (en) * 2008-04-01 2009-10-08 Trustees Of Boston University Glucose sensor employing semiconductor nanoelectronic device
US8232544B2 (en) * 2008-04-04 2012-07-31 Nokia Corporation Nanowire
JP5129011B2 (en) * 2008-04-24 2013-01-23 シャープ株式会社 Sensor element, analysis chip, and analysis device using nanostructures
KR101110805B1 (en) * 2008-05-07 2012-02-24 재단법인서울대학교산학협력재단 Olfactory receptor-functionalized transistors for highly selective bioelectronic nose and biosensor using the same
CN101582450B (en) * 2008-05-16 2012-03-28 清华大学 Thin film transistor
US8562546B2 (en) 2008-05-16 2013-10-22 Drexel University System and method for evaluating tissue
WO2009144725A1 (en) * 2008-05-29 2009-12-03 Technion Research And Development Foundation Ltd. Carbon nanotube structures in sensor apparatuses for analyzing biomarkers in breath samples
US8703490B2 (en) 2008-06-05 2014-04-22 Ventana Medical Systems, Inc. Compositions comprising nanomaterials and method for using such compositions for histochemical processes
KR100991011B1 (en) 2008-06-10 2010-10-29 한국화학연구원 Biosensor comprising metal immobilized carbon nanotube and a preparing method thereof
WO2009155359A1 (en) 2008-06-20 2009-12-23 Nantero, Inc. Nram arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same
EP2982437B1 (en) 2008-06-25 2017-12-06 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale fet arrays
GB2461127B (en) * 2008-06-25 2010-07-14 Ion Torrent Systems Inc Methods and apparatus for measuring analytes using large scale FET arrays
US8093667B2 (en) * 2008-06-30 2012-01-10 Intel Corporation Flexible gate electrode device for bio-sensing
US10670559B2 (en) * 2008-07-11 2020-06-02 Cornell University Nanofluidic channels with integrated charge sensors and methods based thereon
US8222127B2 (en) * 2008-07-18 2012-07-17 Micron Technology, Inc. Methods of forming structures having nanotubes extending between opposing electrodes and structures including same
US20100053624A1 (en) * 2008-08-29 2010-03-04 Kyung-Hwa Yoo Biosensor
EP2329039B1 (en) 2008-09-03 2016-05-11 Quantumdx Group Limited Sensing strategies and methods for nucleic acid detection using biosensors
FR2936604B1 (en) * 2008-09-29 2010-11-05 Commissariat Energie Atomique CARBON NANOTUBE CHEMICAL SENSORS, PROCESS FOR PREPARATION AND USES
WO2010037085A1 (en) * 2008-09-29 2010-04-01 The Board Of Trustees Of The University Of Illinois Dna sequencing and amplification systems using nanoscale field effect sensor arrays
US9919922B2 (en) 2008-10-02 2018-03-20 Saion Kumar Sinha Bionanosensor detection device
WO2010042514A1 (en) 2008-10-06 2010-04-15 Arizona Board Of Regents Nanopore and carbon nanotube based dna sequencer and a serial recognition elements
US7880163B2 (en) * 2008-10-06 2011-02-01 Imec Nanostructure insulated junction field effect transistor
KR100980738B1 (en) * 2008-10-10 2010-09-08 한국전자통신연구원 Method of manufacturing semiconductor nanowire sensor devices and semiconductor nanowire sensor devices manufactured by the method
JP5149997B2 (en) * 2008-10-20 2013-02-20 ヒューレット−パッカード デベロップメント カンパニー エル.ピー. Nanowire bolometer photodetector
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
WO2010048407A1 (en) 2008-10-24 2010-04-29 Nanosys, Inc. Electrochemical catalysts for fuel cells
US20100108132A1 (en) * 2008-10-30 2010-05-06 General Electric Company Nano-devices and methods of manufacture thereof
US20100204062A1 (en) * 2008-11-07 2010-08-12 University Of Southern California Calibration methods for multiplexed sensor arrays
US8614466B2 (en) * 2008-11-18 2013-12-24 The United States Of America, As Represented By The Secretary, Department Of Health And Human Services Semiconductor for measuring biological interactions
US7915637B2 (en) 2008-11-19 2011-03-29 Nantero, Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
US7940381B2 (en) * 2008-11-26 2011-05-10 International Business Machines Corporation Semiconductor nanowire electromagnetic radiation sensor
US8039909B2 (en) * 2008-11-26 2011-10-18 International Business Machines Corporation Semiconductor nanowires charge sensor
US8169006B2 (en) * 2008-11-29 2012-05-01 Electronics And Telecommunications Research Institute Bio-sensor chip for detecting target material
JP4843077B2 (en) * 2008-12-03 2011-12-21 韓國電子通信研究院 Biosensor with transistor structure and manufacturing method thereof
KR101136881B1 (en) 2008-12-03 2012-04-20 한국전자통신연구원 Biosensor Having Transistor Structure and Method for Fabricating the Same
US8481324B2 (en) 2008-12-04 2013-07-09 Technion Research And Development Foundation Ltd. Apparatus and methods for diagnosing renal disorders
US8323466B2 (en) * 2008-12-05 2012-12-04 Nanoivd, Inc. Microfluidic-based lab-on-a-test card for a point-of-care analyzer
US20100143887A1 (en) * 2008-12-05 2010-06-10 Electronics And Telecommunications Research Institute Biosensor and method for detecting biomolecules by using the biosensor
WO2010077622A1 (en) * 2008-12-08 2010-07-08 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
DE102008060992A1 (en) * 2008-12-08 2010-06-17 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Sorting of biological samples at nanostructured interfaces
KR101539669B1 (en) * 2008-12-16 2015-07-27 삼성전자주식회사 Method of forming core-shell type structure and method of manufacturing transistor using the same
US20100159572A1 (en) * 2008-12-22 2010-06-24 General Electric Company Device and associated method
US7981772B2 (en) * 2008-12-29 2011-07-19 International Business Machines Corporation Methods of fabricating nanostructures
US8715981B2 (en) * 2009-01-27 2014-05-06 Purdue Research Foundation Electrochemical biosensor
US7884004B2 (en) * 2009-02-04 2011-02-08 International Business Machines Corporation Maskless process for suspending and thinning nanowires
US9958442B2 (en) 2009-02-11 2018-05-01 Duke University Sensors incorporating antibodies and methods of making and using the same
US8148264B2 (en) * 2009-02-25 2012-04-03 California Institue Of Technology Methods for fabrication of high aspect ratio micropillars and nanopillars
TWI394948B (en) 2009-03-17 2013-05-01 Univ Nat Chiao Tung Label-free sensor
FR2943421B1 (en) 2009-03-18 2012-11-30 Commissariat Energie Atomique ELECTRICAL DETECTION AND QUANTIFICATION OF MERCURIC DERIVATIVES
WO2010115143A1 (en) * 2009-04-03 2010-10-07 University Of Southern California Surface modification of nanosensor platforms to increase sensitivity and reproducibility
US8872154B2 (en) * 2009-04-06 2014-10-28 Purdue Research Foundation Field effect transistor fabrication from carbon nanotubes
WO2010120297A1 (en) * 2009-04-15 2010-10-21 Hewlett-Packard Development Company, L.P Nanowire sensor having a nanowire and electrically conductive film
JP5686988B2 (en) 2009-05-04 2015-03-18 シャープ株式会社 Catalyst layer used for membrane electrode assembly for fuel cell, membrane electrode assembly for fuel cell using the same, fuel cell, and production method thereof
HUE059099T2 (en) * 2009-05-19 2022-10-28 Oned Mat Inc Nanostructured materials for battery applications
US20120135158A1 (en) 2009-05-26 2012-05-31 Sharp Kabushiki Kaisha Methods and systems for electric field deposition of nanowires and other devices
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
US8673627B2 (en) 2009-05-29 2014-03-18 Life Technologies Corporation Apparatus and methods for performing electrochemical reactions
JP5299105B2 (en) * 2009-06-16 2013-09-25 ソニー株式会社 Vanadium dioxide nanowire and method for producing the same, and nanowire device using vanadium dioxide nanowire
US8623288B1 (en) 2009-06-29 2014-01-07 Nanosys, Inc. Apparatus and methods for high density nanowire growth
WO2011017077A2 (en) * 2009-07-27 2011-02-10 Trustees Of Boston University Nanochannel-based sensor system with controlled sensitivity
KR101269173B1 (en) 2009-09-08 2013-05-29 연세대학교 산학협력단 Method and apparatus detecting virus and bacteria
JP6076738B2 (en) * 2009-09-11 2017-02-08 ジェイピー ラボラトリーズ インコーポレイテッド Monitoring device and method based on deformation, destruction and transformation of nanostructures
FR2950436B1 (en) 2009-09-18 2013-09-20 Commissariat Energie Atomique APPARATUS AND METHOD FOR DETECTING AND / OR QUANTIFYING COMPOUNDS OF INTEREST PRESENT IN GAS FORM OR SOLUTION IN SOLVENT
US9376713B2 (en) * 2009-09-23 2016-06-28 The Board Of Trustees Of The University Of Illinois Label free detection of nucleic acid amplification
US9297796B2 (en) 2009-09-24 2016-03-29 President And Fellows Of Harvard College Bent nanowires and related probing of species
US20110086368A1 (en) * 2009-10-08 2011-04-14 Drexel University Method for immune response detection
US8722427B2 (en) * 2009-10-08 2014-05-13 Drexel University Determination of dissociation constants using piezoelectric microcantilevers
US8551806B2 (en) 2009-10-23 2013-10-08 Nantero Inc. Methods for passivating a carbonic nanolayer
US8351239B2 (en) 2009-10-23 2013-01-08 Nantero Inc. Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
US8895950B2 (en) 2009-10-23 2014-11-25 Nantero Inc. Methods for passivating a carbonic nanolayer
US8614492B2 (en) 2009-10-26 2013-12-24 International Business Machines Corporation Nanowire stress sensors, stress sensor integrated circuits, and design structures for a stress sensor integrated circuit
KR101447788B1 (en) 2009-11-05 2014-10-06 카케 에듀케이셔널 인스티튜션 Gas sensitive material comprising microcrystalline selenium and gas sensor using same
EP2498763A4 (en) 2009-11-09 2015-10-07 Spotlight Technology Partners Llc Polysaccharide based hydrogels
AU2010314994B2 (en) 2009-11-09 2016-10-06 Spotlight Technology Partners Llc Fragmented hydrogels
EP2502264A4 (en) 2009-11-19 2015-09-16 California Inst Of Techn Methods for fabricating self-aligning arrangements on semiconductors
US9018684B2 (en) * 2009-11-23 2015-04-28 California Institute Of Technology Chemical sensing and/or measuring devices and methods
KR101283685B1 (en) * 2009-11-23 2013-07-08 한국전자통신연구원 Environment Gas Sensor and Method for Preparing the Same
US8008146B2 (en) * 2009-12-04 2011-08-30 International Business Machines Corporation Different thickness oxide silicon nanowire field effect transistors
US20120028820A1 (en) 2009-12-29 2012-02-02 Nanosense Inc. Hybrid sensor array
CN102834418B (en) 2010-02-12 2016-09-28 南泰若股份有限公司 For the method controlling density, porosity and/or gap length in nanotube fabric layer and film
USPP22463P3 (en) * 2010-02-16 2012-01-17 Menachem Bornstein Gypsophila plant named ‘Pearl Blossom’
US9121823B2 (en) * 2010-02-19 2015-09-01 The Trustees Of The University Of Pennsylvania High-resolution analysis devices and related methods
US10661304B2 (en) 2010-03-30 2020-05-26 Nantero, Inc. Microfluidic control surfaces using ordered nanotube fabrics
WO2011123560A1 (en) 2010-03-30 2011-10-06 Nantero, Inc. Methods for arranging nanoscopic elements within networks, fabrics, and films
MX345837B (en) 2010-04-28 2017-02-16 Kimberly-Clark Worldwide Incorporated Device for delivery of rheumatoid arthritis medication.
JP5868953B2 (en) 2010-04-28 2016-02-24 キンバリー クラーク ワールドワイド インコーポレイテッド Injection mold microneedle array and manufacturing method thereof
CA2796965C (en) 2010-04-28 2019-04-16 Kimberly-Clark Worldwide, Inc. Method for increasing permeability of an epithelial barrier
WO2011135531A2 (en) 2010-04-28 2011-11-03 Kimberly-Clark Worldwide, Inc. MEDICAL DEVICES FOR DELIVERY OF siRNA
US8519479B2 (en) 2010-05-12 2013-08-27 International Business Machines Corporation Generation of multiple diameter nanowire field effect transistors
US8445337B2 (en) 2010-05-12 2013-05-21 International Business Machines Corporation Generation of multiple diameter nanowire field effect transistors
US8420455B2 (en) 2010-05-12 2013-04-16 International Business Machines Corporation Generation of multiple diameter nanowire field effect transistors
CN106000393B (en) 2010-05-24 2019-11-19 希路瑞亚技术公司 Nano-wire catalyst
IL206241A0 (en) * 2010-06-08 2010-12-30 Fernando Patolsky Modified nanowires for use in detecting nitro - containing chemicals
KR101237052B1 (en) * 2010-06-09 2013-02-25 성균관대학교산학협력단 Graphene cell stimulator and preparing method thereof
US9612240B2 (en) 2010-06-29 2017-04-04 The Trustees Of The University Of Pennsylvania Biomimetic chemical sensors using nanoelectronic readout of olfactory receptors
TWI547688B (en) 2010-06-30 2016-09-01 生命技術公司 Ion-sensing charge-accumulation circuits and methods
US8823380B2 (en) 2010-06-30 2014-09-02 Life Technologies Corporation Capacitive charge pump
TWI539172B (en) 2010-06-30 2016-06-21 生命技術公司 Methods and apparatus for testing isfet arrays
FR2962052B1 (en) * 2010-07-02 2015-04-03 Commissariat Energie Atomique MATERIAL COMPRISING NANOTUBES OR NANOWILS GRAFTED IN A MATRIX, PROCESS FOR PREPARATION AND USES
CN103168341B (en) 2010-07-03 2016-10-05 生命科技公司 There is the chemosensitive sensor of lightly doped discharger
KR20120010513A (en) 2010-07-26 2012-02-03 삼성전자주식회사 Bio material receiving device and methods of manufacturing and operating the same
US9000783B2 (en) 2010-08-02 2015-04-07 Wafertech, Llc Solid state sensor for metal ion detection and trapping in solution
KR101663183B1 (en) 2010-08-26 2016-10-06 삼성전자주식회사 Thermoelectric materials, and thermoelectric module and thermoelectric device comprising same
US9618475B2 (en) 2010-09-15 2017-04-11 Life Technologies Corporation Methods and apparatus for measuring analytes
US8580099B2 (en) * 2010-09-20 2013-11-12 University Of South Carolina InN nanowire based multifunctional nanocantilever sensors
US8796036B2 (en) 2010-09-24 2014-08-05 Life Technologies Corporation Method and system for delta double sampling
US20120097521A1 (en) * 2010-10-25 2012-04-26 University Of Massachusetts Nanostructured apparatus and methods for producing carbon-containing molecules as a renewable energy resource
JP5294339B2 (en) * 2010-10-25 2013-09-18 独立行政法人科学技術振興機構 Method for detecting a substance to be detected in a sample
JP5401636B2 (en) * 2010-10-25 2014-01-29 独立行政法人科学技術振興機構 Method for detecting a substance to be detected in a sample
US9103762B2 (en) 2010-10-28 2015-08-11 Eth Zurich Method for electrical detection of biomolecules by metal dissolution and Assay kit therefore
DE102010062224A1 (en) * 2010-11-30 2012-05-31 Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik GmbH + Co. KG Measurement device for determining concentration of hydrogen ion in measuring liquid, has sensor structure with electrical insulative substrate, on which source and drain terminals are provided and connected to network of carbon nanotubes
EP2646812A4 (en) * 2010-12-03 2015-01-21 Univ California Nanowire field-effect transistor biosensor with improved sensitivity
GB2500550A (en) 2010-12-16 2013-09-25 Sensor Innovations Inc Electrochemical sensors
US8518736B2 (en) * 2010-12-29 2013-08-27 Georgia Tech Research Corporation Growth and transfer of monolithic horizontal nanowire superstructures onto flexible substrates
US8450131B2 (en) 2011-01-11 2013-05-28 Nanohmics, Inc. Imprinted semiconductor multiplex detection array
EP2681542B1 (en) * 2011-03-04 2019-12-18 The Regents of The University of California Nanopore device for reversible ion and molecule sensing or migration
US20140162247A1 (en) * 2011-03-09 2014-06-12 Stuart Lindsay Molecular transistor
BR112013030226A2 (en) 2011-05-24 2022-05-10 Siluria Technologies Inc Catalysts for the oxidative coupling of methane
JP5462219B2 (en) * 2011-05-25 2014-04-02 株式会社日立製作所 Graphene sensor, substance species analyzer using the sensor, and substance species detection method using the sensor
WO2012170630A2 (en) * 2011-06-10 2012-12-13 President And Fellows Of Harvard College Nanoscale wires, nanoscale wire fet devices, and nanotube-electronic hybrid devices for sensing and other applications
WO2013033359A1 (en) 2011-08-31 2013-03-07 The Trustees Of The University Of Pennsylvania Carbon nanotube biosensors and related methods
WO2013036377A1 (en) * 2011-09-08 2013-03-14 The Regents Of The University Of California Sensor for law force-noise detection in liquids
JP5699254B2 (en) * 2011-09-13 2015-04-08 エンパイア テクノロジー ディベロップメント エルエルシー Nano-adsorbents and methods for their use
KR101464028B1 (en) * 2011-09-20 2014-12-04 주식회사 세라젬메디시스 Module type biosensor
US20170246439A9 (en) 2011-10-27 2017-08-31 Kimberly-Clark Worldwide, Inc. Increased Bioavailability of Transdermally Delivered Agents
EP2771059B1 (en) 2011-10-27 2019-07-17 Sorrento Therapeutics, Inc. Transdermal delivery of high viscosity bioactive agents
KR20140079429A (en) 2011-10-27 2014-06-26 킴벌리-클라크 월드와이드, 인크. Implantable devices for delivery of bioactive agents
US20130115453A1 (en) * 2011-11-03 2013-05-09 Nanyang Technological University Hybrid nanostructure, a method for forming the hybrid nanostructure, and an electrode including a plurality of the hybrid nanostructures
US20130158322A1 (en) 2011-11-29 2013-06-20 Siluria Technologies, Inc. Polymer templated nanowire catalysts
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US20130186758A1 (en) * 2011-12-09 2013-07-25 University Of Delaware Current-carrying nanowire having a nanopore for high-sensitivity detection and analysis of biomolecules
TWI472069B (en) 2011-12-19 2015-02-01 Ind Tech Res Inst Thermoelectric composite material
US20130201316A1 (en) 2012-01-09 2013-08-08 May Patents Ltd. System and method for server based control
US8821798B2 (en) 2012-01-19 2014-09-02 Life Technologies Corporation Titanium nitride as sensing layer for microwell structure
US8747748B2 (en) 2012-01-19 2014-06-10 Life Technologies Corporation Chemical sensor with conductive cup-shaped sensor surface
KR101327762B1 (en) * 2012-01-27 2013-11-11 연세대학교 산학협력단 Neuro device having nano wire and supporting layer
US9446397B2 (en) 2012-02-03 2016-09-20 Siluria Technologies, Inc. Method for isolation of nanomaterials
US9689826B2 (en) 2012-03-11 2017-06-27 Technion Research And Development Foundation Ltd. Detection of chronic kidney disease and disease progression
KR101890703B1 (en) 2012-03-23 2018-08-22 삼성전자주식회사 Sensing apparatus using radio frequencyand manufacturing mathod thereof
US9095823B2 (en) * 2012-03-29 2015-08-04 Lockheed Martin Corporation Tunable layered membrane configuration for filtration and selective isolation and recovery devices
US9425254B1 (en) * 2012-04-04 2016-08-23 Ball Aerospace & Technologies Corp. Hybrid integrated nanotube and nanostructure substrate systems and methods
CN104769424B (en) 2012-04-09 2017-11-10 巴拉什·塔库拉帕里 Field-effect transistor, the device comprising the transistor and its formation and application method
WO2013166259A1 (en) 2012-05-03 2013-11-07 President And Fellows Of Harvard College Nanoscale sensors for intracellular and other applications
US9204821B2 (en) 2012-05-09 2015-12-08 Isense Medical Corp. Method of and apparatus for detecting upper respiratory bacterial infection from exhaled mammalian breath and colorimetric sensor array cartridge
US9835634B2 (en) 2012-05-17 2017-12-05 The Board Of Trustees Of The University Of Illinois Coupled heterogeneous devices for pH sensing
WO2013173754A1 (en) * 2012-05-17 2013-11-21 The Board Of Trustees Of The University Of Illinois Coupled heterogeneous devices for ph sensing
CA2874043C (en) 2012-05-24 2021-09-14 Siluria Technologies, Inc. Catalytic forms and formulations
US10653824B2 (en) 2012-05-25 2020-05-19 Lockheed Martin Corporation Two-dimensional materials and uses thereof
US10376845B2 (en) 2016-04-14 2019-08-13 Lockheed Martin Corporation Membranes with tunable selectivity
US10017852B2 (en) 2016-04-14 2018-07-10 Lockheed Martin Corporation Method for treating graphene sheets for large-scale transfer using free-float method
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
US20150129426A1 (en) * 2012-06-05 2015-05-14 Middle Tennessee State University Electrochemical sensing nanocomposite
CN104704357A (en) * 2012-07-30 2015-06-10 加利福尼亚大学董事会 Biomolecular detection test strip design
US20150351691A1 (en) * 2012-08-24 2015-12-10 President And Fellows Of Harvard College Nanoscale wire probes
WO2014036002A1 (en) * 2012-08-28 2014-03-06 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
JP6035087B2 (en) * 2012-09-06 2016-11-30 セイコーインスツル株式会社 Gas sensor, gas measuring device, and gas sensor manufacturing method
US9457128B2 (en) * 2012-09-07 2016-10-04 President And Fellows Of Harvard College Scaffolds comprising nanoelectronic components for cells, tissues, and other applications
US9786850B2 (en) * 2012-09-07 2017-10-10 President And Fellows Of Harvard College Methods and systems for scaffolds comprising nanoelectronic components
WO2014043341A1 (en) 2012-09-12 2014-03-20 President And Fellows Of Harvard College Nanoscale field-effect transistors for biomolecular sensors and other applications
EP2906720A4 (en) 2012-10-10 2016-06-01 Univ Arizona Systems and devices for molecule sensing and method of manufacturing thereof
MX356580B (en) 2012-10-16 2018-06-05 Koninklijke Philips Nv Wide dynamic range fluid sensor based on nanowire platform.
DE102012021933B4 (en) 2012-11-09 2015-12-31 Airbus Defence and Space GmbH Optical pH sensor
WO2014091401A2 (en) * 2012-12-10 2014-06-19 Perseus-Biomed Inc. Dynamic denervation procedures and systems for the implementation thereof
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
EP2946205A4 (en) 2013-01-20 2016-08-24 Tracense Systems Ltd Systems and methods for identifying explosives
US8962366B2 (en) 2013-01-28 2015-02-24 Life Technologies Corporation Self-aligned well structures for low-noise chemical sensors
US10049871B2 (en) 2013-02-06 2018-08-14 President And Fellows Of Harvard College Anisotropic deposition in nanoscale wires
AU2014216758A1 (en) 2013-02-14 2015-08-27 Paul Weber Systems, apparatus and methods for tissue dissection
US20140239504A1 (en) * 2013-02-28 2014-08-28 Hwei-Ling Yau Multi-layer micro-wire structure
US9592475B2 (en) 2013-03-12 2017-03-14 Lockheed Martin Corporation Method for forming perforated graphene with uniform aperture size
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
US8841217B1 (en) 2013-03-13 2014-09-23 Life Technologies Corporation Chemical sensor with protruded sensor surface
US20160003732A1 (en) * 2013-03-14 2016-01-07 Hewlett-Packard Development Company, L.P. Devices to detect a substance and methods of producing such a device
EP2969184A4 (en) 2013-03-15 2016-12-21 Siluria Technologies Inc Catalysts for petrochemical catalysis
US9116117B2 (en) 2013-03-15 2015-08-25 Life Technologies Corporation Chemical sensor with sidewall sensor surface
CN105283758B (en) 2013-03-15 2018-06-05 生命科技公司 Chemical sensor with consistent sensor surface area
EP2972280B1 (en) 2013-03-15 2021-09-29 Life Technologies Corporation Chemical sensor with consistent sensor surface areas
FR3004000B1 (en) * 2013-03-28 2016-07-15 Aledia ELECTROLUMINESCENT DEVICE WITH INTEGRATED SENSOR AND METHOD FOR CONTROLLING THE TRANSMISSION OF THE DEVICE
US9650732B2 (en) 2013-05-01 2017-05-16 Nantero Inc. Low defect nanotube application solutions and fabrics and methods for making same
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
US9572918B2 (en) 2013-06-21 2017-02-21 Lockheed Martin Corporation Graphene-based filter for isolating a substance from blood
US9435896B2 (en) * 2013-07-31 2016-09-06 Globalfoundries Inc. Radiation detector based on charged self-assembled monolayers on nanowire devices
KR101527707B1 (en) * 2013-08-21 2015-06-09 한양대학교 에리카산학협력단 Sensor for mesuring concentration of hydrogen ion and method for manufacturing the same
US10654718B2 (en) 2013-09-20 2020-05-19 Nantero, Inc. Scalable nanotube fabrics and methods for making same
US10378044B1 (en) * 2013-10-01 2019-08-13 FemtoDx Methods for increasing the molecular specificity of a nanosensor
EP2863332A1 (en) 2013-10-15 2015-04-22 One Drop Diagnostics Sàrl System and method for controlling access to analytical results of a diagnostic test assay
MX2016005273A (en) 2013-10-22 2017-01-05 Ramot At Tel-Aviv Univ Ltd Method and system for sensing.
US20220011262A1 (en) * 2013-12-03 2022-01-13 FemtoDx Debye length modulation
US20150316502A1 (en) * 2013-12-03 2015-11-05 FemtoDx Debye length modulation
US20150179738A1 (en) * 2013-12-19 2015-06-25 Sk Innovation Co., Ltd. Flexible nano structure
SG11201606287VA (en) 2014-01-31 2016-08-30 Lockheed Corp Processes for forming composite structures with a two-dimensional material using a porous, non-sacrificial supporting layer
US10336713B2 (en) 2014-02-27 2019-07-02 Arizona Board Of Regents, Acting For And On Behalf Of, Arizona State University Triazole-based reader molecules and methods for synthesizing and use thereof
US9896772B2 (en) 2014-03-13 2018-02-20 Innosense Llc Modular chemiresistive sensor
WO2015187227A2 (en) 2014-03-13 2015-12-10 Duke University Electronic platform for sensing and control of electrochemical reactions
US9956544B2 (en) 2014-05-02 2018-05-01 Siluria Technologies, Inc. Heterogeneous catalysts
WO2015171699A1 (en) 2014-05-07 2015-11-12 President And Fellows Of Harvard College Controlled growth of nanoscale wires
EP2950124A1 (en) * 2014-05-28 2015-12-02 Paul Scherrer Institut Integrated photonic nanowires-based waveguide
US9857498B2 (en) * 2014-06-05 2018-01-02 Baker Hughes Incorporated Devices and methods for detecting chemicals
US9899234B2 (en) 2014-06-30 2018-02-20 Lam Research Corporation Liner and barrier applications for subtractive metal integration
CA2973472A1 (en) 2014-09-02 2016-03-10 Lockheed Martin Corporation Hemodialysis and hemofiltration membranes based upon a two-dimensional membrane material and methods employing same
US11415546B2 (en) 2014-09-05 2022-08-16 The Trustees Of The University Of Pennsylvania Volatile organic compound-based diagnostic systems and methods
PL3194070T3 (en) 2014-09-17 2021-06-14 Lummus Technology Llc Catalysts for oxidative coupling of methane and oxidative dehydrogenation of ethane
US10352899B2 (en) * 2014-10-06 2019-07-16 ALVEO Technologies Inc. System and method for detection of silver
WO2016069831A1 (en) 2014-10-30 2016-05-06 President And Fellows Of Harvard College Nanoscale wires with tip-localized junctions
AU2015342795A1 (en) * 2014-11-07 2017-06-01 Proteosense Devices, systems, and methods for the detection of analytes
US9263260B1 (en) * 2014-12-16 2016-02-16 International Business Machines Corporation Nanowire field effect transistor with inner and outer gates
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
US9666748B2 (en) 2015-01-14 2017-05-30 International Business Machines Corporation Integrated on chip detector and zero waveguide module structure for use in DNA sequencing
US10481135B1 (en) 2015-03-13 2019-11-19 Howard University Separation devices and sensors including two dimensional materials that change properties when exposed to components separated from a sample
WO2016161246A1 (en) * 2015-04-03 2016-10-06 President And Fellows Of Harvard College Nanoscale wires with external layers for sensors and other applications
JP6511957B2 (en) * 2015-05-22 2019-05-15 富士通株式会社 Gas sensor and information processing system
US10479100B2 (en) * 2015-07-31 2019-11-19 Hewlett-Packard Development Company, L.P. Printer with an air pressurization system and method of building up air pressure in a printing fluid supplier
JP2018528144A (en) 2015-08-05 2018-09-27 ロッキード・マーチン・コーポレーション Perforable sheet of graphene-based material
AU2016303049A1 (en) 2015-08-06 2018-03-01 Lockheed Martin Corporation Nanoparticle modification and perforation of graphene
US9972649B2 (en) 2015-10-21 2018-05-15 Massachusetts Institute Of Technology Nanowire FET imaging system and related techniques
TWI579559B (en) 2015-10-30 2017-04-21 財團法人工業技術研究院 Sensor device and method of manufacturing the same
US20180333086A1 (en) * 2015-11-11 2018-11-22 Elenza, Inc. Calcium sensor and implant
KR101742073B1 (en) * 2015-12-01 2017-06-01 주식회사 페타룩스 Electronic device based on copper halide semiconductor, and memory device and logic device having the same
US10386365B2 (en) 2015-12-07 2019-08-20 Nanohmics, Inc. Methods for detecting and quantifying analytes using ionic species diffusion
US10386351B2 (en) 2015-12-07 2019-08-20 Nanohmics, Inc. Methods for detecting and quantifying analytes using gas species diffusion
RU2018124345A (en) 2015-12-09 2020-01-09 Рамот Ат Тель-Авив Юниверсити Лтд. METHOD AND SYSTEM FOR TOUCH DETECTION
JP6758620B2 (en) * 2016-03-09 2020-09-23 国立大学法人東海国立大学機構 Nanowire device, analyzer containing the nanowire device, sample heat treatment method and sample separation method
JP2017166947A (en) 2016-03-16 2017-09-21 株式会社東芝 Gas detection device
SG11201809015WA (en) 2016-04-14 2018-11-29 Lockheed Corp Two-dimensional membrane structures having flow passages
WO2017180141A1 (en) 2016-04-14 2017-10-19 Lockheed Martin Corporation Selective interfacial mitigation of graphene defects
WO2017180134A1 (en) 2016-04-14 2017-10-19 Lockheed Martin Corporation Methods for in vivo and in vitro use of graphene and other two-dimensional materials
SG11201808961QA (en) 2016-04-14 2018-11-29 Lockheed Corp Methods for in situ monitoring and control of defect formation or healing
KR101871572B1 (en) * 2016-04-19 2018-06-27 포항공과대학교 산학협력단 Hybrid nanoparticles for detection of pathogenic bacteria and Manufacturing methods thereof
US9934848B2 (en) 2016-06-07 2018-04-03 Nantero, Inc. Methods for determining the resistive states of resistive change elements
US9941001B2 (en) 2016-06-07 2018-04-10 Nantero, Inc. Circuits for determining the resistive states of resistive change elements
JP2019526794A (en) * 2016-08-22 2019-09-19 ラモット・アット・テル・アビブ・ユニバーシテイ・リミテッドRamot At Tel Aviv University Ltd. Method and system for detection of biological specimens
US20180113093A1 (en) * 2016-08-30 2018-04-26 FemtoDx Semiconductor-sensor based near-patient diagnostic system and methods
CN106935501B (en) * 2016-10-19 2023-08-22 中国人民解放军国防科学技术大学 Method for preparing single-electron transistor by assembling gold particles with polystyrene microsphere template
US10768137B2 (en) 2016-11-02 2020-09-08 Lg Chem, Ltd. Gas detecting sensor
WO2018084602A1 (en) * 2016-11-02 2018-05-11 주식회사 엘지화학 Gas detection sensor
US11193888B2 (en) 2017-03-29 2021-12-07 Ramot At Tel-Aviv University Ltd. Method and system for separating biomolecules from a mixture containing same
US10900924B2 (en) * 2017-06-19 2021-01-26 International Business Machines Corporation Porous nanostructured electrodes for detection of neurotransmitters
EP3652721A1 (en) 2017-09-04 2020-05-20 NNG Software Developing and Commercial LLC A method and apparatus for collecting and using sensor data from a vehicle
KR102029180B1 (en) * 2017-09-21 2019-10-08 한국과학기술연구원 Method for manufacturing of tin sulfide (II)(SnS) thin film
GB2568298A (en) * 2017-11-13 2019-05-15 Univ Stellenbosch Methods, systems and devices for detecting inflammation
KR102493590B1 (en) * 2018-02-27 2023-01-30 연세대학교 산학협력단 Acetylene detecting sensor and method for manufacturing the same and acetylene detecting system comprising the same
CN112074731A (en) * 2018-05-04 2020-12-11 雷纳诊断有限公司 Biosensor for detecting an analyte
JP2020150930A (en) * 2018-07-06 2020-09-24 国立大学法人東海国立大学機構 Fluidic device and method for separating biomolecules
CN112867533A (en) 2018-08-14 2021-05-28 神经触发有限公司 Method and apparatus for percutaneous facial nerve stimulation and application thereof
JPWO2020054773A1 (en) * 2018-09-11 2021-08-30 国立大学法人東海国立大学機構 Biomolecule separation device and its operation method
TWI765209B (en) * 2019-01-18 2022-05-21 國立陽明交通大學 Field effect transistor-based biosensor for detecting whole-cell bacteria and field effect transistor-based biosensor assembly including the same
WO2020170237A1 (en) 2019-02-19 2020-08-27 Edgy Bees Ltd. Estimating real-time delay of a video data stream
US11768262B2 (en) 2019-03-14 2023-09-26 Massachusetts Institute Of Technology Interface responsive to two or more sensor modalities
WO2020191206A1 (en) * 2019-03-20 2020-09-24 The Regents Of The University Of California Bio mime tic nanovilli chips for enhanced capture of tumor-derived extracellular vesicles
CN109920912B (en) * 2019-03-28 2023-02-03 江苏师范大学 Multifunctional synapse bionic device and preparation method thereof
TWI746974B (en) * 2019-05-09 2021-11-21 國立清華大學 Thermoelectric nanosensor, manufacturing method and application method thereof
US20220213425A1 (en) 2019-06-24 2022-07-07 President And Fellows Of Harvard Cell scaffold comprising an electronic circuit
US11630007B2 (en) * 2019-06-24 2023-04-18 Clemson University Graphene/polymer heterostructure-based flexible and biocompatible pressure/strain sensor
CN114786737A (en) * 2019-10-04 2022-07-22 新加坡国立大学 Hemostatic device, hemostatic coating dispersion and hydrophobic surface
KR102455443B1 (en) * 2021-02-22 2022-10-18 제일기술(주) Nonenzymatic glucose sensor based on transistor and manufacturing method thereof
WO2022181400A1 (en) * 2021-02-25 2022-09-01 国立研究開発法人科学技術振興機構 Gas sensor
CN115165991B (en) * 2022-07-06 2023-11-07 岭南师范学院 Preparation method of reduced glutathione photoelectrochemical sensor

Family Cites Families (218)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US646189A (en) * 1900-01-22 1900-03-27 Neff E Parish Bicycle-frame.
US3444100A (en) 1963-10-30 1969-05-13 Trancoa Chem Corp Radiation resistant semiconductor grade silicon containing a metal oxide
US3873360A (en) 1971-11-26 1975-03-25 Western Electric Co Method of depositing a metal on a surface of a substrate
US3873359A (en) 1971-11-26 1975-03-25 Western Electric Co Method of depositing a metal on a surface of a substrate
US3900614A (en) 1971-11-26 1975-08-19 Western Electric Co Method of depositing a metal on a surface of a substrate
JPS6194042A (en) 1984-10-16 1986-05-12 Matsushita Electric Ind Co Ltd Molecular construction and its manufacture
US4939556A (en) 1986-07-10 1990-07-03 Canon Kabushiki Kaisha Conductor device
JPS63128246A (en) * 1986-11-19 1988-05-31 Seitai Kinou Riyou Kagakuhin Shinseizou Gijutsu Kenkyu Kumiai Field effect transistor type gaseous oxygen sensor
JPH01301570A (en) 1988-02-26 1989-12-05 Hitachi Chem Co Ltd Method for repairing asbestos slate
US5089545A (en) 1989-02-12 1992-02-18 Biotech International, Inc. Switching and memory elements from polyamino acids and the method of their assembly
US5023139A (en) 1989-04-04 1991-06-11 Research Corporation Technologies, Inc. Nonlinear optical materials
EP0605408A1 (en) 1989-10-18 1994-07-13 Research Corporation Technologies, Inc. Coated particles and methods of coating particles
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
US5332910A (en) 1991-03-22 1994-07-26 Hitachi, Ltd. Semiconductor optical device with nanowhiskers
US5247602A (en) 1991-09-16 1993-09-21 Eastman Kodak Company Blue transparent second harmonic generator
US5274602A (en) 1991-10-22 1993-12-28 Florida Atlantic University Large capacity solid-state memory
JP3243303B2 (en) 1991-10-28 2002-01-07 ゼロックス・コーポレーション Quantum confined semiconductor light emitting device and method of manufacturing the same
US5475341A (en) 1992-06-01 1995-12-12 Yale University Sub-nanoscale electronic systems and devices
US5252835A (en) 1992-07-17 1993-10-12 President And Trustees Of Harvard College Machining oxide thin-films with an atomic force microscope: pattern and object formation on the nanometer scale
EP0622439A1 (en) 1993-04-20 1994-11-02 Koninklijke Philips Electronics N.V. Quantum sized activator doped semiconductor particles
US5453970A (en) 1993-07-13 1995-09-26 Rust; Thomas F. Molecular memory medium and molecular memory disk drive for storing information using a tunnelling probe
WO1995002709A2 (en) 1993-07-15 1995-01-26 President And Fellows Of Harvard College EXTENDED NITRIDE MATERIAL COMPRISING β-C3N¿4?
US5776748A (en) 1993-10-04 1998-07-07 President And Fellows Of Harvard College Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor
US5900160A (en) 1993-10-04 1999-05-04 President And Fellows Of Harvard College Methods of etching articles via microcontact printing
US6180239B1 (en) 1993-10-04 2001-01-30 President And Fellows Of Harvard College Microcontact printing on surfaces and derivative articles
US5512131A (en) 1993-10-04 1996-04-30 President And Fellows Of Harvard College Formation of microstamped patterns on surfaces and derivative articles
US5936703A (en) 1993-10-13 1999-08-10 Nof Corporation Alkoxysilane compound, surface processing solution and contact lens
JP3254865B2 (en) 1993-12-17 2002-02-12 ソニー株式会社 Camera device
EP0659911A1 (en) 1993-12-23 1995-06-28 International Business Machines Corporation Method to form a polycrystalline film on a substrate
CN1040043C (en) 1994-04-29 1998-09-30 武汉大学 Ultramicro nm electrode and ultramicro sensor
US5620850A (en) 1994-09-26 1997-04-15 President And Fellows Of Harvard College Molecular recognition at surfaces derivatized with self-assembled monolayers
DE4438543A1 (en) * 1994-10-28 1996-05-02 Bayer Ag Coated polycarbonate moldings
AU3894595A (en) 1994-11-08 1996-05-31 Spectra Science Corporation Semiconductor nanocrystal display materials and display apparatus employing same
US5581091A (en) 1994-12-01 1996-12-03 Moskovits; Martin Nanoelectric devices
US5866434A (en) * 1994-12-08 1999-02-02 Meso Scale Technology Graphitic nanotubes in luminescence assays
US5449627A (en) 1994-12-14 1995-09-12 United Microelectronics Corporation Lateral bipolar transistor and FET compatible process for making it
US5539214A (en) * 1995-02-06 1996-07-23 Regents Of The University Of California Quantum bridges fabricated by selective etching of superlattice structures
US5524092A (en) * 1995-02-17 1996-06-04 Park; Jea K. Multilayered ferroelectric-semiconductor memory-device
EP0812434B1 (en) 1995-03-01 2013-09-18 President and Fellows of Harvard College Microcontact printing on surfaces and derivative articles
BR9607193B1 (en) 1995-03-10 2009-01-13 multispecific multispecific electrochemical test.
US5747180A (en) 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
US5824470A (en) 1995-05-30 1998-10-20 California Institute Of Technology Method of preparing probes for sensing and manipulating microscopic environments and structures
US6190634B1 (en) 1995-06-07 2001-02-20 President And Fellows Of Harvard College Carbide nanomaterials
US5751156A (en) 1995-06-07 1998-05-12 Yale University Mechanically controllable break transducer
US5757038A (en) 1995-11-06 1998-05-26 International Business Machines Corporation Self-aligned dual gate MOSFET with an ultranarrow channel
WO1997019208A1 (en) 1995-11-22 1997-05-29 Northwestern University Method of encapsulating a material in a carbon nanotube
US5897945A (en) 1996-02-26 1999-04-27 President And Fellows Of Harvard College Metal oxide nanorods
US6036774A (en) 1996-02-26 2000-03-14 President And Fellows Of Harvard College Method of producing metal oxide nanorods
DE19610115C2 (en) 1996-03-14 2000-11-23 Fraunhofer Ges Forschung Detection of molecules and molecular complexes
US6355198B1 (en) 1996-03-15 2002-03-12 President And Fellows Of Harvard College Method of forming articles including waveguides via capillary micromolding and microtransfer molding
DE69707853T2 (en) 1996-03-15 2002-06-27 Harvard College METHOD FOR SHAPING OBJECTS AND MICROSTRUCTURING SURFACES BY MOLDING WITH CAPILLARY EFFECT
US6060121A (en) 1996-03-15 2000-05-09 President And Fellows Of Harvard College Microcontact printing of catalytic colloids
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
RU2099808C1 (en) 1996-04-01 1997-12-20 Евгений Инвиевич Гиваргизов Process of growing of oriented systems of whiskers and gear for its implementation ( versions )
US5942443A (en) 1996-06-28 1999-08-24 Caliper Technologies Corporation High throughput screening assay systems in microscale fluidic devices
US5726524A (en) 1996-05-31 1998-03-10 Minnesota Mining And Manufacturing Company Field emission device having nanostructured emitters
AU4055297A (en) * 1996-08-08 1998-02-25 William Marsh Rice University Macroscopically manipulable nanoscale devices made from nanotube assemblies
JPH10106960A (en) * 1996-09-25 1998-04-24 Sony Corp Manufacture of quantum thin line
US6038060A (en) 1997-01-16 2000-03-14 Crowley; Robert Joseph Optical antenna array for harmonic generation, mixing and signal amplification
US5908692A (en) 1997-01-23 1999-06-01 Wisconsin Alumni Research Foundation Ordered organic monolayers and methods of preparation thereof
CA2283502C (en) 1997-03-07 2005-06-14 William Marsh Rice University Carbon fibers formed from singlewall carbon nanotubes
US5997832A (en) 1997-03-07 1999-12-07 President And Fellows Of Harvard College Preparation of carbide nanorods
US6683783B1 (en) 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
JP3183845B2 (en) 1997-03-21 2001-07-09 財団法人ファインセラミックスセンター Method for producing carbon nanotube and carbon nanotube film
US5847565A (en) 1997-03-31 1998-12-08 Council Of Scientific And Industrial Research Logic device
US6359288B1 (en) 1997-04-24 2002-03-19 Massachusetts Institute Of Technology Nanowire arrays
US5864823A (en) 1997-06-25 1999-01-26 Virtel Corporation Integrated virtual telecommunication system for E-commerce
US6069380A (en) 1997-07-25 2000-05-30 Regents Of The University Of Minnesota Single-electron floating-gate MOS memory
US7001996B1 (en) * 1997-08-21 2006-02-21 The United States Of America As Represented By The Secretary Of The Army Enzymatic template polymerization
US6187165B1 (en) 1997-10-02 2001-02-13 The John Hopkins University Arrays of semi-metallic bismuth nanowires and fabrication techniques therefor
US5903010A (en) 1997-10-29 1999-05-11 Hewlett-Packard Company Quantum wire switch and switching method
JP3740295B2 (en) 1997-10-30 2006-02-01 キヤノン株式会社 Carbon nanotube device, manufacturing method thereof, and electron-emitting device
US6004444A (en) 1997-11-05 1999-12-21 The Trustees Of Princeton University Biomimetic pathways for assembling inorganic thin films and oriented mesoscopic silicate patterns through guided growth
US20030135971A1 (en) * 1997-11-12 2003-07-24 Michael Liberman Bundle draw based processing of nanofibers and method of making
US6123819A (en) * 1997-11-12 2000-09-26 Protiveris, Inc. Nanoelectrode arrays
US6762056B1 (en) 1997-11-12 2004-07-13 Protiveris, Inc. Rapid method for determining potential binding sites of a protein
US5985173A (en) 1997-11-18 1999-11-16 Gray; Henry F. Phosphors having a semiconductor host surrounded by a shell
US6207392B1 (en) 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
JP3902883B2 (en) 1998-03-27 2007-04-11 キヤノン株式会社 Nanostructure and manufacturing method thereof
US6287765B1 (en) 1998-05-20 2001-09-11 Molecular Machines, Inc. Methods for detecting and identifying single molecules
JP2000041320A (en) * 1998-05-20 2000-02-08 Yazaki Corp Grommet
US6159742A (en) 1998-06-05 2000-12-12 President And Fellows Of Harvard College Nanometer-scale microscopy probes
US6203864B1 (en) 1998-06-08 2001-03-20 Nec Corporation Method of forming a heterojunction of a carbon nanotube and a different material, method of working a filament of a nanotube
JP4137239B2 (en) * 1998-08-03 2008-08-20 株式会社堀場製作所 ISFET array
US6346189B1 (en) 1998-08-14 2002-02-12 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube structures made using catalyst islands
US7416699B2 (en) * 1998-08-14 2008-08-26 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube devices
DE69941294D1 (en) 1998-09-18 2009-10-01 Univ Rice William M CHEMICAL DERIVATION OF UNIFORM CARBON NANOTUBES TO FACILITATE THEIR SOLVATATION AND USE OF DERIVATED NANORESE
JP4630459B2 (en) 1998-09-24 2011-02-09 インディアナ・ユニバーシティ・リサーチ・アンド・テクノロジー・コーポレーション Water-soluble luminescent quantum dots and biomolecular conjugates thereof
AU6267299A (en) 1998-09-28 2000-04-17 Xidex Corporation Method for manufacturing carbon nanotubes as functional elements of mems devices
US6705152B2 (en) 2000-10-24 2004-03-16 Nanoproducts Corporation Nanostructured ceramic platform for micromachined devices and device arrays
US6468657B1 (en) * 1998-12-04 2002-10-22 The Regents Of The University Of California Controllable ion-exchange membranes
JP3754568B2 (en) 1999-01-29 2006-03-15 シャープ株式会社 Quantum wire manufacturing method
US20020013031A1 (en) 1999-02-09 2002-01-31 Kuen-Jian Chen Method of improving the reliability of gate oxide layer
US6624420B1 (en) 1999-02-18 2003-09-23 University Of Central Florida Lutetium yttrium orthosilicate single crystal scintillator detector
ATE465519T1 (en) 1999-02-22 2010-05-15 Clawson Joseph E Jr ELECTRONIC COMPONENT BASED ON NANOSTRUCTURES
US6149819A (en) 1999-03-02 2000-11-21 United States Filter Corporation Air and water purification using continuous breakpoint halogenation and peroxygenation
US6143184A (en) 1999-03-02 2000-11-07 United States Filter Corporation Air and water purification using continuous breakpoint halogenation
US6314019B1 (en) 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US6459095B1 (en) 1999-03-29 2002-10-01 Hewlett-Packard Company Chemically synthesized and assembled electronics devices
US6256767B1 (en) 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US7030408B1 (en) 1999-03-29 2006-04-18 Hewlett-Packard Development Company, L.P. Molecular wire transistor (MWT)
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6270074B1 (en) 1999-04-14 2001-08-07 Hewlett-Packard Company Print media vacuum holddown
US7112315B2 (en) 1999-04-14 2006-09-26 The Regents Of The University Of California Molecular nanowires from single walled carbon nanotubes
AUPP976499A0 (en) 1999-04-16 1999-05-06 Commonwealth Scientific And Industrial Research Organisation Multilayer carbon nanotube films
US20030124509A1 (en) * 1999-06-03 2003-07-03 Kenis Paul J.A. Laminar flow patterning and articles made thereby
US6361861B2 (en) 1999-06-14 2002-03-26 Battelle Memorial Institute Carbon nanotubes on a substrate
AU782000B2 (en) 1999-07-02 2005-06-23 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6538367B1 (en) 1999-07-15 2003-03-25 Agere Systems Inc. Field emitting device comprising field-concentrating nanoconductor assembly and method for making the same
US6322713B1 (en) 1999-07-15 2001-11-27 Agere Systems Guardian Corp. Nanoscale conductive connectors and method for making same
US6465132B1 (en) 1999-07-22 2002-10-15 Agere Systems Guardian Corp. Article comprising small diameter nanowires and method for making the same
US6286226B1 (en) * 1999-09-24 2001-09-11 Agere Systems Guardian Corp. Tactile sensor comprising nanowires and method for making the same
US6340822B1 (en) 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US6741019B1 (en) 1999-10-18 2004-05-25 Agere Systems, Inc. Article comprising aligned nanowires
US6437329B1 (en) 1999-10-27 2002-08-20 Advanced Micro Devices, Inc. Use of carbon nanotubes as chemical sensors by incorporation of fluorescent molecules within the tube
US20050037374A1 (en) * 1999-11-08 2005-02-17 Melker Richard J. Combined nanotechnology and sensor technologies for simultaneous diagnosis and treatment
US6974706B1 (en) 2003-01-16 2005-12-13 University Of Florida Research Foundation, Inc. Application of biosensors for diagnosis and treatment of disease
EP1247089B1 (en) * 1999-12-15 2008-07-23 Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube devices
US6248674B1 (en) 2000-02-02 2001-06-19 Hewlett-Packard Company Method of aligning nanowires
EP1263887A1 (en) 2000-02-04 2002-12-11 Massachusetts Institute Of Technology Insulated nanoscopic pathways, compositions and devices of the same
US6503375B1 (en) * 2000-02-11 2003-01-07 Applied Materials, Inc Electroplating apparatus using a perforated phosphorus doped consumable anode
US6294450B1 (en) * 2000-03-01 2001-09-25 Hewlett-Packard Company Nanoscale patterning for the formation of extensive wires
CA2404296A1 (en) 2000-03-22 2001-09-27 University Of Massachusetts Nanocylinder arrays
US6720240B2 (en) * 2000-03-29 2004-04-13 Georgia Tech Research Corporation Silicon based nanospheres and nanowires
JP4089122B2 (en) 2000-03-31 2008-05-28 株式会社リコー Contact charger manufacturing method, contact charger obtained by the method, charging method and image recording apparatus
US6479028B1 (en) 2000-04-03 2002-11-12 The Regents Of The University Of California Rapid synthesis of carbon nanotubes and carbon encapsulated metal nanoparticles by a displacement reaction
US7323143B2 (en) * 2000-05-25 2008-01-29 President And Fellows Of Harvard College Microfluidic systems including three-dimensionally arrayed channel networks
US6440637B1 (en) 2000-06-28 2002-08-27 The Aerospace Corporation Electron beam lithography method forming nanocrystal shadowmasks and nanometer etch masks
EP1170799A3 (en) 2000-07-04 2009-04-01 Infineon Technologies AG Electronic device and method of manufacture of an electronic device
US6468677B1 (en) * 2000-08-01 2002-10-22 Premark Rwp Holdings Inc. Electroluminescent high pressure laminate
JP5013650B2 (en) * 2000-08-22 2012-08-29 プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ Doped elongated semiconductors, growth of such semiconductors, devices containing such semiconductors, and the manufacture of such devices
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
US20060175601A1 (en) 2000-08-22 2006-08-10 President And Fellows Of Harvard College Nanoscale wires and related devices
WO2002022889A2 (en) 2000-09-11 2002-03-21 President And Fellows Of Harvard College Direct haplotyping using carbon nanotube probes
WO2002022499A1 (en) 2000-09-18 2002-03-21 President And Fellows Of Harvard College Fabrication of nanotube microscopy tips
US6743408B2 (en) 2000-09-29 2004-06-01 President And Fellows Of Harvard College Direct growth of nanotubes, and their use in nanotweezers
CA2425412A1 (en) 2000-10-10 2002-04-18 Bioforce Nanosciences, Inc. Nanoscale sensor
JP3811004B2 (en) 2000-11-26 2006-08-16 喜萬 中山 Conductive scanning microscope probe
EP1342075B1 (en) * 2000-12-11 2008-09-10 President And Fellows Of Harvard College Device contaning nanosensors for detecting an analyte and its method of manufacture
US20020084502A1 (en) 2000-12-29 2002-07-04 Jin Jang Carbon nanotip and fabricating method thereof
US6958216B2 (en) 2001-01-10 2005-10-25 The Trustees Of Boston College DNA-bridged carbon nanotube arrays
US6586095B2 (en) 2001-01-12 2003-07-01 Georgia Tech Research Corp. Semiconducting oxide nanostructures
WO2002093738A2 (en) 2001-01-19 2002-11-21 California Institute Of Technology Carbon nanobimorph actuator and sensor
JP2004527905A (en) 2001-03-14 2004-09-09 ユニバーシティー オブ マサチューセッツ Nano manufacturing
WO2002095099A1 (en) * 2001-03-29 2002-11-28 Stanford University Noncovalent sidewall functionalization of carbon nanotubes
JP2004532133A (en) 2001-03-30 2004-10-21 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア Method for assembling nanostructures and nanowires and device assembled therefrom
WO2002080360A1 (en) 2001-03-30 2002-10-10 California Institute Of Technology Pattern-aligned carbon nanotube growth and tunable resonator apparatus
US7459312B2 (en) 2001-04-18 2008-12-02 The Board Of Trustees Of The Leland Stanford Junior University Photodesorption in carbon nanotubes
US7232460B2 (en) * 2001-04-25 2007-06-19 Xillus, Inc. Nanodevices, microdevices and sensors on in-vivo structures and method for the same
US6902720B2 (en) 2001-05-10 2005-06-07 Worcester Polytechnic Institute Cyclic peptide structures for molecular scale electronic and photonic devices
US7132275B2 (en) 2001-05-14 2006-11-07 The John Hopkins University Multifunctional magnetic nanowires
CA2447728A1 (en) 2001-05-18 2003-01-16 President And Fellows Of Harvard College Nanoscale wires and related devices
US20030048619A1 (en) * 2001-06-15 2003-03-13 Kaler Eric W. Dielectrophoretic assembling of electrically functional microwires
US6846565B2 (en) 2001-07-02 2005-01-25 Board Of Regents, The University Of Texas System Light-emitting nanoparticles and method of making same
US20030113940A1 (en) * 2001-07-16 2003-06-19 Erlanger Bernard F. Antibodies specific for nanotubes and related methods and compositions
KR20040047777A (en) 2001-07-20 2004-06-05 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 Transition metal oxide nanowires, and devices incorporating them
KR100455284B1 (en) 2001-08-14 2004-11-12 삼성전자주식회사 High-throughput sensor for detecting biomolecules using carbon nanotubes
WO2003023360A2 (en) * 2001-09-10 2003-03-20 Meso Scale Technologies, Llc Methods and apparatus for conducting multiple measurements on a sample
US7482168B2 (en) * 2001-09-15 2009-01-27 The Regents Of The University Of California Photoluminescent polymetalloles as chemical sensors
US20030073071A1 (en) * 2001-10-12 2003-04-17 Jurgen Fritz Solid state sensing system and method for measuring the binding or hybridization of biomolecules
JP3816788B2 (en) 2001-11-22 2006-08-30 株式会社東芝 Nonvolatile semiconductor memory device
US20050072213A1 (en) * 2001-11-26 2005-04-07 Isabelle Besnard Use of id semiconductor materials as chemical sensing materials, produced and operated close to room temperature
US20030124717A1 (en) * 2001-11-26 2003-07-03 Yuji Awano Method of manufacturing carbon cylindrical structures and biopolymer detection device
US7385262B2 (en) * 2001-11-27 2008-06-10 The Board Of Trustees Of The Leland Stanford Junior University Band-structure modulation of nano-structures in an electric field
WO2003054931A1 (en) 2001-12-12 2003-07-03 Jorma Virtanen Method and apparatus for nano-sensing
US6882767B2 (en) 2001-12-27 2005-04-19 The Regents Of The University Of California Nanowire optoelectric switching device and method
US20030134433A1 (en) * 2002-01-16 2003-07-17 Nanomix, Inc. Electronic sensing of chemical and biological agents using functionalized nanostructures
EP1468423A2 (en) 2002-01-18 2004-10-20 California Institute Of Technology Array-based architecture for molecular electronics
CN1444259A (en) 2002-03-12 2003-09-24 株式会社东芝 Method for mfg. semiconductor device
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US20040026684A1 (en) * 2002-04-02 2004-02-12 Nanosys, Inc. Nanowire heterostructures for encoding information
US20030189202A1 (en) 2002-04-05 2003-10-09 Jun Li Nanowire devices and methods of fabrication
US20040067530A1 (en) * 2002-05-08 2004-04-08 The Regents Of The University Of California Electronic sensing of biomolecular processes
AU2003258969A1 (en) * 2002-06-27 2004-01-19 Nanosys Inc. Planar nanowire based sensor elements, devices, systems and methods for using and making same
US7335908B2 (en) * 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
AU2003261205A1 (en) 2002-07-19 2004-02-09 President And Fellows Of Harvard College Nanoscale coherent optical components
DE60313462T2 (en) * 2002-07-25 2008-01-03 California Institute Of Technology, Pasadena SUBLITHOGRAPHIC NANO AREA STORE ARCHITECTURE
AU2003279708A1 (en) 2002-09-05 2004-03-29 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
EP1537445B1 (en) * 2002-09-05 2012-08-01 Nanosys, Inc. Nanocomposites
US7662313B2 (en) * 2002-09-05 2010-02-16 Nanosys, Inc. Oriented nanostructures and methods of preparing
US7572393B2 (en) * 2002-09-05 2009-08-11 Nanosys Inc. Organic species that facilitate charge transfer to or from nanostructures
AU2003283973B2 (en) 2002-09-30 2008-10-30 Oned Material Llc Large-area nanoenabled macroelectronic substrates and uses therefor
US7067867B2 (en) * 2002-09-30 2006-06-27 Nanosys, Inc. Large-area nonenabled macroelectronic substrates and uses therefor
CA2499944A1 (en) 2002-09-30 2004-04-15 Nanosys, Inc. Integrated displays using nanowire transistors
US7135728B2 (en) 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
AU2003282548A1 (en) 2002-10-10 2004-05-04 Nanosys, Inc. Nano-chem-fet based biosensors
US7163659B2 (en) * 2002-12-03 2007-01-16 Hewlett-Packard Development Company, L.P. Free-standing nanowire sensor and method for detecting an analyte in a fluid
US6815706B2 (en) * 2002-12-17 2004-11-09 Hewlett-Packard Development Company, L.P. Nano optical sensors via molecular self-assembly
US6969121B2 (en) 2003-02-24 2005-11-29 Cornell Drajan Chair construction
US20040191517A1 (en) * 2003-03-26 2004-09-30 Industrial Technology Research Institute Self-assembling nanowires
US7274208B2 (en) 2003-06-02 2007-09-25 California Institute Of Technology Nanoscale wire-based sublithographic programmable logic arrays
EP1652218A2 (en) * 2003-08-04 2006-05-03 Nanosys, Inc. System and process for producing nanowire composites and electronic substrates therefrom
US7067328B2 (en) * 2003-09-25 2006-06-27 Nanosys, Inc. Methods, devices and compositions for depositing and orienting nanostructures
US20050253137A1 (en) 2003-11-20 2005-11-17 President And Fellows Of Harvard College Nanoscale arrays, robust nanostructures, and related devices
US7662706B2 (en) * 2003-11-26 2010-02-16 Qunano Ab Nanostructures formed of branched nanowhiskers and methods of producing the same
WO2005093831A1 (en) 2004-02-13 2005-10-06 President And Fellows Of Harvard College Nanostructures containing metal-semiconductor compounds
US20090227107A9 (en) 2004-02-13 2009-09-10 President And Fellows Of Havard College Nanostructures Containing Metal Semiconductor Compounds
US20050202615A1 (en) 2004-03-10 2005-09-15 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays
EP1723676A4 (en) 2004-03-10 2009-04-15 Nanosys Inc Nano-enabled memory devices and anisotropic charge carrying arrays
US7595528B2 (en) 2004-03-10 2009-09-29 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays
US7057881B2 (en) 2004-03-18 2006-06-06 Nanosys, Inc Nanofiber surface based capacitors
US7115971B2 (en) 2004-03-23 2006-10-03 Nanosys, Inc. Nanowire varactor diode and methods of making same
EP1747577A2 (en) 2004-04-30 2007-01-31 Nanosys, Inc. Systems and methods for nanowire growth and harvesting
CA2565765A1 (en) 2004-05-13 2005-12-01 The Regents Of The University Of California Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices
US7129154B2 (en) 2004-05-28 2006-10-31 Agilent Technologies, Inc Method of growing semiconductor nanowires with uniform cross-sectional area using chemical vapor deposition
CN102064102B (en) 2004-06-08 2013-10-30 桑迪士克公司 Methods and devices for forming nanostructure monolayers and devices including such monolayers
CA2572798A1 (en) * 2004-07-07 2006-07-27 Nanosys, Inc. Systems and methods for harvesting and integrating nanowires
US8072005B2 (en) 2005-02-04 2011-12-06 Brown University Research Foundation Apparatus, method and computer program product providing radial addressing of nanowires
US20060269927A1 (en) 2005-05-25 2006-11-30 Lieber Charles M Nanoscale sensors
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
EP2013611A2 (en) 2006-03-15 2009-01-14 The President and Fellows of Harvard College Nanobioelectronics
WO2007145701A2 (en) 2006-04-07 2007-12-21 President And Fellows Of Harvard College Nanoscale wire methods and devices
WO2008033303A2 (en) 2006-09-11 2008-03-20 President And Fellows Of Harvard College Branched nanoscale wires
WO2008123869A2 (en) 2006-11-21 2008-10-16 President And Fellows Of Harvard College Millimeter-long nanowires
US8575663B2 (en) 2006-11-22 2013-11-05 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
US7647113B2 (en) 2006-12-21 2010-01-12 Ams Research Corporation Electrode implantation in male external urinary sphincter
US20120094192A1 (en) * 2010-10-14 2012-04-19 Ut-Battelle, Llc Composite nanowire compositions and methods of synthesis

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9103775B2 (en) 2002-01-16 2015-08-11 Nanomix, Inc. Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices
US9291613B2 (en) 2002-06-21 2016-03-22 Nanomix, Inc. Sensor having a thin-film inhibition layer
US9149836B2 (en) 2004-06-08 2015-10-06 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
US8993346B2 (en) 2009-08-07 2015-03-31 Nanomix, Inc. Magnetic carbon nanotube based biodetection
US9299430B1 (en) 2015-01-22 2016-03-29 Nantero Inc. Methods for reading and programming 1-R resistive change element arrays

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