WO2002049095A1 - Wafer carrier - Google Patents

Wafer carrier Download PDF

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Publication number
WO2002049095A1
WO2002049095A1 PCT/JP2000/008767 JP0008767W WO0249095A1 WO 2002049095 A1 WO2002049095 A1 WO 2002049095A1 JP 0008767 W JP0008767 W JP 0008767W WO 0249095 A1 WO0249095 A1 WO 0249095A1
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WO
WIPO (PCT)
Prior art keywords
wafer
teeth
wafers
carrier
inner peripheral
Prior art date
Application number
PCT/JP2000/008767
Other languages
French (fr)
Japanese (ja)
Inventor
Toshio Ishikawa
Original Assignee
Dainichi Shoji Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainichi Shoji Kabushiki Kaisha filed Critical Dainichi Shoji Kabushiki Kaisha
Priority to PCT/JP2000/008767 priority Critical patent/WO2002049095A1/en
Publication of WO2002049095A1 publication Critical patent/WO2002049095A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

Definitions

  • the present invention relates to a structure of a wafer carrier for holding, carrying, and transporting a plurality of wafers such as silicon wafers so as not to contact each other.
  • Wafers such as silicon wafers are stored in a carrier called a wafer carrier (or wafer set) and transported and loaded into various semiconductor manufacturing equipment. Main items such as the number of wafers per wafer, shape, dimensions, etc.
  • each wafer 13 is held in an arc shape.
  • Each wafer 13 is held horizontally or vertically in a state of being parallel to each other. In the horizontal state, each wafer 13 is placed in front of the pocket 9 from the near side (from the substantially U-shaped opening side). ) Pushed into the back and stored, and taken out from the back to the front.
  • the wafer carrier 11 for storing the wafer 3 having a diameter of 200 mm has a storage number of 25, and the interval L between the pockets 9 for storing is 6.35 mm.
  • Silicon wafers are constantly increasing in diameter in order to produce large quantities of semiconductor elements called chips at once and reduce costs.
  • semiconductor devices have always required higher integration, lower power consumption, higher speed, and smaller size. Is required.
  • the miniaturization of semiconductor elements has led to the formation of semiconductor circuit sandwich patterns and miniaturization of packages.
  • CSP chip size package
  • a semiconductor element is bonded to a lead frame, the bonding pad is connected to the lead frame with a wire (wire-to-bonding), the element is sealed with resin, the lead frame is cut, and the terminal is bent.
  • Package for example, what is called wafer level C, S, or P, first performs a grinding process (back grind) to cut the back surface of the wafer as thinly as possible, and then, before cutting each chip, Process for forming insulators, buffers, conductive areas, etc. Therefore, a wafer having a smaller thickness than before must be handled by the conventional carrier.
  • the conventional wafer carrier 11 is used in the first half of a plurality of processes constituting a semiconductor manufacturing process, that is, a process until a plurality of semiconductor circuits are formed on the surface of the wafer 13. It is standardized for the purpose.
  • a grinding (back-grinding) step of shaving the back surface of the wafer 13 after the completion of the preceding step, and further, before cutting into chips It is not intended to be used for a thinned wafer 13 in a forming process for forming an insulator, a buffer, a conductive region, and the like on a chip surface.
  • a circular thin plate-shaped tool called an end effector 11 is used to support the wafer 13 in and out.
  • the distance L between the held wafers 3 is larger than the thickness T (for example, 1.8 to 2.0 mm) of the end effector 11. is not. Further, it must be larger than the sum of the deflection ( ⁇ 1, ⁇ 2) of the wafer 13 due to its own weight and the size of the area size P for the pickup for lifting the wafer 13.
  • the wafer 1 was supported by the downward warp ⁇ 1 in the center portion in the left-right direction of the wafer when viewed from the loading / unloading direction, and the end effect 11-1. There is a sag ⁇ 2 at both ends in the state.
  • the end effector 11 is inserted between the wafers 13 and is brought into contact with the lower surface of the wafer 13 to raise the warp ⁇ 1 to eliminate the warp ⁇ 1, and further reduce the warp ⁇ 2
  • the contact with the tooth 7 disappears by lifting up by the dimension of, and it is necessary to be lifted up by P in order to leave the tooth 7 sufficiently. Therefore, the spacing L dimension of wafer 3 is
  • the interval between the teeth 7, the interval between the pockets 9, and the interval L between the held wafers 13 are, for example, 6.35 mm.
  • the conventional wafer carrier 11 is used for a thinned wafer 13 and used, for example, in the forming process for forming the insulator, the buffer, and the conductive region, the wafer 3 becomes thin.
  • the downward warpage ⁇ 1 when held horizontally in the pocket 9 is increased as compared with the conventional thick wafer.
  • the thickness of a wafer and an example of this warpage 1 are as follows.
  • This ⁇ 1 was measured in the left-right direction and the center in the front-rear direction.
  • the clearance L between the pockets 9 was increased to eliminate the above-mentioned problems in holding the thinned wafer 3 on the wafer carrier 1.
  • the distance between the held wafers 13 was increased.
  • the inner wall surface of the pocket 9 formed between the teeth 7 is flat and is called a pocket flat nest 13.
  • the tongue 13 is small (for example, 1.8 to 2.2 mm), so that the area size P for the big-up is also small (for example, 2.0 to 2.4 mm).
  • the area dimension P for pick-up is larger than the pocket flatness 13 described above because the tooth 7 has a substantially corrugated cross section cut in the alignment direction and is held at the tip of the peak. It is for doing. -And if there is a large value of the sag ⁇ 2, both ends of the wafer 13 will be held diagonally in the pockets 9 and therefore the pocket dimensions at the tip of this chevron will not be fully used, and more and more Area size P for big-up becomes smaller Met.
  • the present invention has been made in order to solve the above-described problems, and by storing a wafer having a small thickness, by reducing the downward warpage (SAG) ⁇ 1 of the wafer. It is an object of the present invention to enable a robot or a human to easily and stably transfer a wafer. Disclosure of the invention
  • the invention for achieving the above object is the following invention.
  • a first invention is a wafer carrier having the following configuration for storing and transporting a wafer.
  • a plurality of wafers are provided on the inner peripheral wall of the wafer-one carrier so as to hold a plurality of the wafers in parallel and separate from each other so that they can be taken in and out from the near side, and hold the peripheral edge of each wafer-side from the left and right.
  • the teeth are provided on the inner peripheral wall of the wafer-one carrier so as to hold a plurality of the wafers in parallel and separate from each other so that they can be taken in and out from the near side, and hold the peripheral edge of each wafer-side from the left and right.
  • a c is a vertical cross-sectional shape of the teeth group, has a continuous waveform near the inner peripheral wall of the wafer one carrier, in the protruding portion, so as not to interfere with the end effector one or wafer one that is put in and out.
  • a second invention is the wafer carrier according to claim 1, wherein the arc-shaped inner peripheral edge portion is symmetrical on a back side and a near side.
  • a third invention is the wafer carrier according to claim 2, wherein the interval between the tips of the protrusions formed on the left and right is not more than 90 mm and not less than 15 mm.
  • a fourth invention is a wafer carrier having the following configuration for storing and transporting a wafer.
  • a plurality of wafers are provided on the inner peripheral wall of the wafer-one carrier so as to hold a plurality of the wafers in parallel and separate from each other so that they can be taken in and out from the near side, and hold the peripheral edge of each wafer-side from the left and right.
  • the teeth are provided on the inner peripheral wall of the wafer-one carrier so as to hold a plurality of the wafers in parallel and separate from each other so that they can be taken in and out from the near side, and hold the peripheral edge of each wafer-side from the left and right.
  • the vertical cross-sectional shape of the teeth group in the vicinity of the inner peripheral wall of the wafer and the carrier, has a continuous waveform, and the valley of the waveform has a flat portion having a dimension of 4 mm or more, . Vertical cross-sectional shape within 5 mm.
  • FIG. 1 is a perspective view of a wafer carrier according to one embodiment of the present invention.
  • FIG. 2 is a vertical cross-sectional view showing a state in which the wafer / carrier of FIG. 1 is divided into front and rear portions.
  • Fig. 3 (A) is a horizontal sectional view of Fig. 1, (B) is a partially enlarged view of a 0-B section of (A), and (C) is a partially enlarged view of a 0-C section of (A). It is.
  • FIG. 4 is a plan view of an end effector used for taking a wafer in and out of the wafer carrier of FIG.
  • FIG. 5 is a horizontal sectional view showing another embodiment.
  • FIG. 6 is a front view of a conventional wafer-one carrier.
  • FIG. 7A is a horizontal sectional view of FIG. 5, and FIG. 7B is a partially enlarged view of the 0-B section of FIG.
  • FIG. 8 is a vertical cross-sectional view that emphasizes the behavior of the wafer when the wafer is taken in and out of the wafer by the end effector.
  • the wafer carrier 121 of this embodiment can hold a plurality of disc-shaped wafers 123 horizontally.
  • a description will be given of a state in which a wafer 23 is taken in and out from the near side (the right side in FIG. 1). That is, the wafer carrier 21 is provided on the side walls 25 erected on the left and right, the upper horizontal member 27 and the lower horizontal member 29 connecting these side walls 25, and the left and right side walls 25. And 30 teeth.
  • the side wall portion 25 has a flat plate portion 31 having a linear cross section on the front side and an arc portion 33 on the back side, and both 31 and 33 are separately formed and screwed on the divided surface. Stopped at 3 4 As a result, the left and right side walls 25 are paired to form a substantially U-shaped flat surface. Due to the U-shape, a part of the inner peripheral wall 35 for accommodating the disc-shaped wafer 23 is formed, and interference between the wafer 23 to be taken in and out and the side wall 25 is avoided. Can be In the arc portion 33, a window 37 is formed in the center portion, and the teeth 30 are exposed. The rear end of the arc portion 33 is bent rearward to form a bent portion 39.
  • the bent portions 39 of the left and right side wall portions 25 are separated from each other, and are open during the separation, so that the teeth 30 are exposed.
  • the side wall part 25 has a leg part 41 protruding left and right at a lower part, and stabilizes the entire wafer-carriage-one 21.
  • the teeth 30 are provided to hold a plurality of wafers 23 in parallel apart from each other and to allow the wafers 23 to be taken in and out from the near side.
  • the side walls 25 forming the inner peripheral wall 35 of the wafer carrier 21 are provided. It is fixed to the inner surface of.
  • the teeth 30 provided on the left and right side walls 25 form a pair and hold the peripheral edge of each wafer 23 from the left and right.
  • Each tooth 30 holds the left and right peripheral portions of each wafer 23 on the front side as well as the back side from the center of the wafer 23, and thus the two sides (4)
  • the inner peripheral edge 47 of an arc shape for holding the peripheral edge of the wafer 23 has substantially the same length, and is thus symmetrical between the back side and the near side. I have.
  • the back side divided portion 43 is fixed to the flat plate portion 31 and the bent portion 39 across the window 37 portion.
  • the near side divided portion 47 is fixed to the flat plate portion 31. Further, the near side divided portion 47 forms a protruding portion 49 having a protruding shape.
  • the shape has a continuous waveform (FIG. 3 (B)), and the protruding portion 49 has an intermittent shape so as not to interfere with the end effector and the wafer 23 which are taken in and out (FIG. 3 (C)).
  • the distance between the tips of the protrusions 49 formed on the left and right is 15 mm or more within 90 mm.
  • the distance L between the teeth 30 is 6.35 mm as in the conventional case.
  • the dimension F of the flat part called pocket flatness of the pocket 51 formed by the valleys of the waveforms of the continuous waveform cross-sections of the group of teeth 30 is 3 mm or more and 4.5 mm or less.
  • the end effector 53 shown in FIG. 4 is used for loading and unloading the wafer 23.
  • the end effector 53 has a ring-shaped portion 55 with an open end, and a grip portion 59 is formed on the opposite side of the opening 57.
  • the end effector 53 is inserted between the wafers 23 and brought into contact with the lower surface of the wafer 23. And lift. Then, first, the wafer is lifted up by the dimension of the warp 1, and the warp 1 disappears, and the wafer 23 becomes flat.
  • the protrusions 49 formed on the teeth 30 hold the wafer 23 symmetrically not only on the back side but also on the front side, so that the warp ⁇ 1 on the front side is smaller than in the conventional asymmetric case. It can be avoided that it grows larger.
  • the teeth 30 do not interfere with the end effector 53 because the cross-section of the protrusions 49 has an intermittent shape at the protruding portions 49, and therefore, the protruding portions 49 are sufficiently positioned on the near side. It is possible to enlarge the part that holds the wafer 23. Therefore, the near-side warp ⁇ 1 can be further reduced.
  • the warp ⁇ 1 can be made sufficiently small by keeping the distance between the front and rear ends of the protruding portions 49 within 90 mm, thereby reducing the distance between the held wafers and the outer dimensions of the wafer carrier. It is also possible to leave it unchanged.
  • the distance between the tips is set to be 15 mm or more, the gripping portion 59 of the end effector that passes through the space does not need to be very thin, and the strength of the gripping portion 59 may be insufficient. Can be eliminated.
  • This 15 mm limit is also required in relation to other equipment. That is, the wafer carrier 21 is erected, whereby the wafer 23 is erected vertically, the opening of another apparatus is positioned below the wafer carrier 21, and the roller 1 is attached to the wafer 2. In some cases, the wafer is rotated by contacting the lower part of the wafer 3 and the wafers 23 are rotated to align the notches on each wafer 123. In order to avoid interference with 49, the spacing should be at least 15 mm.
  • the contact with the teeth 23 is removed by lifting the size of the saucer 2.
  • the protruding portion 49 has an intermittent shape in cross section, it does not interfere with the end effector 53, so that a wide end effector 53 can be used, and thus the protrusion ⁇ 2 Can be reduced.
  • the warp 1 and the sag ⁇ 2 can be reduced, the distance L between the wafers 23 can be reduced.
  • the area dimension P for the pickup must have a sufficiently large value so as not to come into contact with the upper teeth 30.
  • the sag ⁇ 2 is a large value, both ends of the wafer 23 will be held diagonally in the pockets 51 of the teeth 30, and the dimensions of the pockets 51 will not be sufficiently used during pickup.
  • the dimension F of the flat portion of the pocket 51 is increased to 3 mm or more so that the dimension of the pocket can be sufficiently increased. It can be used to increase the area size P for pick-up.
  • the teeth 30 can be sufficiently formed even if the interval L between the teeth 30 is set to 6.35 mm as in the conventional case. That is, dimensions If F is 4.5 mm, the thickness of teeth 30 is
  • the thickness required for the flow of the resin in the case of injection molding with a resin and the thickness required for the strength in the case of roll molding with a metal can be satisfied.
  • a completely dedicated wafer a carrier 21 is used separately from the conventional wafer carrier 11; in other embodiments, the conventional wafer carrier 11 is used. There may be.
  • a thin arc-shaped fitting tooth 61 formed separately is fitted into the tooth 7 of the conventional wafer carrier 11, and the wafer 1 3 may be held.
  • the conventional wafer / carrier 11 used is for a large-sized wafer.
  • FIG. 5 the same parts as those in FIG. 3 are denoted by the same reference numerals.
  • the warp ⁇ 1 is reduced on the front side. It is possible to avoid further increase in size, and to reduce the problem of a decrease in the number of stored sheets and the adverse effect on the crystal.
  • the wafer carrier it is possible to avoid changing the distance between the held wafers and the outer dimensions of the wafer carrier. In the latter half of the process, it is possible to share the wafer and carrier used. This makes it possible to use equipment used in the first half of the process, such as insulators, buffers, and conductive area formation devices, in the second half of the process without much modification. Can be reduced. In addition, the downward warpage ⁇ 1 that has increased on the front side of the wafer can be reduced, and physical and mechanical adverse effects on crystals on the surface of the wafer can be suppressed. Also, since the teeth have an intermittent cross section at the protruding part, use a wide end effector so that the end effector and the wafer do not interfere with the teeth when inserting and removing the wafer. Therefore, the size of the drop 2 can be reduced. In addition, the protrusion can be made sufficiently large on the near side, and the portion for holding the wafer can be made large, so that the warpage ⁇ 1 on the near side can be reduced.
  • the flat portion having the wave-shaped valley portion forming the pocket has By increasing the dimensions of the important parts, the dimensions of the pocket can be used sufficiently, and the area dimension ⁇ for the pickup can be increased.
  • Wafer carrier with the following configuration for storing and transporting wafers o
  • a plurality of wafers are provided on the inner peripheral wall of the wafer and one carrier to hold a plurality of the wafers in parallel at a distance from each other so that they can be taken in and out from the near side, and a plurality of wafers holding the peripheral edge of each wafer from the left and right. Teeth and
  • a protruding portion formed on each of the teeth and having an arc-shaped inner peripheral portion to hold the left and right peripheral portions of the respective wafers not only on the rear side but also on the near side from the center of the wafer;
  • the vertical cross-sectional shape of the teeth group which has a continuous waveform near the inner peripheral wall of the wafer carrier 1 and the projecting portion does not interfere with the end effector or the wafer to be taken in and out.
  • Wafer carrier with the following configuration for storing and transporting wafers.
  • a plurality of teeth provided on the inner peripheral wall of the wafer carrier 1 for holding the plurality of wafers parallel to each other at a distance from each other and allowing the wafers to be taken in and out from the front side, and holding the peripheral edge of each wafer from the left and right.
  • the vertical cross-sectional shape of the teeth group which has a continuous waveform near the inner peripheral wall of the wafer carrier 1.
  • the flat portion of the valley portion of the waveform has a dimension of 3 mm or more and 4. Longitudinal cross section within 5 mm.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A plurality of wafers (23) are held and spaced parallel and can be loaded/unloaded through the front of a carrier. Protrusions (49) having arcuate inner peripheral parts (47) are provided to teeth (30) which are formed on the inner wall of a wafer carrier (21) and which hold the peripheral part of each wafer from the left and right sides. Thereby, wafers are symmetrically held on the back and front sides. As a consequence, when thin wafers are accommodated, downward warp of the wafers is reduced and the work of loading/unloading of a wafer is easy. Each protrusion has a discrete shape in vertical cross section to prevent interference with a wafer being loading/unloading. The size F of the flat part of each valley part of the waving shape in the vertical cross section of the teeth is large so as to increase the size of the pickup area for picking up a wafer.

Description

明細書  Specification
ウェハ一キヤリァー Wafer-to-carrier
技術分野 Technical field
本発明は、 シリコンウェハ一などのウェハ一を複数枚、 互いに接触しないよう に保持して収納し運搬するためのウェハーキヤリア一の構造に関する。 技術背景  The present invention relates to a structure of a wafer carrier for holding, carrying, and transporting a plurality of wafers such as silicon wafers so as not to contact each other. Technology background
シリコンウェハーなどのウェハーは、 ウェハーキャリアー (またはウェハ一力 セット) と呼称されるキャリア一に収納され各種半導体製造装置へ運搬、 装填さ れる。 ウェハ—キャリア一は、 ウェハ一収納枚数、 形状、 寸法などの主要項目が Wafers such as silicon wafers are stored in a carrier called a wafer carrier (or wafer set) and transported and loaded into various semiconductor manufacturing equipment. Main items such as the number of wafers per wafer, shape, dimensions, etc.
SEM Iスタンダードに規格化されている (SEMI (Semi conduct or Equipment and Mat er ia l Int ernat i o nal)規格 E l. 7. 94. 200 mm øキャリア一等) 。 Standardized to the SEM I standard (SEMI (Semi conduct or Equipment and Materia l Int erna nal) standard E l. 7. 94. 200 mm ø carrier etc.).
図 6および図 7に示すように、 このようなウェハ一キヤリア一 1によるウェハ 一 3の保持は、 ウェハ一キヤリァ一 1の内周壁 5に整列されて形成される各ティ —ス 7の間で構成されるポケット 9 (図 8) により行われる。 整列したティース 7は、 整列方向に切った断面が略波形 (図 8) をしており、 整列方向から見た図 (平面図 7) において、 略 U字状をしている。 これにより各ウェハー 3の縁部を 円弧状に保持する。 各ウェハ一 3は互いに平行な状態で、 水平あるいは垂直に保 持されるが、 このうち水平な状態では、 各ウェハ一 3はポケット 9に対し手前側 から (略 U字状の開口部分側から) 奥側に押し入れられて収納され、 また、 奥側 から手前側に取り出される。  As shown in FIGS. 6 and 7, such holding of the wafer 13 by the wafer carrier 11 is performed between the respective teeth 7 formed in alignment with the inner peripheral wall 5 of the wafer carrier 11. This is done by pocket 9 (Figure 8), which is configured. The aligned teeth 7 have a substantially corrugated cross section cut in the alignment direction (FIG. 8), and have a substantially U-shape when viewed from the alignment direction (plan view 7). Thus, the edge of each wafer 3 is held in an arc shape. Each wafer 13 is held horizontally or vertically in a state of being parallel to each other. In the horizontal state, each wafer 13 is placed in front of the pocket 9 from the near side (from the substantially U-shaped opening side). ) Pushed into the back and stored, and taken out from the back to the front.
また、 例えば、 直径 200mmのウェハー 3を収納するウェハーキャリア一 1 は、 収納枚数が 25枚であり、 収納を行うポケッ ト 9の間隔 Lは 6.35mmと なっている。 そして、 シリコンウェハーなどは、 チップと呼ばれる半導体素子を一時に大量 に生産しコストを引き下げるため、 常に大口径化が進んでいる。 また、 最近の携帯電話機、 電話、 パソコン、 デジタルカメラなどを代表とする ように電子機器の小型化が進み、 これにあわせて半導体素子も常に、 高集積化、 低消費電力化、 高速化、 小型化が要求される。 特に、 半導体素子の小型化のため に、 半導体回路の挟パターン化、 パッケージの小型化が行われている。 Further, for example, the wafer carrier 11 for storing the wafer 3 having a diameter of 200 mm has a storage number of 25, and the interval L between the pockets 9 for storing is 6.35 mm. Silicon wafers are constantly increasing in diameter in order to produce large quantities of semiconductor elements called chips at once and reduce costs. In addition, the miniaturization of electronic devices, such as recent mobile phones, telephones, personal computers, and digital cameras, has been progressing, and accordingly, semiconductor devices have always required higher integration, lower power consumption, higher speed, and smaller size. Is required. In particular, the miniaturization of semiconductor elements has led to the formation of semiconductor circuit sandwich patterns and miniaturization of packages.
一般に、 半導体素子のパッケージの小型化は、 C S P (chip size package) と呼ばれる。 従来は、 半導体素子をリードフレーム上にボンディングし、 更にポ ンデイングパッドとリードフレームを線でつなぎ (ワイヤ一ボンディングし) 、 樹脂で素子を密閉し、 リードフレームの切断、 端子の折り曲げを行って、 パッケ ージを行う。 これに対し、 例えばウェハ一レベル C , S , Pと呼ばれるものは、 まずウェハ一の裏面を極力薄く削る研削加工 (バヅクグラインド) 工程を行い、 その後、 各チップへ切断する前に、 各チップの表面に絶縁物、 緩衝物、 導通領域 などの形成加工行程を行う。 よって、 従来よりも肉厚の薄いウェハーを従来のゥ ェハーキヤリア一で扱わなければならない。 しかしながら、 本来、 従来のウェハーキャリア一 1は、 半導体製造工程を構成 する複数の工程のうち前半の工程、 すなわちウェハ一 3の表面に複数の半導体回 路を形成するまでの工程で使用されることを目的とし規格化されたものである。  Generally, the miniaturization of a semiconductor device package is called CSP (chip size package). Conventionally, a semiconductor element is bonded to a lead frame, the bonding pad is connected to the lead frame with a wire (wire-to-bonding), the element is sealed with resin, the lead frame is cut, and the terminal is bent. , Package. On the other hand, for example, what is called wafer level C, S, or P, first performs a grinding process (back grind) to cut the back surface of the wafer as thinly as possible, and then, before cutting each chip, Process for forming insulators, buffers, conductive areas, etc. Therefore, a wafer having a smaller thickness than before must be handled by the conventional carrier. However, originally, the conventional wafer carrier 11 is used in the first half of a plurality of processes constituting a semiconductor manufacturing process, that is, a process until a plurality of semiconductor circuits are formed on the surface of the wafer 13. It is standardized for the purpose.
したがって、 前記ウェハレベル C, S , Pを行うため、 前記前工程終了後にゥ ェハ一 3の裏面を削る研削加工 (バックグラインド) 工程、 さらには、 その後に 各チップへ切断する前に、 各チップの表面に絶縁物、 緩衝物、 導通領域などを形 成する形成加工行程において、 薄くなつたウェハ一 3に使用することを目的とし たものではない。  Therefore, in order to perform the wafer levels C, S, and P, a grinding (back-grinding) step of shaving the back surface of the wafer 13 after the completion of the preceding step, and further, before cutting into chips, It is not intended to be used for a thinned wafer 13 in a forming process for forming an insulator, a buffer, a conductive region, and the like on a chip surface.
よって下記のように、 ウェハ一 3の出し入れの際に、 ウェハ一 3の間隔 Lが狭 すぎるという問題を生じる。  Therefore, as described below, there is a problem that the distance L between the wafers 13 is too small when the wafer 13 is taken in and out.
すなわち図 8に示すように、 出し入れには、 ウェハ一 3を支えるためにエンド エフヱクタ一 1 1と呼ばれる円形の薄い平板状の道具が使われる。 そして、 例え ば取り出しの際には、 保持された各ウェハー 3の間隔 L寸法は、 このエンドエフ ェク夕一ト 1 1の厚み T (例えば 1 . 8〜2 . 0 mm) より大きいだけでは十分で はない。 さらに、 ウェハ一 3の自重による撓み (△ 1、 △ 2 ) 、 およびウェハ一 3を持 ち上げるピックァップのための領域寸法 Pの大きさの和よりも大きくなければな らない。 そして橈みには、 ウェハ一 3がポケット 9に水平に保持された状態で、 出し入れ方向から見てウェハーの左右方向中央部分における下方への反り Δ 1と、 ェンドエフヱク夕一 1 1に支持された状態での両端のたれ Δ 2とがある。 That is, as shown in FIG. 8, a circular thin plate-shaped tool called an end effector 11 is used to support the wafer 13 in and out. For example, at the time of unloading, it is sufficient that the distance L between the held wafers 3 is larger than the thickness T (for example, 1.8 to 2.0 mm) of the end effector 11. is not. Further, it must be larger than the sum of the deflection (△ 1, Δ2) of the wafer 13 due to its own weight and the size of the area size P for the pickup for lifting the wafer 13. In the radius, while the wafer 13 was held horizontally in the pocket 9, the wafer 1 was supported by the downward warp Δ1 in the center portion in the left-right direction of the wafer when viewed from the loading / unloading direction, and the end effect 11-1. There is a sag Δ2 at both ends in the state.
つまり、 取り出しを行うためには、 エンドエフェクター 1 1をウェハ一 3の間 に挿入し、 ウェハ一 3の下面に接触させて反り Δ 1の寸法だけ持ち上げて反り△ 1が消え、 さらにたれ△ 2の寸法だけ持ち上げてティース 7との接触が消え、 さ らにティース 7から十分に離れるために Pだけ持ち上げられる必要がある。 した がって、 ウェハー 3の間隔 L寸法は  In other words, in order to perform the removal, the end effector 11 is inserted between the wafers 13 and is brought into contact with the lower surface of the wafer 13 to raise the warp Δ1 to eliminate the warp △ 1, and further reduce the warp △ 2 The contact with the tooth 7 disappears by lifting up by the dimension of, and it is necessary to be lifted up by P in order to leave the tooth 7 sufficiently. Therefore, the spacing L dimension of wafer 3 is
L > △ 1 + Δ 2 + P  L> △ 1 + Δ 2 + P
となる必要がある。 従来は、 各ティース 7の間隔、 ポケット 9の間隔、 および保 持されたウェハ一 3の間隔 Lは例えば 6 . 3 5 m mであった。 ところが、 従来のウェハーキャリア一 1を、 薄くなつたウェハ一 3に用い、 例 えば前記絶縁物、 緩衝物、 導通領域などを形成する形成加工行程で使用する場合 には、 ウェハー 3が薄くなることにより、 ポケット 9に水平に保持された状態で の下方への反り Δ 1が、 従来の厚いウェハーよりも増大してしまう。 種々の条件 である程度異なるが、 ある条件において、 ウェハ一の厚さとこの反り△ 1の例は 以下のようになる。 Need to be Conventionally, the interval between the teeth 7, the interval between the pockets 9, and the interval L between the held wafers 13 are, for example, 6.35 mm. However, when the conventional wafer carrier 11 is used for a thinned wafer 13 and used, for example, in the forming process for forming the insulator, the buffer, and the conductive region, the wafer 3 becomes thin. As a result, the downward warpage Δ1 when held horizontally in the pocket 9 is increased as compared with the conventional thick wafer. Although it differs to some extent under various conditions, under certain conditions, the thickness of a wafer and an example of this warpage 1 are as follows.
厚さ 反り Δ 1  Thickness Warp Δ 1
7 5 0 Λί ΐη 0 . 2 mm
Figure imgf000005_0001
7 5 0 Λί ΐη 0.2 mm
Figure imgf000005_0001
なお、 この Δ 1は左右方向及び前後方向の中央で測定した。  This Δ1 was measured in the left-right direction and the center in the front-rear direction.
そして、 薄型化されたウェハー 3をウェハ一キヤリァ一 1に保持する上での上 記問題点をクリア一するために、 従来はポケット 9の間隔 Lを広くとり、 これに より保持されたウェハ一 3の間隔を広くしていた。 従来の技術 Conventionally, the clearance L between the pockets 9 was increased to eliminate the above-mentioned problems in holding the thinned wafer 3 on the wafer carrier 1. The distance between the held wafers 13 was increased. Conventional technology
( 1 ) しかしながら、 そのようにウェハー 3の間隔 Lを広くとると、 一台のゥェ ハーキャリアー 1におけるウェハー 3の収納枚数が減少していた。 また、 ウェハ —3の間隔 Lが変更されることで、 ウェハ一 3の出し入れを行うロボットの制御 の調整が必要となってしまうものであった。 さらに、 ウェハ一 3の間隔 Lを広く し、 収納枚数を維持しょうとするとウェハーキヤリア一 1の外形寸法が変更され、 ロボットの制御の調整が必要となってしまうものであった。  (1) However, if the distance L between the wafers 3 is widened, the number of wafers 3 stored in one wafer carrier 1 is reduced. In addition, since the interval L between the wafers 3 was changed, it was necessary to adjust the control of a robot that puts the wafer 13 in and out. Furthermore, if the distance L between the wafers 13 is increased to maintain the number of stored wafers, the outer dimensions of the wafer carrier 11 are changed, and the control of the robot needs to be adjusted.
( 2 ) また、 ウェハ一 3の下方への反り厶 1が大きくなると、 ウェハ一 3表面の 曲げ応力が大きくなり、 表面の結晶に物理的、 機械的な悪影響をおよぼすもので あった。 この悪影響は、 ウェハーキャリアー 1の搬送時に内部に保持されたゥェ ハ一 3が上下に振動することで、 さらに大きくなり甚だしい場合には損傷が生じ るものであった。  (2) Further, when the downward warpage 1 of the wafer 13 was increased, the bending stress on the surface of the wafer 13 was increased, which had a physical and mechanical adverse effect on the crystal on the surface. The adverse effect was that the wafer 13 held inside the wafer carrier 1 when the wafer carrier 1 was transferred vibrated up and down, and was further increased, and in severe cases, was damaged.
( 3 ) さらに、 ポケットによるウェハ一 3への接触保持は、 ウェハー 3の中心よ り奥側でのみ行われ、 手前側は出し入れのために接触保持されていない。 このた め反り Δ 1は、 手前側で更に大きくなつてしまう。 従って、 収納枚数の減少や結 晶への悪影響の問題が大きくなつていた。  (3) Further, the contact holding of the wafer 13 by the pocket is performed only on the back side of the center of the wafer 3, and the front side is not contacted and held for taking in and out. For this reason, the warpage Δ 1 is further increased on the near side. Therefore, the problem of a decrease in the number of sheets to be stored and an adverse effect on crystals has been increasing.
( 4 ) また、 各ティース 7の整列方向の断面において、 各ティース 7の間に形成 されるポケット 9の奥側の壁面は、 平らでポケットフラッ トネスト 1 3と呼ばれ るが、 従来はこのポケヅトフラッ トネス 1 3が小さく (例えば 1 . 8〜2 . 2 m m) 、 このためビックアップのための領域寸法 Pも小さく (例えば 2 . 0〜2 . 4 mm) 制限をされていた。  (4) In the cross section of the teeth 7 in the alignment direction, the inner wall surface of the pocket 9 formed between the teeth 7 is flat and is called a pocket flat nest 13. The tongue 13 is small (for example, 1.8 to 2.2 mm), so that the area size P for the big-up is also small (for example, 2.0 to 2.4 mm).
ここで上記するポケヅトフラヅトネス 1 3よりもピックアップのための領域寸 法 Pが大きいのは、 ティース 7を整列方向に切った略波形断面形状が山形をして いて山形の先端部分で保持を行うためである。 - そして、 たれ Δ 2が大きな値で存在すると、 ウェハ一 3の両端はポケット 9に 斜めに保持されることになり、 従ってこの山形の先端部分におけるポケットの寸 法が十分に使えず、 ますますビックアップのための領域寸法 Pが小さくなるもの であった。 Here, the area dimension P for pick-up is larger than the pocket flatness 13 described above because the tooth 7 has a substantially corrugated cross section cut in the alignment direction and is held at the tip of the peak. It is for doing. -And if there is a large value of the sag Δ2, both ends of the wafer 13 will be held diagonally in the pockets 9 and therefore the pocket dimensions at the tip of this chevron will not be fully used, and more and more Area size P for big-up becomes smaller Met.
薄くてたれ Δ 2が大きくなるウェハー 3のピックアップを容易に行うためには、 ウェハー 3の間隔 Lの問題とは別に、 この問題も解決されなければならない。 ( 5 ) たれ Δ 2を小さくするためには、 幅の広いエンドエフェクター 1 1を使用 することが望ましいが、 そうするとエンドエフェクター 1 1と干渉しないように ティース 7の手前側の部分が小さくなつてしまい、 手前側の部分でウェハー 3を 支えて反り Δ 1を小さくすることがあまり出来ない。  In order to easily pick up the wafer 3 that becomes thinner and Δ2 becomes larger, apart from the problem of the distance L between the wafers 3, this problem must be solved. (5) In order to reduce the sag Δ2, it is desirable to use a wide end effector 11, but in this case, the portion on the front side of the teeth 7 becomes small so as not to interfere with the end effector 11. However, it is not possible to support the wafer 3 at the front side and reduce the warpage Δ1.
この発明は、 以上の課題を解決するためになされたものであり、 肉厚の薄いゥ ェハ一を収納した時に、 ウェハーの下方への反り (S A G ) Δ 1を少なくするこ となどにより、 ロボットまたは人手によるウェハーの出し入れ作業を容易かつ安 定的に行えるようにすることを目的とする。 発明の開示  The present invention has been made in order to solve the above-described problems, and by storing a wafer having a small thickness, by reducing the downward warpage (SAG) Δ1 of the wafer. It is an object of the present invention to enable a robot or a human to easily and stably transfer a wafer. Disclosure of the invention
以上の目的を達成するための発明は下記の発明である。  The invention for achieving the above object is the following invention.
第 1の発明は、 ウェハーを収納して運搬するために、 以下の構成を備えたゥェ ハ一キヤリァ—である。  A first invention is a wafer carrier having the following configuration for storing and transporting a wafer.
a . 複数枚の前記ウェハーを互いに離して平行に保持し、 手前側から出し入れ 可能にするため、 前記ウェハ一キャリア一の内周壁に設けられ、 前記各ウェハ一 の周縁部を左右から保持する複数のティースと、 a. A plurality of wafers are provided on the inner peripheral wall of the wafer-one carrier so as to hold a plurality of the wafers in parallel and separate from each other so that they can be taken in and out from the near side, and hold the peripheral edge of each wafer-side from the left and right. And the teeth
b . 前記各ウェハ一の左右の周縁部を、 前記ウェハ一の中心より奥側のみなら ず手前側でも保持するため、 前記各ティースに形成され円弧状の内周縁部を有す る突出部と、 b. A projection formed on each of the teeth and having an arc-shaped inner peripheral edge to hold the left and right peripheral edges of the respective wafers 1 not only on the inner side but also on the nearer side than the center of the wafer 1. ,
c 前記ティース群の縦断面形状であって、 前記ウェハ一キャリア一の内周壁 付近では、 連続する波形を有し、 前記突出部では、 出し入れされるエンドェフエ クタ一やウェハ一に干渉しないように、 断続的な形状を有する縦断面形状。 第 2の発明は、 前記円弧状の内周縁部は、 奥側と手前側で対称である請求項 1 に記載のウェハ一キヤリァーである。 第 3の発明は、 左右に形成される突出部の先端間の間隔は、 9 0 mm以内で 1 5 mm以上である請求項 2に記載のウェハ一キヤリァ一である。 第 4の発明は、 ウェハ一を収納して運搬するために、 以下の構成を備えたゥェ ハ—キヤリァ一である。 c is a vertical cross-sectional shape of the teeth group, has a continuous waveform near the inner peripheral wall of the wafer one carrier, in the protruding portion, so as not to interfere with the end effector one or wafer one that is put in and out. A longitudinal cross-sectional shape with an intermittent shape. A second invention is the wafer carrier according to claim 1, wherein the arc-shaped inner peripheral edge portion is symmetrical on a back side and a near side. A third invention is the wafer carrier according to claim 2, wherein the interval between the tips of the protrusions formed on the left and right is not more than 90 mm and not less than 15 mm. A fourth invention is a wafer carrier having the following configuration for storing and transporting a wafer.
a . 複数枚の前記ウェハーを互いに離して平行に保持し、 手前側から出し入れ 可能にするため、 前記ウェハ一キャリア一の内周壁に設けられ、 前記各ウェハ一 の周縁部を左右から保持する複数のティースと、 a. A plurality of wafers are provided on the inner peripheral wall of the wafer-one carrier so as to hold a plurality of the wafers in parallel and separate from each other so that they can be taken in and out from the near side, and hold the peripheral edge of each wafer-side from the left and right. And the teeth
b . 前記ティース群の縦断面形状であって、 前記ウェハ一キャリア一の内周壁 付近では、 連続する波形を有し、 この波形の谷部が有するフラットな部分の寸法 を、 3 mm以上で 4 . 5 mm以内にした縦断面形状。 図面の簡単な説明 b. The vertical cross-sectional shape of the teeth group, in the vicinity of the inner peripheral wall of the wafer and the carrier, has a continuous waveform, and the valley of the waveform has a flat portion having a dimension of 4 mm or more, . Vertical cross-sectional shape within 5 mm. BRIEF DESCRIPTION OF THE FIGURES
図 1は、 本願発明の 1実施形態に係るウェハ一キヤリァ一の斜視図である。 図 2は、 図 1のウェハ一キヤリァ一を前後に分割した状態として示す縦断面図 である。 図 3は、 (A ) が図 1の水平断面図、 (B ) が (A ) の 0— B断面の 一部拡大図、 (C ) が (A) の 0— C断面の一部拡大図である。  FIG. 1 is a perspective view of a wafer carrier according to one embodiment of the present invention. FIG. 2 is a vertical cross-sectional view showing a state in which the wafer / carrier of FIG. 1 is divided into front and rear portions. In Fig. 3, (A) is a horizontal sectional view of Fig. 1, (B) is a partially enlarged view of a 0-B section of (A), and (C) is a partially enlarged view of a 0-C section of (A). It is.
図 4は、 図 1のウェハーキヤリア一からウェハーを出し入れするために用いる ェンドエフエクタ一の平面図である。  FIG. 4 is a plan view of an end effector used for taking a wafer in and out of the wafer carrier of FIG.
図 5は、 他の実施形態を示す水平断面図である。  FIG. 5 is a horizontal sectional view showing another embodiment.
図 6は、 従来のウェハ一キャリアーの正面図である。  FIG. 6 is a front view of a conventional wafer-one carrier.
図 7は、 (A) が図 5の水平断面図、 (B ) が (A) の 0— B断面の一部拡大 図である。  7A is a horizontal sectional view of FIG. 5, and FIG. 7B is a partially enlarged view of the 0-B section of FIG.
図 8は、 ウェハ一キヤリア一からウェハーをェンドエフエクタ一によって出し 入れする際のウェハーの挙動を強調して示す縦断面図である。 発明を実施するための最良の実施形態  FIG. 8 is a vertical cross-sectional view that emphasizes the behavior of the wafer when the wafer is taken in and out of the wafer by the end effector. BEST MODE FOR CARRYING OUT THE INVENTION
以下に、 本願発明の最良の実施形態の例を図 1乃至図 4において説明する。 な お、 以下の実施形態は本願発明の範囲を限定するものではない。 すなわち、 当業 者であれば本願発明の原理の範囲で、 他の実施形態を採用することが可能である この実施形態のウェハーキャリア一 2 1を、 複数の円盤状のウェハ一 2 3を水 平に保持でき手前側 (図 1右側) からウェハ一 2 3を出し入れする状態で説明す る。 すなわち、 このウェハーキャリア一 2 1は、 左右に立設される側壁部 2 5と、 これら側壁部 2 5をつなぐ上水平部材 2 7と下水平部材 2 9と、 左右の側壁部 2 5に設けられる複数のティース 3 0とから成る。 An example of the best embodiment of the present invention will be described below with reference to FIGS. Note that the following embodiments do not limit the scope of the present invention. That is, Anyone can adopt another embodiment within the scope of the principle of the present invention. The wafer carrier 121 of this embodiment can hold a plurality of disc-shaped wafers 123 horizontally. In the following, a description will be given of a state in which a wafer 23 is taken in and out from the near side (the right side in FIG. 1). That is, the wafer carrier 21 is provided on the side walls 25 erected on the left and right, the upper horizontal member 27 and the lower horizontal member 29 connecting these side walls 25, and the left and right side walls 25. And 30 teeth.
このうち側壁部 2 5は、 手前側の直線的な断面をもつ平板部分 3 1と奥側の円 弧部分 3 3を有し、 両者 3 1、 3 3は別体に成形され分割面においてネジ 3 4で 止められている。 これにより、 左右の側壁部 2 5は、 対になって概略 U字状の平 面形状を構成する。 U字状とすることで、 円盤状のウェハ一 2 3が収納されるた めの内周壁 3 5の一部が構成され、 出し入れされるウェハ一 2 3と側壁部 2 5と の干渉が避けられる。 この円弧部分 3 3は、 中央部分に窓 3 7が形成されティー ス 3 0が露出する。 円弧部分 3 3の後端は、 後方に屈曲し屈曲部分 3 9を形成す る。 この左右の側壁部 2 5の屈曲部分 3 9は、 互いに離れており、 その離れた間 は開放されておりティース 3 0が露出する。 また、 側壁部 2 5は、 下方には、 左 右へ突出する脚部 4 1を有し、 ウェハ一キヤリア一 2 1全体を安定させる。 ティース 3 0は、 複数枚のウェハー 2 3を互いに離して平行に保持し、 手前側 から出し入れ可能にするために設けられ、 ウェハ一キヤリァ一 2 1の内周壁 3 5 を構成する側壁部 2 5の内面に固定される。 左右の側壁部 2 5に設けられるティ —ス 3 0が、 対となって、 各ウェハー 2 3の周縁部を左右から保持する。 各ティ ース 3 0は、 各ウェハ一 2 3の左右の周縁部を、 ウェハ一 2 3の中心より奥側の みならず手前側でも保持するため、 奥側と手前側の二つ (4 3、 4 5 ) に分割さ れ、 ウェハー 2 3の周縁部を保持するための円弧状の内周縁部 4 7はほぼ同じ長 さを有し、 これにより奥側と手前側で対称となっている。  The side wall portion 25 has a flat plate portion 31 having a linear cross section on the front side and an arc portion 33 on the back side, and both 31 and 33 are separately formed and screwed on the divided surface. Stopped at 3 4 As a result, the left and right side walls 25 are paired to form a substantially U-shaped flat surface. Due to the U-shape, a part of the inner peripheral wall 35 for accommodating the disc-shaped wafer 23 is formed, and interference between the wafer 23 to be taken in and out and the side wall 25 is avoided. Can be In the arc portion 33, a window 37 is formed in the center portion, and the teeth 30 are exposed. The rear end of the arc portion 33 is bent rearward to form a bent portion 39. The bent portions 39 of the left and right side wall portions 25 are separated from each other, and are open during the separation, so that the teeth 30 are exposed. In addition, the side wall part 25 has a leg part 41 protruding left and right at a lower part, and stabilizes the entire wafer-carriage-one 21. The teeth 30 are provided to hold a plurality of wafers 23 in parallel apart from each other and to allow the wafers 23 to be taken in and out from the near side. The side walls 25 forming the inner peripheral wall 35 of the wafer carrier 21 are provided. It is fixed to the inner surface of. The teeth 30 provided on the left and right side walls 25 form a pair and hold the peripheral edge of each wafer 23 from the left and right. Each tooth 30 holds the left and right peripheral portions of each wafer 23 on the front side as well as the back side from the center of the wafer 23, and thus the two sides (4) The inner peripheral edge 47 of an arc shape for holding the peripheral edge of the wafer 23 has substantially the same length, and is thus symmetrical between the back side and the near side. I have.
奥側分割部分 4 3は、 窓 3 7の部分にまたがって、 平板部分 3 1と屈曲部 3 9 とに固定される。 手前側分割部分 4 7は、 平板部分 3 1に固定される。 また、 手 前側分割部分 4 7は、 突出した形状の突出部 4 9を形成する。 そして内周壁 3 5 付近、 すなわちウェハ一 2 3の前後方向中心付近では、 ティース 3 0群の縦断面 形状は連続する波形を有し (図 3 ( B ) ) 、 突出部 4 9では、 出し入れされるェ ンドエフエクタ一やウェハー 2 3に干渉しないように、 断続的な形状を有する (図 3 ( C ) ) 。 The back side divided portion 43 is fixed to the flat plate portion 31 and the bent portion 39 across the window 37 portion. The near side divided portion 47 is fixed to the flat plate portion 31. Further, the near side divided portion 47 forms a protruding portion 49 having a protruding shape. In the vicinity of the inner peripheral wall 35, that is, in the vicinity of the center of the wafer 13 in the front-rear direction, the vertical cross section of the teeth 30 group The shape has a continuous waveform (FIG. 3 (B)), and the protruding portion 49 has an intermittent shape so as not to interfere with the end effector and the wafer 23 which are taken in and out (FIG. 3 (C)). ).
また、 左右に形成される突出部 4 9の先端間の間隔は、 9 0 mm以内で 1 5 m m以上とする。  The distance between the tips of the protrusions 49 formed on the left and right is 15 mm or more within 90 mm.
また、 ティース 3 0の間隔 Lは従来と同様に 6 . 3 5 mmとする。 ティース 3 0群の連続する波形断面形状の波形の谷部が形成するポケット 5 1のポケットフ ラットネスと呼ばれるフラットな部分の寸法 Fを、 3 mm以上 4 . 5 mm以内と する。  The distance L between the teeth 30 is 6.35 mm as in the conventional case. The dimension F of the flat part called pocket flatness of the pocket 51 formed by the valleys of the waveforms of the continuous waveform cross-sections of the group of teeth 30 is 3 mm or more and 4.5 mm or less.
ウェハー 2 3の出し入れには、 図 4のェンドエフェクター 5 3が用いられる。 このエンドエフェク夕一 5 3は、 先端が開口したリング状部分 5 5を有し、 開口 5 7と反対側に把持部 5 9が形成される。  The end effector 53 shown in FIG. 4 is used for loading and unloading the wafer 23. The end effector 53 has a ring-shaped portion 55 with an open end, and a grip portion 59 is formed on the opposite side of the opening 57.
[動作および効果] [Action and effect]
保持された複数枚のウェハー 2 3から一枚のウェハ一 2 3を取り出しを行うた めには、 エンドエフェクター 5 3をウェハ一 2 3の間に挿入し、 ウェハ一 2 3の 下面に接触させて持ち上げる。 そして、 まず反り厶 1の寸法だけ持ち上げ、 この 反り△ 1が消えウェハ一 2 3は平らになる。  In order to remove one wafer 23 from the plurality of held wafers 23, the end effector 53 is inserted between the wafers 23 and brought into contact with the lower surface of the wafer 23. And lift. Then, first, the wafer is lifted up by the dimension of the warp 1, and the warp 1 disappears, and the wafer 23 becomes flat.
このとき、 ティース 3 0に形成された突出部 4 9により、 ウェハ一 2 3は奥側 のみならず手前側も対称に保持されるので、 従来の非対称の場合に比べ反り Δ 1 が手前側で更に大きくなつてしまうことを避けられる。 また、 ティース 3 0は突 出部 4 9では、 断面が断続的な形状を有するので、 エンドエフェク夕一 5 3ゃゥ ェハー 2 3と干渉せず、 よって、 突出部 4 9を手前側で十分に大きくでき、 ゥェ ハ一2 3を保持する部分を大きくできる。 よって、 手前側の反り Δ 1をさらに小 さくすることができる。 突出部 4 9の奥側と手前側の先端間の間隔ほ、 9 0 mm以内とすることで反り Δ 1を十分に小さくでき、 これにより保持されるウェハーの間隔やウェハーキヤ リア一の外形寸法を変更しないで済むことも可能である。 また、 先端間の間隔を 1 5 mm以上とすることで、 この間隔の部分を通過する エンドエフェクターの把持部 5 9が、 あまり細くならずに済み、 把持部 5 9の強 度不足の心配を無くすことができる。 また、 この 1 5 mmの制限は、 別の装置と の関係でも要求される。 すなわち、 ウェハーキャリア一 2 1を直立させ、 これに よりウェハ一 2 3を垂直に立て、 ウェハ一キャリアー 2 1の下部に別の装置の口 —ラ一を位置させ、 このローラ一をウェハ一 2 3の下部に接触させて回転し、 こ れにより各ウェハ一 2 3を回転させて各ウェハ一 2 3のノツチと呼ばれる部分を 整列させる作業をすることがあるが、 この口一ラーが突出部 4 9と干渉しないた めにも、 間隔は 1 5 mm以上が必要であると思われる。 At this time, the protrusions 49 formed on the teeth 30 hold the wafer 23 symmetrically not only on the back side but also on the front side, so that the warp Δ 1 on the front side is smaller than in the conventional asymmetric case. It can be avoided that it grows larger. In addition, the teeth 30 do not interfere with the end effector 53 because the cross-section of the protrusions 49 has an intermittent shape at the protruding portions 49, and therefore, the protruding portions 49 are sufficiently positioned on the near side. It is possible to enlarge the part that holds the wafer 23. Therefore, the near-side warp Δ1 can be further reduced. The warp Δ1 can be made sufficiently small by keeping the distance between the front and rear ends of the protruding portions 49 within 90 mm, thereby reducing the distance between the held wafers and the outer dimensions of the wafer carrier. It is also possible to leave it unchanged. In addition, by setting the distance between the tips to be 15 mm or more, the gripping portion 59 of the end effector that passes through the space does not need to be very thin, and the strength of the gripping portion 59 may be insufficient. Can be eliminated. This 15 mm limit is also required in relation to other equipment. That is, the wafer carrier 21 is erected, whereby the wafer 23 is erected vertically, the opening of another apparatus is positioned below the wafer carrier 21, and the roller 1 is attached to the wafer 2. In some cases, the wafer is rotated by contacting the lower part of the wafer 3 and the wafers 23 are rotated to align the notches on each wafer 123. In order to avoid interference with 49, the spacing should be at least 15 mm.
さらに、 たれ△ 2の寸法だけ持ち上げてティース 2 3との接触が消える。 このとき、 突出部 4 9は、 断面が断続的な形状を有するので、 エンドエフェク 夕一 5 3と干渉せず、 したがって幅の広いェンドエフエクタ一 5 3を使用するこ とができ、 よってたれ Δ 2を小さくできる。  Furthermore, the contact with the teeth 23 is removed by lifting the size of the saucer 2. At this time, since the protruding portion 49 has an intermittent shape in cross section, it does not interfere with the end effector 53, so that a wide end effector 53 can be used, and thus the protrusion Δ2 Can be reduced.
その後、 さらにティース 3 0から十分に離れるために Pだけ持ち上げられる必 要がある。  After that, it needs to be lifted by P to get further away from teeth 30.
したがって反り厶 1とたれ Δ 2を小さくできるので、 ウェハー 2 3の間隔 Lに 対し  Therefore, since the warp 1 and the sag Δ2 can be reduced, the distance L between the wafers 23 can be reduced.
L > Δ 1 + Δ 2 + P  L> Δ 1 + Δ 2 + P
を十分に満たすことが可能になる。 Can be sufficiently satisfied.
また、 ピックアップのための領域寸法 Pは、 ウェハ一 3の間隔 Lの問題とは別 に、 上側のティ一ス 3 0と接触しないように十分に大きな値が取れるものでなけ ればならない。 特に、 たれ Δ 2が大きな値で存在すると、 ウェハ一 2 3の両端は ティース 3 0のポケット 5 1に斜めに保持されることになり、 ピックァヅプの際 にポケット 5 1の寸法が十分に使えず、 許容されるビックアップのための領域寸 法 Pが小さくなるが、 この実施形態ではポケット 5 1のフラヅ 卜な部分の寸法 F を、 3 mm以上と大きくすることで、 ポケットの寸法が十分に使え、 ピックアツ プのための領域寸法 Pを大きくできる。  In addition, apart from the problem of the distance L between the wafers 13, the area dimension P for the pickup must have a sufficiently large value so as not to come into contact with the upper teeth 30. In particular, if the sag Δ2 is a large value, both ends of the wafer 23 will be held diagonally in the pockets 51 of the teeth 30, and the dimensions of the pockets 51 will not be sufficiently used during pickup. However, in the present embodiment, the dimension F of the flat portion of the pocket 51 is increased to 3 mm or more so that the dimension of the pocket can be sufficiently increased. It can be used to increase the area size P for pick-up.
また寸法 Fを 4 . 5 mm以内とすることで、 ティース 3 0の間隔 Lを従来と同 様に 6 . 3 5 mmとしても、 十分にティース 3 0を成形できる。 すなわち、 寸法 Fを 4 . 5 mmとすると、 ティース 3 0の肉厚は By setting the dimension F within 4.5 mm, the teeth 30 can be sufficiently formed even if the interval L between the teeth 30 is set to 6.35 mm as in the conventional case. That is, dimensions If F is 4.5 mm, the thickness of teeth 30 is
( 6 . 3 5 - 4 . 5 ) = 1 . 8 5 [mm]  (6.35-4.5) = 1.85 [mm]
となり、 樹脂による射出成形の場合に樹脂の流れに必要な肉厚、 および金属によ る圧延成形の場合の強度のために必要な肉厚を満たすことができる。 Thus, the thickness required for the flow of the resin in the case of injection molding with a resin and the thickness required for the strength in the case of roll molding with a metal can be satisfied.
[他の実施形態] [Other embodiments]
以上の実施形態では、 従来のウェハーキヤリア一 1とは別に全く専用のウェハ —キャリア一 2 1とするものであつたが、 他の実施形態では従来のウェハ一キヤ リア一 1を利用するものであっても良い。  In the above embodiment, a completely dedicated wafer—a carrier 21 is used separately from the conventional wafer carrier 11; in other embodiments, the conventional wafer carrier 11 is used. There may be.
すなわち、 図 5に示すように、 従来のウェハーキャリア一 1のティース 7に、 別体に成形された細い円弧状の嵌合ティース 6 1を嵌合し、 この嵌合ティース 6 1によってウェハ一 2 3を保持するものであっても良い。  That is, as shown in FIG. 5, a thin arc-shaped fitting tooth 61 formed separately is fitted into the tooth 7 of the conventional wafer carrier 11, and the wafer 1 3 may be held.
なお、 利用する従来のウェハ一キャリア一 1は、 大きいサイズのウェハー用の ものを用いる。 また、 図 5において図 3と類似の部分については、 同一の符号を 付す。 産業上の利用の可能性  The conventional wafer / carrier 11 used is for a large-sized wafer. In FIG. 5, the same parts as those in FIG. 3 are denoted by the same reference numerals. Industrial applicability
以上説明したように、 第 1、 第 2、 または 3の発明によれば、 ティースに形成 された突出部により、 ウェハーは奥側のみならず手前側も保持されるので、 反り Δ 1が手前側で更に大きくなつてしまうことを避けられ、 収納枚数の減少や結晶 への悪影響の問題を小さくできる。  As described above, according to the first, second, or third invention, since the wafer is held not only on the back side but also on the front side by the projections formed on the teeth, the warp Δ1 is reduced on the front side. It is possible to avoid further increase in size, and to reduce the problem of a decrease in the number of stored sheets and the adverse effect on the crystal.
また、 保持されるウェハ一の間隔やウェハーキヤリァ一の外形寸法を変更しな いで済むことも可能になり、 半導体製造工程のうちウェハ一の厚さが大きい前半 の工程と、 厚さが小さくなる後半の工程工程とで、 使用されるウェハ一キャリア —を共用することも可能になる。 このため、 さらに、 前半の工程で使用する装置、 例えば絶縁物、 緩衝物、 導通領域を形成する装置を、 あまり修正を加えずに後半 の工程でも使用することが可能になり、 半導体の製造コストを抑えることが可能 になる。 また、 ウェハ一の手前側で大きくなつていた下方への反り Δ 1を小さくでき、 ウェハ一表面の結晶に物理的、 機械的な悪影響をおよぼすことを抑止できる。 また、 ティ一スは突出部では、 断面が断続的な形状を有するので、 ウェハーの 出し入れの際に、 エンドエフヱクタ一やウェハ一がティースと干渉せず、 幅の広 ぃェンドエフェクターを使用することができ、 したがってたれ厶 2を小さくでき る。 また、 突出部を手前側で十分に大きくでき、 ウェハーを保持する部分を大き くできるので、 手前側の反り Δ 1を小さくすることができる。 Also, it is possible to avoid changing the distance between the held wafers and the outer dimensions of the wafer carrier. In the latter half of the process, it is possible to share the wafer and carrier used. This makes it possible to use equipment used in the first half of the process, such as insulators, buffers, and conductive area formation devices, in the second half of the process without much modification. Can be reduced. In addition, the downward warpage Δ1 that has increased on the front side of the wafer can be reduced, and physical and mechanical adverse effects on crystals on the surface of the wafer can be suppressed. Also, since the teeth have an intermittent cross section at the protruding part, use a wide end effector so that the end effector and the wafer do not interfere with the teeth when inserting and removing the wafer. Therefore, the size of the drop 2 can be reduced. In addition, the protrusion can be made sufficiently large on the near side, and the portion for holding the wafer can be made large, so that the warpage Δ1 on the near side can be reduced.
第 4の発明によれば、 ウェハ一のたれ△ 2が大きな値で存在し、 ピックァヅプ の際にウェハ一の両端がポケヅトに斜めに位置しても、 ポケヅトを形成する波形 の谷部が有するフラットな部分の寸法を大きくすることで、 ポケットの寸法が十 分に使え、 ピックアップのための領域寸法 Ρを大きくできる。 According to the fourth invention, even if the sag 2 of the wafer 1 exists at a large value and both ends of the wafer 1 are positioned obliquely to the pocket at the time of pick-up, the flat portion having the wave-shaped valley portion forming the pocket has By increasing the dimensions of the important parts, the dimensions of the pocket can be used sufficiently, and the area dimension Ρ for the pickup can be increased.
請求の範囲 The scope of the claims
1 . ウェハ一を収納して運搬するために、 以下の構成を備えたウェハ一キャリア o  1. Wafer carrier with the following configuration for storing and transporting wafers o
a . 複数枚の前記ウェハーを互いに離して平行に保持し、 手前側から出し入れ 可能にするため、 前記ウェハ一キャリア一の内周壁に設けられ、 前記各ウェハー の周縁部を左右から保持する複数のティースと、 a. A plurality of wafers are provided on the inner peripheral wall of the wafer and one carrier to hold a plurality of the wafers in parallel at a distance from each other so that they can be taken in and out from the near side, and a plurality of wafers holding the peripheral edge of each wafer from the left and right. Teeth and
b . 前記各ウェハーの左右の周縁部を、 前記ウェハーの中心より奥側のみなら ず手前側でも保持するため、 前記各ティースに形成され円弧状の内周縁部を有す る突出部と、 b. a protruding portion formed on each of the teeth and having an arc-shaped inner peripheral portion to hold the left and right peripheral portions of the respective wafers not only on the rear side but also on the near side from the center of the wafer;
c . 前記ティ一ス群の縦断面形状であって、 前記ウェハーキャリア一の内周壁 付近では、 連続する波形を有し、 前記突出部では、 出し入れされるェンドエフエ クタ一やウェハーに干渉しないように、 断続的な形状を有する縦断面形状。c. The vertical cross-sectional shape of the teeth group, which has a continuous waveform near the inner peripheral wall of the wafer carrier 1 and the projecting portion does not interfere with the end effector or the wafer to be taken in and out. A longitudinal cross-sectional shape with an intermittent shape.
2 . 前記円弧状の内周縁部は、 奥側と手前側で対称である請求項 1に記載のゥェ ハーキヤリァ一。 2. The car carrier according to claim 1, wherein the arc-shaped inner peripheral edge portion is symmetrical on a back side and a near side.
3 . 左右に形成される突出部の先端間の間隔は、 9 0 mm以内で 1 5 mm以上 である請求項 2に記載のウェハーキヤリァ一。  3. The wafer carrier according to claim 2, wherein the distance between the tips of the protrusions formed on the left and right is not more than 90 mm and not less than 15 mm.
4 . ウェハ一を収納して運搬するために、 以下の構成を備えたウェハ一キヤリ ァー。  4. Wafer carrier with the following configuration for storing and transporting wafers.
a . 複数枚の前記ウェハーを互いに離して平行に保持し、 手前側から出し入れ 可能にするため、 前記ウェハーキャリア一の内周壁に設けられ、 前記各ウェハー の周縁部を左右から保持する複数のティースと、 a. A plurality of teeth provided on the inner peripheral wall of the wafer carrier 1 for holding the plurality of wafers parallel to each other at a distance from each other and allowing the wafers to be taken in and out from the front side, and holding the peripheral edge of each wafer from the left and right. When,
b . 前記ティース群の縦断面形状であって、 前記ウェハーキャリア一の内周壁 付近では、 連続する波形を有し、 この波形の谷部が有するフラットな部分の寸法 を、 3 mm以上で 4 . 5 mm以内にした縦断面形状。 b. The vertical cross-sectional shape of the teeth group, which has a continuous waveform near the inner peripheral wall of the wafer carrier 1. The flat portion of the valley portion of the waveform has a dimension of 3 mm or more and 4. Longitudinal cross section within 5 mm.

Claims

補正書の請求の範囲 [2001年 5月 7日 (07. 05. 01) 国際事務局受理:出願当初の請求の範囲 1及び 4は 補正された;他の請求の範囲は変更なし。 (2頁) ] Claims of amendment [May 7, 2001 (07.05.01) Accepted by the International Bureau: Claims 1 and 4 originally filed have been amended; other claims remain unchanged. (2 pages)]
1 . (補正後) 複数枚のウェハ一を互いに離して平行に保持し、 手前側から出し 入れ可能にウェハーを収納して運搬する、 以下の構成を備えたウェハーキヤリア o 1. (After correction) A wafer carrier with the following configuration, which holds a plurality of wafers parallel to each other, and stores and transports wafers so that they can be taken in and out from the near side.
a . 左右の側壁部及び上下の水平部材と、 a. Left and right side walls and upper and lower horizontal members,
b . 前記側壁部の内周壁に設けられた前記各ウェハーの周縁部を左右から保持す る複数のティースと、 b. a plurality of teeth provided on the inner peripheral wall of the side wall to hold the peripheral edge of each wafer from the left and right;
c 前記各ウェハーの左右の周縁部を、 前記ウェハーの中心より奥側のみならず 手前側でも保持するため、 前記各ティースに形成され円弧状の内周縁部を有する 突出部と、 c to hold the left and right peripheral portions of each of the wafers not only on the back side but also on the near side from the center of the wafer, a projection having an arc-shaped inner peripheral portion formed on each of the teeth,
d . 前記複数のティースの縦断面形状は、 前記ウェハーキャリアーの内周壁付近 では、 連続する波形を有し、 前記突出部では、 出し入れされるエンドエフェク夕 一とウェハーに干渉しないように、 断続的な形状を有し、 前記複数のティース間 隔及び円弧状の内縁部の間隔は、 L :ティース間隔、 Δ 1 :ウェハーの反り、 Δ 2 : ウェハーのたれ、 P : ウェハーのピックアップ寸法とするとき、 d. The vertical cross-sectional shape of the plurality of teeth has a continuous waveform near the inner peripheral wall of the wafer carrier, and the projecting portions are intermittent so as not to interfere with the end effector to be taken in and out and the wafer. When the distance between the teeth and the arc-shaped inner edge are L: teeth distance, Δ1: wafer warpage, Δ2: wafer sagging, and P: wafer pick-up dimension ,
L > Δ 1 +厶 2 + P  L> Δ 1 + m 2 + P
である。 It is.
2 . 前記円弧状の内周縁部は、 奥側と手前側で対称である請求項 1に記載のゥェ ハ一キャリア一。  2. The wafer carrier according to claim 1, wherein the arc-shaped inner peripheral edge is symmetrical on a back side and a near side.
3 . 左右に形成される突出部の先端間の間隔は、 9 O mm以内で 1 5 mm以上 である請求項 2に記載のウェハ一キヤリァ一。  3. The wafer carrier according to claim 2, wherein the distance between the tips of the protrusions formed on the left and right is 15 mm or more within 90 mm.
4 . (補正後) 複数枚のウェハ一を互いに離して平行に保持し、 手前側から出し 入れ可能にウェハーを収納して運搬する、 以下の構成を備えたウェハーキヤリア ο  4. (After correction) A wafer carrier with the following configuration, which holds a plurality of wafers parallel to each other, and stores and transports them so that they can be taken in and out from the near side.
a . 左右の側壁部及び上下の水平部材と、 a. Left and right side walls and upper and lower horizontal members,
b . 前記側壁部の内周壁に設けられた前記各ウェハーの周縁部を左右から保持す る複数のティースと、 b. a plurality of teeth provided on the inner peripheral wall of the side wall to hold the peripheral edge of each wafer from the left and right;
c 前記複数のティースは、 L :ティース間隔、 △ 1 :ウェハ一の反り、 c The plurality of teeth are: L: tooth spacing, Δ1: wafer warpage,
13 13
'楠正された用紙 (条約第, 19条) Δ 2 :ウェハ一のたれ、 P:ウェハ一のピヅクアップ寸法とするとき、 L> Δ 1 +Δ 2 +P 'Kusu's paper (Article 19 of the Convention) Δ 2: sagging of wafer, P: when assuming the pickup size of wafer, L> Δ 1 + Δ 2 + P
であり、 And
d. 前記ティース群の縦断面形状は、 前記ウェハ一キャリアーの内周壁付近では、 連続する波形を有し、 この波形の谷部が有するフラットな部分の寸法が 3mm以 上で 4.5 mm以内である。 d. The vertical cross-sectional shape of the teeth group has a continuous waveform near the inner peripheral wall of the wafer carrier, and the flat portion of the valley of the waveform has a dimension of 3 mm or more and 4.5 mm or less. .
14 14
'楠正された用紙 (条約第^条) 'Paper on Kusunoki Tadashi (Article ^ of the Convention)
条約 1 9条に基づく説明書 Statements under Article 19 of the Convention
1. 請求の範囲第 1項及び第 4項は、 従来より薄型の複数枚のウェハーを互いに 離して平行に保持し、 手前側から出し入れ可能にウェハーを収納して運搬する、 ウェハ一キヤリア一であり、 その点を明確にするため請求の範囲を補正した。1. Claims 1 and 4 refer to a wafer-to-carrier, which holds a plurality of thinner wafers than before and keeps them parallel to each other, and stores and transports wafers so that they can be taken in and out from the near side. Yes, the claims have been amended to clarify this point.
2. 引用例 1 (USP. No. 6074515) は、 そのウェハ一を水平に保持するキ ャリアであって、 前面から後面にウェハ一を移動させて、 処理室に移動させるた めのキヤリァである。 特に薄型のウェハーを保持するためのキヤリァではない。 2. Reference 1 (USP. No. 6074515) is a carrier that holds the wafer horizontally and moves the wafer from the front to the back and moves it to the processing chamber. . In particular, it is not a carrier for holding a thin wafer.
引用例 2 (USP. No. 5577621) は、 サイズの異なるウェハーを収容保 持するためのウェハ一キャリアであり、 ティースの形状が円弧状であり、 またテ ィ一スはサイズの異なるウェハーを収容できる直径寸法の異なる凹部を備える。 Reference 2 (USP. No. 5577621) is a wafer carrier for accommodating and holding wafers of different sizes.The teeth have an arc shape, and the teeth accommodate wafers of different sizes. It has recesses of different possible diameter dimensions.
3. 引用例と異なり、 本願発明は特にティースの間隔を限定しているので、 従来 よりも薄型のウェハ一を収容できる利点がある。 3. Unlike the cited examples, the invention of the present application has a particularly limited interval between the teeth, and thus has an advantage that a thinner wafer than before can be accommodated.
PCT/JP2000/008767 2000-12-12 2000-12-12 Wafer carrier WO2002049095A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8147478B2 (en) 2000-09-07 2012-04-03 Ams Research Corporation Coated sling material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5577621A (en) * 1994-05-31 1996-11-26 Electronics & Telecommunications Research Institute Wafer installing cassette for semiconductor manufacturing apparatus
US6074515A (en) * 1997-03-24 2000-06-13 Dainippon Screen Mfg. Co., Ltd. Apparatus for processing substrates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5577621A (en) * 1994-05-31 1996-11-26 Electronics & Telecommunications Research Institute Wafer installing cassette for semiconductor manufacturing apparatus
US6074515A (en) * 1997-03-24 2000-06-13 Dainippon Screen Mfg. Co., Ltd. Apparatus for processing substrates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8147478B2 (en) 2000-09-07 2012-04-03 Ams Research Corporation Coated sling material

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