WO2002084742A1 - Switched laser array modulation with integral electroabsorption modulator - Google Patents

Switched laser array modulation with integral electroabsorption modulator

Info

Publication number
WO2002084742A1
WO2002084742A1 PCT/US2002/010120 US0210120W WO02084742A1 WO 2002084742 A1 WO2002084742 A1 WO 2002084742A1 US 0210120 W US0210120 W US 0210120W WO 02084742 A1 WO02084742 A1 WO 02084742A1
Authority
WO
WIPO (PCT)
Prior art keywords
lasers
electro
array
absorption
photonic device
Prior art date
Application number
PCT/US2002/010120
Other languages
French (fr)
Inventor
Edward C. Vail
Gideon Yoffe
Bardia Pezeshki
Mark Emanuel
John Heanue
Original Assignee
Santur Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santur Corporation filed Critical Santur Corporation
Publication of WO2002084742A1 publication Critical patent/WO2002084742A1/en

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/501—Structural aspects
    • H04B10/503—Laser transmitters
    • H04B10/505—Laser transmitters using external modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/501—Structural aspects
    • H04B10/506—Multiwavelength transmitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Definitions

  • the invention relates generally to photonic devices, and more particularly to laser arrays with commonly mounted electro-absorption modulators.
  • Lasers are often used in telecommunication devices to provide light.
  • the light is generally modulated in some fashion to provide a data transport mechanism.
  • a receiver receives the modulated light and provides the data to other units for processing.
  • a transport media often used is fiber optic cabling. For some systems, such as Dense Wavelength
  • DWDM Wave Division Multiplexing
  • the light is sometimes modulated by directly varying the laser current.
  • modulation performed by directly varying laser output results in data signals with unsuitable waveforms when received at a receiver. This is often a result of parasitic FM modulation, or chirp, interacting with dispersion due to the fiber serving as a transport medium.
  • the light is instead modulated by passing the light through a modulator, with the modulator varying the light in accordance with a data signal received by the modulator.
  • These modulators are often separate units, which increases system cost.
  • individual modulators, such as electro-absorption modulators may be better adapted to process light at a particular wavelength. As a DWDM system carries light at a number of wavelengths, the use of a common electro-absorption modulator may not provide optimal system performance for all the wavelength channels.
  • the invention provides a photonic device incorporating an array of lasers with electro-absorption modulators on a common substrate.
  • FIG. 1 illustrates a laser array with electro-absorption modulators for each laser in the laser array
  • FIG. 2 is a schematic of an equivalent circuit for the electro-absorption modulators of ! FIG. 1;
  • FIG. 3 is a schematic of a simplified equivalent circuit for the electro-absorption modulators of FIG. 1;
  • FIG. 4 illustrates an example laser of an array of lasers
  • FIG. 5 illustrates a laser array with electro-absorption modulators with an optical switch coupling light from a selected laser to an optical output
  • FIG. 6 is illustrates a device including a laser array with electro-absorption modulators with a MEMS mirror coupling light from a selected laser to an optical output; and 10
  • FIG. 7 is a semi-block diagram of a device including an array of lasers with the laser grouped into subgroups, with the subgroups having associated electro-absorption modulators.
  • FIG. 1 illustrates a photonic device in accordance with aspects of the invention.
  • photonic device includes an array of lasers 11 la-d.
  • the lasers are formed on a common substrate 113.
  • Each laser provides light, when the laser is activated, to a corresponding electro-absorption modulator.
  • laser 11 la provides light to electro-absorption modulator 115.
  • the lasers and electro-absorption modulators are formed on a common
  • the common substrate is mounted on a submount 117.
  • Each of the lasers is provided a drive line, with, for example, laser 11 la provided drive line 121.
  • the drive line is used to activate, or forward bias the laser, causing the laser to lase.
  • Light emitted from the laser is provided to the corresponding electro-absorption 25 modulator.
  • the electro-absorption modulators are provided a common high speed data signal by a data signal line 123, with the electro-absorption modulators coupled in parallel. Also coupled in parallel is a matching resistor 119, which is mounted on the submount.
  • the lasers are spaced apart by approximately 10 microns, with the electro-absorption modulators having the same spacing for such a configuration of lasers.
  • the electro-absorption modulators have a band gap appropriate for the output wavelength of the corresponding laser, which may vary from laser to laser in some applications. In other embodiments, however, the electro-absorption modulators have the same band gap.
  • JJ In one embodiment of the device of FIG. 1 each of the lasers of the array of lasers emit light at different wavelengths. In operation for one embodiment a single laser, for example laser Ilia, is turned on through application of a drive signal to drive line 121.
  • a 1 high speed data signal is applied to the data signal line, which supplies the data signal to all of the electro-absorption modulators.
  • light from the single laser passes through one of the electro-absorption modulators, and the resulting light is modulated to include the data signal.
  • electro-absorption modulators As light is passing through a single electro-absorption modulator, the remaining electro-absorption modulators need not receive the data signal. However, compared to lasers electro-absorption modulators are relatively small in size, approximately 100-200 microns in length. Electro-absorption are modulators are operated with reverse bias. Accordingly,
  • electro-absorption modulators have a relatively small capacitance, which allows multiple electro-absorption modulators to receive high speed signals, such as the data signal. Moreover, providing the high speed data signal to all of the electro-absorption modulators removes the need for provision in the data signal line of a switch adapted for switching high speed signals.
  • a number of electro-absorption modulators 211 are coupled in parallel using line 213. Also coupled in parallel with the electro-absorption modulators is a matching resistor 215, provided for proper termination of the line.
  • a matching resistor 215 is also coupled in parallel with the electro-absorption modulators.
  • the capacitance of all the electro-absorption modulators may be excessive for optimal operation. In such a
  • FIG. 3 shows a simplified equivalent circuit for a lumped transmission line version of FIG. 2.
  • a line 313, having lumped inductances 315 couples capacitances 311 in parallel.
  • the capacitances are primarily provided by the electro-absorption modulators.
  • inductances are provided between the electro-absorption modulators, partly formed of external inductors and partly formed by the inductance of wire bonds. Accordingly, in one embodiment the inductance between the electro-absorption modulators is matched to the capacitance of each electro-absorption modulator such that an effective continous transmission line is provided.
  • the total capacitance is approximately 6 pF.
  • the resulting time constant is approximately 300 ps. Accordingly, in one embodiment the electro- absorption modulators are connected in series to form a lumped element transmission line.
  • an inductance of approximately 6.25 nH is provided.
  • the inductance is provided by using a wire of length of approximately 1 cm, with a normal aspect ratio between wire and ground.
  • an inductor is coupled to the drive line to provide the inductance, with in one embodiment the inductor being formed using a spiral inductor having an area of approximately 100 urn sqaure.
  • Such an inductor maybe mounted on a semiconductor device forming the array of lasers, or approximate the semiconductor device.
  • FIG. 4 illustrates further details of a semiconductor waveguide laser such as may be used with the device of FIG. 1.
  • the laser of FIG. 4 is a simple ridge waveguide laser, though in other embodiments buried hetero-structure, buried rib, or other types of lasers are used.
  • the laser epitaxial layers are grown on an n-type InP substrate 411.
  • a first layer of the laser is an n-type epitaxially grown InP lower cladding layer 413, then an undoped InGaAsP quaternary active layer 415 comprising a quantum well and barrier layers, and then a top p- type InP cladding layer 417.
  • the top p-type InP cladding layer is etched in the shape of a ridge using conventional photolithography.
  • the growth is interrupted midway and a grating is etched into the laser (not shown). After the ridge is etched, the wafer is coated with an insulating dielectric 419, such as silicon nitride, with the dielectric removed on top of the ridge.
  • an insulating dielectric 419 such as silicon nitride
  • Metallization is applied to the top of the ridge, as shown by element 423.
  • a second metallization step provides a contact regions 425, shown at the end of the stripe.
  • the backside 427 of the substrate is also metallized to form an electrical contact. In operation, current flowing vertically through the laser, from the cladding layer 417 to the substrate contact 427, causes the laser to lase.
  • electro-absorption modulators are formed using different epitaxial layers than the lasers. Accordingly, in one embodiment the electro-absorption modulators are formed by etching off laser layers and regrowing layers for the electro-absorption modulators. In another embodiment selective epitaxial growth techniques are used to vary the composition of the epitaxial layers, allowing for formation of the electro-absorption modulators on the laser chip. For example, in one embodiment the quantum wells of the lasers and the electro-absorption modulator are fabricated in the same epitaxial step, but with a dielectric mask present on the wafer during the growth. The mask has wider regions around the laser opening than around the modulator opening, thus creating thicker quantum wells in the laser than in the modulator.
  • the wider quantum wells of the laser cause the bandgap to be lower in energy than in the modulator, and thus the modulator would be largely transparent at the lasing wavelength with no reverse bias.
  • the bandgap of the modulator shrinks, and the absorption increases correspondingly to vary the output intensity.
  • FIG. 5 illustrates a device using an array of combined lasers 511 and electro- absorption modulators 512, the array for example such as previously described.
  • the array of lasers is an array of single frequency lasers, such as distributed feedback (DFB) devices, on a semiconductor substrate.
  • DFB distributed feedback
  • Each laser of the array of lasers is designed to operate at a different lasing wavelength.
  • a number of techniques can be used to assign different wavelengths to each laser. These techniques include directly writing gratings with electron beam lithography, stepping a window mask during multiple holographic exposures, UV exposure through an appropriately fabricated phase mask, or changing the effective index of the mode of the lasers.
  • a controlled phase shift is also included in the laser or gain/loss coupling is used in the grating.
  • the wavelength of such lasers can be accurately controlled through dimensional variables, such as stripe width or layer thickness, and varied across the array.
  • Contact pads such as contact pad 513, are provided for injecting current into each of the lasers of the array of lasers.
  • a further contact pad 521 is provided for providing a high speed data signal to the electro-absorption modulators.
  • Light emitted from a laser passes through a corresponding electro-absorption modulator and is directed to an optical switch 515.
  • the optical switch directs light from a one of the lasers to an optical output, illustrated in FIG. 5 as an optical fiber 517.
  • the optical switch may be a MicroElectrical-Mechanical System (MEMS) mirror, which is translatable or rotatable along one, two, or more axis to direct light to the optical fiber.may be used in various embodiments.
  • MEMS MicroElectrical-Mechanical System
  • a switch may selectively provide a signal to a selected laser.
  • the radiation or light from the lasers is transmitted to the optical switch.
  • the optical switch has a number of states. In each particular state of a set of states, one of the input optical beams, i.e., light from one of the lasers, is transferred to the optical fiber.
  • FIG. 6 illustrates a system in accordance with the system of FIG. 5 wherein a MEMS mirror is used to direct light from an array to an optical output.
  • a semiconductor device 611 includes an array of lasers 613 and associated electro-absorption modulators 614.
  • Light emitted from a selected one of the laser and associated electro- absorption modulators passes through a collimating lens 615.
  • the collimated light strikes a tilt mirror, rotatable in one embodiment, which directs the light through a focusing lens and into an optical output.
  • the optical output is an optical fiber.
  • lasers forming an array of lasers are assigned to a sub-group, with a particular device having several sub-groups. Each sub-group has a single electro-absorption modulator.
  • FIG. 7 Such a device is illustrated in FIG. 7.
  • an array of lasers 711 is formed on a substrate 721.
  • nine lasers are shown, although the number may vary.
  • Each of the lasers are allocated to a sub-group, with some of the lasers in a first subgroup 713a, some of the lasers in a second sub-group 713b, and some of the lasers in a third sub-group 713c.
  • the first sub-group includes three lasers 715a-c.
  • the lasers 715a-c are coupled to a combiner 717, also on the substrate.
  • Use of the combiner 717 results in a loss of light intensity, but the use of a combiner for each sub-group reduces the loss from the case where all of the lasers are configured to provide light to a single combiner.
  • the combiner 717 provides light from lasers in the first sub-group to an electro- absorption modulator 719, also on the substrate.
  • Each of the combiners for the other subgroups pass light to an electro-absorption modulator associated with each of the other subgroups.
  • the number of electro-absorption modulators, and capacitance associated therewith is reduced.

Abstract

A photonic device including an array of lasers providing light to an array of electro-absoption modulators, both on a common substrate. In some embodiments the lasers are in a closely spaced array and laser at different wavelengths, providing with associated electro-absorption modulators a compact wavelength selectable laser.

Description

SWITCHED LASER ARRAY MODULATION WITH INTEGRAL
ELECTROABSORPTION MODULATOR
BACKGROUND The invention relates generally to photonic devices, and more particularly to laser arrays with commonly mounted electro-absorption modulators.
Lasers are often used in telecommunication devices to provide light. The light is generally modulated in some fashion to provide a data transport mechanism. A receiver receives the modulated light and provides the data to other units for processing. A transport media often used is fiber optic cabling. For some systems, such as Dense Wavelength
Division Multiplexing (DWDM) system, light at a number of wavelengths is passed simultaneously through the transport media to increase data bandwidth.
The light is sometimes modulated by directly varying the laser current. However, in many applications modulation performed by directly varying laser output results in data signals with unsuitable waveforms when received at a receiver. This is often a result of parasitic FM modulation, or chirp, interacting with dispersion due to the fiber serving as a transport medium. Accordingly, in many instances the light is instead modulated by passing the light through a modulator, with the modulator varying the light in accordance with a data signal received by the modulator. These modulators are often separate units, which increases system cost. Moreover, individual modulators, such as electro-absorption modulators, may be better adapted to process light at a particular wavelength. As a DWDM system carries light at a number of wavelengths, the use of a common electro-absorption modulator may not provide optimal system performance for all the wavelength channels.
BRIEF SUMMARY OF THE INVENTION
The invention provides a photonic device incorporating an array of lasers with electro-absorption modulators on a common substrate.
These and other aspects of the invention will be more fully comprehended after study of this disclosure including the accompanying figures.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 illustrates a laser array with electro-absorption modulators for each laser in the laser array;
FIG. 2 is a schematic of an equivalent circuit for the electro-absorption modulators of ! FIG. 1;
FIG. 3 is a schematic of a simplified equivalent circuit for the electro-absorption modulators of FIG. 1;
FIG. 4 illustrates an example laser of an array of lasers;
FIG. 5 illustrates a laser array with electro-absorption modulators with an optical switch coupling light from a selected laser to an optical output;
FIG. 6 is illustrates a device including a laser array with electro-absorption modulators with a MEMS mirror coupling light from a selected laser to an optical output; and 10 FIG. 7 is a semi-block diagram of a device including an array of lasers with the laser grouped into subgroups, with the subgroups having associated electro-absorption modulators.
DESCRIPTION
FIG. 1 illustrates a photonic device in accordance with aspects of the invention. The
15 photonic device includes an array of lasers 11 la-d. The lasers are formed on a common substrate 113. Each laser provides light, when the laser is activated, to a corresponding electro-absorption modulator. For example, laser 11 la provides light to electro-absorption modulator 115. The lasers and electro-absorption modulators are formed on a common
20 substrate 113. The common substrate is mounted on a submount 117.
Each of the lasers is provided a drive line, with, for example, laser 11 la provided drive line 121. The drive line is used to activate, or forward bias the laser, causing the laser to lase. Light emitted from the laser is provided to the corresponding electro-absorption 25 modulator. The electro-absorption modulators are provided a common high speed data signal by a data signal line 123, with the electro-absorption modulators coupled in parallel. Also coupled in parallel is a matching resistor 119, which is mounted on the submount.
In one embodiment, the lasers are spaced apart by approximately 10 microns, with the electro-absorption modulators having the same spacing for such a configuration of lasers. In one embodiment the electro-absorption modulators have a band gap appropriate for the output wavelength of the corresponding laser, which may vary from laser to laser in some applications. In other embodiments, however, the electro-absorption modulators have the same band gap. JJ In one embodiment of the device of FIG. 1 each of the lasers of the array of lasers emit light at different wavelengths. In operation for one embodiment a single laser, for example laser Ilia, is turned on through application of a drive signal to drive line 121. A 1 high speed data signal is applied to the data signal line, which supplies the data signal to all of the electro-absorption modulators. Thus, light from the single laser passes through one of the electro-absorption modulators, and the resulting light is modulated to include the data signal.
As light is passing through a single electro-absorption modulator, the remaining electro-absorption modulators need not receive the data signal. However, compared to lasers electro-absorption modulators are relatively small in size, approximately 100-200 microns in length. Electro-absorption are modulators are operated with reverse bias. Accordingly,
10 electro-absorption modulators have a relatively small capacitance, which allows multiple electro-absorption modulators to receive high speed signals, such as the data signal. Moreover, providing the high speed data signal to all of the electro-absorption modulators removes the need for provision in the data signal line of a switch adapted for switching high speed signals.
15
Thus, in FIG. 2 a number of electro-absorption modulators 211 are coupled in parallel using line 213. Also coupled in parallel with the electro-absorption modulators is a matching resistor 215, provided for proper termination of the line. In some applications, the capacitance of all the electro-absorption modulators may be excessive for optimal operation. In such a
20 circumstance, or in general, a lumped transmission line may be used. FIG. 3 shows a simplified equivalent circuit for a lumped transmission line version of FIG. 2. As shown in FIG. 3, a line 313, having lumped inductances 315, couples capacitances 311 in parallel. The capacitances are primarily provided by the electro-absorption modulators. The lumped
25 inductances are provided between the electro-absorption modulators, partly formed of external inductors and partly formed by the inductance of wire bonds. Accordingly, in one embodiment the inductance between the electro-absorption modulators is matched to the capacitance of each electro-absorption modulator such that an effective continous transmission line is provided. 30
For an example system including twelve electro-absorption modulators having 0.5 pF capacitance, the total capacitance is approximately 6 pF. For a 50 ohm transmission line the resulting time constant is approximately 300 ps. Accordingly, in one embodiment the electro- absorption modulators are connected in series to form a lumped element transmission line. In
■3 -5 order to match the impedance of a 50 ohm transmission line an inductance of approximately 6.25 nH is provided. In one embodiment the inductance is provided by using a wire of length of approximately 1 cm, with a normal aspect ratio between wire and ground. In another embodiment, however, an inductor is coupled to the drive line to provide the inductance, with in one embodiment the inductor being formed using a spiral inductor having an area of approximately 100 urn sqaure. Such an inductor maybe mounted on a semiconductor device forming the array of lasers, or approximate the semiconductor device.
FIG. 4 illustrates further details of a semiconductor waveguide laser such as may be used with the device of FIG. 1. The laser of FIG. 4 is a simple ridge waveguide laser, though in other embodiments buried hetero-structure, buried rib, or other types of lasers are used. The laser epitaxial layers are grown on an n-type InP substrate 411. A first layer of the laser is an n-type epitaxially grown InP lower cladding layer 413, then an undoped InGaAsP quaternary active layer 415 comprising a quantum well and barrier layers, and then a top p- type InP cladding layer 417. The top p-type InP cladding layer is etched in the shape of a ridge using conventional photolithography. For a DFB laser, the growth is interrupted midway and a grating is etched into the laser (not shown). After the ridge is etched, the wafer is coated with an insulating dielectric 419, such as silicon nitride, with the dielectric removed on top of the ridge.
Metallization is applied to the top of the ridge, as shown by element 423. A second metallization step provides a contact regions 425, shown at the end of the stripe. The backside 427 of the substrate is also metallized to form an electrical contact. In operation, current flowing vertically through the laser, from the cladding layer 417 to the substrate contact 427, causes the laser to lase.
In general, electro-absorption modulators are formed using different epitaxial layers than the lasers. Accordingly, in one embodiment the electro-absorption modulators are formed by etching off laser layers and regrowing layers for the electro-absorption modulators. In another embodiment selective epitaxial growth techniques are used to vary the composition of the epitaxial layers, allowing for formation of the electro-absorption modulators on the laser chip. For example, in one embodiment the quantum wells of the lasers and the electro-absorption modulator are fabricated in the same epitaxial step, but with a dielectric mask present on the wafer during the growth. The mask has wider regions around the laser opening than around the modulator opening, thus creating thicker quantum wells in the laser than in the modulator. The wider quantum wells of the laser cause the bandgap to be lower in energy than in the modulator, and thus the modulator would be largely transparent at the lasing wavelength with no reverse bias. As the voltage is increased, the bandgap of the modulator shrinks, and the absorption increases correspondingly to vary the output intensity.
FIG. 5 illustrates a device using an array of combined lasers 511 and electro- absorption modulators 512, the array for example such as previously described. In the device of FIG. 5 the array of lasers is an array of single frequency lasers, such as distributed feedback (DFB) devices, on a semiconductor substrate. Each laser of the array of lasers is designed to operate at a different lasing wavelength. A number of techniques can be used to assign different wavelengths to each laser. These techniques include directly writing gratings with electron beam lithography, stepping a window mask during multiple holographic exposures, UV exposure through an appropriately fabricated phase mask, or changing the effective index of the mode of the lasers. Generally, for stable single mode characteristics, either a controlled phase shift is also included in the laser or gain/loss coupling is used in the grating. The wavelength of such lasers can be accurately controlled through dimensional variables, such as stripe width or layer thickness, and varied across the array.
Contact pads, such as contact pad 513, are provided for injecting current into each of the lasers of the array of lasers. A further contact pad 521 is provided for providing a high speed data signal to the electro-absorption modulators. Light emitted from a laser passes through a corresponding electro-absorption modulator and is directed to an optical switch 515. The optical switch directs light from a one of the lasers to an optical output, illustrated in FIG. 5 as an optical fiber 517.
A variety of devices may be used as the optical switch. For example, the optical switch may be a MicroElectrical-Mechanical System (MEMS) mirror, which is translatable or rotatable along one, two, or more axis to direct light to the optical fiber.may be used in various embodiments.
In operation, when current is injected into a laser of the array of lasers using, for example, contact pad 513, the laser emits radiation with a specific wavelength, which passes through the corresponding electro-absorption modulator and emits from a particular position on the substrate, as represented by an arrow 519. In one embodiment, one laser is operated at a time, depending on the desired wavelength. Thus, as is described with respect to other figures, a switch may selectively provide a signal to a selected laser. The radiation or light from the lasers is transmitted to the optical switch. The optical switch has a number of states. In each particular state of a set of states, one of the input optical beams, i.e., light from one of the lasers, is transferred to the optical fiber.
FIG. 6 illustrates a system in accordance with the system of FIG. 5 wherein a MEMS mirror is used to direct light from an array to an optical output. In the system of FIG. 6 a semiconductor device 611 includes an array of lasers 613 and associated electro-absorption modulators 614. Light emitted from a selected one of the laser and associated electro- absorption modulators passes through a collimating lens 615. The collimated light strikes a tilt mirror, rotatable in one embodiment, which directs the light through a focusing lens and into an optical output. As illustrated, the optical output is an optical fiber.
As previously mentioned, at times driving an array of electro-absorption modulator with a single high speed data signal may present difficulties due to the capacitance of the electro-absorption modulators. This may be particularly the case when a device includes a relatively large number of lasers and associated electro-absorption modulators. Accordingly, in one embodiment lasers forming an array of lasers are assigned to a sub-group, with a particular device having several sub-groups. Each sub-group has a single electro-absorption modulator.
Such a device is illustrated in FIG. 7. In the device of FIG. 7 an array of lasers 711 is formed on a substrate 721. As illustrated nine lasers are shown, although the number may vary. Each of the lasers are allocated to a sub-group, with some of the lasers in a first subgroup 713a, some of the lasers in a second sub-group 713b, and some of the lasers in a third sub-group 713c.
Taking the first sub-group as an example, the first sub-group includes three lasers 715a-c. The lasers 715a-c are coupled to a combiner 717, also on the substrate. Use of the combiner 717 results in a loss of light intensity, but the use of a combiner for each sub-group reduces the loss from the case where all of the lasers are configured to provide light to a single combiner.
The combiner 717 provides light from lasers in the first sub-group to an electro- absorption modulator 719, also on the substrate. Each of the combiners for the other subgroups pass light to an electro-absorption modulator associated with each of the other subgroups. Thus, the number of electro-absorption modulators, and capacitance associated therewith, is reduced.
The invention therefore provides a photonic device. Although the invention has been described with respect to certain embodiments, it should be recognized that the invention comprises the claims and their equivalents supported by this disclosure.

Claims

1. A photonic device comprising: an array of lasers on a substrate, each of the lasers in the array of lasers provided a separate drive line; and an array of electro-absorption modulators on the substrate, the electro-absorption modulators receiving light emitted from at least one of the lasers in the array of lasers, the electro-absorption modulators receiving a common data signal from a data signal line.
2. The photonic device of claim 1 wherein the data signal line couples the electro- absorption modulators in parallel, such that the common data signal drives all of the electro- absorption modulators.
3. The photonic device of claim 2 wherein the data signal line includes a matching resistor, the matching resistor serving to terminate a transmission line formed by the data signal line and associated elements.
4. The photonic device of claim 3 wherein the data signal lme includes inductors between the electro-absorption modulators, whereby the inductance of the data signal line including inductors and capacitance provided by the electro-absorption modulators provides an effective lumped transmission line.
5. The photonic device of claim 4 wherein the inductors are spiral inductors mounted on a semiconductor device formed on the substrate.
6. The photonic device of claim 1 further comprising an optical switch, the optical switch directing light emitted by a one of the lasers in the array of lasers and passed through a one of the electro-absorption modulators to an optical output path.
7. The photonic device of claim 6 wherein the optical switch comprises a moveable MEMS element.
8. The photonic device of claim 6 wherein spacing of the lasers in the array of lasers is j on the order of 10 microns.
9. The photonic device of claim 6 wherein spacing of the lasers in the array of lasers is approximately 10 microns. 5
10. The photonic device of claim 8 wherein the lasers in the array of lasers each emit light at a different wavelength.
10 11. The photonic device of claim 6 wherein each1 electro-absorption modulator is associated with a laser in the array of lasers, and each electro-absorption modulator receives light from the associated laser.
12. The photonic device of claim 11 wherein the bandgap of each electro-absorption
15 modulator varies, with the bandgap varied as a function of the wavelength of light emitted from a laser associated with each electro-absorption modulater.
13. The photonic device of claim 1 wherein the lasers in the array of lasers form a
20 plurality of sub-groups, with an electro-absorption modulator associated with each sub-group.
14. The photonic device of claim 13 further comprising a combiner for each sub-group, each combiner configured to combine light from the lasers in a sub-group and provide the 5 light to the electro-absorption modulator associated with the sub-group.
15. The photonic device of claim 14 further comprising an optical switch, the optical switch directing light emitted by a one of the lasers in the array of lasers and passed through a one of the electro-absorption modulators to an optical output path.
16. The photonic device of claim 15 wherein the optical switch is a MEMS mirror.
17. The photonic device of claim 15 wherein spacing of the lasers in the array of lasers is on the order of 10 microns.
18. The photonic device of claim 15 wherein spacing of the lasers in the array of lasers is approximately 10 microns.
19. The photonic device of claim 18 wherein the lasers in the array of lasers each emit light at a different wavelength.
20. A semiconductor device for providing a modulated light signal from a closely packed laser array, the modulated signal being at a selectable wavelength, the semiconductor device comprising: an array of lasers formed on a substrate, the lasers in the array of lasers each lasing at a different frequency, the lasers in the array of lasers being spaced approximately 10 microns apart; an array of electro-absorption modulators formed on the substrate, each of the electro- absorption modulators being associated with a laser in the array of lasers, each electro- absorption modulator receiving light from their associated laser when the associated laser lases.
21. The semiconductor device of claim 20 wherein the lasers have separate drive lines and the electro-absorption modulators have a common data signal line.
22. The semiconductor device of claim 21 wherein the substrate is mounted on a submount, and the common data signal line is coupled to a matching resistor mounted on the submount.
23. A photonic device comprising: a plurality of lasers formed on a substrate; a plurality of combiners, each of the combiners combining light from a number of different lasers of the plurality of lasers; a plurality of electro-absorption modulators formed on the substrate, each of the electro-absorption modulators associated with and receiving light from a different combiner.
PCT/US2002/010120 2001-03-30 2002-04-01 Switched laser array modulation with integral electroabsorption modulator WO2002084742A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114122907A (en) * 2021-11-05 2022-03-01 南京大学 High-speed high-power optical transmission module based on parallel recombination of reconstruction equivalent chirped laser array chips

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6975659B2 (en) * 2001-09-10 2005-12-13 Fuji Photo Film Co., Ltd. Laser diode array, laser device, wave-coupling laser source, and exposure device
AU2005203550A1 (en) * 2004-08-23 2006-03-09 Furukawa Co., Ltd. Laser apparatus
US20060140233A1 (en) * 2004-12-28 2006-06-29 Jesse Chin Laser driver with integrated bond options for selectable currents
US8000368B2 (en) * 2006-07-26 2011-08-16 Santur Corporation Modulated semiconductor DFB laser array with a MEMS-based RF switch
KR20130085498A (en) * 2011-12-12 2013-07-30 한국전자통신연구원 Multichannel transmitter optical module
US9660421B2 (en) 2013-10-07 2017-05-23 Neophotonics Corporation Dynamically-distributable multiple-output pump for fiber optic amplifier
KR102191374B1 (en) * 2016-11-22 2020-12-16 한국전자통신연구원 Optical transmitter module

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4725131A (en) * 1985-03-11 1988-02-16 Trw Inc. Laser combiner
US5383216A (en) * 1992-12-28 1995-01-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser with light modulator
US5706117A (en) * 1995-05-18 1998-01-06 Fujitsu Limited Drive circuit for electro-absorption optical modulator and optical transmitter including the optical modulator
US5870512A (en) * 1997-05-30 1999-02-09 Sdl, Inc. Optimized interferometrically modulated array source
US6172781B1 (en) * 1998-03-18 2001-01-09 Lucent Technologies Inc. Wave division multiplexed optical network

Family Cites Families (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4009385A (en) 1976-03-22 1977-02-22 Bell Telephone Laboratories, Incorporated Laser control circuit
US4304460A (en) 1978-03-10 1981-12-08 Matsushita Electric Industrial Co., Ltd. Optical switching device
JPS5660088A (en) 1979-10-22 1981-05-23 Nec Corp Multiwavelength light source
US4317611A (en) 1980-05-19 1982-03-02 International Business Machines Corporation Optical ray deflection apparatus
US4359773A (en) 1980-07-07 1982-11-16 Bell Telephone Laboratories, Incorporated Semiconductor lasers with selective driving circuit
US4866699A (en) 1987-06-22 1989-09-12 Bell Communications Research, Inc. Optical telecommunications system using code division multiple access
US4796266A (en) 1987-12-21 1989-01-03 Bell Communications Research, Inc. Laser driver circuit with dynamic bias
US5002349A (en) 1989-11-29 1991-03-26 Bell Communications Research, Inc. Integrated acousto-optic filters and switches
US5136598A (en) 1990-05-31 1992-08-04 The United States Of America As Represented By The Secretary Of The Navy Modulated high-power optical source
US5132824A (en) 1990-08-31 1992-07-21 Bell Communications Research, Inc. Liquid-crystal modulator array
US5305338A (en) 1990-09-25 1994-04-19 Mitsubishi Denki Kabushiki Kaisha Switch device for laser
GB9103262D0 (en) 1991-02-15 1991-08-21 Marconi Gec Ltd Optical systems
US5784507A (en) 1991-04-05 1998-07-21 Holm-Kennedy; James W. Integrated optical wavelength discrimination devices and methods for fabricating same
US5289485A (en) 1991-09-10 1994-02-22 Micracor, Inc. Multi-element optically pumped external cavity laser system
JP3248155B2 (en) 1991-12-26 2002-01-21 富士通株式会社 Driving method of semiconductor laser
JPH05190947A (en) 1992-01-10 1993-07-30 Fujitsu Ltd Driving method of semiconductor laser
JP3223562B2 (en) 1992-04-07 2001-10-29 株式会社日立製作所 Optical transmission device, optical transmission device, and optical modulator
US5283796A (en) 1992-04-21 1994-02-01 Hughes Aircraft Company Phase plate or spiral phase wheel driven linear frequency chirped laser
DE69312799T2 (en) 1992-05-18 1998-02-12 Philips Electronics Nv Optoelectronic semiconductor device
US5291502A (en) 1992-09-04 1994-03-01 The Board Of Trustees Of The Leland Stanford, Jr. University Electrostatically tunable optical device and optical interconnect for processors
JP3322712B2 (en) 1993-01-14 2002-09-09 松下電器産業株式会社 Starting method of optical tuner and optical tuner
US5379310A (en) 1993-05-06 1995-01-03 Board Of Trustees Of The University Of Illinois External cavity, multiple wavelength laser transmitter
US5378330A (en) 1993-05-07 1995-01-03 Panasonic Technologies, Inc. Method for polishing micro-sized structures
US5414540A (en) 1993-06-01 1995-05-09 Bell Communications Research, Inc. Frequency-selective optical switch employing a frequency dispersive element, polarization dispersive element and polarization modulating elements
US5394489A (en) 1993-07-27 1995-02-28 At&T Corp. Wavelength division multiplexed optical communication transmitters
US5570180A (en) 1993-08-27 1996-10-29 Minolta Co., Ltd. Spectrometer provided with an optical shutter
US6044705A (en) 1993-10-18 2000-04-04 Xros, Inc. Micromachined members coupled for relative rotation by torsion bars
US5629790A (en) 1993-10-18 1997-05-13 Neukermans; Armand P. Micromachined torsional scanner
WO1995013638A1 (en) 1993-11-08 1995-05-18 International Business Machines Corporation Hybrid external coupled cavity semiconductor laser device
US5491576A (en) * 1993-12-23 1996-02-13 At&T Corp. Dual-wavelength data transmitter for reducing fading in an optical transmission system
US5428635A (en) 1994-01-11 1995-06-27 American Biogenetic Sciences, Inc. Multi-wavelength tunable laser
US5524076A (en) 1994-01-28 1996-06-04 Northern Telecom Limited Chirp control of a Mach-Zehnder optical modulator using non-equal power splitting
JP3611593B2 (en) * 1994-02-14 2005-01-19 日本オプネクスト株式会社 Method for fabricating semiconductor optical device
US5519487A (en) 1994-12-30 1996-05-21 Corning Incorporated Method for monitoring the position of a fiber
US5526171A (en) 1995-01-18 1996-06-11 The Trustees Of Princeton University Laser pulse shaper
US5612968A (en) 1995-04-20 1997-03-18 Bell Communications Research, Inc. Redundant multi-wavelength laser arrays
US5504609A (en) 1995-05-11 1996-04-02 Ciena Corporation WDM optical communication system with remodulators
US5719650A (en) 1995-05-12 1998-02-17 Massachusetts Institute Of Technology High-fidelity spatial light modulator
US5930045A (en) 1995-07-26 1999-07-27 Fujitsu, Ltd. Optical apparatus which uses a virtually imaged phased array to produce chromatic dispersion
AU6119396A (en) 1995-07-27 1997-02-26 Jds Fitel Inc. Method and device for wavelength locking
US5771253A (en) 1995-10-13 1998-06-23 The Board Of Trustees Of The Leland Stanford Junior University High performance micromechanical tunable verticle cavity surface emitting laser
US6215118B1 (en) 1995-11-02 2001-04-10 Agilent Technologies, Inc. Autoalignment and autofocus mechanism for coupling light between an optical fiber and a physical specimen
US5682262A (en) 1995-12-13 1997-10-28 Massachusetts Institute Of Technology Method and device for generating spatially and temporally shaped optical waveforms
US5777763A (en) 1996-01-16 1998-07-07 Bell Communications Research, Inc. In-line optical wavelength reference and control module
US5771252A (en) 1996-01-29 1998-06-23 Sdl, Inc. External cavity, continuously tunable wavelength source
US5882468A (en) 1996-02-23 1999-03-16 International Business Machines Corporation Thickness control of semiconductor device layers in reactive ion etch processes
JP2955986B2 (en) 1996-05-22 1999-10-04 日本電気株式会社 Semiconductor optical modulator and method of manufacturing the same
US5959750A (en) 1996-06-06 1999-09-28 Lucent Technologies Inc. Method of upgrading transmission capacity by Raman amplification
US5715047A (en) 1996-07-08 1998-02-03 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Scanning mode sensor for detection of flow inhomogeneities
US5825792A (en) 1996-07-11 1998-10-20 Northern Telecom Limited Wavelength monitoring and control assembly for WDM optical transmission systems
JPH10117040A (en) 1996-10-08 1998-05-06 Nec Corp Semiconductor laser element and manufacture of the same
KR100204590B1 (en) 1996-11-27 1999-06-15 정선종 Optical laser and harmonic mode locking method using it
JPH10173291A (en) 1996-12-11 1998-06-26 Mitsubishi Electric Corp Semiconductor laser device
GB9701627D0 (en) 1997-01-27 1997-03-19 Plessey Telecomm Wavelength manager
US5999303A (en) 1997-03-24 1999-12-07 Seagate Technology Inc. Micro-machined mirror using tethered elements
WO1999002939A1 (en) 1997-07-14 1999-01-21 Spectral Dimensions, Inc. Methods and devices for very rapid scan interferometry
US6201629B1 (en) 1997-08-27 2001-03-13 Microoptical Corporation Torsional micro-mechanical mirror system
KR100269171B1 (en) 1997-08-28 2000-10-16 윤종용 Dispersion compensation apparatus in optical fiber communication network
US6212151B1 (en) 1997-11-12 2001-04-03 Iolon, Inc. Optical switch with coarse and fine deflectors
JP3119223B2 (en) 1997-12-18 2000-12-18 日本電気株式会社 External mirror type tunable laser
US5977567A (en) 1998-01-06 1999-11-02 Lightlogic, Inc. Optoelectronic assembly and method of making the same
JP3792040B2 (en) 1998-03-06 2006-06-28 松下電器産業株式会社 Bidirectional optical semiconductor device
US6275317B1 (en) * 1998-03-10 2001-08-14 Agere Systems Optoelectronics Guardian Corp. Hybrid integration of a wavelength selectable laser source and optical amplifier/modulator
US5993544A (en) * 1998-03-30 1999-11-30 Neocera, Inc. Non-linear optical thin film layer system
US6133615A (en) 1998-04-13 2000-10-17 Wisconsin Alumni Research Foundation Photodiode arrays having minimized cross-talk between diodes
JPH11326707A (en) 1998-05-08 1999-11-26 Matsushita Electric Ind Co Ltd Laser photocoupler and control method for laser photocoupling
US6256328B1 (en) 1998-05-15 2001-07-03 University Of Central Florida Multiwavelength modelocked semiconductor diode laser
US6033515A (en) 1998-07-17 2000-03-07 Lightpath Technologies, Inc. Use of a laser to fusion-splice optical components of substantially different cross-sectional areas
US6327063B1 (en) 1998-10-02 2001-12-04 Hughes Electronics Corporation Reconfigurable laser communications terminal
US6091537A (en) 1998-12-11 2000-07-18 Xerox Corporation Electro-actuated microlens assemblies
US6227724B1 (en) 1999-01-11 2001-05-08 Lightlogic, Inc. Method for constructing an optoelectronic assembly
US6175668B1 (en) 1999-02-26 2001-01-16 Corning Incorporated Wideband polarization splitter, combiner, isolator and controller
US6181717B1 (en) 1999-06-04 2001-01-30 Bandwidth 9 Tunable semiconductor laser system
JP4604304B2 (en) 1999-07-09 2011-01-05 ソニー株式会社 Laser apparatus, optical head, and optical recording / reproducing apparatus
US6295308B1 (en) 1999-08-31 2001-09-25 Corning Incorporated Wavelength-locked external cavity lasers with an integrated modulator
US6847661B2 (en) 1999-09-20 2005-01-25 Iolon, Inc. Tunable laser with microactuator
JP2001144367A (en) 1999-11-11 2001-05-25 Mitsubishi Electric Corp Semiconductor laser device and its drive method
US6483969B1 (en) 1999-12-01 2002-11-19 The United States Of America As Represented By The Secretary Of The Army Apparatus, assembly, and method for making micro-fixtured lensed assembly for optoelectronic devices and optical fibers
FR2805092A1 (en) 2000-02-10 2001-08-17 Corning Inc LASER SOURCE THAT CAN BE SELECTED BY MEMS
US6754243B2 (en) 2000-08-09 2004-06-22 Jds Uniphase Corporation Tunable distributed feedback laser
US6914916B2 (en) * 2000-10-30 2005-07-05 Santur Corporation Tunable controlled laser array
JP2004513385A (en) 2000-10-30 2004-04-30 サンター　コーポレイション Control of laser / fiber coupling
WO2002058197A2 (en) 2000-10-30 2002-07-25 Santur Corporation Laser thermal tuning
US20020076480A1 (en) 2000-12-15 2002-06-20 Yung-Chieh Hsieh Low cost step tunable light source
JP2002246699A (en) 2001-02-19 2002-08-30 Hitachi Ltd Laser module and optical information processor
US6522793B1 (en) 2001-11-21 2003-02-18 Andrei Szilagyi Low voltage electro-optic modulator with integrated driver

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4725131A (en) * 1985-03-11 1988-02-16 Trw Inc. Laser combiner
US5383216A (en) * 1992-12-28 1995-01-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser with light modulator
US5706117A (en) * 1995-05-18 1998-01-06 Fujitsu Limited Drive circuit for electro-absorption optical modulator and optical transmitter including the optical modulator
US5870512A (en) * 1997-05-30 1999-02-09 Sdl, Inc. Optimized interferometrically modulated array source
US6172781B1 (en) * 1998-03-18 2001-01-09 Lucent Technologies Inc. Wave division multiplexed optical network

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114122907A (en) * 2021-11-05 2022-03-01 南京大学 High-speed high-power optical transmission module based on parallel recombination of reconstruction equivalent chirped laser array chips
CN114122907B (en) * 2021-11-05 2023-11-17 南京大学 High-speed high-power light emitting module based on parallel recombination of reconstructed equivalent chirp laser array chip

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