WO2002069390A9 - Grating test patterns and methods for overlay metrology - Google Patents

Grating test patterns and methods for overlay metrology

Info

Publication number
WO2002069390A9
WO2002069390A9 PCT/US2002/005648 US0205648W WO02069390A9 WO 2002069390 A9 WO2002069390 A9 WO 2002069390A9 US 0205648 W US0205648 W US 0205648W WO 02069390 A9 WO02069390 A9 WO 02069390A9
Authority
WO
WIPO (PCT)
Prior art keywords
line
mask
lines
clear
dark
Prior art date
Application number
PCT/US2002/005648
Other languages
French (fr)
Other versions
WO2002069390A2 (en
WO2002069390A3 (en
Inventor
Xinhui Niu
Nickhil Jakatdar
Original Assignee
Timbre Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Timbre Tech Inc filed Critical Timbre Tech Inc
Priority to EP02725005A priority Critical patent/EP1379922A2/en
Priority to JP2002568415A priority patent/JP2004519716A/en
Publication of WO2002069390A2 publication Critical patent/WO2002069390A2/en
Publication of WO2002069390A9 publication Critical patent/WO2002069390A9/en
Publication of WO2002069390A3 publication Critical patent/WO2002069390A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G02B27/4255—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application for alignment or positioning purposes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
    • G02B5/1819—Plural gratings positioned on the same surface, e.g. array of gratings

Definitions

  • the present invention relates generally to precision optical measurement of the
  • the main contributors to overlay error are the stage, alignment system and
  • overlay are the alignment target detection capability, the stage positioning accuracy and
  • overlaying process layers are overlaying process layers. Technologies utilized for overlay measurement include electrical test, scanning
  • phase-based analysis by adding an interferometer to the microscope, enables phase-based analysis
  • boxes can be replaced with combinations of bars and frames, which add
  • overlay target is not known. Some fabs may periodically look at cross sections or make
  • Alignment target detection became a show-stopper for many exposure tools
  • the invention uses a set of diffraction gratings as the test patterns, and thin film
  • metrology equipment such as spectroscopic elhpsometer and spectroscopic reflectometer.
  • second layer mask is placed in the center of a clear line in a first layer mask.
  • the present invention uses a spectroscopic elhpsometer or
  • the present invention provides overlay information of a test
  • the present invention provides an average overlay information over at least
  • FIG. 1 is a pictorial diagram illustrating quad orientations of overlay patterned
  • FIGS. 2A-2E are process diagrams illustrating a line-on-line overlay patterned
  • FIGS. 3A-3D are process diagrams of various examples of adding one or more
  • FIGS. 4A-4E are process diagrams illustrating a line-in-line overlay patterned
  • FIGS. 5A-5D are process diagrams of various examples of adding one or more
  • FIG. 6 is a process diagram illustrating a first example of a line-in-line structure in
  • FIGS. 7A-7B are graphical diagrams illustrating the overly measurement of the
  • FIG. 8 is a process diagram illustrating a second example of a line-in-line
  • FIGS. 9A-9B are graphical diagrams illustrating the overlay measurement of the
  • FIG. 10 is a process diagram illustrating a first example of a line-on-line structure in accordance with the present invention.
  • FIGS. 11A-11B are graphical diagrams illustrating the overlay measurement of
  • FIG. 12 is a process diagram illustrating a second example of a line-on-line
  • FIGS. 13A-13B are graphical diagrams illustrating the overly measurement of the
  • FIG. 1 is a pictorial diagram illustrating the quad orientation of overlay patterned
  • gratings 10 with a grating A 11, a grating B 12, a grating C13, and a grating 14.
  • orientation of the patterned grating lines in the present invention is placed at 0, 90, -45,
  • the grating A 11 is orthogonal with the grating B 12, and the grating C
  • the overlay test pattern lines extend horizontally, with the
  • test pattern line extends vertically, with the desirable offset that is detected in an arrow direction 16.
  • overlay test pattern lines extends diagonally with a
  • the overlay test pattern lines extend diagonally with a negative slope
  • an orthogonal pair can be
  • a mask is a pattern tool which contains patterns that can be transferred to an
  • a mask is said to be a dark-field (or negative) tool, if the
  • FIGS. 2A-2E are process diagrams illustrating a line-on-line overlay test structure.
  • FIG. 2A shows a first layer mask 20, with
  • FIG. 2B shows that
  • FIG. 2C shows that the material under
  • photoresist is patterned after the etch process 22 (note that photoresist is removed).
  • 2D shows the second layer mask 23, with clear lines 23a, 23c, 23e, and 23g, and dark
  • FIG. 2E shows photoresist is patterned on the previous patterned
  • a d[ 25 distance measures a gap from the left edge of the first dark line in the
  • FIGS. 3 A-3D are process diagrams of various examples
  • FIG. 3 A shows
  • a material layer 31a is
  • first etch process 30a and the second lithography process 30b are identical to first etch process 30a and the second lithography process 30b.
  • FIGS. 4A-4E are process diagrams illustrating a line-in-line overlay test structure.
  • FIG. 4A shows a first layer mask 40
  • FIG. 4C shows that the
  • photoresist material under photoresist is patterned after the etch process 42 (note that photoresist is
  • FIG. 2D shows the second layer mask 43, with dark lines 43a, 43c, 43e, and
  • FIG. 4E shows photoresist is patterned on the previous patterned layer 44.
  • 45 distance measures a gap from the left edge of the
  • Figure 5 A-5D are process diagrams of various examples
  • FIG. 5 A shows a
  • a material layer 51a is
  • first etch process 50a and the second lithography process 50b are identical to first etch process 50a and the second lithography process 50b.
  • the present invention has two test patterns, which are called
  • a complete 2- and 3 -dimensional periodic profiles can be measured using phase
  • optical techniques such as spectroscopic ellipsometry
  • FIG. 6 is a process diagram illustrating a first example of a line-in-line
  • a resist 61 is placed in between a PolySi 62 and a PolySi 63.
  • the pitch is
  • the resist 61 would be positioned in the center between the PolySi 62
  • 7B are graphical diagrams illustrating the overly measurement of the line-in-line structure
  • FIG. 8 is a process diagram illustrating a second example of a line-in-line
  • dielectric layers 81 and 82 are deposited in between the PolySi 62, and the PolySi 63, followed by CMP (chemical
  • invention can still detect the overlay since it is not dependent on detection of edges.
  • FIGS. 9A-9B are graphical diagrams illustrating the overly measurement of the line-in ⁇
  • FIG. 10 is a process diagram illustrating a first example of a line-on-line structure
  • FIGS. 11 A-l IB are graphical diagrams illustrating
  • FIG. 12 is a process diagram illustrating a second example of a line-on-line
  • FIGS. 13A-13B are graphical diagrams
  • optical metrology equipment and multiple wavelength fixed incident angle

Abstract

A metrology for determining bias or overlay error in lithographic processes. This metrology includes a set of diffraction test patterns, optical inspection techniques by using spectroscopic ellipsometer or reflectometer, a method of test pattern profile extraction. The invention uses a set of diffraction gratings (10) as the test patterns, and thin film metrology equipment, such as spectroscopic ellipsometer or spectroscopic reflectometer. The profiles of the test patterns in the two successive layers are analyzed. Overlay information are obtained after processing the profile data. In a first aspect of the invention, a line-on-line overlay grating test patterns structure is disclosed in which a second layer mask is placed in the center of a clear line in a first layer mask. In a second aspect of the invention, a line-on-line overlay grating test patterns structure is disclosed in which a second layer mask is placed in the center of a dark line in the first mask.

Description

Grating Test Patterns and Methods for Overlay Metrology
Field of the Invention
The present invention relates generally to precision optical measurement of the
two process layers on a semiconductor wafer, and more particularly to a set of diffraction
grating test patterns that are used in combination with rigorous diffraction grating
analysis.
Description of Related Art
Lithography continues to be the key enabler and driver for semiconductor
industry. Metrology equipment and method for critical dimension (CD) and overlay
control are the key elements of the lithography infrastructure. Overlay and CD control
over large field sizes will continue to be a major concern for sub-lOOnm lithography.
Overlay requirements are among the most difficult technical challenges in lithography.
The main contributors to overlay error are the stage, alignment system and
distortion signature. Errors can be broken down into stage motion or wafer alignment
errors such as placement and rotation inaccuracies and field errors like errors on the
reticle and in camera magnification. These errors are correctable. Pincushion or barrel
distortions, third-order field errors, are not correctable. The overlay errors must be
routinely characterized for a given exposure tool. Three fundamental components of
overlay are the alignment target detection capability, the stage positioning accuracy and
precision, and the difference in lens distortion between two tools used to expose
overlaying process layers. Technologies utilized for overlay measurement include electrical test, scanning
electron microscope (SEM), and optical microscope. Coherence probe microscopy
(CPM), by adding an interferometer to the microscope, enables phase-based
measurements that can pick up subtle differences in index of refraction and topography. Optical microscope technology has been the dominant measurement technique.
Overlay targets often are variations of box-in-a-box. The center of each box is
calculated independently, and a difference between them is determined. Some metrology
tools measure overlay error as a combination of linewidth measurements. To increase
contrast, the boxes can be replaced with combinations of bars and frames, which add
structure at the target's perimeter by providing two edges instead of one. A shortcoming
is that there is no practical standard for overlay. Therefore, a true value for any particular
overlay target is not known. Some fabs may periodically look at cross sections or make
comparisons to electrical parameters, but this is time consuming and relegated to
characterization environment, rather than in production.
Alignment target detection became a show-stopper for many exposure tools with
the proliferation of CMP levels, where very planarized metal layers present considerable
challenges to finding and measuring a target's position.
One conventional solution uses a box-in-box test pattern. The details of this
conventional solution is described in a section, for example, entitled "Semiconductor
Pattern Overlay" in the Handbook of Critical Dimensions Metrology and Process Control,
SPIE, vol. CR52, 1994, pp. 160-188. Several shortcomings of conventional solutions include, asymmetry of patterned
line profile, aberrations in the illumination and imaging optics, individual test pattern
image sampling, and for polished layers, the signal-to-noise (S/N) ratio in prior arts can
be poor and affected by contrast variations in film thickness.
Accordingly, it is desirable to have a method and system for grating overlay
patterns that are fast and flexible.
SUMMARY OF THE INVENTION
The invention uses a set of diffraction gratings as the test patterns, and thin film
metrology equipment, such as spectroscopic elhpsometer and spectroscopic reflectometer.
The profiles of the test patterns in the two successive layers are analyzed. Overlay
information are obtained after processing the profile data. In a first aspect of the
invention, a line-on-line overlay grating test patterns structure is disclosed in which a
second layer mask is placed in the center of a clear line in a first layer mask. In a second
aspect of the invention, a line-in-line overlay grating test patterns structure is disclosed in
which a second layer mask is placed in the center of a dark line in the first mask.
Advantageously, the present invention uses a spectroscopic elhpsometer or
spectroscopic reflectometer without the necessity in requiring a highly precise focusing
optical system. Moreover, the present invention provides overlay information of a test
pattern which contains at least 30 repetitive structures. For example, based on one
measurement, the present invention provides an average overlay information over at least
30 samples. Furthermore, the present invention requires less precise wafer stage, so the
metrology equipment is considerably cheap than those for prior arts. Other structures and methods are disclosed in the detailed description below. This
summary does not purport to define the invention. The invention is defined by the claims.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a pictorial diagram illustrating quad orientations of overlay patterned
grating lines in accordance with the present invention.
FIGS. 2A-2E are process diagrams illustrating a line-on-line overlay patterned
grating in accordance with the present invention.
FIGS. 3A-3D are process diagrams of various examples of adding one or more
layers in a line-on-line overlay patterned grating in accordance with the present invention.
FIGS. 4A-4E are process diagrams illustrating a line-in-line overlay patterned
grating in accordance with the present invention.
FIGS. 5A-5D are process diagrams of various examples of adding one or more
layers in a ling-on-line overlay patterned grating in accordance with the present invention.
FIG. 6 is a process diagram illustrating a first example of a line-in-line structure in
accordance with the present invention.
FIGS. 7A-7B are graphical diagrams illustrating the overly measurement of the
line-in-line structure in FIG. 6 using an ellipsometry in accordance with the present
invention.
FIG. 8 is a process diagram illustrating a second example of a line-in-line
structure in accordance with the present invention. FIGS. 9A-9B are graphical diagrams illustrating the overlay measurement of the
line-in-line structure in FIG. 8 using an ellipsometry in accordance with the present
invention.
FIG. 10 is a process diagram illustrating a first example of a line-on-line structure in accordance with the present invention.
FIGS. 11A-11B are graphical diagrams illustrating the overlay measurement of
the line-on-line structure in FIG. 10 using an ellipsometry in accordance with the present
invention.
FIG. 12 is a process diagram illustrating a second example of a line-on-line
structure in accordance with the present invention.
FIGS. 13A-13B are graphical diagrams illustrating the overly measurement of the
line-on-line structure in FIG. 12 using an ellipsometry in accordance with the present
invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT(S)
FIG. 1 is a pictorial diagram illustrating the quad orientation of overlay patterned
gratings 10, with a grating A 11, a grating B 12, a grating C13, and a grating 14. The
orientation of the patterned grating lines in the present invention is placed at 0, 90, -45,
and 45 degrees. The grating A 11 is orthogonal with the grating B 12, and the grating C
13 is orthogonal with the grating D 14.
In the grating A 11, the overlay test pattern lines extend horizontally, with the
desirable offset that is detected in an arrow direction 15. In the grating B 12, the overlay
test pattern line extends vertically, with the desirable offset that is detected in an arrow direction 16. In the grating C 13, the overlay test pattern lines extends diagonally with a
positive slope, with the desirable offset that is detected in an arrow direction 17. In the
grating D 14, the overlay test pattern lines extend diagonally with a negative slope, with
the desirable offset that is detected in an arrow direction 18. An orthogonal pair can
provide overlay information in any orientation. Furthermore, an orthogonal pair can
avoid loading/unloading of a wafer for different overlay orientation requirements.
A mask is a pattern tool which contains patterns that can be transferred to an
entire wafer in one exposure. A mask is said to be a dark-field (or negative) tool, if the
field (or background) areas are opaque, and to be a clear-field (or positive) tool is the
field is transparent.
FIGS. 2A-2E are process diagrams illustrating a line-on-line overlay test structure.
Here we use positive masks for the illustration. FIG. 2A shows a first layer mask 20, with
clear lines 20a, 20c, 20e, and 20g, and dark lines 20b, 20d, and 20f. The dark lines 20b,
20d, and 20f are wider than the clear lines 20a, 20c, 20e, and 20g. FIG. 2B shows that
the photoresist is patterned after the lithography development 21. Photoresist 21a, 21b,
and 21c are patterned over the first layer mask 20. FIG. 2C shows that the material under
photoresist is patterned after the etch process 22 (note that photoresist is removed). FIG.
2D shows the second layer mask 23, with clear lines 23a, 23c, 23e, and 23g, and dark
lines 23b, 23d, and 23f. The clear lines 23a, 23c, 23e, and 23g are wider than the dark
lines 23b, 23d, and 23f. FIG. 2E shows photoresist is patterned on the previous patterned
layer 24. A d[ 25 distance measures a gap from the left edge of the first dark line in the
second mask to the left edge of the first dark line in the second mask; and a d226 distance measures a gap from the right edge of the first dark line in the second mask to the right
edge of the first dark line in the first mask.
There can be some material layers between the second lithography process and the
first etch process. For example, FIGS. 3 A-3D are process diagrams of various examples
of adding one or more layers in a line-on-line overlay patterned grating. FIG. 3 A shows
a general structural diagram 30 with a first etch process 30a and the second lithography
process 30b. In a first type of structural diagram 31 in FIG. 3B, a material layer 31a is
inserted between the first etch process 30a and the second lithography process 30b. In a
second type of structural diagram 32 in FIG. 3C, a material layer 32a is placed between
the first etch process 30a and the second lithography process 30b. In a third type of
structural diagram 33 in FIG. 3D, two material layers 33a and 33 b are placed between the
first etch process 30a and the second lithography process 30b.
FIGS. 4A-4E are process diagrams illustrating a line-in-line overlay test structure.
Here we use positive masks for the illustration. FIG. 4A shows a first layer mask 40,
with clear lines 40a, 40c, 40e, and 40g, and dark lines 40b, 40d, and 40f. The dark lines
40b, 40d, and 40f are narrower than the clear lines 40a, 40c, 40e, and 40g. FIG. 4B
shows that the photoresist is patterned after the lithography development 41. Photoresist
41a, 41b, and 41c are patterned over the first layer mask 40. FIG. 4C shows that the
material under photoresist is patterned after the etch process 42 (note that photoresist is
removed). FIG. 2D shows the second layer mask 43, with dark lines 43a, 43c, 43e, and
43g, and clear lines 43b, 43d, and 43f. The dark lines 43a, 43c, 43e, and 43g are wider
than the clear lines 43b, 43d, and 43f. FIG. 4E shows photoresist is patterned on the previous patterned layer 44. A X| 45 distance measures a gap from the left edge of the
first clear line in the second mask to the left edge of the first clear line in the first mask,
and a X2 46 distance measuring a gap from the right edge of the first clear line in the
second mask to the right edge of the first clear line in the first mask.
There can be some material layers between the second lithography process and the
first etch process. For example, Figure 5 A-5D are process diagrams of various examples
of adding one or more layers in a line-in-line overlay patterned grating. FIG. 5 A shows a
general structural diagram 50 with a first etch process 50a and the second lithography
process 50b. In a first type of structural diagram 51 in FIG. 5B, a material layer 51a is
inserted between the first etch process 50a and the second lithography process 50b. In a
second type of structural diagram 52 in FIG. 5C, a material layer 52a is placed between
the first etch process 50a and the second lithography process 50b. In a third type of
structural diagram 53 in FIG. 5D, two material layers 53a and 53b are placed between the
first etch process 50a and the second lithography process 50b.
The advantages provided by the orientation of patterned grating lines 10 are as
follows. First, for spectroscopic reflectometry, there is not need to change the wafer.
Overlay results obtained at different orientation angle can help to reduce random error.
Secondly, for spectroscopic ellipsometry, the information from -45 and +45 degree
provide complete minimum requirement for a overlay metrology purpose, with out the
requirement to reload wafer. And the information from 0 or 90 degree provides the most
accurate overlay data. At each orientation, the present invention has two test patterns, which are called
"line-in-line" and "line-on-line" test patterns. The theoretical studies are shown in
following sections.
A complete 2- and 3 -dimensional periodic profiles can be measured using phase
and/or intensity information from optical techniques such as spectroscopic ellipsometry
and reflectometry, as described in a co-pending patent application entitled "Optical
Profilometry for 2-D and 3-D Sub-Micron Periodic Features With Three or More
Material in the Periodic Layers", assigned to the same assignee, and accorded an
application number of , which is incorporated herein by
reference in its entirety.
Simulations are performed to support the concepts described above. In all of the
examples, it is shown that a lOnm overlay error can be detected with the presented
invention. FIG. 6 is a process diagram illustrating a first example of a line-in-line
structure 60. A resist 61 is placed in between a PolySi 62 and a PolySi 63. The pitch is
600 nm from the left edge of the PolySi 62 to the left edge of the PolySi 63. If Xι = 150,
and 2 ~ 150, then the resist 61 would be positioned in the center between the PolySi 62
and the PolySi 63. If the resist 61 moves 5 nm to the left, then x\ = 145, and x2 = 155.
Or, if the resist 61 moves 5 nm to the right, then, then [ = 155, and x2= 145. FIGS. 7A-
7B are graphical diagrams illustrating the overly measurement of the line-in-line structure
in FIG. 6 using an ellipsometry.
FIG. 8 is a process diagram illustrating a second example of a line-in-line
structure 80. In this example, before placing the resist 61, dielectric layers 81 and 82 are deposited in between the PolySi 62, and the PolySi 63, followed by CMP (chemical
mechanical polishing) planarization. Although edges for the PolySi 62 and the PolySi 63,
are not longer detectable due to the fill-in of dielectric layers 81 and 82, the present
invention can still detect the overlay since it is not dependent on detection of edges.
5 FIGS. 9A-9B are graphical diagrams illustrating the overly measurement of the line-in¬
line structure in FIG. 8 using an ellipsometry.
FIG. 10 is a process diagram illustrating a first example of a line-on-line structure
100., with distance dj 101 and d2 102. FIGS. 11 A-l IB are graphical diagrams illustrating
the overly measurement of the line-on-line structure in FIG. 10 using an ellipsometry in
l o accordance with the present invention.
FIG. 12 is a process diagram illustrating a second example of a line-on-line
structure 120, with dielectric layers 121 and 122. FIGS. 13A-13B are graphical diagrams
illustrating the overly measurement of the line-on-line structure in FIG. 12 using an
ellipsometry in accordance with the present invention.
15 The line-in-line and line-on-line overlay measurements can be
applied to single wavelength variable incident angle optical metrology
equipment. Additionally, the line-in-line and line-on-line overlay measurements can be
applied to any combination of single wavelength variable incident angle
optical metrology equipment and multiple wavelength fixed incident angle
20 optical metrology equipment. Furthermore, the line-in-line and line-on-line overlay
measurements can be applied to multiple wavelength multiple incident angle optical metrology equipment. The above embodiments are only illustrative of the principles of this invention
and are not intended to limit the invention to the particular embodiments described.
Accordingly, various modifications, adaptations, and combinations of various features of
the described embodiments can be practiced without departing from the scope of the
invention as set forth in the appended claims.

Claims

CLAIMSWE CLAIM:
1. A line-on-line structure, comprising:
a first mask having a plurality of dark lines and a plurality of clear lines,
each dark line being placed adjacent to clear lines; and
a second mask having a plurality of dark lines and a plurality of clear lines,
each dark line in the second mask being placed in the center of a dark line in the first
mask.
2. The line-on-line structure of Claim 1, when using a positive resist, the
dark lines in the first mask being wider than the clear lines in the first mask.
3. The line-on-line structure of Claim 1, when using a negative resist, the
dark lines in the first mask being narrower than the clear lines in the first mask.
4. The line-on-line structure of Claim 1, wherein the plurality of clear lines in
the first mask are identical or substantially identical to one another, and wherein the
plurality of the dark lines in the first mask are identical or substantially identical to one
another, thereby the combination of clear lines and dark. lines in the first mask producing
a repetitive pattern on the first mask.
5. The line-on-line structure of Claim 1, wherein the plurality of dark lines in
the first mask being wider than the plurality dark lines in the second mask.
6. The line-on-line structure of Claim 1, wherein the plurality of clear lines in
the first mask being narrower than the plurality of clear lines in the second mask.
7. The line-on-line structure of Claim 1, wherein a first dark line in the
plurality of dark lines in the second mask having a left edge and a right edge, and wherein
a first dark line in the plurality of dark lines in the first mask having a left edge and a right
edge.
8. The line-in-line structure of Claim 7, further comprising
a d\ distance measuring a gap from the left edge of the first dark line in the
second mask to the left edge of the first dark line in the second mask; and
a d2 distance measuring a gap from the right edge of the first dark line in
the second mask to the right edge of the first dark line in the first mask.
9. The line-on-line structure of Claim 8, wherein the first dark line in the
second mask is in the center of the first dark line in the first mask if d\ - d2.
10. The line-on-line structure of Claim 8, wherein the first dark line in the
second mask shifts to the right of the first dark line in the first mask if di minus d
produces a positive number.
11. The line-on-line structure of Claim 8, wherein the first dark line in the
second mask is shifts to the left of the first dark line in the first mask if di minus d2
produces a negative number.
12. A line-in-line structure, comprising: a first mask having a plurality of dark lines and a plurality of clear lines,
each dark line being placed adjacent to clear lines; and
a second mask having a plurality of dark lines and a plurality of clear lines,
each clear line in the second mask being placed in the center of a clear line in the first
mask.
13. The line-in-line structure of Claim 12, when using a positive resist, the
plurality of clear lines in the first mask being wider than the plurality of dark lines in the
first mask.
14. The line-in-line structure of Claim 12, when using a negative resist, the
plurality of clear lines in the first mask being narrower than the plurality of clear lines in
the first mask.
15. The line-in-line structure of Claim 12, wherein the plurality of clear lines
in the first mask are identical or substantially identical to one another, and wherein the
dark lines in the first mask are identical or substantially identical to one another, thereby
the combination of clear lines and dark lines in the first mask producing a repetitive
pattern on the first mask.
16. The line-in-line structure of Claim 12, wherein the plurality of dark lines
in the first mask being narrower than the plurality dark lines of the second masks.
17. The line-in-line structure of Claim 12, wherein the plurality of clear lines
in the first mask being wider than the plurality of clear lines in the second masks.
18. The line-in-line structure of Claim 12, wherein a first clear line in the
plurality of clear lines in the second mask having a left edge and a right edge, and
wherein a first clear line in the plurality of clear lines in the first mask having a left edge
and a right edge.
19. The line-in-line structure of Claim 18, further comprising
a Xj distance measuring a gap from the left edge of the first clear line in
the second mask to the left edge of the first clear line in the first mask; and
a X2 distance measuring a gap from the right edge of the first clear line in
the second mask to the right edge of the first clear line in the first mask.
20. The line-in-line structure of Claim 18, wherein the first clear line in the
second mask is in the center of the first clear line in the first mask if Xj = X2.
21. The line-in-line structure of Claim 18, wherein the first clear line in the
second mask is shifts to the right of the first clear line in the first mask if Xi minus X2
produces a positive number.
22. The line-in-line structure of Claim 18, wherein the first clear line in the
second mask is shifts to the right of the first clear line in the first mask if Xi minus X2
produces a positive number.
23. A method for multi-orientation of orthogonal pairs, comprising: placing a grating; and
shining a light on the grating wherein the light is not perpendicular to the
orientation of the grating.
24. The method for multi-orientation of orthogonal pairs of Claim 23, wherein
the orientation of the grating forms a positive slope.
25. The method for multi-orientation of orthogonal pairs of Claim 23, wherein
the orientation of the grating forms a negative slope.
PCT/US2002/005648 2001-02-27 2002-02-25 Grating test patterns and methods for overlay metrology WO2002069390A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP02725005A EP1379922A2 (en) 2001-02-27 2002-02-25 Grating test patterns and methods for overlay metrology
JP2002568415A JP2004519716A (en) 2001-02-27 2002-02-25 Grid test pattern and overlay measurement method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/794,686 US6699624B2 (en) 2001-02-27 2001-02-27 Grating test patterns and methods for overlay metrology
US09/794,686 2001-02-27

Publications (3)

Publication Number Publication Date
WO2002069390A2 WO2002069390A2 (en) 2002-09-06
WO2002069390A9 true WO2002069390A9 (en) 2003-01-30
WO2002069390A3 WO2002069390A3 (en) 2003-11-13

Family

ID=25163350

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/005648 WO2002069390A2 (en) 2001-02-27 2002-02-25 Grating test patterns and methods for overlay metrology

Country Status (5)

Country Link
US (2) US6699624B2 (en)
EP (1) EP1379922A2 (en)
JP (1) JP2004519716A (en)
TW (1) TW556297B (en)
WO (1) WO2002069390A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE45245E1 (en) 2000-08-30 2014-11-18 Kla-Tencor Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US9103662B2 (en) 2001-04-10 2015-08-11 Kla-Tencor Corporation Periodic patterns and technique to control misalignment between two layers

Families Citing this family (108)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6689519B2 (en) * 2000-05-04 2004-02-10 Kla-Tencor Technologies Corp. Methods and systems for lithography process control
US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
IL138552A (en) 2000-09-19 2006-08-01 Nova Measuring Instr Ltd Lateral shift measurement using an optical technique
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US7515279B2 (en) * 2001-03-02 2009-04-07 Nanometrics Incorporated Line profile asymmetry measurement
KR100536646B1 (en) 2001-03-02 2005-12-14 액센트 옵티칼 테크놀로지스 인코포레이티드 Line profile asymmetry measurement using scatterometry
JP3647378B2 (en) * 2001-03-02 2005-05-11 キヤノン株式会社 Shape measuring apparatus and measuring method using multiprobe
US20020192577A1 (en) 2001-06-15 2002-12-19 Bernard Fay Automated overlay metrology system
US7061615B1 (en) 2001-09-20 2006-06-13 Nanometrics Incorporated Spectroscopically measured overlay target
US7046361B1 (en) 2002-04-04 2006-05-16 Nanometrics Incorporated Positioning two elements using an alignment target with a designed offset
US6949462B1 (en) 2002-04-04 2005-09-27 Nanometrics Incorporated Measuring an alignment target with multiple polarization states
US6982793B1 (en) 2002-04-04 2006-01-03 Nanometrics Incorporated Method and apparatus for using an alignment target with designed in offset
US6958819B1 (en) 2002-04-04 2005-10-25 Nanometrics Incorporated Encoder with an alignment target
US6804005B2 (en) * 2002-05-02 2004-10-12 Timbre Technologies, Inc. Overlay measurements using zero-order cross polarization measurements
DE10224164B4 (en) * 2002-05-31 2007-05-10 Advanced Micro Devices, Inc., Sunnyvale A two-dimensional structure for determining a superposition accuracy by means of scattering measurement
US7170604B2 (en) * 2002-07-03 2007-01-30 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction
US7046376B2 (en) * 2002-07-05 2006-05-16 Therma-Wave, Inc. Overlay targets with isolated, critical-dimension features and apparatus to measure overlay
US20040066517A1 (en) * 2002-09-05 2004-04-08 Hsu-Ting Huang Interferometry-based method and apparatus for overlay metrology
EP1400855A3 (en) * 2002-09-20 2009-04-08 ASML Netherlands B.V. Device inspection
US6992764B1 (en) 2002-09-30 2006-01-31 Nanometrics Incorporated Measuring an alignment target with a single polarization state
US7440105B2 (en) * 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
JP4746987B2 (en) * 2002-12-05 2011-08-10 ケーエルエー−テンカー コーポレイション Apparatus and method for detecting overlay error using scatterometry
US6970255B1 (en) 2003-04-23 2005-11-29 Nanometrics Incorporated Encoder measurement based on layer thickness
US7230704B2 (en) 2003-06-06 2007-06-12 Tokyo Electron Limited Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay
US7230703B2 (en) 2003-07-17 2007-06-12 Tokyo Electron Limited Apparatus and method for measuring overlay by diffraction gratings
US7508976B1 (en) 2003-12-29 2009-03-24 Nanometric Incorporated Local process variation correction for overlay measurement
US6948149B2 (en) * 2004-02-19 2005-09-20 Infineon Technologies, Ag Method of determining the overlay accuracy of multiple patterns formed on a semiconductor wafer
US20080144036A1 (en) * 2006-12-19 2008-06-19 Asml Netherlands B.V. Method of measurement, an inspection apparatus and a lithographic apparatus
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US20060109463A1 (en) * 2004-11-22 2006-05-25 Asml Netherlands B.V. Latent overlay metrology
US7289214B1 (en) 2004-11-23 2007-10-30 N&K Technology, Inc. System and method for measuring overlay alignment using diffraction gratings
US7453577B2 (en) * 2004-12-14 2008-11-18 Asml Netherlands B.V. Apparatus and method for inspecting a patterned part of a sample
US7443486B2 (en) * 2005-02-25 2008-10-28 Asml Netherlands B.V. Method for predicting a critical dimension of a feature imaged by a lithographic apparatus
US7315384B2 (en) * 2005-05-10 2008-01-01 Asml Netherlands B.V. Inspection apparatus and method of inspection
US20070002336A1 (en) * 2005-06-30 2007-01-04 Asml Netherlands B.V. Metrology apparatus, lithographic apparatus, process apparatus, metrology method and device manufacturing method
US7532307B2 (en) * 2005-06-30 2009-05-12 Asml Netherlands B.V. Focus determination method, device manufacturing method, and mask
US7687925B2 (en) * 2005-09-07 2010-03-30 Infineon Technologies Ag Alignment marks for polarized light lithography and method for use thereof
US20070093044A1 (en) * 2005-10-25 2007-04-26 Asml Netherlands B.V. Method of depositing a metal layer onto a substrate and a method for measuring in three dimensions the topographical features of a substrate
US20070153274A1 (en) * 2005-12-30 2007-07-05 Asml Netherlands B.V. Optical metrology system and metrology mark characterization device
US7480050B2 (en) * 2006-02-09 2009-01-20 Asml Netherlands B.V. Lithographic system, sensor, and method of measuring properties of a substrate
US7486408B2 (en) * 2006-03-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method with reduced scribe lane usage for substrate measurement
US7821650B2 (en) * 2006-03-21 2010-10-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method with reduced scribe lane usage for substrate measurement
US7532305B2 (en) * 2006-03-28 2009-05-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using overlay measurement
US7391513B2 (en) * 2006-03-29 2008-06-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using overlay measurement quality indication
US7247843B1 (en) * 2006-05-11 2007-07-24 Massachusetts Institute Of Technology Long-range gap detection with interferometric sensitivity using spatial phase of interference patterns
US7502103B2 (en) * 2006-05-31 2009-03-10 Asml Netherlands B.V. Metrology tool, system comprising a lithographic apparatus and a metrology tool, and a method for determining a parameter of a substrate
US7791724B2 (en) * 2006-06-13 2010-09-07 Asml Netherlands B.V. Characterization of transmission losses in an optical system
US7898662B2 (en) * 2006-06-20 2011-03-01 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7692792B2 (en) * 2006-06-22 2010-04-06 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7564554B2 (en) * 2006-06-30 2009-07-21 Intel Corporation Wafer-based optical pattern recognition targets using regions of gratings
US7999940B2 (en) * 2006-06-30 2011-08-16 Asml Netherlands B.V. Apparatus for angular-resolved spectroscopic lithography characterization
US7659988B2 (en) * 2006-06-30 2010-02-09 Asml Netherlands B.V. Apparatus for angular-resolved spectroscopic lithography characterization and device manufacturing method
US7404725B2 (en) * 2006-07-03 2008-07-29 Hall David R Wiper for tool string direct electrical connection
US7916284B2 (en) 2006-07-18 2011-03-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7808613B2 (en) * 2006-08-03 2010-10-05 Asml Netherlands B.V. Individual wafer history storage for overlay corrections
US20080036984A1 (en) * 2006-08-08 2008-02-14 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7643666B2 (en) * 2006-08-08 2010-01-05 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7589832B2 (en) * 2006-08-10 2009-09-15 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device method
US7564555B2 (en) * 2006-08-15 2009-07-21 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7532331B2 (en) 2006-09-14 2009-05-12 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7969577B2 (en) * 2006-09-14 2011-06-28 Asml Netherlands B.V. Inspection apparatus, an apparatus for projecting an image and a method of measuring a property of a substrate
US7573584B2 (en) * 2006-09-25 2009-08-11 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
CN1928721B (en) * 2006-09-27 2012-05-30 上海微电子装备有限公司 Moving phase grating mark and method for utilizing same in detecting image forming quality of photoetching machine
US8233155B2 (en) * 2006-10-13 2012-07-31 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US8294907B2 (en) 2006-10-13 2012-10-23 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7522295B2 (en) * 2006-11-07 2009-04-21 Tokyo Electron Limited Consecutive measurement of structures formed on a semiconductor wafer using a polarized reflectometer
US7630087B2 (en) * 2006-11-22 2009-12-08 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7710572B2 (en) * 2006-11-30 2010-05-04 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7557934B2 (en) * 2006-12-07 2009-07-07 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US20080135774A1 (en) * 2006-12-08 2008-06-12 Asml Netherlands B.V. Scatterometer, a lithographic apparatus and a focus analysis method
US20080148875A1 (en) * 2006-12-20 2008-06-26 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7916927B2 (en) * 2007-01-16 2011-03-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7619737B2 (en) * 2007-01-22 2009-11-17 Asml Netherlands B.V Method of measurement, an inspection apparatus and a lithographic apparatus
US7852459B2 (en) 2007-02-02 2010-12-14 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7701577B2 (en) * 2007-02-21 2010-04-20 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7724370B2 (en) * 2007-03-01 2010-05-25 Asml Netherlands B.V. Method of inspection, a method of manufacturing, an inspection apparatus, a substrate, a mask, a lithography apparatus and a lithographic cell
US7599064B2 (en) 2007-03-07 2009-10-06 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method, substrate for use in the methods
US7605907B2 (en) * 2007-03-27 2009-10-20 Asml Netherlands B.V. Method of forming a substrate for use in calibrating a metrology tool, calibration substrate and metrology tool calibration method
US7570358B2 (en) * 2007-03-30 2009-08-04 Asml Netherlands Bv Angularly resolved scatterometer, inspection method, lithographic apparatus, lithographic processing cell device manufacturing method and alignment sensor
US7656518B2 (en) * 2007-03-30 2010-02-02 Asml Netherlands B.V. Method of measuring asymmetry in a scatterometer, a method of measuring an overlay error in a substrate and a metrology apparatus
US8189195B2 (en) * 2007-05-09 2012-05-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7911612B2 (en) 2007-06-13 2011-03-22 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7460237B1 (en) 2007-08-02 2008-12-02 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
NL1036245A1 (en) 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method or diffraction based overlay metrology.
NL1036476A1 (en) * 2008-02-01 2009-08-04 Asml Netherlands Bv Alignment mark and a method of aligning a substrate including such an alignment mark.
US8004679B2 (en) * 2008-05-09 2011-08-23 Kla-Tencor Corporation Target design and methods for scatterometry overlay determination
EP2131243B1 (en) 2008-06-02 2015-07-01 ASML Netherlands B.V. Lithographic apparatus and method for calibrating a stage position
US8745546B2 (en) * 2011-12-29 2014-06-03 Nanya Technology Corporation Mask overlay method, mask, and semiconductor device using the same
CN103398666B (en) * 2013-05-27 2015-12-23 电子科技大学 A kind of dislocation of the interlayer for double-deck periodic micro structure method of testing
TW201935147A (en) * 2013-07-26 2019-09-01 美商克萊譚克公司 Reflection symmetric scatterometry overlay targets and methods
US9646902B2 (en) * 2013-08-12 2017-05-09 Taiwan Semiconductor Manufacturing Company Limited Paired edge alignment
US9257351B2 (en) 2013-08-15 2016-02-09 Globalfoundries Inc. Metrology marks for bidirectional grating superposition patterning processes
US9059102B2 (en) 2013-08-15 2015-06-16 International Business Machines Corporation Metrology marks for unidirectional grating superposition patterning processes
CN104111120B (en) * 2014-07-25 2017-05-31 中国科学院上海光学精密机械研究所 Phase extraction method based on bright strange shearing interferometer
CN111948239B (en) * 2015-04-28 2024-01-12 科磊股份有限公司 Computationally efficient X-ray based overlay measurement system and method
NL2017466A (en) * 2015-09-30 2017-04-05 Asml Netherlands Bv Metrology method, target and substrate
US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
KR102640173B1 (en) 2016-06-14 2024-02-26 삼성전자주식회사 Diffraction based overlay mark and metrology method
US9653404B1 (en) 2016-08-23 2017-05-16 United Microelectronics Corp. Overlay target for optically measuring overlay alignment of layers formed on semiconductor wafer
JP2021511532A (en) * 2018-01-12 2021-05-06 ケーエルエー コーポレイション Measurement targets and methods with an inclined periodic structure
EP3611567A3 (en) * 2019-07-23 2020-05-13 ASML Netherlands B.V. Improvements in metrology targets
CN114342053A (en) * 2019-09-16 2022-04-12 科磊股份有限公司 Offset metrology system and method for periodic semiconductor devices
WO2021072743A1 (en) 2019-10-18 2021-04-22 Yangtze Memory Technologies Co., Ltd. Systems and methods for evaluating critical dimensions based on diffraction-based overlay metrology
US11874102B2 (en) * 2019-12-30 2024-01-16 Kla Corporation Thick photo resist layer metrology target
WO2021158255A1 (en) * 2020-02-07 2021-08-12 Kla Corporation Non-orthogonal target and method for using the same in measuring misregistration of semiconductor devices
CN113539867A (en) * 2020-04-14 2021-10-22 中国科学院微电子研究所 Method for measuring alignment precision of semiconductor device
CN112435936B (en) * 2020-11-23 2022-03-15 长江存储科技有限责任公司 Overlay precision detection method and semiconductor structure
CN115346960A (en) * 2021-06-22 2022-11-15 福建省晋华集成电路有限公司 Alignment mark structure and semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4422763A (en) * 1978-12-08 1983-12-27 Rca Corporation Automatic photomask alignment system for projection printing
US4332473A (en) * 1979-01-31 1982-06-01 Tokyo Shibaura Denki Kabushiki Kaisha Apparatus for detecting a mutual positional relationship of two sample members
US4929083A (en) * 1986-06-19 1990-05-29 Xerox Corporation Focus and overlay characterization and optimization for photolithographic exposure
US4757207A (en) * 1987-03-03 1988-07-12 International Business Machines Corporation Measurement of registration of overlaid test patterns by the use of reflected light
US5087537A (en) * 1989-10-11 1992-02-11 International Business Machines Corporation Lithography imaging tool and related photolithographic processes
JP2893823B2 (en) * 1990-03-20 1999-05-24 株式会社ニコン Positioning method and apparatus
US5545593A (en) * 1993-09-30 1996-08-13 Texas Instruments Incorporated Method of aligning layers in an integrated circuit device
EP0721608B1 (en) * 1994-08-02 2003-10-01 Koninklijke Philips Electronics N.V. Method of repetitively imaging a mask pattern on a substrate
JP2669391B2 (en) * 1995-03-30 1997-10-27 日本電気株式会社 Semiconductor device
US6023338A (en) * 1996-07-12 2000-02-08 Bareket; Noah Overlay alignment measurement of wafers
US6498640B1 (en) * 1999-12-30 2002-12-24 Koninklijke Philips Electronics N.V. Method to measure alignment using latent image grating structures
US6383888B1 (en) * 2001-04-18 2002-05-07 Advanced Micro Devices, Inc. Method and apparatus for selecting wafer alignment marks based on film thickness variation

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE45245E1 (en) 2000-08-30 2014-11-18 Kla-Tencor Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US9182680B2 (en) 2000-08-30 2015-11-10 Kla-Tencor Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US9347879B2 (en) 2000-08-30 2016-05-24 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
US9103662B2 (en) 2001-04-10 2015-08-11 Kla-Tencor Corporation Periodic patterns and technique to control misalignment between two layers

Also Published As

Publication number Publication date
US20020135875A1 (en) 2002-09-26
TW556297B (en) 2003-10-01
JP2004519716A (en) 2004-07-02
WO2002069390A2 (en) 2002-09-06
US6855464B2 (en) 2005-02-15
US6699624B2 (en) 2004-03-02
US20040137341A1 (en) 2004-07-15
EP1379922A2 (en) 2004-01-14
WO2002069390A3 (en) 2003-11-13

Similar Documents

Publication Publication Date Title
US6699624B2 (en) Grating test patterns and methods for overlay metrology
EP1370828B1 (en) Line profile asymmetry measurement using scatterometry
JP4778021B2 (en) Inspection method and apparatus, lithographic apparatus, lithographic processing cell, and device manufacturing method
CN107924140B (en) Method and apparatus for measuring parameters of a lithographic process, substrate and patterning device for use in the method
KR101188532B1 (en) Continuously varying offset mark and methods of determining overlay
US7656528B2 (en) Periodic patterns and technique to control misalignment between two layers
US6949462B1 (en) Measuring an alignment target with multiple polarization states
EP1601931B1 (en) Method for detecting overlay errors using scatterometry
KR20180058819A (en) Measurement method, target and substrate
KR20180095932A (en) METROLOGY METHOD AND APPARATUS
KR101071654B1 (en) Line Profile Asymmetry Measurement
CN101261452B (en) Inspection method and apparatus, lithographic processing cell and device manufacturing method
JP2013522610A (en) Inspection for lithography
JP2016539370A (en) Method, apparatus and substrate for lithography metrology
US20230017491A1 (en) Metrology method and associated metrology and lithographic apparatuses
JP4235459B2 (en) Alignment method and apparatus and exposure apparatus
JP2004119477A (en) Superimposition inspection method and apparatus thereof
US11927892B2 (en) Alignment method and associated alignment and lithographic apparatuses
EP4167031A1 (en) Method of determining a measurement recipe in a metrology method
NL2024432A (en) Alignment method and associated alignment and lithographic apparatuses

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref country code: JP

Ref document number: 2002 568415

Kind code of ref document: A

Format of ref document f/p: F

WWE Wipo information: entry into national phase

Ref document number: 2002725005

Country of ref document: EP

AK Designated states

Kind code of ref document: C2

Designated state(s): JP KR SG

AL Designated countries for regional patents

Kind code of ref document: C2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

COP Corrected version of pamphlet

Free format text: PAGES 1/13-13/13, DRAWINGS, REPLACED BY NEW PAGES 1/11-11/11; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWP Wipo information: published in national office

Ref document number: 2002725005

Country of ref document: EP