WO2002061940A1 - Cmos power amplifier with reduced harmonics and improved efficiency - Google Patents

Cmos power amplifier with reduced harmonics and improved efficiency Download PDF

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Publication number
WO2002061940A1
WO2002061940A1 PCT/IB2002/000177 IB0200177W WO02061940A1 WO 2002061940 A1 WO2002061940 A1 WO 2002061940A1 IB 0200177 W IB0200177 W IB 0200177W WO 02061940 A1 WO02061940 A1 WO 02061940A1
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WO
WIPO (PCT)
Prior art keywords
output
amplifier
power amplifier
differential
cmos
Prior art date
Application number
PCT/IB2002/000177
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French (fr)
Inventor
Timothy C. Kuo
Bruce B. Lusignan
Original Assignee
Koninklijke Philips Electronics N.V.
Board Of Trustees Of The Leland Stanford Junior University
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Application filed by Koninklijke Philips Electronics N.V., Board Of Trustees Of The Leland Stanford Junior University filed Critical Koninklijke Philips Electronics N.V.
Priority to EP02737632A priority Critical patent/EP1358713A1/en
Priority to JP2002561366A priority patent/JP2004519126A/en
Publication of WO2002061940A1 publication Critical patent/WO2002061940A1/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2178—Class D power amplifiers; Switching amplifiers using more than one switch or switching amplifier in parallel or in series
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H03F3/604—Combinations of several amplifiers using FET's

Definitions

  • This invention relates to the field of electronics, and in particular to a power amplifier for use in a CMOS device, such as a wireless transmitter.
  • CMOS technology is commonly used for devices that require minimal power consumption, such as handheld telephones.
  • Power amplifiers such as used in the output stage of a wireless transmitter, however, are commonly fabricated with GaAs, Bipolar, or PHEMT technologies.
  • CMOS technology advances, it is becoming an attractive alternative for use in power amplifiers, based on its small feature sizes, low cost, and relatively high efficiency (low power loss). Because CMOS transistors are small and the cost of fabrication is low, complex designs that may not be economically feasible in other technologies are often quite feasible in CMOS.
  • Fig. 1 illustrates an example prior art power amplifier 100, commonly referred to as a Class F power amplifier.
  • a Class F power amplifier "High efficiency power amplifier for microwave and millimeter frequencies" by William S. Kopp and Sam D. Pritchett, published in the IEEE MTT Symposium Digest, 1989, pp. 857-858, presents the principles of a Class F power amplifier, and is incorporated by reference herein.
  • the transmission line T is tuned to short even-order harmonics, and a match network Co, Lo, CL is designed to match the load RL, so as to pass the fundamental frequency and attenuate the third-order harmonics.
  • the capacitor CL being parallel to RL, reduces the impedance associated with the load RL, while Lo cancels any remaining reactive impedance seen by the transistor.
  • the signal is AC coupled through the capacitor Co.
  • the conventional Class F power amplifier substantially attenuates the even harmonics, via the transmission line T, and the third harmonic via the match network Co, Lo, CL, but the attenuation provided for the third harmonic is often insufficient for some applications.
  • the third harmonic remains at a high level is that, with a quarter wave transmission line T to cancel the even order harmonics, the impedance of the line T is minimum with respect to the second harmonic, but maximum with respect to the third harmonic. Therefore, third harmonics actually increase at the drain of the transistor Ml, and, even with the match-filtering, third-order harmonics at the output of the amplifier can still be high.
  • the precise tuning of the transmission line T to correspond to the second- order harmonics can affect the attenuation that is achievable for the even-order harmonics. Improved attenuation of harmonics properly shapes the output waveform, and also results in higher efficiencies, as less power is wasted propagating unwanted harmonics.
  • Efficiency enhancement over a wide range of power is essential for today's wireless applications, because mobile terminals do not usually transmit at maximum output power.
  • a high energy efficiency results in longer battery-life, reduces the requirements for heat dissipation, and so on.
  • CMOS Class F amplifier that uses a differential input to eliminate even-order harmonics, thereby avoiding the need for circuits that are tuned to the second harmonic. This also minimizes the sensitivity of the design to changes in the second harmonic frequency and/or the particular component values selected for the tuned circuit. Third-order harmonics are reduced by controlling the phase relationship between the differential inputs. Additional efficiency is achieved by dynamically controlling the impedance of the amplifier as a function of output power level.
  • Fig. 1 illustrates an example schematic of a prior art Class F power amplifier.
  • Fig. 2 illustrates an example schematic of a CMOS Class F power amplifier in accordance with this invention.
  • Fig. 3 illustrates an example block diagram of a wireless transmitter in accordance with this invention.
  • Figs. 4A and 4B illustrate example timing diagrams associated with differential input signals in accordance with this invention.
  • Fig. 5 illustrates an example schematic of a further enhanced CMOS Class F power amplifier in accordance with this invention.
  • Fig. 6 illustrates an example timing diagram associated with differential and ancillary input signals for dynamically adjusting the impedance of the power amplifier of Fig. 5 in accordance with this invention.
  • Fig. 2 illustrates an example schematic of a CMOS Class F power amplifier 200 in accordance with this invention.
  • the input signal is split into differential input signals Ninn and Ninp, and each of the input signals Ninn and Ninp are provided to a corresponding power amplifier stage 21 On, 21 Op.
  • the output Non, Nop of each stage 21 On, 21 Op feed the primary coil of an output transformer K, and the secondary coil of the output transformer K feeds the load RL.
  • Fig. 3 illustrates an example block diagram of a wireless transmitter 300 that includes a power amplifier 200 in accordance with this invention.
  • a modulator 330 provides the input to the power amplifier 200, by modulating the output of an audio amplifier 310 with a carrier signal from an RF oscillator 320.
  • the load RL of Fig. 2 corresponds to an antenna that transmits the output of the power amplifier 200.
  • the power amplifier 200 is designed to suppress the harmonics of the carrier signal.
  • the pulse duration of each 41 On, 41 Op of the out of phase signals Ninn and Vinp is controlled to be less than 180 degrees, and preferably to 120 degrees.
  • the splitter 220 of Fig. 2 asserts the Vinn signal for one-third of the input signal period, and, at each negative zero-crossing, the splitter 220 asserts the Ninp signal for one-third of the input signal period.
  • the duration of one-third of the input signal period for each of the differential input signals has been found to substantially reduce the third-order harmonics, while still maintaining the second-order harmonic cancellation at the output transformer K of Fig. 2.
  • the output match stages Con, Lon, CLn, RL and Cop, Lop, CLp, and RL of the power amplifier 200 of Fig. 2 can be designed to further reduce, for example, fifth-order harmonics, using filter techniques common in the art.
  • Fig. 5 illustrates an example schematic of a further enhanced CMOS Class F power amplifier 200' in accordance with this invention. As taught in "A NEW HIGH
  • Fig. 6 illustrates an example timing diagram associated with differential and ancillary input signals for dynamically adjusting the impedance of the power amplifier of Fig. 5 in accordance with this invention.
  • the ancillary inputs Vinn2 and Vinp2 that drive the transistors Mn2 and Mp2 of Fig. 5 are out of phase with the corresponding inputs Vinn and Vinp, and at a reduced magnitude.
  • the precise duration of the pulses on ancillary inputs Vinn2 and Vinp2 is not material; in a preferred embodiment, the durations of the pulses on the ancillary inputs Vinn2 and Vinp2 correspond to the durations of the pulses on the primary inputs Vinp and Vinn, to simplify the circuit design.
  • the amplitudes of the ancillary inputs Ninn2 and Ninp2 are set so as to provide an increasing circuit impedance with decreasing output power levels, thereby providing a substantially constant efficiency over varying output power levels.
  • Fig. 4B illustrates an alternative means of dynamically adjusting the impedance of the circuit of Fig. 2 by applying ancillary pulses 420p and 420nto the input voltages Ninn and Ninp. Because each stage in a differential circuit typically only operates during half a cycle, the ancillary pulses 420p and 420n can be applied during the stages' traditional "off state, so that the transistors Mp, Mn of Fig. 2 can be used in lieu of the transistors Mn2, Mp2 of Fig. 5, respectively, to adjust the impedance of the network, during their conventional "off state.

Abstract

A CMOS Class F amplifier uses a differential input to eliminate even-order harmonics, thereby avoiding the need for circuits that are tuned to the second harmonic. This also minimizes the sensitivity of the design to changes in the second harmonic frequency and/or the particular component values selected for the tuned circuit. Third-order harmonics are reduced by controlling the phase relationship between the differential inputs. Additional efficiency is achieved by dynamically controlling the impedance of the amplifier as a function of output power level.

Description

CMOS power amplifier with reduced harmonics and improved efficiency
This invention relates to the field of electronics, and in particular to a power amplifier for use in a CMOS device, such as a wireless transmitter.
CMOS technology is commonly used for devices that require minimal power consumption, such as handheld telephones. Power amplifiers, such as used in the output stage of a wireless transmitter, however, are commonly fabricated with GaAs, Bipolar, or PHEMT technologies. As CMOS technology advances, it is becoming an attractive alternative for use in power amplifiers, based on its small feature sizes, low cost, and relatively high efficiency (low power loss). Because CMOS transistors are small and the cost of fabrication is low, complex designs that may not be economically feasible in other technologies are often quite feasible in CMOS.
Fig. 1 illustrates an example prior art power amplifier 100, commonly referred to as a Class F power amplifier. "High efficiency power amplifier for microwave and millimeter frequencies" by William S. Kopp and Sam D. Pritchett, published in the IEEE MTT Symposium Digest, 1989, pp. 857-858, presents the principles of a Class F power amplifier, and is incorporated by reference herein. In a preferred embodiment, the transmission line T is tuned to short even-order harmonics, and a match network Co, Lo, CL is designed to match the load RL, so as to pass the fundamental frequency and attenuate the third-order harmonics. The capacitor CL, being parallel to RL, reduces the impedance associated with the load RL, while Lo cancels any remaining reactive impedance seen by the transistor. The signal is AC coupled through the capacitor Co.
The conventional Class F power amplifier substantially attenuates the even harmonics, via the transmission line T, and the third harmonic via the match network Co, Lo, CL, but the attenuation provided for the third harmonic is often insufficient for some applications. One of the reasons that the third harmonic remains at a high level is that, with a quarter wave transmission line T to cancel the even order harmonics, the impedance of the line T is minimum with respect to the second harmonic, but maximum with respect to the third harmonic. Therefore, third harmonics actually increase at the drain of the transistor Ml, and, even with the match-filtering, third-order harmonics at the output of the amplifier can still be high. Also, the precise tuning of the transmission line T to correspond to the second- order harmonics can affect the attenuation that is achievable for the even-order harmonics. Improved attenuation of harmonics properly shapes the output waveform, and also results in higher efficiencies, as less power is wasted propagating unwanted harmonics.
Efficiency enhancement over a wide range of power is essential for today's wireless applications, because mobile terminals do not usually transmit at maximum output power. A high energy efficiency results in longer battery-life, reduces the requirements for heat dissipation, and so on.
It is an object of this invention to reduce the harmonics produced in a Class F amplifier. It is another object of this invention to increase the efficiency of a Class F amplifier. It is a further object of this invention to provide the reduced harmonics and increased efficiency in a CMOS embodiment of a Class F amplifier. It is a further object of this invention to provide increased efficiency across a wide range of power output from a Class F amplifier.
These objects and others are achieved by providing a CMOS Class F amplifier that uses a differential input to eliminate even-order harmonics, thereby avoiding the need for circuits that are tuned to the second harmonic. This also minimizes the sensitivity of the design to changes in the second harmonic frequency and/or the particular component values selected for the tuned circuit. Third-order harmonics are reduced by controlling the phase relationship between the differential inputs. Additional efficiency is achieved by dynamically controlling the impedance of the amplifier as a function of output power level.
The invention is explained in further detail, and by way of example, with reference to the accompanying drawings wherein:
Fig. 1 illustrates an example schematic of a prior art Class F power amplifier. Fig. 2 illustrates an example schematic of a CMOS Class F power amplifier in accordance with this invention.
Fig. 3 illustrates an example block diagram of a wireless transmitter in accordance with this invention. Figs. 4A and 4B illustrate example timing diagrams associated with differential input signals in accordance with this invention.
Fig. 5 illustrates an example schematic of a further enhanced CMOS Class F power amplifier in accordance with this invention.
Fig. 6 illustrates an example timing diagram associated with differential and ancillary input signals for dynamically adjusting the impedance of the power amplifier of Fig. 5 in accordance with this invention.
Throughout the drawings, the same reference numerals or characters indicate similar or corresponding features or functions.
Fig. 2 illustrates an example schematic of a CMOS Class F power amplifier 200 in accordance with this invention. As illustrated, the input signal is split into differential input signals Ninn and Ninp, and each of the input signals Ninn and Ninp are provided to a corresponding power amplifier stage 21 On, 21 Op. The output Non, Nop of each stage 21 On, 21 Op feed the primary coil of an output transformer K, and the secondary coil of the output transformer K feeds the load RL.
Because the output signals Non, Nop are out of phase with each other, even- order harmonics are eliminated at the transformer K, thereby eliminating the need to precisely tune the transmission networks Tn, Tp to the second harmonic frequency and/or thereby minimizing the dependency of the even-order attenuation on the component values in the transmission networks Tn, Tp. Because the differential input provides for a cancellation of the even harmonics, the transmission lines Tn, Tp need not be tuned to the second harmonic, thereby avoiding the dissipation of power that is caused by the effective shorting of the second harmonic to ground in a conventional Class F amplifier.
Fig. 3 illustrates an example block diagram of a wireless transmitter 300 that includes a power amplifier 200 in accordance with this invention. A modulator 330 provides the input to the power amplifier 200, by modulating the output of an audio amplifier 310 with a carrier signal from an RF oscillator 320. In this example, the load RL of Fig. 2 corresponds to an antenna that transmits the output of the power amplifier 200. To comply with existing transmission standards, and to maximize the transmission efficiency, the power amplifier 200 is designed to suppress the harmonics of the carrier signal.
As noted above, even-order harmonics are substantially reduced via the differential structure of the power amplifier 200. Third-order harmonics are reduced by controlling the phase relationship, and pulse duration of the input signals Ninn and Ninp, as illustrated in Fig. 4 A. In a preferred embodiment, the pulse duration of each 41 On, 41 Op of the out of phase signals Ninn and Vinp is controlled to be less than 180 degrees, and preferably to 120 degrees. For example, at each positive zero-crossing of the input signal, the splitter 220 of Fig. 2 asserts the Vinn signal for one-third of the input signal period, and, at each negative zero-crossing, the splitter 220 asserts the Ninp signal for one-third of the input signal period. The duration of one-third of the input signal period for each of the differential input signals has been found to substantially reduce the third-order harmonics, while still maintaining the second-order harmonic cancellation at the output transformer K of Fig. 2. Optionally, because the third-order harmonics are reduced by controlling the pulse width, the output match stages Con, Lon, CLn, RL and Cop, Lop, CLp, and RL of the power amplifier 200 of Fig. 2 can be designed to further reduce, for example, fifth-order harmonics, using filter techniques common in the art.
Fig. 5 illustrates an example schematic of a further enhanced CMOS Class F power amplifier 200' in accordance with this invention. As taught in "A NEW HIGH
EFFICIENCY POWER AMPLIFIER FOR MODULATED WAVES" by W. H. Doherty, in the Proceedings of the Institute of Radio Engineers, Volume 24, Number 9, published in September 1936, and incorporated by reference herein, the efficiency of a power amplifier can be improved by varying the circuit impedance over the modulation cycle. As illustrated in Fig. 5, transistors Mn2 and Mp2 are added to increase the circuit impedance at lower output power levels, to improve the efficiency performance of the power amplifier 200'.
Fig. 6 illustrates an example timing diagram associated with differential and ancillary input signals for dynamically adjusting the impedance of the power amplifier of Fig. 5 in accordance with this invention. As illustrated, the ancillary inputs Vinn2 and Vinp2 that drive the transistors Mn2 and Mp2 of Fig. 5 are out of phase with the corresponding inputs Vinn and Vinp, and at a reduced magnitude. The precise duration of the pulses on ancillary inputs Vinn2 and Vinp2 is not material; in a preferred embodiment, the durations of the pulses on the ancillary inputs Vinn2 and Vinp2 correspond to the durations of the pulses on the primary inputs Vinp and Vinn, to simplify the circuit design. The amplitudes of the ancillary inputs Ninn2 and Ninp2 are set so as to provide an increasing circuit impedance with decreasing output power levels, thereby providing a substantially constant efficiency over varying output power levels.
Fig. 4B illustrates an alternative means of dynamically adjusting the impedance of the circuit of Fig. 2 by applying ancillary pulses 420p and 420nto the input voltages Ninn and Ninp. Because each stage in a differential circuit typically only operates during half a cycle, the ancillary pulses 420p and 420n can be applied during the stages' traditional "off state, so that the transistors Mp, Mn of Fig. 2 can be used in lieu of the transistors Mn2, Mp2 of Fig. 5, respectively, to adjust the impedance of the network, during their conventional "off state.
The foregoing merely illustrates the principles of the invention. It will thus be appreciated that those skilled in the art will be able to devise various arrangements which, although not explicitly described or shown herein, embody the principles of the invention and are thus within the spirit and scope of the following claims.

Claims

CLAIMS:
1. A power amplifier (200), comprising:
- a first CMOS amplifier stage (20 In) having an input and an output;
- a second CMOS amplifier stage (20 lp) having an input and an output; and
- a transformer (K) that includes: - a primary coil having a first and second terminal, the first terminal being operably coupled to the output of the first CMOS amplifier stage (20 In), and the second terminal being operably coupled to the output of the second CMOS amplifier stage (201p), and
- a secondary coil that provides an output of the power amplifier (200); wherein the inputs of the first (21 On) and the second (21 Op) CMOS amplifier stages correspond to differential input signals (Vinn, Vinp) of a signal input, thereby substantially attenuating even-order harmonics of the signal input.
2. The power amplifier (200) of claim 1, wherein the differential input signals (Vinn, Vinp) are each configured to provide a pulse (41 On, 41 Op) having a duration that is less than half a cycle period of the signal input.
3. The power amplifier (200) of claim 2, wherein the duration of the pulse (41 On, 41 Op) of each differential input is substantially equal to one-third of the cycle period of the signal input, thereby substantially attenuating a third-order harmonic of the signal input.
4. The power amplifier (200) of claim 1, wherein each of the first (21 On) and second (21 Op) CMOS amplifier stages include:
- a CMOS transistor (Mn, Mp) having a gate that receives the input of the amplifier stage, and
- a match network (Con, Lon, CLn; Cop, Lop, CLp) that is operably coupled to an output of the CMOS transistor (Mn, Mp) and provides the output of the amplifier stage (210n, 210p), based on a resistance associated with a load (RL) of the power amplifier (200).
5. The power amplifier (200) of claim 4, wherein the match network (Con, Lon, CLn; Cop, Lop, CLp) includes
- a series arrangement of a first capacitor (Co) and an inductor (Lo), operably coupled between the output of the CMOS transistor (Mn, Mp) and the output of the amplifier stage (210n, 210p), and
- a second capacitor (CL), operably coupled between the output of the amplifier stage (21 On, 21 Op) and a reference potential.
6. The power amplifier (200) of claim 4, wherein each of the first (21 On) and second (21 Op) CMOS amplifier stages also include a transmission line (Tn, Tp), operably coupled between the output of the CMOS transistor (Mn, Mp) and a reference potential.
7. The power amplifier (200) of claim 4, wherein the differential input signals (Vinn, Vinp) are each configured to provide a pulse (41 On, 41 Op) having a duration that is less than half a cycle period of the signal input.
8. The power amplifier (200) of claim 7, wherein the duration of the pulse (41 On, 41 Op) of each differential input is substantially equal to one-third of the cycle period of the signal input, thereby substantially attenuating a third-order harmonic of the signal input.
9. The power amplifier (200) of claim 8, wherein the match network (Con, Lon, CLn; Cop, Lop, CLp) is configured to substantially attenuate a fifth-order harmonic of the signal input.
10. The power amplifier (200) of claim 4, wherein each of the first (21 On) and second (21 Op) CMOS amplifier stages also include an ancillary transistor (Mn2, Mp2), operably coupled to the output of the CMOS transistor (Mn, Mp), that is configured to dynamically affect an impedance associated with the amplifier stage (21 On, 21 Op), based on a power output level of the power amplifier (200).
11. The power amplifier (200) of claim 4, wherein each of the differential input signals (Vinn, Vinp) includes an ancillary pulse (420n, 420p) that dynamically affects an impedance associated with the amplifier stage (21 On, 21 Op), based on a power output level of the power amplifier (200).
12. A wireless transmitter comprising:
- an audio amplifier (310),
- an RF oscillator (320), - a modulator (330), operably coupled to the audio amplifier (310) and the RF oscillator (320), that is configured to provide a modulated carrier signal, and
- a power amplifier (200), operably coupled to the modulator (330), that is configured to receive the modulated carrier signal and to produce an amplified output signal; wherein the power amplifier (200) includes: - a splitter (220) that provides a first differential signal (Vinn) and a second differential signal (Vinp), based on the modulated carrier signal,
- a first CMOS amplifier stage (20 In) that receives the first differential signal (Vinn) and provides a first differential output;
- a second CMOS amplifier stage (20 lp) that receives the second differential signal (Vinp) and provides a second differential output;
- a transformer (K) that includes:
- a primary coil having a first and second terminal, the first terminal being operably coupled to the first differential output, and the second terminal being operably coupled to the second differential output, and - a secondary coil that provides the amplified output signal.
13. The wireless transmitter of claim 12, wherein the splitter (220) is configured to provide the first and second differential signals (Vinn, Vinp) as pulses (41 On, 41 Op), each having a duration that is less than half a cycle period of the modulated carrier signal.
14. The wireless transmitter of claim 13 , wherein the duration of each pulse (41 On, 41 Op) is substantially equal to one-third of the cycle period of the modulated carrier signal.
15. The wireless transmitter of claim 12, wherein each of the first (21 On) and second (210p) CMOS amplifier stages include:
- a CMOS transistor (Mn, Mp) having a gate that receives the differential signal of the amplifier stage (21 On, 210ρ), and - a match network (Con, Lon, CLn; Cop, Lop, CLp) that is operably coupled to an output of the CMOS transistor (Mn, Mp) and provides the differential output, based on a resistance associated with an output load (RL) of the power amplifier (200).
16. The wireless transmitter of claim 15 , wherein the splitter is configured to provide the first and second differential signals as pulses (41 On, 41 Op), each having a duration that is less than half a cycle period of the modulated carrier signal.
17. The wireless transmitter of claim 16, wherein the duration of each pulse (41 On, 41 Op) is substantially equal to one-third of the cycle period of the modulated carrier signal.
18. The wireless transmitter of claim 15 , wherein each of the first (21 On) and second (21 Op) CMOS amplifier stages also include an ancillary transistor (Mn2, Mp2), operably coupled to the output of the CMOS transistor (Mn, Mp), that is configured to dynamically affect an impedance associated with the amplifier stage (21 On, 21 Op), based on a power output level of the power amplifier (200).
19. The wireless transmitter of claim 12, wherein the splitter is further configured to provide ancillary pulses (42 On, 420p) to each of the differential signals, to dynamically affect an impedance associated with the amplifier stage (21 On, 21 Op), based on a power output level of the power amplifier (200).
PCT/IB2002/000177 2001-01-31 2002-01-21 Cmos power amplifier with reduced harmonics and improved efficiency WO2002061940A1 (en)

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EP02737632A EP1358713A1 (en) 2001-01-31 2002-01-21 Cmos power amplifier with reduced harmonics and improved efficiency
JP2002561366A JP2004519126A (en) 2001-01-31 2002-01-21 CMOS power amplifier with reduced harmonics and improved efficiency

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US09/774,775 US6359513B1 (en) 2001-01-31 2001-01-31 CMOS power amplifier with reduced harmonics and improved efficiency

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