WO2002082447A3 - Soft program and soft program verify of the core cells in flash memory array - Google Patents

Soft program and soft program verify of the core cells in flash memory array Download PDF

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Publication number
WO2002082447A3
WO2002082447A3 PCT/US2001/048734 US0148734W WO02082447A3 WO 2002082447 A3 WO2002082447 A3 WO 2002082447A3 US 0148734 W US0148734 W US 0148734W WO 02082447 A3 WO02082447 A3 WO 02082447A3
Authority
WO
WIPO (PCT)
Prior art keywords
soft program
cell
soft
flash memory
selectively
Prior art date
Application number
PCT/US2001/048734
Other languages
French (fr)
Other versions
WO2002082447A2 (en
Inventor
Santosh K Yachareni
Darlene G Hamilton
Binh Q Le
Kazuhiro Kurihara
Original Assignee
Advanced Micro Devices Inc
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc, Fujitsu Ltd filed Critical Advanced Micro Devices Inc
Priority to AU2002230944A priority Critical patent/AU2002230944A1/en
Priority to DE60115716T priority patent/DE60115716T2/en
Priority to KR1020037013262A priority patent/KR100828196B1/en
Priority to JP2002580327A priority patent/JP4068464B2/en
Priority to EP01991202A priority patent/EP1415302B1/en
Publication of WO2002082447A2 publication Critical patent/WO2002082447A2/en
Publication of WO2002082447A3 publication Critical patent/WO2002082447A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data

Abstract

A method (900) and system (400) are disclosed for memory cell soft program and soft program verify, to adjust, or correct the threshold voltage (350) between a target minimum (380) and maximum (390), which may be employed in assoication with a dual bit memory cell architecture (50). The method (900) includes applying one reference voltage signal (455) to the over erased core cell, and a diference cell (480), comparing the two currents (475) produced by each, selectively verifying (485, 435) proper soft programming of one or more bits of the cell (405), determining that the dual bit memory cell is properly soft programmed (950). The method may also comprise selectively re-verifying (950, 955) proper soft programming of the cells after selectively soft programming (965) at least one or more bits (980) of the cell.
PCT/US2001/048734 2001-04-09 2001-12-12 Soft program and soft program verify of the core cells in flash memory array WO2002082447A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AU2002230944A AU2002230944A1 (en) 2001-04-09 2001-12-12 Soft program and soft program verify of the core cells in flash memory array
DE60115716T DE60115716T2 (en) 2001-04-09 2001-12-12 SOFT PROGRAMMING AND SOFT PROGRAMMING VERIFICATION OF FLASH MEMORY CELLS
KR1020037013262A KR100828196B1 (en) 2001-04-09 2001-12-12 Soft program and soft program verify of the core cells in flash memory array
JP2002580327A JP4068464B2 (en) 2001-04-09 2001-12-12 Soft program and soft program verification of core cells in a flash memory array
EP01991202A EP1415302B1 (en) 2001-04-09 2001-12-12 Soft program and soft program verify of the core cells in flash memory array

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/829,193 US6493266B1 (en) 2001-04-09 2001-04-09 Soft program and soft program verify of the core cells in flash memory array
US09/829,193 2001-04-09

Publications (2)

Publication Number Publication Date
WO2002082447A2 WO2002082447A2 (en) 2002-10-17
WO2002082447A3 true WO2002082447A3 (en) 2003-03-06

Family

ID=25253800

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/048734 WO2002082447A2 (en) 2001-04-09 2001-12-12 Soft program and soft program verify of the core cells in flash memory array

Country Status (9)

Country Link
US (1) US6493266B1 (en)
EP (1) EP1415302B1 (en)
JP (1) JP4068464B2 (en)
KR (1) KR100828196B1 (en)
CN (1) CN100365735C (en)
AU (1) AU2002230944A1 (en)
DE (1) DE60115716T2 (en)
TW (1) TW584858B (en)
WO (1) WO2002082447A2 (en)

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Also Published As

Publication number Publication date
KR20030096307A (en) 2003-12-24
TW584858B (en) 2004-04-21
EP1415302A2 (en) 2004-05-06
US6493266B1 (en) 2002-12-10
CN1494720A (en) 2004-05-05
DE60115716T2 (en) 2006-07-13
KR100828196B1 (en) 2008-05-08
AU2002230944A1 (en) 2002-10-21
JP4068464B2 (en) 2008-03-26
CN100365735C (en) 2008-01-30
JP2004524643A (en) 2004-08-12
DE60115716D1 (en) 2006-01-12
US20030021155A1 (en) 2003-01-30
WO2002082447A2 (en) 2002-10-17
EP1415302B1 (en) 2005-12-07

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