WO2002059948A2

WO2002059948A2 - Ferroelectric capacitor, method for the production thereof and use of the same

Info

Publication number: WO2002059948A2
Application number: PCT/DE2002/000123
Authority: WO
Inventors: Dana Pitzer; Robert Primig; Matthias Schreiter; Rainer Bruchhaus
Original assignee: Siemens Aktiengesellschaft
Priority date: 2001-01-26
Filing date: 2002-01-17
Publication date: 2002-08-01
Also published as: DE10103529A1; WO2002059948A3; DE10103529B4

Abstract

The invention relates to a capacitor comprising a layered structure having at least two electrode layers (3, 4) and a ferroelectric layer (2) consisting of a ferroelectric material and arranged between said electrode layers. At least one of the electrode layers (4) comprises at least one trench (5) for the electrical isolation of at least two partial areas (6, 7) of the electrode layer which are arranged next to each other and define the trench, and the trench comprises an electrical isolating material (11) which is different from the ferroelectric material. The inventive capacitor is characterised in that the trench is defined by the ferroelectric layer. The trench and the isolation material thereof enable the electrode layers to be electrically isolated in a simple and reliable manner. The production of the capacitor can also be simplified in that the isolating material does not need to be arranged on a lateral surface of the capacitor in order to electrically isolate the electrode layers. The capacitor is used as a detector element (20) of a detector array (21) for detecting infrared radiation (22).

Description

description

Ferroelectric capacitor, method of making and using the capacitor

The invention relates to a capacitor having a layer structure with at least two electrode layers and a ferroelectric layer with ferroelectric material arranged between the electrode layers, wherein at least one of the electrode layers has at least one trench for electrical insulation of at least two subregions of the electrode layer which are arranged next to one another and delimit the trench Trench has an electrical insulation material different from the ferroelectric material. In addition to the capacitor, a method of manufacturing and using the capacitor are given.

A capacitor of the type mentioned is known from Integrated Ferroelectrics, 1999, Vol. 25, pages 1-11. The capacitor is a thin film capacitor which is applied to a glass layer (carrier layer, layer thickness approximately 500 nm) of a carrier body (substrate). The carrier body is a silicon wafer. The ferroelectric material of the ferroelectric layer (layer thickness about 900 nm) is _. for example the pyroelectrically sensitive material lead zirconate titanate (Pb (Zr, Ti) 0 ₃ , PZT). A lower electrode layer (layer thickness approximately 80 nm) of the capacitor, which is in contact with the glass layer, is made of platinum and consists of two partial areas arranged next to one another. For the electrical insulation of the partial areas there is a trench between the partial areas, which is filled with electrical insulation material. However, the electrical insulation material is not only in the trench between the partial areas arranged next to one another, but also on a lateral surface of the ferroelectric layer. Starting from an upper one Electrode layer of the capacitor, which also consists, for example, of platinum, is metallized on the insulation material along the lateral surface of the ferroelectric layer down to one of the subareas of the lower electrode layer. An electrical potential that is present at the upper electrode layer can be determined via the metallization. The capacitor described is used as a detector element of a pyrodetector for the detection of infrared radiation (heat radiation). The infrared radiation is absorbed by the electrode layers. An amount of energy absorbed is passed on to the pyroelectrically sensitive material. A resulting heating of the pyroelectrically sensitive material leads to a measurable potential difference between the electrode layers. The pyrodetector is designed as a detector array for spatially resolved detection of the infrared radiation. The detector elements are arranged in cells on the silicon wafer.

No. 5,939,722 shows a similar capacitor which is also used as a detector element of a pyrodetector in the form of a detector array. The capacitor is on a lower electrode layer made of platinum on an electrically insulating carrier layer made of boron-phosphorus-silicate glass

(BPSG). The carrier layer is on a silicon wafer. The lower electrode layer is in one piece. An upper electrode layer consists of a chromium-nickel alloy and is, for example, 20 nm thick. For example, a ferroelectric layer made of lead zirconate titanate is located between the electrode layers. The ferroelectric layer has a base area of approximately 50 × 50 μm ² . Around 100 x 100 detector elements together form the pyrodetector. There is electrical for the electrical insulation of the electrode layers

Insulation material on a side surface of the ferroelectric layer. For electrical contacting of the a 450 nm thick metallization is applied to the upper electrode layer on the electrical insulation material.

The object of the present invention is to provide electrical insulation of the electrode layers of a ferroelectric capacitor that is simpler and more secure than the known ferroelectric capacitors.

To achieve the object, a capacitor is provided, comprising a layer structure with at least two electrode layers and a ferroelectric layer with ferroelectric material arranged between the electrode layers, wherein at least one of the electrode layers has at least one trench for electrical insulation of at least two partial regions of the trench which are arranged next to one another and delimit the trench Electrode layer, and the trench has an electrical insulation material different from the ferroelectric material. The capacitor is characterized in that the trench is delimited by the ferroelectric layer.

In addition to the capacitor, a method for producing the capacitor is specified to solve the problem. The manufacture takes place by providing a carrier layer with an electrically insulating carrier material and producing the electrode layer with the trench, the insulation material and the partial areas on the carrier layer.

The basic idea of the invention is to place the insulation material for the electrical insulation of the two partial regions of the lower electrode layer and thus the electrical insulation of the two electrode layers not on the side of the ferroelectric layer, but under the ferroelectric layer. The trench is preferably 1 to 2 µm wide. The result is a safer and simpler construction of the Capacitor. The insulation material does not have to be attached to the side of the capacitor. This significantly simplifies the manufacture of the capacitor compared to the prior art. This applies in particular to the case where several capacitors are combined as detector elements of a detector array. At the same time, the electrical potential of the upper electrode layer can be tapped in a conventional manner via a metallization attached to the lateral surface of the ferroelectric layer.

The ferroelectric material is a pyroelectric sensitive material. The ferroelectric capacitor can thus be used as a pyrodetector for the detection of infrared radiation. The ferroelectric material has in particular a lead zirconate titanate. Another perovskite based on lead oxide (PbO) such as lead titanate (PbTi0 ₃ ) or lead lanthanum zirconate titanate ((Pb, La) (Zr, Ti) 0 ₃ , PLZT) is also conceivable.

The electrode with the partial regions (lower electrode) preferably has an electrode material with platinum. For example, the electrode material can consist only of platinum. Any platinum alloy is also conceivable. A thickness of this electrode layer is selected from the range between 50 nm and 300 nm. The upper electrode layer can also have platinum. However, it preferably consists of a chromium-nickel alloy that absorbs infrared radiation.

In a special embodiment, the electrode layer with the partial areas is arranged on a carrier layer with an electrically insulating carrier material. The carrier layer is in turn applied, for example, to a silicon substrate. In particular, the insulation material and / or the electrically insulating carrier material have at least one oxide. The oxide has in particular at least one element selected from the group aluminum and / or boron and / or phosphorus and / or silicon and / or tantalum and / or titanium and / or zirconium. Such an oxide is, for example, aluminum oxide (A1 ₂ 0 ₃ ), tantalum oxide (Ta ₂ 0 ₅ ), titanium oxide (Ti0 ₂ ), silicon oxide (Si0 ₂ ) or zirconium oxide (Zr0 ₂ ). A silicon oxide made from tetraethylorthosilane (TEOS) or a glass such as boron-phosphorus-silicate glass is also conceivable.

To produce the electrode layer with the trench, the insulation material and the partial areas, the following steps are preferably carried out: applying a layer of electrode material on the carrier layer, removing electrode material from the layer of electrode material, so that a trench is formed in the layer of electrode material, which is formed by two Partial areas of the layer of electrode material and the carrier layer is limited, and filling the trench with insulation material. This means that after the electrically insulated partial regions of the electrode layer separated by the trench have been produced, the insulation material is applied to the carrier layer. But it is also conceivable that in a first step

Insulation material in the form of a web is applied to the carrier layer. Furthermore, electrode material is applied in such a way that the web forms the trench filled with insulation material between the partial regions of the electrode layer.

In particular, a vapor deposition process (Chemical Vapor Depositon, CVD) is carried out to apply the layer of electrode material and / or to fill the trench with the insulation material. However, a physical vapor deposition (PVD) process, for example a sputtering process, can also be used. But it is also conceivable a wet chemical process for depositing the layers, for example a sol-gel process.

It is advantageous if the insulation material adheres particularly well to the carrier layer. A particularly favorable combination is, for example, a carrier layer made of silicon oxide and an insulation material made of aluminum oxide or tantalum oxide.

In a special embodiment, an etching process is carried out to remove the electrode material. The trench is etched into the applied layer of the electrode material. The etching process can be carried out wet-chemically with an etching solution or dry-chemically with etching gas (e.g. during plasma etching).

In particular, after the trench has been filled with the insulation material, a surface is smoothed, which is formed jointly by the insulation material and the subregions of the electrode layer and which

Carrier layer is facing away. The trench is completely filled with the insulation material. The insulation material can also reach a surface section of the partial areas of the electrode layer. Smoothing creates a flat surface. A surface section which is formed by the insulation material and surface sections which are formed by the partial regions of the electrode layer are flush. In particular, polishing is carried out to smooth the surface. Polishing can be done mechanically. In particular, chemically assisted mechanical polishing (chemical mechanical polishing, CMP) can be used.

Furthermore, the ferroelectric layer is also applied to the electrode with the trench filled with insulation material and the partial areas with the aid of a vapor deposition process. Here it has turned out to be special 00 oo KJ l \) p- ¹ P ¹ oπ o on o Oπ o Oπ

3 tr P) vQ ^•• Hl Hi H ö s: iQ MN 3 P- CΛ Hi ιQ φ CΛ «Φ ι- (Hi s S! PJ PM υq fD Φ P 3 Φ rr Φ Φ P- φ P- P ⁾ P Φ P n Φ P- M n ι- (P- Φ Φ fυ PP cn p:

EP cn cn H Φ N ι-i H Φ Φ rt ι-i P φ 3 tr cn tr H φ P tr P- P cn P cn Ω cn PL OP ω O Hi ^ CL H- HHH? T Φ N - H tr P- H P- φ Φ P- cn φ P li Ω tr - ^> cn r P ^J p: o Φ O P> OOH rf Hi rt ffi Φ Φ n OO? n rt P ¹ O tr cn Λ ι-3 PJ rt J ι-i tr PP ^J r + Φ Φ ι-i ι-i rt Φ ι-i φ ι-i cn tr Φ ^* CΛ rt tr J iQ rt Φ Φ rt P- PJ rt P- tr P- ii ι • • Φ pj: OO P- J: O ι-i Φ O rt P- n ι-i rt P- P- p P "P p- ιq

CΛ Φ P Φ φ Φ iQ HPO cn PP Φ pj: tr O Φ Φ Φ CL P P- rt OQ tr PPM P- w W Φ φ Φ tr φ rt n ^ E P- P> cn P- H? φ cn N ⁾ P tr

(D Φ Ώ P- P- P rt rt P, PM cn P- P fD σ fD tr et P- n φ P rt n rt rt <! 3 P- M cn fD rf P ω Φ PH li n cn Φ rt ιQ cn Φ H Φ H> Q tr p Po p. P 'P, φ OPO 3 p>

H • t P CL P- P- O n 3 H n rt Φ 3 P- Φ rt P P. p Φ P- H P. 3 tx PJ PJ

Φ Φ * Φ cn cn P ^J tr Φ P PJ tr Φ Φ P- cn H PJ P pj: P- cn Hi * do P- rt 0

P σ P- Ξ rr H O O P- P- P; P P- P ι r P cn n 3 rt P rt EP P Ω PJ tr X CL Φ cn

Φ P- cn P- NP ^J tr O n rt rt Hi n rt PJ n tr «P- Φ rt P P- Φ tr tr o P- P> ιQ

P Φ • d n • d Hi Φ Φ tr tr Φ P tr O P t Φ H rt H Φ H iQ Φ l-J CL tr p- Φ

P- 1-5 Φ rt ι-i fX rt φ ι-i P P- P- ι- (Φ Hi Φ o ^ P> PJ cn

^ φ o H CΛ S Φ α P- φ Φ ι-i Φ P S cn ιQ tu cn PJ Φ CΛ P ιq Hi rt

& P- NH n J PJ PP φ HPP "<ι P fu rt n PN ι-i Ω • P- cn rt Φ tr iQ cn P- φ OP ^J r tr ι-i H ö Φ O rt J Φ tr Hi c ii tr Φ O Φ PL

P- P Φ cn Φ P- Φ iQ P o rt m P Φ 3 H Φ P "P- H- s: ω O P- ö PP Φ -> - ¹ lJ P cn P" o ι-i Φ P tr Φ ι-i P rt φ rt Ό ι-JP ^J n H Φ Φ PJ Φ Ω P- PL PL cn rt α Φ PM Φ tr P- rt CL ιQ cn ⁾ : Φ P Φ tr P- cn p 'cn P - g P ¹ tr φ Φ φ P

P P H ^ W rt PJ ι-i Φ ^ Q ^ rt P- • <PJ rt O cn 3 φ rt cn P p. P-Q

P Hl J rt P "PJ Hi Φ rt Φ P ¹ cn ι-i pj: ¹ P- rt Φ - P Ω HQ cn P- PHO tQ P-: rt ι-i P- OP tr P- PE PJ O. P rt J ^ Hl tr J ¹

Φ P- Φ P P P- tr P = Φ Φ tr N cn Φ ι-i J? : W P- rt tr cn p. P. P- φ Hi rt tr P

P P H CL cn φ tr P H Φ O Φ tr Hi J tr rr ιQ P- Φ O φ P- w - l-i P-- Φ 3

P 0- O 3 φ • Hi rt P tr Hi P ^J Φ rt φ P Φ o P tr rt cn rt P, tr PP P-

P PJ P ^J P- n Φ • P- Φ Φ H P- HH li P t N Ω ttlo p> P cn PJ cn PJ ⁽ Q 3 φ cn α HN π li 3 ιQ cn • cn S o P tr P- φ φ li P-

H n N P- P o PJ ι-i tfl P tr H Φ φ ≤ nti 3 PJ tr P Φ φ PP ¹ PN p

• tr P PJ rt P ^J P- o φ ι-i rt OP cn Φ tr P- ö P PJ rt P ^J vQ P- cn φ ιq P 3 φ \ QP CΛ φ P φ P- Φ rt rt P φ P - cn rt Φ ω N tr I 0 ⁾ P o

3 Φ tr eo ιQ H 3 ι-3 J Φ Φ P iQ φ J Φ HP Ω P- φ rt P rt JP ^J P> Φ P ^J vQ o φ 1-5 P φ iQ cn 3 H P- P- P tr H cn p. Ω Φ P- r + O: P cn P- φ Φ P ^J ? Φ Hi; , φ Φ Φ g P- PJ ω CL P- O P- tr P ⁾ H PL

P- HOO P- Cn rr et P vQ rt Φ rt p- P- cn tr Φ J Ω o P cn P tn P- PP ^J n P> ι-i NP Φ H li P n PJ φ P P- Hi Φ tr P CL Ω N Hi φ zo

O ιQ Φ r + tr 3 α. P- φ P rt P- s: tr 3 CL cn Φ φ P- rt P> Φ tr P P PL

P ^J Φ P- Φ rt J cn PPH cn Φ P- ö rt φ Φ PHP rt P> Φ Φ PL Φ

P P P> p: <! Φ cn O iQ PJ O P H Φ <l Φ P rt PJ H Φ rt φ P φ P- φ H

P Φ cn tr Φ cn tr s. ιQ tr rr Φ rt N P o PL P- P- P P

P ^ 3 cn Φ H PJ Φ φ Φ Φ Q.. Φ H Hi Φ P Hi φ ιQ P- rf Hi CΛ P φ • St.

P P- P "HP ^J tr cn H Φ P P- X tr Φ rt PX φ PJ Pi Ω Φ P, P ⁾ ιq Φ J fu: IQ p- CΛ H • CΛ fD rt pj: p. ΙQ cu: ro Φ P P. tr P cn P P- P ^J H φ no φ n OP "P. n P- P- P ⁾ P- m H rt rt ι-i O l-" rl- cn tr tr P Φ ≥i tr H rt O CL P tr rt Ω 3 rt Φ Ω ιQ H p PJ

Φ φ P ^J * _* o P- P- DJ P- J • Φ PJ P cn ι-i tr. P- tr p: tu: 3 P "p- ^■ P rt P ⁾ to PO o ι-i P" cn rt P- 3 SP rt P ιq P- O

P P- P- &> = r P- N tr tr Hö Φ cn cn j: φ m Φ cn φ P X

Φ iQ P cn φ cn rt φ Φ Hi rt PJ P- Λ ¹ n EP cn cn tr rt H P- P-

P Φ fu: r CL o • φ rt- cn Φ tr P- φ Φ P- cn cn P ^J φ tr P cn H P- P Φ P P- Ω | r Φ Φ P P- φ 3 3 P- n rt Φ rt 3 Φ tr OJ φ Φ H P- Φ cn P φ P- P- cn tr cn - ¹ P P- P ^J

P- P P P P rt cn n rr p- Ω P- cn

P Φ Φ PJ rt tr CL Φ Ω tr PL φ HP φ PJ tr tr rt rt Hi cn rt Φ P

Figure 1 shows a ferroelectric capacitor in cross section from the side.

Figure 2 shows a detector array of ferroelectric capacitors from the side.

Figure 3 shows a method of manufacturing the ferroelectric capacitor.

The capacitor 1 is a ferroelectric capacitor in thin film construction. It consists of two electrode layers 3, 4 and a ferroelectric layer 2 with lead zirconate titanate as the ferroelectric material 10 arranged between the electrode layers 3 and 4. The ferroelectric layer is approximately 900 nm thick and has a base area of approximately 50 × 50 μm ² . The upper electrode layer 3 consists of a chromium-nickel alloy and is 20 nm thick. The lower electrode layer 4 has platinum as the electrode material 12 and is approximately 80 nm thick. The lower electrode layer 4 consists of two sub-regions 6 and 7 which are separated from one another by the trench 5 and are arranged next to one another. The trench 5 is approximately 2 μm wide and is delimited by the sub-regions 6 and 7 of the lower electrode layer 4. The subarea 7 of the lower electrode layer 4 is electrically conductively connected to the upper electrode layer 3 via the metallization 15, which is attached to a lateral surface 16 of the ferroelectric layer 2. The trench 5 has an electrical insulation material 11 made of aluminum oxide. The capacitor 1 is applied via the lower electrode layer 4 to a carrier layer 8 made of silicon oxide of a carrier body 9 made of silicon. The trench 5, which is completely filled with the insulation material 11, is delimited by the partial regions 6 and 7 of the lower electrode layer 4, the ferroelectric layer 2 and the carrier layer 8. The insulation material 11 is located between the ferroelectric layer 2 and the carrier layer 8. ω 00 M ho P ¹ oπ o Oπ o 0π o oπ

PJ Hi HP CL d Ω PL vq H3 ι c 3 HP ¹ ι P CL P-> Φ ι-3 mm N - ϊ ö ü

P Φ 3 P Φ O tr PJ φ Φ φ φ P P- cn> oo φ φ Φ Cn P P rt P P P ß hr | p) • τJ Φ φ

Hi P rt cn Φ tr i ^ q P- ^ Hi PJ rt OP pj: PP rt Hl Hl Z, pj: PJ: pj: 3 P- P ^ rt P ιq 1-1 S Φ P- 3 ιq - ^> p : tr P ^J tr P rt rt rt PJ U5 ^ q ι ι PP Φ φ O Φ PM φ p- φ ι-3 pj: tr φ tu PJ Φ PNO CΛ TJ PP Φ Φ φ tu PO «rt Φ P- Φ cn li ω cn Φ rt Φ P- P ^J P P- rt P- α rt P Ω P "P PJ Oπ PPP φ P PL rt o p. P ^J rt PO Φ Ω Ω P- rf P φ rt P- rt • PJ tr P ⁾ U3 ^ qo 3 3 cn PP φ OP

P> Φ Φ P tr tr P ^J Φ Φ • (l Hi O fi PL tr P- rt Φ Φ o D> J Ω ω> Hi rt P PL

^ q? PM ^• - ^ P ^J tr rt P- ι Φ P cn Φ t? D Φ Ω P- PP rt. rt tr rt - P Φ P ⁾ φ

T rt Φ rt • P P- φ • Ω Φ H <! cn n 3 cn P tr P P Φ Φ P- Φ j W P P

P P P Φ P- P Hi P tr 3 3 o Φ 3 tr rt. Φ Φ § P P Ω P rt P cn

P- l * r OM rt Hi Φ σ Φ Φ P- J P> H φ Cπ P H- p- P- tr OO PJ ⁾

_^ - _^ cn £ rt P cn Φ Φ P- P ⁾ P P- PP rt P- PJH Hi P PJ J rt Φ rt P * <rt

Ω p- ι-i cn ü P Ω cn P PJ: cn Φ Φ rt φ rt P- P 3 O Φ P- P cn - cn o ι-i tr 1-5 O 3 ι-i cn - - - tr CTl cn Ω rt cn P rt Λ ^* cn P cn P Ω OD rt P tr Φ CL PJ Φ rt • Φ H PJ tr pj: P- rt rt P ι? P ¹ P ¹ PL PM

Φ P Φ rr cn: cn P 3 cn P σ P ⁾ P Φ CL CL P ⁾ : rt CΛ. 00 00 3 Φ PJ Φ P »Z

P- Φ P Φ P rt ö h OP rt PL PJ o O tr P- Φ Ω Ω P- cn tr P P- rt CΛ tr cn PP ^J N PJ PL <Φ P- 3 00 PL rt Φ 3 tr PL tr H P- tr rt P ¹ s: NP cn Ω Φ Ω P- rt rt cn P ⁾ OP »q ^• d P ¹ Φ cn P P- 3 cn Φ« P Φ P PL cn tr P tr PJ P- Φ P rt -J 3 Hi P ¹ P Φ CΛ M rt P Ω rt POPPP

Ω P- Hi P- Φ PL P- t? > 3 PJ Ξ 3 P- Ω φ Ω tr P Φ Φ P ^ q CL PJ tr Ω P> Ω ω HO PL P P- tr ιq P- PJ P tr Φ P tr rt pj: CΛ P- 3 Φ ö li tr tr rr ^| χ) rt -JP φ M tr rt cn φ P rf P-! Ω P- rt Φ w rt φ cn

P- rt P ^J rt P ¹ O p cn ι-i cn φ Ω Hl CL Φ O Ω rt CΛ J tr h- ¹ ιQ Φ P ⁾ • rt rt ω ω Φ PJ PL 3 O P- CL tr p: ii P tr PP d P cn P- Φ "cn Φ ö rf M. £> P- p- ι Φ PJ M rt Φ Φ P ¹ CL P- PJ rt O tr P cn rt N cn Φ P> OS? Φ

• PP φ Φ ι-i rt ¹ PJ cn 3 P- Φ PJ tr Φ rt φ P- rt rt P P- rt rt

P ^» P ⁾ PP Φ ι-i P Φ Φ rt cn CL rt li - ¹ Φ PJ φ P- rt HP p Φ rt O rt rt P- Φ o P li CL cn M ι-i π P- Ω M φ PP p rt Φ P "3 p. P cn O?

Oπ ω Ω Ό Ω tr P- et O tr cn <CD cn 3 cn P Φ> PL P- cn P tu P rt

^• - - tr CL P ^J tr N Φ PJ PP ii O φ ö P r Oπ J ω P? P P- rt cn P P- o

• ω Φ PJ li zf P- O cn P- P ^J ii PJ P> • CL rt Ω _* rt tr o Ω P ¹ Hi <i P - Φ PP p- • rt PL 3 rt P ⁾ Hi cn tr tr φ Φ tr P Φ X. tr ι Pi O Φ ö Φ P- Φ r ι-i P ¹ φ PJ rt rt P ⁾ Φ Φ PL 3 ι-i P α O P- p- *! ≤ φ Φ PP "

DJ P- P ι-3 rt O 00 P rt P- tr ^ P ι Φ P- P- PJ PL rt C P- P- p- Φ

CL N Φ PL cn Φ P ¹ OPP p PM PJ rt cn Φ cn ιq cn PO: H 3

P P- CΛ P- tq. -. pj: Φ z Ω ι-i O P Φ 0π Φ rt p cn P O PL cn Φ P Φ

1-1 P ^• d φ Ω rt P P- tr P- J ^ cn PP <J φ M 3 Ω ö P rt cn Pi P

Ω ^ P tr 3 tr rt cn P P- P ⁾ 3 cn Φ 3 N o ^ P ¹ P ¹ - ¹ P> tr P- P- NP rt p O rt Φ φ Φ Φ Ω PL Ω 2, P> • P P- rt P rt) o Φ rt P φ 00 φ P CL ü J

P rt ι- (P- 3 P tr tr P- rt rt PM? T Φ P- • _^ PP Φ φ PN ⁾ J Φ Φ P p- P- tr rt P ¹ P Φ α Φ s: CL O Φ rt P rt ι-3 φ pj: rt rt OO

CL rt P P- cn cn Φ Ω P- 00 CL ι- (PJ ι-i P P- φ CL P s: P P- rt PP ¹ P Ω Φ Φ rt

PJ rt <! Ω ⁾ Ω P tr cn 4i> P- tr Hi Φ P 3 Φ N P- O PJ P>: o CL tr; * r? cn Φ cn P- Φ tr 3 tr Hi rt P PL PJ Φ O 3 CL P Φ P CL P- P> ιq o Φ cn rt rt rt P- cn rt P Φ φ O PJ iQ P P- P- P- P ¹ • Pl 3 P PL Φ o Φ - P rt P- OPP

PJ Hi 3 P ^J. £> P Φ PL Φ ι P PJ> q PP ¹ P ¹ P. Φ PP Φ

> P PJ σi O Φ ιQ Hi tr>s; rt Pt P>: rt rt Φ 3 o cn φ P PJ tr cn ¹ P> tr tr Ω rt ⁾ P- PL O P- 3 ι Φ. P- PJ Hi Ω ü p- rt P g rt PP Φ tr tr Φ φ tr PP Φ Φ PP rt cn P- tr P ⁾ PPP

3 Φ P ι- (PJ P- iQ P- P Φ 3 CL er s: P P- rj Φ rt P P- cn Φ Z PJ P p- P Po PP φ P Φ li P- Φ 3 J 0 ⁾ o PP ⁾ α Ω φ • <iQ

P P- "P- rt φ rt Hi PP P- P ⁾ P ^J tr P P- rt Φ tr P cn p- P o pj: cn Φ ι-i P- Φ Hi rt rt Φ J rt rt rt CL rg P- Ω Ω P- P> tu s: P>: P P. Φ Φ P ¹ P- tr. Φ rv> IV)

3 φ CL tr tr P ιq O: P- Ω 3 P P M Φ Φ CΩ P P "

O φ Φ Φ Φ Φ tr P tr o P ¹ Φ P- s; P h- ¹ σ P-

X ι- <cn 3 P Φ CL φ X cn P PJ P-) ⁾ P P-

P- P ¹ "P- P P- cn cn

P ^ PL P rt

reacts with a lead oxide present in the lead zirconate titanate or hardly reacts, a lead zirconate titanate layer is formed which essentially has the same composition and the same crystal structure. Essentially means that slight deviations of up to 1%, for example in the composition, are permissible here.

Further steps for producing the ferroelectric capacitor, which will not be discussed further, include the application of the upper electrode 3 from FIG

Chromium-nickel alloy and the application of the metallization to produce the electrical contact between the partial region 7 of the lower electrode layer 4 and the upper electrode layer 3.

Claims

claims

1. capacitor (1), having a layer structure with at least two electrode layers (3, 4) and - a ferroelectric layer (2) with ferroelectric material (10) arranged between the electrode layers (3, 4), at least one of the electrode layers (4 ) has at least one trench (5) for electrical insulation of at least two trenches arranged next to one another

(5) delimiting sub-areas (6, 7) of

Electrode layer (4), and the trench (5) has an electrical insulation material (11) different from the ferroelectric material (10), characterized in that the trench (5) is delimited by the ferroelectric layer (2).

2. The capacitor of claim 1, wherein the ferroelectric material (10) comprises lead zirconate titanate.

3. The capacitor of claim 1 or 2, wherein the ferroelectric material (10) has a substantially uniform composition and a uniform crystal structure.

4. Capacitor according to one of claims 1 to 3, wherein at least the electrode layer (4) with the

Portions (5, 6) has an electrode material (12) with platinum.

5. Capacitor according to one of claims 1 to 4, wherein at least the electrode layer (4) with the

Sub-areas (5, 6) on a carrier layer (8) with electrically insulating carrier material (13) is arranged.

6. A capacitor according to any one of claims 1 to 5, wherein the insulation material (11) and / or the carrier material (13) comprise at least one oxide.

7. The capacitor of claim 6, wherein the oxide at least one from the group aluminum and / or boron and / or phosphorus and / or silicon and / or tantalum and / or

Titanium and / or zirconium selected element.

8. The method for producing the capacitor according to any one of claims 1 to 7, by a) providing a carrier layer with electrically insulating carrier material and b) producing the electrode layer with the trench, the

Insulation material and the sections on the

Support layer.

9. The method according to claim 8, wherein the following steps are carried out to produce the electrode layer with the trench, the insulation material and the subregions: c) application of a layer of electrode material on the carrier layer, d) removal of electrode material from the layer of electrode material, so that a Trench is formed in the layer of electrode material, which is delimited by two subregions of the layer of electrode material and the carrier layer, and e) filling the trench with the insulation material.

10. The method according to claim 9, wherein a vapor deposition process is carried out to apply the layer of electrode material and / or to fill the trench with the insulation material.

11. The method according to claim 9 or 10, wherein an etching process is carried out to remove the electrode material.

12. The method according to any one of claims 9 to 11, wherein after filling the trench with the insulation material, a smoothing of a surface is carried out, which is formed jointly by the insulation material and the partial regions of the electrode layer and which faces away from the carrier layer.

13. The method of claim 12, wherein polishing is performed to smooth the surface.

14. Use of the capacitor according to one of claims 1 to 7 as a detector element for the detection of thermal radiation