WO2002052235A3 - Use of multi-layer thin films as stress sensors - Google Patents
Use of multi-layer thin films as stress sensors Download PDFInfo
- Publication number
- WO2002052235A3 WO2002052235A3 PCT/US2001/050341 US0150341W WO02052235A3 WO 2002052235 A3 WO2002052235 A3 WO 2002052235A3 US 0150341 W US0150341 W US 0150341W WO 02052235 A3 WO02052235 A3 WO 02052235A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sensor
- thin films
- layer thin
- tmr
- resistance
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/12—Measuring force or stress, in general by measuring variations in the magnetic properties of materials resulting from the application of stress
- G01L1/125—Measuring force or stress, in general by measuring variations in the magnetic properties of materials resulting from the application of stress by using magnetostrictive means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002246839A AU2002246839A1 (en) | 2000-12-20 | 2001-12-20 | Use of multi-layer thin films as stress sensors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/747,304 US7059201B2 (en) | 2000-12-20 | 2000-12-20 | Use of multi-layer thin films as stress sensors |
US09/747,304 | 2000-12-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002052235A2 WO2002052235A2 (en) | 2002-07-04 |
WO2002052235A3 true WO2002052235A3 (en) | 2003-03-13 |
Family
ID=25004519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/050341 WO2002052235A2 (en) | 2000-12-20 | 2001-12-20 | Use of multi-layer thin films as stress sensors |
Country Status (3)
Country | Link |
---|---|
US (1) | US7059201B2 (en) |
AU (1) | AU2002246839A1 (en) |
WO (1) | WO2002052235A2 (en) |
Families Citing this family (50)
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JP3618654B2 (en) * | 2000-09-11 | 2005-02-09 | 株式会社東芝 | Magnetoresistive element, magnetic head, and magnetic recording / reproducing apparatus |
US6905780B2 (en) * | 2001-02-01 | 2005-06-14 | Kabushiki Kaisha Toshiba | Current-perpendicular-to-plane-type magnetoresistive device, and magnetic head and magnetic recording-reproducing apparatus using the same |
US6781801B2 (en) * | 2001-08-10 | 2004-08-24 | Seagate Technology Llc | Tunneling magnetoresistive sensor with spin polarized current injection |
US6823739B2 (en) * | 2001-12-20 | 2004-11-30 | National Institute Of Advanced Industrial Science And Technology | Thin pressure sensor and biological information measuring device using same, and biological information measuring method |
DE10250358B4 (en) * | 2002-10-29 | 2017-02-09 | Infineon Technologies Ag | Sensor module for measuring mechanical forces |
JP4714918B2 (en) * | 2002-11-29 | 2011-07-06 | 独立行政法人科学技術振興機構 | Spin injection device and magnetic device using spin injection device |
DE10319319A1 (en) * | 2003-04-29 | 2005-01-27 | Infineon Technologies Ag | Sensor device with magnetostrictive force sensor |
JP4244312B2 (en) * | 2003-10-02 | 2009-03-25 | 株式会社東芝 | Magnetoresistive element, magnetic head, and magnetic reproducing apparatus |
DE102004032484B3 (en) | 2004-07-05 | 2005-11-24 | Infineon Technologies Ag | Sensor and method for manufacturing a sensor |
JP4150013B2 (en) * | 2005-03-31 | 2008-09-17 | Tdk株式会社 | Tunnel effect element |
US8119265B2 (en) * | 2005-04-01 | 2012-02-21 | Seagate Technology Llc | Magneto-elastic anisotropy assisted thin film structure |
US7267997B1 (en) * | 2005-04-29 | 2007-09-11 | Samsung Electronics Co., Ltd. | Process for forming magnetic memory structures |
JP2007096105A (en) * | 2005-09-29 | 2007-04-12 | Toshiba Corp | Magnetoresistance effect element, magnetoresistance effect head, magnetic storage device and magnetic memory |
US7547480B2 (en) * | 2005-10-28 | 2009-06-16 | Everspin Technologies, Inc. | Magnetic tunnel junction pressure sensors and methods |
JP4786331B2 (en) | 2005-12-21 | 2011-10-05 | 株式会社東芝 | Method for manufacturing magnetoresistive element |
JP4514721B2 (en) * | 2006-02-09 | 2010-07-28 | 株式会社東芝 | Magnetoresistive element manufacturing method, magnetoresistive element, magnetoresistive head, magnetic recording / reproducing apparatus, and magnetic storage apparatus |
JP2007299880A (en) | 2006-04-28 | 2007-11-15 | Toshiba Corp | Magnetoresistance effect element and its manufacturing method |
JP4550777B2 (en) | 2006-07-07 | 2010-09-22 | 株式会社東芝 | Magnetoresistive element manufacturing method, magnetoresistive element, magnetic head, magnetic recording / reproducing apparatus, and magnetic memory |
JP4490950B2 (en) * | 2006-07-07 | 2010-06-30 | 株式会社東芝 | Magnetoresistive element manufacturing method and magnetoresistive element |
WO2008049124A2 (en) * | 2006-10-19 | 2008-04-24 | Boise State University | Magnetomechanical transducer, and apparatus and methods of harvesting energy |
WO2008061166A2 (en) * | 2006-11-14 | 2008-05-22 | Boise State University | Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials |
JP4388093B2 (en) | 2007-03-27 | 2009-12-24 | 株式会社東芝 | Magnetoresistive element, magnetic head, magnetic recording / reproducing apparatus |
JP2008252008A (en) * | 2007-03-30 | 2008-10-16 | Toshiba Corp | Magnetoresistance effect element and method of manufacturing the same |
JP2008311373A (en) * | 2007-06-13 | 2008-12-25 | Toshiba Corp | Magnetic multilayered film conducting element |
US8586194B2 (en) * | 2007-08-30 | 2013-11-19 | Boise State University | Polycrystalline foams exhibiting giant magnetic-field-induced deformation and methods of making and using same |
JP5150284B2 (en) | 2008-01-30 | 2013-02-20 | 株式会社東芝 | Magnetoresistive element and manufacturing method thereof |
JP5361201B2 (en) * | 2008-01-30 | 2013-12-04 | 株式会社東芝 | Method for manufacturing magnetoresistive element |
US8381601B2 (en) * | 2008-05-05 | 2013-02-26 | John F. Stumpf | Transducer matrix film |
US8091437B2 (en) * | 2008-05-05 | 2012-01-10 | John Stumpf | Transducer matrix film |
JP5039007B2 (en) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | Magnetoresistive element manufacturing method, magnetoresistive element, magnetic head assembly, and magnetic recording / reproducing apparatus |
JP5039006B2 (en) * | 2008-09-26 | 2012-10-03 | 株式会社東芝 | Magnetoresistive element manufacturing method, magnetoresistive element, magnetic head assembly, and magnetic recording / reproducing apparatus |
JP5032429B2 (en) * | 2008-09-26 | 2012-09-26 | 株式会社東芝 | Magnetoresistive element manufacturing method, magnetoresistive element, magnetic head assembly, and magnetic recording / reproducing apparatus |
JP5032430B2 (en) * | 2008-09-26 | 2012-09-26 | 株式会社東芝 | Magnetoresistive element manufacturing method, magnetoresistive element, magnetic head assembly, and magnetic recording / reproducing apparatus |
JP2010080839A (en) | 2008-09-29 | 2010-04-08 | Toshiba Corp | Method of manufacturing magneto-resistance effect device, the magneto-resistance effect device, magnetic head assembly, and magnetic recording and reproducing apparatus |
US8325450B2 (en) * | 2008-12-10 | 2012-12-04 | Hitachi Global Storage Technologies Netherlands B.V. | Low resistance tunnel magnetoresistance (TMR) structure |
US20120090757A1 (en) | 2010-10-18 | 2012-04-19 | Qualcomm Mems Technologies, Inc. | Fabrication of touch, handwriting and fingerprint sensor |
FR2970779B1 (en) * | 2011-01-25 | 2013-02-15 | Francis Cannard | DEVICE FOR MEASURING PRESSURE FROM A FLEXIBLE, FOLDABLE AND / OR EXTENSIBLE OBJECT PRODUCED FROM TEXTILE MATERIAL COMPRISING A MEASURING DEVICE |
JP5701807B2 (en) * | 2012-03-29 | 2015-04-15 | 株式会社東芝 | Pressure sensor and microphone |
US9024910B2 (en) | 2012-04-23 | 2015-05-05 | Qualcomm Mems Technologies, Inc. | Touchscreen with bridged force-sensitive resistors |
CN102692287A (en) * | 2012-06-15 | 2012-09-26 | 扬州大学 | Novel stress sensor based on magnetoresistance effect |
JP6113581B2 (en) | 2013-06-12 | 2017-04-12 | 株式会社東芝 | Pressure sensor, acoustic microphone, blood pressure sensor, and touch panel |
JP6523004B2 (en) * | 2015-03-24 | 2019-05-29 | 株式会社東芝 | Strain sensing element and pressure sensor |
US10082431B2 (en) * | 2015-07-17 | 2018-09-25 | Honeywell International Inc. | System and methods for magnetic tunnel junction pressure sensors |
JP6421101B2 (en) * | 2015-09-09 | 2018-11-07 | 株式会社東芝 | Sensor, information terminal, microphone, blood pressure sensor, and touch panel |
WO2018072171A1 (en) * | 2016-10-20 | 2018-04-26 | 深圳市汇顶科技股份有限公司 | Fingerprint-based pressure measurement method and device |
CN107368221B (en) * | 2017-07-21 | 2020-07-10 | 北京小米移动软件有限公司 | Pressure determination method and device and fingerprint identification method and device |
JP6615971B2 (en) * | 2018-10-05 | 2019-12-04 | 株式会社東芝 | Sensor, microphone, blood pressure sensor, and touch panel |
US11226252B2 (en) | 2019-01-07 | 2022-01-18 | International Business Machines Corporation | Multilayered magnetic free layer structure in magnetic tunnel junction arrays for sub-micrometer resolution pressure sensors |
WO2020158159A1 (en) | 2019-01-30 | 2020-08-06 | 株式会社村田製作所 | Stress sensor and manufacturing method for same |
CN113008434B (en) * | 2021-02-07 | 2022-11-11 | 中国人民解放军国防科技大学 | Orthogonal differential flexible electromagnetic sensor for residual stress detection |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4394773A (en) * | 1980-07-21 | 1983-07-19 | Siemens Corporation | Fingerprint sensor |
EP0889521A2 (en) * | 1997-07-02 | 1999-01-07 | STMicroelectronics, Inc. | Solid state fingerprint sensor packaging apparatus and method |
Family Cites Families (12)
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US4499515A (en) * | 1982-07-14 | 1985-02-12 | Minnesota Mining And Manufacturing Company | Integrated magnetostrictive-piezoresistive magnetic recording playback head |
US5408377A (en) * | 1993-10-15 | 1995-04-18 | International Business Machines Corporation | Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor |
US5491600A (en) * | 1994-05-04 | 1996-02-13 | International Business Machines Corporation | Multi-layer conductor leads in a magnetoresistive head |
US5442508A (en) * | 1994-05-25 | 1995-08-15 | Eastman Kodak Company | Giant magnetoresistive reproduce head having dual magnetoresistive sensor |
US5891586A (en) * | 1995-01-27 | 1999-04-06 | Alps Electric Co., Ltd. | Multilayer thin-film for magnetoresistive device |
US5702831A (en) * | 1995-11-06 | 1997-12-30 | Motorola | Ferromagnetic GMR material |
JP3600415B2 (en) * | 1997-07-15 | 2004-12-15 | 株式会社東芝 | Distributed constant element |
US5856617A (en) * | 1997-09-02 | 1999-01-05 | International Business Machines Corporation | Atomic force microscope system with cantilever having unbiased spin valve magnetoresistive strain gauge |
JP3703348B2 (en) * | 1999-01-27 | 2005-10-05 | アルプス電気株式会社 | Spin valve thin film element and thin film magnetic head including the spin valve thin film element |
US6381171B1 (en) * | 1999-05-19 | 2002-04-30 | Kabushiki Kaisha Toshiba | Magnetic element, magnetic read head, magnetic storage device, magnetic memory device |
JP3756757B2 (en) * | 2000-12-01 | 2006-03-15 | アルプス電気株式会社 | Exchange coupling film, magnetoresistive element using the exchange coupling film, and thin film magnetic head using the magnetoresistive element |
US6473279B2 (en) * | 2001-01-04 | 2002-10-29 | International Business Machines Corporation | In-stack single-domain stabilization of free layers for CIP and CPP spin-valve or tunnel-valve read heads |
-
2000
- 2000-12-20 US US09/747,304 patent/US7059201B2/en not_active Expired - Lifetime
-
2001
- 2001-12-20 AU AU2002246839A patent/AU2002246839A1/en not_active Abandoned
- 2001-12-20 WO PCT/US2001/050341 patent/WO2002052235A2/en not_active Application Discontinuation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4394773A (en) * | 1980-07-21 | 1983-07-19 | Siemens Corporation | Fingerprint sensor |
EP0889521A2 (en) * | 1997-07-02 | 1999-01-07 | STMicroelectronics, Inc. | Solid state fingerprint sensor packaging apparatus and method |
Also Published As
Publication number | Publication date |
---|---|
US7059201B2 (en) | 2006-06-13 |
US20020073785A1 (en) | 2002-06-20 |
AU2002246839A1 (en) | 2002-07-08 |
WO2002052235A2 (en) | 2002-07-04 |
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