WO2002095378A1 - Method for sample separation and lift-out - Google Patents

Method for sample separation and lift-out Download PDF

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Publication number
WO2002095378A1
WO2002095378A1 PCT/US2001/016644 US0116644W WO02095378A1 WO 2002095378 A1 WO2002095378 A1 WO 2002095378A1 US 0116644 W US0116644 W US 0116644W WO 02095378 A1 WO02095378 A1 WO 02095378A1
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WO
WIPO (PCT)
Prior art keywords
wafer
sample
probe
lift
sample separation
Prior art date
Application number
PCT/US2001/016644
Other languages
French (fr)
Inventor
Thomas M. Moore
Rocky D. Kruger
Cheryl Hartfield
Original Assignee
Moore Thomas M
Kruger Rocky D
Cheryl Hartfield
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Moore Thomas M, Kruger Rocky D, Cheryl Hartfield filed Critical Moore Thomas M
Priority to PCT/US2001/016644 priority Critical patent/WO2002095378A1/en
Priority to EP01945982.5A priority patent/EP1436601B1/en
Priority to US09/863,571 priority patent/US6420722B2/en
Publication of WO2002095378A1 publication Critical patent/WO2002095378A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3109—Cutting

Definitions

  • the invention relates to methods for separating and manipulating microscopic samples from objects within electron-beam or ion-beam instruments.
  • the present invention relates to a method for separating a sample and a method for preparing the separated sample for analysis, in cases where analysis is desired; and particularly relates to a method for separating a minute sample region from a substrate such as a semiconductor wafer.
  • This application describes embodiments in which a sample is cut out of a semiconductor wafer or other object by use of a focused ion beam ("FIB") and analyzed, if desired, through a transmission electron microscope (“TEM”), or by other means.
  • FIB focused ion beam
  • TEM transmission electron microscope
  • a chip, or ribbon having a length of several mm and a width of 100-500 ⁇ m is cut out from a semiconductor integrated circuit wafer by use of a diamond wafering saw.
  • the chip is mounted on a standard TEM grid. Then the chip is formed into a thin sample (typically 50 ⁇ m) by the FIB.
  • the thin film sample is irradiated with an electron beam and observed by use of the TEM.
  • a sample is thinned by polishing, while being observed. With this method, it is difficult to set the place of observation and direction of the sample desirably and precisely. It is necessary to carry out a step in which a region having a length of several mm and a width of 100-500 ⁇ m, and including a portion to be analyzed, is mechanically separated from the chip of an integrated circuit or semiconductor wafer. When a wafer is a sample substrate, it is necessary to divide the wafer for observation.
  • the invention is a method for sample separation and lift-out within a FIB instrument.
  • the preferred embodiment comprises the steps of, first, cleaving a wafer, having an area of interest, or target, to be removed, so as to place the target near the edge of the cleaved wafer. Then, the tip of a micromanipulator probe is fixed to the wafer by ion-beam metal deposition.
  • the FIB ion-beam is positioned at an angle of approximately 50 degrees to the plane of the wafer, and the ion beam cuts a U-shaped path on the surface of the wafer, so that the path surrounds the target and the fixed probe, and completely released the sample from the wafer.
  • the stage of the FIB is lowered slightly, so that the wafer is lowered beneath the released sample, now attached to the probe.
  • the probe with the sample fixed to it is moved to a TEM grid.
  • the TEM grid is preferably cut across its plane so as to provide a V-shape open above. The opening allows easy access to the V-shape for placement of the sample and further operations with the ion beam.
  • the sample is then fixed to the TEM grid by ion-beam metal deposition, and the probe is then cut by the ion-beam and detached from the fixed sample.
  • the sample may now be thinned by the ion beam for TEM inspection, or inspected by other means.
  • only one ion-beam cut at one angle is necessary to release the sample from the wafer and allow it to be lifted out.
  • Figure 1 is a typical wafer with an area of interest shown. The wafer is cut to create an edge near the area of interest.
  • Figure 2 shows the attachment of a probe to the wafer.
  • Figure 3 shows the FIB cutting out a sample bearing the area of interest, or target.
  • Figure 4 shows removal of the sample from the wafer.
  • Figures 5, 6, 7, and 8 show the attachment of the sample to a TEM grid, and detachment of the probe. 1
  • Figure 1 shows a semiconductor wafer (100) which has been cleaved or sawed so
  • the "wafer” (100) need not be a semiconductor device. It
  • 10 may, for example be a micromechanical device, or any substance whatever requiring
  • the FIB may be either a single-beam model, or a dual-beam model.
  • 16 position of the ion beam (160) should be set on the target (110). The sample should rest
  • the angle ⁇ can be any angle
  • the wafer (100) will be perpendicular to the electron 0 beam, if the FIB has an electron beam in addition to the ion beam (160).
  • 1 Figure 2 shows a probe (120) that has made contact with the wafer (100) near 2 the target (110).
  • the probe (120) is a component of a conventional micro-manipulator 3 tool which is attached to the FIB instrument with vacuum feed-through.
  • a typical such 4 micro-manipulator tool is the Model 100 by Omniprobe, Inc. of Dallas, Texas.
  • the 5 probe (120) is moved until its tip makes physical contact with the wafer (100), as shown 6 in Figure 2.
  • the operator then preferably uses ion-beam metal deposition to form a weld 7 (130) that fixes the tip of the probe (120) to the wafer (100).
  • Other methods may be 8 used to fix the probe (120) to the wafer (100), such as electrostatic attraction or 9 adhesives.
  • the pattern is preferably U-shaped around the target (110), although a rectangular area, or an arbitrary shape enclosing the target (110) could also be used.
  • This area defines the sample area to be milled by the ion-beam (160).
  • the milling cut (150) should be as thick as necessary to prevent redeposited material from filling the cut. This will depend on the properties of the wafer (100).
  • the specified pattern is milled to completely cut out the sample (140). Gas-assisted etching may also be used, if desired. This operation is illustrated in Figure 3. By viewing the image as the operation proceeds, it will be possible to see when the sample (140) is completely detached.
  • the operator will increase the distance between the probe (120) (now holding the sample (140) and target (110)), and the remaining wafer (100), preferably by lowering the FIB stage height by at least 5-10 ⁇ m to drop the wafer (100).
  • the operator withdraws the probe (120) holding the target (110) so the sample (140) will be clear of any obstacles when the wafer (100) is exchanged for the TEM grid (200).
  • the sample holder need not be a TEM grid (200) as shown, but may be another type of holder or device suitable for the intended inspection.
  • the operator removes the wafer (100) to exchange it for the TEM grid (200) holder. Separation of the cut sample (140) from the wafer (100) is preferably assisted by slightly lowering the wafer (100); typically by lowering the stage in the FIB instrument.
  • the TEM grid (200) is a standard grid, such as an uncoated 100 or 200 square mesh Cu grid. For the purposes of the method disclosed, the TEM grid (200) is cut across so that the cut bars form "V's" open above (in the z-axis) (see Figure 5).
  • the TEM grid (200) is mounted in the FIB with the cut side up, or with its plane parallel to the z-axis.
  • the eucentric position should be set on the cut edge of the TEM grid (200).
  • the operator then moves the probe (120) with the sample (140) attached as shown in Figure 5.
  • the probe (120) is moved until both ends of the sample (140) contact the bars of the TEM grid (200) as shown in Figure 5 and the following figures.
  • the operator welds a free edge of the sample (140) to a first bar (220) of the TEM grid (200) forming a first weld (210).
  • FIG. 6 shows the probe (120) detached from the sample weld (130) by use of the ion beam (160).
  • the probe (120) may now be retracted.
  • the operator then uses FIB metal deposition to weld the newly freed edge of sample (140) to a second bar (230) of the TEM grid (200), forming a second weld (240), as shown in Figures 7 and 8.
  • the sample can now be thinned by the FIB to a thickness suitable for the TEM application.
  • the method may be used generally to remove a portion of a wafer (considered generally).
  • the probe is attached as described above to the sample of the wafer desired to be removed. Then, the ion beam is positioned to make a single cut that releases the sample. The sample is held attached to the probe, which may be moved away from the wafer and inspected or simply disposed of, if the object is to shape the remaining portion of the wafer.
  • the method is applicable to such applications as micromachining or fabrication of atomic-force- microscope tips. Since those skilled in the art can modify the specific embodiments described above, we intend that the claims be interpreted to cover such modifications and equivalents.

Abstract

When a desired portion (110) is separated from an integrated circuit chip or a semiconductor wafer (100), the portion is separated so that the resulting sample can be moved to a location for examination by TEM, SEM or other means. A sample portion of the chip or wafer containing an area of interest is separated with a single cut by a focused ion-beam (160). Prior to separation, the sample is fixed to a micromanipulator probe (120). The sample is moved by the probe to the location for examination and fixed there. The probe is then detached form the sample by the focused ion-beam.

Description

METHOD FOR SAMPLE SEPARATION AND LIFT-OUT
TECHNICAL FIELD OF THE INVENTION The invention relates to methods for separating and manipulating microscopic samples from objects within electron-beam or ion-beam instruments.
BACKGROUND OF THE INVENTION The present invention relates to a method for separating a sample and a method for preparing the separated sample for analysis, in cases where analysis is desired; and particularly relates to a method for separating a minute sample region from a substrate such as a semiconductor wafer. This application describes embodiments in which a sample is cut out of a semiconductor wafer or other object by use of a focused ion beam ("FIB") and analyzed, if desired, through a transmission electron microscope ("TEM"), or by other means. In a conventional method for TEM sample preparation, a chip, or ribbon, having a length of several mm and a width of 100-500 μm is cut out from a semiconductor integrated circuit wafer by use of a diamond wafering saw. The chip is mounted on a standard TEM grid. Then the chip is formed into a thin sample (typically 50 μm) by the FIB. The thin film sample is irradiated with an electron beam and observed by use of the TEM. In conventional TEM observations a sample is thinned by polishing, while being observed. With this method, it is difficult to set the place of observation and direction of the sample desirably and precisely. It is necessary to carry out a step in which a region having a length of several mm and a width of 100-500 μm, and including a portion to be analyzed, is mechanically separated from the chip of an integrated circuit or semiconductor wafer. When a wafer is a sample substrate, it is necessary to divide the wafer for observation. It is difficult to process a sample to have a thickness less than 100 μm through mechanical processing by means of a diamond wafering saw or the like, because it is difficult to maintain accuracy and avoid damage. Portions which could not be cut to be thin enough through mechanical processing, would then have to be thinned with the FIB, which adds to processing time. In another conventional method, the sample is cleaved first. The plane of cleavage is then observed by a scanning-electron microscope. This method however, makes it difficult to specify a desired portion precisely, and makes it difficult to observe the section cleaved. All of the foregoing conventional techniques have disadvantages because it is difficult to make a section even substantially flat and parallel to the sample surface for observation, and it is impossible to observe, for example, a horizontal section of a contact hole. Another conventional method uses the FIB to cut a sample from a wafer by cutting the sample from at least two different angles after a probe has been attached to the sample. The probe then removes the sample for analysis. This method has the disadvantage that the wafer must be moved to a second angle for the second cut to be effected. These techniques typically rely on a break in electrical conductivity or trial and error to tell when the sample is isolated. There is a need for a method of sample separation which can produce precise samples, but which does not need multiple cuts. There is a particular need for a sample- separation method which will allow the operator to see the operation in process and to clearly see when the sample separates, without the need for electrical contact tests, or the like. SUMMARY OF THE INVENTION The invention is a method for sample separation and lift-out within a FIB instrument. The preferred embodiment comprises the steps of, first, cleaving a wafer, having an area of interest, or target, to be removed, so as to place the target near the edge of the cleaved wafer. Then, the tip of a micromanipulator probe is fixed to the wafer by ion-beam metal deposition. The FIB ion-beam is positioned at an angle of approximately 50 degrees to the plane of the wafer, and the ion beam cuts a U-shaped path on the surface of the wafer, so that the path surrounds the target and the fixed probe, and completely released the sample from the wafer. Next, the stage of the FIB is lowered slightly, so that the wafer is lowered beneath the released sample, now attached to the probe. The probe with the sample fixed to it is moved to a TEM grid. The TEM grid is preferably cut across its plane so as to provide a V-shape open above. The opening allows easy access to the V-shape for placement of the sample and further operations with the ion beam. The sample is then fixed to the TEM grid by ion-beam metal deposition, and the probe is then cut by the ion-beam and detached from the fixed sample. The sample may now be thinned by the ion beam for TEM inspection, or inspected by other means. The reader should note that with the method just described, only one ion-beam cut at one angle is necessary to release the sample from the wafer and allow it to be lifted out.
BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a typical wafer with an area of interest shown. The wafer is cut to create an edge near the area of interest. Figure 2 shows the attachment of a probe to the wafer. Figure 3 shows the FIB cutting out a sample bearing the area of interest, or target. Figure 4 shows removal of the sample from the wafer. Figures 5, 6, 7, and 8 show the attachment of the sample to a TEM grid, and detachment of the probe. 1
2 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
3 Figure 1 shows a semiconductor wafer (100) which has been cleaved or sawed so
4 the area of interest or "target" (110) for lift-out is located as close as possible to newly
5 formed edge (115). "Cleaving" may be done by sawing The further from the edge, the
6 longer (in y direction) and the deeper (in z direction), is the cut required to remove the
7 sample. A longer and deeper cut will significantly add time to the operation. The
8 operator inserts the wafer in FIB. In this application, we describe the object under
9 examination as a "wafer." The "wafer" (100) need not be a semiconductor device. It
10 may, for example be a micromechanical device, or any substance whatever requiring
11 TEM or SEM analysis, such as particles, granules, biological materials, or thin films.
12 The FIB may be either a single-beam model, or a dual-beam model. Typical FIB
13 instruments are those manufactured by FEI Company of Hillsboro, Oregon, as models
14 200, 820, 830, or 835.
15 After the cleaved wafer (100) is placed in the FIB instrument, the eucentric
16 position of the ion beam (160) should be set on the target (110). The sample should rest
17 at an angle α depicted in Figure 3 to the ion beam (160). The angle α can be any angle
18 less than ninety degrees to the plane of the wafer (100), although an angle of 45-60
19 degrees is preferable. Typically, the wafer (100) will be perpendicular to the electron 0 beam, if the FIB has an electron beam in addition to the ion beam (160). 1 Figure 2 shows a probe (120) that has made contact with the wafer (100) near 2 the target (110). The probe (120) is a component of a conventional micro-manipulator 3 tool which is attached to the FIB instrument with vacuum feed-through. A typical such 4 micro-manipulator tool is the Model 100 by Omniprobe, Inc. of Dallas, Texas. The 5 probe (120) is moved until its tip makes physical contact with the wafer (100), as shown 6 in Figure 2. The operator then preferably uses ion-beam metal deposition to form a weld 7 (130) that fixes the tip of the probe (120) to the wafer (100). Other methods may be 8 used to fix the probe (120) to the wafer (100), such as electrostatic attraction or 9 adhesives.
30 Next, the operator uses the layout functions of the FIB instrument to specify a
31 pattern on the wafer (100) surrounding the target (110), and preferably extending to the
32 edge (115) of the wafer (100) in the y-direction, as shown in Figure 3. The pattern is preferably U-shaped around the target (110), although a rectangular area, or an arbitrary shape enclosing the target (110) could also be used. This area defines the sample area to be milled by the ion-beam (160). The milling cut (150) should be as thick as necessary to prevent redeposited material from filling the cut. This will depend on the properties of the wafer (100). The specified pattern is milled to completely cut out the sample (140). Gas-assisted etching may also be used, if desired. This operation is illustrated in Figure 3. By viewing the image as the operation proceeds, it will be possible to see when the sample (140) is completely detached. After the sample (140) is completely cut from the wafer (100), the operator will increase the distance between the probe (120) (now holding the sample (140) and target (110)), and the remaining wafer (100), preferably by lowering the FIB stage height by at least 5-10 μm to drop the wafer (100). The operator withdraws the probe (120) holding the target (110) so the sample (140) will be clear of any obstacles when the wafer (100) is exchanged for the TEM grid (200). This operation is shown in Figure 4. Of course, the sample holder need not be a TEM grid (200) as shown, but may be another type of holder or device suitable for the intended inspection. When the probe (120) and the sample (140) are completely clear of any potential obstruction, the operator removes the wafer (100) to exchange it for the TEM grid (200) holder. Separation of the cut sample (140) from the wafer (100) is preferably assisted by slightly lowering the wafer (100); typically by lowering the stage in the FIB instrument. The TEM grid (200) is a standard grid, such as an uncoated 100 or 200 square mesh Cu grid. For the purposes of the method disclosed, the TEM grid (200) is cut across so that the cut bars form "V's" open above (in the z-axis) (see Figure 5). Using the probe (120) the TEM grid (200) is mounted in the FIB with the cut side up, or with its plane parallel to the z-axis. When the TEM grid (200) is inserted into the FIB, the eucentric position should be set on the cut edge of the TEM grid (200). The operator then moves the probe (120) with the sample (140) attached as shown in Figure 5. The probe (120) is moved until both ends of the sample (140) contact the bars of the TEM grid (200) as shown in Figure 5 and the following figures. Using FIB metal deposition, the operator welds a free edge of the sample (140) to a first bar (220) of the TEM grid (200) forming a first weld (210). The operator should choose an edge which will allow the ion beam (160) to contact the location of the first weld (210) without interference of the probe (120). Figure 6 shows the probe (120) detached from the sample weld (130) by use of the ion beam (160). The probe (120) may now be retracted. The operator then uses FIB metal deposition to weld the newly freed edge of sample (140) to a second bar (230) of the TEM grid (200), forming a second weld (240), as shown in Figures 7 and 8. The sample can now be thinned by the FIB to a thickness suitable for the TEM application. In another embodiment of the invention, the method may be used generally to remove a portion of a wafer (considered generally). The probe is attached as described above to the sample of the wafer desired to be removed. Then, the ion beam is positioned to make a single cut that releases the sample. The sample is held attached to the probe, which may be moved away from the wafer and inspected or simply disposed of, if the object is to shape the remaining portion of the wafer. Thus the method is applicable to such applications as micromachining or fabrication of atomic-force- microscope tips. Since those skilled in the art can modify the specific embodiments described above, we intend that the claims be interpreted to cover such modifications and equivalents.
CLAIMS We claim:

Claims

1. A A method for sample separation and lift-out comprising the steps of: a. positioning a wafer, the wafer having a target, inside a FIB instrument, for inspection of the target; b. fixing the tip of a probe to the wafer; c. Positioning an ion beam at an angle less than 90 degrees to plane of the wafer; d. cutting with the ion beam a sample of the wafer enclosing the target and the fixed probe, so that the sample is completely released from the wafer; e. moving the probe with the sample fixed to it to a holder for inspection; f. fixing the sample to the holder; and, detaching the probe from the sample.
2. The method for sample separation and lift-out of Claim 1, where the wafer is first cleaved so as to place the target near the edge of the cleaved wafer.
3. The method for sample separation and lift-out of Claim 1, where the probe tip is fixed to the wafer with ion-beam metal deposition.
4. The method for sample separation and lift-out of Claim 1, where the probe tip is fixed to the wafer by electrostatic attraction.
5. The method for sample separation and lift-out of Claim 1, where the probe tip is fixed to the wafer with adhesive.
6. The method for sample separation and lift-out of Claim 1, where the angle of the ion beam with respect to the plane of the wafer is approximately 50 degrees.
7. The method for sample separation and lift-out of Claim 1, where the cutting of the ion beam follows a rectangular path on the surface of the wafer; the path surrounding the target and the fixed probe.
8. The method for sample separation and lift-out of Claim 1, where the cutting of the ion beam follows a U-shaped path on the surface of the wafer; the path surrounding the target and the fixed probe.
9. The method for sample separation and lift-out of Claim 1 where the release of the sample from the wafer is assisted by first lowering the wafer.
10. The method for sample separation and lift-out of Claim 1, where the holder is a TEM grid.
11. The method for sample separation and lift-out of Claim 1 where the probe is fixed to the holder by ion-beam metal deposition.
12. The method for sample separation and lift-out of Claim 1, where the probe is detached from the sample by cutting with the ion beam.
13. The method for sample separation and lift-out of Claim 1, where the wafer is a semiconductor device.
14. The method for sample separation and lift-out of Claim 1, where the wafer is a micromechanical device.
15. The method for sample separation and lift-out of Claim 1 where the effects of the ion beam are assisted by gas-assisted etching.
16. A method for sample separation and lift-out comprising the steps of: a. cleaving a wafer, the wafer having a target, so as to place the target near the edge of the cleaved wafer; b. fixing the tip of a probe to the wafer by ion-beam metal deposition; c. positioning an ion-beam at an angle of approximately 50 degrees to the plane of the wafer; d. cutting with the ion-beam a U-shaped path on the surface of the wafer, the path surrounding the target and the fixed probe, so that the sample is completely released from the wafer; e. lowering the wafer slightly; f. moving the probe with the sample fixed to it to a TEM grid; the
TEM grid having a cut across it to provide a V-shape open above; g- fixing the sample to the TEM grid by ion-beam metal deposition; and, h. detaching the probe from the sample by cutting with the ion beam.
PCT/US2001/016644 2000-05-22 2001-05-23 Method for sample separation and lift-out WO2002095378A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/US2001/016644 WO2002095378A1 (en) 2000-05-22 2001-05-23 Method for sample separation and lift-out
EP01945982.5A EP1436601B1 (en) 2001-05-23 2001-05-23 Method for sample separation and lift-out
US09/863,571 US6420722B2 (en) 2000-05-22 2001-05-23 Method for sample separation and lift-out with one cut

Applications Claiming Priority (3)

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US20618800P 2000-05-22 2000-05-22
PCT/US2001/016644 WO2002095378A1 (en) 2000-05-22 2001-05-23 Method for sample separation and lift-out
US09/863,571 US6420722B2 (en) 2000-05-22 2001-05-23 Method for sample separation and lift-out with one cut

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10344643B4 (en) * 2003-09-17 2006-03-02 Carl Zeiss Nts Gmbh Specimen preparation method for preparing a specimen for electron microscope examinations places a specimen with a substrate in a vacuum chamber to apply a coating and ion beam
US7375325B2 (en) 2003-09-17 2008-05-20 Carl Zeiss Nts Gmbh Method for preparing a sample for electron microscopic examinations, and sample supports and transport holders used therefor
CN101644641B (en) * 2003-11-11 2012-07-04 全域探测器公司 Method and apparatus for rapid sample preparation in a focused ion beam microscope
CN111141811A (en) * 2019-12-26 2020-05-12 中国科学院地质与地球物理研究所 Target holder assembly of ion probe and method for preparing sample target of ion probe

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5914613A (en) 1996-08-08 1999-06-22 Cascade Microtech, Inc. Membrane probing system with local contact scrub
US6256882B1 (en) 1998-07-14 2001-07-10 Cascade Microtech, Inc. Membrane probing system
US6965226B2 (en) 2000-09-05 2005-11-15 Cascade Microtech, Inc. Chuck for holding a device under test
US6914423B2 (en) 2000-09-05 2005-07-05 Cascade Microtech, Inc. Probe station
JP4178741B2 (en) * 2000-11-02 2008-11-12 株式会社日立製作所 Charged particle beam apparatus and sample preparation apparatus
DE10143173A1 (en) 2000-12-04 2002-06-06 Cascade Microtech Inc Wafer probe has contact finger array with impedance matching network suitable for wide band
TW494449B (en) * 2001-02-06 2002-07-11 United Microelectronics Corp Method for fabricating test piece of transmission electron microscope
US6570170B2 (en) * 2001-03-01 2003-05-27 Omniprobe, Inc. Total release method for sample extraction from a charged-particle instrument
WO2003052435A1 (en) 2001-08-21 2003-06-26 Cascade Microtech, Inc. Membrane probing system
JP3820964B2 (en) * 2001-11-13 2006-09-13 株式会社日立製作所 Sample observation apparatus and method using electron beam
JP2003156418A (en) * 2001-11-26 2003-05-30 Mitsubishi Electric Corp Method of preparing analytical sample, analytical method, and analytical sample therefor
US6891170B1 (en) * 2002-06-17 2005-05-10 Zyvex Corporation Modular manipulation system for manipulating a sample under study with a microscope
JP2004227842A (en) * 2003-01-21 2004-08-12 Canon Inc Probe holding device, sample acquiring device, sample working device, sample working method, and sample evaluation method
US6995380B2 (en) * 2003-03-13 2006-02-07 Ascend Instruments, Llc End effector for supporting a microsample
JP2004354371A (en) * 2003-05-06 2004-12-16 Sii Nanotechnology Inc Micro sample taking-out device and method
US7057404B2 (en) 2003-05-23 2006-06-06 Sharp Laboratories Of America, Inc. Shielded probe for testing a device under test
US7492172B2 (en) 2003-05-23 2009-02-17 Cascade Microtech, Inc. Chuck for holding a device under test
EP1515360B1 (en) * 2003-06-13 2011-01-19 Fei Company Method and apparatus for manipulating a microscopic sample
NL1023657C2 (en) * 2003-06-13 2004-12-14 Fei Co Microscopic sample manipulation method in semiconductor industry, involves applying separation using laser between manipulator and sample carrier, so that portion of carrier protruding from carrier, remains attached to sample
JP2007506981A (en) * 2003-09-23 2007-03-22 ザイベックス コーポレーション Method, system, and apparatus for microscopy using an element that grips a sample prepared with FIB
US7250626B2 (en) 2003-10-22 2007-07-31 Cascade Microtech, Inc. Probe testing structure
US7187188B2 (en) 2003-12-24 2007-03-06 Cascade Microtech, Inc. Chuck with integrated wafer support
GB2425844B (en) 2003-12-24 2007-07-11 Cascade Microtech Inc Active wafer probe
TW200531420A (en) 2004-02-20 2005-09-16 Zyvex Corp Positioning device for microscopic motion
US7319336B2 (en) * 2004-02-23 2008-01-15 Zyvex Instruments, Llc Charged particle beam device probe operation
US7326293B2 (en) * 2004-03-26 2008-02-05 Zyvex Labs, Llc Patterned atomic layer epitaxy
US7009188B2 (en) * 2004-05-04 2006-03-07 Micron Technology, Inc. Lift-out probe having an extension tip, methods of making and using, and analytical instruments employing same
US20060017016A1 (en) * 2004-07-01 2006-01-26 Fei Company Method for the removal of a microscopic sample from a substrate
EP1612837B1 (en) * 2004-07-01 2006-12-20 FEI Company Method for the removal of a microscopic sample from a substrate
US7408178B2 (en) * 2004-07-01 2008-08-05 Fei Company Method for the removal of a microscopic sample from a substrate
US8723144B2 (en) * 2004-07-14 2014-05-13 Applied Materials Israel, Ltd. Apparatus for sample formation and microanalysis in a vacuum chamber
US7420381B2 (en) 2004-09-13 2008-09-02 Cascade Microtech, Inc. Double sided probing structures
US7208965B2 (en) * 2004-12-23 2007-04-24 Systems On Silicon Manufacturing Co. Pte. Ltd. Planar view TEM sample preparation from circuit layer structures
US7656172B2 (en) 2005-01-31 2010-02-02 Cascade Microtech, Inc. System for testing semiconductors
US7535247B2 (en) 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors
US7442924B2 (en) * 2005-02-23 2008-10-28 Fei, Company Repetitive circumferential milling for sample preparation
JP2007164992A (en) * 2005-12-09 2007-06-28 Sii Nanotechnology Inc Compound charged particle beam device
US7764072B2 (en) 2006-06-12 2010-07-27 Cascade Microtech, Inc. Differential signal probing system
US7403028B2 (en) 2006-06-12 2008-07-22 Cascade Microtech, Inc. Test structure and probe for differential signals
US7723999B2 (en) 2006-06-12 2010-05-25 Cascade Microtech, Inc. Calibration structures for differential signal probing
US7423263B2 (en) * 2006-06-23 2008-09-09 Fei Company Planar view sample preparation
US20080078506A1 (en) * 2006-09-29 2008-04-03 Zyvex Corporation RF Coil Plasma Generation
US20080078745A1 (en) * 2006-09-29 2008-04-03 Zyvex Corporation RF Coil Plasma Generation
JP5270558B2 (en) 2006-10-20 2013-08-21 エフ・イ−・アイ・カンパニー Method and sample structure for creating S / TEM sample
EP2095134B1 (en) 2006-10-20 2017-02-22 FEI Company Method and apparatus for sample extraction and handling
DE102007026847A1 (en) * 2007-06-06 2008-12-11 Carl Zeiss Nts Gmbh Particle beam apparatus and method of use in a particle beam apparatus
EP2009422B1 (en) * 2007-06-29 2009-08-12 FEI Company Method for attaching a sample to a manipulator
US7876114B2 (en) 2007-08-08 2011-01-25 Cascade Microtech, Inc. Differential waveguide probe
JP2009115677A (en) * 2007-11-08 2009-05-28 Jeol Ltd Method and system for preparing sample
US7888957B2 (en) 2008-10-06 2011-02-15 Cascade Microtech, Inc. Probing apparatus with impedance optimized interface
US8410806B2 (en) 2008-11-21 2013-04-02 Cascade Microtech, Inc. Replaceable coupon for a probing apparatus
US8319503B2 (en) 2008-11-24 2012-11-27 Cascade Microtech, Inc. Test apparatus for measuring a characteristic of a device under test
DE102009001587A1 (en) * 2009-01-06 2010-07-08 Carl Zeiss Nts Gmbh Method for adjusting operating parameter of particle radiation device, involves providing sample holder with sample receptacle for receiving reference sample
WO2011129315A1 (en) * 2010-04-16 2011-10-20 株式会社日立ハイテクノロジーズ Ion beam apparatus and ion-beam processing method
US8258473B2 (en) * 2010-11-12 2012-09-04 Nanotem, Inc. Method and apparatus for rapid preparation of multiple specimens for transmission electron microscopy
US8604446B2 (en) 2011-08-08 2013-12-10 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon Devices and methods for cryo lift-out with in situ probe
US8759765B2 (en) 2011-08-08 2014-06-24 Omniprobe, Inc. Method for processing samples held by a nanomanipulator
US8740209B2 (en) * 2012-02-22 2014-06-03 Expresslo Llc Method and apparatus for ex-situ lift-out specimen preparation
CN103376217B (en) * 2012-04-23 2015-09-02 中芯国际集成电路制造(上海)有限公司 The pinpoint method for making of TEM sample
US8816278B1 (en) * 2013-09-05 2014-08-26 Globalfoundries Singapore Pte. Ltd. Imaging methods
US9281163B2 (en) * 2014-04-14 2016-03-08 Fei Company High capacity TEM grid
JP6552383B2 (en) * 2014-11-07 2019-07-31 エフ・イ−・アイ・カンパニー Automated TEM sample preparation
CN106783651B (en) * 2015-11-19 2020-04-17 无锡华润上华科技有限公司 Method for determining failure position of semiconductor device
US10801926B2 (en) 2017-07-17 2020-10-13 Expresslo Llc Probe with solid beveled tip and method for using same for specimen extraction
CN108181487B (en) * 2018-03-15 2020-03-06 上海交通大学 Ultrahigh vacuum sample cutting device
US11060981B2 (en) * 2018-03-20 2021-07-13 Applied Materials Israel Ltd. Guided inspection of a semiconductor wafer based on spatial density analysis
US10522324B1 (en) 2018-08-02 2019-12-31 Expresslo Llc Method of producing lift out specimens for teaching, practice, and training
US11573156B2 (en) * 2019-01-15 2023-02-07 Westinghouse Electric Company Llc Minimally invasive microsampler for intact removal of surface deposits and substrates
JP6885637B2 (en) * 2020-04-30 2021-06-16 株式会社日立ハイテクサイエンス Charged particle beam device
CN111679100A (en) * 2020-07-16 2020-09-18 上海华力微电子有限公司 Nano probe testing method
US11808679B2 (en) 2022-01-27 2023-11-07 Expresslo Llc Method and apparatus for cryogenic and environmental controlled specimen handling

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270552A (en) * 1991-08-22 1993-12-14 Hitachi, Ltd. Method for separating specimen and method for analyzing the specimen separated by the specimen separating method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2713923B2 (en) 1987-10-07 1998-02-16 株式会社日立製作所 Device processing method using focused ion beam
US5093572A (en) 1989-11-02 1992-03-03 Mitsubishi Denki Kabushiki Kaisha Scanning electron microscope for observation of cross section and method of observing cross section employing the same
EP0457998B1 (en) * 1990-05-25 1994-01-26 International Business Machines Corporation Method and apparatus for batch cleaving semiconductor wafers and for coating the cleaved facets
EP0927880A4 (en) 1997-07-22 2010-11-17 Hitachi Ltd Method and apparatus for preparing samples

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270552A (en) * 1991-08-22 1993-12-14 Hitachi, Ltd. Method for separating specimen and method for analyzing the specimen separated by the specimen separating method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1436601A4 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10344643B4 (en) * 2003-09-17 2006-03-02 Carl Zeiss Nts Gmbh Specimen preparation method for preparing a specimen for electron microscope examinations places a specimen with a substrate in a vacuum chamber to apply a coating and ion beam
US7375325B2 (en) 2003-09-17 2008-05-20 Carl Zeiss Nts Gmbh Method for preparing a sample for electron microscopic examinations, and sample supports and transport holders used therefor
DE10362116B4 (en) * 2003-09-17 2008-08-28 Carl Zeiss Nts Gmbh Method for preparing a sample for electron microscopic examinations, and gripper used thereby
CN101644641B (en) * 2003-11-11 2012-07-04 全域探测器公司 Method and apparatus for rapid sample preparation in a focused ion beam microscope
CN101644639B (en) * 2003-11-11 2012-07-04 全域探测器公司 Method and apparatus for rapid sample preparation in a focused ion beam microscope
CN111141811A (en) * 2019-12-26 2020-05-12 中国科学院地质与地球物理研究所 Target holder assembly of ion probe and method for preparing sample target of ion probe

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