WO2002063348A3 - IMPROVED LIGHT EXTRACTION EFFICIENCY OF GaN BASED LEDs - Google Patents

IMPROVED LIGHT EXTRACTION EFFICIENCY OF GaN BASED LEDs Download PDF

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Publication number
WO2002063348A3
WO2002063348A3 PCT/US2001/050632 US0150632W WO02063348A3 WO 2002063348 A3 WO2002063348 A3 WO 2002063348A3 US 0150632 W US0150632 W US 0150632W WO 02063348 A3 WO02063348 A3 WO 02063348A3
Authority
WO
WIPO (PCT)
Prior art keywords
light extraction
extraction efficiency
improved light
gan based
based leds
Prior art date
Application number
PCT/US2001/050632
Other languages
French (fr)
Other versions
WO2002063348A2 (en
WO2002063348A9 (en
Inventor
Ivan Eliashevich
Michael Wang
Original Assignee
Emcore Corp
Ivan Eliashevich
Michael Wang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Emcore Corp, Ivan Eliashevich, Michael Wang filed Critical Emcore Corp
Priority to AU2002253834A priority Critical patent/AU2002253834A1/en
Priority to JP2002563036A priority patent/JP2004519098A/en
Priority to EP01270161A priority patent/EP1334523A2/en
Publication of WO2002063348A2 publication Critical patent/WO2002063348A2/en
Publication of WO2002063348A3 publication Critical patent/WO2002063348A3/en
Publication of WO2002063348A9 publication Critical patent/WO2002063348A9/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

An optoelectronic device has a semiconductor structure (10) on a substrate (12). The shape of the device in plan is that of a quadrilateral having two acute included angles (α1, α2) and two obtuse included angles (α1, α2). One of the electrode-pad units (31) is located distally from the vertices of the quadrilateral. The device may have a transparent electrode (32).
PCT/US2001/050632 2000-10-20 2001-10-19 IMPROVED LIGHT EXTRACTION EFFICIENCY OF GaN BASED LEDs WO2002063348A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2002253834A AU2002253834A1 (en) 2000-10-20 2001-10-19 Improved light extraction efficiency of gan based leds
JP2002563036A JP2004519098A (en) 2000-10-20 2001-10-19 Improvement of light extraction efficiency of gallium nitride based light emitting diodes
EP01270161A EP1334523A2 (en) 2000-10-20 2001-10-19 IMPROVED LIGHT EXTRACTION EFFICIENCY OF GaN BASED LEDs

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24198500P 2000-10-20 2000-10-20
US60/241,985 2000-10-20

Publications (3)

Publication Number Publication Date
WO2002063348A2 WO2002063348A2 (en) 2002-08-15
WO2002063348A3 true WO2002063348A3 (en) 2003-03-20
WO2002063348A9 WO2002063348A9 (en) 2003-07-31

Family

ID=22912998

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/050632 WO2002063348A2 (en) 2000-10-20 2001-10-19 IMPROVED LIGHT EXTRACTION EFFICIENCY OF GaN BASED LEDs

Country Status (4)

Country Link
EP (1) EP1334523A2 (en)
JP (1) JP2004519098A (en)
AU (1) AU2002253834A1 (en)
WO (1) WO2002063348A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4320676B2 (en) * 2004-03-31 2009-08-26 日亜化学工業株式会社 Nitride semiconductor light emitting device
KR100721145B1 (en) * 2006-01-11 2007-05-23 삼성전기주식회사 Light emitting diode device
JP2009054688A (en) * 2007-08-24 2009-03-12 Kyocera Corp Light emitting element

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159385A (en) * 1982-03-17 1983-09-21 Toshiba Corp Two-color light emitting diode
US5006908A (en) * 1989-02-13 1991-04-09 Nippon Telegraph And Telephone Corporation Epitaxial Wurtzite growth structure for semiconductor light-emitting device
US5627109A (en) * 1994-09-16 1997-05-06 Sassa; Michinari Method of manufacturing a semiconductor device that uses a sapphire substrate
JPH10270801A (en) * 1997-03-25 1998-10-09 Sharp Corp Nitride iii-v compound semiconductor light emitting device and its manufacture
US5864171A (en) * 1995-03-30 1999-01-26 Kabushiki Kaisha Toshiba Semiconductor optoelectric device and method of manufacturing the same
US5929465A (en) * 1997-08-25 1999-07-27 Highligh Optoelectronics, Inc. Non-quadrilateral light emitting devices of compound semiconductor
JPH11340576A (en) * 1998-05-28 1999-12-10 Sumitomo Electric Ind Ltd Gallium nitride based semiconductor device
US6221684B1 (en) * 1996-09-10 2001-04-24 Kabushiki Kaisha Toshiba GaN based optoelectronic device and method for manufacturing the same
US6281524B1 (en) * 1997-02-21 2001-08-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
US20010030328A1 (en) * 1999-12-06 2001-10-18 Masahiro Ishida Nitride semiconductor device
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159385A (en) * 1982-03-17 1983-09-21 Toshiba Corp Two-color light emitting diode
US5006908A (en) * 1989-02-13 1991-04-09 Nippon Telegraph And Telephone Corporation Epitaxial Wurtzite growth structure for semiconductor light-emitting device
US5627109A (en) * 1994-09-16 1997-05-06 Sassa; Michinari Method of manufacturing a semiconductor device that uses a sapphire substrate
US5864171A (en) * 1995-03-30 1999-01-26 Kabushiki Kaisha Toshiba Semiconductor optoelectric device and method of manufacturing the same
US6221684B1 (en) * 1996-09-10 2001-04-24 Kabushiki Kaisha Toshiba GaN based optoelectronic device and method for manufacturing the same
US6281524B1 (en) * 1997-02-21 2001-08-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
JPH10270801A (en) * 1997-03-25 1998-10-09 Sharp Corp Nitride iii-v compound semiconductor light emitting device and its manufacture
US5929465A (en) * 1997-08-25 1999-07-27 Highligh Optoelectronics, Inc. Non-quadrilateral light emitting devices of compound semiconductor
JPH11340576A (en) * 1998-05-28 1999-12-10 Sumitomo Electric Ind Ltd Gallium nitride based semiconductor device
US20020063258A1 (en) * 1998-05-28 2002-05-30 Kensaku Motoki Gallium nitride-type semiconductor device
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US20010030328A1 (en) * 1999-12-06 2001-10-18 Masahiro Ishida Nitride semiconductor device

Also Published As

Publication number Publication date
EP1334523A2 (en) 2003-08-13
WO2002063348A2 (en) 2002-08-15
WO2002063348A9 (en) 2003-07-31
AU2002253834A1 (en) 2002-08-19
JP2004519098A (en) 2004-06-24

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