WO2002059968A3 - Integrated circuits protected against reverse engineering using an apparent metal contact line terminating on field oxide and method - Google Patents

Integrated circuits protected against reverse engineering using an apparent metal contact line terminating on field oxide and method Download PDF

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Publication number
WO2002059968A3
WO2002059968A3 PCT/US2002/000123 US0200123W WO02059968A3 WO 2002059968 A3 WO2002059968 A3 WO 2002059968A3 US 0200123 W US0200123 W US 0200123W WO 02059968 A3 WO02059968 A3 WO 02059968A3
Authority
WO
WIPO (PCT)
Prior art keywords
field oxide
integrated circuits
reverse engineering
metal contact
protected against
Prior art date
Application number
PCT/US2002/000123
Other languages
French (fr)
Other versions
WO2002059968B1 (en
WO2002059968A2 (en
Inventor
Lap-Wai Chow
James P Baukas
William M Clark Jr
Original Assignee
Hrl Lab Llc
Lap-Wai Chow
James P Baukas
William M Clark Jr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hrl Lab Llc, Lap-Wai Chow, James P Baukas, William M Clark Jr filed Critical Hrl Lab Llc
Priority to GB0316906A priority Critical patent/GB2393851B/en
Priority to JP2002560197A priority patent/JP4920862B2/en
Priority to DE10295878T priority patent/DE10295878T5/en
Priority to AU2002234203A priority patent/AU2002234203A1/en
Publication of WO2002059968A2 publication Critical patent/WO2002059968A2/en
Publication of WO2002059968A3 publication Critical patent/WO2002059968A3/en
Publication of WO2002059968B1 publication Critical patent/WO2002059968B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H01L23/573—Protection from inspection, reverse engineering or tampering using passive means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Semiconducting devices, including integrated circuits, protected from reverse engineering comprisingmetal traces leading to field oxide. Metallization usually leads to the gate, source or drain areas of thecircuit, but not to the insulating field oxide, thus misleading a reverse engineer. A method for fabricatingsuch devices.
PCT/US2002/000123 2001-01-24 2002-01-03 Integrated circuits protected against reverse engineering using an apparent metal contact line terminating on field oxide and method WO2002059968A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB0316906A GB2393851B (en) 2001-01-24 2002-01-03 Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide
JP2002560197A JP4920862B2 (en) 2001-01-24 2002-01-03 Integrated circuit protected against reverse engineering using apparent metal contact wires terminated on field oxide and method for manufacturing the same
DE10295878T DE10295878T5 (en) 2001-01-24 2002-01-03 Reverse engineering protected integrated circuits and methods of making the same using a visible metal contact line ending in field oxide
AU2002234203A AU2002234203A1 (en) 2001-01-24 2002-01-03 Integrated circuits protected against reverse engineering using an apparent metal contact line terminating on field oxide and method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/768,904 US7294935B2 (en) 2001-01-24 2001-01-24 Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide
US09/768,904 2001-01-24

Publications (3)

Publication Number Publication Date
WO2002059968A2 WO2002059968A2 (en) 2002-08-01
WO2002059968A3 true WO2002059968A3 (en) 2002-11-14
WO2002059968B1 WO2002059968B1 (en) 2003-05-22

Family

ID=25083828

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/000123 WO2002059968A2 (en) 2001-01-24 2002-01-03 Integrated circuits protected against reverse engineering using an apparent metal contact line terminating on field oxide and method

Country Status (7)

Country Link
US (1) US7294935B2 (en)
JP (3) JP4920862B2 (en)
AU (1) AU2002234203A1 (en)
DE (1) DE10295878T5 (en)
GB (1) GB2393851B (en)
TW (1) TW526608B (en)
WO (1) WO2002059968A2 (en)

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* Cited by examiner, † Cited by third party
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US7294935B2 (en) * 2001-01-24 2007-11-13 Hrl Laboratories, Llc Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide
US6897535B2 (en) * 2002-05-14 2005-05-24 Hrl Laboratories, Llc Integrated circuit with reverse engineering protection
US7049667B2 (en) 2002-09-27 2006-05-23 Hrl Laboratories, Llc Conductive channel pseudo block process and circuit to inhibit reverse engineering
WO2004055868A2 (en) * 2002-12-13 2004-07-01 Hrl Laboratories, Llc Integrated circuit modification using well implants
US7242063B1 (en) 2004-06-29 2007-07-10 Hrl Laboratories, Llc Symmetric non-intrusive and covert technique to render a transistor permanently non-operable
US8168487B2 (en) 2006-09-28 2012-05-01 Hrl Laboratories, Llc Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer
US8418091B2 (en) 2009-02-24 2013-04-09 Syphermedia International, Inc. Method and apparatus for camouflaging a standard cell based integrated circuit
US9735781B2 (en) 2009-02-24 2017-08-15 Syphermedia International, Inc. Physically unclonable camouflage structure and methods for fabricating same
US8151235B2 (en) * 2009-02-24 2012-04-03 Syphermedia International, Inc. Camouflaging a standard cell based integrated circuit
US8510700B2 (en) 2009-02-24 2013-08-13 Syphermedia International, Inc. Method and apparatus for camouflaging a standard cell based integrated circuit with micro circuits and post processing
US10691860B2 (en) 2009-02-24 2020-06-23 Rambus Inc. Secure logic locking and configuration with camouflaged programmable micro netlists
US8111089B2 (en) * 2009-05-28 2012-02-07 Syphermedia International, Inc. Building block for a secure CMOS logic cell library
US9218511B2 (en) 2011-06-07 2015-12-22 Verisiti, Inc. Semiconductor device having features to prevent reverse engineering
US8975748B1 (en) 2011-06-07 2015-03-10 Secure Silicon Layer, Inc. Semiconductor device having features to prevent reverse engineering
US9287879B2 (en) * 2011-06-07 2016-03-15 Verisiti, Inc. Semiconductor device having features to prevent reverse engineering
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WO2015038587A1 (en) 2013-09-11 2015-03-19 New York University System, method and computer-accessible medium for fault analysis driven selection of logic gates to be camouflaged
US9479176B1 (en) 2013-12-09 2016-10-25 Rambus Inc. Methods and circuits for protecting integrated circuits from reverse engineering
US11695011B2 (en) 2018-05-02 2023-07-04 Nanyang Technological University Integrated circuit layout cell, integrated circuit layout arrangement, and methods of forming the same
US10923596B2 (en) 2019-03-08 2021-02-16 Rambus Inc. Camouflaged FinFET and method for producing same
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JP7036102B2 (en) 2019-07-25 2022-03-15 カシオ計算機株式会社 Electronics and watches

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Also Published As

Publication number Publication date
GB2393851A (en) 2004-04-07
JP2004518295A (en) 2004-06-17
TW526608B (en) 2003-04-01
GB0316906D0 (en) 2003-08-20
JP5134615B2 (en) 2013-01-30
JP4920862B2 (en) 2012-04-18
US7294935B2 (en) 2007-11-13
JP2010103550A (en) 2010-05-06
US20020096776A1 (en) 2002-07-25
AU2002234203A1 (en) 2002-08-06
WO2002059968B1 (en) 2003-05-22
JP2008010887A (en) 2008-01-17
GB2393851B (en) 2005-07-13
WO2002059968A2 (en) 2002-08-01
DE10295878T5 (en) 2004-07-22

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