WO2002075804A3 - Planarization of substrates using electrochemical mechanical polishing - Google Patents

Planarization of substrates using electrochemical mechanical polishing Download PDF

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Publication number
WO2002075804A3
WO2002075804A3 PCT/US2002/004806 US0204806W WO02075804A3 WO 2002075804 A3 WO2002075804 A3 WO 2002075804A3 US 0204806 W US0204806 W US 0204806W WO 02075804 A3 WO02075804 A3 WO 02075804A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
substrate surface
polishing article
electrolyte solution
planarization
Prior art date
Application number
PCT/US2002/004806
Other languages
French (fr)
Other versions
WO2002075804A2 (en
Inventor
Liang-Yuh Chen
Wei-Yung Hsu
Alain Duboust
Ratson Morad
Daniel A Carl
Sasson Somekh
Dan Maydan
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2002574121A priority Critical patent/JP2005508074A/en
Priority to KR1020037009383A priority patent/KR100849572B1/en
Priority to EP02717453A priority patent/EP1368826A2/en
Publication of WO2002075804A2 publication Critical patent/WO2002075804A2/en
Publication of WO2002075804A3 publication Critical patent/WO2002075804A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding

Abstract

A method and apparatus are provided for planarizing a material layer on a substrate. In one aspect, a method is provided for processing a substrate including forming a passivation layer on a substrate surface, polishing the substrate in an electrolyte solution, applying an anodic bias to the substrate surface, and removing material from at least a portion of the substrate surface. In another aspect, an apparatus is provided which includes a partial enclosure, polishing article, a cathode, a power source, a substrate carrier movably disposed above the polishing article, and a computer based controller to position a substrate in an electrolyte solution to form a passivation layer on a substrate surface, to polish the substrate in the electrolyte solution with the polishing article, and to apply an anodic bias to the substrate surface or polishing article to remove material from at least a portion of the substrate surface.
PCT/US2002/004806 2001-03-14 2002-02-19 Planarization of substrates using electrochemical mechanical polishing WO2002075804A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002574121A JP2005508074A (en) 2001-03-14 2002-02-19 Substrate planarization using electrolytic chemical mechanical polishing
KR1020037009383A KR100849572B1 (en) 2001-03-14 2002-02-19 Planarization of substrates using electrochemical mechanical polishing
EP02717453A EP1368826A2 (en) 2001-03-14 2002-02-19 Planarization of substrates using electrochemical mechanical polishing

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US27587401P 2001-03-14 2001-03-14
US60/275,874 2001-03-14
US28610701P 2001-04-24 2001-04-24
US60/286,107 2001-04-24
US32626301P 2001-10-01 2001-10-01
US60/326,263 2001-10-01
US10/038,066 US6811680B2 (en) 2001-03-14 2002-01-03 Planarization of substrates using electrochemical mechanical polishing
US10/038,066 2002-01-03

Publications (2)

Publication Number Publication Date
WO2002075804A2 WO2002075804A2 (en) 2002-09-26
WO2002075804A3 true WO2002075804A3 (en) 2003-06-26

Family

ID=27488497

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/004806 WO2002075804A2 (en) 2001-03-14 2002-02-19 Planarization of substrates using electrochemical mechanical polishing

Country Status (7)

Country Link
US (2) US6811680B2 (en)
EP (1) EP1368826A2 (en)
JP (1) JP2005508074A (en)
KR (1) KR100849572B1 (en)
CN (1) CN1276483C (en)
TW (1) TW590846B (en)
WO (1) WO2002075804A2 (en)

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