WO2002059968B1 - Integrated circuits protected against reverse engineering using an apparent metal contact line terminating on field oxide and method - Google Patents

Integrated circuits protected against reverse engineering using an apparent metal contact line terminating on field oxide and method

Info

Publication number
WO2002059968B1
WO2002059968B1 PCT/US2002/000123 US0200123W WO02059968B1 WO 2002059968 B1 WO2002059968 B1 WO 2002059968B1 US 0200123 W US0200123 W US 0200123W WO 02059968 B1 WO02059968 B1 WO 02059968B1
Authority
WO
WIPO (PCT)
Prior art keywords
field oxide
integrated circuits
oxide layer
reverse engineering
metal contact
Prior art date
Application number
PCT/US2002/000123
Other languages
French (fr)
Other versions
WO2002059968A2 (en
WO2002059968A3 (en
Inventor
Lap-Wai Chow
James P Baukas
William M Clark Jr
Original Assignee
Hrl Lab Llc
Lap-Wai Chow
James P Baukas
William M Clark Jr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hrl Lab Llc, Lap-Wai Chow, James P Baukas, William M Clark Jr filed Critical Hrl Lab Llc
Priority to DE10295878T priority Critical patent/DE10295878T5/en
Priority to AU2002234203A priority patent/AU2002234203A1/en
Priority to GB0316906A priority patent/GB2393851B/en
Priority to JP2002560197A priority patent/JP4920862B2/en
Publication of WO2002059968A2 publication Critical patent/WO2002059968A2/en
Publication of WO2002059968A3 publication Critical patent/WO2002059968A3/en
Publication of WO2002059968B1 publication Critical patent/WO2002059968B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H01L23/573—Protection from inspection, reverse engineering or tampering using passive means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Semiconducting devices, including integrated circuits, protected from reverse engineering comprisingmetal traces leading to field oxide. Metallization usually leads to the gate, source or drain areas of thecircuit, but not to the insulating field oxide, thus misleading a reverse engineer. A method for fabricatingsuch devices.

Claims

AMENDED CLAIMS
[received by the International Bureau on 21 November 2002 (21.11.02); new claims 17-20 added; remaining claims unchanged (1 page)]
14. The method as claimed in Claim 13, wherein said field oxide layer further comprises silicon oxide.
15. The method as claimed in Claims 13 or 14, wherein said semiconducting device comprises integrated circuits.
16. The method as claimed in Claim 15, wherein said integrated circuits further comprise complementary metal oxide-semiconductor integrated circuits.
17. The device as claimed in any one of Claims 1, 2, 3, 4, 9, 10, 11, or 12, wherein said field oxide layer has an uppermost side, said metal plug contact being disposed on said uppermost side of said field oxide layer.
18. The method as claimed in any one of Claims 5, 6, 7, 8, 13, 14, 15, or 16, wherein said field oxide layer has an uppermost side, said metal plug contact being disposed on said uppermost side of said field oxide layer.
19. The device as claimed in any one of Claims 1, 2, 3, 4, 9, 10, 11, or 12, wherein said metal plug contact contacts said field oxide layer.
20. The method as claimed in any one of Claims 5, 6, 7, 8, 13, 14, 15, or 16, wherein said metal plug contact contacts said field oxide layer.
PCT/US2002/000123 2001-01-24 2002-01-03 Integrated circuits protected against reverse engineering using an apparent metal contact line terminating on field oxide and method WO2002059968A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE10295878T DE10295878T5 (en) 2001-01-24 2002-01-03 Reverse engineering protected integrated circuits and methods of making the same using a visible metal contact line ending in field oxide
AU2002234203A AU2002234203A1 (en) 2001-01-24 2002-01-03 Integrated circuits protected against reverse engineering using an apparent metal contact line terminating on field oxide and method
GB0316906A GB2393851B (en) 2001-01-24 2002-01-03 Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide
JP2002560197A JP4920862B2 (en) 2001-01-24 2002-01-03 Integrated circuit protected against reverse engineering using apparent metal contact wires terminated on field oxide and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/768,904 US7294935B2 (en) 2001-01-24 2001-01-24 Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide
US09/768,904 2001-01-24

Publications (3)

Publication Number Publication Date
WO2002059968A2 WO2002059968A2 (en) 2002-08-01
WO2002059968A3 WO2002059968A3 (en) 2002-11-14
WO2002059968B1 true WO2002059968B1 (en) 2003-05-22

Family

ID=25083828

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/000123 WO2002059968A2 (en) 2001-01-24 2002-01-03 Integrated circuits protected against reverse engineering using an apparent metal contact line terminating on field oxide and method

Country Status (7)

Country Link
US (1) US7294935B2 (en)
JP (3) JP4920862B2 (en)
AU (1) AU2002234203A1 (en)
DE (1) DE10295878T5 (en)
GB (1) GB2393851B (en)
TW (1) TW526608B (en)
WO (1) WO2002059968A2 (en)

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US7294935B2 (en) * 2001-01-24 2007-11-13 Hrl Laboratories, Llc Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide
US6897535B2 (en) * 2002-05-14 2005-05-24 Hrl Laboratories, Llc Integrated circuit with reverse engineering protection
US7049667B2 (en) 2002-09-27 2006-05-23 Hrl Laboratories, Llc Conductive channel pseudo block process and circuit to inhibit reverse engineering
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Also Published As

Publication number Publication date
WO2002059968A2 (en) 2002-08-01
GB0316906D0 (en) 2003-08-20
JP2004518295A (en) 2004-06-17
JP4920862B2 (en) 2012-04-18
JP5134615B2 (en) 2013-01-30
GB2393851A (en) 2004-04-07
AU2002234203A1 (en) 2002-08-06
TW526608B (en) 2003-04-01
WO2002059968A3 (en) 2002-11-14
JP2008010887A (en) 2008-01-17
JP2010103550A (en) 2010-05-06
GB2393851B (en) 2005-07-13
US20020096776A1 (en) 2002-07-25
US7294935B2 (en) 2007-11-13
DE10295878T5 (en) 2004-07-22

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