WO2002080183A3 - Memory cell structural test - Google Patents
Memory cell structural test Download PDFInfo
- Publication number
- WO2002080183A3 WO2002080183A3 PCT/US2002/007340 US0207340W WO02080183A3 WO 2002080183 A3 WO2002080183 A3 WO 2002080183A3 US 0207340 W US0207340 W US 0207340W WO 02080183 A3 WO02080183 A3 WO 02080183A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- memory cell
- structural test
- cell structural
- bit lines
- memory cells
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5004—Voltage
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE60212103T DE60212103T2 (en) | 2001-03-30 | 2002-03-08 | STRUCTURED MEMORY CELL TEST |
JP2002578510A JP2004530243A (en) | 2001-03-30 | 2002-03-08 | Memory cell structural test |
EP02717602A EP1374250B1 (en) | 2001-03-30 | 2002-03-08 | Memory cell structural test |
KR1020037012883A KR100544362B1 (en) | 2001-03-30 | 2002-03-08 | Memory cell structural test |
HK04103384A HK1060437A1 (en) | 2001-03-30 | 2004-05-13 | Memory cell structural test |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/823,642 US6757209B2 (en) | 2001-03-30 | 2001-03-30 | Memory cell structural test |
US09/823,642 | 2001-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002080183A2 WO2002080183A2 (en) | 2002-10-10 |
WO2002080183A3 true WO2002080183A3 (en) | 2003-04-17 |
Family
ID=25239313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/007340 WO2002080183A2 (en) | 2001-03-30 | 2002-03-08 | Memory cell structural test |
Country Status (10)
Country | Link |
---|---|
US (1) | US6757209B2 (en) |
EP (1) | EP1374250B1 (en) |
JP (1) | JP2004530243A (en) |
KR (1) | KR100544362B1 (en) |
CN (1) | CN100538910C (en) |
AT (1) | ATE329354T1 (en) |
DE (1) | DE60212103T2 (en) |
HK (1) | HK1060437A1 (en) |
MY (1) | MY127555A (en) |
WO (1) | WO2002080183A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8010853B2 (en) | 2005-09-30 | 2011-08-30 | Fujitsu Semiconductor Ltd. | Semiconductor storage device and memory test circuit |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7480195B2 (en) * | 2005-05-11 | 2009-01-20 | Micron Technology, Inc. | Internal data comparison for memory testing |
US7602778B2 (en) * | 2005-06-29 | 2009-10-13 | Cisco Technology, Inc. | System and methods for compressing message headers |
US7548473B2 (en) * | 2006-04-14 | 2009-06-16 | Purdue Research Foundation | Apparatus and methods for determining memory device faults |
CN101714407B (en) * | 2009-11-12 | 2012-08-08 | 钰创科技股份有限公司 | Row address reserved storage location trigger circuit and row address reserved storage location device |
JP6430194B2 (en) * | 2014-09-29 | 2018-11-28 | ルネサスエレクトロニクス株式会社 | Semiconductor memory device |
CN108051767B (en) * | 2018-01-04 | 2019-07-19 | 南京国睿安泰信科技股份有限公司 | A kind of automatic diagnosis method for integrated circuit tester |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5894445A (en) * | 1997-05-06 | 1999-04-13 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device |
DE19908513A1 (en) * | 1998-05-28 | 1999-12-02 | Samsung Electronics Co Ltd | Semiconductor memory device with parallel bit test mode |
US6064601A (en) * | 1997-12-29 | 2000-05-16 | Samsung Electronics Co., Ltd. | Integrated circuit memory devices and controlling methods that simultaneously activate multiple column select lines during a write cycle of a parallel bit test mode |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57105897A (en) * | 1980-12-23 | 1982-07-01 | Fujitsu Ltd | Semiconductor storage device |
US4503536A (en) | 1982-09-13 | 1985-03-05 | General Dynamics | Digital circuit unit testing system utilizing signature analysis |
US4527272A (en) | 1982-12-06 | 1985-07-02 | Tektronix, Inc. | Signature analysis using random probing and signature memory |
JPS61261895A (en) * | 1985-05-16 | 1986-11-19 | Toshiba Corp | Semiconductor memory device |
JPS61292300A (en) * | 1985-06-18 | 1986-12-23 | Toshiba Corp | Facilitating circuit for on-chip memory test |
JP2523586B2 (en) * | 1987-02-27 | 1996-08-14 | 株式会社日立製作所 | Semiconductor memory device |
JP2831767B2 (en) * | 1990-01-10 | 1998-12-02 | 株式会社アドバンテスト | Semiconductor memory test equipment |
JPH04212799A (en) * | 1990-01-31 | 1992-08-04 | Nec Ic Microcomput Syst Ltd | Semiconductor memory built in test circuit |
JPH04211160A (en) * | 1990-03-20 | 1992-08-03 | Mitsubishi Electric Corp | Semiconductor memory |
KR940007240B1 (en) * | 1992-02-21 | 1994-08-10 | 현대전자산업 주식회사 | Parallel test circuit |
JP3251637B2 (en) * | 1992-05-06 | 2002-01-28 | 株式会社東芝 | Semiconductor storage device |
JP3307473B2 (en) * | 1992-09-09 | 2002-07-24 | ソニー エレクトロニクス インコーポレイテッド | Test circuit for semiconductor memory |
JPH07211099A (en) * | 1994-01-12 | 1995-08-11 | Sony Corp | Semiconductor storage device testing apparatus |
JPH07307100A (en) * | 1994-05-11 | 1995-11-21 | Nec Corp | Memory integrated circuit |
US5708598A (en) * | 1995-04-24 | 1998-01-13 | Saito; Tamio | System and method for reading multiple voltage level memories |
JP3607407B2 (en) * | 1995-04-26 | 2005-01-05 | 株式会社日立製作所 | Semiconductor memory device |
US5973967A (en) * | 1997-01-03 | 1999-10-26 | Programmable Microelectronics Corporation | Page buffer having negative voltage level shifter |
US6002623A (en) * | 1997-02-12 | 1999-12-14 | Micron Technology, Inc. | Semiconductor memory with test circuit |
US5963497A (en) * | 1998-05-18 | 1999-10-05 | Silicon Aquarius, Inc. | Dynamic random access memory system with simultaneous access and refresh operations and methods for using the same |
JP2001210095A (en) * | 2000-01-24 | 2001-08-03 | Mitsubishi Electric Corp | Memory module |
US6353568B1 (en) * | 2000-12-29 | 2002-03-05 | Lsi Logic Corporation | Dual threshold voltage sense amplifier |
-
2001
- 2001-03-30 US US09/823,642 patent/US6757209B2/en not_active Expired - Fee Related
-
2002
- 2002-01-21 MY MYPI20020232A patent/MY127555A/en unknown
- 2002-03-08 JP JP2002578510A patent/JP2004530243A/en not_active Ceased
- 2002-03-08 WO PCT/US2002/007340 patent/WO2002080183A2/en active IP Right Grant
- 2002-03-08 AT AT02717602T patent/ATE329354T1/en not_active IP Right Cessation
- 2002-03-08 DE DE60212103T patent/DE60212103T2/en not_active Expired - Fee Related
- 2002-03-08 CN CNB028106474A patent/CN100538910C/en not_active Expired - Fee Related
- 2002-03-08 EP EP02717602A patent/EP1374250B1/en not_active Expired - Lifetime
- 2002-03-08 KR KR1020037012883A patent/KR100544362B1/en not_active IP Right Cessation
-
2004
- 2004-05-13 HK HK04103384A patent/HK1060437A1/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5894445A (en) * | 1997-05-06 | 1999-04-13 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device |
US6064601A (en) * | 1997-12-29 | 2000-05-16 | Samsung Electronics Co., Ltd. | Integrated circuit memory devices and controlling methods that simultaneously activate multiple column select lines during a write cycle of a parallel bit test mode |
DE19908513A1 (en) * | 1998-05-28 | 1999-12-02 | Samsung Electronics Co Ltd | Semiconductor memory device with parallel bit test mode |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8010853B2 (en) | 2005-09-30 | 2011-08-30 | Fujitsu Semiconductor Ltd. | Semiconductor storage device and memory test circuit |
Also Published As
Publication number | Publication date |
---|---|
US6757209B2 (en) | 2004-06-29 |
CN100538910C (en) | 2009-09-09 |
ATE329354T1 (en) | 2006-06-15 |
EP1374250A2 (en) | 2004-01-02 |
HK1060437A1 (en) | 2004-08-06 |
DE60212103T2 (en) | 2007-01-04 |
KR20030085084A (en) | 2003-11-01 |
JP2004530243A (en) | 2004-09-30 |
EP1374250B1 (en) | 2006-06-07 |
MY127555A (en) | 2006-12-29 |
DE60212103D1 (en) | 2006-07-20 |
KR100544362B1 (en) | 2006-01-23 |
WO2002080183A2 (en) | 2002-10-10 |
CN1537312A (en) | 2004-10-13 |
US20020141259A1 (en) | 2002-10-03 |
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