WO2002073312A1 - Alternating phase shift masking for multiple levels of masking resolution - Google Patents
Alternating phase shift masking for multiple levels of masking resolution Download PDFInfo
- Publication number
- WO2002073312A1 WO2002073312A1 PCT/US2001/007413 US0107413W WO02073312A1 WO 2002073312 A1 WO2002073312 A1 WO 2002073312A1 US 0107413 W US0107413 W US 0107413W WO 02073312 A1 WO02073312 A1 WO 02073312A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phase shift
- width
- layout
- feature
- features
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Editing Of Facsimile Originals (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002572505A JP2004529378A (en) | 2001-03-08 | 2001-03-08 | Alternating phase shift masking for multi-level masking resolution |
EP01914759A EP1370909A1 (en) | 2001-03-08 | 2001-03-08 | Alternating phase shift masking for multiple levels of masking resolution |
PCT/US2001/007413 WO2002073312A1 (en) | 2001-03-08 | 2001-03-08 | Alternating phase shift masking for multiple levels of masking resolution |
US10/240,006 US6846596B2 (en) | 2001-03-08 | 2001-03-08 | Alternating phase shift masking for multiple levels of masking resolution |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2001/007413 WO2002073312A1 (en) | 2001-03-08 | 2001-03-08 | Alternating phase shift masking for multiple levels of masking resolution |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002073312A1 true WO2002073312A1 (en) | 2002-09-19 |
Family
ID=21742383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/007413 WO2002073312A1 (en) | 2001-03-08 | 2001-03-08 | Alternating phase shift masking for multiple levels of masking resolution |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1370909A1 (en) |
JP (1) | JP2004529378A (en) |
WO (1) | WO2002073312A1 (en) |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6553560B2 (en) | 2001-04-03 | 2003-04-22 | Numerical Technologies, Inc. | Alleviating line end shortening in transistor endcaps by extending phase shifters |
US6566019B2 (en) | 2001-04-03 | 2003-05-20 | Numerical Technologies, Inc. | Using double exposure effects during phase shifting to control line end shortening |
US6569583B2 (en) | 2001-05-04 | 2003-05-27 | Numerical Technologies, Inc. | Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts |
US6573010B2 (en) | 2001-04-03 | 2003-06-03 | Numerical Technologies, Inc. | Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator |
US6593038B2 (en) | 2001-05-04 | 2003-07-15 | Numerical Technologies, Inc. | Method and apparatus for reducing color conflicts during trim generation for phase shifters |
US6605481B1 (en) | 2002-03-08 | 2003-08-12 | Numerical Technologies, Inc. | Facilitating an adjustable level of phase shifting during an optical lithography process for manufacturing an integrated circuit |
US6635393B2 (en) | 2001-03-23 | 2003-10-21 | Numerical Technologies, Inc. | Blank for alternating PSM photomask with charge dissipation layer |
US6664009B2 (en) | 2001-07-27 | 2003-12-16 | Numerical Technologies, Inc. | Method and apparatus for allowing phase conflicts in phase shifting mask and chromeless phase edges |
US6698007B2 (en) | 2001-10-09 | 2004-02-24 | Numerical Technologies, Inc. | Method and apparatus for resolving coloring conflicts between phase shifters |
US6704921B2 (en) | 2002-04-03 | 2004-03-09 | Numerical Technologies, Inc. | Automated flow in PSM phase assignment |
US6738958B2 (en) | 2001-09-10 | 2004-05-18 | Numerical Technologies, Inc. | Modifying a hierarchical representation of a circuit to process composite gates |
WO2004053592A1 (en) * | 2002-12-09 | 2004-06-24 | Systems On Silicon Manufacturing Co. Pte. Ltd. | Reticle manipulations |
US6785879B2 (en) | 2002-06-11 | 2004-08-31 | Numerical Technologies, Inc. | Model-based data conversion |
US6787271B2 (en) | 2000-07-05 | 2004-09-07 | Numerical Technologies, Inc. | Design and layout of phase shifting photolithographic masks |
US6821689B2 (en) | 2002-09-16 | 2004-11-23 | Numerical Technologies | Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature |
US6846596B2 (en) | 2001-03-08 | 2005-01-25 | Numerical Technologies, Inc. | Alternating phase shift masking for multiple levels of masking resolution |
US6852471B2 (en) | 2001-06-08 | 2005-02-08 | Numerical Technologies, Inc. | Exposure control for phase shifting photolithographic masks |
US6866971B2 (en) | 2000-09-26 | 2005-03-15 | Synopsys, Inc. | Full phase shifting mask in damascene process |
US7083879B2 (en) | 2001-06-08 | 2006-08-01 | Synopsys, Inc. | Phase conflict resolution for photolithographic masks |
US7122281B2 (en) | 2002-02-26 | 2006-10-17 | Synopsys, Inc. | Critical dimension control using full phase and trim masks |
US7178128B2 (en) | 2001-07-13 | 2007-02-13 | Synopsys Inc. | Alternating phase shift mask design conflict resolution |
JP2014149827A (en) * | 2013-02-01 | 2014-08-21 | Dassault Systemes | Computer-implemented method for designing assembly of objects in three-dimensional scene of system of computer-aided design ("cad") |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5858580A (en) * | 1997-09-17 | 1999-01-12 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
GB2333613A (en) * | 1998-01-23 | 1999-07-28 | Sony Corp | Mask pattern generating method |
US6144081A (en) * | 1994-07-12 | 2000-11-07 | International Business Machines Corporation | Method to suppress subthreshold leakage due to sharp isolation corners in submicron FET structures |
-
2001
- 2001-03-08 JP JP2002572505A patent/JP2004529378A/en active Pending
- 2001-03-08 EP EP01914759A patent/EP1370909A1/en not_active Withdrawn
- 2001-03-08 WO PCT/US2001/007413 patent/WO2002073312A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6144081A (en) * | 1994-07-12 | 2000-11-07 | International Business Machines Corporation | Method to suppress subthreshold leakage due to sharp isolation corners in submicron FET structures |
US5858580A (en) * | 1997-09-17 | 1999-01-12 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
GB2333613A (en) * | 1998-01-23 | 1999-07-28 | Sony Corp | Mask pattern generating method |
Non-Patent Citations (1)
Title |
---|
HIDEYUKI JINBO ET AL: "IMPROVEMENT OF PHASE-SHIFTER EDGE LINE MASK METHOD", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 30, no. 11B PART 1, 1 November 1991 (1991-11-01), pages 2998 - 3003, XP000263404, ISSN: 0021-4922 * |
Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6787271B2 (en) | 2000-07-05 | 2004-09-07 | Numerical Technologies, Inc. | Design and layout of phase shifting photolithographic masks |
US7534531B2 (en) | 2000-09-26 | 2009-05-19 | Synopsys, Inc. | Full phase shifting mask in damascene process |
US7659042B2 (en) | 2000-09-26 | 2010-02-09 | Synopsys, Inc. | Full phase shifting mask in damascene process |
US6866971B2 (en) | 2000-09-26 | 2005-03-15 | Synopsys, Inc. | Full phase shifting mask in damascene process |
US6846596B2 (en) | 2001-03-08 | 2005-01-25 | Numerical Technologies, Inc. | Alternating phase shift masking for multiple levels of masking resolution |
US6635393B2 (en) | 2001-03-23 | 2003-10-21 | Numerical Technologies, Inc. | Blank for alternating PSM photomask with charge dissipation layer |
US6553560B2 (en) | 2001-04-03 | 2003-04-22 | Numerical Technologies, Inc. | Alleviating line end shortening in transistor endcaps by extending phase shifters |
US6573010B2 (en) | 2001-04-03 | 2003-06-03 | Numerical Technologies, Inc. | Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator |
US6566019B2 (en) | 2001-04-03 | 2003-05-20 | Numerical Technologies, Inc. | Using double exposure effects during phase shifting to control line end shortening |
US6859918B2 (en) | 2001-04-03 | 2005-02-22 | Numerical Technologies | Alleviating line end shortening by extending phase shifters |
US6593038B2 (en) | 2001-05-04 | 2003-07-15 | Numerical Technologies, Inc. | Method and apparatus for reducing color conflicts during trim generation for phase shifters |
US6569583B2 (en) | 2001-05-04 | 2003-05-27 | Numerical Technologies, Inc. | Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts |
US7169515B2 (en) | 2001-06-08 | 2007-01-30 | Synopsys, Inc. | Phase conflict resolution for photolithographic masks |
US7083879B2 (en) | 2001-06-08 | 2006-08-01 | Synopsys, Inc. | Phase conflict resolution for photolithographic masks |
US7422841B2 (en) | 2001-06-08 | 2008-09-09 | Synopsys, Inc. | Exposure control for phase shifting photolithographic masks |
US6852471B2 (en) | 2001-06-08 | 2005-02-08 | Numerical Technologies, Inc. | Exposure control for phase shifting photolithographic masks |
US7178128B2 (en) | 2001-07-13 | 2007-02-13 | Synopsys Inc. | Alternating phase shift mask design conflict resolution |
US6664009B2 (en) | 2001-07-27 | 2003-12-16 | Numerical Technologies, Inc. | Method and apparatus for allowing phase conflicts in phase shifting mask and chromeless phase edges |
US6738958B2 (en) | 2001-09-10 | 2004-05-18 | Numerical Technologies, Inc. | Modifying a hierarchical representation of a circuit to process composite gates |
US6698007B2 (en) | 2001-10-09 | 2004-02-24 | Numerical Technologies, Inc. | Method and apparatus for resolving coloring conflicts between phase shifters |
US7122281B2 (en) | 2002-02-26 | 2006-10-17 | Synopsys, Inc. | Critical dimension control using full phase and trim masks |
US6605481B1 (en) | 2002-03-08 | 2003-08-12 | Numerical Technologies, Inc. | Facilitating an adjustable level of phase shifting during an optical lithography process for manufacturing an integrated circuit |
US6704921B2 (en) | 2002-04-03 | 2004-03-09 | Numerical Technologies, Inc. | Automated flow in PSM phase assignment |
US7165234B2 (en) | 2002-06-11 | 2007-01-16 | Synopsys, Inc. | Model-based data conversion |
US6785879B2 (en) | 2002-06-11 | 2004-08-31 | Numerical Technologies, Inc. | Model-based data conversion |
US6821689B2 (en) | 2002-09-16 | 2004-11-23 | Numerical Technologies | Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature |
WO2004053592A1 (en) * | 2002-12-09 | 2004-06-24 | Systems On Silicon Manufacturing Co. Pte. Ltd. | Reticle manipulations |
JP2014149827A (en) * | 2013-02-01 | 2014-08-21 | Dassault Systemes | Computer-implemented method for designing assembly of objects in three-dimensional scene of system of computer-aided design ("cad") |
CN104008224A (en) * | 2013-02-01 | 2014-08-27 | 达索系统公司 | Computer-implemented method for designing an assembly of objects in a three-dimensional scene of a system of computer-aided design |
US10496761B2 (en) | 2013-02-01 | 2019-12-03 | Dassault Systemes | Computer-implemented method for designing an assembly of objects in a three-dimensional scene of a system of computer-aided design |
Also Published As
Publication number | Publication date |
---|---|
JP2004529378A (en) | 2004-09-24 |
EP1370909A1 (en) | 2003-12-17 |
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