WO2002103805A1 - A permanently-on transistor buried contact - Google Patents

A permanently-on transistor buried contact Download PDF

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Publication number
WO2002103805A1
WO2002103805A1 PCT/US2002/019075 US0219075W WO02103805A1 WO 2002103805 A1 WO2002103805 A1 WO 2002103805A1 US 0219075 W US0219075 W US 0219075W WO 02103805 A1 WO02103805 A1 WO 02103805A1
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Prior art keywords
region
conductivity type
insulating layer
silicon
gate insulating
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PCT/US2002/019075
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French (fr)
Inventor
John P. Baukus
Lap-Wai Chow
William M. Clark, Jr.
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Hrl Laboratories, Llc
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Publication of WO2002103805A1 publication Critical patent/WO2002103805A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H01L23/576—Protection from inspection, reverse engineering or tampering using active circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/922—Active solid-state devices, e.g. transistors, solid-state diodes with means to prevent inspection of or tampering with an integrated circuit, e.g. "smart card", anti-tamper

Definitions

  • a process for forming a permanently-ON transistor comprising the steps of: providing a substrate region of a first conductivity type; forming a buried region of a second conductivity type within the substrate region of the first conductivity type; forming a polysilicon gate region; and forming a source region of the second conductivity type and a drain region of the second conductivity type within the substrate region, said source region and drain region contacting said buried region of the second conductivity type, wherein said transistor is ON regardless of a voltage applied to said polysilicon gate region.

Abstract

A permanently-ON MOS transistor (21) comprises silicon source and drain regions (9) of a first conductivity type in a silicon well region (3) of a second conductivity type. A silicon contact region (15) of the first conductivity types is buried in the well region, said contact region contacting said source region and said drain region. A first gate insulating layer (2) is selectively placed over the silicon source and drain regions. A second gate insulating layer (7) is selectively placed over the first gate insulating layer and over the silicon contact region. A polysilicon gate region (8', 8') is placed over the second gate insulating layer.

Description

TITLE A PERMANENTLY-ON TRANSISTOR WITH BURIED CONTACT
BACKGROUND OF THE INVENTION
1. Field of the invention
The present invention relates to the prevention and /or inhibition of reverse engineering of digital integrated circuits, and more particularly to covertly turning a transistor permanently-ON with buried interconnects, to a permanently-ON transistor with buried contact, and to an integrated circuit structure comprising the same.
2. Description of the related art
The design, development and manufacturing efforts pertaining to semiconductor integrated circuits involve the understanding of complex structures, processes and manufacturing techniques involving smaller and smaller electronic circuitry. Efforts to be able to achieve such understanding and establish successful design, development and production manufacturing of such' integrated circuits involve many man-hours of highly skilled professionals and considerable expense.
On the other hand, to avoid costly man-hours and other significant expenses some developers resort to reverse engineering practices wherein existing devices are taken apart, probed and otherwise examined to determine the physical structures of the resultant integrated circuit under review for subsequent copying. This reverse engineering, which typically relies primarily on obtaining planar optical image of the circuit, in essence attempts to by-pass typical product development efforts and expenses by studying and copying a competitive product.
Various approaches have been developed in an attempt to thwart such reverse engineering efforts, particularly in the field of semiconductor integrated circuits.
For example, US Pat. No. 5,866,933 in the name of the same inventors of the present application teaches how transistors in a CMOS circuit can be connected by hidden lines between the transistors, via modifying the P+ and N+ source/ drain masks. These implanted interconnections are further used to make a 3-input AND and OR circuit look substantially the same.
Moreover, US Pat. No. 5,783,846 in the name of the same inventors of the present application teaches a further modification in the source /drain implant masks so that the implanted connecting lines between transistors have a gap inserted, the length of which is approximately the length of the feature size of the CMOS technology being used. If the gap is "filled" with one kind of implant (depending on the implanted connecting line being P or N) the line conducts. But, if the gap is filled with the other kind of implant the line does not conduct. These gaps are called "channel blocks". Thereby the reverse engineer must determine connectivity on the basis of resolving the n or p implant at the minimum feature size of the channel block. Moreover, transistor sizes and metal connection routings are modified, to eliminate keys by which the reverse engineer can find inputs, outputs, gate lines etc. as keys to the circuit functionality.
However, integrated circuits protected with the art taught and referenced above look different from standard integrated circuits produced with the same CMOS process. This gives the reverse engineer an indication that something in the circuit at hand is different.
SUMMARY OF THE INVENTION
Designing a circuit to appear as one function, but operate as another, is a good way to protect a circuit against reverse process engineering. The present invention applies to the following genre of CMOS fabrication processes.
The process according to the present invention employs at least one polysilicon layer. Moreover, the process according to the present invention makes use of a buried contact process.
The process according to the present invention provides selected transistors within the integrated circuit that are permanently-ON despite the fact that they will look to the reverse engineer as normally functioning transistors.
In this way, the present invention overcomes the problems of the prior art by making use of a buried contact technique to make permanently turned-ON transistors. In particular, as further disclosed in the present invention, a polysilicon layer can be deposited before source and drain implants. Further, this invention can also be utilized in a double polysilicon CMOS process. In the double polysilicon CMOS process, both polysilicon layers can be deposited before source and drain implants.
A buried contact is a known structure in integrated circuit fabrication technology, firstly developed in the late 70's with nMOS circuits. A buried contact provides a direct connection between polysilicon, normally the gate of a first MOS transistor, and the source/ drain region of a second MOS transistor. To create buried contacts, contact openings are masked and etched after gate oxide growth and before deposition and patterning of polysilicon. In this way the polysilicon over the source and /or drain regions can make direct contact to the source and /or drain regions by means of the buried contact openings. See for example S. M. Sze, VLSI Technology, McGraw-Hill, pages 461-478.
The present invention makes use of buried contacts to create permanently-ON transistors that look identical to normal transistors. As a result, circuits can be designed to appear as performing one function but in fact perform another. Neither the ON transistors nor the other transistors require that polysilicon be deposited after source and drain implantation, as required by the prior art.
This also means that the present invention, which can be used with the art referenced above, or by itself, does not change the overall appearance of the integrated circuit. That is because the turning of the transistor permanently-ON is accomplished in a covert manner. According to a first aspect of the present invention, a permanently-ON MOS transistor is provided, comprising: a silicon source region of a first conductivity type; a silicon drain region of the first conductivity type; a silicon well region of a second conductivity type, in which said source region and drain region are buried; a silicon contact region of the first conductivity type, buried in the well region, said contact region contacting said source region and said drain region; a first gate insulating layer selectively placed over the silicon source region and the silicon drain region; a second gate insulating layer selectively placed over the first gate insulating layer and over the silicon contact region; and a polysilicon gate region placed over the second gate insulating layer.
According to a second aspect of the present invention, an integrated circuit structure for MOS-type devices is provided, comprising at least one permanently-ON MOS transistor, said transistor including: a first silicon source region of a first conductivity type; a first silicon drain region of the first conductivity type; a first silicon well region of a second conductivity type, in which the first silicon source region and the first silicon drain region are buried; a silicon contact region of the first conductivity type, buried in the well region, the contact region contacting the silicon source region and the silicon drain region; a first gate insulating layer selectively placed over the silicon source region and the silicon drain region; a second gate insulating layer selectively placed over the first gate insulating layer and over the silicon contact region; and a first polysilicon gate region placed over the second gate insulating layer.
According to a third aspect of the present invention, a process is provided for forming a permanently-ON MOS transistor comprising the steps of: providing a silicon well region of a first conductivity type; depositing a first insulating layer over the silicon well region of the first conductivity type; removing a portion of said deposited first insulating layer; forming a buried silicon region of a second conductivity type within the silicon well region of the first conductivity type, under the removed portion of said deposited first insulating layer; depositing a second insulating layer over the first insulating layer and over the buried silicon region of the second conductivity type; forming a polysilicon gate region over the second insulating layer; and forming a source region of the second conductivity type and a drain region of the second conductivity type within the buried silicon well region, said source region and drain region contacting said buried silicon region of the second conductivity type.
According to a fourth aspect of the present invention, a transistor is provided, comprising: a source region of a first conductivity type; a drain region of the first conductivity type; a substrate region of a second conductivity type, in which said source region and drain region are buried; a contact region of the first conductivity type, buried in the substrate region, said contact region contacting said source region and said drain region; and a polysilicon gate region placed over the contact region, wherein said transistor is ON regardless of a voltage applied to said polysilicon gate region.
According to a fifth aspect of the present invention, an integrated circuit structure for devices comprising at least one permanently-ON transistor is provided, said transistor including: a first source region of a first conductivity type; a first drain region of the first conductivity type; a first substrate region of a second conductivity type, in which the first source region and the first drain region are buried; a contact region of the first conductivity type, buried in the substrate region, the contact region contacting the source region and the drain region; and a first polysilicon gate region placed over the contact region, wherein said transistor is ON regardless of a voltage applied to said polysilicon gate region.
According to a sixth aspect of the present invention, a process is provided for forming a permanently-ON transistor comprising the steps of: providing a substrate region of a first conductivity type; forming a buried region of a second conductivity type within the substrate region of the first conductivity type; forming a polysilicon gate region; and forming a source region of the second conductivity type and a drain region of the second conductivity type within the substrate region, said source region and drain region contacting said buried region of the second conductivity type, wherein said transistor is ON regardless of a voltage applied to said polysilicon gate region. BRIEF DESCRIPTION OF THE DRAWINGS
The present invention will be understood and appreciated more fully from the following detailed description taken in conjunction with the drawings, in which:
Figure 1 is a cross section of a circuit structure showing buried contacts in which the present invention can be realized;
Figure 2 is a top plan view of two MOS transistors, one of which is turned on according to the present invention; Figure 3 is a cross section taken along line A -A of figure 2;
Figure 4 is a top plan view of four MOS transistors in a CMOS configuration, two of which are turned on according to the present invention; Figure 5 is a cross section taken along line B-B of figure 4; and Figure 6 is a cross section taken along line C-C of figure 4.
DETAILED DESCRIPTION OF THE INVENTION
Reference will be now made to the drawings that are shown for the purpose of describing the preferred embodiment of the invention and not for limiting same.
In the following figures 1 to 3 the N-type buried contacts are shown, i.e. a P-well silicon region having N+ type buried contact implants and N+ type source/ drain active regions. Similarly, P-type buried connections will require P+ type source/drain connections and P+ type buried contact implants.
In a polysilicon CMOS process with buried contact, the buried contact is usually opened with masking and doped with the appropriate (i.e. N+ or P+ depending on the type of transistor) implant after the first gate oxide growth. A first layer of polysilicon is deposited to make connection to the source and drain area in the buried contact. The first layer of polysilicon can also be used to form the gate of the transistor with the first gate oxide.
In a double polysilicon CMOS process, e.g. an EEPROM circuit, the first layer of polysilicon is used as the floating gate for the memory and functions as the bottom plate of a capacitor formed between the first layer and a second layer of polysilicon. The second layer of polysilicon is therefore the upper plate of a capacitor and is used as the gate of the transistor over a gate oxide having a thickness which is the sum of the thicknesses of the first and of the second oxide.
Polysilicon has long been used to form the gates for MOS transistors (see for example S.M. Sze, Op. Cit., page 99) and this requires a CMOS process having one level of deposited polysilicon. CMOS processes employing two polysilicon layers, the two layers typically being separated by an oxide layer, make possible the formation of capacitors and electrically erasable programmable read only memories (EEPROM), see
Hodges and Jackson, Analysis and Design of Digital Integrated Circuits, 2nd edition, McGraw-Hill, 1998, page 353.
Figure 1 ' shows the cross section of the P-well portion of a CMOS integrated circuit implemented using a double polysilicon CMOS process, in which a buried contact structure is shown, both where contact is made (left side of Figure 1) and where contact is not made (right side of Figure 1). Field insulating regions of the CMOS integrated circuit, for example field oxide regions, are indicated by numeral 1, while first gate insulating regions, for example first gate oxide regions, are indicated by the numeral 2. Numeral 3 indicates a silicon well region of a first conductivity type, in this embodiment a P-well region. One skilled in the art will appreciate that numeral 3 may refer to a substrate of a first conductivity type. The field oxide shown here can be, for example, conventional LOCOS (LOCal Oxidation of Silicon) oxide. Buried regions 5, 15 of a second conductivity type, in this embodiment N+ regions, are implanted in the P well 3. The buri'ed region 5 is contacted by a first polysilicon layer 6. A second gate oxide 7, having a preferred thickness of about 100 A to 200 A, is disposed in part over the first polysilicon layer 6, in part over the first gate insulator 2 and in part over buried N+ regions like the buried N+ regions 15. In general, the first and the second layer gate oxide are not deposited over the LOCOS regions 1. However, embodiments in which this occurs could also be possible.
A second polysilicon layer 8 is placed over the N+ region 15, isolated therefrom by means of the second gate oxide 7. Finally, buried source/drain (S/D) regions 9 are present, formed, for example, through ion implantation. It should be noted that the first polysilicon layer 6 makes contact to the N+ region 5 and is connected to the source/ drain regions 9 through such region 5. On the contrary, the second polysilicon layer 8, though it also has buried contact opening and implant, is isolated from the N+ region 15 by means of the second gate oxide 7. Moreover, all the S/D regions 9 can be implanted after deposition of the polysilicon layers 6, 8.
Thus, the left part of Figure 1 shows a conventional buried contact (i.e. the N+ region 5 contacts the first polysilicon layer 6), while the right part of Figure 1 shows a buried contact 15 (separated from the second polysilicon layer 8 by a gate oxide 7) which can be used in order to realize a permanently-ON transistor as shown in the following figures. A permanently-ON transistor is one in which the transistor is ON regardless of a voltage applied to the gate region of the transistor.
In accordance with the preferred embodiment of the present invention, a permanently- ON transistor is implemented in a double polysilicon layer CMOS integrated circuit like the one described in Figure 1. As it will be appreciated by the person skilled in the art, the permanently-ON transistor can be implemented in NMOS and PMOS structures as well.
Figure 2 shows a top plan view of two transistors, wherein transistor 21 is a permanently-ON transistor realized according 'to the present invention and transistor 23 is a normal transistor. Transistor 21 has a polysilicon gate 8' and source /drain regions 9' , together with a buried contact opening 22. Transistor 23 has a polysilicon gate 8" and source/drain regions 9", with no buried contact openings. Of course, the buried contact opening 22 is shown for clarity purposes only and it is invisible when viewing the circuit from the top. Therefore, transistor 21 is identical to transistor 23 when viewed from the top.
Figure 3 is a cross section taken along line 3 - 3 of figure 2. With reference to the source/drain regions 9' of transistor 21, it should be noted that they are short-circuited by the implanted N+ region 15. The result of this is that transistor 21 is turned ON permanently. Because of the buried contact being located at the channel region, the etching process of the buried contact opening only created a step of the thickness of the second gate oxide 7, around 100 A to 200 A thick. This step is very difficult to identify during a reverse engineering process and makes the permanently-ON transistor 21 very difficult to detect and to distinguish from a non-permanently-ON transistor like transistor 23.
Figure 4 is a top plan view of four MOS transistors in a CMOS configuration, two of which are turned on according to the present invention. Transistors 41 and 42 are permanently-ON transistors realized according to the present invention and transistors 43 and 44 are normal transistors. Transistor 41 has a buried contact opening 45 and transistor 42 has a buried contact opening 46. Again, the buried contact openings are shown for clarity purposes only and are invisible when viewing the circuit from the top.
Figures 5 and 6 are cross sections taken along lines 5-5 and 6-6, respectively, of figure 4. The description of those figures is similar to the description of figure 3.
One skilled in the art will appreciate that while the embodiment as set forth above utilizes a double polysilicon process, a single polysilicon process may also be used to form a permanently-ON transistor. For example in Reference to Figure 3, only one layer of polysilicon 8' is used. Field oxide regions 1 are preferably formed first. Then, an optional gate oxide layer 2 maybe be deposited and etched. Next, buried region 15 is preferably formed. This may be followed by gate oxide layer 7. Next, a polysilicon layer 8' may be deposited. Finally, source/drain regions 9' and 9" may be formed. The result is a permanently-ON transistor with a buried contact formed utilizing a single polysilicon CMOS process. This permanently-ON transistor remains ON regardless of any voltage applied to the gate region.
The invention has been described with reference to a particular embodiment. Modifications and alterations will occur to others upon reading and understanding this specification. It is intended that all such modifications and alterations are included insofar as they come within the scope of the appended claims or equivalents thereof.

Claims

1.
A permanently-ON MOS transistor comprising: a silicon source region of a first conductivity type; a silicon drain region of the first conductivity type; a silicon well region of a second conductivity type, in which said source region and drain region are buried; a silicon contact region of the first conductivity type, buried in the well region, said contact region contacting said source region and said drain region; a first gate insulating layer selectively placed over the silicon source region and the silicon drain region; a second gate insulating layer selectively placed over the first gate insulating layer and over the silicon contact region; and a polysilicon gate region placed over the second gate insulating layer.
2.
The MOS transistor of claim 1, wherein said first conductivity type is a P conductivity type and said second conductivity type is a N conductivity type.
3.
The MOS transistor of claim 1, wherein said first conductivity type is a N conductivity type and said second conductivity type is a P conductivity type.
4.
The MOS transistor of any one of the preceding claims, wherein said first gate insulating layer is a first gate oxide layer and said second gate insulating layer is a second gate oxide layer.
5.
The MOS transistor of any one of the preceding claims, wherein said silicon contact region contacts the silicon well region.
6.
The MOS transistor of any one of the preceding claims, wherein said second gate insulating layer contacts said silicon contact region.
7. An EEPROM circuit comprising the permanently-ON MOS transistor of any one of the preceding claims.
8.
An integrated circuit structure for MOS-type devices comprising at least one permanently-ON MOS transistor, said transistor including: a first silicon source region of a first conductivity type; a first silicon drain region of the first conductivity type; a first silicon well region of a second conductivity type, in which the first silicon source region and the first silicon drain region are buried; a silicon contact region of the first conductivity type, buried in the well region, the contact region contacting the silicon source region and the silicon drain region; a first gate insulating layer selectively placed over the silicon source region and the silicon drain region; a second gate insulating layer selectively placed over the first gate insulating layer and over the silicon contact region; and a first polysilicon gate region placed over the second gate insulating layer.
9.
The circuit structure of claim 8, further comprising at least one non-permanently-ON MOS transistor, said at least one non-permanently-ON transistor including: a second silicon source region of the first conductivity type; a second silicon drain region of the first conductivity type: a second silicon well region of a second conductivity type, in which said second source region and said second drain region are buried, said second silicon well region being said first silicon well region; and a second polysilicon gate region, wherein: said first gate insulating layer is placed over said second silicon source region and over said second silicon drain region; said second gate insulating layer is placed over said first gate insulating layer; and said second polysilicon gate region is placed over said second gate insulating layer.
10. The integrated circuit structure of claim 8 or 9, wherein said first conductivity type is a P conductivity type and said second conductivity type is a N conductivity type.
11.
The integrated circuit structure of claim 8 or 9, wherein said first conductivity type is a N conductivity type and said second conductivity type is a P conductivity type.
12.
The integrated circuit structure of any one of claims 8 to 11, wherein said first gate insulating layer is a first gate oxide layer and said second gate insulating layer is a second gate oxide layer.
13.
The integrated circuit structure of any one of claims 8 to 12, wherein said silicon contact region contacts the first silicon well region. The integrated circuit structure of any one of claims 8 to 13, wherein said second gate insulating layer contacts said silicon contact region.
15.
An EEPROM circuit comprising the integrated circuit structure of any one of claims 8 to 14.
16. A process for forming a permanently-ON MOS transistor comprising the steps of: providing a silicon well region of a first conductivity type; depositing a first insulating layer over the silicon well region of the first conductivity type; removing a portion of said deposited first insulating layer; forming a buried silicon region of a second conductivity type within the silicon well region of the first conductivity type, under the removed portion of said deposited first insulating layer; depositing a second insulating layer over the first insulating layer and over the buried silicon region of the second conductivity type; forming a polysilicon gate region over the second insulating layer; and forming a source region of the second conductivity type and a drain region of the second conductivity type within the buried silicon well region, said source region and drain region contacting said buried silicon region of the second conductivity type.
17.
The process according to claim 16, wherein said step of forming a source region of the second conductivity type and a drain region of the second conductivity type within the buried silicon well region is the last step in time of the steps of claim 16.
18.
The process of claim 16 or 17, wherein said first conductivity type is a P conductivity type and said second conductivity type is a N conductivity type.
19.
The process of claim 16 or 17, wherein said first conductivity type is a N conductivity type and said second conductivity type is a P conductivity type.
20. The process of any one of claims 16 to 19, wherein said first gate insulating layer is a first gate oxide layer and said second gate insulating layer is a second gate oxide layer.
21.
The process of any one of claims 16 to 20, wherein said buried silicon region contacts the silicon well region.
22.
The process of any one of claims 16 to 21, wherein said second insulating layer contacts said buried silicon region.
23.
The process of any one of claims 16 to 22, wherein said permanently-ON transistor makes part of an EEPROM circuit.
24.
A transistor comprising: a source region of a first conductivity type; a drain region of the first conductivity type; a substrate region of a second conductivity type, in which said source region and drain region are buried; a contact region of the first conductivity type, buried in the substrate region, said contact region contacting said source region and said drain region; and a polysilicon gate region placed over the contact region, wherein said transistor is ON regardless of a voltage applied to said polysilicon gate region.
25.
The transistor of claim 24, further comprising: a first gate insulating layer selectively placed over the source region and the drain region; and a second gate insulating layer selectively placed over the first gate insulating layer and over the contact region.
26.
The transistor of claim 24, wherein said first conductivity type is a P conductivity type and said 'second conductivity type is a N conductivity type.
27.
The transistor of claim 24, wherein said first conductivity type is a N conductivity type and said second conductivity type is a P conductivity type.
28.
The transistor of any one of claim 25, wherein said first gate insulating layer is a first gate oxide layer and said second gate insulating layer is a second gate oxide layer.
29.
The transistor of claim 24, wherein said contact region contacts the substrate region.
30.
An EEPROM circuit comprising the transistor of any one of claims 24 to 29.
31.
An integrated circuit structure for devices comprising at least one transistor, said transistor including: a first source region of a first conductivity type; a first drain region of the first conductivity type; a first substrate region of a second conductivity type, in which the first source region and the first drain region are buried; a contact region of the first conductivity type, buried in the substrate region, the contact region contacting the source region and the drain region; and a first polysilicon gate region placed over the contact region, wherein said transistor is ON regardless of a voltage applied to said polysilicon gate region.
32.
The integrated circuit structure of claim 31, wherein said transistor further includes: a first gate insulating layer selectively placed over the source region and the drain region; and a second gate insulating layer selectively placed over the first gate insulating layer and over the contact region.
33.
The circuit structure of claim 31 or 32, further comprising at least one non-permanently- ON transistor, said at least one non-permanently-ON transistor including: a second source region of the first conductivity type; a second drain region of the first conductivity type: a second substrate region of a second conductivity type, in which said second source region and said second drain region are buried, said second substrate region being said first substrate region; and a second polysilicon gate region.
34.
The circuit structure of claim 33 when depending on claim 32, wherein: said first gate insulating layer is placed over said second source region and over said second drain region; said second gate insulating layer is placed over said first gate insulating layer; and said second polysilicon gate region is placed over said second gate insulating layer.
35.
The integrated circuit structure of claim 32 or 34, wherein said first gate insulating layer is a first gate oxide layer and said second gate insulating layer is a second gate oxide layer.
36.
The integrated circuit structure of any one of claims 31 to 35, wherein said contact region contacts the first substrate region.
37. The integrated circuit structure of any one of claims 32, 34 or 35, wherein said second gate insulating layer contacts said contact region.
38.
An EEPROM circuit comprising the integrated circuit structure of any one of claims 31 to 37.
39.
A process for forming a transistor comprising the steps of: providing a substrate region of a first conductivity type; forming a buried region of a second conductivity type within the substrate region of the first conductivity type; forming a polysilicon gate region over the buried region; and forming a source region of the second conductivity type and a drain region of the second conductivity type within the substrate region, said source region and drain region contacting said buried region of the second conductivity type, wherein said transistor is ON regardless of a voltage applied to said polysilicon gate region.
40.
The process of claim 39, further comprising the steps of: depositing a first insulating layer over the substrate region of the first conductivity type; removing a portion of said deposited first insulating layer before the step of forming a buried region; and depositing a second insulating layer over the first insulating layer and over the buried region of the second conductivity type, wherein the polysilicon gate region is formed over the second insulating layer.
41.
The process according to claim 39, wherein said step of forming a source region of the second conductivity type and a drain region of the second conductivity type within the substrate region is the last step in time of the steps of claim 39.
42.
The process of claim 40 or 41, wherein said first gate insulating layer is a first gate oxide layer and said second gate insulating layer is a second gate oxide layer.
43.
The process of any one of claims 39 to 42, wherein said buried region contacts the substrate region.
44.
The process of any one of claims 39 to 43, wherein said permanently-ON transistor makes part of an EEPROM circuit.
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