WO2002082491A3 - Plasma source having supplemental energizer for ion enhancement - Google Patents

Plasma source having supplemental energizer for ion enhancement Download PDF

Info

Publication number
WO2002082491A3
WO2002082491A3 PCT/US2002/010335 US0210335W WO02082491A3 WO 2002082491 A3 WO2002082491 A3 WO 2002082491A3 US 0210335 W US0210335 W US 0210335W WO 02082491 A3 WO02082491 A3 WO 02082491A3
Authority
WO
WIPO (PCT)
Prior art keywords
supplemental
plasma
energizer
signal generator
antenna assembly
Prior art date
Application number
PCT/US2002/010335
Other languages
French (fr)
Other versions
WO2002082491A2 (en
Inventor
Aseem Srivastava
Daniel Richardson
Original Assignee
Axcelis Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Tech Inc filed Critical Axcelis Tech Inc
Priority to AU2002256040A priority Critical patent/AU2002256040A1/en
Publication of WO2002082491A2 publication Critical patent/WO2002082491A2/en
Publication of WO2002082491A3 publication Critical patent/WO2002082491A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Abstract

A supplemental ion source (74) for a plasma processing system (10) having a plasma processing chamber (16) is provided. The ion source (74) comprises: a signal generator (82, 96) for generating an output signal; and an antenna assembly (76, 90) located proximate the process chamber (16), whereby energization of the antenna assembly by the signal generator ionizes plasma confined within the processing chamber (16) to create plasma having a substantial ionized content. The antenna assembly (76, 90) is generally planar in shape and may take the form of a plate or coil antenna. The signal generator preferably generates an output signal in the radio frequency (RF) range. The supplemental energizer operates independently of the first plasma source such that either, or both, may be switched on or off at any time.
PCT/US2002/010335 2001-04-06 2002-04-04 Plasma source having supplemental energizer for ion enhancement WO2002082491A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002256040A AU2002256040A1 (en) 2001-04-06 2002-04-04 Plasma source having supplemental energizer for ion enhancement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82805501A 2001-04-06 2001-04-06
US09/828,055 2001-04-06

Publications (2)

Publication Number Publication Date
WO2002082491A2 WO2002082491A2 (en) 2002-10-17
WO2002082491A3 true WO2002082491A3 (en) 2002-12-05

Family

ID=25250817

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/010335 WO2002082491A2 (en) 2001-04-06 2002-04-04 Plasma source having supplemental energizer for ion enhancement

Country Status (3)

Country Link
AU (1) AU2002256040A1 (en)
TW (1) TW533752B (en)
WO (1) WO2002082491A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050205211A1 (en) * 2004-03-22 2005-09-22 Vikram Singh Plasma immersion ion implantion apparatus and method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324553A (en) * 1993-04-30 1994-06-28 Energy Conversion Devices, Inc. Method for the improved microwave deposition of thin films
US5453305A (en) * 1991-12-13 1995-09-26 International Business Machines Corporation Plasma reactor for processing substrates
US6083363A (en) * 1997-07-02 2000-07-04 Tokyo Electron Limited Apparatus and method for uniform, low-damage anisotropic plasma processing
US6225745B1 (en) * 1999-12-17 2001-05-01 Axcelis Technologies, Inc. Dual plasma source for plasma process chamber

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453305A (en) * 1991-12-13 1995-09-26 International Business Machines Corporation Plasma reactor for processing substrates
US5324553A (en) * 1993-04-30 1994-06-28 Energy Conversion Devices, Inc. Method for the improved microwave deposition of thin films
US6083363A (en) * 1997-07-02 2000-07-04 Tokyo Electron Limited Apparatus and method for uniform, low-damage anisotropic plasma processing
US6225745B1 (en) * 1999-12-17 2001-05-01 Axcelis Technologies, Inc. Dual plasma source for plasma process chamber

Also Published As

Publication number Publication date
TW533752B (en) 2003-05-21
WO2002082491A2 (en) 2002-10-17
AU2002256040A1 (en) 2002-10-21

Similar Documents

Publication Publication Date Title
EP0169744A3 (en) Ion source
GB2378041A (en) A reconfigurable plasma antenna
EP1106709A3 (en) Pulsed-mode RF bias for side-wall coverage improvement
WO2000024037A8 (en) Method of ion fragmentation in a quadrupole ion trap
TW335517B (en) Apparatus and method for processing plasma
TW326616B (en) Plasma processing method and apparatus
WO2003017319A3 (en) Method of selectively inhibiting reaction between ions
WO2001040532A3 (en) Gas cluster ion beam low mass ion filter
CA2444766A1 (en) Method and apparatus for sequential plasma treatment
TW376547B (en) Method and apparatus for plasma processing
TW353195B (en) Plasma processing system
WO2001031683A8 (en) Plasma doping system comprising a hollow cathode
ATE158384T1 (en) ELECTRONIC CYCLOTRON RESONANCE ION ENGINE
KR890003266A (en) Plasma treatment method and apparatus
AU1918997A (en) Production of chips by electromagnetic (e.g. microwave) and vacuum treatment
CA2279229A1 (en) Method and apparatus to produce large inductive plasma for plasma processing
WO2004031435A3 (en) High-power pulsed magnetron sputtering
TW200629337A (en) Reactor for performing a plasma-assisted treatment on a substrate
AU2002213451A1 (en) System, apparatus, and method for processing wafer using single frequency rf power in plasma processing chamber
EP2259663A3 (en) Plasma generator, plasma control method and method of producing substrate
AU1918801A (en) Plasma processing systems and method therefor
WO2002060072A3 (en) Radio frequency transmitter and methods thereof
EP0844313A3 (en) Method and apparatus for sputtering in a chamber having an inductively coupled plasma
ATE271717T1 (en) DEVICE FOR GENERATING POWERFUL MICROWAVE PLASMS
WO2002071816A3 (en) Improved double chamber ion implantation system

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

AK Designated states

Kind code of ref document: A3

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP