WO2003010831A1 - Semiconductor light emitting device comprising uneven substrate - Google Patents

Semiconductor light emitting device comprising uneven substrate Download PDF

Info

Publication number: WO2003010831A1
Authority: WO; WIPO (PCT)
Prior art keywords: light emitting; emitting device; semiconductor light; uneven substrate; substrate
Prior art date: 2001-07-24

Application number

PCT/JP2002/007460

Other languages

English (en)

French (fr)

Inventor

Isamu Niki

Motokazu Yamada

Masahiko Sano

Shuji Shioji

Original Assignee

Nichia Corporation

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-07-24

Filing date

2002-07-24

Publication date

2003-02-06

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27347215&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2003010831(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

2002-07-24 Application filed by Nichia Corporation filed Critical Nichia Corporation

2002-07-24 Priority to KR1020117028310A priority Critical patent/KR101211203B1/ko

2002-07-24 Priority to CNB028142691A priority patent/CN1315200C/zh

2002-07-24 Priority to EP10190784.8A priority patent/EP2293352B2/en

2002-07-24 Priority to EP19211858.6A priority patent/EP3654391A1/en

2002-07-24 Priority to KR1020047000976A priority patent/KR100952552B1/ko

2002-07-24 Priority to EP17158639.9A priority patent/EP3211677B1/en

2002-07-24 Priority to EP02751652A priority patent/EP1416543B1/en

2002-07-24 Priority to KR1020077017029A priority patent/KR101171135B1/ko

2003-02-06 Publication of WO2003010831A1 publication Critical patent/WO2003010831A1/ja

2005-01-25 Priority to HK05100642A priority patent/HK1067235A1/xx

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

PCT/JP2002/007460 2001-07-24 2002-07-24 Semiconductor light emitting device comprising uneven substrate WO2003010831A1 (en)

Priority Applications (9)

Application Number	Priority Date	Filing Date	Title
KR1020117028310A KR101211203B1 (ko)	2001-07-24	2002-07-24	요철형성 기판을 갖춘 반도체 발광 다이오드
CNB028142691A CN1315200C (zh)	2001-07-24	2002-07-24	具有形成凹凸的基板的半导体发光元件
EP10190784.8A EP2293352B2 (en)	2001-07-24	2002-07-24	Semiconductor light emitting device comprising uneven substrate
EP19211858.6A EP3654391A1 (en)	2001-07-24	2002-07-24	Semiconductor light emitting device comprising uneven substrate
KR1020047000976A KR100952552B1 (ko)	2001-07-24	2002-07-24	요철형성 기판을 갖춘 반도체 발광 다이오드 및 그 제조방법
EP17158639.9A EP3211677B1 (en)	2001-07-24	2002-07-24	Semiconductor light emitting device comprising uneven substrate
EP02751652A EP1416543B1 (en)	2001-07-24	2002-07-24	Semiconductor light emitting device comprising uneven substrate
KR1020077017029A KR101171135B1 (ko)	2001-07-24	2002-07-24	요철형성 기판을 갖춘 반도체 발광 다이오드
HK05100642A HK1067235A1 (en)	2001-07-24	2005-01-25	Semiconductor light emitting device comprising uneven substrate

Applications Claiming Priority (6)

Application Number	Priority Date	Filing Date	Title
JP2001-223114		2001-07-24
JP2001223114		2001-07-24
JP2002041737		2002-02-19
JP2002-041737		2002-02-19
JP2002213490A JP4055503B2 (ja)	2001-07-24	2002-07-23	半導体発光素子
JP2002-213490		2002-07-23

Publications (1)

Publication Number	Publication Date
WO2003010831A1 true WO2003010831A1 (en)	2003-02-06

Family

ID=27347215

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
PCT/JP2002/007460 WO2003010831A1 (en)	2001-07-24	2002-07-24	Semiconductor light emitting device comprising uneven substrate

Country Status (10)

Country	Link
US (15)	US6870191B2 (ja)
EP (8)	EP1416543B1 (ja)
JP (1)	JP4055503B2 (ja)
KR (4)	KR101171135B1 (ja)
CN (1)	CN1315200C (ja)
DK (1)	DK2256832T3 (ja)
HK (1)	HK1067235A1 (ja)
MY (1)	MY145322A (ja)
TW (1)	TW561632B (ja)
WO (1)	WO2003010831A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
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WO2005015648A1 (en) *	2003-08-12	2005-02-17	Epivalley Co., Ltd.	Method of forming grating on substrate and iii-nitride semiconductor light emitting device using the substrate
KR100819502B1 (ko)	2004-10-06	2008-04-04	주식회사 이츠웰	자립형 질화물계 반도체 기판 및 그 제조방법.
EP2020691A2 (en)	2007-07-31	2009-02-04	Epivalley Co., Ltd.	III-Nitride semiconductor light emitting device
US7635875B2 (en)	2001-07-24	2009-12-22	Nichia Corporation	Semiconductor light emitting device
JP2010177707A (ja) *	2003-10-21	2010-08-12	Samsung Electro-Mechanics Co Ltd	発光素子の製造方法
JP2011077562A (ja) *	2003-08-19	2011-04-14	Nichia Corp	半導体素子、発光素子及びその基板の製造方法
WO2012093601A1 (ja) *	2011-01-07	2012-07-12	三菱化学株式会社	エピタキシャル成長用基板およびＧａＮ系ＬＥＤデバイス
WO2012120891A1 (ja) *	2011-03-10	2012-09-13	国立大学法人山口大学	多波長発光素子及びその製造方法
WO2012148039A1 (en) *	2011-04-28	2012-11-01	Seoul Opto Device Co., Ltd.	Semiconductor substrate and method of fabricating the same
KR101321356B1 (ko)	2007-01-24	2013-10-22	엘지이노텍 주식회사	질화물 반도체 발광소자

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Publication number	Publication date
KR101032258B1 (ko)	2011-05-02
EP3654391A1 (en)	2020-05-20
KR101171135B1 (ko)	2012-08-06
EP2256832B1 (en)	2017-03-08
HK1067235A1 (en)	2005-04-01
US20100264446A1 (en)	2010-10-21
EP2259339B1 (en)	2018-05-02
EP2256832A1 (en)	2010-12-01
US20200176631A1 (en)	2020-06-04
EP1416543B1 (en)	2012-07-11
US20090042328A1 (en)	2009-02-12
US8344402B2 (en)	2013-01-01
EP2293352A1 (en)	2011-03-09
EP3211677B1 (en)	2019-12-04
US7804101B2 (en)	2010-09-28
US20080303043A1 (en)	2008-12-11
KR20070089750A (ko)	2007-08-31
DK2256832T3 (en)	2017-06-06
US9865773B2 (en)	2018-01-09
US7635875B2 (en)	2009-12-22
US20050001227A1 (en)	2005-01-06
US6870191B2 (en)	2005-03-22
US8299486B2 (en)	2012-10-30
KR101211203B1 (ko)	2012-12-11
KR20100018108A (ko)	2010-02-16
EP2256831B1 (en)	2014-01-22
EP2299504A1 (en)	2011-03-23
KR20040019352A (ko)	2004-03-05
MY145322A (en)	2012-01-31
EP2293352B2 (en)	2021-05-05
US9368681B2 (en)	2016-06-14
US20130183496A1 (en)	2013-07-18
EP2259339A1 (en)	2010-12-08
EP2256831A1 (en)	2010-12-01
US10593833B2 (en)	2020-03-17
KR20120000580A (ko)	2012-01-02
US20180158988A1 (en)	2018-06-07
TW561632B (en)	2003-11-11
US8148744B2 (en)	2012-04-03
US7745245B2 (en)	2010-06-29
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