WO2002048822A2 - Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers - Google Patents
Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers Download PDFInfo
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- WO2002048822A2 WO2002048822A2 PCT/IL2001/001146 IL0101146W WO0248822A2 WO 2002048822 A2 WO2002048822 A2 WO 2002048822A2 IL 0101146 W IL0101146 W IL 0101146W WO 0248822 A2 WO0248822 A2 WO 0248822A2
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
Definitions
- RAM memory based on Nanotechnology, capable, among other things, of replacing the hard disk in computers.
- the present invention relates to RAM memory, and more specifically to a RAM memory based on Nanotechnology, capable, among other things, of replacing the hard disk in computers, with much higher speeds and volumes compared to the current state-of-the-art hard disks.
- the next main bottleneck will be the speed of the servers, and more specifically the speed (or rather the lack of it) of the hard-disks. Therefore, finding new revolutionary ways of making faster and larger hard- disks and/or larger RAM in the computer itself can help boost the computer and Internet world much faster into the future.
- the speeds of current state-of-the-art hard disks are around 8 milliseconds access time and theoretically up to 66 Megabytes per second transfer-time burst rate, but in practice the data transfer rate is usually less than 5 Megabytes per second.
- the sizes of the current state-of-the-art hard disks are around 18-170 Gigabytes. Also, because of the relatively huge seek time, caused by the mechanical nature of the hard-disk, as files become fragmented, the actual data transfer rate drops even further. All these problems would disappear with non-mechanical disks.
- the volatile RAM memory currently used in computers has a speed of about 100 nanoseconds per cell but when accessing large blocks can act as if it is about 5-12 nanoseconds, and the transfer rate is at least hundreds of times faster than the hard disk. Its size is usually around 64-512 Megabytes. The ability to make larger and faster volatile RAM is also limited by the problems of creating ever smaller circuits on silicon.
- Bucky Balls are the most readily available nano-structures that can be created today, using carbon's tendency to self-construct in such structures under the appropriate conditions.
- Bucky Balls (the most common one of which has 60 carbon atoms) are shaped like a football with a combination of hexagons and pentagons on the surface, with a diameter of about 1 nanometer.
- Bucky Tubes are similarly shaped like hollow tubes, with a diameter of typically a few nanometers for single-wall tubes and more for multi-wall tubes, typically ending at both ends with closed curves like half- balls, and a length of usually a few dozens of nano-meters up to 300 microns (usually, this size is reached when a small group of Bucky-tubes grow together side by side, so the "wire" is even stronger than if it were made of a single tube).
- current technology it is possible to convert about 70% of a given amount of graphite to Bucky balls, and with a slight change about 70% can be converted to Bucky tubes instead.
- Bucky tubes and Bucky balls have some unique features that make them extremely attractive: 1. They can conduct electricity about 10-100 times better than copper, 2. They are about a 100 times stronger than steel and weigh about 4-10 times less and are much more flexible, 3. They can chemically react with a large number of elements from the periodic table, so many compounds can be created with various impurities that can lead to more interesting qualities.
- the memory cell is read similarly by electrical means.
- This memory is estimated to enable a data transfer rate of about 10 TeraBytes per second, which is about a million times faster than today's hard disks. And since these structures are so small, assuming for example one memory cell per every 20 nanometers, a surface of 10x10 centimeters could contain 5 million x 5 million memory cells, which is 25 Terabits, or in other words about 3 TeraBytes. Assuming that the largest hard disks today contain about 170 GigaBytes, this is about 17 times larger than the current day largest hard- disks. So in terms of speed this is quite a significant improvement, but in terms of size it is not so impressive, since normal hard-disks typically continue to double in size about every year. However, Nec's invention might not become practical for many years, since, although some Bucky tubes contain one or more Bucky balls spontaneously, no one has yet discovered or even suggested a way for creating neat uniform-sized Bucky tubes with one Bucky ball in each of them.
- the present invention tries to solve the problem of making much faster and much larger RAM by offering solutions that are significantly better:
- An additional advantage of using 3-d cubes instead of 2-d surfaces is that it solves better the problem of induction between the neighboring wires: This induction is bigger the longer the wire and the closer the nano-wires are to each other, so having for example a 2x2x2 cm cube is better than having a 10x10 cm flat surface. Induction between the wires wastes energy and limits the switching speed, however it is relevant mainly if the same memory cell or cells are accessed again and again at very high frequencies.
- the thinnest single-cell nano-tubes are used as wires in order to reduce this problem even further, and preferably they contain Alkali metal impurities that make them even better conductors, in order to reduce this problem even further.
- Another advantage of having so much spare memory is that a large percent can be used for redundancy and error correction to correct for any errors that might occur for example because of quantum effects, cosmic rays, etc.
- One possible way that might help building such 3D structures is for example adding magnetic impurities to Bucky tubes and to Bucky balls and then using for example magnetic fields to order them in the required arrays and then creating for example alternating layers of these structures with insulating layers, by combination for example with methods of masks and multi-layer lithography.
- Such masks can be used also for example for adding vertical Bucky tubes between the layers, preferably in combination with magnetic field lines.
- each cell in the 3-d memory is either binary, or can assume more, preferably discrete, states.
- Another possible variation is to use for example a large number of very thin two dimensional nano-memory layers stacked upon each other on the same chip, so that different layers are accessed for example by multiplexors on the outside connectors, but that could make it more expensive and require multiplexors with a very large number of connectors.
- Another possible variation is using for example Bucky balls that have been treated by the new discovery of Makarova el. al., published on Nature magazine on Oct.
- Another possible variation is for example to add appropriate magnetic impurities to Bucky balls (or for example preferably small Bucky tubes) and then mix them for example with other Bucky balls or other nano-elements that are nonmagnetic, and use for example magnetic field lines during the construction, so that for example a cube is created that contains in all directions very regular layers of magnetic and non-magnetic Bucky balls.
- Another possible variation is to use for example just magnetically doped Bucky balls in the cube, and/or for example buckey balls with such magnetic elements inside the balls (created for example by bombarding them with such elements).
- the Bucky balls remain transparent and light responsive even when doped with appropriate elements (such as for example Cobalt and/or other impurities), they can then be similarly written and read in the 3-d cube for example by crossing 2 or more laser beams, and this way no electrical nano-wiring is needed.
- appropriate elements such as for example Cobalt and/or other impurities
- a moving element within another element that can take for example 1 of 6 states: Up on the X-direction, down on the X-direction, up on the Y-direction, down on the Y-direction, up on the Z-direction, and down on the Z-direction.
- This is very convenient with a 3 -dimensional crossing point of 3 wires, so that for example passing a current or voltage down on the Y path can cause the element to move down, passing a current or voltage up on the Y path can cause the element to move up, etc.
- One of the preferable ways of accomplishing this is using for example wires made of Bucky tubes, and at each crossing point the cell is made for example by a Bucky ball, preferably chemically fused to the tubes, and inside this Bucky ball there is a preferably small element, such as an ionized atom or atoms or molecule or molecules, that can respond to electric or magnetic fields and then move to the required side within the Bucky ball, and stay there by Van der Waals and/or similar forces. More details of this embodiment are shown in reference to Fig. 4.
- a memory structure that does not have problems of cross-talk, so that the number of wires used on the same matrix in not limited by such problems. This is accomplished for example by using wires that are far enough from each other and with no borderline electrical states, and therefore no cross-talk.
- the memory cell is approached by an electric field from the nearby wires, so that only the intended cell gets a field strong enough for a change to happen. So at each junction either a cell is affected or not, but no electric current can leak to other wires. This is like creating an AND gate at each junction.
- the AND gates are ternary AND gates.
- the ball or whatever other element is used as the cell
- the ball is preferably for example surrounded by short electrically insulating nano-tubes or by any other electrically insulating atoms or molecules (such as for example by covering the Bucky balls with condensed silicon vapors or any other means or materials), or, for example, the ball itself is made insulating, for example by stuffing it with 6 atoms of an Alkali metal, or any combination of these solutions.
- Other methods of creating AND gates might also be used, such as for example building them from diodes based on conducting, semi-conducting, and nonconducting nano-elements, but that would make the structure less efficient, with more elements needed for each cell.
- Another variation is to bombard for example Bucky tubes with various atoms or molecules and thus create more easily a moving element within the Bucky tube. If more than one element enter the tube or the ball, it might still work OK. On the other hand, since the internal moving element is preferably with an electric charge and/or can be magnetically charged, this might prevent more than one element of the same charge from entering the same place. Of course, other materials and structures may also be used as they become available. Another problem is how to create longer nano- tubes for the wires.
- nano-Velcro which means short twisted nanotubes that are supposed to connect to each other in a chain formation, as other researchers are tying, it might be possible to chemically glue together for example short Bucky Tubes of 300 micrometer.
- Nano-tubes for example with Cobalt and/or other impurities, which makes them magnetizeable, and then use a magnetic field in order to control their orientation and positioning (or use an electrostatic field for this, or both and/or for example ultrasonic acoustic waves), and then for example use holograms or extreme UV lithography in order to create masks or wave-guides for them to align in the required shape, and then bind them together, preferably by chemical means, for example with gold atoms.
- a mask based on extreme UV lithography can create a channel 20 nanaometeres wide, which is just 5 times wider than a 4-nano diameter Bucky-tube.
- Another variation is to align the Bucky tubes in the same direction (for example by electromagnetic fields or electrostatic charge) and condense them in a small elongated space (such as with the extreme UV mask or by other means), and then bombard them for example with a beam of strong energy additional Bucky tubes or bucky balls or other carbon particles or atoms, which can make them fuse together, facing the desired direction, and/or apply for example a large atmospheric or mechanical pressure on them with or without additional heating.
- Another possible variation is for example condensing the Graphite vapors between two or more electrodes in a strong electrical field which concentrates them in the same area, which can increase the chance of getting longer and thicker Bucky tubes.
- nano-wires when a long mask is used, preferably it is either a very long mask, or the forming nano-wire is preferably pulled to one side in the appropriate speed for example by mechanical forces and/or magnetic and/or electric forces (for example spinning it on a wheel), so that the newly added nanotubes are always added near the end of the wire.
- mechanical forces and/or magnetic and/or electric forces for example spinning it on a wheel
- nanotubes are always added near the end of the wire.
- other types of nano wires apart from Bucky tubes, may also be used as they become available.
- FIG. 5 shows also an intermediate embodiment (shown in Figs. 5 and 5a) that combines the present day silicon memory cells (which are today typically each a square of 120x120 nanometers and will be later for example 20-30x20-30 by use of extreme UV lithography) with using a large number of Bucky balls per cell, so that much more data can be held at each cell.
- Another possible variation, (useful especially until longer Bucky tubes are available) is to use for example 1 or more separate 2-dimensional or 3 -dimensional matrices of nano-tube wires, within each area of a current-size memory cell. In this case, preferably the inner matrix contains also the logic for accessing it from outside the cell. This variation is shown in Fig. 6.
- Fig. 1 is a schematic illustration of a typical structure of a Bucky ball.
- Fig. 2 is a schematic illustration of the typical structures of a few types of Bucky tubes.
- Fig. 3 is an illustration of a preferable way of using flat connectors on the surfaces of a 3-d chip.
- Fig. 4 is an illustration of a Bucky ball containing an inner moveable element.
- Figs. 5 and 5a are illustrations of a few preferable ways of using a large group of Bucky balls in combination with current memory technology.
- Fig. 6 is an illustration of a preferable way of using a 2-dimmensional or 3- dimensional nano-matrix within each cell of current memory size
- Fig. 7 is an illustration of a preferable example of a mask helping to create larger macro-size wires based on Bucky tubes.
- nano-structures are described with reference mainly to Bucky Balls and Bucky tubes, this invention is not limited to this kind of nano- structures, and can be used also with other types of nano-structures, in other shapes and/or other materials, as they become available.
- FIG. 1 we show an illustration of the structure of a C60 Bucky ball (11), made of carbon atoms with surfaces of hexagons and pentagons.
- the Bucky ball has a diameter of about 1 nano-meter and can trap small atoms or molecules within the inner space of the ball, however a strong force is needed to overcome atomic resistance forces for passing through between the atoms of the ball's envelope.
- impurities such as Alkali metals for even better conductivity, or Cobalt for magnetizability, they typically combine with a few specific sites on the surface of the ball.
- Fig. 2 we show an illustration of the typical structures of a few types of Bucky tubes, with a cross-section of their pattern at the side.
- Single- wall Bucky tubes (such as tube 'a') are typically with a diamater of about 4 nanometers and multi-wall tubes can be for example 20 nanometers in diameters.
- the length can be any length but in practice most are between a few dozens of nanometers to about 300 micron, and attempts are being made to find out why their growth typically doesn't go beyond that with the creation methods that are used today.
- Their electrical conductivity depends on the tube's diameter and on the chiral angle between the nanotube's axis and the zigzag direction. Tubes with straight lines of hexagons (like a) are great conductors, whereas tubes with a zigzag pattern are typically semiconductors.
- FIG. 3 we show an illustration of a preferable way of using flat connectors (32) on the surfaces of a 3-d chip (31).
- flat connectors 32) on the surfaces of a 3-d chip (31).
- the closing parts contain springs on their other sides for improving the stability.
- the closing envelope can contain for example one or more heat sinks or one or more of the planes, or for example one or more of the external planes of the cube can be connected to one or more heat sinks instead of the electrical connectors.
- the hit sinks take advantage or their high thermal conductivity.
- Another possible variation is to add for example special layers of Bucky tubes and/or other good heat conductors in various places in the 3- D chip for cooling.
- Another possible variation is to add for example a few small preferably very precise small or elongated protrusions and/or sockets in a preferably small number of places, in one or more of the planes, to make sure the cube sits in place.
- the illustration shows only a relatively small number of squares for the sake of clarity, but in reality it can be even hundreds or more squares per cube.
- extreme- UV lithography of for example near 20-30 nano is already beginning to become available, it can be used to create even more complex integrated circuits that will preferably interface more easily with the nanotubes within the chip, for example by using a few delta areas in which for example 4- nano wide tubes are spread a little apart from each other to interface with the (for example) 20 nano wires of the Integrated circuit.
- These solutions can be used also independently from other features of this invention and can be used also for other types of 3 -dimensional chips - not just memory chips and not even just nano-chips.
- FIG. 4 we show an illustration of a Bucky ball (41) containing an inner moveable element (42) that can take for example 1 of 6 states: Up on the X-direction, down on the X-direction, up on the Y-direction, down on the Y-direction, up on the Z-direction, and down on the Z-direction.
- This is very convenient with a 3 -dimensional crossing point of 3 wires, so that for example passing a current down on the Y path can cause the element to move down, passing a current up on the Y path can cause the element to move up, etc.
- one of the preferable ways of accomplishing this is using for example wires made of Bucky tubes, and at each crossing point the cell is made for example by a Bucky ball, and inside this Bucky ball there is a preferably small element, such as for example an ionized atom or atoms or molecule or molecules, that can respond to an electric charge and then move to the required side within the Bucky ball, and stay there by Van der Waals and similar forces.
- this atom or atoms or mulecule
- this atom is for example an alkali metal, such as Lithium, Sodium, or potassium, which are small and relatively easy to ionize.
- the Bucky ball's envelope is first filled up with this same element as an impurity, so that it can't absorb it anymore, so that for example if the Bucky ball can absorb a maximum of 6 Potassium atoms, then preferably it is filled up with these before the element is thrown into the ball.
- the moving element, the Bucky ball, and/or at least the part of the Bucky wire closest to it contain also some impurity such as Iron or Cobalt, so that they are also easily magnetizeable.
- 6 states is just a convenient example, and other numbers of states can also be used. If, instead, a 2-dimensional memory array is used, then for example 4 discrete states could be most natural.
- Each memory cell (51, 51a) contains a group of Bucky balls (52) (and/or for example Bucky tubes) which are coupled to the cell's surface for example by glue or by chemical means such as fluor molecules.
- the memory cell (51) is prefereably created by conventional lithography methods (and, as soon as extreme UV methods become more available, by extreme UV lithography), and the Bucky balls or tubes are added to the cell's surface preferably also during the lithography process, in order to be able to control where they are going (for example by a combination of electrical charge and/or magnetic fields, an appropriate mask, and chemical reactions).
- the balls (or tubes) can be for example more or less evenly distributed on the cell's surface, or more concentrated near the cell's center. They may be attached directly to the silicon surface, or an additional intermediate layer of material can be used between them and the surface.
- the number of balls per square is controlled as much as possible so that this number is more or less the same in all the cells.
- the mass of balls (or tubes) attached to the cell's surface can then for example be magnetized (if they contain also for example some Cobalt impurity) or electrically charged to various degrees (for example 10 possible values, or 100, etc.), and then when the value is read it is determined statistically.
- Another variation is using some chemical or mechanical interaction with the balls, so that, for example, on the right and left side of the silicon square are small plates of one material (53a and 53b) (or other shapes) and on the other 2 opposite sides are similar plates (or other shapes) of another material (54a and 54b), so that each of the two materials has for example different electrical and/or magnetic qualities, such as, for example, copper and beryllium.
- the values of the cell are created for example by bombarding the Bucky balls by different amounts of beryllium and copper (applied by passing a current in the appropriate direction, in a way somewhat similar to electrolysis).
- Another possible variation is for example making the Bucky balls or tubes more or less conducting by similarly changing the amount of Alkali metals absorbed by each. (If actual current is needed, then the wires have to actually touch the cell, so preferably also AND gates are used, so that, for example, all the X-wires are attached the right legs of the AND gates and all the Y- wires are attached to the left legs of the AND gates).
- the value of the cell can then be read for example by checking the magnetic or electrical charge of the group of Bucky balls, or by using an additional plate above the square which bombards the balls form above, and then the number of atoms hitting the silicon from above affect the electrical value that the silicon surface gets.
- Another variation is using atoms of a material of which only one atom can be absorbed in each Bucky ball, so that, for example, the number of balls that contain the material can represent discrete values of the memory cell. This can improve the reliability of deciding the exact value when reading the cell.
- Other variations are also possible in which the writing is irreversible, like for example in writeable CD-ROMs. Of course, various combinations of the above variations can also be used. Of course smaller or larger external memory cells can also be used.
- Fig. 6 we show an illustration of a preferable way of using a 2- dimmensional or 3 -dimensional nano-matrix within each cell of current memory size. This is somewhat similar to the embodiments described in reference to Figs. 5 and 5a, except that inside the normal-size memoiy cell, instead of a bunch of Bucky balls or Bucky tubes which are not individually addressable, the cell (61) preferably contains a two or three dimensional inner matrix (62) of nano-cells, which are preferably individually addressable through a logic unit (63).
- the electric lines that reach the cell (61) cany also some data, for example through fast pulses, that tell the logic unit (63) which individual inner cell or group or range of cells it wishes to access (for example by giving it 2 or 3 coordinates of the individual inner cell, or the coordinates for a range of cells, so that for example a large group of cells can be read or written simultaneously).
- More than one nano-matrix per cell can also be used.
- the nano-matrices preferably including also their logic units already attached to them, are preferably first constructed separately in bulk quantities, and are then inserted into the cells for example as a cloud during the lithography process.
- each normal-size memory cell contains inside one or more small nano-RAM chips or nano-RAM arrays.
- This internal chip can be for example of any of the possible variations described in this invention.
- This inner chip's logic unit can communicate with the cell for example through an electric or magnetic field, or by other means, such as photons.
- the inner nano-cells can be, again, either binary, or of more than 2 states.
- Another variation is that, for example, instead of requesting individual internal cells, the inner matrix and logic are able to store and extract an exact number varying for example from 0 to many millions (representing, for example, 16 data bytes), however this is less flexible and less efficient than the previous version.
- FIG. 7 we show an illustration of an example of a mask (71) helping to create larger macro-size wires based on Bucky tubes (72) that are condensed in the mask.
- the mask is quite wide compared to the Bucky tubes shown, but in reality it can be much closer to their width, as explained in clause 5 in the patent summary.
- many such elongated masks can be used for example side by side, in order to create many bucky wires at the same time.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002222474A AU2002222474A1 (en) | 2000-12-11 | 2001-12-11 | Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers |
CA002431364A CA2431364A1 (en) | 2000-12-11 | 2001-12-11 | Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers |
US10/457,388 US20030218927A1 (en) | 2000-12-11 | 2003-06-10 | RAM memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL14022900A IL140229A0 (en) | 2000-12-11 | 2000-12-11 | Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers |
IL140229 | 2000-12-11 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US10/457,388 Continuation-In-Part US20030218927A1 (en) | 2000-12-11 | 2003-06-10 | RAM memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers |
Publications (2)
Publication Number | Publication Date |
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WO2002048822A2 true WO2002048822A2 (en) | 2002-06-20 |
WO2002048822A3 WO2002048822A3 (en) | 2002-10-17 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/IL2001/001146 WO2002048822A2 (en) | 2000-12-11 | 2001-12-11 | Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers |
Country Status (4)
Country | Link |
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AU (1) | AU2002222474A1 (en) |
CA (1) | CA2431364A1 (en) |
IL (1) | IL140229A0 (en) |
WO (1) | WO2002048822A2 (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2278013A (en) * | 1993-05-10 | 1994-11-16 | Hitachi Europ Ltd | Forming nanoscale conductive patterns on substrates |
US5956172A (en) * | 1995-05-08 | 1999-09-21 | 3D Technology Laboratories, Inc. | System and method using layered structure for three-dimensional display of information based on two-photon upconversion |
US6016269A (en) * | 1998-09-30 | 2000-01-18 | Motorola, Inc. | Quantum random address memory with magnetic readout and/or nano-memory elements |
US6034883A (en) * | 1998-01-29 | 2000-03-07 | Tinney; Charles E. | Solid state director for beams |
-
2000
- 2000-12-11 IL IL14022900A patent/IL140229A0/en unknown
-
2001
- 2001-12-11 AU AU2002222474A patent/AU2002222474A1/en not_active Abandoned
- 2001-12-11 CA CA002431364A patent/CA2431364A1/en not_active Abandoned
- 2001-12-11 WO PCT/IL2001/001146 patent/WO2002048822A2/en not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2278013A (en) * | 1993-05-10 | 1994-11-16 | Hitachi Europ Ltd | Forming nanoscale conductive patterns on substrates |
US5956172A (en) * | 1995-05-08 | 1999-09-21 | 3D Technology Laboratories, Inc. | System and method using layered structure for three-dimensional display of information based on two-photon upconversion |
US6034883A (en) * | 1998-01-29 | 2000-03-07 | Tinney; Charles E. | Solid state director for beams |
US6016269A (en) * | 1998-09-30 | 2000-01-18 | Motorola, Inc. | Quantum random address memory with magnetic readout and/or nano-memory elements |
Also Published As
Publication number | Publication date |
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WO2002048822A3 (en) | 2002-10-17 |
AU2002222474A1 (en) | 2002-06-24 |
IL140229A0 (en) | 2002-02-10 |
CA2431364A1 (en) | 2002-06-20 |
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